CN201562674U - Device for growth of reflection reducing coating layer of mercury cadmium telluride part - Google Patents
Device for growth of reflection reducing coating layer of mercury cadmium telluride part Download PDFInfo
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- CN201562674U CN201562674U CN2009202224321U CN200920222432U CN201562674U CN 201562674 U CN201562674 U CN 201562674U CN 2009202224321 U CN2009202224321 U CN 2009202224321U CN 200920222432 U CN200920222432 U CN 200920222432U CN 201562674 U CN201562674 U CN 201562674U
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- growth
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- antireflective coating
- hgcdte
- coating layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a device for the growth of a reflection reducing coating layer of a mercury cadmium telluride part, which comprises a target and a sample support, wherein the target is installed on the bottom part of a reflection reducing coating layer growth cavity and is connected with a radio frequency power source through a matching box; and the sample support is installed on the top part of the reflection reducing coating layer growth cavity, the sample support is provided with a built-in sample disc having a sample groove, a pressed disc is arranged on the exterior of the sample groove, the middle of the pressed disc is provided with a hole, the shape and the size of the hole are consistent with the area of the mercury cadmium telluride part to be coated, and the hole on the pressed disc is just opposite to the target. The device is used for the growth of the reflection reducing coating layer of the mercury cadmium telluride part. Since the device is provided with the pressed disc, the read-out circuit which is required to be protected is free from growing the reflection reducing coating layer, so the electric communication of the part is ensured, additional damage of the detector part is prevented, and favorable damage-free growth is realized.
Description
Technical field
The utility model relates to semiconductive thin film deposition technique field, particularly relates to a kind of device that is used for the growth of HgCdTe device antireflective coating.
Background technology
Mercury cadmium telluride (HgCdTe) infrared focal plane detector is the photodiode two-dimensional array, is one of Infrared Detectors important development direction.General HgCdTe infrared focal plane array structure comprises following part: (1) is in order to the CdTeZn substrate of growth mercury cadmium telluride sensitive layer; (2) deposit anti-reflecting layer on the CdTeZn substrate back, in order to the transmissivity that improves infrared radiation to improve the quantum efficiency of detector; (3) by the mercury cadmium telluride sensitive for infrared radiation layer of growth by liquid phase epitaxy method on substrate; (4) from the mercury cadmium telluride array, read the silicon reading circuit of detectable signal; (5) guarantee the interconnect indium column that electricity is connected between mercury cadmium telluride diode and the silicon reading circuit.
Wherein the antireflection layer principle on the deposit substrate is that light is considered as a kind of ripple, because light wave is the same with mechanical wave, the character that also has interference, the anti-reflection film of on substrate, growing, if the thickness of film equals four/for the moment of transmission infrared radiation wavelength, the light that reflects back in the both sides of this tunic will interfere so, thereby cancels out each other.Because reverberation disappears mutually, thereby transmitted light is strengthened.Growth antireflection layer in the HgCdTe device back side can play enhancing HgCdTe device infrared radiation and absorb, and the enhance device signal improves the detector signal to noise ratio, promotes the effect of detectivity and quantum efficiency.
Mercury-cadmium tellurid detector and silicon reading circuit are by the indium pole interconnection, and such structure can be optimized, have fill factor, curve factor that is close to 100% and the advantage that has increased multichannel pio chip signal processing area separately to detector and reading circuit.Yet also there is certain defective in this technology, particularly aspect machinery and calorifics stability, because the thermal coefficient of expansion of mercury cadmium telluride is 4.9 * 10
-6K, the thermal coefficient of expansion of silicon materials are 2.6 * 10
-6K, have bigger thermal mismatching between these two kinds of different materials, and detector self normal working temperature is 77K, normal storage temperature is 300K, machine of every switch all will stand temperature difference temperature shock up to 220K, has a strong impact on the long-time stability and the reliability of detector.In order more effectively to solve thermal mismatch stress and integrity problem, usually adopt detector chip thinning back side and bottom filling technique in the world: the HgCdTe detector chip that will interconnect carries out the bottom gap filling with having certain elastically-deformable material, carry out substrate thinning then, reach stress relieve and reallocation, it is minimum that coefficient of thermal expansion mismatch phenomenon between detector chip, reading circuit and the pad is reduced to, thereby reach the purpose of alleviating shear stress and improving reliability.In addition, after removing tellurium zinc cadmium substrate, mercury cadmium telluride can be surveyed visible and infrared spectral radiant simultaneously, and device can be used for some special double-colored detection purposes like this.
For the ultra-thin HgCdTe device back side antireflection layer growth technique behind this attenuate, the rete of need growing at tens of microns the ultra-thin HgCdTe device back side, and the not grown rete of going up of the reading circuit pad around must avoiding again.Existing anti-reflection film deposition technique does not have the special protection special fixture of reading circuit pad all around, very easily ultra-thin HgCdTe device is produced impressed pressure, causes device failure.
The utility model content
The utility model provides a kind of can not produce the damage device to ultra-thin HgCdTe device in HgCdTe device antireflective coating growth course; in order to exist existing anti-reflection film deposition technique not have the special protection special fixture of reading circuit pad all around in the solution prior art; very easily ultra-thin HgCdTe device is produced impressed pressure, cause the device failure problem.
For solving the problems of the technologies described above, the utility model provides a kind of device that is used for the growth of HgCdTe device antireflective coating, and described device comprises:
Target is installed in the bottom of antireflective coating growth chamber, and is connected with radio-frequency power supply by matching box;
The sample holder, be installed in the top of antireflective coating growth chamber, described sample holder is provided with the embedded sample disc with sample cell, described sample cell outer setting has compressing tablet, be provided with porose in the middle of the described compressing tablet, the shape in hole, size need the regional consistent of plated film with HgCdTe device, and the hole on the described compressing tablet and described target align up and down.
Wherein, described sample cell is square, and two relative angles are provided with the load hole darker than described sample groove depth.
Wherein, described sample cell both sides are provided with through hole.
Wherein, described HgCdTe device is fixed on the sample disc by reed, screw and compressing tablet, and sample disc is installed in the sample holder.
Wherein, described antireflective coating growth chamber sidewall be provided with observation window.
The utility model beneficial effect is as follows:
By said apparatus HgCdTe device is carried out the antireflective coating growth; owing to be provided with compressing tablet, antireflective coating on the reading circuit that needs protection is not grown has guaranteed that the electricity of device is communicated with; and the detector device is not produced additional injury, reached good not damaged growth purpose.
Description of drawings
Fig. 1 is a kind of structural representation that is used for HgCdTe device antireflective coating grower of the utility model;
Fig. 2 is a kind of structural representation that the embedded sample disc of compressing tablet is installed of the utility model;
Fig. 3 is the structural representation of a kind of embedded sample disc of the utility model;
Fig. 4 is the cutaway view of a kind of compressing tablet of the utility model;
Fig. 5 is the front view of a kind of reed of the utility model.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, does not limit the utility model.
Shown in Fig. 1～5, the device that is used for the growth of HgCdTe device antireflective coating of present embodiment is taked magnetron sputtering apparatus, cooperates embedded as shown in Figure 2 sample disc and special fixture, carries out ultra-thin HgCdTe device anti-reflection layer growth.This device comprises embedded sample disc 2, compressing tablet 3, reed 4, screw 5, matching box 6, radio-frequency power supply 7, target 8, sample holder 9.Wherein, target 8 is installed in the bottom of antireflective coating growth chamber, and be connected with radio-frequency power supply 7 by matching box 6, sample holder 9 is installed in the top of antireflective coating growth chamber, sample 1 is by compressing tablet 3, reed 4 and screw 5 are installed on the sample disc 2, print dish 2 is installed in the sample holder 9, sample disc 2 is embedded, it is provided with sample cell 10, the length and width size of sample cell 10 is bigger than the HgCdTe device size after having interconnected, its depth ratio HgCdTe device is dark, and is equipped with the load hole 11 darker than groove depth on 10 two relative angles of sample cell, be equipped with in the sample cell both sides in addition can mounting screw through hole 12.Compressing tablet 3 centres are provided with porose, and the shape in hole, size need the regional consistent of plated film with HgCdTe device, and hole on the compressing tablet 3 and target 8 align up and down.Usually, compressing tablet 3 is middle stainless steel substrates that square hole is arranged, and thin thickness is pressed on the stainless steel substrates with reed 4, utilizes screw 5 fixing.In addition, also be provided with observation ward 13, be used to observe the coating process process in a side of antireflective coating growth chamber.
Below, we with ultra-thin medium wave 320 * 256 mercury cadmium telluride chips be sample as embodiment, this patent is further described in detail:
The first step, sample cleans: sample 1 usefulness organic solvent cleans the surface of needs plating antireflective coating.
In second step, sample is placed: utilize tweezers sample 1 to be placed in the sample cell 10 of interior pincers formula sample disc 2 by the load hole 11 on the sample disc, sample is answered in the whole sample cell 10 of packing into, and surface ratio sample disc 2 surfaces are low, and plating anti-reflection film surface rushes to.
In the 3rd step, anchor clamps are installed: compressing tablet 3 is aimed at sample 1, and blocks the zone of required protection fully, just in time exposes the zone that needs plated film.
In the 4th step, anchor clamps are fixed: adopt the mode of screw 5, reed 4, thoroughly fixing compressing tablet 3.The front swept away and was installed in the sample holder 9 sample disc 2 whole upsets this moment, taked sample 1 to carry out sample disc 2 in last pattern and sent sheet, and this moment, sample 1 whole dropping on the compressing tablet 3 only born the self gravitation effect.
In the 5th step, coating growth: radio-frequency power supply 6 powers up, and by matching box 7 power is added to target 8, feeds Ar gas, carries out the antireflective coating growth.
In the 6th step, take out sample: unclamp screw 5, and take reed 4 and compressing tablet 3 away, take out sample from interior pincers formula sample disc 2, whole antireflective coating growth course finishes.
After growth is finished, by observation by light microscope antireflective coating growing state.Determine through observation; pass through said method; the reading circuit that needs protection not growth is gone up antireflective coating; the electricity that has guaranteed device is communicated with; can see by surveying the contrast of Dewar test result in the device before and after the growth antireflective coating technology; signal has improved nearly 15%; obvious to improving detector detectivity effect; the uniformity of device and blind element rate also have suitably improvement simultaneously; explanation is carried out the antireflective coating growth by said apparatus and method; the detector device is not produced additional injury, reached good not damaged growth purpose.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (5)
1. one kind is used for the device that the HgCdTe device antireflective coating is grown, and it is characterized in that described device comprises:
Target is installed in the bottom of antireflective coating growth chamber, and is connected with radio-frequency power supply by matching box;
The sample holder, be installed in the top of antireflective coating growth chamber, described sample holder is provided with the embedded sample disc with sample cell, described sample cell outer setting has compressing tablet, be provided with porose in the middle of the described compressing tablet, the shape in hole, size need the regional consistent of plated film with HgCdTe device, and the hole on the described compressing tablet and described target align up and down.
2. the device that is used for the growth of HgCdTe device antireflective coating as claimed in claim 1 it is characterized in that described sample cell is square, and two relative angles is provided with the load hole darker than described sample groove depth.
3. the device that is used for the growth of HgCdTe device antireflective coating as claimed in claim 1 is characterized in that described sample cell both sides are provided with through hole.
4. the device that is used for the growth of HgCdTe device antireflective coating as claimed in claim 3 is characterized in that described HgCdTe device is fixed on the described sample disc by reed, screw and compressing tablet, and sample disc is installed in the described sample holder.
5. the device that is used for HgCdTe device antireflective coating growth as claimed in claim 1 is characterized in that, described antireflective coating growth chamber sidewall be provided with observation window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202224321U CN201562674U (en) | 2009-09-08 | 2009-09-08 | Device for growth of reflection reducing coating layer of mercury cadmium telluride part |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202224321U CN201562674U (en) | 2009-09-08 | 2009-09-08 | Device for growth of reflection reducing coating layer of mercury cadmium telluride part |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201562674U true CN201562674U (en) | 2010-08-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202224321U Expired - Lifetime CN201562674U (en) | 2009-09-08 | 2009-09-08 | Device for growth of reflection reducing coating layer of mercury cadmium telluride part |
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| CN (1) | CN201562674U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103572244A (en) * | 2012-07-19 | 2014-02-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film deposition apparatus and film deposition method |
| CN104711670A (en) * | 2015-04-02 | 2015-06-17 | 中国科学院上海微系统与信息技术研究所 | Sample support for molecular beam epitaxial growth and angle resolved photoelectron spectroscope testing |
| CN108962925A (en) * | 2018-06-08 | 2018-12-07 | 中国电子科技集团公司第十研究所 | A kind of backlight is according to blending together chip anti-reflection film growing method and device |
-
2009
- 2009-09-08 CN CN2009202224321U patent/CN201562674U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103572244A (en) * | 2012-07-19 | 2014-02-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film deposition apparatus and film deposition method |
| CN103572244B (en) * | 2012-07-19 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film deposition apparatus and membrane deposition method |
| CN104711670A (en) * | 2015-04-02 | 2015-06-17 | 中国科学院上海微系统与信息技术研究所 | Sample support for molecular beam epitaxial growth and angle resolved photoelectron spectroscope testing |
| CN108962925A (en) * | 2018-06-08 | 2018-12-07 | 中国电子科技集团公司第十研究所 | A kind of backlight is according to blending together chip anti-reflection film growing method and device |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100825 |
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| CX01 | Expiry of patent term |