CN201533388U - Electroacoustic element - Google Patents

Electroacoustic element Download PDF

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Publication number
CN201533388U
CN201533388U CN2009202273313U CN200920227331U CN201533388U CN 201533388 U CN201533388 U CN 201533388U CN 2009202273313 U CN2009202273313 U CN 2009202273313U CN 200920227331 U CN200920227331 U CN 200920227331U CN 201533388 U CN201533388 U CN 201533388U
Authority
CN
China
Prior art keywords
field effect
effect transistor
round platform
grid
electroacoustic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009202273313U
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Chinese (zh)
Inventor
潘难德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WEIFANG ANJING ELECTRONICS CO Ltd
Original Assignee
WEIFANG ANJING ELECTRONICS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WEIFANG ANJING ELECTRONICS CO Ltd filed Critical WEIFANG ANJING ELECTRONICS CO Ltd
Priority to CN2009202273313U priority Critical patent/CN201533388U/en
Application granted granted Critical
Publication of CN201533388U publication Critical patent/CN201533388U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to an electroacoustic element which comprises a casing, wherein the upper portion of the casing is provided with a sound-conducting hole, the lower portion thereof is provided with a first lead-wire pin and a second lead-wire pin, the inner portion of the casing is provided with a field-effect tube which is equipped with a polar plate, a spacing ring and a vibration film are arranged on the top of the polar plate, the field-effect tube comprises a field-effect tube body which is provided with an upper surface and a lower surface, a grid electrode of the field-effect tube is arranged on the upper surface of the field-effect tube body, a drain electrode and a source electrode are arranged on the lower surface of the field-effect tube body, and the polar plate is arranged on the grid electrode, thus the circuit boards, copper rings and insulating rings in traditional electroacoustic element structure are reduced, compared with the traditional electroacoustic elements, the electroacoustic element of the utility model is simpler in structure, the bearing end face of the grid electrode plays a role in supporting the polar plate, the drain electrode and the source electrode can protrude out of the electroacoustic element casing to be used as a lead-wire pin, thereby the drain electrode and the source electrode do not need to be welded with the lead-wire pins, and the installation technology is quite simpler.

Description

A kind of electroacoustic component
Technical field
The utility model relates to a kind of electronic devices and components, specifically, relates to a kind of electroacoustic component, belongs to electronic technology field.
Background technology
In the electroacoustic industry, the general electroacoustic component that uses is as transaudient device, present employed electroacoustic component, its structure is generally as shown in Figure 1, the shell 1 that comprises a metal, have the acoustic hole 8 and first terminal pin 3 and second terminal pin 4 on the shell 1, in shell 1, be provided with the field effect transistor 2 that voice signal is converted into current signal, field effect transistor 2 is installed on the circuit board 11, between acoustic hole 8 and field effect transistor 2, be provided with vibrating membrane 7 successively, cage ring 17 and pole plate 6, normally used field effect transistor 2 is just like Fig. 2 and structure as shown in Figure 3, field effect transistor 2 among Fig. 2 comprises a SMD square field effect transistor body 12, the grid 5 that on a side of field effect tube body 12, has parallel arranged, drain electrode 13 and source electrode 14, field effect transistor 2 among Fig. 3 comprises a SMD square field effect transistor body 12, on a side of square field effect transistor body 12, grid 5 is set, drain electrode 13 and source electrode 14 are set on another side corresponding with it, more than the field effect transistor 2 of two kinds of structures in being applied to miniature ultra-thin electroacoustic component the time, in order to reduce the thickness of electroacoustic component, field effect transistor body 12 need be attached on the circuit board 11, grid 5, drain electrode 13 and source electrode 14 are welded on the circuit board 11, copper ring 9 is set to connect grid 5 and pole plate 6 on circuit board 11, copper ring 9 plays the effect of support polar plate 6, for preventing shell 1 short circuit of copper ring 9 and metal, between copper ring 9 and shell 1, be provided with dead ring 10, drain electrode 13 also needs to be connected with second terminal pin 4 with first terminal pin 3 of electroacoustic component by circuit board 11 with source electrode 14, cause the structure more complicated of this electroacoustic component, mounting process is more loaded down with trivial details, production efficiency is low, because so the complex structure of electroacoustic component is difficult quality guarantee.
The utility model content
Problem to be solved in the utility model is at above deficiency, and a kind of electroacoustic component is provided, and this electroacoustic component is simple in structure, production efficiency is high, production cost is low.
For solving above technical problem, the technical scheme that the utility model adopted is: a kind of electroacoustic component, comprise shell, the top of shell has acoustic hole, the bottom has first terminal pin and second terminal pin, inside at shell has field effect transistor, field effect transistor is provided with pole plate, be provided with cage ring and vibrating membrane above the pole plate, it is characterized in that: described field effect transistor comprises the field effect transistor body, and the field effect transistor body has upper surface and lower surface, and the grid of field effect transistor is arranged on the upper surface of field effect transistor body, drain electrode and source electrode are arranged on the lower surface of field effect transistor body, and pole plate is arranged on the grid.
Reduced circuit board, copper ring and dead ring in the traditional electrical sound component structure, compared with traditional electroacoustic component, structure is simpler, and production technology is simpler, production cost is low.
The further optimization of last technical scheme, described grid have a carrying end face, and pole plate is arranged on the carrying end face of grid.
The carrying end face of grid plays the effect of support polar plate, can not need welding, installs more convenient.
A kind of concrete prioritization scheme is provided with conducting resinl between the carrying end face of described pole plate and grid.
Conducting resinl plays the effect of fixed polar plate on the one hand, makes the conductive effect between pole plate and the grid better on the other hand, and the quality of product is higher.
A kind of concrete prioritization scheme of grid, described grid are cylindric.
The another kind of concrete prioritization scheme of grid, described grid is arranged on the centre position of field effect transistor body upper surface.
This structure is more stable when making grid carrying pole plate.
A kind of concrete prioritization scheme of field effect transistor body, described field effect transistor body is discoid.Be convenient to the encapsulation of electroacoustic component circular housing.
The another kind of concrete prioritization scheme of field effect transistor body, described field effect transistor body comprises a disk and the round platform that is arranged on the upper and lower surface of disk.
The concrete optimal way of field effect transistor body, the round platform that described field effect transistor body upper surface is provided with is first round platform, and first round platform has the first round platform upper bottom surface, and the first round platform upper bottom surface forms the upper surface of field effect transistor body.
The another kind of concrete optimal way of field effect transistor body, the round platform that described field effect transistor body lower surface is provided with is second round platform, and second round platform has the second round platform upper bottom surface, and the second round platform upper bottom surface forms the lower surface of field effect transistor body.
The further optimization of last technical scheme, described disk is structure as a whole with the round platform that is arranged on the upper and lower surface of disk.
The field effect transistor body is arranged to a disk and on the upper and lower surface of disk round platform is set, and its bearing capacity is stronger.
The utility model is taked above technical scheme, compared with prior art has the following advantages:
1) electroacoustic component adopts above structure, has reduced circuit board, copper ring and dead ring in the traditional electrical sound component structure, compares with traditional electroacoustic component, and structure is simpler, and mounting process is simpler.
2) the field effect transistor body is arranged to discoid, is convenient to the encapsulation of electroacoustic component circular housing.
3) in the installation process of electroacoustic component, the carrying end face of grid plays the effect of support polar plate, can not need welding, and drain electrode and source electrode can stretch out the electroacoustic component shell becomes terminal pin, do not need to weld with terminal pin more separately, mounting process is simpler, production cost is low.
4) conducting resinl plays the effect of fixed polar plate, makes the conductive effect between pole plate and the grid better on the other hand, and product quality is higher.
5) the field effect transistor body is arranged to a disk and round platform is set on the upper and lower surface of disk, its bearing capacity is stronger.
The utility model is described in further detail below in conjunction with drawings and Examples.
Description of drawings
Accompanying drawing 1 is the structural representation of electroacoustic component in the prior art;
Accompanying drawing 2 is the structural representation of a kind of field effect transistor in the prior art;
Accompanying drawing 3 is the structural representation of another kind of field effect transistor in the prior art;
Accompanying drawing 4 is the structural representation of electroacoustic component among the utility model embodiment 1;
Accompanying drawing 5 is the structural representation of field effect transistor among the utility model embodiment 1;
Accompanying drawing 6 is the structural representation of electroacoustic component among the utility model embodiment 2;
Accompanying drawing 7 is the structural representation of field effect transistor among the utility model embodiment 2.
Among the figure,
The 1-shell, 2-field effect transistor, 3-first terminal pin, 4-second terminal pin, 5-grid, 6-pole plate, 7-vibrating membrane, the 8-acoustic hole, 9-copper ring, 10-dead ring, the 11-circuit board, 12-field effect transistor body, 13-drain electrode, the 14-source electrode, the 15-second round platform upper bottom surface, the 16-first round platform upper bottom surface, 17-cage ring.
Embodiment
Embodiment 1, and accompanying drawing 4 is the structural representation of electroacoustic component, and accompanying drawing 5 is the structural representation of field effect transistor.This electroacoustic component comprises the shell 1 of a metal, have the acoustic hole 8 and first terminal pin 3 and second terminal pin 4 on the shell 1, first terminal pin 3, second terminal pin 4 is connected with shell 1 insulation of metal, has field effect transistor 2 in the inside of shell 1, field effect transistor 2 comprises field effect transistor body 12, field effect transistor body 12 is discoid, field effect transistor body 12 has upper surface and lower surface, field effect transistor 2 is provided with pole plate 6, be provided with cage ring 17 and vibrating membrane 7 above the pole plate 6, the cylindric grid 5 of field effect transistor 2 is arranged on the centre position of field effect transistor body 12 upper surfaces, grid 5 has a carrying end face, pole plate 6 is arranged on the grid 5, the carrying end face of grid 5 is connected with pole plate 6 contacts, be provided with conducting resinl between the carrying end face of pole plate 6 and grid 5, drain electrode 13 and source electrode 14 are arranged on the lower surface of field effect transistor body 12, drain electrode 13 is connected with first terminal pin 3, source electrode 14 is connected with second terminal pin 4, during installation, the drain electrode 13 and the source electrode 14 of field effect transistor 2 are stretched out from the bottom of shell 1, drain electrode 13 just becomes first terminal pin 3 of electroacoustic component, and source electrode 14 just becomes second terminal pin 4 of electroacoustic component.
Embodiment 2, and accompanying drawing 6 is the structural representation of electroacoustic component, and accompanying drawing 7 is the structural representation of field effect transistor.This electroacoustic component comprises the shell 1 of a metal, have the acoustic hole 8 and first terminal pin 3 and second terminal pin 4 on the shell 1, first terminal pin 3, second terminal pin 4 is connected with shell 1 insulation of metal, has field effect transistor 2 in the inside of shell 1, field effect transistor 2 comprises field effect transistor body 12, field effect transistor 2 is provided with pole plate 6, be provided with cage ring 17 and vibrating membrane 7 above the pole plate 6, field effect transistor body 12 has upper surface and lower surface, field effect transistor body 12 comprises a disk and is arranged on the disk, the round platform of lower surface, the round platform that field effect transistor body 12 upper surfaces are provided with is first round platform, first round platform has the first round platform upper bottom surface 16, the first round platform upper bottom surface 16 forms the upper surface of field effect transistor body 12, the cylindric grid 5 of field effect transistor 2 is arranged on the centre position of field effect transistor body 12 upper surfaces, grid 5 has a carrying end face, pole plate 6 is arranged on the grid 5, the carrying end face of grid 5 is connected with pole plate 6 contacts, be provided with conducting resinl between the carrying end face of pole plate 6 and grid 5, the round platform that field effect transistor body 1 lower surface is provided with is second round platform, second round platform has the second round platform upper bottom surface 15, the second round platform upper bottom surface 15 forms the lower surface of field effect transistor body 12, drain electrode 13 and source electrode 14 are arranged on the lower surface of field effect transistor body 12, drain electrode 13 is connected with first terminal pin 3, source electrode 14 is connected with second terminal pin 4, disk be arranged on the disk, the round platform of lower surface is structure as a whole, during installation, the drain electrode 13 and the source electrode 14 of field effect transistor 2 are stretched out from the bottom of shell 1, drain electrode 13 just becomes first terminal pin 3 of electroacoustic component, and source electrode 14 just becomes second terminal pin 4 of electroacoustic component.

Claims (10)

1. electroacoustic component, comprise shell (1), the top of shell (1) has acoustic hole (8), the bottom has first terminal pin (3) and second terminal pin (4), has field effect transistor (2) in the inside of shell (1), field effect transistor (2) is provided with pole plate (6), be provided with cage ring (17) and vibrating membrane (7) above the pole plate (6), it is characterized in that: described field effect transistor (2) comprises field effect transistor body (12), field effect transistor body (12) has upper surface and lower surface, the grid (5) of field effect transistor (2) is arranged on the upper surface of field effect transistor body (12), drain electrode (13) and source electrode (14) are arranged on the lower surface of field effect transistor body (12), and pole plate (6) is arranged on the grid (5).
2. a kind of electroacoustic component as claimed in claim 1 is characterized in that: described grid (5) has a carrying end face, and pole plate (6) is arranged on the carrying end face of grid (5).
3. a kind of electroacoustic component as claimed in claim 2 is characterized in that: be provided with conducting resinl between the carrying end face of described pole plate (6) and grid (5).
4. a kind of electroacoustic component as claimed in claim 1 is characterized in that: described grid (5) is for cylindric.
5. a kind of electroacoustic component as claimed in claim 1 is characterized in that: described grid (5) is arranged on the centre position of field effect transistor body (12) upper surface.
6. as one of them described a kind of electroacoustic component of claim 1-5, it is characterized in that: described field effect transistor body (12) is for discoid.
7. as one of them described a kind of electroacoustic component of claim 1-5, it is characterized in that: described field effect transistor body (12) comprises a disk and the round platform that is arranged on the upper and lower surface of disk.
8. a kind of electroacoustic component as claimed in claim 7, it is characterized in that: the round platform that described field effect transistor body (12) upper surface is provided with is first round platform, first round platform has the first round platform upper bottom surface (16), and the first round platform upper bottom surface (16) forms the upper surface of field effect transistor body (12).
9. a kind of electroacoustic component as claimed in claim 7, it is characterized in that: the round platform that described field effect transistor body (1) lower surface is provided with is second round platform, second round platform has the second round platform upper bottom surface (15), and the second round platform upper bottom surface (15) forms the lower surface of field effect transistor body (12).
10. a kind of electroacoustic component as claimed in claim 7 is characterized in that: described disk is structure as a whole with the round platform that is arranged on the upper and lower surface of disk.
CN2009202273313U 2009-09-25 2009-09-25 Electroacoustic element Expired - Fee Related CN201533388U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009202273313U CN201533388U (en) 2009-09-25 2009-09-25 Electroacoustic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009202273313U CN201533388U (en) 2009-09-25 2009-09-25 Electroacoustic element

Publications (1)

Publication Number Publication Date
CN201533388U true CN201533388U (en) 2010-07-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009202273313U Expired - Fee Related CN201533388U (en) 2009-09-25 2009-09-25 Electroacoustic element

Country Status (1)

Country Link
CN (1) CN201533388U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103079157A (en) * 2012-12-28 2013-05-01 北京燕东微电子有限公司 Impedance transformation and signal amplifier of integrated vocal cavity and capacitance type microphone

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103079157A (en) * 2012-12-28 2013-05-01 北京燕东微电子有限公司 Impedance transformation and signal amplifier of integrated vocal cavity and capacitance type microphone
CN103079157B (en) * 2012-12-28 2015-07-15 北京燕东微电子有限公司 Impedance transformation and signal amplifier of integrated vocal cavity and capacitance type microphone

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100721

Termination date: 20150925

EXPY Termination of patent right or utility model