CN201532949U - Insulated gate double-pole transistor system - Google Patents
Insulated gate double-pole transistor system Download PDFInfo
- Publication number
- CN201532949U CN201532949U CN 200920169991 CN200920169991U CN201532949U CN 201532949 U CN201532949 U CN 201532949U CN 200920169991 CN200920169991 CN 200920169991 CN 200920169991 U CN200920169991 U CN 200920169991U CN 201532949 U CN201532949 U CN 201532949U
- Authority
- CN
- China
- Prior art keywords
- bus
- igbt
- insulated gate
- gate double
- pole transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The utility model discloses an insulated gate double-pole transistor system which comprises a bus bar device and a capacitance unit which are mutually and electrically connected, and the bus bar device concretely comprises an insulated gate double-pole transistor module and bus bars which are respectively connected with the insulated gate double-pole transistor module and the capacitance unit. The insulated gate double-pole transistor system utilizes bus bars with big area to reduce the distribution inductance of the bus bars, thereby reducing peak voltage and effectively protecting insulated gate double-pole transistor modules.
Description
Technical field
The utility model relates to a kind of igbt (Insulated Gate Bipolar Transistor is called for short IGBT) system, particularly relates to a kind of IGBT system that can reduce peak voltage.
Background technology
In existing high-power and super high power inverter, there are distributed inductance in the dc bus and the capacitor circuit that connect IGBT, the electric current of every IGBT when turning on and off is very big, the peak voltage that produces when therefore IGBT turns on and off is very high, if peak voltage can puncture IGBT when crossing greater than IGBT withstand voltage.Thereby the distributed inductance control peak voltage that therefore needs control inverter dc bus and capacitor circuit.
In order to control peak voltage, existing method is to take to absorb the method for peak voltage with electric capacity at the two ends of dc bus shunt capacitance.But can't fundamentally solve the excessive problem of peak voltage, be limited because electric capacity absorbs the ability of peak voltage, can not reduce peak voltage significantly.
The utility model content
The utility model provides a kind of IGBT system, in order to solve the excessive problem of peak voltage.
A kind of IGBT of the utility model system comprises: mutual bus device and the capacitor cell that is electrically connected; Described bus device specifically comprises: the IGBT module; Bus is connected with capacitor cell with described IGBT module respectively.
Described capacitor cell is a plurality of capacitors.
Described capacitor cell is electrically connected with described bus device by plug connector.
Described bus device bus specifically comprises: the negative pole bus is electrically connected with described capacitor cell; Positive electrode bus, joining with described IGBT module is connected, and is connected with described negative pole bus by first insulation board.
Described bus device also comprises second insulation board, and described positive electrode bus is joined with described IGBT module by described second insulation board and is connected.
Described bus device also comprises radiator, is connected with described IGBT module.
The utility model beneficial effect is as follows: a kind of IGBT of the present utility model system utilizes large-area bus to reduce the distributed inductance of bus, thereby reduces peak voltage, effectively protects the IGBT module.
Description of drawings
Fig. 1 is the structural representation of a kind of IGBT of the utility model system;
Fig. 2 is the structural representation of a kind of IGBT system median generatrix device 3.
Embodiment
In order to realize subtracting peak voltage, effectively protect IGBT, the utility model employing reduces the bus inductance and reduces peak voltage, cooperates simultaneously to absorb electric capacity.
As shown in Figure 1, be the structural representation of a kind of IGBT of the utility model system, described system comprises the bus device 3 and the capacitor cell 1 of mutual electrical connection; Described capacitor cell 1 is a plurality of capacitors.Described capacitor cell 1 is electrically connected with described bus device 3 by plug connector 2.The mode of a plurality of filtering capacitor grouping component units, every group of IGBT module cooperates a group capacitor unit, and every group capacitor unit has shortened copper bar length near the mode of this group IGBT module plug-in mounting, has reduced wiring inductance from another aspect.
As shown in Figure 2, be the structural representation of a kind of IGBT of the utility model system median generatrix device 3, described bus device 3 specifically comprises: IGBT module 31; And bus, be connected with capacitor unit 1 with described IGBT module 31 respectively.Described as shown in the figure bus device bus specifically comprises: negative pole bus 321 is electrically connected with described capacitor unit 1; Positive electrode bus 322, joining with described IGBT31 is connected, and is connected with described negative pole bus 321 by first insulation board 323.Described bus device 3 also comprises second insulation (being the IGBT insulation) plate 324, and described positive electrode bus 322 is joined with described IGBT31 by described second insulation board 324 and is connected.Described bus device 3 also comprises radiator 325, is connected with described IGBT31.Large tracts of land laminated bus and laminated bus are close to the mode that IGBT installs, and reduce the wiring inductance of bus.
The bus structure of the utility model design, the design feature of new bus is as follows: take large tracts of land laminated bus and laminated bus to be close to the mode that IGBT installs, reduce the wiring inductance of bus; Take the mode of filter capacitor grouping component units, every group of IGBT module cooperates a group capacitor unit, and every group capacitor unit has shortened copper bar length near the mode of this group IGBT module plug-in mounting, has reduced wiring inductance from another aspect.Above-mentioned two measures have farthest reduced the bus inductance, have effectively controlled peak voltage.Amplitude peak through the actual measurement peak voltage is controlled in below the 200V.The bus structure of innovation has effectively been controlled peak voltage, has reached Expected Results.
The laminated bus and the mounting means thereof of the utility model innovation have effectively reduced peak voltage, have saved absorption electric capacity, have improved the q﹠r of inverter.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (6)
1. an igbt system is characterized in that, described system comprises the bus device and the capacitor cell of mutual electrical connection; Described bus device specifically comprises:
Insulated gate bipolar transistor module; With
Bus is connected with capacitor cell with described insulated gate bipolar transistor module respectively.
2. igbt as claimed in claim 1 system is characterized in that described capacitor cell is a plurality of capacitors.
3. igbt as claimed in claim 1 system is characterized in that described capacitor cell is electrically connected with described bus device by plug connector.
4. igbt as claimed in claim 1 system is characterized in that described bus device bus specifically comprises:
The negative pole bus is electrically connected with described capacitor cell; With
Positive electrode bus, joining with described insulated gate bipolar transistor module is connected, and is connected with described negative pole bus by first insulation board.
5. igbt as claimed in claim 1 system is characterized in that described bus device also comprises second insulation board, and described positive electrode bus is joined with described igbt by described second insulation board and is connected.
6. igbt as claimed in claim 1 system is characterized in that described bus device also comprises radiator, is connected with described igbt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920169991 CN201532949U (en) | 2009-09-27 | 2009-09-27 | Insulated gate double-pole transistor system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920169991 CN201532949U (en) | 2009-09-27 | 2009-09-27 | Insulated gate double-pole transistor system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201532949U true CN201532949U (en) | 2010-07-21 |
Family
ID=42528350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200920169991 Expired - Lifetime CN201532949U (en) | 2009-09-27 | 2009-09-27 | Insulated gate double-pole transistor system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201532949U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103546015A (en) * | 2012-07-12 | 2014-01-29 | 株式会社丰田自动织机 | Inverter device |
| US10128625B2 (en) | 2014-11-18 | 2018-11-13 | General Electric Company | Bus bar and power electronic device with current shaping terminal connector and method of making a terminal connector |
-
2009
- 2009-09-27 CN CN 200920169991 patent/CN201532949U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103546015A (en) * | 2012-07-12 | 2014-01-29 | 株式会社丰田自动织机 | Inverter device |
| CN103546015B (en) * | 2012-07-12 | 2016-03-16 | 株式会社丰田自动织机 | DC-to-AC converter |
| US9385629B2 (en) | 2012-07-12 | 2016-07-05 | Kabushiki Kaisha Toyota Jidoshokki | Inverter device with upper and lower arm elements |
| US10128625B2 (en) | 2014-11-18 | 2018-11-13 | General Electric Company | Bus bar and power electronic device with current shaping terminal connector and method of making a terminal connector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Beijing DongBiao Electric Co., Ltd. Assignor: Beijing Dongbiao Electronic Co., Ltd. Contract record no.: 2011990000582 Denomination of utility model: Insulated gate double-pole transistor system Granted publication date: 20100721 License type: Exclusive License Record date: 20110711 |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100721 |