CN201495281U

CN201495281U - Ion sputtering device

Info

Publication number: CN201495281U
Application number: CN2009203071056U
Authority: CN
Inventors: 陈聪茂
Original assignee: Individual
Current assignee: Individual
Priority date: 2009-07-30
Filing date: 2009-07-30
Publication date: 2010-06-02
Anticipated expiration: 2019-07-30

Abstract

The utility model relates to the technical field of vacuum coating, in particular to an ion sputtering device, which comprises a cavity body, wherein one side of the inner part of the cavity body is fixedly provided with at least one fixed frame for arranging materials to be electroplated, and the other side thereof is provided with a heating device for heating and evaporating the original materials. The ion sputtering device is characterized in that: the materials to be electroplated are connected with the cathode of a closed DC electric source through the fixed frames, and the heating device is connected with the anode of the closed DC electric source. The ion sputtering device has the advantages of evaporating raw materials saving, fast evaporating speed, high coating adhesive force, good uniformity, easy control of coating depth, and high selectivity.

Description

The ion beam sputtering deposition device

Technical field

The utility model relates to technical field of vacuum plating, is specifically related to a kind of ion beam sputtering deposition device.

Background technology

General traditional vacuum plating system can be divided into vacuum thermal evaporation board system and vacuum sputtering plating board system.The problem that exists is that vacuum thermal evaporation board sticking power is poor, especially by plating person's surface irregularity or cleanliness factor when not enough, the thin film layer that plates is easy to come off, and vacuum sputtering plating board system speed is too slow, and it must be the requirement of planar object that plated body is arranged again.

Traditional vacuum thermal evaporation board system constructs as shown in Figure 1:

Be provided with one at a vacuum chamber and can heat evaporation starting material and make it to gasify evaporable well heater or crucible rapidly, the evaporation starting material are generally metal or other solid chemical compound.Above chamber internal heater or crucible, be provided with fixing in addition by the device of evaporation or object.When air and other gas of vacuum chamber is extracted, after vacuum tightness was reduced to a certain degree, heating crucible or well heater were so that the evaporation starting material evaporate into metal vapors (particulate) flies upward and be attached to by on evaporation device or the object.

The advantage of vacuum thermal evaporation board system is evaporation starting material volatilizations and to be attached to the assembly or the speed on the material of being plated very fast, and its shortcoming is as follows:

1, do not adhere to and come off easily by force, cause mottled rough surface.

2, the vacuum tightness of Yao Qiuing wants high, and long (vacuum tightness requires at least 1 * 10 usually and take out the deflated time ^-4More than the Torr), the quality of the high more steaming degree of vacuum tightness can be good more, but the time that vacuumizes simultaneously is also of a specified duration more.

3, waste is steamed and to be crossed starting material because after the volatilization of evaporation starting material, to the four directions fly upward and interior all objects attached to vacuum chamber on, comprise on the chamber walls, be attached to by the just minority on plating device or the object.

Traditional vacuum splashing and plating board system constructs as shown in Figure 2:

In a vacuum chamber, settle a substrate (Substrate) platform (material that substrate just will be plated), the substrate top is provided with a target (target just will plated the film forming material of material surface), connect the voltage (or connecing) of going up opposed polarity between the two with radio-frequency power supply, add the rare gas element (for example argon gas) that feeds trace, form charged ionic cloud (group), charged ion is subjected to effect of electric field, the target of high speed impact negative pole, and the molecule of target excavated, the high speed reverse sputtering is on substrate, slowly on substrate, form thin film, the advantage of vacuum sputtering plating system is being with the high-speed impact substrate because of the target molecule that has been dug by charged ion, even can squeeze in the lattice in substrate surface atom gap deeply, so strong adhesion, be not easy to come off by the formed film of plating material surface, its critical defect is exactly that speed is slow, though have other supplementary mode for example to utilize mode that magnetic field circle helps speeding the speed of sputter (plating), how remained by comparison slowly with other galvanized mode.

Summary of the invention

The purpose of this utility model is according to above-mentioned the deficiencies in the prior art part, a kind of pump ion beam sputtering deposition device is provided, this installs the shortcoming that ingenious design avoided in the above-mentioned technology and has taked both advantages, can apace target plated, very high sticking power is arranged again, and can obtain very good and well-proportioned effect being plated under the situation of material surface unfairness.

The utility model purpose realizes being finished by following technical scheme:

A kind of ion beam sputtering deposition device, comprise a cavity, described inside cavity one side is set with at least one and is used to settle anchor by electronplate, its opposite side is provided with the heater element that is used to heat the former material of evaporation, it is characterized in that: describedly linked to each other by the negative pole of anchor with a closed circuit direct supply by electronplate, described heater element links to each other with the positive pole of described closed circuit direct supply.

Described ion beam sputtering deposition device includes a fine pumping device and a low vacuum pumping device, the aspirating hole of described fine pumping device is arranged in the side that described inside cavity is provided with heater element, and the aspirating hole of described low vacuum pumping device is arranged in the side that described inside cavity is provided with anchor.

Described anchor is a bilayer structure, its internal layer for the conduction internal layer and respectively be connected by the negative pole of electronplate and closed circuit direct supply, its skin is an insulating outer layer.

The utility model has the advantages that: do not waste the evaporation starting material; The speed of steaming is fast, adhesion of coating film strong, good evenness; The thickness, the selectivity that are easy to control plated film are strong.

Description of drawings

Fig. 1 is prior art structural representation I;

Fig. 2 is prior art structural representation II;

Fig. 3 is the utility model example structure synoptic diagram.

Embodiment

The utility model feature and other correlated characteristic are described in further detail by embodiment below in conjunction with accompanying drawing, so that technician's of the same trade understanding:

As Figure 1-3, label 1-8 represents respectively: vacuum (-tight) housing 1, by electronplate 2, heater element 3, anchor 4, vacuum evacuating system 5, rotation pumping 6, magnet 7, target 8.

As shown in Figure 3, the present embodiment device comprises vacuum (-tight) housing 1, and it is an airtight cavity.Vacuum (-tight) housing 1 is communicated with vacuum evacuating system (comprising an oil diffusion pump Pu or molecule pumping) 5 and rotation pumping 6, the venting hole of vacuum evacuating system 5 and rotation pumping 6 lays respectively at the both sides of vacuum (-tight) housing 1 bottom, and the deflation rate of vacuum evacuating system 5 will be higher than the deflation rate of rotating pumping 6.Both find time operation respectively to vacuum (-tight) housing 1 with different deflation rate under, make the inside of vacuum (-tight) housing 1 have different vacuum pressure zones.Other at vacuum evacuating system 5, in the high zone of vacuum (-tight) housing 1 internal vacuum, be provided with heater element 3 (this heater element is identical with heating unit in the existing vacuum thermal evaporation system, is crucible or electric heating device etc. according to the different process demand); Other in rotation pumping 6, the relatively lower vacuum pressure just of vacuum tightness is equiped with one or more groups anchor 4 than higher zone, and between by electronplate 2 and heater element 3, add a closed circuit bias voltage high-voltage electric field, when the gas in the vacuum (-tight) housing 1 (comprising air and other gas) is reached certain vacuum tightness by pump drainage after, the heater element 3 of hot evaporation heats up rapidly, the former material of evaporation (main is metal) gasification is evaporated (particulate), the charged metal ion of the free formation of high-voltage electric field that is heated device 3 and is caused by the higher pressure between the electronplate 2, by the attraction of high electric field negative pole, with high-speed impact connect negative pole by electronplate 2 on.

For realizing above-mentioned bias voltage high-voltage electric field, needed to be communicated with the negative pole of a closed circuit direct supply by electronplate 2 by anchor 4, heater element 3 links to each other with the positive pole of this closed circuit direct supply, and each parts that is provided with in the against vacuum cover 1 have following design simultaneously:

Anchor 4 is a bilayer structure, and its inside is conductive core, and the outside is an insulating outer layer.It is non-conductive to have guaranteed that anchor 4 and vacuum (-tight) housing 1 and other partly insulate, and anchor 4 has the favorable conductive effect with closed circuit grid bias power supply.

As being not conductor material, its surface must be coated with and be covered with Graphite Powder 99 so that its surface becomes conductive surface by electronplate 2.

In conjunction with the structure of the foregoing description, below describe the advantage of this device in detail.

1, do not waste the evaporation starting material, because metal that evaporates or conductor particulate have been dissociated into charged metal ion, because of effect of electric field, connect being attracted in the past with high speed of high voltage negative entirely by electronplate 2, can not attract, therefore can not waste deposition material formed high biasing electric field outer neutral chamber wall and other object.

2, strong adhesion, because formed charged ion by powerful attraction of the negative pole of the inclined to one side electric field of high pressure and with high-speed impact connect negative pole by electronplate 2 on, sticking power extra-heavy, difficult drop-off.

3, it is fast to steam speed, is heated a large amount of conductor corpuscular clouds that evaporate, and moment is by electric fieldization (free or ionization), moment steaming (bump adheres to) negative pole by electronplate 2 on, the speed of steaming is faster.

4, good evenness, owing to all be exposed in the bias voltage high-voltage electric field by the conductive surface of electronplate 2, the surface every bit all has powerful magnetism to the metal or the conductor ion of positively charged, so both made the plated body surface irregular, the film thickness on surface is still very even.

5, be easy to control the thickness of plated film, because most deposition materials are being all in order to steam at plated body surface film, rare waste is equipped with the good homogeneous degree, so can control film thickness easily by the raw-material placement amount of evaporation.

6, selectivity is strong, because the metal ion of positively charged, only the meeting option table is worn the conductive surface impact past of negative electricity, not surface of conductors and economize to skip over, can not impact yet and adhere to the neutral object of biasing electric field, therefore we can utilize the high characteristic of selecting of this innovation electroplating system, remove to do some extraordinary evaporations and keep the zone that does not need evaporation, replace traditional liquid that pollution is arranged with this system and electroplate, and can select to be plated in conductive surface and avoid being plated in and put into same vacuum chamber and do not want by the surface of particulate contaminants.

7, security, because the electric field that added higher pressure produced is in vacuum area, and other vacuum area is the best isolated method of electric current, so security is better than other type on the contrary.

8, pollution-free in environment, owing to steaming in the process whole, the metal ion that is produced attracts do not have dropping point to stay the pollution chamber in the past for biasing electric field totally, and need not any soda acid in the whole process, need not any liquid, no waste water and gas discharging does not pollute, the liquid (water) that can replace traditional high pollution is electroplated, and can be known as free of contamination anhydrous plating.

Claims

1. ion beam sputtering deposition device, comprise a cavity, described inside cavity one side is set with at least one and is used to settle anchor by electronplate, its opposite side is provided with the heater element that is used to heat the former material of evaporation, it is characterized in that: describedly linked to each other by the negative pole of anchor with a closed circuit direct supply by electronplate, described heater element links to each other with the positive pole of described closed circuit direct supply.

2. a kind of ion beam sputtering deposition device according to claim 1, it is characterized in that described ion beam sputtering deposition device includes a fine pumping device and a low vacuum pumping device, the aspirating hole of described fine pumping device is arranged in the side that described inside cavity is provided with heater element, and the aspirating hole of described low vacuum pumping device is arranged in the side that described inside cavity is provided with anchor.

3. a kind of ion beam sputtering deposition device according to claim 1 is characterized in that described anchor is a bilayer structure, its internal layer for the conduction internal layer and respectively be connected by the negative pole of electronplate and closed circuit direct supply, its skin is an insulating outer layer.