CN201478313U - High-frequency high-linearity gallium nitride high electron mobility transistor - Google Patents

Abstract

The utility model relates to a high-frequency high-linearity gallium nitride high electron mobility transistor. The traditional technology can not meet the requirements of high power devices. The high-frequency high-linearity gallium nitride high electron mobility transistor comprises a base, a grid electrode, a source electrode, and a drain electrode, wherein a buffer layer, an insert layer, an isolation layer and a barrier layer are sequentially and epitaxially grown on the base, and the grid electrode, the source electrode and the drain electrode of the transistor are positioned on the barrier layer, and the base is sapphire, silicon or silicon carbide, the buffer layer is GaN, the insert layer is Al0.04Ga0.96N, the isolation layer is AlN, the barrier layer is non-doped Al0.27Ga0.73N, metal of the grid electrode is nickel or gold, the metal of the source electrode is titanium, aluminum, nickel or gold, and the metal of the drain electrode is titanium, aluminum, nickel or gold. The high-frequency high-linearity gallium nitride high electron mobility transistor leads the grid electrode voltage transconductance change of the device to be very small during the working by changing the structure of the epitaxial layers of the device and simultaneously optimizing the relative parameters of the structure of the epitaxial layers, thereby leading the device to have higher linearity and higher characteristic frequency.

Description

The high linear GaN high electron mobility transistor of a kind of high frequency

Technical field

The utility model belongs to microelectronics technology, relates to the high linear GaN high electron mobility transistor of a kind of high frequency.

Background technology

Along with developing rapidly of radio communication, more and more higher to the performance requirement of microwave amplifier, promptly require high frequency, low noise, high power, high efficiency and high linearity.In traditional communication system, under the low frequency, silicon device occupies leading and ascendancy in occupation of the staple market at microwave and millimeter wave frequency range GaAs device.In recent years along with the development of technology, the silicon device millimeter wave frequency band of also can having worked, but the low power density of silicon device can't satisfy the requirement of high-power component.The GaAs device of the microwave and millimeter wave frequency range of can having worked, on high power performance also near its limiting value.AlGaN/GaN HEMT device is because its high-breakdown-voltage and high frequency performance make it become the device of wireless base station of future generation and Military Application intermediate power amplifier potentialization, and the advantage that demonstrates on the linearity and the noiseproof feature also is subjected to people's very big concern and research simultaneously.

The resilient coating of device is isolated and the linearity further improves problem but conventional AlGaN/GaN HEMT still exists.Most of work concentrates on device manufacturing technology and the AlGaN barrier layer, by solving the problems referred to above to the barrier layer optimization and to the improvement of resilient coating crystal mass.It is cost to sacrifice some characteristic in other words conj.or perhaps that but the device overall performance does not take a turn for the better.We have proposed a kind of novel non-doped and compounded raceway groove HEMT, and have proved that with experimental technique this device has the better linearity than the device of conventional structure.Adopt non-doped with Al GaN as barrier layer, AlN can effectively reduce scattering as separator, improves the mobility of two-dimensional electron gas in the raceway groove, shows to be the raising of device frequency on the Devices Characteristics; By the setting of compound raceway groove, inferior raceway groove is to the shielding action of charge carrier under highfield in the tap drain road two-dimensional electron gas, and the device linearity improves; By change, obtain the optimum optimization epitaxial layer structure to the epitaxial loayer structural parameters.

Summary of the invention

The purpose of this utility model just provides the GaN high electron mobility transistor of non-doped epitaxial layer structure of a kind of high linearity and parameter optimization.

The utility model device comprises substrate, in the substrate successively epitaxial growth resilient coating, insert layer, separator, barrier layer are arranged, transistorized grid, source electrode and drain electrode are positioned on the barrier layer.

The material of described substrate is sapphire, silicon or carborundum;

Described resilient coating is that thickness is the GaN of 2.5 μ m;

Described insert layer is that thickness is the Al of 8nm _0.04Ga _0.96N;

Described separator is that thickness is 1nm AlN;

Described barrier layer is that thickness is the non-doped with Al of 22nm _0.27Ga _0.73N;

Described gate metal is that nickel/gold, source metal are that titanium/aluminium/nickel/gold, drain metal are titanium/aluminium/nickel/gold.

The routine techniques means are adopted in the epitaxial growth of each layer in the utility model method, and inventive point of the present utility model is the epitaxial layer structure of device and the relevant parameter of each epitaxial loayer.

The utility model is by changing the epitaxial layer structure of device, optimize the relevant parameter of epitaxial layer structure simultaneously, making that device mutual conductance variation of grid voltage device in the certain limit working range when work is very little, also is that device has higher linearity and higher characteristic frequency.

Description of drawings

Fig. 1 is a structural representation of the present utility model.

Embodiment

A kind of non-doped gallium nitride High Electron Mobility Transistor comprises sapphire substrates 1, on the sapphire substrates 1 successively epitaxial growth thickness is arranged is that GaN resilient coating 2, the thickness of 2.5 μ m is the Al of 8nm _0.04Ga _0.96N insert layer 3, thickness are that 1nm AlN separator 4, thickness are the Al of the non-doping of 22nm _0.27Ga _0.73N barrier layer 5.Transistorized grid 6, source electrode 7 and draining 8 is positioned on the barrier layer 5, and gate metal is that nickel/gold, source metal are that titanium/aluminium/nickel/gold, drain metal are titanium/aluminium/nickel/gold.

Practice shows, the mutual conductance of grid voltage device in the certain limit working range changes very for a short time during the GaN high electron mobility transistor work of this kind structural parameters, and device has the higher characteristic frequency and the linearity.

Claims (1)

1. the high linear GaN high electron mobility transistor of a high frequency comprises substrate, it is characterized in that: in the substrate successively epitaxial growth resilient coating, insert layer, separator, barrier layer are arranged, transistorized grid, source electrode and drain electrode are positioned on the barrier layer;

The material of described substrate is sapphire, silicon or carborundum;

Described resilient coating is that thickness is the GaN of 2.5 μ m;

Described insert layer is that thickness is the Al of 8nm _0.04Ga _0.96N;

Described separator is that thickness is 1nm AlN;

Described barrier layer is that thickness is the non-doped with Al of 22nm _0.27Ga _0.73N;

Described gate metal is that nickel/gold, source metal are that titanium/aluminium/nickel/gold, drain metal are titanium/aluminium/nickel/gold.