CN201478255U

CN201478255U - Ion source of ion implanter

Info

Publication number: CN201478255U
Application number: CN2009202096145U
Authority: CN
Inventors: 简志宏; 王振辉
Original assignee: Semiconductor Manufacturing International Shanghai Corp
Current assignee: Semiconductor Manufacturing International Beijing Corp
Priority date: 2009-09-11
Filing date: 2009-09-11
Publication date: 2010-05-19
Anticipated expiration: 2019-09-11

Abstract

The utility model provides an ion source of an ion implanter, a reaction chamber thereof and components thereof are all meal materials, wherein the inner surface of the reaction chamber becomes rough through treating, simultaneously, the inner surface of the reaction chamber is rugged to provide regular surface characteristic patterns. The ion source of the ion implanter leads deposit sediments to be easily adhered on the inner wall of the reaction chamber and not to fall through increasing the roughness rate on the inner surface of the reaction chamber of the ion source on one side, on the other side, the number of the deposit sediments on the unit area is reduced through increasing the area of the inner surface of the reaction chamber, and the production efficiency of electric pulp can further be increased simultaneously. The ion source of the ion implanter can reduce the maintenance charge of the ion implanter. The utility model provides an ion injection method, which can directly transform particles, and further effectively uses equipment, and increases the production rate.

Description

The ion source of ion implantor

Technical field

The utility model belongs to the chip manufacturing field, relates in particular to a kind of ion source of ion implantor.

Background technology

The crystal structure of intrinsic silicon is formed by the covalent bond of silicon, and the conductivity of intrinsic silicon is very poor, therefore need its structure and conductance be changed to wherein adding small amount of impurities, and silicon just can become useful semiconductor.This process is called as doping, and it is most important doping method that ion injects.

It is a kind of impurity to silicon substrate introducing may command quantity that ion injects, to change the method for its electric property.As Fig. 1, existing ion implantor comprises a reaction chamber (chamber), and the reaction chamber both sides are provided with negative electrode (cathode), reflector (reflector), attacks gas at the reaction chamber inner high voltage, produces the electricity slurry.Have deposit and produce in this process, this deposit derives from gas itself on the one hand may have impurity, is the product behind the gas ionization on the other hand.

Accumulation of deposits is to cause the unsettled factor of ion beam, and can destroy the integrated of technology, and ionogenic instability can be brought two subject matters.A problem is in wafer process because the moment beam electronic current that high-voltage breakdown causes disappears, and this can cause injecting undesirable particle on wafer in a certain period; Such high voltage fault can cause the inhomogeneous and particle contamination of injection.The drift that unsettled another problem of beam electronic current is a beam electronic current causes, can produce the implantation dosage error.These technology integration problems can make the unpredictable of ionogenic replacement operation change.

Above-mentioned deposit is usually attached to the reaction chamber inner surface, and the material of reaction chamber inner surface is smooth metal, and deposit can come off easily because of the smooth of variation of temperature in the reaction chamber and reaction chamber inner surface; Simultaneously; for producing electrical potential difference, negative electrode, reflector do not contact with arc reaction chamber assembly but distance is very near, can cause short circuit because there is deposit to fall into usually between negative electrode and the arc reaction chamber; cause negative electrode and reaction chamber assembly forfeiture electrical potential difference, thereby cause the operation failure.For avoiding the generation of short circuit, need often to safeguard above-mentioned ion implantation device; And because the inner surface of reaction chamber is too smooth, deposit is easy to regard to landing, and maintenance period is very short accordingly.

In addition, existing method for implanting utilizes existing ion source, needs certain interval of time between two different ion implantation technologies, injects clean air usually in this blanking time, to avoid particle contamination.This method not only can not make full use of equipment, but also needs to inject clean air, thereby increases cost.

For reducing the service efficiency of cost, raising equipment, need a method that increases the plant maintenance cycle.

The utility model content

The purpose of this utility model provides a kind of ion source of ion implantor, and this ion source can enlarge the maintenance period of equipment.

Another purpose of the present utility model provides the method that above-mentioned ion source injects ion.

To achieve these goals, the utility model provides a kind of ion source of ion implantor, comprises a reaction chamber, and this reaction chamber inner surface is a metal material, and this reaction chamber inner surface becomes coarse through handling.So that the surface characteristics pattern of rule to be provided, the axial cross section of described reaction chamber inner surface is uneven so that series of grooves to be provided by uneven for optional described reaction chamber inner surface.Optionally, the depth bounds of described groove is that 1mm is to 5mm.

Optionally, described groove has any following shape of cross section: V-type, U type, sawtooth pattern or box groove.

Compared with prior art, the ion source of the ion implantor that the utility model discloses on the one hand by improving the roughness of reaction chamber inner surface, makes that deposit is easier not to come off attached to the inwall of reaction chamber; By the area of augmenting response inner cavity surface, reduce the sedimental quantity of unit are on the other hand, can also improve the efficient that produces the electricity slurry simultaneously.The utility model can reduce the ionogenic maintenance cost of ion implantor.In addition, the ionogenic ion injection method of the new utility model of utilization that this method provides can carry out the direct conversion of particle, has more effectively utilized equipment, boosts productivity.

Description of drawings

The structure chart of Fig. 1 embodiment one intermediate ion implanter reaction chamber.

The cross-sectional view on Fig. 2～Fig. 5 embodiment two intermediate ion implanter reaction chamber surfaces.

Fig. 6 is the structure chart of the utility model ion implantor reaction chamber.

Description of reference numerals:

1, reaction chamber;

2, negative electrode;

3, reflector;

4, the reaction chamber assembly one;

5, the reaction chamber assembly two.

Embodiment

Below in conjunction with drawings and Examples the utility model is done concrete introduction.

Embodiment one

See also Fig. 1, the utility model has been introduced a kind of novel ion source that can reduce ion implantor ion source maintenance cost, comprise a reaction chamber 1, reaction chamber 1 stretches into the part of reaction chamber 1 by reaction chamber assembly 1 (inwall of reaction chamber axial direction), reaction chamber assembly 25 (inwall of reaction chamber longitudinal direction), negative electrode 2 and part that reflector 3 stretches into reaction chamber 1 surrounds.

Wherein, reaction chamber 1 inner surface (comprising reaction chamber assembly 1, reaction chamber assembly 2 5) is a metal material, does not come off for making the easier inwall attached to reaction chamber of the deposit that generates in the reaction chamber, and reaction chamber 1 inner surface becomes coarse through handling.Thus, can increase the maintenance period of ion implantor, reduce frequency of maintenance, thereby reduce expensive maintenance cost, fundamentally reduce manufacturing cost; Can also improve the service time of equipment in addition, save manufacturing cost from two aspects.

The utility model has also been introduced a kind of method of utilizing above-mentioned ion source to inject ion, and this method is directly carried out the second particle injection technology after the first particle injection technology.The utility model can carry out the direct conversion of particle, for example can be directly changed into phosphorus technology after carrying out boron technology, and the foundries that such technological flexibility satisfies client's needs for the needs replacing reaction time is an important factor.The direct conversion that this method can be carried out particle has more effectively utilized equipment, boosts productivity.

Embodiment two

See also Fig. 6, the difference of present embodiment and embodiment one is that in the present embodiment, reaction chamber 1 inner surface is uneven, and promptly the inner surface of reaction chamber assembly 1, reaction chamber assembly 25 is uneven, and its axial cross section presents the picture on surface of rule.

As Fig. 2 A～2C be the utility model second embodiment can be practical patterned surface, surface 202 has the V-type groove 204 of a series of that adjoin, line style, described groove 204 is arranged side by side, to form continuous ansa 206 and sharp paddy 208.Shown in Fig. 2 b, the size of groove 204 can be characterized by size A and B, and described size A and B correspond respectively to the degree of depth and spacing.These sizes can have various values, and needn't be all identical.The representative value of A and B can be the scope of 1mm to 5mm.

Embodiment three

Is that reaction chamber 1 inner surface of the 3rd embodiment of the present utility model is uneven as Fig. 3 a to 3c, and promptly the inner surface of reaction chamber assembly 1, reaction chamber assembly 25 is uneven, and its axial cross section presents the picture on surface of rule.For the side that shows open channel 304 needn't adopt with Fig. 2 a to the identical angle of 2c, Fig. 3 a has a vertical side and an inclined side to the groove 304 of 3c.Can be clear that as end view this layout obtains zigzag appearance from Fig. 3 b.Groove 304 can be characterized by size A that corresponds respectively to the degree of depth and spacing and B.As the embodiment of Fig. 2 a to 2c, 1mm is suitable to the typical sizes of 5mm.

Embodiment four

Though thereby Fig. 2 a has groove 204 and the 304

formation ansas

206 and 306 that adjoin to 2c and Fig. 3 a to the embodiment shown in the 3c, groove also can be separated.This obtains flat between adjacent groove 204,304.These flats should have little width (for example 1mm is between the 5mm), to prevent sedimental formation.Fig. 4 a shows the example that has by the roughened surface 402 of flat 404 separated grooves 404 to 4c.In these figure, parts 400 have the groove 404 of series of parallel groove 404 forms.Groove 404 has flat bottom 408 and vertical side 410.Exemplary depth A be 1mm to 5mm, the representative width B of flat top 406 and flat bottom 408 also for 1mm to 5mm.

Embodiment 5

Fig. 5 a shows the utility model the 5th embodiment to 5c, and wherein, parts 500 have the surface with rule feature 502 that comprises a series of recess channels 504.See that as knowing the raceway groove 504 of basic U-shaped is separated by flat 506 from Fig. 5 b.See that as knowing recess channel 504 can adjoin, to form ansa 506 from above.By each recess channel 504 right angle can be less than 180 degree, shown in Fig. 5 a and 5b.

The embodiment of Fig. 2 to 5 all shows groove 204,304,404 and 504 side by side.But being staggered of groove also can be used for roughened surface 202,302,402 and 502.For example, two groups of that arrange and emissions grooves 204,304,404 and 504 can be with the formation each other in certain angle, thereby staggered, improves sedimental adhesive strength, and then reduce the maintenance cost of ion implantor.

The ionogenic life-span changes with the difference of injecting type and application, and the possible life-span fluctuation range of medium current implanter is 100-500 hour, and the normally 500 hours life-span of actual lamp filaments.The utility model reaches 100% ion source, all runs to burn-out life 500 hours, in addition in some cases running time longer.Because just the physics that material is carried out changes, so adopt new technology that wafer is not had harmful effect.The ionogenic average life span of medium current implanter or high velocity stream implanter is 295 hours, that is to say that annual every implantation tool needs 27 ion sources, if in foundries, adopt new technology ion source, life-span is doubled to 590 hours, the ion source that every instrument needs is replaced number and is reduced 12-14, so just can and consume partly and reduce about 50% cost.

Replace ion source and on average need 5-6 hour, comprise the source replacement of time and the inspection of instrument, therefore the minimizing of replacing number, also just equal annual every equipment and obtained the extra 66 hours operating time, and the inspection technology that has reduced half, can reduce taking to technology in the foundries and checkout facility.

Above embodiment is the unrestricted the technical solution of the utility model in order to explanation only.Any modification or partial replacement that does not break away from the utility model spirit and scope all should be encompassed in the middle of the claim scope of the present utility model.

Claims

1. the ion source of an ion implantor comprises a reaction chamber, and this reaction chamber inner surface is a metal material, it is characterized in that, this reaction chamber inner surface becomes coarse through handling.

2. the ion source of ion implantor according to claim 1 is characterized in that, described reaction chamber inner surface by uneven so that the surface characteristics pattern of rule to be provided.

3. as the ion source of ion implantor as described in the claim 2, it is characterized in that the axial cross section of described reaction chamber inner surface is uneven so that series of grooves to be provided.

4. as the ion source of ion implantor as described in the claim 3, it is characterized in that the depth bounds of described groove is that 1mm is to 10.5mm.

5. as the ion source of ion implantor as described in the claim 3, it is characterized in that described groove has any following shape of cross section: V-type, U type, sawtooth pattern or box groove.