CN201436992U - 980 nm high-power semiconductor laser device for vaporization and ablation of prostate - Google Patents
980 nm high-power semiconductor laser device for vaporization and ablation of prostate Download PDFInfo
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- CN201436992U CN201436992U CN2009200856882U CN200920085688U CN201436992U CN 201436992 U CN201436992 U CN 201436992U CN 2009200856882 U CN2009200856882 U CN 2009200856882U CN 200920085688 U CN200920085688 U CN 200920085688U CN 201436992 U CN201436992 U CN 201436992U
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Abstract
The utility model relates to a 980 nm high-power semiconductor laser device for vaporization and ablation of prostate, wherein the core part of the laser system of the laser device is a high-power semiconductor laser device consisting of a high-power semiconductor laser diode and a light beam reshaping and focusing system inside, and finally, the laser is outputted by connecting with a side transmitting optical fiber. The continuous power of the outputted laser can reach 150 W and the laser can penetrate water and be absorbed directly by tissues to have efficient vaporization effect to the prostatic tissue; the duration of surgery is short; and the semiconductor laser device can reduce the pain of the patient and is not easy to cause bleeding and edema of the surrounding tissues.
Description
Technical field
This utility model relates to medical instruments field, particularly a kind of high-power semiconductor laser device that is used for the 980nm that prostate vaporization melts.
Background technology
Along with the raising of people's living standard, the patient of benign prostatauxe (hypertrophy) is more and more common.Patient's clinical manifestation is: gently then be frequent micturition, urgent micturition; Heavy then for can not urinate, urine retention or urinary incontinence, have a strong impact on patient's orthobiosis.Therefore, therapeutic prostate hyperplasia (hypertrophy) seems particularly important as early as possible.At present, Therapeutic Method commonly used clinically has:
(1) electricity cutting method promptly adopts electricity cutting to remove unnecessary prostata tissue by urethra.The method causes a lot of side effect easily, as urinary incontinence, sexual impotence, inverse morphism essence, hemorrhage many, electricity cutting syndrome such as the time is long, even causes massive hemorrhage in the operation process.
(2) thermocoagulation method promptly adopts reactance component, at 45 ℃ of following heat tissues, makes tissue coagulation as electromagnetic wave, microwave or long wave laser etc.The method is owing to adopt heat treated tissue, so cause easily and organize long-time edema, dysurea, needs the urethral catheterization of long-time insertion urethral catheter, causes superinfection easily.
(3) laser vaporization method as application number CN200710055400.2, promptly adopts traditional laser such as 1064nm laser vaporization or melts prostata tissue.Its advantage is that haemostatic effect is good, and shortcoming is that vaporization efficency is low, and operating time is long, causes edema easily, needs the long-time urethral catheter urethral catheterization of inserting equally, causes superinfection easily.
(4) the green laser vaporization method of 532nm as application number CN200610026368.0, promptly adopts 532nm's
Green laser vaporization or melt prostata tissue, its advantage is that haemostatic effect is good, the vaporization efficency height, operating time is short, is difficult for causing the surrounding tissue edema, does not need to insert the urethral catheter urethral catheterization or only need short time urethral catheter urethral catheterization, shortcoming is that equipment is huge, laser power is difficult to accomplish good stability, and power consumption is big, apparatus expensive, maintainable poor, the periphery needs recirculated water to come cooling device, and equipment is bad easily, and the life-span had only about 2000 hours.
The utility model content
In order to solve the problems of the technologies described above, this utility model provides a kind of 980nm high-power semiconductor laser device that is used for prostate vaporization and melts, be made up of Laser Power Devices, current feedback resistance, semiconductor laser, semiconductor cooler, radiator and side emission optical fiber etc., wherein semiconductor laser wavelength is 980nm; Correspondingly, power source of semiconductor laser adopts the Laser Power Devices of belt current feedback, carries out constant current control; The numerical aperture NA=0.22 of semiconductor laser; The minimum suitable core diameter of semiconductor laser is 400 μ m; In the process of using, the optical fiber that adopts side emission help extending into preferably affected part, and the core diameter of the optical fiber of side emission is 600～800 μ m as output optical fibre; In the work process of instrument, produce a large amount of heats, this device adopts Thermal Electric Cooler (TEC) to freeze, and Thermal Electric Cooler (TEC) is attached between semiconductor laser and the radiator, and fan is equipped with in the bottom at radiator, and the heat of radiator is taken away by fan.
This semicondcutor laser unit system, be made up of Laser Power Devices 1, current feedback resistance 2, semiconductor laser 3, semiconductor cooler 4, radiator 5 and side emission optical fiber 6, described high-power semiconductor laser device system also comprises electric power system, main control singlechip, temperature control single-chip microcomputer, liquid crystal control system;
Described semiconductor laser wavelength is 980nm, and Laser Power Devices 1 link to each other with semiconductor laser 3 by current feedback resistance 2, constitutes feedback circuit, and the outfan of semiconductor laser 3 is connected with side emission optical fiber 6;
Described semiconductor laser 3 inside are made up of laser diode, colimated light system and coupling focusing system; And by Laser Power Devices 1 control output, set electric current and constitute feedback circuit by current feedback resistance, the output of control Laser Power Devices crossing current, when electric current reached laser threshold, laser diode was launched high-octane 980nm laser, and peak power can reach 150w; The temperature of laser diode is controlled between 20～35 ℃, and freezes by 4 block semiconductor refrigerators 4;
Described semiconductor cooler 4 pastes and is placed between semiconductor laser 3 and the radiator 5; The heat of semiconductor laser 3 is transmitted on the radiator 5, takes away through fan again;
Described temperature control single-chip microcomputer 6 links to each other with fan with semiconductor cooler 4, control semiconductor cooler 4 and rotation speed of the fan;
Each system of described main control singlechip and other links to each other, and is used to control whole system start flow process and signal, alarm signal is provided, and by RS232 interface control liquid crystal system, control shows the liquid crystal display content, and connects the temperature control single-chip microcomputer by I/O;
Described liquid crystal control system links to each other with main control singlechip by the RS232 serial ports, and the demonstration and the touch signal of control liquid crystal by the RS232 serial communication, send to main control singlechip with signal;
Described electric power system links to each other with described Laser Power Devices 1, for Laser Power Devices 1 provide electric power, and is the electronic device power supply of each control system.
Employing the utility model has the advantages that: the laser of laser instrument emission 980nm, peak power can reach 150W, can permeate water directly be organized absorption.By cystoscope system, it is efficiently vaporized under the cooling of normal saline to prostata tissue; Operating time is short, only needs to finish in 20～30 minutes, reduces patient's misery; And be difficult for causing the surrounding tissue edema; Do not need to insert urethral catheter or only need the short time to adopt urethral catheter; Can not bring other side effect such as sexual impotence, and in the operation process, the self-solidifying effect of laser can guarantee that the whole surgery process is not hemorrhage or go out a small amount of blood, reduce the danger of operation, be a kind of safe and effective procedure for the treatment of prostatic hyperplasia.
Description of drawings
Describe embodiment of the present utility model in detail below in conjunction with accompanying drawing:
Fig. 1 is this utility model structural representation.
Fig. 2 is this utility model systematic schematic diagram.
Labelling among the figure: 1-Laser Power Devices; 2-current feedback resistance; The 3-semiconductor laser; The 4-semiconductor cooler; The 5-radiator; 6-side emission optical fiber.
The specific embodiment
Understand and the enforcement utility model for the ease of those of ordinary skills, this utility model is described in further detail below in conjunction with the drawings and the specific embodiments.
Therapeutic instrument A produces 980nm, and the laser of 150W by the side emission fiber-optic transfer, is equipped with emitting head at the optical fiber head, this optical fiber by cystoscope per urethram mouth enter into the prostatic hyperplasia place.When Laser emission, laser to sending, just in time acts on hyperplastic prostate tissue from the head side of side emission optical fiber.Hyperplastic prostate tissue is vaporized and is melted under the 980nm laser action.In the whole surgery process, optical fiber and hyperplastic prostate tissue all are immersed in the middle of the physiological cycle saline, guarantee that optical fiber is cooled always, and the tissue residue thing after vaporization is melted is along with physiological cycle saline is taken out of external.In whole process, physiological cycle saline passes in and out via cystoscope.
Fig. 1 has provided structural representation of the present utility model, form by Laser Power Devices 1, current feedback resistance 2, semiconductor laser 3, semiconductor cooler 4, radiator 5 and side emission optical fiber 6, described semiconductor laser wavelength is 980nm, Laser Power Devices 1 link to each other with semiconductor laser 3 by current feedback resistance 2, constitute feedback circuit, the outfan of semiconductor laser 3 is connected with side emission optical fiber 6; Described semiconductor laser 3 inside are made up of laser diode, colimated light system and coupling focusing system; Described semiconductor cooler 4 pastes and is placed between semiconductor laser 3 and the radiator 5.Described semiconductor laser 3 also has temperature probe, HONGGUANG aiming light emitting devices and the chain alarm device of optical fiber.The numerical aperture of described semiconductor laser 3 is 0.22NA.The core diameter of described side emission optical fiber 6 is 600～800 μ m.Described semiconductor laser 3 is by Laser Power Devices 1 control output, set electric current and constitute feedback circuit by current feedback resistance, the output of control Laser Power Devices crossing current is when electric current reaches laser threshold, laser diode is launched high-octane 980nm laser, and peak power can reach 150w.The temperature of described laser diode is controlled between 20～35 ℃, and freezes by 4 block semiconductor refrigerators 4.Described semiconductor cooler 4 is transmitted to the heat of semiconductor laser 3 on the radiator 5, takes away through fan again.，
Fig. 2 has provided systematic schematic diagram of the present utility model, be made up of Laser Power Devices 1, current feedback resistance 2, semiconductor laser 3, semiconductor cooler 4, radiator 5 and side emission optical fiber 6, described high-power semiconductor laser device system also comprises electric power system, main control singlechip, temperature control single-chip microcomputer, liquid crystal control system; Described semiconductor laser wavelength is 980nm, and Laser Power Devices 1 link to each other with semiconductor laser 3 by current feedback resistance 2, constitutes feedback circuit, and the outfan of semiconductor laser 3 is connected with side emission optical fiber 6; Described semiconductor laser 3 inside are made up of laser diode, colimated light system and coupling focusing system; And by Laser Power Devices 1 control output, set electric current and constitute feedback circuit by current feedback resistance, the output of control Laser Power Devices crossing current, when electric current reached laser threshold, laser diode was launched high-octane 980nm laser, and peak power can reach 150w; The temperature of laser diode is controlled between 20～35 ℃, and freezes by 4 block semiconductor refrigerators 4; Described semiconductor cooler 4 pastes and is placed between semiconductor laser 3 and the radiator 5; The heat of semiconductor laser 3 is transmitted on the radiator 5, takes away through fan again; Described temperature control single-chip microcomputer 6 control semiconductor cooler 4 and rotation speeds of the fan; Described main control singlechip is used to control whole system start flow process and signal, alarm signal is provided, and by RS232 interface control liquid crystal system, control shows the liquid crystal display content, and connects the temperature control single-chip microcomputer by I/O; The demonstration and the touch signal of described liquid crystal control system control liquid crystal by the RS232 serial communication, send to main control singlechip with signal; Described electric power system provides electric power, for described Laser Power Devices 1 provide electric power, and is the electronic device power supply of each control system.
Described Laser Power Devices 1 comprise emergency stop switch and key switch, A.C. contactor, divide 5V and two powerful Switching Power Supplies of 24V, for whole system provides power supply, and link to each other with described main control singlechip 5 by SPI A/D or I2C A/D converter.It can also be seen that from Fig. 2 described semiconductor laser 3 embodies following components when running, have pilot light, laser temperature probe, optical fiber interlock switch, power probe and various surgical grade stainless steels.Semiconductor laser device driving circuit among Fig. 2, the loop that provides laser current to control is the main part of laser works, 150W semiconductor laser 3 is generating device of laser, is the core of whole system.Main control singlechip is also controlled with lower device: loudspeaker, foot switch, door interlock switch, warning system, and bright dipping indication of control laser and RS232 interface.Described liquid crystal control system is liquid crystal display screen or touch screen.
Claims (7)
1. one kind is used for prostate vaporization and the 980nm high-power semiconductor laser device system that melts, be made up of Laser Power Devices (1), current feedback resistance (2), semiconductor laser (3), semiconductor cooler (4), radiator (5) and side emission optical fiber (6), it is characterized in that: described high-power semiconductor laser device system also comprises electric power system, main control singlechip, temperature control single-chip microcomputer, liquid crystal control system; Described semiconductor laser wavelength is 980nm, and Laser Power Devices (1) link to each other with semiconductor laser (3) by current feedback resistance (2), constitutes feedback circuit, and the outfan of semiconductor laser (3) is connected with side emission optical fiber (6);
Described semiconductor laser (3) is inner to be made up of laser diode, colimated light system and coupling focusing system; And by Laser Power Devices (1) control output, set electric current and constitute feedback circuit by current feedback resistance, the output of control Laser Power Devices crossing current, when electric current reached laser threshold, laser diode was launched high-octane 980nm laser, and peak power can reach 150w; The temperature of laser diode is controlled between 20～35 ℃, and freezes by 4 block semiconductor refrigerators (4);
Described semiconductor cooler (4) pastes and is placed between semiconductor laser (3) and the radiator (5); The heat of semiconductor laser (3) is transmitted on the radiator (5), takes away through fan again;
Described temperature control single-chip microcomputer (6) links to each other with fan with semiconductor cooler (4), control semiconductor cooler (4) and rotation speed of the fan;
Each system of described main control singlechip and other links to each other, and is used to control whole system start flow process and signal, alarm signal is provided, and by RS232 interface control liquid crystal system, control shows the liquid crystal display content, and connects the temperature control single-chip microcomputer by I/O;
Described liquid crystal control system links to each other with main control singlechip by the RS232 serial ports, and the demonstration and the touch signal of control liquid crystal by the RS232 serial communication, send to main control singlechip with signal;
Described electric power system links to each other with described Laser Power Devices (1), for Laser Power Devices (1) provide electric power, and is the electronic device power supply of each control system.
2. semicondcutor laser unit according to claim 1 is characterized in that: described semiconductor laser (3) also has temperature probe, HONGGUANG aiming light emitting devices and the chain alarm device of optical fiber.
3. semicondcutor laser unit according to claim 1 is characterized in that: the numerical aperture of described semiconductor laser (3) is NA=0.22.
4. semicondcutor laser unit according to claim 1 is characterized in that: the core diameter of described side emission optical fiber (6) is 600～800 μ m.
5. according to the described semicondcutor laser unit of each claim among the claim 1-4, it is characterized in that: described Laser Power Devices (1) comprise emergency stop switch and key switch, A.C. contactor, divide 5V and two powerful Switching Power Supplies of 24V, for whole system provides power supply, main control singlechip (5) comes the output of gauge tap power supply by SPIA/D or I2C A/D converter.
6. semicondcutor laser unit according to claim 1 is characterized in that: described main control singlechip is also controlled with lower device: loudspeaker, foot switch, door interlock switch, warning system, and bright dipping indication of control laser and RS232 interface.
7. semicondcutor laser unit according to claim 1 is characterized in that: described liquid crystal control system is the touch LCD screen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200856882U CN201436992U (en) | 2009-05-13 | 2009-05-13 | 980 nm high-power semiconductor laser device for vaporization and ablation of prostate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200856882U CN201436992U (en) | 2009-05-13 | 2009-05-13 | 980 nm high-power semiconductor laser device for vaporization and ablation of prostate |
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| Publication Number | Publication Date |
|---|---|
| CN201436992U true CN201436992U (en) | 2010-04-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200856882U Expired - Fee Related CN201436992U (en) | 2009-05-13 | 2009-05-13 | 980 nm high-power semiconductor laser device for vaporization and ablation of prostate |
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| CN (1) | CN201436992U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101897619A (en) * | 2010-07-12 | 2010-12-01 | 中国科学院长春光学精密机械与物理研究所 | Long-wave high-power semiconductor laser comprehensive therapeutic instrument |
| CN101999934A (en) * | 2010-11-18 | 2011-04-06 | 苏州生物医学工程技术研究所 | Portable varicosity semiconductor laser therapeutic apparatus |
-
2009
- 2009-05-13 CN CN2009200856882U patent/CN201436992U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101897619A (en) * | 2010-07-12 | 2010-12-01 | 中国科学院长春光学精密机械与物理研究所 | Long-wave high-power semiconductor laser comprehensive therapeutic instrument |
| CN101999934A (en) * | 2010-11-18 | 2011-04-06 | 苏州生物医学工程技术研究所 | Portable varicosity semiconductor laser therapeutic apparatus |
| CN101999934B (en) * | 2010-11-18 | 2012-10-24 | 苏州生物医学工程技术研究所 | Portable varicosity semiconductor laser therapeutic apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100414 Termination date: 20130513 |