CN201434945Y - Modulation device for optically-controlled flat-plate silicon photonic crystal terahertz wave - Google Patents
Modulation device for optically-controlled flat-plate silicon photonic crystal terahertz wave Download PDFInfo
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- CN201434945Y CN201434945Y CN2009201184295U CN200920118429U CN201434945Y CN 201434945 Y CN201434945 Y CN 201434945Y CN 2009201184295 U CN2009201184295 U CN 2009201184295U CN 200920118429 U CN200920118429 U CN 200920118429U CN 201434945 Y CN201434945 Y CN 201434945Y
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- line defect
- terahertz wave
- photonic crystal
- defect area
- flat panel
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Abstract
The utility model discloses a modulation device for an optically-controlled flat-plate silicon photonic crystal terahertz wave. The modulation device comprises a silicon wafer, air holes, a modulatedsemiconductor laser, a terahertz wave source, a line defect area input end, a line defect area output end and a line defect area, wherein the line defect area is arranged in the middle of the siliconwafer; the air holes are arranged on the silicon wafer at both sides of the line defect area; the silicon wafer, the air holes and the line defect area form a flat-plate silicon photonic crystal; themodulated semiconductor laser is arranged above the line defect area; and the terahertz wave generated by the terahertz wave source is input from the line defect area input end and output from the line defect area output end through the line defect area. The terahertz wave is modulated by utilizing the forbidden band edge of the flat-plate silicon photonic crystal to realize the loading of the signal on the terahertz wave. The modulation device has the advantages of small transmission loss, large modulation bandwidth, fast modulation speed, high extinction ratio, small size, compact structureand convenient integration and meets the requirement of terahertz wave communication.
Description
Technical field
The utility model relates to the THz wave applied technical field, relates in particular to a kind of terahertz wave modulating device with light control flat panel silicon photonic crystal.
Background technology
Terahertz (THz, 1THz=10E+12Hz) to typically refer to frequency range be the electromagnetic radiation as waves of 0.1THz to 10THz in radiation, this wave band is positioned at the intersection of electronics and optics, it occupies a very special position in electromagnetic wave spectrum, have a series of special natures and important science and using value.Terahertz communication has that the resource of frequency range is abundant, bandwidth is big, good confidentiality, be not subjected to the influence of distant place electronic interferences, even the third party also is difficult to receive the Terahertz signal of communication in the locality, can be implemented in the secret communication in 2～5Km scope, transfer rate can reach advantages such as 1～10Gb/s, and Terahertz communication need not radio control department approval, so THz wave has unique advantage in use the communications field.
At present, the Terahertz wave source that is used for carrying out THz wave communication mainly contains: the continuous T Hz ripple of (1) Gunns diode emission.The Gunns diode output power is higher, but Gunns diode frequency is non-adjustable, can be used for the THz wave communication of fixed frequency.(2) quantum cascade laser.Quantum cascade laser may play a significant role in following THz wave communication, but its operation also needs sub-cooled (liquid helium or liquid nitrogen) at present, and low frequency output (＜2THz) very difficult, the frequency adjustable scope is little.(3) backward wave oscillator (BWO).The advantage of BWO is can realize tuning and adopt different carcinotrons can select different output frequencies, and its output frequency can cover 0.1～1.5THz at present, and the space quality of output wave is better, can be used for THz wave communication.The application of BWO at present, or be used for spectrum analysis, or be used for the imaging detection, and BWO is applied to the THz wave communication, still there is not such technology both at home and abroad.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of terahertz wave modulating device with light control flat panel silicon photonic crystal is provided.
Terahertz wave modulating device with light control flat panel silicon photonic crystal comprises silicon chip, airport, the semiconductor laser that can modulate, the Terahertz wave source, line defect district input end, line defect district output terminal, the line defect district, be provided with the line defect district in the middle of on the silicon chip, have airport on the silicon chip of online defect area both sides, by silicon chip, airport, constitute flat panel silicon photonic crystal with the line defect district, the top of online defect area is provided with the semiconductor laser that can modulate, import by line defect district input end by the THz wave that the Terahertz wave source sends, by the line defect district, the output of warp defect area output terminal.
The refractive index of described silicon chip is 3.4～3.8, silicon wafer thickness 0.4～1.0mm, resistivity 1000～10000 Ω cm of silicon chip.The radius of airport is 40～200 μ m, and the cycle of airport is 80～250 μ m.The width in line defect district is the cycle of 1～5 airport.The operation wavelength of the semiconductor laser that can modulate is 680～900nm, power 5～500mW, and modulating speed is 50KHz/s～1GHz/s.The Terahertz wave source is backward wave oscillator BWO.
It is little that the utility model advantage is that this terahertz wave modulating device with light control flat panel silicon photonic crystal has loss, and modulation band-width is big, and modulating speed is fast, the extinction ratio height, and size is little, and compact conformation is convenient to integrated advantage, satisfies the THz wave communication requirement.
Description of drawings
Fig. 1 (a) is the terahertz wave modulating device with light control flat panel silicon photonic crystal synoptic diagram;
Fig. 1 (b) is the terahertz wave modulating device with light control flat panel silicon photonic crystal cross sectional representation;
Fig. 2 (a) is the semiconductor laser that can modulate when not sending laser, the forbidden photon band figure of flat panel silicon photonic crystal;
Fig. 2 (b) is the semiconductor laser that can modulate when sending laser radiation to the line defect district, and the refractive index of flat panel silicon photonic crystal changes, and the forbidden photon band of flat panel silicon photonic crystal produces translation, the forbidden photon band figure that changes;
Fig. 3 is the guided mode figure that silicon chip, airport and line defect district constitute flat panel silicon photonic crystal;
Fig. 4 (a) is the semiconductor laser that can modulate when not sending laser, the stable state transmission situation synoptic diagram of THz wave in flat panel silicon photonic crystal;
Fig. 4 (b) is the semiconductor laser that can modulate when sending laser radiation to the line defect district, the stable state transmission situation synoptic diagram of THz wave in flat panel silicon photonic crystal;
Among the figure: silicon chip 1, airport 2, the semiconductor laser 3 that can modulate, Terahertz wave source 4, line defect district input end 5, line defect district output terminal 6, line defect district 7.
Embodiment
Terahertz wave modulating device with light control flat panel silicon photonic crystal comprises silicon chip 1 as shown in Figure 1, airport 2, the semiconductor laser 3 that can modulate, Terahertz wave source 4, line defect district input end 5, line defect district output terminal 6, line defect district 7, be provided with line defect district 7 in the middle of on the silicon chip 1, have airport 2 on the silicon chip 1 of online defect area 7 both sides, by silicon chip 1, airport 2, constitute flat panel silicon photonic crystal with line defect district 7, the top of online defect area 7 is provided with the semiconductor laser 3 that can modulate, import by line defect district input end 5 by the THz wave that Terahertz wave source 4 sends, by line defect district 7,6 outputs of warp defect area output terminal.
The refractive index of described silicon chip 1 is 3.4～3.8, silicon wafer thickness 0.4～1.0mm, resistivity 1000～10000 Ω cm of silicon chip.The radius of airport 2 is 40～200 μ m, and the cycle of airport 2 is 80～250 μ m.The width in line defect district 7 is the cycle of 1～5 airport 2.The operation wavelength of the semiconductor laser 3 that can modulate is 680～900nm, power 5～500mW, and modulating speed is 50KHz/s～1GHz/s.Terahertz wave source 1 is backward wave oscillator BWO.
When the semiconductor laser of modulating 3 in the light-operated flat panel silicon photonic crystal THz wave modulator approach does not send laser, constitute flat panel silicon photonic crystal by silicon chip 1, airport 2 and line defect district 7 and have forbidden photon band; When the semiconductor laser 3 that can modulate sent laser radiation to line defect district 7, the refractive index of flat panel silicon photonic crystal changed, and the forbidden photon band of flat panel silicon photonic crystal produces translation, and the edge, forbidden band changes; Utilize the edge, forbidden band of flat panel silicon photonic crystal to modulate THz wave, realize signal loading on THz wave.
The course of work of the present utility model is as follows: the backward wave oscillator BWO that selects the sale of Microtech company is as the Terahertz source, and computer control BWO output THz wave changes in the 0.23-0.375THz frequency range.Choose suitable guided mode (Terahertz frequency) and send continuous THz wave.When the THz wave of this frequency is not sent laser at the semiconductor laser that can modulate, drop on the outside, forbidden band of flat panel silicon photonic crystal, nestle up the forbidden photon band edge, THz wave is with the line defect district of very little loss by flat panel silicon photonic crystal, reach the output terminal output of line defect district, at this moment, the online defect area output terminal of the schottky diode terahertz wave detector of utilizing BWO to carry can detect THz wave; When the semiconductor laser that can modulate sends laser radiation to the line defect district, the refractive index of flat panel silicon photonic crystal changes, the forbidden photon band of flat panel silicon photonic crystal produces translation, the edge, forbidden band changes, the THz wave of this frequency drops on the inside, forbidden band of flat panel silicon photonic crystal, because the forbidden photon band of flat panel silicon photonic crystal is forbidden the transmission of any frequency electromagnetic wave in the flat panel silicon photonic crystal forbidden band, the THz wave of this moment can not be by the line defect district of flat panel silicon photonic crystal, online defect area output terminal does not have THz wave output, at this moment, the online defect area output terminal of the schottky diode terahertz wave detector of utilizing BWO to carry is surveyed less than THz wave.Therefore, the intensity of the online defect area output terminal of THz wave is sent laser and whether is shone the line defect district of flat panel silicon photonic crystal and change along with adding the semiconductor laser that can modulate, thereby has realized signal loading on THz wave.
0.62THz the THz wave of frequency modulation:
The backward wave oscillator BWO that selects Microtech company to sell, wherein the carcinotron model is elected QS1-900ov81 (frequency is tunable in the 0.60-0.90THz frequency range) as, and computer control BWO output wave changes in the 0.60-0.90THz frequency range.The silicon photonic crystal cycles 100 μ m of design, the silicon photonic crystal refractive index is 3.5, silicon wafer thickness 0.5mm, the resistivity 10000 Ω cm of silicon, photonic crystal pore radius 30 μ m, the width in the line defect district of flat panel silicon photonic crystal is the cycle of 3 airports, selecting the THz wave frequency of Terahertz communication usefulness is 0.62THz, semiconductor laser operation wavelength 808nm, power 10mW.When the semiconductor laser that acquisition can be modulated does not send laser, stable state transmission situation such as the accompanying drawing 4 (a) of THz wave in flat panel silicon photonic crystal; When the semiconductor laser that can modulate sends laser radiation to the line defect district, stable state transmission situation such as the accompanying drawing 4 (b) of THz wave in flat panel silicon photonic crystal.The extinction ratio of this terahertz wave modulating device with light control flat panel silicon photonic crystal is 50dB, and modulating speed 1Gb/s, modulation band-width are 1GHz, and the modulator overall dimensions is 3mm.
Claims (5)
1. a terahertz wave modulating device with light control flat panel silicon photonic crystal is characterized in that comprising silicon chip (1), airport (2), the semiconductor laser (3) that can modulate, Terahertz wave source (4), line defect district input end
(5), line defect district output terminal (6), line defect district (7), in the middle of going up, silicon chip (1) is provided with line defect district (7), have airport (2) on the silicon chip (1) of online defect area (7) both sides, by silicon chip (1), airport (2), constitute flat panel silicon photonic crystal with line defect district (7), the top of online defect area (7) is provided with the semiconductor laser (3) that can modulate, import by line defect district input end (5) by the THz wave that Terahertz wave source (4) sends, by line defect district (7), warp defect area output terminal (6) output, described Terahertz wave source (1) is backward wave oscillator BWO.
2. a kind of light-operated flat panel silicon photonic crystal modulator apparatus for terahertz wave according to claim 1, the refractive index that it is characterized in that described silicon chip (1) is 3.4～3.8, silicon wafer thickness 0.4～1.0mm, resistivity 1000～10000 Ω cm of silicon chip.
3. a kind of terahertz wave modulating device with light control flat panel silicon photonic crystal according to claim 1, the radius that it is characterized in that described airport (2) are 40～200 μ m, and the cycle of airport (2) is 80～250 μ m.
4. a kind of terahertz wave modulating device with light control flat panel silicon photonic crystal according to claim 1, the width that it is characterized in that described line defect district (7) are the cycle of 1～5 airport (2).
5. a kind of terahertz wave modulating device with light control flat panel silicon photonic crystal according to claim 1, the operation wavelength that it is characterized in that the described semiconductor laser of modulating (3) is 680～900nm, power 5～500mW, modulating speed is 50KHz/s～1GHz/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201184295U CN201434945Y (en) | 2009-04-23 | 2009-04-23 | Modulation device for optically-controlled flat-plate silicon photonic crystal terahertz wave |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201184295U CN201434945Y (en) | 2009-04-23 | 2009-04-23 | Modulation device for optically-controlled flat-plate silicon photonic crystal terahertz wave |
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| Publication Number | Publication Date |
|---|---|
| CN201434945Y true CN201434945Y (en) | 2010-03-31 |
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| CN2009201184295U Expired - Fee Related CN201434945Y (en) | 2009-04-23 | 2009-04-23 | Modulation device for optically-controlled flat-plate silicon photonic crystal terahertz wave |
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| CN (1) | CN201434945Y (en) |
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2009
- 2009-04-23 CN CN2009201184295U patent/CN201434945Y/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100331 Termination date: 20110423 |