CN201417774Y - Assembly of solar battery and high-quality and density memorizer - Google Patents
Assembly of solar battery and high-quality and density memorizer Download PDFInfo
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- CN201417774Y CN201417774Y CN 200920071044 CN200920071044U CN201417774Y CN 201417774 Y CN201417774 Y CN 201417774Y CN 200920071044 CN200920071044 CN 200920071044 CN 200920071044 U CN200920071044 U CN 200920071044U CN 201417774 Y CN201417774 Y CN 201417774Y
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- solar cell
- substrate
- high energy
- energy density
- density memory
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses an assembly of a solar battery and a high-quality and density memorizer, which comprises the solar battery and the high-quality and density memorizer for allowing the solarbattery to storage electric energy, wherein the high-quality and density memorizer comprises an insulating substrate plated on the back light lateral surface of the solar battery, an underlay and a small groove; a plurality of convex small grooves are formed on the surface of the small groove; and a plurality of electrode layers and a plurality of high dielectric constant dielectric layers respectively arranged between the two adjacent electrode layers at intervals are also arranged on the surface of the underlay. The utility model has the advantages of small volume of the solar battery, convenient transportation and installation and more stable and reliable structure.
Description
Technical field
The utility model relates to the integrated and manufacture method of a kind of solar cell and high energy density memory.
Background technology
At present to store the maximum of usefulness be storage battery to electric energy.The history in existing more than 100 year of the invention of lead acid accumulator, but it utilizes the inverse conversion of chemical energy and electric energy, realizes charging and discharge, and the lead acid accumulator price is lower, but useful life is short, and weight is big, needs often to safeguard.Be that the novel battery of representative is the main force of development energy technology with lithium battery, fuel cell in recent years, but that these batteries exist useful life is short, environment is had shortcomings such as pollution.Except the shortcoming of the harmful aspect of environment, bulky also is one of subject matter of existing of jumbo ultracapacitor, as multilayer ceramic capacitor (MLC) is though technology has many progress at present in recent years, present enough small sizes and the enough big capacitance still can't accomplished satisfies growing electronic circuit high density demand.
Energy accumulator can be used for coming store electrical energy with solar cell is supporting, solar battery apparatus is except solar cell in the prior art, also need to be equipped with in addition energy accumulator and store the electric energy that solar cell transforms, energy accumulator separates with solar cell, such structure has increased the volume of solar battery apparatus, is inconvenient to transport and install; Simultaneously between solar cell and the energy accumulator be connected reliable inadequately.
Summary of the invention
The purpose of this utility model provides the integrated and manufacture method of a kind of solar cell and high energy density memory, it is integrated with solar cell and high energy density memory height, reduced the volume of solar battery apparatus on the one hand, convenient transportation and installation; Combine between solar cell and the energy accumulator closely on the other hand, structure is more solid and reliable.
The technical solution of the utility model is:
A kind of solar cell and high energy density memory integrated, the high energy density memory that comprises solar cell and confession solar cell store electrical energy, described high energy density memory comprises that the dielectric substrate, the described substrate surface that plate the backlight side surface of being located at solar cell are provided with some sulculuses that cave inward, described substrate surface also is provided with some electrode layers and is arranged at intervals at some dielectric layer of high dielectric constant between every adjacent two electrode layers respectively, partially filled in sulculus in corresponding with the sulculus position of described electrode layer and dielectric layer.
The further technical scheme of the utility model is: a kind of solar cell and high energy density memory integrated, the high energy density memory that comprises solar cell and confession solar cell store electrical energy, described high energy density memory comprises the insulation oxide substrate that plates the backlight side surface of being located at solar cell, described substrate surface is provided with some sulculuses that cave inward, described substrate surface also is provided with some electrode layers, and be arranged at intervals at some dielectric layer of high dielectric constant between every adjacent two electrode layers respectively, partially filled in sulculus in corresponding with the sulculus position of described electrode layer and dielectric layer: above-mentioned sulculus can pass through lithography process, the diameter of sulculus can reach about 0.1 micron, spacing between the adjacent sulculus also can be set to 0.1 micron, makes its distribution density at substrate surface can reach more than one hundred million/square centimeter.If the diameter of sulculus more hour, then its distribution density is higher; When the sulculus diameter is big, also can take other method processing sulculuses such as mould, this moment, its distribution density will be lower.The sulculus that distributes of high density has strengthened the surface area of substrate surface like this, makes it to reach the hundred times of original area occupied even thousands of times, thereby makes the memory that forms have the energy memory property of super large density.Above-mentioned electrode layer can be copper, platinum, lead or other metal material, can be the thickness metallic film of 300 Ethylmercurichlorendimides-2000 Ethylmercurichlorendimide only.Above-mentioned dielectric layer can be any high dielectric-constant dielectric that has, and can be the film of thickness 100 Ethylmercurichlorendimides-1000 Ethylmercurichlorendimide.Certainly, if sulculus is bigger, and to the energy memory requirement difference of memory with under needs higher operating voltage and current conditions, also can be as required that electrode layer and dielectric layer are done ground is thicker, the number of plies is a little less.
Described solar cell comprises transparent substrates, is located at transparent in photoconduction electrolemma, electric layer and conducting film backlight on the substrate successively, and the substrate of described high energy density memory is located at a side backlight of conducting film backlight; Described solar cell comprises substrate, is located at conducting film backlight, electric layer and transparent in the photoconduction electrolemma on the substrate successively, and the substrate of described high energy density memory is located at a side backlight of substrate.
According to the size of sulculus and the thin and thick of electrode layer and dielectric layer, the sandwich structure layer of above-mentioned electrode layer/dielectric layer/electrode layer can not wait to several thousand layers from one deck on substrate, and every so adjacent two electrode layers and dielectric layer therebetween form an electric capacity.When above-mentioned sandwich structure layer during greater than one deck, described substrate one end for all even level electrode layers in this end be electrically connected mutually first extreme, the described substrate other end for all odd-level electrode layers in this end be electrically connected mutually second extreme.Like this, just become to be connected in parallel between several electric capacity, increased the capacitance of whole memory.Its mode that is connected in parallel is specially: the end of described first extreme other odd-level electrode layer that removes outermost electrode layer and the dielectric layer adjacent with these odd-level electrode layers all is shorter than substrate, wherein these odd-level electrode layers are coated by its adjacent dielectric layer in the outer end of this end, and it is outer and join with even level electrode layer outer end before and after it that the first extreme even level electrode layer outer end is coated on its inboard dielectric layer; Described second extreme all even level electrode layers and All Media layer all are shorter than the substrate of this end, wherein these even level electrode layer outer ends are coated by its adjacent dielectric layer, and this end odd-level electrode layer outer end is coated on outside its inboard dielectric layer and with its odd-level electrode layer outer end, front and back and joins.Described sulculus is cylindrical or the rectangular cylinder shape, and sulculus becomes array distribution at substrate surface.
Described solar cell is thin-film solar cells, monocrystalline solar cells or polycrystalline solar cell.
The integrated manufacture method of above-mentioned solar cell and high energy density memory may further comprise the steps:
A) at first process solar cell;
B) in backlight side Surface Machining one deck dielectric substrate of solar cell;
C) process the depression sulculus at the lateral surface of dielectric substrate, the processing of sulculus can be taked different processing methods according to varying in size of sulculus, when the diameter of sulculus hour, can process with photoetching process, when the sulculus diameter is big, can adopt the mould method to process;
D) form electrode layer in the surface of substrate and sulculus with sputtering method processing layer of conductive film;
E) special heat treatment method processing one deck high dielectric constant film forms dielectric layer after electrode layer surface is with sputter, PECVD (plasma enhanced CVD) or ALD (ald) and deposit; Process one deck electrode layer in above-mentioned dielectric layer surface with sputtering method again;
F) number of plies according to required processing repeats above-mentioned steps e), when only needing the two-layer electrode layer of processing and one deck dielectric layer, just do not need to have repeated above-mentioned steps again.
Described substrate one end for all even level electrode layers in this end be electrically connected mutually first extreme, the described substrate other end for all odd-level electrode layers in this end be electrically connected mutually second extreme; After the ground floor electrode layer processing of pressing close to substrate is covered on the substrate, again the processing of ground floor dielectric layer is covered in after again the ground floor electrode layer being positioned at the first extreme end and removing on ground floor electrode layer and the exposed substrate, and then again the processing of second layer electrode layer is covered in after this first dielectric layer is positioned at the first extreme end and removes on first dielectric layer and the exposed substrate, wherein first dielectric layer end of getting rid of is shorter than the end that first electrode layer is got rid of; After each odd-level electrode layer except that interior and outermost electrode layer and inboard dielectric layer thereof process, again this odd-level electrode layer and inboard dielectric layer thereof are positioned at the first extreme end removal, again the processing of next dielectric layer is covered in outside this electrode layer and the exposed last even level electrode layer, then this next dielectric layer is covered in next even level electrode layer processing after remove the first extreme end again outside this next dielectric layer and the exposed last even level electrode layer, wherein next dielectric layer end of getting rid of is shorter than the end that this odd-level electrode layer is got rid of; After each even level electrode layer except that outermost electrode layer and inboard dielectric layer thereof process, again this even level electrode layer and inboard dielectric layer thereof are positioned at the second extreme end removal, again the processing of next dielectric layer is covered in outside this electrode layer and the exposed last odd-level electrode layer, next odd-level electrode layer processing is covered in after then this next dielectric layer being positioned at the second extreme end and removing outside this next dielectric layer and the exposed last odd-level electrode layer, wherein next dielectric layer end of getting rid of is shorter than the end that this even level electrode layer is got rid of again.
Above-mentioned coating process can also be covered plate in the contiguous first extreme edge setting of work surface for before processing odd-level electrode layer, processes this odd-level electrode layer then; Then the first extreme plate of covering is outwards moved, cover plate in the contiguous second extreme edge setting of this odd-level electrode layer again, then at processing odd-level dielectric layer; Then the first extreme plate of covering is removed back reprocessing even level electrode layer; Then the second extreme plate of covering is outwards moved, cover plate in the contiguous first extreme edge setting of above-mentioned even level electrode layer again, reprocessing even level dielectric layer.
Described sulculus is cylindrical or the rectangular cylinder shape, and sulculus becomes array distribution at substrate surface.
The utility model advantage is:
1. the utility model is integrated with solar cell and high energy density memory height, the high energy density memory of film like is directly processed on the solar cell that is film like equally, only thickeied the thickness of solar cell a little, substantially additionally do not increase the volume that is used to be provided with energy accumulator, compact conformation, convenient transportation and installation;
2. engage between the utility model solar cell and the energy accumulator closely, energy accumulator does not need extra fixing yet, and structure is more solid and reliable.
3. the utility model energy accumulator is compared with general memory, and it does not contain any environmentally harmful electrolyte, has environmental protection characteristic.
4. the electrical power storage amount of the utility model energy accumulator is several times of equivalents, has increased the electrical power storage amount of solar cell.
5. energy accumulator charging times of the present utility model is more than 1000 times of general rechargeable battery, has increased the life-span of solar cell.
Description of drawings
Fig. 1 to Figure 13 is the manufacturing step schematic diagram of the utility model first specific embodiment;
Figure 14 is the sectional structure schematic diagram of the utility model second specific embodiment.
Wherein: 1 solar cell; 11 substrates; 12 to the photoconduction electrolemma; 13 electric layers; 14 conducting films backlight; 15 cut line groove; 2 high energy density memories; 21 substrates; 22 electrode layers; 23 dielectric layers; 24 sulculuses; 25 first is extreme; 26 second is extreme; 3 photoresists.
Embodiment
Below in conjunction with drawings and Examples the utility model is further described:
First specific embodiment:
As shown in figure 13, a kind of solar cell and high energy density memory integrated, the high energy density memory 2 that comprises thin-film solar cells 1 and confession solar cell 1 store electrical energy, described high energy density memory 2 comprises the insulation oxide substrate 21 that plates the backlight side surface of being located at solar cell 1, described substrate 21 surfaces are provided with some sulculuses that cave inward 24, described substrate 21 surfaces also are provided with some electrode layers 22, and be arranged at intervals at some dielectric layer of high dielectric constant 23 between every adjacent two electrode layers 22 respectively, partially filled in sulculus 24 in corresponding of described electrode layer 22 and dielectric layer 23 with sulculus 24 positions.As shown in Figure 7, described sulculus 24 is a cylinder form, and sulculus 24 becomes array distribution on substrate 21 surfaces.
Described solar cell 1 comprises transparent substrates 11, is located at transparent in photoconduction electrolemma 12, electric layer 13 and conducting film backlight 14 on the substrate 11 successively, and the substrate 21 of described high energy density memory 2 is located at a side backlight of conducting film 14 backlight.During work, solar radiation and sees through that transparency carrier 11 is converted into electric energy by electric layer 13 and by the conducting film transmission and deliver to high energy density memory 2 at last and store on transparency carrier 11.
Described substrate 21 1 ends for all even level electrode layers 22 in this end be electrically connected mutually first extreme 25, described substrate 21 other ends for all odd-level electrode layers 22 in this end be electrically connected mutually second extreme 26.
Described first extreme 5 removes other odd-level electrode layer 2 of outermost electrode layer 2 and the end of the dielectric layer 3 adjacent with these odd-level electrode layers 2 all is shorter than substrate 1, wherein these odd-level electrode layers 2 are coated by its adjacent dielectric layer 3 in the outer end of this end, and it is outer and join with even level electrode layer 2 outer ends before and after it that first extreme 5 even level electrode layer 2 outer ends are coated on its inboard dielectric layer 3; Described second extreme 6 all even level electrode layers 2 and All Media layer 3 all are shorter than the substrate 1 of this end, wherein these even level electrode layer 2 outer ends are coated by its adjacent dielectric layer 3, and these end odd-level electrode layer 2 outer ends are coated on outside its inboard dielectric layer 3 and with its odd-level electrode layer 2 outer ends, front and back and join.
The integrated manufacture method of above-mentioned solar cell and high energy density memory may further comprise the steps:
A) at first on transparent solar base plate 11, make with the method for mask evaporation or sputter transparent in photoconduction electrolemma 12, on photoconduction electrolemma 12, carrying out equidistant film cut-out line then with laser or diamond pen machine, formation cuts line groove 15, the conducting film mutually insulated of feasible 15 both sides that cut line groove, as depicted in figs. 1 and 2;
And then plating semiconductor electric layer 13, and with laser or diamond pen machine electric layer is carried out equidistant film and cut off line, form and cut line groove 15, as shown in Figure 3;
Then plate conducting film 14 backlight again, and with pen machine in to conducting film backlight line, form and cut line groove 15, as shown in Figure 4.To 15 the position, the left and right sides of cutting line groove on photoconduction electrolemma 12, electric layer 13 and the conducting film backlight 14 contiguous be provided with and conducting film on 15 15 the both sides of cutting line groove that lay respectively on the electric layer 13 that cut line groove.Like this, the battery of each unit is connected and is integrated.
B) solar cell 1 conductive layer 14 backlight backlight side Surface Machining one deck dielectric substrate 21, as shown in Figure 5;
C) process depression sulculus 24 at the lateral surface of dielectric substrate 21: as Fig. 6, resist coating 3 in substrate, carry out photoetching and exposure then several miniature sulculuses of density are shifted on photoresists 3; Stripped etching such as use afterwards, miniature like this sulculus 24 just forms on substrate 21, as shown in Figure 7 and Figure 8;
D) as shown in Figure 9, adopt sputtering method that the surface that metal evenly is splashed to entire substrate 21 and sulculus 24 is formed electrode layer 22;
E) as shown in figure 10, with PECVD method or employing sputtering method high dielectric-constant dielectric is deposited on electrode layer 22 and exposed substrate 21 surface formation dielectric layers 23 again; As shown in figure 11, adopt sputtering method that metal evenly is splashed to above-mentioned first dielectric layer 23 surfaces again and form the second electrode lay 22;
F), repeat above-mentioned steps e as Figure 12 and shown in Figure 13), process second dielectric layer 23 and third electrode layer 22.
Wherein the end processing of each electrode layer 22 and dielectric layer 23 contiguous first extreme 25 and second extreme 26 is as follows: before processing odd-level electrode layer 22, cover plate in the edge setting of work surface contiguous first extreme 25, process this odd-level electrode layer 22 then; The plate of following first extreme 25 of covering outwards moves, and covers plate in the edge setting of this odd-level electrode layer 22 contiguous second extreme 26 again, then at processing odd-level dielectric layer 23; Then first extreme 25 the plate of covering is removed back reprocessing even level electrode layer 22; The plate of following second extreme 26 of covering outwards moves, and covers plate in the edge setting of above-mentioned even level electrode layer 22 contiguous first extreme 25 again, reprocessing even level dielectric layer 23.
Second specific embodiment:
As shown in figure 14, the structure of present embodiment high energy density memory 2 is identical with first specific embodiment, and the processing method of entire cell is roughly identical with first specific embodiment, just the thin-film solar cells of present embodiment comprises substrate 11, is located at conducting film backlight 14, electric layer 13 and transparent in photoconduction electrolemma 12 on the substrate 11 successively, and the substrate 21 of described high energy density memory 2 is located at a side backlight of substrate 11.During work, sunlight sees through and transparently to be converted into electric energy to photoconduction electrolemma 12 by electric layer 13, and by conducting film 14 transmission and deliver to high energy density memory 2 at last and store.
In present embodiment the solar cell of two kinds of cited structures; can also be other solar battery structures such as monocrystalline solar cells or polycrystalline solar cell; the structure of its solar cell and manufacture method can be different with present embodiment; as long as but the high energy density memory in the utility model can be integrated in the backlight side of solar cell; can implement, also all in protection range of the present utility model.
The utility model is integrated with solar cell and high energy density memory height, has reduced the volume of solar battery apparatus on the one hand, convenient transportation and installation; Engage between solar cell and the energy accumulator closely on the other hand, structure is more solid and reliable.
Claims (6)
1. solar cell and high energy density memory is integrated, the high energy density memory (2) that comprises solar cell (1) and confession solar cell (1) store electrical energy, it is characterized in that: described high energy density memory (2) comprises the dielectric substrate (21) on the backlight side surface of being located at solar cell (1), described substrate (21) surface is provided with some sulculuses that cave inward (24), described substrate (21) surface also is provided with some electrode layers (22), and be arranged at intervals at some dielectric layer of high dielectric constant (23) between every adjacent two electrode layers (22) respectively, partially filled in sulculus (24) in corresponding of described electrode layer (22) and dielectric layer (23) with sulculus (24) position.
2. solar cell according to claim 1 and high energy density memory integrated, it is characterized in that: described solar cell (1) comprises transparent substrates (11), is located at transparent in photoconduction electrolemma (12), electric layer (13) and conducting film backlight (14) on the substrate (11) successively, and the substrate (21) of described high energy density memory (2) is located at a side backlight of conducting film backlight (14).
3. solar cell according to claim 1 and high energy density memory integrated, it is characterized in that: described solar cell (1) comprises substrate (11), is located at conducting film backlight (14), electric layer (13) and transparent in photoconduction electrolemma (12) on the substrate (11) successively, and the substrate (21) of described high energy density memory (2) is located at a side backlight of substrate (11).
4. solar cell according to claim 1 and high energy density memory integrated, it is characterized in that: described substrate (21) one ends for all even level electrode layers (22) in first extreme (25) that this end is electrically connected mutually, described substrate (21) other end is that all odd-level electrode layers (22) are in second extreme (26) that this end is electrically connected mutually.
5. solar cell according to claim 1 and high energy density memory integrated, it is characterized in that: described substrate (21) is an insulation oxide.
6. solar cell according to claim 1 and the bright density memory of high energy integrated, it is characterized in that: described solar cell (1) is thin-film solar cells, monocrystalline solar cells or polycrystalline solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920071044 CN201417774Y (en) | 2009-04-24 | 2009-04-24 | Assembly of solar battery and high-quality and density memorizer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920071044 CN201417774Y (en) | 2009-04-24 | 2009-04-24 | Assembly of solar battery and high-quality and density memorizer |
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| CN201417774Y true CN201417774Y (en) | 2010-03-03 |
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| CN 200920071044 Expired - Fee Related CN201417774Y (en) | 2009-04-24 | 2009-04-24 | Assembly of solar battery and high-quality and density memorizer |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100303 Termination date: 20120424 |