CN201406468Y - Metallic organic matter chemical gas phase settling device assisting by electromagnetic field - Google Patents
Metallic organic matter chemical gas phase settling device assisting by electromagnetic field Download PDFInfo
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- CN201406468Y CN201406468Y CN2009200722322U CN200920072232U CN201406468Y CN 201406468 Y CN201406468 Y CN 201406468Y CN 2009200722322 U CN2009200722322 U CN 2009200722322U CN 200920072232 U CN200920072232 U CN 200920072232U CN 201406468 Y CN201406468 Y CN 201406468Y
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Abstract
A metallic organic matter chemical gas phase settling device assisting by electromagnetic field comprises a reaction cavity, a spraying port, a backing slide holder, a graphite disk and electrodes, and is characterized in that an upper electrode is added on the spraying port of the metallic organic matter chemical gas phase settling device, a lower electrode is added on the sides or the bottom ofthe graphite disk, and the upper electrode and the lower electrode form a flat capacitor structure, and form an electric field which is vertical to the surface of a backing, and can regulate and control epitaxial film growing polarity of a semi-conductor. The metallic organic matter chemical gas phase settling device assisting by electromagnetic field has the advantages that constant or alternating electrical fields or magnetic fields are used to regulate polarity degree of growing III nitride materials, and simultaneously endows extra energy to doping atoms for obtaining doping III nitride film materials with high carrier concentration. The device of the utility model improves the doping efficiency of III nitride epitaxial materials through introducing electrical fields and magnetic fields, does not pollute samples, has high yield, and can be used in large-scale production.
Description
Technical field
The utility model relates to the metal-organic chemical vapor deposition equipment of semiconductor material preparing technical field, the auxiliary metal-organic chemical vapor deposition equipment of particularly a kind of electromagnetic field.
Background technology
In the last few years, compound semiconductor materials, especially the III-V compound material is subjected to researchist's extensive concern as the novel semiconductor material of development photoelectron and microelectronic device, and there is wide application prospect in civilian and national defense safety field in solid-state illumination, light demonstration, Laser Printing, optical information storage etc.At present, the research of gan and related semiconductor device thereof has obtained very large progress, and for example GaN, InP based light-emitting diode (LED), laser apparatus (LD) etc. have all been realized commercially producing substantially.
The method that is used to prepare the III-V group iii v compound semiconductor material at present has molecular beam epitaxy (MBE), hydride gas-phase epitaxy (HVPE) and metal-organic chemical vapor deposition equipment (MOCVD) etc.The MOCVD technology is owing to have fast growth, epitaxial film component and character controllability are strong, advantages such as volume production ability height and epitaxial wafer planarization are good, become main, the most effective and growing and preparing technology the most widely of III-V group iii v compound semiconductor material and device, be subjected to the extensive attention of semi-conductor industry circle.
In MOCVD growth technique system, gan and relevant III group-III nitride epitaxial film thereof are normally grown along polar axis c axle [0001] direction, this structure can cause very strong spontaneous polarization effect and piezoelectric effect, the built in field that it produced greatly reduces the efficient of electronics and hole-recombination, performance for devices such as hetero junction field effect pipe, quantum well devices and double heterojunction diodes has very big influence, also makes the luminescent spectrum of luminescent device skew occur simultaneously.Existing studies show that is at LiAlO
2M face (non-polar plane) the gan quantum well fluorescence decay time of last growth has reduced an order of magnitude than c face (polar surface), luminescent spectrum can not be offset along with the enhancing of exciting power more yet, therefore reduces the performance that gallium nitride material polarity can effectively improve its photoelectric device.The multicomponent nitride of high alumina and high indium component is owing to have important application prospects in ultraviolet and high brightness green light LED field, become people's research focus, and the strong spontaneous polarization that to limit this material synthetic one of the main reasons at present be c surface gallium nitride material can reduce the synthetic difficulty of high alumina and high indium component multicomponent nitride by multicomponent nitride polarity degree in the modulated growth processes.In addition, nonpolar gallium nitride film also has other some characteristics, for example polarization properties etc.Therefore, success nonpolar or semi-polarity III group-III nitride epitaxial film is prepared as the application potential of giving full play to material possibility is provided.At present, nonpolar gallium nitride material especially the preparation research of m surface gallium nitride material become the whole world the research focus.Development large size, low cost and high performance nonpolar or semi-polarity III hi-nitride semiconductor material become one of important trend of following photoelectric device.
Yet, the cutting of m face and the LiAlO of present conventional preparation method such as high-pressure process, HVPE growth thick film
2On extension etc. have all that substrate dimension is less, price is too expensive, quality of materials is not high, problems such as unstable properties are unfavorable for further developing of nonpolar or devices such as semi-polarity LED, LD.The present invention is by introducing electric field and magnetic field in process of growth, realize nonpolar or semi-polarity epitaxial film growth, eliminate the restriction of spontaneous polarization effect to material preparation and device photoelectric performance, give aluminium or indium additional energy by extra electric field and magnetic field simultaneously, reduce the synthetic difficulty of the multicomponent nitride semiconductor material of high aluminium component and high indium component.
Summary of the invention
The purpose of this utility model is at the deficiency that exists in the prior art, and a kind of auxiliary metal-organic chemical vapor deposition equipment of electromagnetic field that has is provided.The utility model comprises: reaction chamber, mouth spray, spray cooling liquid-inlet, substrate slide holder, graphite plate, graphite plate bolster, electrode, it is characterized in that on the mouth spray of metal-organic chemical vapor deposition equipment, setting up top electrode, set up lower electrode at graphite plate side or base, top electrode and lower electrode constitute the capacity plate antenna structure, form the electric field perpendicular to substrate surface.Equipment of the present utility model has been set up upper and lower electrode, by introduce in process of growth that electric field and magnetic field can effectively be controlled and modulated growth processes in the polarity degree of epitaxial film, obtain nonpolar or semi-polarity III group-III nitride epitaxial film, also can realize simultaneously multicomponent nitride synthetic of high aluminium component and high indium component, and improve the photoelectric properties of device.
The utility model has the advantages that the electric field that utilizes constant or alternation or magnetic field regulates the III group nitride material polarity degree in the growth, give the foreign atom additional energy simultaneously, obtain the doped with II I group-III nitride thin-film material of high carrier concentration.Improve III group-III nitride epitaxial material doping efficiency by introducing electric field and magnetic field, pollution-free to sample, and the yield rate height, can be applicable in the scale operation.
Description of drawings
Fig. 1 structure cross-sectional schematic of the present utility model;
Fig. 2 lower electrode is installed in the structure cross-sectional schematic of graphite plate side;
Fig. 3 lower electrode is installed in the graphite plate side and the structure cross-sectional schematic of high-temperature insulation ring is housed;
Fig. 4 lower electrode is the plan structure synoptic diagram of two semi-rings;
Fig. 5 lower electrode is the plan structure synoptic diagram of three 1/3rd rings.
Among the figure: 10 reaction chambers, 11 carrier gas intake ductings, 12 mouth sprays, 13 top electrodes, 14 spray cooling liquid-inlets, 15 substrate slide holders, 16 graphite plates, 17 graphite plate bolsters, 18 lower electrodes, 19 lower electrodes, 20 high-temperature insulation rings, 21 lower electrodes, 21-1 lower electrode, 21-2 lower electrode, 21-3 lower electrode.
Embodiment
Further specify embodiment of the present utility model below in conjunction with accompanying drawing.
Embodiment one
Referring to Fig. 1, Fig. 2, MOCVD equipment is made up of reaction chamber 10, carrier gas intake ducting 11, mouth spray 12, top electrode 13, spray cooling liquid-inlet 14, substrate slide holder 15, graphite plate 16, graphite plate bolster 17, lower electrode 18 or lower electrode 19.Set up top electrode 13 on the mouth spray of MOCVD equipment, lower electrode of being made by refractory metal materials such as molybdenums 18 or lower electrode 19 are made into side or the base that an annulus or multiturn coil are installed in graphite plate 16, top electrode 13 constitutes the capacity plate antenna structure with lower electrode 18 or lower electrode 19, forms the electric field perpendicular to substrate surface.The nonpolar epitaxy of gallium nitride film of preparation Sapphire Substrate adopts the C surface sapphire substrate, and thickness is 475 microns, and diameter is 2 cun.This substrate is sent into the reaction chamber 10 of MOCVD equipment.Reaction chamber temperature is risen to 900 ℃, substrate surface is carried out desorption handle.Reaction chamber temperature rises to 1050 ℃, growth high-temperature ammonolysis gallium epitaxial thin-film layer, and thickness is 2 microns.In above-mentioned epitaxial process, by MOCVD equipment, epitaxial film is applied highfield, strength of electric field is 100 volts/meter.The waveform of alternating electric field is sine wave or choppy sea or square wave or pulse wave, and the received current source is two-phase alternating current or polyphase alternating current.Growth finishes, and obtains nonpolar epitaxy of gallium nitride film.
Embodiment two
Embodiment two is identical with embodiment one, be not both lower electrode 21 and be made into lower electrode 21-1, the lower electrode 21-2 of two semi-rings around high-temperature insulation ring 20 is installed in graphite plate 16 by refractory metal materials such as molybdenums.Perhaps, lower electrode 21 is made into three 1/3rd annular lower electrode 21-1, lower electrode 21-2, lower electrode 21-3 around the high-temperature insulation ring is installed in graphite plate 16 by refractory metal materials such as molybdenums.Adopt high indium component I n
xGa
1-xThe preparation of N ternary nitride epitaxial film, In grows on above-mentioned epitaxial film
0.5Ga
0.5N film, thickness are 1 micron.In above-mentioned epitaxial process, by MOCVD equipment epitaxial film is applied highfield by of the present utility model simultaneously, strength of electric field is 100 volts/meter.Growth finishes, and obtains high indium component I n
xGa
1-xN ternary nitride epitaxial film is referring to Fig. 3, Fig. 4, Fig. 5.
Claims (5)
1. auxiliary metal-organic chemical vapor deposition equipment of electromagnetic field, comprise: reaction chamber, mouth spray, spray cooling liquid-inlet, substrate slide holder, graphite plate, graphite plate bolster, electrode, it is characterized in that on the mouth spray of metal-organic chemical vapor deposition equipment, setting up top electrode, set up lower electrode at graphite plate side or base, top electrode and lower electrode constitute the capacity plate antenna structure, form the electric field perpendicular to substrate surface.
2. the auxiliary metal-organic chemical vapor deposition equipment of electromagnetic field according to claim 1, it is characterized in that top electrode, lower electrode made by high melting point metal materials, lower electrode is made into side or the base that an annulus or multiturn coil are installed in graphite plate.
3. the auxiliary metal-organic chemical vapor deposition equipment of electromagnetic field according to claim 1 is characterized in that lower electrode is made into two semi-rings around the high-temperature insulation ring is installed in graphite plate.
4. the auxiliary metal-organic chemical vapor deposition equipment of electromagnetic field according to claim 1 is characterized in that lower electrode is made into three 1/3rd annular electrodes around the high-temperature insulation ring is installed in graphite plate.
5. the auxiliary metal-organic chemical vapor deposition equipment of electromagnetic field according to claim 1, the waveform that it is characterized in that electric field are sine wave or choppy sea or square wave or pulse wave, and the received current source is two-phase alternating current or polyphase alternating current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200722322U CN201406468Y (en) | 2009-05-14 | 2009-05-14 | Metallic organic matter chemical gas phase settling device assisting by electromagnetic field |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009200722322U CN201406468Y (en) | 2009-05-14 | 2009-05-14 | Metallic organic matter chemical gas phase settling device assisting by electromagnetic field |
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| CN201406468Y true CN201406468Y (en) | 2010-02-17 |
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| CN2009200722322U Expired - Lifetime CN201406468Y (en) | 2009-05-14 | 2009-05-14 | Metallic organic matter chemical gas phase settling device assisting by electromagnetic field |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102465277A (en) * | 2010-11-04 | 2012-05-23 | 上海蓝光科技有限公司 | Reverse radial MOCVD reactor |
| CN105040107A (en) * | 2015-06-02 | 2015-11-11 | 济南大学 | Additional electrostatic field assisted semiconductor material doping method |
-
2009
- 2009-05-14 CN CN2009200722322U patent/CN201406468Y/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102465277A (en) * | 2010-11-04 | 2012-05-23 | 上海蓝光科技有限公司 | Reverse radial MOCVD reactor |
| CN102465277B (en) * | 2010-11-04 | 2013-11-27 | 上海蓝光科技有限公司 | Reverse radial MOCVD reactor |
| CN105040107A (en) * | 2015-06-02 | 2015-11-11 | 济南大学 | Additional electrostatic field assisted semiconductor material doping method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
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Granted publication date: 20100217 |
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| CX01 | Expiry of patent term |