CN201395646Y

CN201395646Y - Silicon nitride ceramic integral crucible

Info

Publication number: CN201395646Y
Application number: CN2009200687009U
Authority: CN
Inventors: 周宇
Original assignee: Individual
Current assignee: Individual
Priority date: 2009-03-11
Filing date: 2009-03-11
Publication date: 2010-02-03
Anticipated expiration: 2019-03-11

Abstract

A silicon nitride ceramic integral crucible is disclosed, which is integrally formed by high-purity silicon nitride subjected to high temperature sintering or assembled by high-purity silicon nitridesubjected to high temperature sintering. The silicon nitride ceramic integral crucible is formed by the step that high-purity silicon nitride powder is subjected to traditional treatment process, suchas mixed granulation, and then put at the high temperature from 1650 to 1900 DEG C approximately for sintering, resulting in strong thermal shock resistance, great hardness and excellent abrasive resistance, in addition, the crucible is not only free from the reaction with molten silicon, has no pollution to raw material in the production process and guarantees the purity of raw material, but canalso be repeatedly used for a long time in the high temperature above 1400 DEG C to thereby save cost of production.

Description

The whole crucible of silicon nitride ceramics

Technical field

The utility model relates to a kind of crucible, relates in particular to the whole crucible of a kind of silicon nitride ceramics.

Background technology

Purify at polysilicon, generally use the container of quartz crucible in the production process of polycrystalline silicon ingot casting and pulling of silicon single crystal as molten silicon and directional crystallization and ingot casting.Inner wall of quartz crucible constantly is melted the silicon erosion during production, and a large amount of impurity enter the silicon body thereupon, as oxygen, boron, aluminium etc.Thereby have influence on the purification degree and the stability of mixing up silicon single crystal resistivity of silicon single crystal and polysilicon.Though the introduction of high-purity silica pot has reduced the content of impurity, be helpless to reduce oxygen level, this is because oxygen is form with silicon oxide to be dissolved out from high-purity silica pot and molten silicon interface, and enters the silicon body under solid-liquid interface.Along with the integrated level of large-scale integrated circuit improves constantly, require to reduce as far as possible the microdefect of silicon chip surface, and the generation of surperficial microdefect has been separated out direct relation with the oxygen that is dissolved in silicon body the inside from the nearly surface of silicon chip.In addition, because polysilicon is purified and pulling of silicon single crystal need carry out nearly 20 hours at the high temperature more than 1400 degrees centigrade, when waiting the cooling blow-on to take out product, high-purity silica pot is gross distortion, has to do to scrap processing.And very expensive as the high-purity silica pot price of production usefulness, only after using once, just to do to scrap processing, this allows a lot of silicon single crystal and polysilicon enterprise production cost improve greatly.For the purity that guarantees raw material had increased together technology at high-purity silica pot and plumbago crucible surface spraying silicon nitride powder afterwards again, but this kind crucible also can only use once, still can not solve expensive technical problem.

The utility model content

The purpose of this utility model is to provide a kind of whole crucible of silicon nitride ceramics that can avoid polluting silicon single crystal and polycrystalline silicon raw material and can use, save cost repeatedly.

For achieving the above object, the utility model provides a kind of silicon nitride ceramics whole crucible, and this crucible is that high purity silicon nitride is one-body molded through high temperature sintering.

According to the whole crucible of the described silicon nitride ceramics of the utility model preferred embodiment, its bottom of a pan is " U " type.

According to the whole crucible of the described silicon nitride ceramics of the utility model preferred embodiment, its bottom of a pan is flat.

The utility model also provides a kind of silicon nitride ceramics whole crucible, and this crucible is that high purity silicon nitride is pieced together combination forming mutually through high temperature sintering.

The whole silicon nitride that adopts of the utility model forms through high temperature sintering, neither reacts with molten silicon, and is reusable again.Compared with prior art, the utlity model has following advantage:

1, the whole crucible of this silicon nitride ceramics can repeated multiple times use in the high temperature more than 1400 degrees centigrade, has saved production cost greatly.

2, the whole crucible of this silicon nitride ceramics does not react with molten silicon, makes in the polycrystalline silicon raw material purification process not contaminatedly, has guaranteed the purity of raw material.

3, the whole crucible heat-shock resistance of this silicon nitride ceramics is strong, matter is wear-resisting firmly.

Description of drawings

Fig. 1 is the structural representation of the whole crucible of silicon nitride ceramics of the present utility model.

Embodiment

Below in conjunction with accompanying drawing, specify the utility model.

The whole crucible of a kind of silicon nitride ceramics, this crucible be high purity silicon nitride through high temperature sintering one-body molded or high purity silicon nitride piece together combination forming mutually through high temperature sintering, it comprises: the pot limit 1 and the bottom of a pan 2.

In this example, the bottom of a pan 2 can be that " U " type the bottom of a pan can also be flat.In addition, need to prove that the utility model does not limit the concrete shape of the whole crucible of this silicon nitride ceramics; its shape can be circular or oval-shaped, also can be orthogonal, even can be difform; no matter adopt which kind of shape, all within protection domain of the present utility model.

The whole crucible of silicon nitride ceramics of the present utility model is that the high temperature sintering of putting into again about 1650 ℃-1900 ℃ after adopting the high purity silicon nitride powder to handle through traditional batch mixing granulating and forming forms, its heat-shock resistance is strong, matter is wear-resisting firmly, neither react with molten silicon, can contaminated feedstock in the production process, guaranteed the purity of raw material, can in the high temperature more than 1400 degrees centigrade, long-time repeated multiple times use again, save production cost.

More than disclosed only be several specific embodiment of the present utility model, but the utility model is not limited thereto, any those skilled in the art can think variation, all should drop in the protection domain of the present utility model.

Claims

1, the whole crucible of a kind of silicon nitride ceramics is characterized in that described crucible is that high purity silicon nitride is one-body molded through high temperature sintering.

2, the whole crucible of silicon nitride ceramics as claimed in claim 1 is characterized in that its bottom of a pan is " U " type.

3, the whole crucible of silicon nitride ceramics as claimed in claim 1 is characterized in that its bottom of a pan is flat.

4, the whole crucible of a kind of silicon nitride ceramics is characterized in that described crucible is that high purity silicon nitride is pieced together combination forming mutually through high temperature sintering.