CN201393299Y - Double-faced double-purpose silicon microphone with capacitances arranged in L-shape - Google Patents

Double-faced double-purpose silicon microphone with capacitances arranged in L-shape Download PDF

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Publication number
CN201393299Y
CN201393299Y CN200920117096U CN200920117096U CN201393299Y CN 201393299 Y CN201393299 Y CN 201393299Y CN 200920117096 U CN200920117096 U CN 200920117096U CN 200920117096 U CN200920117096 U CN 200920117096U CN 201393299 Y CN201393299 Y CN 201393299Y
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CN
China
Prior art keywords
pcb board
silicon microphone
framework
electric capacity
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200920117096U
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Chinese (zh)
Inventor
冯金奇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZHEJIANG NEW JIALIAN ELECTRONICS CO Ltd
Original Assignee
ZHEJIANG NEW JIALIAN ELECTRONICS CO Ltd
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Priority to CN200920117096U priority Critical patent/CN201393299Y/en
Application granted granted Critical
Publication of CN201393299Y publication Critical patent/CN201393299Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Micromachines (AREA)

Abstract

The utility model relates to a double-faced double-purpose silicon microphone with capacitances arranged in L-shape, which comprises a framework whose upper and lower ends are opened, the upper and the lower ends of the openings are respectively provided with an upper PCB plate and a lower PCB plate in a sealing mode, which forms a containing cavity, and an MEMS wafer, an IC wafer and two capacitances are arranged in the containing cavity, and are installed on the inner surface of the lower PCB plate in a sticking mode. The silicon microphone is characterized in that corresponding circuit structures are distributed on the external surfaces of both the upper PCB plate and the lower PCB plate, a convex block is arranged on the inner wall of the framework, the side surface of the convex block is provided with a metallic layer, the metallic layer is communicated with the corresponding MEMS wafer, the IC wafer and the two capacitances, the metallic layer on the convex block is conducted with upper contacts and lower contacts on the external surfaces of the upper PCB plate and the lower PCB plate, which forms a double-faced electrical connecting path, the two capacitances are arranged in the framework in an L-shape, and sealed annular metallic rings are respectively arranged on the peripheral contacting surfaces between the framework and the upper and the lower PCB plates. The silicon microphone has the advantages of reasonable connection, simple technical processing, convenient manufacturing and use and good performance.

Description

The two-sided double-purpose silicon microphone of the L shaped arrangement of electric capacity
Technical field
The utility model relates to microphone, relates in particular to the two-sided double-purpose silicon microphone of the L shaped arrangement of electric capacity.
Background technology
Power supply and audio frequency output node that common silicon microphone uses all are the pcb board surfaces of guiding to silicon microphone in silicon microphone by wiring, and two capacity arrangement in the silicon microphone become " one " font to arrange.Such complex structure, the poor reliability of connection, manufacturing cost height, and the arrangement of this electric capacity have limited the volume of MEMS wafer, and the performance of silicon microphone, are somewhat dependent upon the volume of MEMS wafer.
The utility model content
The purpose of this utility model provides a kind of two-sided double-purpose silicon microphone of simple in structure, easily manufactured, the L shaped arrangement of electric capacity that connects reliable, function admirable.
In order to reach above-mentioned requirements, the technical solution of the utility model is: it has the framework of both ends open up and down, the two ends up and down of opening have been sealed pcb board and following pcb board respectively, form a ccontaining cavity, include the MEMS wafer in the ccontaining cavity, IC wafer and two electric capacity, and be mounted on down on the inner surface of pcb board, it is characterized in that on the outer surface of last pcb board and following pcb board, all being placed with corresponding circuit structure, be provided with projection at frame inner wall, the side of projection is provided with metal level, metal level and corresponding M EMS wafer, IC wafer and two electric capacity are communicated with, metal level on the projection all with upper contact and lower contact conducting in last pcb board and following pcb board appearance, form the two-sided path that is electrically connected; Described two electric capacity L-shaped layout in framework; Between the peripheral contact-making surface of framework and last pcb board and framework and following pcb board, be respectively equipped with the annular metal circle of sealing.
The two-sided double-purpose silicon microphone of the L shaped arrangement of electric capacity of making according to such scheme, its advantage is that the wiring of electronic component is drawn the path that is formed by the metal level on the frame inner wall projection and finished in this silicon microphone, wiring is close on the framework projection side walls, make and connect reliably, processing and easy to use, the quoit of establishing between the contact-making surface of framework and last pcb board and following pcb board can make whole silicon microphone not be subjected to the interference of external electromagnetic signal.It is more reasonable that the L-shaped cloth postpone of electric capacity makes in the framework, and the MEMS wafer is given in the space of abdicating, and can make the volume of MEMS wafer enough big.Two outer surfaces of last pcb board and following pcb board all have the two-sided function that mounts, and are applicable to the PCB attachment process of different needs.Therefore, this structure have connect reliable, PROCESS FOR TREATMENT is simple, makes and easy to use the advantage that performance is good.
Description of drawings
Fig. 1 is the schematic perspective view behind the two-sided double-purpose silicon microphone broken section of the L shaped arrangement of electric capacity;
Fig. 2 is the schematic perspective view of the two-sided double-purpose silicon microphone of the L shaped arrangement of electric capacity.
Wherein: 1, framework; 2, go up pcb board; 3, following pcb board; 4, ccontaining cavity; 5, MEMS wafer; 6, IC wafer; 7, electric capacity; 8, projection; 9, metal level; 10, conductive layer; 11, upper contact; 12, quoit.
Embodiment
The utility model will be further described below in conjunction with the drawings and specific embodiments.
Fig. 1, Fig. 2 are the structural representations of the two-sided double-purpose silicon microphone of the L shaped arrangement of electric capacity.As seen from the figure, it has the rectangular frame 1 of both ends open up and down, the two ends up and down of opening have been sealed pcb board 2 and following pcb board 3 respectively, form a ccontaining cavity 4, include MEMS wafer 5 in the ccontaining cavity 4, the electric capacity 7 of IC wafer 6 and two L-shaped layouts, and be mounted on down on the inner surface of pcb board 3, on the outer surface of last pcb board 2 and following pcb board 3, all be placed with corresponding circuit structure, be provided with projection 8 at framework 1 inwall, the side of projection 8 is provided with metal level 9, metal level 9 and corresponding M EMS wafer 5, IC wafer 6 and two electric capacity 7 are communicated with, projection 8 is provided with conductive layer 10, the reliability of having strengthened being electrically connected has increased the adaptability of the environmental change of product again, conductive layer 10 with metal level 9 and in the upper contact 11 of last pcb board 2 and following pcb board 3 appearances and lower contact (at the following pcb board 3 of upper contact 11 symmetries in appearance) conducting, forms the two-sided path that is electrically connected again.Between the peripheral contact-making surface of framework 1 and last pcb board 2 and framework 1 and following pcb board 3, be respectively equipped with the annular metal circle 12 of sealing, when this quoit 12 plays the earth connection effect, can play shielding action again, strengthen the anti-High-frequency Interference ability of product, the design of annular metal circle 12 has strengthened sealing and the consistency in the product encapsulation process.Above-mentioned metal level 9 and quoit 12 are metal layer.Described projection 8, metal level 9, upper contact 11 and lower contact have relatively independent two groups, are to be respectively applied for the power supply of MEMS wafer 5, IC wafer 6 and the tie point of audio frequency output.

Claims (5)

1, the two-sided double-purpose silicon microphone of the L shaped arrangement of electric capacity, it has the framework of both ends open up and down, the two ends up and down of opening have been sealed pcb board and following pcb board respectively, form a ccontaining cavity, include the MEMS wafer in the ccontaining cavity, IC wafer and two electric capacity, and be mounted on down on the inner surface of pcb board, it is characterized in that on the outer surface of last pcb board and following pcb board, all being placed with corresponding circuit structure, be provided with projection at frame inner wall, the side of projection is provided with metal level, metal level and corresponding M EMS wafer, IC wafer and two electric capacity are communicated with, metal level on the projection all with upper contact and lower contact conducting in last pcb board and following pcb board appearance, form the two-sided path that is electrically connected; Described two electric capacity L-shaped layout in framework; Between the peripheral contact-making surface of framework and last pcb board and framework and following pcb board, be respectively equipped with the annular metal circle of sealing.
2, the two-sided double-purpose silicon microphone of the L shaped arrangement of electric capacity according to claim 1 is characterized in that being provided with the conductive layer with upper contact and lower contact conducting between projection and following pcb board and last pcb board.
3, the two-sided double-purpose silicon microphone of the L shaped arrangement of electric capacity according to claim 1 is characterized in that described metal level is a metal layer.
4, the two-sided double-purpose silicon microphone of the L shaped arrangement of electric capacity according to claim 1 is characterized in that described quoit is a metal layer.
5, the two-sided double-purpose silicon microphone of the L shaped arrangement of electric capacity according to claim 1 is characterized in that described projection, metal level, upper contact and lower contact have relatively independent two groups.
CN200920117096U 2009-04-09 2009-04-09 Double-faced double-purpose silicon microphone with capacitances arranged in L-shape Expired - Fee Related CN201393299Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200920117096U CN201393299Y (en) 2009-04-09 2009-04-09 Double-faced double-purpose silicon microphone with capacitances arranged in L-shape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200920117096U CN201393299Y (en) 2009-04-09 2009-04-09 Double-faced double-purpose silicon microphone with capacitances arranged in L-shape

Publications (1)

Publication Number Publication Date
CN201393299Y true CN201393299Y (en) 2010-01-27

Family

ID=41600121

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200920117096U Expired - Fee Related CN201393299Y (en) 2009-04-09 2009-04-09 Double-faced double-purpose silicon microphone with capacitances arranged in L-shape

Country Status (1)

Country Link
CN (1) CN201393299Y (en)

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100127

Termination date: 20180409

CF01 Termination of patent right due to non-payment of annual fee