CN201355607Y - Water-cooling three-phase two-electric-level IGBT module unit - Google Patents
Water-cooling three-phase two-electric-level IGBT module unit Download PDFInfo
- Publication number
- CN201355607Y CN201355607Y CNU2008201384884U CN200820138488U CN201355607Y CN 201355607 Y CN201355607 Y CN 201355607Y CN U2008201384884 U CNU2008201384884 U CN U2008201384884U CN 200820138488 U CN200820138488 U CN 200820138488U CN 201355607 Y CN201355607 Y CN 201355607Y
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- igbt module
- modular unit
- bar
- bus
- water
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Abstract
The utility model relates to a module unit, which comprises six IGBT modules (B), wherein the IGBT modules (B) are installed on a metal heat radiator (A), so that a heat interface layer is arranged between the IGBT modules (B) and the heat radiator (A). In order to improve the cooling of the IGBT modules (B), the heat radiator (A) adopts a water cooling way.
Description
Technical field
The utility model relates to Power Electronic Circuit (power electronics circuit), and it is based on water-cooled three-phase two level IGBT modular units.
Background technology
In static converter, water-cooled three-phase two level IGBT modular units usually constitute as small-sized integrated system, to realize high as far as possible performance, increase voltage and switching frequency.
The constituted mode of general module unit is as follows:
-power dissipation element (being generally semiconductor element and resistance) is directly installed on the metal heat sink by (with hot boundary layer (thermal interface layer)).
-power semiconductor is one group, two groups or three pack modules, and its anodal and negative pole are connected with public DC bus.
-semiconductor module connects into can provide three-phase alternating current output.
The gating signal of-semiconductor module is produced by the gate-drive unit, and each semiconductor module is independent or (is generally 2 groups or 6 groups) together.
-semiconductor module is generally insulated gate bipolar transistor IGBT (Insulated GateBipolar Transistor) module.
Regrettably, generally the modular unit on the radiator is not further cooled off.Yet for the modular unit that will obtain enough validity and high life cycle, the cooling semiconductor module is very important.If do not cool off fully, then can cause semiconductor to be damaged or destroy.The reliability of unit that is provided with this semiconductor module is generally very low.
Summary of the invention
Therefore, the utility model purpose is to realize that a kind of IGBT modular unit is to eliminate above deficiency.
Comprise 6 groups of IGBT modules according to modular unit of the present utility model, described IGBT module is installed on the metal heat sink, makes hot boundary layer be between described IGBT module and the described metal heat sink.Adopt water-cooled according to metal heat sink of the present utility model.Its advantage is, by water described radiator is additionally carried out water-cooled, thereby obtains the better cooling to described IGBT module.Cooling by this improvement to described IGBT module has just obtained the higher availability of modular unit and longer life cycle.
Followingly describe preferred embodiment in detail, of the present utility model described and purpose of description, advantage and feature will not be more apparent with reference to accompanying drawing.
Description of drawings
In the accompanying drawings:
Fig. 1 is the exploded view according to an embodiment of modular unit of the present utility model.
Reference numeral and implication thereof in the accompanying drawing are summarized in the list of numerals.Say that in principle same parts adopt same Reference numeral in the accompanying drawing.Described embodiment only represents an example of the utility model theme, does not have any restriction.
List of numerals
The A radiator
B IGBT module
The C bus-bar
C1 DC connector
C2 AC connector
D gate-drive unit
Embodiment
Fig. 1 shows the exploded view according to an embodiment of modular unit of the present utility model.Modular unit among Fig. 1 comprises six groups of IGBT module B, and IGBT module B is installed on the metal heat sink A, thereby makes hot boundary layer be between described IGBT module B and the described radiator A.According to the utility model, described radiator A adopts water-cooled.Its advantage is, by water described radiator is additionally carried out water-cooled, thereby obtains the better cooling to described IGBT module B.Cooling by this improvement to described IGBT module B has just obtained the higher availability of modular unit and longer life cycle.
In addition, described radiator A both sides are provided with water swivel.Described water swivel is self-sealed pipe joint, quickly and easily it is unloaded from the whole unit module at inlet side and outlet side guaranteeing.Described IGBT module B is arranged in triplex row two row or two row, three row.According to Fig. 1, described IGBT module B is arranged to two row, three row, to make full use of described spreader surface and to benefit from best heat radiation.According to described electrical connector C1, C2, the position of described IGBT module B also may be selected to length, the number of plies and the opening number wherein that can reduce bus-bar C.Described modular unit is located on the described IGBT module B described bus-bar C, and therefore the shape of described bus-bar C is essentially rectangle.DC connector C1 is in the long side of described bus-bar C, and AC connector C2 is in another long side of described bus-bar C, and this long side is relative with the long side of the residing described bus-bar C of DC connector C1.This has just guaranteed the succinct mechanical connection of modular unit described in the converter.The low inductivity (inductivity) of described bus-bar C is very important to the good performance of handoffs of realizing described IGBT module, operates thereby allow described modular unit to connect under voltage and the switching frequency at higher DC.Described bus-bar C adopts laminated-type, is made of a positive pole, a negative pole and AC conductor layer of every phase.Described conductor layer is not only flat but also thin, and is parallel to each other to each other, is provided with insulating barrier in addition between them, is electrically connected thereby formed low inductivity between the DC of described IGBT module and described modular unit connector C1, AC connector C2.
Can adopt every phase only to establish an IGBT module and another replaces the simplification device of (form that interchangeable cassette is installed with machinery provides) by diode, form chopper phase (chopper phase), wherein load only is ohmic.And, in this case, each gate-drive unit of the described gate-drive cells D that belongs to described diode is not installed.Generally speaking, the gate-drive cells D that drives described IGBT module B is set directly on the described bus-bar C.Described gate-drive cells D is installed in the top that is positioned at the described laminated-type bus-bar C on the separator (isolation).Each gate-drive unit of described gate-drive cells D directly is arranged on its IGBT module B that is associated, to guarantee short the connection.Printed circuit-board assembly (PCBA) by flexibility connects described IGBT module B guaranteeing low inductance, thereby avoids beat effect (swinging effect) when connecting and closing described IGBT module B.
According to Fig. 1, the plastics protective cover is arranged on the top of described gate-drive cells D, and described plastics protective cover is included as the connecting line of the holding wire of described gate-drive cells D and described gate-drive cells D and the hole of establishing.The purpose that the plastics protective cover is installed is in order to prevent that dust from entering described gate-drive cells D and making it avoid damaging.In addition, the distribution wire for the power supply of gate-drive cells D mechanically is fixed on the described protective cover.
Claims (9)
1. a modular unit comprises six IGBT modules (B), and described IGBT module (B) is installed on the metal heat sink (A), thereby hot boundary layer is between described IGBT module (B) and the described radiator (A), it is characterized in that:
Described radiator (A) is water-cooled.
2. modular unit as claimed in claim 1 is characterized in that:
Described radiator (A) is provided with water swivel in its both sides.
3. modular unit as claimed in claim 1 or 2 is characterized in that:
Described IGBT module (B) is arranged to two row, three row.
4. modular unit as claimed in claim 1 or 2 is characterized in that:
Described IGBT module (B) is set as triplex row two row.
5. modular unit as claimed in claim 1 is characterized in that:
Bus-bar (C) is set on described IGBT module (B), makes the shape of described bus-bar (C) be essentially rectangle.
6. modular unit as claimed in claim 5 is characterized in that:
Long side in described bus-bar (C) is provided with DC connector (C1).
7. modular unit as claimed in claim 6 is characterized in that:
Long side in described bus-bar (C) is provided with AC connector (C2), and this long side is relative with the long side of the residing described bus-bar of DC connector (C1) (C).
8. as each described modular unit among the claim 5-7, it is characterized in that:
A door driver element (D) that is used to drive described IGBT module (B) is directly arranged on the described bus-bar (C).
9. modular unit as claimed in claim 8 is characterized in that:
Top in described gate-drive unit (D) is provided with the plastics protective cover, and described plastics protective cover is included as the electric power connecting line of the holding wire of described gate-drive unit (D) and described gate-drive unit (D) and the hole of establishing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201384884U CN201355607Y (en) | 2008-09-27 | 2008-09-27 | Water-cooling three-phase two-electric-level IGBT module unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201384884U CN201355607Y (en) | 2008-09-27 | 2008-09-27 | Water-cooling three-phase two-electric-level IGBT module unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201355607Y true CN201355607Y (en) | 2009-12-02 |
Family
ID=41411950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008201384884U Expired - Lifetime CN201355607Y (en) | 2008-09-27 | 2008-09-27 | Water-cooling three-phase two-electric-level IGBT module unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201355607Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103916005A (en) * | 2013-01-07 | 2014-07-09 | 永济新时速电机电器有限责任公司 | Voltage reduction chopping power unit and train auxiliary current transformer |
| CN105186889A (en) * | 2015-08-21 | 2015-12-23 | 永济新时速电机电器有限责任公司 | Combination water cooling power apparatus with overvoltage absorption function |
-
2008
- 2008-09-27 CN CNU2008201384884U patent/CN201355607Y/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103916005A (en) * | 2013-01-07 | 2014-07-09 | 永济新时速电机电器有限责任公司 | Voltage reduction chopping power unit and train auxiliary current transformer |
| CN103916005B (en) * | 2013-01-07 | 2016-04-13 | 永济新时速电机电器有限责任公司 | Buck chopper power cell and train AuCT |
| CN105186889A (en) * | 2015-08-21 | 2015-12-23 | 永济新时速电机电器有限责任公司 | Combination water cooling power apparatus with overvoltage absorption function |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20091202 |
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| CX01 | Expiry of patent term |