CN201273880Y - 无损检测激光晶体掺杂浓度的装置 - Google Patents
无损检测激光晶体掺杂浓度的装置 Download PDFInfo
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- CN201273880Y CN201273880Y CNU2008201098878U CN200820109887U CN201273880Y CN 201273880 Y CN201273880 Y CN 201273880Y CN U2008201098878 U CNU2008201098878 U CN U2008201098878U CN 200820109887 U CN200820109887 U CN 200820109887U CN 201273880 Y CN201273880 Y CN 201273880Y
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102262080A (zh) * | 2011-04-22 | 2011-11-30 | 哈尔滨工业大学 | 基于单色连续激光测量固体中稀土离子辐射性质的方法 |
CN102483378A (zh) * | 2009-07-20 | 2012-05-30 | Bt成像股份有限公司 | 半导体材料光致发光测量中掺杂浓度和少数载流子寿命分离 |
CN108375562A (zh) * | 2018-03-14 | 2018-08-07 | 北京普立泰科仪器有限公司 | 一种高检测精度的汞检测仪 |
CN111208089A (zh) * | 2020-01-13 | 2020-05-29 | 中国科学院上海光学精密机械研究所 | 长距离端面粗糙晶体体内缺陷测量装置和方法 |
CN114216869A (zh) * | 2021-10-19 | 2022-03-22 | 华灿光电(浙江)有限公司 | 晶圆掺杂检测系统及检测方法 |
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2008
- 2008-08-22 CN CNU2008201098878U patent/CN201273880Y/zh not_active Expired - Lifetime
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102483378A (zh) * | 2009-07-20 | 2012-05-30 | Bt成像股份有限公司 | 半导体材料光致发光测量中掺杂浓度和少数载流子寿命分离 |
US8742372B2 (en) | 2009-07-20 | 2014-06-03 | Bt Imaging Pty Ltd | Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials |
CN102483378B (zh) * | 2009-07-20 | 2014-06-18 | Bt成像股份有限公司 | 半导体材料光致发光测量中掺杂浓度和少数载流子寿命分离 |
US9157863B2 (en) | 2009-07-20 | 2015-10-13 | Bt Imaging Pty Ltd. | Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials |
CN102262080A (zh) * | 2011-04-22 | 2011-11-30 | 哈尔滨工业大学 | 基于单色连续激光测量固体中稀土离子辐射性质的方法 |
CN102262080B (zh) * | 2011-04-22 | 2012-12-05 | 哈尔滨工业大学 | 基于单色连续激光测量固体中稀土离子辐射性质的方法 |
CN108375562A (zh) * | 2018-03-14 | 2018-08-07 | 北京普立泰科仪器有限公司 | 一种高检测精度的汞检测仪 |
CN111208089A (zh) * | 2020-01-13 | 2020-05-29 | 中国科学院上海光学精密机械研究所 | 长距离端面粗糙晶体体内缺陷测量装置和方法 |
CN111208089B (zh) * | 2020-01-13 | 2020-09-15 | 中国科学院上海光学精密机械研究所 | 长距离端面粗糙晶体体内缺陷测量装置和方法 |
CN114216869A (zh) * | 2021-10-19 | 2022-03-22 | 华灿光电(浙江)有限公司 | 晶圆掺杂检测系统及检测方法 |
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Effective date of registration: 20140722 Address after: 100010, D building, Fuhua building, No. 8 North Main Street, Beijing, Dongcheng District, Chaoyangmen, 14A Patentee after: Beijing Sega law firm Address before: 100094, Haidian District, Yongfeng hi tech industrial base, 3 North Wing Road, modern enterprise accelerator B block, 5 floor, Beijing Patentee before: Optoelectronics Technology Co., Ltd. Of Beijing Zhongshida & Chinese Academy Of |
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