CN201241193Y - Tail gas guide apparatus of silicon crystal growth equipment - Google Patents
Tail gas guide apparatus of silicon crystal growth equipment Download PDFInfo
- Publication number
- CN201241193Y CN201241193Y CNU200820162766XU CN200820162766U CN201241193Y CN 201241193 Y CN201241193 Y CN 201241193Y CN U200820162766X U CNU200820162766X U CN U200820162766XU CN 200820162766 U CN200820162766 U CN 200820162766U CN 201241193 Y CN201241193 Y CN 201241193Y
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- Prior art keywords
- tail gas
- vacuum
- walking apparatus
- inlet end
- silicon crystal
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Abstract
The utility model discloses a Tail gas guiding device for silicon crystal growing equipment, which comprises an inlet end, a vacuum pipeline system connected in parallel with a tail gas outlet of a silicon crystal growing furnace, and a tail gas processing pipeline system, wherein spraying systems are both connected to an outlet end of the vacuum pipeline system and an outlet end of the tail gas processing pipeline system; the vacuum pipeline system sequentially comprises a dust removing cylinder, a vacuum pump and a fume purifier from the inlet end and the outlet end, and the removing cylinder, the vacuum pump and the fume purifier are connected by the pipeline; the tail gas processing pipeline system sequentially comprises a dust remover and a blower from the inlet end to the outlet end. The utility model is mainly used for the reformation of a silicon pulling furnace. The tail gas guiding device can effectively solve the problem of P, Sb and As pollutant discharge in production process and after blowout or blow-on, ensures the safety of equipment and staff, has simple structure, can reduce cooling procedure time and blowout time of the pulling furnace, and is suitable for the current reformation of silicon pulling furnaces.
Description
Technical field
The utility model relates to a kind of tail gas that is used for the silicon crystal growth apparatus and leads walking apparatus, relates in particular to the improvement that a kind of mound krousky legal system is equipped with the equipment of silicon crystal.
Background technology
Silicon crystal is semicon industry and the sun power industry material of normal use.Producing the most frequently used method of this material is mound krousky method (the Czochralski method is called for short C Z method).Be called crystal pulling method or crystal pulling method in the industry again.The equipment that mound krousky legal system is equipped with silicon crystal is called crystal pulling furnace.This equipment is made up of concubine 14, segregaion valve 15, body of heater 6 and seed crystal shift mechanism 16 etc.Wherein concubine 14, segregaion valve 15 and body of heater 6 are installed together successively from top to bottom, and segregaion valve 15 can pass through the separation valve door of switch inside with concubine 14 and body of heater 6 conductings or isolation.Crystal growth is carried out under the low pressure in body of heater 6, induces the back to generate by the melted silicon that seed crystal partly immerses after the fusing.After crystal growth is finished, crystal is risen in the concubine 14 by seed crystal shift mechanism 16.After closing segregaion valve 15, concubine 14 internal gas pressures can return to normal atmosphere by charging into argon gas, open concubine 14 then crystal is taken out.
In the process of growth of silicon single crystal, N type silicon may mix the doping agent of phosphorous (P), antimony (Sb) and/or arsenic (As) element according to its purposes difference.Long-term contact above element (P, Sb, As) and compound thereof are toxic effects to the mankind.In C Z method crystal production process, the process of contact is mainly in blow-on and prepurging.After production is finished, body of heater 6 need be opened the cooling and clear up.Cool off because the inner thermal field of stove is exposed in the air in workshop, the dust that intensive thermal convection meeting will contain a small amount of poisonous doped element is brought air into and is diffused into whole workshop, pollutes.At this situation, there are two kinds to live way commonly used: one, the cooling time before the increase blow-on, but this method can extend the production cycle.Two, after body of heater is opened, above body of heater, install dust hood additional, the hot gas flow that rises is passed through dust hood, discharge the workshop as power with the blower fan in the dust hood.This method needs mechanism that dust hood is placed on the body of heater top, and the layout of operation and equipment is brought difficulty.Simultaneously on effect, also fail to prevent fully the diffusion of toxic dust.
Summary of the invention
The utility model provide a kind of easy to use, simple in structure be used for silicon crystal growth oven tail gas lead walking apparatus.
A kind of tail gas of silicon crystal growth apparatus is led walking apparatus, comprise inlet end vacuum-lines system and the vent gas treatment piping system that inserts the tail gas outlet of silicon crystal growth oven in parallel, the exit end of the exit end of vacuum-lines system and vent gas treatment piping system all inserts sprinkling system;
Described vacuum-lines system comprises dedusting tube, vacuum pump and the cooking fume remover that connects by pipeline successively from inlet end to exit end; Be provided with pipe valve between the inlet end of vacuum-lines system and the outlet of the tail gas of silicon crystal growth oven and be used to isolate body of heater and vacuum-lines system.
Described vent gas treatment piping system comprises fly-ash separator and the blower fan that connects by pipeline successively from inlet end to exit end.Be provided with pipe valve between the inlet end of vent gas treatment piping system and the outlet of the tail gas of silicon crystal growth oven and be used to isolate body of heater and vent gas treatment piping system; Pipeline between this pipe valve and the suction cleaner is provided with sweep-up pipe, and the sweep-up pipe ingress is provided with pipe valve.
If necessary, can be equipped with valve on several sweep-up pipes and the sweep-up pipe.
Described pipe valve can adopt Vacuum ball valve commonly used or the other forms of valve that the vacuum-sealing performance is arranged.
Described dedusting tube is a crystal furnace Steel Vessel commonly used, and the general inner metal filter screen of placing comes dedusting, and container can bear the pressure that inner vacuum produces.
Described cooking fume remover is for removing the cleaner of oil smoke by the high pressure static electricity principle.
In the vacuum-lines system, dedusting tube, vacuum pump and cooking fume remover are connected successively by pipe connecting.Under the drive of vacuum pump, when valve tube road valve open and tail gas pipeline valve closes, tail gas can be discharged to the cooking fume remover exit at last successively by dedusting tube, vacuum pump and cooking fume remover.
Described vent gas treatment piping system is when blower fan is opened, if the vent gas treatment pipe valve is opened and during the vacuum-lines valve closes, when passing through fly-ash separator from body of heater venting port tail gas discharged under the drive of blower fan, dust will be blocked by the filtration unit of fly-ash separator inside.Usually adopt the cloth bag type dust filtering device to be better than other filtration units.When Dust Capacity arrived to a certain degree, grey dedusting can fall by the mode of vibration cloth bag.
Described sprinkling system is made up of the spray column of one or more series/parallels.Sprinkling system is collected the back spray to vacuum-lines system tail gas discharged (being in the cooking fume remover outlet) and vent gas treatment piping system tail gas discharged (being in the blower fan outlet).Spray liquid can be at doping agent (N, P, As) specialized designs, method commonly used has oxidation style (for example adopting KMnO4 solution) and alkali lye absorption method (for example adopting NaOH and/or Ca (OH) 2 solution), and harmless tail gas that at last will be by spraying processing is to airborne release.
The utility model tail gas is led each integral part of walking apparatus, can be as required in each position of pipeline, and the going into of each device, export pipe valve is set.
The tail gas that the utility model is used for silicon crystal growth oven is led walking apparatus can solve the problem that the dust of doped element brings with the thermal convection diffusion effectively when blow-on, the vent gas treatment scheme that has produced when simultaneously this covering device provides vacuum system to bleed, and this two cover system organically combined.Using tail gas provided by the utility model to lead walking apparatus can shorten the production cycle, is guaranteeing the technology that simplifies the operation under personnel health's the prerequisite, and does not need to change the structure of original crystal pulling furnace
Description of drawings
Fig. 1 is that the utility model tail gas is led the walking apparatus structural representation.
Number in the figure is:
1. vent gas treatment pipe valve 2. vacuum-lines valves 3. vacuum-lines systems
4. vent gas treatment piping system 5. sprinkling systems 6. bodies of heater
7. dedusting tube 8. vacuum pumps 9. cooking fume removers
10. fly-ash separator 11. sweep-up pipes 12. blower fans
13. t-joint 14. concubines 15. segregaion valves
16. seed crystal shift mechanism
Embodiment
Referring to Fig. 1, the utility model tail gas is led vent gas treatment piping system 4 and the vacuum-lines system 3 that walking apparatus comprises the inlet end parallel connection.
The inlet of vent gas treatment piping system 4 and vacuum-lines system 3 inserts the tail gas outlet of the body of heater 6 of silicon crystal growth oven by t-joint 13, the outlet of vent gas treatment piping system 4 and vacuum-lines system 3 all inserts sprinkling system 5.
Control respectively for the ease of vent gas treatment piping system 4 and vacuum-lines system 3, be provided with pipe valve 2 between the tail gas outlet of the inlet end of vacuum-lines system 3 and silicon crystal growth oven, the inlet end of vent gas treatment piping system 4 is provided with pipe valve 1 between exporting with the tail gas of silicon crystal growth oven.
Vacuum-lines system 3 comprises dedusting tube 7, vacuum pump 8 and the cooking fume remover 9 that connects by pipeline successively from inlet end to exit end;
Vent gas treatment piping system 4 comprises fly-ash separator 10 and the blower fan 12 that connects by pipeline successively from inlet end to exit end.
In vacuum-lines system 3, dedusting tube (7) is the Steel Vessel of built-in stainless steel filtering net.Dedusting tube 7 is placed on before the vacuum pump 8, and cooking fume remover 9 is placed on after the vacuum pump 8.Vacuum pump is generally slide-valve vacuum pump, also can adopt the vacuum pump of other modes.Cooking fume remover 9 preferential employings by the cleaner of electrostatic absorption principle except that oil smoke, but also can adopt other modes to remove the cleaner of oil smoke.
In vent gas treatment piping system 4, fly-ash separator 10 is placed on the back of sweep-up pipe 11, and blower fan 12 is placed on the back of fly-ash separator 10.Wherein fly-ash separator is preferentially selected fiber bag precipitator for use, also can adopt the fly-ash separator of other modes.
Sprinkling system 5 is made up of the spray column of one or more series/parallels.Spray column adopts water pump spray liquid to be risen to the top and the spray of spray column.In the middle of in tower under the effect of filler, feed dusty gas in the tower from the bottom as far as possible in large area, toxic dust is absorbed in the spray liquid to contact with spray liquid.Spray liquid has sorption to toxic dust, can be at doping agent (N, P, As) specialized designs, method commonly used has oxidation style (for example adopting KMnO4 solution) and alkali absorption method (for example adopting NaOH and/or Ca (OH) 2 solution), and harmless tail gas that at last will be by spraying processing is to airborne release.
It is as follows that the utility model tail gas is led the walking apparatus working process:
When single crystal growing furnace was in running order, body of heater 6 should be in low-pressure state, and vacuum tightness is between 200～2000Pa usually.This vacuum tightness is determined by two parameters.The one, from the argon flow amount of seed crystal shift mechanism 16 importings.The 2nd, the evacuation rate of vacuum pump 8.Can realize the vacuum tightness of certain pressure by two factors more than the balance.For example when the pumping speed of vacuum pump 8 remained unchanged, the raising argon flow amount can change the vacuum tightness in the body of heater 6.At this moment, vacuum-lines valve 2 should be in the state of opening, and vent gas treatment pipe valve 1 should be in closing state.When argon gas by in the body of heater 6 during pyritous crystal growth district, toxic dust can evaporate and be carried in the argon gas, forms poisonous tail gas and enters vacuum-lines system 3.When tail gas process dedusting tube 7, because speed descends suddenly, and under the effect of the metal filter screen in dedusting tube 7, most of dust is got off by lamination.Place the front of vacuum pump 8 to improve the Working environment of vacuum pump greatly in dedusting tube 7.Tail gas when vacuum pump 8 is derived, also is entrained with a spot of vacuum pump oil smoke and a spot of toxic dust in the tail gas.These tail gas are further removed by filtration and electrostatic adhesion in cooking fume remover 9.
After the single crystal growing furnace blowing out, when temperature in the stove drops to below 500 ℃, guarantee simultaneously that in order to accelerate process of cooling the tail gas in the stove does not diffuse into the workshop, need carry out following operation (rather than body of heater directly opened by former way).
One, vacuum-lines valve 2 is closed.
Two, with the method that charges into argon gas or nitrogen furnace pressure and barometric point are balanced each other.
Three, open vent gas treatment pipe valve 1 and blower fan 12, furnace gas is led away, and the cooling body of heater.When ventilation, can import argon gas, nitrogen or air from segregaion valve 15, behind body of heater 6, tail gas stream is crossed vent gas treatment valve 1, finishes dedusting in fly-ash separator 10, enters spray column at last under the drive of blower fan 12.Notice that the valve on the sweep-up pipe 11 this moment should be in closing condition.
Four, body of heater 6 can cool off under the situation of gas forced convection fully very soon, opens body of heater after the cooling.At this moment can not cause the diffusion of the toxic dust that thermal convection causes because of the temperature difference inside and outside the body of heater.
Five, close vent gas treatment pipe valve 1 and vacuum-lines valve 2.Open the valve on the sweep-up pipe 11.Blower fan 12 keeps running status simultaneously.Sweep-up pipe can be used for clearing up and be adsorbed on the intravital toxic dust of stove this moment.Under the situation that sweep-up pipe is not installed, be adsorbed on the intravital dust of stove and clear up also that independent suction cleaner or other modes of available dedicated replace.
Six, after cleaning was finished, inactive blower fan 12 also cut out vent gas treatment pipe valve 1.More than operation can be isolated the vacuum system of vent gas treatment piping system and single crystal growing furnace running, for single crystal growing furnace running is next time prepared.
Claims (9)
1, a kind of tail gas of silicon crystal growth apparatus is led walking apparatus, comprise inlet end vacuum-lines system (3) and the vent gas treatment piping system (4) that inserts the tail gas outlet of silicon crystal growth oven in parallel, the exit end of the exit end of vacuum-lines system (3) and vent gas treatment piping system (4) all inserts sprinkling system (5);
Described vacuum-lines system (3) comprises dedusting tube (7), vacuum pump (8) and the cooking fume remover (9) that connects by pipeline successively from inlet end to exit end;
Described vent gas treatment piping system (4) comprises fly-ash separator (10) and the blower fan (12) that connects by pipeline successively from inlet end to exit end.
2, tail gas as claimed in claim 1 is led walking apparatus, it is characterized in that: be provided with pipe valve (2) between the inlet end of described vacuum-lines system (3) and the outlet of the tail gas of silicon crystal growth oven.
3, tail gas as claimed in claim 1 is led walking apparatus, it is characterized in that: be provided with pipe valve (1) between the inlet end of described vent gas treatment piping system (4) and the outlet of the tail gas of silicon crystal growth oven.
4, tail gas as claimed in claim 3 is led walking apparatus, it is characterized in that: the pipeline between described pipe valve (1) and the suction cleaner (10) is provided with several sweep-up pipes (11).
5, tail gas as claimed in claim 4 is led walking apparatus, it is characterized in that: the ingress of described sweep-up pipe (11) is provided with pipe valve.
6, tail gas as claimed in claim 1 is led walking apparatus, it is characterized in that: described sprinkling system is made up of one or more spray columns by series/parallel.
7, tail gas as claimed in claim 1 is led walking apparatus, it is characterized in that: described dedusting tube (7) is the inner metal vessel of placing metal filter screen.
8, tail gas as claimed in claim 1 is led walking apparatus, it is characterized in that: described cooking fume remover (9) is the electrostatic adhesion cleaner.
9, tail gas as claimed in claim 1 is led walking apparatus, it is characterized in that: described fly-ash separator (10) is a sack cleaner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820162766XU CN201241193Y (en) | 2008-08-13 | 2008-08-13 | Tail gas guide apparatus of silicon crystal growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820162766XU CN201241193Y (en) | 2008-08-13 | 2008-08-13 | Tail gas guide apparatus of silicon crystal growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201241193Y true CN201241193Y (en) | 2009-05-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200820162766XU Expired - Fee Related CN201241193Y (en) | 2008-08-13 | 2008-08-13 | Tail gas guide apparatus of silicon crystal growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201241193Y (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101831689A (en) * | 2010-05-31 | 2010-09-15 | 常州亿晶光电科技有限公司 | Secondary dust exhaust apparatus of primary dust storage tank of crystal pulling furnace |
| CN101831690A (en) * | 2010-05-31 | 2010-09-15 | 常州亿晶光电科技有限公司 | Primary dust suction and storage tank of crystal pulling furnace |
| CN105483819A (en) * | 2016-01-26 | 2016-04-13 | 中山大学 | Convection control device for czochralski method crystal growth and crystal growing furnace |
| CN106669301A (en) * | 2016-09-13 | 2017-05-17 | 沈阳隆基电磁科技股份有限公司 | Vacuum dust removal equipment for single crystal growth furnace |
| CN107208306A (en) * | 2015-02-03 | 2017-09-26 | 胜高股份有限公司 | The cleaning method and its implement and the manufacture method of monocrystalline of single crystal pulling apparatus |
| CN109939974A (en) * | 2017-12-21 | 2019-06-28 | 有研半导体材料有限公司 | It is a kind of for clearing up the device of furnace chamber on single crystal growing furnace drum type brake |
| CN110983430A (en) * | 2019-12-23 | 2020-04-10 | 大同新成新材料股份有限公司 | Growth equipment convenient to regulate and control for monocrystalline silicon and growth method thereof |
| CN111945216A (en) * | 2020-07-16 | 2020-11-17 | 大同新成新材料股份有限公司 | Ultra-high-purity graphite thermal field of semiconductor-grade straight-pull monocrystalline silicon furnace |
-
2008
- 2008-08-13 CN CNU200820162766XU patent/CN201241193Y/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101831689A (en) * | 2010-05-31 | 2010-09-15 | 常州亿晶光电科技有限公司 | Secondary dust exhaust apparatus of primary dust storage tank of crystal pulling furnace |
| CN101831690A (en) * | 2010-05-31 | 2010-09-15 | 常州亿晶光电科技有限公司 | Primary dust suction and storage tank of crystal pulling furnace |
| CN107208306A (en) * | 2015-02-03 | 2017-09-26 | 胜高股份有限公司 | The cleaning method and its implement and the manufacture method of monocrystalline of single crystal pulling apparatus |
| CN105483819A (en) * | 2016-01-26 | 2016-04-13 | 中山大学 | Convection control device for czochralski method crystal growth and crystal growing furnace |
| CN105483819B (en) * | 2016-01-26 | 2017-12-05 | 中山大学 | A kind of controlling convection and crystal growing furnace for method of crystal growth by crystal pulling |
| CN106669301A (en) * | 2016-09-13 | 2017-05-17 | 沈阳隆基电磁科技股份有限公司 | Vacuum dust removal equipment for single crystal growth furnace |
| CN109939974A (en) * | 2017-12-21 | 2019-06-28 | 有研半导体材料有限公司 | It is a kind of for clearing up the device of furnace chamber on single crystal growing furnace drum type brake |
| CN110983430A (en) * | 2019-12-23 | 2020-04-10 | 大同新成新材料股份有限公司 | Growth equipment convenient to regulate and control for monocrystalline silicon and growth method thereof |
| CN111945216A (en) * | 2020-07-16 | 2020-11-17 | 大同新成新材料股份有限公司 | Ultra-high-purity graphite thermal field of semiconductor-grade straight-pull monocrystalline silicon furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090520 Termination date: 20150813 |
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| EXPY | Termination of patent right or utility model |