CN201166633Y - Loading network for measuring electrology of transmission electric mirror base on phase-change material - Google Patents
Loading network for measuring electrology of transmission electric mirror base on phase-change material Download PDFInfo
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- CN201166633Y CN201166633Y CNU2008200786067U CN200820078606U CN201166633Y CN 201166633 Y CN201166633 Y CN 201166633Y CN U2008200786067 U CNU2008200786067 U CN U2008200786067U CN 200820078606 U CN200820078606 U CN 200820078606U CN 201166633 Y CN201166633 Y CN 201166633Y
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- electron microscope
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- transmission electron
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- 239000012782 phase change material Substances 0.000 title claims abstract description 49
- 230000005540 biological transmission Effects 0.000 title claims abstract description 35
- 238000009413 insulation Methods 0.000 claims abstract description 5
- 238000012360 testing method Methods 0.000 claims description 27
- 238000005259 measurement Methods 0.000 claims description 17
- 239000012528 membrane Substances 0.000 claims description 15
- 239000002070 nanowire Substances 0.000 claims description 11
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 230000009466 transformation Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 2
- 239000002077 nanosphere Substances 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 abstract description 17
- 230000008025 crystallization Effects 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 14
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- 239000002086 nanomaterial Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Sampling And Sample Adjustment (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The utility model relates to a sample carrying network of a transmission electron microscope, which belongs to the measuring field of a nanometer material and comprises a supporting part and a circuit part, wherein the supporting part comprises a metallic ring (1), the circuit part comprises two electrodes (2), to-be measured elements and phase-change material amorphous fine films (5), wherein the electrodes (2) are glued with the metallic ring (1) in an insulation mode, the phase-change material amorphous fine films (5) are homogeneously distributed between the two electrodes (2) and are in an amorphous state, and the to-be measured elements are positioned in the phase-change material amorphous fine films (5) or are integrated on one of the electrodes (2). A connecting line of the sample carrying network is characterized by being erasable, higher voltage is applied on both ends of the electrodes, or certain laser pulse irradiation is directly applied to the carrying network, thereby the complete non-crystallization of the phase-change material is realized, the formed current path is eliminated and the selectivity and the repeated erasing and writing performance of the measuring circuit are realized.
Description
Technical field
The utility model relates to a kind of example of transmission electron microscope and carries net, belongs to the nano material fields of measurement.
Background technology
Transmission electron microscope (to call transmission electron microscope or Electronic Speculum in the following text) is modern large-scale instrument, it is the strong instrument of research material microstructure, it is at physics, chemistry, material science, fields such as life science have a wide range of applications, particularly develop nano science and technical field rapidly at present, be one of powerful tool the most, the resolution characteristic of transmission electron microscope has reached 0.2nm at present, near the solid matter atomic distance.Along with MEMS (micro electro mechanical system) (MEMS, micro electromechanical system) and receive Mechatronic Systems (NEMS, nano electromechanical systerm) development, that electric property research shows under electric field action is particularly urgent for the microdevice of single nano-wire or nanoscale, but because single nano-wire or microdevice structure are tiny, be difficult to handle, in transmission electron microscope, how single nano-wire or microdevice sample are fixed and extra electric field, from nanoscale and atom level disclose nano material under External Electrical Field electric property and become the difficult problem of pendulum in face of the researchist in field effect.At present in transmission electron microscope owing to be subjected to sample stage and the extremely limited space of pole shoe, generally be 1-3mm, under atomic scale resolution for the unusual difficulty of the direct measurement of the manipulation of single nano-wire or nano thin-film and mechanical property, the method of having reported in the document that nano wire is carried out electrical measurement mainly is based on focused ion beam FIB (focus iron beam) technology, depositing electrode is measured at the determinand two ends, but in a single day circuit is built, the length of nano wire and electrode position all can not be changed between the electrode, and can not directly observe electricity behavior and the atomic scale changes of microstructure of testing sample under electric field action under transmission electron microscope.
The utility model content
The purpose of this utility model has been to overcome the above-mentioned defective of current measuring methods, and a kind of transmission electron microscope measurement support grid based on phase-change material is provided.In netting this year, because the characteristics of phase-change material, line has erasable characteristics, add high voltage by the electrode two ends, perhaps directly carry out certain laser pulse irradiation to carrying net, make phase change material film decrystallized fully, the current path that has formed is disappeared realized the alternative of metering circuit, can erasable repeatedly property.
To achieve these goals, the utility model has been taked following technical scheme.This device includes support section and circuit part, and described support section includes becket 1, and circuit part includes two electrodes 2, element under test and phase-change material noncrystal membrane 5.Electrode 2 is bonding with becket 1 insulation, and phase-change material noncrystal membrane 5 is evenly distributed between two electrodes 2, and phase-change material noncrystal membrane 5 is an amorphous state, and element under test is arranged in film or is integrated on one of them electrode 2;
Described phase-change material noncrystal membrane 5 becomes the crystal phase mutually from amorphous phase under electron beam or laser irradiation, and can be under high voltage or electric pulse or laser radiation be amorphous from crystalline transformation.
Becket 1 can be for electrical and thermal conductivity be good, the copper ring of easy processing, nickel ring, Jin Huan etc.In order to guarantee that becket 1 is fixed on the sample for use in transmitted electron microscope bar, the external diameter of becket 1 carries the consistent 3mm of being of net with prior art, in order to guarantee that electron beam sees through sample is carried out structure analysis, center drilling, and the thickness of becket 1 is between 0.1mm～0.5mm.
Described two electrodes 2 be width between 1mm～1.5mm, the comb electrode of length between 1.0mm～2.5mm.
The thickness of described phase-change material noncrystal membrane 5 is 10nm～50nm.
Described element under test is the microdevice of nano-scale.
Described microdevice nano wire or nanosphere etc.
The utility model has following advantage:
1) the building of circuit (promptly utilizing electron beam to make the amorphous phase change material crystallization) in the utility model, the loading of voltage all is to carry out in the transmission electron microscope experiment, thereby realized that in transmission electron microscope original position carries out electrical measurement and observation to the to-be-measured cell of nanoscale, a kind of new nano wire or the original position electrical testing method of film are provided, has dependable performance, easy for installation, characteristic of simple structure has been expanded the function of transmission electron microscope.
2) year net physical dimension and the prior art in the utility model carried the net basically identical, can pack into easily in the high-resolution-ration transmission electric-lens, thereby utilize the two specimen holders that incline of existing transmission electron microscope, can realize X, Y both direction wide-angle is verted, and the zone axis from the best when can switch on is in position realized high-resolution imaging.
3) components and parts to be measured have alternative, can carry out electron microscopy observation earlier, from two interelectrode some to-be-measured cells, select any one to-be-measured cell (perhaps several carry out the parallel connection measurement) wherein, utilize electron beam to make this to-be-measured cell with two interelectrode amorphous phase change material film crystallization, crystallization part resistance reduces, thereby during extra electric field, electric field will directly act on selected two ends, unit, promptly realize building of circuit, thereby realized selective measurement.
4) because the characteristics of phase-change material, line has erasable characteristics, add high voltage by the electrode two ends, perhaps directly carry out certain laser pulse irradiation to carrying net, make phase change material film decrystallized fully, the current path that has formed is disappeared realized the alternative of metering circuit, can erasable repeatedly property.
Description of drawings
Fig. 1 transmission electron microscope measurement support grid synoptic diagram
Among the figure: 1, becket, 2, electrode, 3, be positioned on the film but the element under test that do not contact with motor, 4, be integrated in the element under test on the electrode, 5, the phase-change material noncrystal membrane, 6, the crystalline portion of phase-change material noncrystal membrane.
Embodiment
Describe present embodiment in detail below in conjunction with Fig. 1.
Present embodiment includes support section and circuit part, support section is a becket 1, circuit part includes two relative metal electrodes 2 and therebetween element under test 3,4 and phase change material film 5, electrode 2 is bonding with becket 1 ring insulation, phase change material film 5 is an amorphous state, element under test 3 is positioned on the film 5 but does not contact with electrode, and element under test 4 is integrated on one of them electrode.Two cube electrodes 2 are symmetrically distributed in the center of becket 1.
Present embodiment is that two cube electrodes 2 are fixed in insulation on the transmission electron microscope copper ring of common usefulness, layer overlay phase-change material noncrystal membrane 5 between two cube electrodes 2, utilize electron beam can bring out the characteristics of phase-change material crystallization, with the phase-change material crystallization between element under test and two electrodes 2, because the phase-change material resistance after the crystallization reduces greatly, two electrodes and to-be-measured cell conducting, utilize business-like two transmission electron microscope that inclines to power up the sample stage added electric field, make the to-be-measured cell two ends of carrying in the net form electric field, can also measure its electrical properties simultaneously, original position real time record to-be-measured cell is in the structural information and the deformation process of outer field action simultaneously, microcell electric property and micromechanism directly are mapped, disclose nano wire or microdevice electric property and conductive mechanism from the atom level.
To-be-measured cell may be nano wire or microdevice, determines directly to place film or is integrated on a certain electrode according to whether making things convenient for, and can be connected with several element under tests, but not contact between each element under test.When utilizing electron-beam-irradiation induced phase-change material noncrystal membrane crystallization, the electron beam dimensions diameter is 5～10nm, but reason owing to electron scattering, the crystallization regional diameter is at 40～60nm, because phase-change material can be an amorphous by crystalline transformation under the laser pulse of high voltage or certain parameter, after measuring end, phase change material film all can be converted into amorphous, thereby can utilize this character to reselect element under test, build current path, realize the erasable of nanoscale circuit.
Phase-change material is widely different common used material such as the GST (Ge-Sb-Te) of resistance before and after the phase transformation, when crystallization takes place when, relatively low because of two kinds of relatively very big crystallization part resistance of different materials electrical conductivity difference before and after the phase-change material phase transformation, electric current will preferentially pass through the crystallization zone when pressing thereby switch on.In the present embodiment, material and diameter according to the need to-be-measured cell, two electrodes are that the rectangle width is between 0.75mm～1mm, length is between 1.6mm～2.5mm, two interelectrode distances according to but the size of measurement unit slightly increase, phase change material film thickness is 10～50nm, if too thick then be not easy by the e-book induced crystallization.
At first utilize electron beam irradiation can make the characteristics of phase-change material crystallization, use transmission electron beam, form low resistance path the certain regional crystallization of film between electrode and the element under test.
When carrying transmission electron microscope that net is fixed on prior art and power up on the sample stage, rising along with the radio station both end voltage, the voltage that is added on two electrodes raises gradually, because the phase-change material resistance after the crystallization is lower, voltage directly acts on the to-be-measured cell two ends, can measure to-be-measured cell electric property after the energising by outer lead.Can also original position write down the behavior of to-be-measured cell under electric field by the transmission electron microscope imaging system, provide nanoscale element under test voltage-current curve, and disclose the conductive mechanism of to-be-measured cell from microstructure change.
The concrete steps of using the grid of transmission electronic microscope in the present embodiment that element under test is carried out the original position dynamic test are described below:
1) element under test 3 is fixed on the two interelectrode phase-change material noncrystal membranes, is fixed on the sample for use in transmitted electron microscope bar that to switch on, the voltage input end and the measuring junction of two electrodes and specimen holder welded, put into transmission electron microscope carrying a net.
2) element under test of on the transmission electron microscope observation screen, select to need measuring, and bring out by electron beam and to make element under test and two interelectrode amorphous phase change material crystallization.
3) by transmission electron microscope the two energising platform that inclines sample is tilted under the positive tape spool of the easiest observation, to two electrode making alives.
4) rising along with voltage can obtain a series of electric current and voltage data by the voltage and current measurement end.
5) the high-resolution atomic diagram by transmission electron microscope writes down deformation process and the crystalline network situation of change of to-be-measured cell under electric field action as real-time in-situ.
6), can provide nanoscale element under test voltage-current curve and on the atom level, disclose the relation of nano material micromechanism and its conductive mechanism by comparative analysis to the real-time full resolution pricture of element under test current and voltage data and microstructure change before and after the distortion.
7) add high voltage by the electrode two ends, perhaps directly carry out certain laser pulse irradiation, make phase change material film decrystallized fully, the current path that has formed is disappeared, continue to begin to reselect different element under tests and measure from step 1 to carrying net.
The TEM micro grid size of carrying net and using always at present in the present embodiment is suitable, being fixed on the two transmission electron microscopes that incline of prior art products adds on the radio station, be not subjected to the restriction of sample driving element size, put into transmission electron microscope and can realize wide-angle vert (the two warm tables that incline of commercialization at present can reach ± 30 °/± 60 °), make sample can under positive tape spool, realize realizing when the atom level is differentiated the original position power-on servicing of nano material, by image recording system real time record device energising behavior.
Claims (6)
1, net is carried in a kind of transmission electron microscope electrical measurement based on phase-change material, it is characterized in that: include support section and circuit part, described support section includes becket (1), described circuit part includes two electrodes (2), element under test and phase-change material noncrystal membrane (5), electrode (2) is bonding with becket (1) insulation, phase-change material noncrystal membrane (5) is evenly distributed between two electrodes (2), phase change material film (5) is an amorphous state, and element under test is arranged in phase-change material noncrystal membrane (5) or is integrated on one of them electrode (2);
Described phase-change material noncrystal membrane (5) becomes the crystal phase mutually from amorphous phase under electron beam or laser irradiation, and can be under high voltage or electric pulse or laser radiation be amorphous from crystalline transformation.
2, net is carried in a kind of transmission electron microscope electrical measurement based on phase-change material according to claim 1, and it is characterized in that: the thickness of described becket (1) is between 0.1mm～0.5mm.
3, net is carried in a kind of transmission electron microscope electrical measurement based on phase-change material according to claim 1, it is characterized in that: described two electrodes (2) for width between 0.75mm～1mm, the comb electrode of length between 1.6mm～2.5mm.
4, net is carried in a kind of transmission electron microscope electrical measurement based on phase-change material according to claim 1, and it is characterized in that: the thickness of described phase-change material noncrystal membrane (5) is 10nm～50nm.
5, net is carried in a kind of transmission electron microscope electrical measurement based on phase-change material according to claim 1, and it is characterized in that: described element under test is the microdevice of nano-scale.
6, net is carried in a kind of transmission electron microscope electrical measurement based on phase-change material according to claim 5, it is characterized in that: described microdevice nano wire or nanosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200786067U CN201166633Y (en) | 2008-01-18 | 2008-01-18 | Loading network for measuring electrology of transmission electric mirror base on phase-change material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200786067U CN201166633Y (en) | 2008-01-18 | 2008-01-18 | Loading network for measuring electrology of transmission electric mirror base on phase-change material |
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| Publication Number | Publication Date |
|---|---|
| CN201166633Y true CN201166633Y (en) | 2008-12-17 |
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| CNU2008200786067U Expired - Lifetime CN201166633Y (en) | 2008-01-18 | 2008-01-18 | Loading network for measuring electrology of transmission electric mirror base on phase-change material |
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| CN (1) | CN201166633Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103954636A (en) * | 2014-04-10 | 2014-07-30 | 北京工业大学 | Transmission electron microscope film window for in-situ high-resolution observation of electric field induced phase transition process of phase transition material |
| CN114486432A (en) * | 2022-01-21 | 2022-05-13 | 北京大学 | Novel high-flux half-moon-shaped carrier net for freezing double-beam extraction of transmission electron microscope sample |
-
2008
- 2008-01-18 CN CNU2008200786067U patent/CN201166633Y/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103954636A (en) * | 2014-04-10 | 2014-07-30 | 北京工业大学 | Transmission electron microscope film window for in-situ high-resolution observation of electric field induced phase transition process of phase transition material |
| CN114486432A (en) * | 2022-01-21 | 2022-05-13 | 北京大学 | Novel high-flux half-moon-shaped carrier net for freezing double-beam extraction of transmission electron microscope sample |
| CN114486432B (en) * | 2022-01-21 | 2023-09-29 | 北京大学 | Novel high-flux semilunar shaped carrier net for freezing double-beam extraction transmission electron microscope sample |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Effective date of abandoning: 20080118 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |