CN201166323Y - Wide spectrum multi-core grain white LED - Google Patents

Wide spectrum multi-core grain white LED Download PDF

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Publication number
CN201166323Y
CN201166323Y CNU2008200822684U CN200820082268U CN201166323Y CN 201166323 Y CN201166323 Y CN 201166323Y CN U2008200822684 U CNU2008200822684 U CN U2008200822684U CN 200820082268 U CN200820082268 U CN 200820082268U CN 201166323 Y CN201166323 Y CN 201166323Y
Authority
CN
China
Prior art keywords
different
emitting diode
light
wave length
fluorescent material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNU2008200822684U
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Chinese (zh)
Inventor
蒋文霞
吴明番
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Z-Light Optoelectronics Co., Ltd.
Original Assignee
HANGZHOU Z-LIGHT OPTOELECTRONICS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANGZHOU Z-LIGHT OPTOELECTRONICS Co Ltd filed Critical HANGZHOU Z-LIGHT OPTOELECTRONICS Co Ltd
Priority to CNU2008200822684U priority Critical patent/CN201166323Y/en
Application granted granted Critical
Publication of CN201166323Y publication Critical patent/CN201166323Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses an electric light source, in particular to a light-emitting diode with wide spectrum and multi-chip, wherein at least two chips arranged on the same light-emitting diode, the largest wave length difference between different chips is larger than 5 nm, and fluorescent powder with different wave lengths are covered on the different chips, and the wave length of light which is generated by different chips which are covered by different wave length fluorescent power is smaller than 5 nm. The utility model has the advantages that the chips with different wave lengths are applied in the same light-emitting diode, and the spectrum can be widened, which can be used in places with higher requirements of color.

Description

A kind of wide range multicore grain white light-emitting diode
Technical field
The utility model relates to a kind of electric light source, specifically is meant the light emitting diode of a kind of wide range, multicore.
Technical background
Existing multicore grain white light-emitting diode packaged type is that the blue light core grain with same shelves wavelength (wavelength difference is less than 5nm) covers the identical fluorescent material of one deck wavelength on the core grain, the white light-emitting diode colour rendering index that this mode is made lower (Ra<82) can not be used in the place that color is had relatively high expectations.And the crest of prepared light emitting diode is wide inadequately, and use occasion is restricted., then adopt and be packaged into different products respectively greater than 5nm for the wavelength of different core grains.This method is unfavorable for the use of core grain, and the go-no-go workload of increase core grain etc.
The utility model content
The utility model has proposed a kind of new structure at deficiency of the prior art, can effectively realize the effect of wide range.
The utility model is achieved by following technical proposals:
A kind of wide range multicore grain white light-emitting diode is placed two core grains at least on same light emitting diode, the wavelength maximum difference of different core intergranulars is greater than 5nm, and covers the fluorescent material of different wave length on different core grains.
Above-mentioned a kind of wide range multicore grain white light-emitting diode, the fluorescent material of covering different wave length on the described different core grains, the light wavelength that the different core grains of covering different wave length fluorescent material send is less than 5nm.This also is the requirement to the different fluorescent material that cover on the different core grains, only in this way could realize that last sent light wavelength is identical, to people's vision generation homogeneity.As preferably, on different core grains, cover the fluorescent material of different wave length, the light wavelength that the different core grains of covering different wave length fluorescent material send is identical.The spectrum of the light that light emitting diode sends is broadened, and light intensity is strengthened simultaneously.
As preferably, above-mentioned a kind of wide range multicore grain white light-emitting diode, the wavelength maximum difference of different core intergranulars is greater than 8nm.According to the difference of specification requirement, the wavelength maximum difference of above-mentioned different core intergranulars is greater than 10nm.Can make the spectrum of light emitting diode wideer.
Beneficial effect: can make the core grain of different wave length be applied to same light emitting diode, and spectrum broadens, can be used on the place that color is had relatively high expectations.
Description of drawings
Fig. 1 light-emitting diode structure schematic diagram
The core grain of Fig. 2 light emitting diode is arranged schematic diagram
The performance map of the light emitting diode during Figure 34 55nm wavelength
The performance map of the light emitting diode during Figure 44 70nm wavelength
The performance map of the light emitting diode when Figure 54 55nm and 470nm wavelength
1, substrate 2, core grain 3, fluorescent material
The specific embodiment
Embodiment one:
Press the described structure of Fig. 1, many core grains 2 of 455nm wavelength be distributed on the substrate 1, be coated with fluorescent material 3 again, be made into light emitting diode, shown in performance such as Fig. 3, wherein Ra=81.6.
Embodiment two:
Press the method for embodiment one, be distributed on the substrate 1, be coated with fluorescent material 3 again, make light emitting diode with many core grains 2 of 470nm wavelength, shown in performance such as Fig. 4, wherein Ra=70.8.
Embodiment three:
Press the method for embodiment one, many core grains 2 of 455nm and 470nm wavelength be distributed on the substrate, be coated with fluorescent material 3 again, make and send out a river diode, shown in performance such as Fig. 5, wherein Ra=84.5.

Claims (5)

1, a kind of wide range multicore grain white light-emitting diode is characterized in that placing at least two core grains on same light emitting diode, and the wavelength maximum difference of different core intergranulars is greater than 5nm, and covers the fluorescent material of different wave length on different core grains.
2, according to 1 described a kind of wide range multicore grain white light-emitting diode, it is characterized in that on different core grains, covering the fluorescent material of different wave length, the light wavelength that the different core grains of covering different wave length fluorescent material send is less than 5nm.
3, according to 2 described a kind of wide range multicore grain white light-emitting diodes, it is characterized in that on different core grains, covering the fluorescent material of different wave length, the light wavelength that the different core grains of covering different wave length fluorescent material send is identical.
4, according to 1 described a kind of wide range multicore grain white light-emitting diode, the wavelength maximum difference that it is characterized in that different core intergranulars is greater than 8nm.
5, according to 4 described a kind of wide range multicore grain white light-emitting diodes, the wavelength maximum difference that it is characterized in that different core intergranulars is greater than 10nm.
CNU2008200822684U 2008-01-14 2008-01-14 Wide spectrum multi-core grain white LED Expired - Fee Related CN201166323Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2008200822684U CN201166323Y (en) 2008-01-14 2008-01-14 Wide spectrum multi-core grain white LED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2008200822684U CN201166323Y (en) 2008-01-14 2008-01-14 Wide spectrum multi-core grain white LED

Publications (1)

Publication Number Publication Date
CN201166323Y true CN201166323Y (en) 2008-12-17

Family

ID=40191713

Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2008200822684U Expired - Fee Related CN201166323Y (en) 2008-01-14 2008-01-14 Wide spectrum multi-core grain white LED

Country Status (1)

Country Link
CN (1) CN201166323Y (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094263A (en) * 2011-10-28 2013-05-08 鸿富锦精密工业(深圳)有限公司 Light-emitting diode device
WO2017032102A3 (en) * 2015-08-25 2017-10-12 王子欣 Full spectrum light-emitting diode and application thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094263A (en) * 2011-10-28 2013-05-08 鸿富锦精密工业(深圳)有限公司 Light-emitting diode device
WO2017032102A3 (en) * 2015-08-25 2017-10-12 王子欣 Full spectrum light-emitting diode and application thereof

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: ZHEJIANG ZHONGZHOU OPTOELECTRONICS CO., LTD.

Free format text: FORMER NAME: HANGZHOU Z-LIGHT OPTOELECTRONICS CO., LTD.

CP03 Change of name, title or address

Address after: Hangzhou City, Zhejiang province 311100 Chang Road in Yuhang District of Yuhang Economic Development Zone No. 111

Patentee after: Zhejiang Z-Light Optoelectronics Co., Ltd.

Address before: Two, building 531, Baoting industrial A block, No. 310012 staff Road, Hangzhou, Zhejiang, Xihu District

Patentee before: Hangzhou Z-Light Optoelectronics Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081217

Termination date: 20150114

EXPY Termination of patent right or utility model