CN201142651Y - Temperature difference power generation device - Google Patents
Temperature difference power generation device Download PDFInfo
- Publication number
- CN201142651Y CN201142651Y CNU2007201495312U CN200720149531U CN201142651Y CN 201142651 Y CN201142651 Y CN 201142651Y CN U2007201495312 U CNU2007201495312 U CN U2007201495312U CN 200720149531 U CN200720149531 U CN 200720149531U CN 201142651 Y CN201142651 Y CN 201142651Y
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- Prior art keywords
- semiconductor
- temperature
- joint
- type semiconductor
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- 238000010248 power generation Methods 0.000 title abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 230000005611 electricity Effects 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 230000004087 circulation Effects 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000013535 sea water Substances 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000005676 thermoelectric effect Effects 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000001172 regenerating effect Effects 0.000 description 3
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000036642 wellbeing Effects 0.000 description 1
Landscapes
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Abstract
A thermoelectric generation device belongs to the field of power generation devices, and mainly utilizes the principles of the thermoelectric effects of semiconductor PN junctions to produce the practically feasible thermoelectric generation device; a water-source heat pump outputs high-temperature liquid and low-temperature liquid to the outside and provides a thermoelectric power source needed by the thermoelectric generation, a power generation core (7) is composed of the components of the semiconductor PN junctions which are regularly connected together and formed by insulated packaging, an anode and a cathode of an output DC power supply are led out, a high-temperature water tank (3) and a low-temperature water tank (4) are respectively closely affixed at the two side surfaces of the power generation core (7), the high-temperature liquid and the low-temperature liquid from the water-source heat pump are respectively circulated by the high-temperature water tank (3) and the low-temperature water tank (4) via a high-temperature connecting pipe (5) and a low-temperature connecting pipe (6), the output DC power can be directly used or be inverted to the AC power for usage. The thermoelectric generation device has the advantages that the thermoelectric generation device can utilize the low-temperature heat, the overall efficiency is high, the thermoelectric conversion efficiency high, the application range is wide, the movability is strong, and the thermoelectric generation device can particularly take sea water as a water source, thus being conducive to the environment protection, saving resources and having simple structure, easy implementation and long service life.
Description
Technical field
The utility model belongs to the Blast Furnace Top Gas Recovery Turbine Unit (TRT) field, relates to a kind of temperature difference electricity generation device.
Background technology
In the prior art, traditional Blast Furnace Top Gas Recovery Turbine Unit (TRT) is waterpower, thermal power generation and wind power generation plant, and its basic principle all produces alternating current based on the rotor cutting magnetic line of mechanical rotation, the equipment bulky complex, and investment is big; The solar power generation then excellent battery component of light of based semiconductor PN junction principle produces direct current, not only be difficult to be applicable to big load application, and be subjected to climatic effect big, and device itself is generally not removable; Have now in solar powered and the semiconductor cooling device, have " single-stage thermoelectric cooling assembly ", all there are production in Tianjin power supply research institute and China Electronics Technology Group Corporation No.18 Institute, this cooling assembly is based on Peltier (Peltier) effect and manufactures with P, N type semiconductor and to form, promptly with dc powered cooling assembly refrigeration or heat; Peltier effect is based on thermoelectric effect---and being Seebeck (Seebeck) effect, also is the thermo-electric generation principle; Though thermo-electric generation is found already, but rest on the thermoelectric couple for a long time, only as a sensing element measuring temperature, after semiconductor comes out, utilize semiconductor PN joint thermocouple to replace metallic thermocouple, certainty of measurement is greatly improved, then efficient is extremely low but be used to generate electricity, do not have practical value, key is the temperature difference power source problem that can not effectively solve thermo-electric generation; After the sixties in this century heat pump techniques occurs, its output useful work is bigger 5～10 times than input work, especially water resource heat pump, so far be used in the building field as mature technology, water resource heat pump can provide effective temperature difference power source for thermo-electric generation, improve the overall efficiency of thermo-electric generation, manufacture temperature difference electricity generation device and become a reality thereby make, for society provides new regenerative resource.
Summary of the invention
The technical problem that solves:
Provide thermo-electric generation required temperature difference power source with water resource heat pump, utilize semiconductor PN joint thermoelectric effect principle, manufacture temperature difference electricity generation device, for society provides new regenerative resource; It is strong that Blast Furnace Top Gas Recovery Turbine Unit (TRT) adapts to region, weather and mobility, and the scope of application is big; Simple in structure, it is safe to move, and implements easily to manufacture long service life, easy care.
The technical scheme that adopts:
A kind of temperature difference electricity generation device is characterized in that: having can be with liquid heat to high temperature T
1And externally output and can be with liquid cools to low temperature T
2And externally defeated water resource heat pump, and semiconductor PN joint assembly---generating core; The concrete structure of generating core is, connected the semiconductor PN joint combine and formed through insulation encapsulation back by rule, draws the positive and negative electrode in output DC source simultaneously, has interval S between P during each semiconductor PN saves and the N type semiconductor; Being equipped with one respectively on two sides of generating core is close on each side and with each side and carries out effective heat conducting high-temperature water channel and low temperature tank; The high temperature T of water resource heat pump output
1Liquid take over through high temperature, by high-temperature water channel circulation, the low temperature T of water resource heat pump output
2Liquid take over through low temperature, circulate by the low temperature tank.
Beneficial effect:
Can utilize low-temperature heat quantity, and the whole efficiency height, thermoelectric power conversion efficiency height; Use region, weather and mobility strong, the scope of application is big, for society provides regenerative resource, environmental, especially the heat pump that with the seawater is the water source provides thermo-electric generation required temperature difference power source, and not only great favourable operation on the sea economizes on resources, the water at low temperature discharging can also reduce ocean temperature, promotes the well-being of mankind; Simple in structure, operation is safe, implement easily to manufacture long service life, easy care.
Description of drawings
Fig. 1, general structure schematic diagram;
Fig. 2, generating core 7 increase output voltage formula structural representation for the series connection of semiconductor PN joint;
Fig. 3, generating core 7 increase output current formula structural representation for the series connection of semiconductor PN joint annexs connection;
The structural upright schematic diagram of Fig. 4, semiconductor PN joint;
Fig. 5, compression water source heat pump system schematic diagram;
Embodiment
Further explanation in detail in conjunction with the accompanying drawings;
As shown in Figure 1, heat pump of high-temp water source 1 heats water to high temperature T
1, and through high temperature adapter 5, by 3 circulations of the high-temperature water channel on the left surface that is contained in generating core 7, low-temperature water source heat pump 2 will be water-cooled to low temperature T
2, and through low temperature adapter 6, by 4 circulations of the low temperature tank on the right flank that is contained in generating core 7; Two cover water resource heat pumps are connected to external power supply E respectively and use when starting, and generating core 7 normal operation output DCs can be directly or become behind the alternating current watering heat pump by inverter and use and/or externally power and store to accumulator jar 8; High temperature T
1Be 60～100 ℃, low temperature T
2It is 1～3 ℃; Also can externally export high temperature T simultaneously with same set of water resource heat pump
1Liquid and low temperature T
2Liquid; The cell wall that tank is close on the left and right side of generating core 7 should adopt conductive coefficient big, and materials such as corrosion resistant copper, aluminium alloy are manufactured; Described liquid is water, can be underground water, river or seawater.
As shown in Figure 2, generating core 7 increases output voltage formula structure for the series connection of semiconductor PN joint, P, N type semiconductor are spaced in regular turn, each semiconductor PN joint is cascaded in regular turn mutually, P and the interval S between the N type semiconductor in each semiconductor PN joint are 0.5～1.5mm, and the joint 9 in each semiconductor PN joint connects with high tin of electric conductivity or silver soldering and forms; On the left surface of generating core 7 high-temperature water channel 3 is housed, low temperature tank 4 is housed on the right flank; Draw the negative pole in output DC source by the P type semiconductor of the semiconductor PN joint that is positioned at top, draw the positive pole in output DC source by the N type semiconductor of the semiconductor PN joint that is positioned at bottommost.
As shown in Figure 3, generating core 7 increases output current formula structure for the series connection of semiconductor PN joint annexs connection, P, N type semiconductor are spaced in regular turn, each semiconductor PN joint in the same row is cascaded mutually in regular turn and forms a unit, each unit is together parallel with one another, P and the interval S between the N type semiconductor in each semiconductor PN joint are 0.5～1.5mm, and the joint 9 in each semiconductor PN joint connects with high tin of electric conductivity or silver soldering and forms; On the left surface of generating core 7 high-temperature water channel 3 is housed, low temperature tank 4 is housed on the right flank, draw the negative pole in output DC source by the P type semiconductor of the semiconductor PN joint that is positioned at top, draw the positive pole in output DC source by the N type semiconductor of the semiconductor PN joint that is positioned at bottommost.
As shown in Figure 4, the structure of semiconductor PN joint is, for reducing the loss of temperature difference power source, P and N type semiconductor in each semiconductor PN joint, the structure that is the formula of being divided into two respectively, be that P type semiconductor is in the same plane and be that the fritter P type semiconductor of a is formed by spacing by two, have low-resistance gap bridge lead or gap bridge guide plate 15 on the spacing a two fritter P type semiconductors are linked together; N type semiconductor is in the same plane and be that the fritter N type semiconductor of b is formed by spacing by two, have on the spacing b low-resistance stride the bridge lead or stride bridge guide plate 16 two fritter N type semiconductors are linked together; Described spacing a and b are 5～15cm.
As shown in Figure 5, the compression water source heat pump system generally is made up of compressor 10, condenser 11, choke valve 12 and evaporator 13, is filled with specific working medium 14 in the system, and condenser 11 can externally be exported high temperature T
1Liquid, simultaneously evaporator 13 can externally be exported low temperature T
2Liquid, therefore can satisfy the core 7 normal needs to temperature difference power source in service that generate electricity.Absorption in addition water resource heat pump also can satisfy generating core 7 normal needs to temperature difference power source in service." single-stage thermoelectric cooling assembly " of the prior art described in this book back scape technology is exactly in fact with the semiconductor PN of P, N type semiconductor joint assembly, but and is not suitable for thermo-electric generation.
Described Peltier (Peltier) effect is meant in the loop that two kinds of plain conductors are formed and inserts DC power supply that then the temperature of one of them node reduces, and absorbs extraneous heat, and the temperature of another node raises, and emits heat to the external world.
Claims (6)
1, a kind of temperature difference electricity generation device is characterized in that: having can be with liquid heat to high temperature (T
1) and externally output and can be with liquid cools to low temperature (T
2) and externally defeated water resource heat pump, and semiconductor PN joint assembly---generating core;
The concrete structure of generating core is, connected the semiconductor PN joint combine and formed through insulation encapsulation back by rule, draws the positive and negative electrode in output DC source simultaneously, has interval S between P during each semiconductor PN saves and the N type semiconductor; Being equipped with one respectively on two sides of generating core is close on each side and with each side and carries out effective heat conducting high-temperature water channel and low temperature tank; High temperature (the T of water resource heat pump output
1) liquid take over through high temperature, by high-temperature water channel circulation, the low temperature (T of water resource heat pump output
2) liquid take over through low temperature, circulate by the low temperature tank.
2, a kind of temperature difference electricity generation device according to claim 1, it is characterized in that: generating core (7) increases output voltage formula structure for the series connection of semiconductor PN joint, P, N type semiconductor are spaced in regular turn, each semiconductor PN joint is cascaded in regular turn mutually, P and the spacing between the N type semiconductor (S) in each semiconductor PN joint are 0.5～1.5mm, and the joint (9) in each semiconductor PN joint connects with high tin of electric conductivity or silver soldering and forms; On the left surface of generating core (7) high-temperature water channel (3) is housed, low temperature tank (4) is housed on the right flank; Draw the negative pole in output DC source by the P type semiconductor of the semiconductor PN joint that is positioned at top, draw the positive pole in output DC source by the N type semiconductor of the semiconductor PN joint that is positioned at bottommost.
3, a kind of temperature difference electricity generation device according to claim 1, it is characterized in that: generating core (7) increases output current formula structure for the series connection of semiconductor PN joint annexs connection, P, N type semiconductor are spaced in regular turn, each semiconductor PN joint in the same row is cascaded mutually in regular turn and forms a unit, each unit is together parallel with one another, P and the spacing between the N type semiconductor (S) in each semiconductor PN joint are 0.5～1.5mm, and the joint (9) in each semiconductor PN joint connects with high tin of electric conductivity or silver soldering and forms; On the left surface of generating core (7) high-temperature water channel (3) is housed, low temperature tank (4) is housed on the right flank, draw the negative pole in output DC source by the P type semiconductor of the semiconductor PN joint that is positioned at top, draw the positive pole in output DC source by the N type semiconductor of the semiconductor PN joint that is positioned at bottommost.
4, according to claim 1,2 or 3 described a kind of temperature difference electricity generation devices, it is characterized in that: P and N type semiconductor in each semiconductor PN joint, the structure that is the formula of being divided into two respectively, be that P type semiconductor is in the same plane and spacing is arranged is that the fritter P type semiconductor of (a) is formed by two, have low-resistance gap bridge lead on the spacing (a) or gap bridge guide plate 15 links together two fritter P type semiconductors; N type semiconductor is in the same plane and spacing is arranged is that the fritter N type semiconductor of (b) is formed by two, have on the spacing (b) low-resistance stride the bridge lead or stride bridge guide plate 16 two fritter N type semiconductors are linked together; Described spacing (a) and (b) be 5～15cm.
5, according to claim 1,2 or 3 described a kind of temperature difference electricity generation devices, it is characterized in that: high temperature (T
1) be 60～100 ℃, low temperature (T
2) be 1～3 ℃.
6, a kind of temperature difference electricity generation device according to claim 4 is characterized in that: high temperature (T
1) be 60～100 ℃, low temperature (T
2)
-It is 1～3 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201495312U CN201142651Y (en) | 2007-06-08 | 2007-06-08 | Temperature difference power generation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201495312U CN201142651Y (en) | 2007-06-08 | 2007-06-08 | Temperature difference power generation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201142651Y true CN201142651Y (en) | 2008-10-29 |
Family
ID=40070360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007201495312U Expired - Fee Related CN201142651Y (en) | 2007-06-08 | 2007-06-08 | Temperature difference power generation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201142651Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102650555A (en) * | 2011-02-25 | 2012-08-29 | 中国科学院理化技术研究所 | Heating pipe network calorimeter based on thermoelectricity and turbine power generation |
| CN105637661A (en) * | 2013-08-30 | 2016-06-01 | Kelk株式会社 | Thermoelectric power generation module |
| CN107768511A (en) * | 2017-12-07 | 2018-03-06 | 赵建平 | A kind of thermoelectric cooling heat storage and cold accumulation battery |
-
2007
- 2007-06-08 CN CNU2007201495312U patent/CN201142651Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102650555A (en) * | 2011-02-25 | 2012-08-29 | 中国科学院理化技术研究所 | Heating pipe network calorimeter based on thermoelectricity and turbine power generation |
| CN105637661A (en) * | 2013-08-30 | 2016-06-01 | Kelk株式会社 | Thermoelectric power generation module |
| CN105637661B (en) * | 2013-08-30 | 2018-12-21 | Kelk株式会社 | thermoelectric generation module |
| CN107768511A (en) * | 2017-12-07 | 2018-03-06 | 赵建平 | A kind of thermoelectric cooling heat storage and cold accumulation battery |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081029 Termination date: 20100608 |