CN201113944Y - High speed switch tube floating grid driver circuit - Google Patents
High speed switch tube floating grid driver circuit Download PDFInfo
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- CN201113944Y CN201113944Y CNU2007201226392U CN200720122639U CN201113944Y CN 201113944 Y CN201113944 Y CN 201113944Y CN U2007201226392 U CNU2007201226392 U CN U2007201226392U CN 200720122639 U CN200720122639 U CN 200720122639U CN 201113944 Y CN201113944 Y CN 201113944Y
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Abstract
The utility model relates to a high-speed switch tube floating grid drive circuit to solve the technical problems existed in the prior switch tube floating grid drive circuit, such as a limited duty factor and so on. In the utility model, a source of MOSFET or an emitter of IGBT are used as a float-ground, and a drive signal is processed into a drive signal based on the float-ground through a high-speed optical coupling; a floating power supply is provided by a high-frequency transformer which is driven by a switching signal, supplies electricity for a rising edge regulation and a signal amplification circuit via a rectifier-filter circuit, and supplies electricity for an optically coupled circuit via a voltage regulation circuit at the same time. The rising edge regulation and the signal amplification circuit can output a floating drive signal which is based on the float-ground and has an adjustable speed of the rising edge. The utility model implements the floating grid drive circuit which has the duty factor capable of reaching 100 percent for a long time, the rising speed of a drive signal of the switch tube is adjustable inside the drive circuit and a pressure difference between a signal ground and a float ground of the floating grid drive circuit can be increased to 2500V; moreover, the high-speed switch tube floating grid drive circuit has a low cost of circuit, and is convenient for wide application.
Description
Technical field
The utility model relates to drive circuit for high speed switch tube floating grid, more particularly, relates to the drive circuit for high speed switch tube floating grid that uses optocoupler, can be used for fields such as Switching Power Supply, D class audio amplifier.Described switching tube can be MOSFET (mos field effect transistor) or IGBT (igbt).
Background technology
In fields such as Switching Power Supply, D class audio amplifiers, run into the occasion that N-channel MOS FET or IGBT switching tube need floating grid to drive through regular meeting, be that example describes below with MOSFET.Because the source level of these occasions MOSFET is generally a complicated wave form, and the turn-on condition of MOSFET is that a burning voltage is provided between grid and the source electrode, therefore the MOSFET grid of this occasion just needs to realize floating to drive.According to different application scenarios, this driving signal frequency scope can be from approximate direct current until hundreds of KHz, and the change in duty cycle scope is very wide, this makes the big difficult point that the MOSFET floating grid drives becomes circuit design.
One, bootstrap capacitor formula floating grid drive circuit
Existing floating grid drives the most extensive with bootstrap capacitor formula circuit application.Its principle as shown in Figure 1.PowerVCC is the main power source of switching circuit work among the figure, and Vgs is the power supply of gate driving, and its voltage should make the reliable conducting of MOSFET, and voltage range is usually at 10～20V.Q1 and Q2 are main MOSFET, and they provide a high power switch drive signal to load at alternate conduction.SW1 and SW2 are the signal of gate driver circuit.According to the MOSFET turn-on condition, when voltage was Vgs between grid G and the source S, MOSFET got final product conducting.
Among Fig. 1 when the Q2 conducting, Q2 drain D ground connection, this moment Vgs by D1 C1 is charged, make C1 voltage reach the Vgs value.When control logic made the SW1 conducting, the C1 both end voltage was added between G, the S of Q1, makes the Q1 conducting, because C1 voltage can not suddenly change, even this moment, the S terminal voltage of Q1 was elevated to main power voltage PowerVCC, C1 still makes G, the S end of Q1 keep conducting voltage Vgs, keeps the Q1 conducting.When Q1 turn-offs, during conducting, C1's Q2 once more charges once more, the electric charge that loses when replenishing the Q1 conducting.
D2/R1 among the figure and D3/R2 are used to adjust the rising edge slope of driven MOS FET waveform, and when drive signal was high level, R1/R2 was connected in the path, and the effect by the grid capacitance of MOSFET slows down the rate of rise; When drive signal was low level, R1/R2 was made trailing edge keep higher slope by the D2/D3 bypass.This slows down the MOSFET opening speed, to reduce the switching loss of bringing because of the too fast unlatching of MOSFET.
This bootstrap capacitor formula floating grid drive circuit has following shortcoming:
(1). the basic principle of this drive circuit is to drive high-end MOSFET (Q1) with electric capacity C1 charge stored, guarantee that Q1 can conducting must guarantee that the C1 charge energy accesses timely replenishing, show in the circuit to be exactly the necessary alternate conduction of Q1, Q2, and the time of Q2 conducting is enough to satisfy the requirement of C1 charging.Need be 100% occasion and in some PWM (pulse-width modulation) circuit such as D class audio frequency power amplifier, tend to occur duty ratio, such as in the D class audio amplifier, when clipping distortion appearred in output signal, duty ratio can reach 100%, and may continue tens of milliseconds.At this moment the C1 long period can't charge, and its voltage can reduce along with discharge rapidly, continues conducting thereby can't keep Q1.For fear of this problem of generation, the engineer can use the method for restriction maximum duty cycle usually, makes duty ratio be no more than certain value (such as 95%), makes C1 be continued charging.And this way reduces the power source voltage utilance, and the switching loss when having increased maximum duty cycle, causes circuit performance to descend.
(2). often need to slow down the opening speed of MOSFET in actual applications, to reduce switching loss.Common way is grid adding parallel resistor and the diode at MOSFET, as D2/R1 among Fig. 1 and D3/R2, makes the opening speed of MOSFET be slower than closing velocity.And the output rising edge speed of drive circuit itself can not be by its inner adjustment.In a plurality of MOSFET occasion of using in parallel, each MOSFET must have independent opening speed to adjust circuit, has increased the complexity of circuit.
(3). when PowerVcc voltage was very high among Fig. 1, the transistor of diode D1 and formation SW1 can bear very high reverse voltage, and gate driver circuit often requires speed very fast.High withstand voltage and high-speed requirement has proposed very big challenge to conventional semiconductor technology, thereby this class circuit is difficult to be applied in drive circuit and the MOSFET operating voltage difference occasion above 1000V.
(4). scheme shown in Figure 1 all realizes (based on the IR21xx series of IR company) by application-specific integrated circuit (ASIC) usually, and the engineer is made at adjustment circuit according to practical situations than difficult.
Two, pulse transformer manifold type floating grid drive circuit
The gate driver circuit of apply pulse transformer is coupled to the grid of MOSFET to drive signal by transformer, realizes floating driving, and its principle as shown in Figure 2.T1 is high-end MOSFET Q1 gate driving transformer, and the elementary switch by control logic control SW1 of T1 makes the elementary generation alternating voltage of T1, and T1 time level is coupled to this signal rear drive Q1.
Because it is transformer coupled that this drive circuit uses, the operating frequency of gate driving, voltage amplitude and duty ratio all can be subjected to the restriction of transformer magnetic material performance.This makes that its work linear zone is very narrow, can only be applied to characteristic frequency, specific amplitude, the less occasion of change in duty cycle, can't adapt to the requirement of most of floating grid drive circuit.And, in order to adjust the rising edge speed that MOSFET drives, exist and the same shortcoming of bootstrap capacitor formula floating grid drive circuit.
For ease of describing, the front only is that example is illustrated with MOSFET, and in fact also there is same problem in the floating grid drive circuit at IGBT.
The utility model content
At the above-mentioned defective of prior art, the utility model will solve technical problems such as the existing existing duty ratio of switching tube floating grid drive circuit is limited.
The technical scheme that its technical problem that solves the utility model adopts is: construct a kind of drive circuit for high speed switch tube floating grid, comprise switching tube, wherein with the source electrode of described switching tube or emitter as floating ground, also comprise: photoelectric coupled circuit (304) is used for original drive signal (302) is treated to drive signal (F_DRV) based on described floating ground; Rising edge is adjusted and signal amplification circuit (307), and its input is connected with the output of described photoelectric coupled circuit, and output is connected with the grid (G) of described switching tube, is used for described floating ground drive signal is carried out rising edge adjustment and signal amplification circuit processing; Power circuit, being respectively described photoelectric coupled circuit provides first working power (F5V) based on described floating ground, provides second working power (F12V) based on described floating ground for described rising edge adjustment and signal amplification circuit.
In the utility model, the described original drive signal of the positive input termination of described photoelectric coupled circuit, negative input end ground connection, positive output end is exported described floating ground drive signal, and negative output terminal then connects described floating ground; Described floating ground drive signal must connect described first working power (F5V) through pull-up resistor R5
In described rising edge adjustment of the present utility model and signal amplification circuit, described floating ground drive signal connects the base stage of triode Q7 through anti saturation circuit; The collector electrode of described triode Q7 is connected to the base stage of triode Q5, also connects described second working power (F12V) through resistance R 7, and is connected to the base stage of triode Q8 through resistance R 11; The emitter of described triode Q7, triode Q8 collector electrode connect described floating ground; The emitter of described triode Q5 connects triode Q8 emitter, and is connected with the grid (G) of described switching tube through resistance R 9.Wherein, can comprise resistance R 8, capacitor C 2, resistance R 10 in the described anti saturation circuit; The described floating ground of the one termination drive signal of described resistance R 8, the other end connects the base stage of described triode Q7 through described capacitor C 2; Described resistance R 10 is in parallel with described capacitor C 2.Described resistance R 7 is preferably adjustable resistance.
Comprise high frequency transformer (303), current rectifying and wave filtering circuit and voltage stabilizing circuit in the described power circuit of the present utility model; The earth terminal of described current rectifying and wave filtering circuit and voltage stabilizing circuit all connects described floating ground; The termination high-frequency switching signal that described high frequency transformer is elementary, other end ground connection; The input of the described current rectifying and wave filtering circuit of a termination that described high frequency transformer is secondary, the described floating ground of another termination; The output of described current rectifying and wave filtering circuit provides second working power (F12V) for described rising edge adjustment and signal amplification circuit, and is connected with the input of described voltage stabilizing circuit; The output of described voltage stabilizing circuit provides first working power (F5V) for described photoelectric coupled circuit.
Owing to taked technique scheme, the utlity model has following advantage:
(1). realized that a kind of duty ratio can reach 100% floating grid drive circuit for a long time.
(2). realized that the switching tube drive signal rate of climb is adjustable in drive circuit inside.
(3). can so that between the signal ground of floating grid drive circuit and the floating ground pressure reduction bring up to 2500V.
(4). increase circuit design flexibility, avoided selecting the restriction that application-specific integrated circuit (ASIC) brought.
(5). circuit cost is low, is convenient to extensive use.
Description of drawings
The utility model is described in further detail below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the schematic diagram of existing bootstrap capacitor formula floating grid drive circuit;
Fig. 2 is the schematic diagram of existing pulse transformer manifold type floating grid drive circuit;
Fig. 3 is the schematic diagram of the utility model floating grid drive circuit;
Fig. 4 is the circuit diagram of floating grid drive circuit in preferred embodiment of the utility model.
Embodiment
In the following description, still be that example describes with MOSFET.The utility model theory diagram as shown in Figure 3.Its its working principles is, as floating ground, drive signal 302 is treated to drive signal based on described floating ground by high speed photo coupling with the source electrode (S) of MOSFET; The high frequency transformer 303 that is driven by switching signal 301 provides floating power supply, and it with reference to ground equally for this reason floatingly; Floating power supply to rising edge adjustment and signal amplification circuit 307 power supplies, also gives optocoupler 304 power supplies through voltage stabilizing circuit 306 after rectifying and wave-filtering 305 is handled simultaneously.Rising edge adjustment and signal amplification circuit 307 be exportable one based on described floating ground and the whole unsteady drive signal of rising edge adjustable-speed.Each circuit among Fig. 3 in the frame of broken lines all is floating ground with the source S of MOSFET308.
Wherein, optocoupler D can select 6N137 for use, and this is the high speed photo coupling of a 10M speed, and its time-delay and rising, fall time can be satisfied the signal transmission of direct current to 10MHz all less than 50nS.
Rising edge adjustment and signal amplification circuit 307 can be adjusted the rising edge slope, amplify the signal of optocoupler 304 outputs simultaneously, make it reach the requirement of driven MOS FET 308.
As seen from Figure 3, transformer 303 and the optocoupler 304 maximum isolation voltage that can tolerate has determined floatingly the maximum voltage difference that allows with signal input ground.Because the isolation voltage of optocoupler 304 is 2500V, withstand voltagely between the winding of transformer 303 also can reach 2500V, so sort circuit can be applied in the occasion that floatingly is no more than 2500V with the signal ground voltage difference.
Figure 4 shows that the circuit diagram of a preferred embodiment of the utility model, Q6 and Q9 constitute a typical semibridge system switching circuit, and the utility model is used to drive high-end MOSFET pipe Q6.Wherein, the F_GND of each circuit of dotted line right side connection is considered as floating ground, just all is connected with the source S of MOSFET pipe Q6, and its current potential is identical with the source S that is driven MOSFET.Transformer T2 is the small-sized high frequency transformer of manganese-zinc ferrite core, and its elementary and number of secondary turns ratio are 1: 1, and to be a high level be+12V to its elementary 12V_SW signal, and low level is-12V that frequency is the square-wave signal of 30KHz.The secondary of T2 is earth point with F_GND, and it is exported through the D6 rectification, forms the 12V power supply that floats after the C3 filtering, and this unsteady 12V power supply produces the 5V power supply that floats through 7805 integrated regulator U3.
The original drive signal PWM of MOSFET is through resistance R 6 rear drive optocoupler U2, obtains the drive signal F_DRV that reference potential is F_GND at the 6th pin of U2, and resistance R 5 is the signal pull-up resistor for this reason.This signal is through resistance R 8, capacitor C 2, resistance R 10 network rear drive triode Q7.Resistance R 8, capacitor C 2, resistance R 10 networks are the anti saturation circuit of triode Q7, can improve the switching speed of Q7, avoid the Q7 output signal to produce time delay.When F_DRV is high level, the Q7 conducting, the Q8 base stage is pulled down to F_GND through R11, the Q8 conducting, the G_OUT of Q8 emitter is pulled low to F_GND, and Q6 turn-offs; When the F_DRV network was low level, Q7 ended, and the Q5 base stage is drawn on R7, the Q5 conducting, and G_OUT is output as the F12V high level.
Because the grid of MOSFET presents capacitive load, so the size of current of G_OUT network output has just determined the speed of its change in voltage.When F_DRV is a low level, Q7 by the time, Q5 is by drawing the base stage conducting on the R7, its collector current of exporting to G_OUT equals the multiplication factor that base current multiply by Q5.Because the triode multiplication factor is a definite value, that is to say that the size of base current has determined the size of Q5 output current, thereby has determined the rate of climb of G_OUT voltage.And the base current of Q5 size is inversely proportional to R7, therefore by adjusting the rising edge speed that R7 can adjust G_OUT.When the F_DRV network was high level, the Q8 base stage was pulled down to F_GND through R11, and the R11 value is very little, makes the Q8 base current much larger than the Q5 base current, thereby G_OUT is dragged down rapidly, realized being driven the rapid shutoff of MOSFET Q6.
For ease of describing, the front only is that example is illustrated with MOSFET, and in fact aforementioned principles and concrete enforcement circuit can be used for the floating grid drive circuit of IGBT equally.Because IGBT had both had the simple and advantage fast of MOSFET device drive, has bipolar device advantage capacious again, thereby obtained application more and more widely in modern power electronics technology.And IGBT and MOSFET require basic identically for drive circuit, and High Speed I GBT technology is increasingly mature, and this utility model can be applied in the drive circuit of IGBT fully.During concrete enforcement, the grid G of the corresponding MOSFET of the grid G of IGBT, the source S of the corresponding MOSFET of the emitter E of IGBT (or claiming source S), the collector electrode C of IGBT (or steelyard slepsydra utmost point D) is the drain D of corresponding MOSFET then.
Compare with scheme illustrated in figures 1 and 2, the circuit in the present embodiment has the following advantages:
(1). duty ratio can reach 100%;
(2). used optocoupler that voltage is isolated;
(3). the rate of climb of switching tube drive signal is adjustable in drive circuit inside;
(4). optocoupler and drive circuit all adopt unsteady supply power mode;
(5). can adapt to floating ground and signal ground voltage floating grid drive circuit up to 2500V.
Claims (9)
1, a kind of drive circuit for high speed switch tube floating grid comprises switching tube, it is characterized in that, wherein with the source electrode of switching tube or emitter as floating ground, also comprise:
Photoelectric coupled circuit (304) is used for original drive signal (302) is treated to drive signal (F_DRV) based on described floating ground;
Rising edge is adjusted and signal amplification circuit (307), and its input is connected with the output of described photoelectric coupled circuit, and output is connected with the grid (G) of described switching tube, is used for described floating ground drive signal is carried out rising edge adjustment and signal amplification circuit processing;
Power circuit, respectively to the output of described photoelectric coupled circuit based on first working power (F5V) on described floating ground, to described rising edge adjustment and signal amplification circuit output second working power (F12V) based on described floating ground.
2, drive circuit for high speed switch tube floating grid according to claim 1, it is characterized in that the described original drive signal of the positive input termination of described photoelectric coupled circuit, negative input end ground connection, positive output end is exported described floating ground drive signal, and negative output terminal then connects described floating ground.
3, drive circuit for high speed switch tube floating grid according to claim 2 is characterized in that, described floating ground drive signal connects described first working power (F5V) through pull-up resistor R5.
4, drive circuit for high speed switch tube floating grid according to claim 2 is characterized in that, in described rising edge adjustment and signal amplification circuit,
Described floating ground drive signal connects the base stage of triode Q7 through anti saturation circuit;
The collector electrode of described triode Q7 is connected to the base stage of triode Q5, also connects described second working power (F12V) through resistance R 7, and is connected to the base stage of triode Q8 through resistance R 11;
The emitter of described triode Q7, triode Q8 collector electrode connect described floating ground;
The emitter of described triode Q5 connects triode Q8 emitter, and is connected with the grid (G) of described switching tube through resistance R 9.
5, drive circuit for high speed switch tube floating grid according to claim 4 is characterized in that, comprises resistance R 8, capacitor C 2, resistance R 10 in the described anti saturation circuit; The described floating ground of the one termination drive signal of described resistance R 8, the other end connects the base stage of described triode Q7 through described capacitor C 2; Described resistance R 10 is in parallel with described capacitor C 2.
6, drive circuit for high speed switch tube floating grid according to claim 5 is characterized in that, described resistance R 7 is an adjustable resistance.
7, according to each described drive circuit for high speed switch tube floating grid among the claim 1-6, it is characterized in that,
Comprise high frequency transformer (303), current rectifying and wave filtering circuit (305) and voltage stabilizing circuit (306) in the described power circuit;
The earth terminal of described current rectifying and wave filtering circuit and voltage stabilizing circuit all connects described floating ground;
The termination high-frequency switching signal that described high frequency transformer is elementary, other end ground connection;
The input of the described current rectifying and wave filtering circuit of a termination that described high frequency transformer is secondary, the described floating ground of another termination;
The output of described current rectifying and wave filtering circuit is exported second working power (F12V) to described rising edge adjustment and signal amplification circuit, and is connected with the input of described voltage stabilizing circuit;
The output of described voltage stabilizing circuit is exported first working power (F5V) to described photoelectric coupled circuit.
According to each described drive circuit for high speed switch tube floating grid among the claim 1-6, it is characterized in that 8, described switching tube is MOSFET, wherein with the source electrode of MOSFET as floating ground.
According to each described drive circuit for high speed switch tube floating grid among the claim 1-6, it is characterized in that 9, described switching tube is IGBT, wherein with the emitter of IGBT as floating ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201226392U CN201113944Y (en) | 2007-08-31 | 2007-08-31 | High speed switch tube floating grid driver circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201226392U CN201113944Y (en) | 2007-08-31 | 2007-08-31 | High speed switch tube floating grid driver circuit |
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| CN201113944Y true CN201113944Y (en) | 2008-09-10 |
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| CNU2007201226392U Expired - Fee Related CN201113944Y (en) | 2007-08-31 | 2007-08-31 | High speed switch tube floating grid driver circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101378254B (en) * | 2007-08-31 | 2010-11-24 | 深圳市圣美歌科技有限公司 | Drive circuit for high speed switch tube floating grid |
| CN104218943A (en) * | 2014-09-05 | 2014-12-17 | 广东威创视讯科技股份有限公司 | Compensation device and drive device |
| CN106230414A (en) * | 2016-08-29 | 2016-12-14 | 成都信息工程大学 | A kind of MOSFET/IGBT high-speed driving circuit based on linear optical coupling isolation |
| CN111426927A (en) * | 2018-12-24 | 2020-07-17 | 东南大学 | Dynamic electrical stress applying device and testing method for power semiconductor device |
-
2007
- 2007-08-31 CN CNU2007201226392U patent/CN201113944Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101378254B (en) * | 2007-08-31 | 2010-11-24 | 深圳市圣美歌科技有限公司 | Drive circuit for high speed switch tube floating grid |
| CN104218943A (en) * | 2014-09-05 | 2014-12-17 | 广东威创视讯科技股份有限公司 | Compensation device and drive device |
| CN104218943B (en) * | 2014-09-05 | 2018-07-10 | 广东威创视讯科技股份有限公司 | Compensation device and driving device |
| CN106230414A (en) * | 2016-08-29 | 2016-12-14 | 成都信息工程大学 | A kind of MOSFET/IGBT high-speed driving circuit based on linear optical coupling isolation |
| CN111426927A (en) * | 2018-12-24 | 2020-07-17 | 东南大学 | Dynamic electrical stress applying device and testing method for power semiconductor device |
| CN111426927B (en) * | 2018-12-24 | 2022-06-21 | 东南大学 | Dynamic electrical stress applying device and testing method for power semiconductor device |
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| C14 | Grant of patent or utility model | ||
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| C17 | Cessation of patent right | ||
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Granted publication date: 20080910 Termination date: 20120831 |