CN201106064Y - Triode sputtering ion pump structure - Google Patents
Triode sputtering ion pump structure Download PDFInfo
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- CN201106064Y CN201106064Y CNU2007201757207U CN200720175720U CN201106064Y CN 201106064 Y CN201106064 Y CN 201106064Y CN U2007201757207 U CNU2007201757207 U CN U2007201757207U CN 200720175720 U CN200720175720 U CN 200720175720U CN 201106064 Y CN201106064 Y CN 201106064Y
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- negative electrode
- pump
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- cathodes
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Abstract
A three-pole sputter ion pump structure is disclosed, which pertains to the field of vacuum electronic equipment. The three-pole sputtering ion pump structure consists of an anode which is added with positive potentials and positioned at the center of the structure, two grid mesh cathodes which are respectively arranged at the two sides of the structure and added with negative potentials and an ion collector, the outer side of the cathodes of which is provided with zero potentials. The grid mesh cathodes are also engraved with grooves on a grid wire. The three-pole titanium pump with grid mesh and groove-shaped cathodes has higher air pumping speed and higher stability of inert gas than a two-pole titanium pump and improves inner state of vacuum devices.
Description
Technical field
The utility model belongs to the vacuum electronic apparatus field, particularly a kind of triode sputtering ionic pump structure that is used for the electron tube manufacturing processed.
Background technology
In the manufacturing processed of electron tube, for keeping normal various getters and the titanium pump of using of vacuum electron device vacuum necessary degree in storing and working.They not only absorb the residual gas in the electron device, and absorb the gas that component are progressively emitted in the device.Electron tube from the exhaust station under the sealed-off after, will allow titanium pump work, the titanium pump power outlet of special use is inserted each electrode of titanium pump, titanium pump is bled.
The titanium pump majority that uses in electron tube is the diarch sputter ion pump, it is by two negative plates, titanium plate normally, anode with polynuclear plane, two negative plates lay respectively at the anode both sides, the electrode structure of forming pump, the permanent magnet that adds pump case again and add has just been formed titanium pump.Permanent magnet is positioned at the negative electrode outside, and field direction B is parallel with direction of an electric field.Under 1000～2000 Gausses' magnetic induction intensity, add 3～7 Kilovolt Direct Currents between negative electrode and the anode and press the back discharge, can be under the magnetic confinement of electromagnetic field 10
-2Keep discharge below the pressure of handkerchief, this discharge claims Penning discharge.During discharge, electronics is made wheel and is rolled to-and-fro movement in the anode tube, increase the electron motion distance greatly, can guarantee very high ionization efficiency.The ion that gas molecule is ionized the back generation quickens to the titanium negative electrode.Energy of ions is very big, can cause the intensive sputter when impacting negative electrode.The alms bowl atomic deposition that sputters out suffers the less position of ion bombardment at anode tube inwall and negative electrode, and the freezing Tifilm of formation is absorbed reactive gas and metastable rare gas element on anode tube inwall, buries rare gas element at the position that cathode sputtering is inviolent.But the gas molecule that arrives negative electrode with ionic state bombards desorb because of ionic is continuous probably, and is especially true to rare gas element.Thereby the diode sputtering ionic pump is not only very low to the pumping speed of rare gas element, and also demonstrates the pressure pulse of rule at regular intervals, and argon gas is had unstable.Therefore the rare gas element that exists is the principal element that influences diarch plasma sputter ultimate pressure of a pump.Given this, just need to consider a kind of new pump that improves pumping speed and stability.
Summary of the invention
The utility model technical issues that need to address are, at existing diode sputtering ionic pump to the rare gas element pumping speed not high and frequent appearance rule pressure pulse and instability problem, the effect of bleeding of influence performance pump.In order to overcome these defectives, will redesign a kind of pump configuration with the effect of fully bleeding.The purpose of this utility model just provides a kind of triode sputtering ionic pump structure.The of the present utility model appearance is based on following understanding: causing the diode sputtering ionic pump is to be buried in the gas of negative electrode because of ionic bombardment desorb continuously to the not high reason of rare gas element pumping speed.So the key of dealing with problems is that the least possible ionic of avoiding of titanium negative electrode of burying rare gas element is bombarded continuously.The strong sputter that causes at bombardment titanium negative electrode in view of ion non-directional can be made the titanium negative electrode aperture plate form with penetrance.Will cross the titanium negative electrode by some titanium atom that sputters like this, just can make above the titanium atom of crossing the titanium negative electrode is deposited on if add an ion collector, thereby cover the rare gas element molecule that sticks on the collector securely at the skin of negative electrode.This part gas that is adsorbed just can be avoided being subjected to ionic and bombard and desorb continuously, thereby can improve the pumping speed of the pump housing to rare gas element greatly.A kind of sputter ion pump of triple-pole type has just been proposed thus.But,, still can some rare gas element when the ion bombardment negative electrode be buried in the surface of negative electrode even the titanium negative electrode is made the form of aperture plate.This part buried gas just may bombard desorb because of ionic is continuous, thereby reduces the pumping speed of the pump housing.Can adopt the way of on the grid silk of negative electrode, slotting to solve this problem.Behind the cathode grid silk fluting, produce the intensive sputter on the wall of ion oblique fire groove, and the suffered ion bombardment of bottom land is faint,, the rare gas element molecule that sticks to bottom land is buried because of the strong sputter of cell wall deposits.
The technical scheme that the utility model adopted is as follows, a kind of triode sputtering ionic pump structure, it is characterized in that, it by the anode that adds positive potential of a centering, its both sides each by one add the aperture plate shape negative electrode of negative potential, the ion collector that the negative electrode outside is provided with zero potential is formed.Described aperture plate shape negative electrode also is carved with groove on the grid silk.By the method for cutting on the grid silk of titanium negative electrode, solved the rare gas element that is adsorbed on the grid silk because of being subjected to the ionic problem of bombardment desorb continuously.After cutting on the grid silk, the probability that bottom land is bombarded reduces, and the most of bombardment of ion is on cell wall, and rare gas element firmly is adsorbed on bottom land.
Based on above understanding, the structure of above-mentioned this fluting sputter cathode has just been proposed.In the pump housing, use the negative electrode of this structure not only can improve titanium pump, and can avoid because the pressure pulse problem that desorb causes to the rare gas element pumping speed.
Beneficial effect of the present invention is: three utmost point titanium pumps of this band aperture plate and line of rabbet joint shape negative electrode present than two utmost point titanium pumps and have higher pumping speed and to the stability of rare gas element, improved the state of vacuum device inside.
Description of drawings
Fig. 1 is a triode sputtering ionic pump scheme implementation synoptic diagram.
Fig. 2 is the triode sputtering ionic pump mechanism synoptic diagram of bleeding.
Embodiment
With reference to Fig. 1, expression triode sputtering ionic pump scheme implementation synoptic diagram.Among the figure, 1 is the anode that adds positive potential of a centering, and respectively there is an aperture plate shape negative electrode 2 that adds negative potential its both sides, and the negative electrode outside is provided with the ion collector 3 of zero potential.Described aperture plate shape negative electrode also is carved with groove 4 on the grid silk.
With reference to Fig. 2, the expression triode sputtering ionic pump mechanism synoptic diagram of bleeding, the physical process that takes place in the anode tube can resolve into seven steps and launch explanations.
1) A represents under low pressure among the figure, when adding high pressure between negative electrode and anode, causes field emission.
2) B is illustrated under electric field, the action of a magnetic field electronics motion of spinning among the figure.
3) C represents that electronics and gas molecule collision produce positive ion and secondary electron, cause avalanche effect among the figure.
4) D represents positive ion bombardment titanium negative electrode among the figure, and splatter goes out titanium atom and drops on the anode tube, forms freezing Tifilm.
5) E represents that the titanium atom that sputters drops on the ion collector by the grid silk of positive ion bombardment titanium negative electrode among the figure, covers to adhere to superincumbent rare gas element.
6) F represents to produce strong sputter on the cell wall of positive ion bombardment titanium negative electrode among the figure, and the titanium atom that sputters is deposited on the bottom of groove, covers and adheres to superincumbent rare gas element.
7) G represents that reactive gas and freezing Tifilm reaction form compound among the figure, and chemisorption is at anode tube inwall.
Claims (2)
1. a triode sputtering ionic pump structure is characterized in that, it by the anode that adds positive potential of a centering, its both sides each by one add the aperture plate shape negative electrode of negative potential, the ion collector that the negative electrode outside is provided with zero potential is formed.
2. triode sputtering ionic pump structure according to claim 1 is characterized in that, described aperture plate shape negative electrode also is carved with groove on the grid silk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201757207U CN201106064Y (en) | 2007-09-28 | 2007-09-28 | Triode sputtering ion pump structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201757207U CN201106064Y (en) | 2007-09-28 | 2007-09-28 | Triode sputtering ion pump structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201106064Y true CN201106064Y (en) | 2008-08-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007201757207U Expired - Fee Related CN201106064Y (en) | 2007-09-28 | 2007-09-28 | Triode sputtering ion pump structure |
Country Status (1)
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| CN (1) | CN201106064Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9136794B2 (en) | 2011-06-22 | 2015-09-15 | Research Triangle Institute, International | Bipolar microelectronic device |
| CN108194314A (en) * | 2017-12-31 | 2018-06-22 | 中国电子科技集团公司第十二研究所 | Gas trapping type vacuum pump and preparation method thereof and application method |
| CN108475613A (en) * | 2016-02-19 | 2018-08-31 | 工程吸气公司 | The non-porous cathode of sintering and the sputter ion pump including it |
| CN109706426A (en) * | 2017-10-26 | 2019-05-03 | 爱德华兹真空泵有限责任公司 | Use the ionic pump inert gas stability of the cathode material of little crystallite size |
-
2007
- 2007-09-28 CN CNU2007201757207U patent/CN201106064Y/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9136794B2 (en) | 2011-06-22 | 2015-09-15 | Research Triangle Institute, International | Bipolar microelectronic device |
| CN108475613A (en) * | 2016-02-19 | 2018-08-31 | 工程吸气公司 | The non-porous cathode of sintering and the sputter ion pump including it |
| CN108475613B (en) * | 2016-02-19 | 2020-06-23 | 工程吸气公司 | Sintered non-porous cathode and sputter ion vacuum pump comprising same |
| CN109706426A (en) * | 2017-10-26 | 2019-05-03 | 爱德华兹真空泵有限责任公司 | Use the ionic pump inert gas stability of the cathode material of little crystallite size |
| CN109706426B (en) * | 2017-10-26 | 2020-01-21 | 爱德华兹真空泵有限责任公司 | Ion pump inert gas stability using small grain size cathode materials |
| CN108194314A (en) * | 2017-12-31 | 2018-06-22 | 中国电子科技集团公司第十二研究所 | Gas trapping type vacuum pump and preparation method thereof and application method |
| CN108194314B (en) * | 2017-12-31 | 2024-02-20 | 中国电子科技集团公司第十二研究所 | Gas trapping vacuum pump and manufacturing method and using method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080827 Termination date: 20120928 |