CN201096899Y - A laser processing dual-hole photoelectric detection device - Google Patents

A laser processing dual-hole photoelectric detection device Download PDF

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Publication number
CN201096899Y
CN201096899Y CN 200720074787 CN200720074787U CN201096899Y CN 201096899 Y CN201096899 Y CN 201096899Y CN 200720074787 CN200720074787 CN 200720074787 CN 200720074787 U CN200720074787 U CN 200720074787U CN 201096899 Y CN201096899 Y CN 201096899Y
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China
Prior art keywords
convex lens
amplifying circuit
light
receiving unit
laser processing
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Expired - Fee Related
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CN 200720074787
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Chinese (zh)
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曹圣泉
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Baoshan Iron and Steel Co Ltd
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Baoshan Iron and Steel Co Ltd
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Priority to CN 200720074787 priority Critical patent/CN201096899Y/en
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Abstract

The utility model discloses a photo-electric detecting device of the laser processing diplopore, which comprises a transmitting part and a receiving part. The transmitting part and the receiving part are respectively positioned at both ends of a detected workpiece, the transmitting part is composed of a semiconductor laser module (1) and an alignment light path (2), the alignment light path (2) comprises a concave lens (21) and a convex lens (22), the focal positions of the concave lens (21) and the convex lens (22) are coincident, and the luminous point of the semiconductor laser module (1) is positioned at the focus position; the receiving part is composed of a focused light path convex lens (4), an optoelectronic switching and amplifying circuit (5) and a comparison circuit (6), the optoelectronic switching and amplifying circuit (5) comprises a photodiode (51) and an amplifying circuit (52), and the photodiode (51) is positioned at the focus position of the focused light path convex lens (4). Through the photo-electric detecting device of the laser processing diplopore of the utility model, whether the detected workpiece is qualified can be judged fast and accurately.

Description

A kind of photoelectric detection system of Laser Processing diplopore
Technical field
The utility model relates to a kind of photoelectric detection system, particularly a kind of photoelectric detection system that is used for detection laser processing diplopore.
Background technology
At present, photoelectric detection system can be divided into active and passive type two classes, actively forms by transmitting and receiving two parts; Passive type does not have the emission part, only is made up of receiving unit.The active course of work is: when receiving unit was received the light signal that radiating portion launches, circuit was failure to actuate; When since barrier block when making that receiving unit can not receive the light signal that radiating portion launches circuit operation.The course of work of passive type is identical with the active course of work, and just its relies on and is detected the light signal that object itself launches and moves.
The radiating portion of photoelectric detection system adopts light emitting diode mostly, and scioptics focus on the back with its light beam and shine measured workpiece as pointolite.Receiving unit adopts electro-optical pickoff, and electro-optical pickoff is the photosensitive device that light signal is converted to electric signal, and it can be used for detecting the non electrical quantity that causes that directly light intensity changes, and also can be used to detect to convert other non electrical quantities that light quantity changes to; Electro-optical pickoff commonly used mainly contains photovalves such as photoelectric tube, photomultiplier, photoresistance, photodiode and phototriode, photoelectric cell, semiconductor color sensitive sensor, photoelectricity thyristor, pyroelectric sensor, photoelectric coupled device.
Laser is beaten the active photoelectric detection system of the many employings of detection of single hole, and radiating portion adopts light emitting diode, and scioptics shine on the workpiece after its light beam is focused on, when the hole on the workpiece is punched, receiving unit is received the light that sees through the hole, and receiving circuit does not send signal, shows that product is qualified; When the Kong Wei on the workpiece was punched, receiving unit can not receive the light through the hole, and receiving circuit sends signal, showed that product is defective.
Because the luminous power that light emitting diode sends is lower, hot spot is inhomogeneous, the angle of divergence is bigger, receiving unit can only detect having or not through the light in hole, be difficult to detect the power of light, and the detection of laser Double Punch need be differentiated atresia, single hole and diplopore, promptly needs to detect the power through the light in hole, so above-mentioned laser is played the detection that the pick-up unit of single hole can't be realized the laser Double Punch.
Summary of the invention
For addressing the above problem, the utility model provides a kind of photoelectric detection system of Laser Processing diplopore, realizes whether the material of judging the punching position is quickly and accurately removed fully, and the diplopore of judging detected workpiece is the logical or whole obstructed situations of all-pass, single hole.
For achieving the above object, the photoelectric detection system of a kind of Laser Processing diplopore of the present utility model, form by radiating portion and receiving unit, described radiating portion and receiving unit lay respectively at the two ends of detected workpiece, described radiating portion is made up of semiconductor laser module 1 and collimated light path 2, described collimated light path 2 comprises that the light that noise spectra of semiconductor lasers module 1 is sent expands the concavees lens 21 of bundle and the divergent beams behind the concavees lens 21 expansion bundles is collimated into parallel beam convex lens 22, and the focal position of described concavees lens 21 and convex lens 22 overlaps and the luminous point of described semiconductor laser module 1 is positioned at this focus place; Described receiving unit by focused light passages convex lens 4, with the intensity level of light beam convert electric signal and the opto-electronic conversion of amplifying and amplifying circuit 5 to, comparator circuit 6 that the output voltage V m and the reference voltage V r of opto-electronic conversion and amplifying circuit 5 compared forms, described opto-electronic conversion and amplifying circuit 5 comprise photodiode 51 and amplifying circuit 52, and described photodiode 51 is positioned at the focus place of focused light passages convex lens 4.
By the photoelectric detection system of Laser Processing diplopore of the present utility model, can judge the diplopore processing situation of the detected workpiece of Laser Processing diplopore rapidly and accurately, thereby judge whether detected workpiece is qualified.
Description of drawings
Fig. 1 is that the photoelectric detection system of Laser Processing diplopore of the present utility model constitutes synoptic diagram;
Fig. 2 is the receiving unit circuit diagram of the photoelectric detection system of Laser Processing diplopore.
Embodiment
1 couple of embodiment of the present utility model describes in conjunction with the accompanying drawings now.Fig. 1 is that the photoelectric detection system of Laser Processing diplopore of the present utility model constitutes synoptic diagram, and as shown in the figure, the photoelectric detection system of Laser Processing diplopore mainly is made up of radiating portion and receiving unit.Radiating portion mainly is made up of semiconductor laser module 1 and collimated light path 2, and the relative position of the two is fixed by mechanical hook-up.Semiconductor laser module 1 adopts German RDL-6930 red light semiconductor laser module, and its power can reach 50mW, and hot spot is even.Collimated light path 2 is the inverted telescope system, mainly comprise concavees lens 21 and convex lens 22, the focal position of concavees lens 21 and convex lens 22 overlaps, the luminous point of semiconductor laser module 1 is positioned at this focus place, the minor diameter hot spot that concavees lens 21 noise spectra of semiconductor lasers modules 1 are sent expands bundle and homogenize, the clear aperture of concavees lens 21 is greater than the size that hot spot is accepted in its placement location place, makes detection light that semiconductor laser module 1 sends all by concavees lens 21; Convex lens 22 are collimated into parallel beam with the divergent beams that concavees lens 21 expand after restrainting, and make the surface of its vertical irradiation to detected workpiece 3, and the clear aperture of convex lens 22 is greater than the scope size of detected workpiece 3 punchings; By focal length size and its position apart from semiconductor laser module 1 of adjustment of selecting concavees lens 21 and convex lens 22, feasible light beam by convex lens 22 can cover the scope of detected workpiece 3 punchings fully.
Receiving unit mainly comprises focused light passages convex lens 4, opto-electronic conversion and amplifying circuit 5 and voltage comparator circuit 6.The effect of focused light passages convex lens 4 is for focused light passages, will be to the photodiode 51 of opto-electronic conversion and amplifying circuit 5 through the light focusing in hole, the clear aperture of focused light passages convex lens 4 can equate or be bigger that the focal length of focused light passages convex lens 4 can be selected according to the mounting condition at scene with convex lens 22; Opto-electronic conversion and amplifying circuit 5 mainly comprise photodiode 51 and amplifying circuit 52, photodiode 51 adopts BPV10 high-gain photodiode, it places the focus place of focused light passages convex lens 4, to convert current signal to through the intensity level of the light beam in detected workpiece 3 holes, and realize the diplopore of detected workpiece 3 is detected by amplifying circuit 52 and comparator circuit 6.
2 pairs of receiving circuits describe in conjunction with the accompanying drawings now, and Fig. 2 is the receiving unit circuit diagram of the photoelectric detection system of Laser Processing diplopore of the present utility model.Amplifying circuit 52 and comparator circuit 6 after photodiode 51 receives light beam through the hole, convert light intensity value linearity to low current signal I as shown in Figure 2; Amplifying circuit 52 is by amplifier LM258 (NS company) and resistance R 0, R 1, R 2Form R 0=10K Ω, R 1=1K Ω, R 2Range of adjustment be 0~100K Ω, be voltage signal Vm, wherein Vm=IR with faint current signal I linear amplification 0(R 1+ R 2)/R 1, by regulating R 2Can change the output voltage V m of amplifying circuit 52; Voltage comparator circuit 6 is by comparer MAX921 (MAXIM company) and resistance R 3, R 4Form R 4=3.3K Ω, R 3Range of adjustment be 0~10K Ω, with voltage signal Vm and reference voltage V r comparison, the wherein Vr=V of amplifying circuit 52 output 0R 4/ (R 3+ R 4), V 0Be supply voltage, supply voltage is constant 5V, if the voltage Vm of amplifying circuit 52 outputs is higher than reference voltage V r, then voltage comparator circuit 6 does not send signal, show that product is qualified, if the voltage Vm of amplifying circuit 52 outputs is lower than reference voltage V r, then voltage comparator circuit 6 sends signal, shows that product is defective.By regulating R 3Resistance can change the size of reference voltage V r, realize that when workpiece is not perforated or only beats single hole the voltage Vm that amplifying circuit 52 is exported is lower than reference voltage V r, voltage comparator circuit 6 sends signal; When workpiece during by Double Punch, make the voltage Vm of amplifying circuit 52 outputs be higher than reference voltage V r, voltage comparator circuit 6 does not send signal.
After photodiode 51 receives light beam through the hole, with light intensity value linearity convert low current signal I to, pass through resistance R again 0After convert small voltage signal V to 1=IR 0, V 1Zoom into voltage signal Vm behind the process operational amplifier LM258, wherein Vm=V 1(R 1+ R 2)/R 1, the value Vm of measurement Vm when two skies are not all punched 0, the value Vm of Vm when only punching a hole 1The value Vm of Vm when punching two holes 2, by regulating resistance R 2Resistance make Vm 0Approach Vm 1, and Vm 2-Vm 1>1; Vm compares through MAX921 and reference voltage V r, wherein Vr=5R 4/ (R 3+ R 4), regulate R 3Resistance make Vr=(Vm 2-Vm 1)/2.So just realize: when two Kong Jun were punched, Vm was higher than reference voltage V r, and voltage comparator circuit 6 does not send signal, showed that product is qualified.When two Kong Junwei were punched or only punch a hole, Vm was lower than reference voltage V r, and voltage comparator circuit 6 sends signal, showed that product is defective.Therefore, by changing R 0, R 1, R 2, R 3And R 4Resistance can realize that voltage comparator circuit 6 sends signal when detected workpiece is not perforated or only beats single hole, detect underproof product.

Claims (1)

1, a kind of photoelectric detection system of Laser Processing diplopore is made up of radiating portion and receiving unit, and described radiating portion and receiving unit lay respectively at the two ends of detected workpiece, it is characterized in that:
Described radiating portion is made up of semiconductor laser module (1) and collimated light path (2), described collimated light path (2) comprises that the light that noise spectra of semiconductor lasers module (1) is sent expands the concavees lens (21) of bundle and the divergent beams behind concavees lens (21) the expansion bundle is collimated into parallel beam convex lens (22), and the focal position of described concavees lens (21) and convex lens (22) overlaps and the luminous point of described semiconductor laser module (1) is positioned at this focus place;
Described receiving unit is by focused light passages convex lens (4), convert the intensity level of light beam electric signal and opto-electronic conversion of amplifying and amplifying circuit (5) to, the output voltage V m of opto-electronic conversion and amplifying circuit (5) and the comparator circuit (6) that reference voltage V r compares are formed, described opto-electronic conversion and amplifying circuit (5) comprise photodiode (51) and amplifying circuit (52), and described photodiode (51) is positioned at the focus place of focused light passages convex lens (4).
CN 200720074787 2007-09-18 2007-09-18 A laser processing dual-hole photoelectric detection device Expired - Fee Related CN201096899Y (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104360407A (en) * 2014-10-30 2015-02-18 创迈精密金属成型(苏州)有限公司 Laser detection device and detection method thereof
CN110907041A (en) * 2019-12-06 2020-03-24 中国空空导弹研究院 Refrigeration state judgment system of refrigeration type infrared focal plane detector
CN112881340A (en) * 2021-01-12 2021-06-01 华中农业大学 General sensing device of refraction type thin-surface laser seed flow
CN114763478A (en) * 2021-01-13 2022-07-19 宝山钢铁股份有限公司 Coke oven heating gas exchange system cock handle breakage detection device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104360407A (en) * 2014-10-30 2015-02-18 创迈精密金属成型(苏州)有限公司 Laser detection device and detection method thereof
CN104360407B (en) * 2014-10-30 2017-02-15 创迈精密金属成型(苏州)有限公司 laser detection device and detection method thereof
CN110907041A (en) * 2019-12-06 2020-03-24 中国空空导弹研究院 Refrigeration state judgment system of refrigeration type infrared focal plane detector
CN112881340A (en) * 2021-01-12 2021-06-01 华中农业大学 General sensing device of refraction type thin-surface laser seed flow
CN114763478A (en) * 2021-01-13 2022-07-19 宝山钢铁股份有限公司 Coke oven heating gas exchange system cock handle breakage detection device
CN114763478B (en) * 2021-01-13 2023-02-14 宝山钢铁股份有限公司 Cock handle fracture detection device for coke oven heating gas exchange system

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Granted publication date: 20080806

Termination date: 20130918