CN201089791Y - Wafer bearing device of splash plating platform - Google Patents
Wafer bearing device of splash plating platform Download PDFInfo
- Publication number
- CN201089791Y CN201089791Y CNU2007201526626U CN200720152662U CN201089791Y CN 201089791 Y CN201089791 Y CN 201089791Y CN U2007201526626 U CNU2007201526626 U CN U2007201526626U CN 200720152662 U CN200720152662 U CN 200720152662U CN 201089791 Y CN201089791 Y CN 201089791Y
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- bearing apparatus
- chip bearing
- ring
- pedestal
- deposition ring
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
A wafer load-bearing device of a sputtering machine platform comprises a pedestal, a deposition ring and a cover ring, wherein the pedestal is arranged inside a sputtering reaction chamber to support a to-be-sputtered wafer; while the deposition ring is arranged at the circumference of the pedestal and has a recess; moreover, the cover ting is arranged on the pedestal and the deposition ring and has a gate corresponding to the recess of the deposition ring.
Description
Technical field
The utility model is relevant for a kind of chip bearing apparatus of sputtering machine table, refers to a kind of chip bearing apparatus of discharge (arcing) phenomenon that produces when suppressing sputter especially.
Background technology
(ultra large scale integration ULSI) in the technology, for effectively defining various elements, deposits various retes usually, and by complicated photoengraving lithography, defines required element pattern in substrate at the ultra-large type unicircuit.Typical film deposition technology includes chemical vapour deposition (chemicalvapor deposition, CVD) method and physical vapor deposition (physical vapor deposition is designated hereinafter simply as PVD) method.Wherein the PVD method more includes and utilizes evaporation (evaporation), sputter methods such as (sputter) to deposit required rete, and is widely used in the metallic diaphragm deposition technique in the semi-conductor now.For example, in copper enchasing technology, for overcoming the shortcoming that copper material easily diffuses into the insulation material, tool is known the knowledgeable usually there's no one who doesn't or isn't before forming copper conductor in this field, prior to forming a barrier layer (barrier layer) in groove or the interlayer hole.And consider the barrier layer metal needs to have high electronic conductivity, low film resiativity, good deelectric transferred rate and high-temperature stability, thin thickness and good tack etc. is arranged between insulation material and metal material, at present with metal tantalum (Ta) film or tantalum nitride (TaN) film as barrier layer, and this resistance barrier film promptly is formed in groove or the interlayer hole by jet-plating method.
See also Fig. 1, Fig. 1 is the synoptic diagram of a known sputtering apparatus.As shown in Figure 1, sputtering apparatus 10 includes the metal that a reaction chamber (chamber) 12, is arranged at reaction chamber 12 tops and splashes target (target) 14, a shade 16, a chip bearing apparatus 20, in order to carry a sputter target, as the wafer 30 of a process for copper, chip bearing apparatus 20 and in order to adjust wafer 30 to the appropriate location.Sputtering apparatus 10 still comprises a wafer elevator (wafer lifter) 18, in order to reprint and transmission wafer 30 between chip bearing apparatus 20 and robotic arm.
See also Fig. 2, Fig. 2 is the part synoptic diagram of chip bearing apparatus 20 among Fig. 1.As shown in Figure 2, chip bearing apparatus 20 includes a pedestal, as an electrostatic chuck (electrostatic chuck, E-chuck) 22, pass to a direct current voltage with absorption wafer 30.Chip bearing apparatus 20 also comprises the cover ring (cover ring) 28 of deposition ring (deposition ring) 24 and one metal material of a ceramic material.As shown in Figure 2, deposition ring 24 cover part electrostatic chucks 22 are to prevent that electrostatic chuck 22 is exposed in the reaction chamber 12 and by sputter, its part surface includes layer of aluminum or pellumina (coating) 26; Cover ring 28 then is not fixed in electrostatic chuck 22 tops by other mode, in order to cover but not contact part deposition ring 24.
Owing to have a space between cover ring 28 and the deposition ring 24, therefore when carrying out sputtering process, institute's sedimentary metallic substance of desire is deposited on deposition ring 24 surfaces easily, and especially deposition ring 24 outsides are near cover ring 28 places, circle 40 places that promptly indicated among Fig. 2.Therefore when carrying out electroplating technology, this part tends to because sedimentary metallic substance and cover ring 28 have a potential difference and produce electric discharge phenomena (arcing), and easier attraction metal ion adheres to, and not only influences the thickness of jet-plating metallization, also can cause the pollution of part.
See also Fig. 3, Fig. 3 is the result schematic diagram of the groove or the interlayer hole sputter barrier layer on wafer 30 surfaces.When wafer 30 when carrying out a bias voltage sputter (bias sputter) technology, it is applied in a negative bias, to attract positive ion bombardment wafer 30 surfaces from plasma body, causes momentum to shift, and sedimentary film molecular energy is increased and rearranges.Simultaneously, also can strengthen negative bias again and cause the method that ion bombardment causes sputter (re-sputtering) again, for example in interlayer hole or groove 32 during deposit barrier layers 34, can strengthen negative bias, the excess metal material that is deposited on interlayer hole or groove 32 openings is peeled off, locating shown in circle among Fig. 3 36, and obtain the uniform barrier layer 34 of a thickness.And the discharge of 28 of deposition ring 24 and cover ring can reduce the negative bias of wafer 30, not only influences the thickness of barrier layer; Simultaneously also can reduce aforementioned ion bombardment efficient, influence again the sputter uniformity coefficient of sputter result and barrier layer 34, improve the resistance value of interlayer connector or groove lead.
The utility model content
Therefore, the utility model provides a kind of chip bearing apparatus of sputtering machine table in this, avoiding the discharge situation between deposition ring and cover ring in the known techniques, and improves the sputter result who influences because of discharge.
According to claim of the present utility model, provide a kind of chip bearing apparatus of sputtering machine table, include a pedestal (pedestal), a deposition ring (deposition ring) and a cover ring (coverring).This pedestal is arranged at the wafer for the treatment of sputter in the sputter in order to mounting one.And this deposition ring is arranged at the peripheral part of this pedestal, and this deposition ring has a groove.This cover ring then is arranged on this pedestal and this deposition ring, and has a gate (gate) corresponding to this groove of this deposition ring.
According to chip bearing apparatus provided by the utility model, chimeric but do not contact the groove of deposition ring by the gate of cover ring, be deposited on deposition ring near the cover ring part with the metallic substance of avoiding sputter, the generation of the situation of therefore can avoiding discharging.Simultaneously because of avoiding electric discharge phenomena, and can reduce its influence again to jet-plating metallization thickness and uniformity coefficient, and the pollution of minimizing part.
Description of drawings
Fig. 1 is the synoptic diagram of a known sputtering apparatus.
Fig. 2 is the part synoptic diagram of chip bearing apparatus among Fig. 1.
Fig. 3 is the result schematic diagram of the groove or the interlayer hole sputter barrier layer of wafer surface.
Fig. 4 is a preferred embodiment of the chip bearing apparatus of sputtering machine table provided by the utility model.
The main element nomenclature
10 sputtering apparatuss, 12 reaction chambers
14 splash target 16 shades
18 wafer elevators, 20 chip bearing apparatus
22 electrostatic chucks, 24 deposition ring
26 aluminium or pellumina 28 cover ring
30 wafers, 32 interlayer holes or groove opening
34 barrier layers
40 chip bearing apparatus, 42 pedestals
44 deposition ring, 46 grooves
48 metallic membranes, 50 cover ring
52 gates, 70 wafers
Embodiment
See also Fig. 4, Fig. 4 is a preferred embodiment of the chip bearing apparatus of sputtering machine table provided by the utility model.As shown in Figure 4, the chip bearing apparatus 40 of sputtering machine table provided by the utility model includes a pedestal (pedestal) 42, is arranged in as shown in Figure 1 the sputter, treats the wafer 70 of sputter in order to mounting one.Pedestal 42 can be an electrostatic chuck (electrostatic chuck, E-chuck), in order to absorption wafer 70.In addition, pedestal 42 includes pottery (ceramic) material.
As shown in Figure 4, chip bearing apparatus 40 more includes a deposition ring (deposition ring) 44 and one cover ring (cover ring) 50.Deposition ring 44 is arranged at the peripheral part of pedestal 42 removably, and covers this peripheral part, and to prevent that pedestal 42 is exposed in the sputter and by sputter, and deposition ring 44 has a groove 46 in addition.The material that constitutes deposition ring 44 can include stupalith, and its part upper surface system can be coated with a metallic membrane 48 again, as an aluminum metal film or an alumina metals film, in order to increase surfaceness, so can cause padlock (interlocking) effect, make the bond useful area increase and the sticking power of lifting sputter rete.Metallic membrane 48 covers the part upper surface of deposition ring 44, but does not cover to groove 46.
Please consult Fig. 4 again.The cover ring 50 that chip bearing apparatus 40 is comprised is arranged at pedestal 42 and deposition ring 44 tops removably, and has a gate (gate) 52 corresponding to the groove 46 of deposition ring 42.Cover ring 50 can be a metal material, the design that gate 52 and cover ring 50 also can be one of the forming, and the height of gate 52 is about 3-5 millimeter (mm).It should be noted that actual when carrying out sputtering process that the gate 52 of cover ring 50 that is arranged at deposition ring 44 tops is chimeric mutually in the mode that does not contact with each other with the groove 46 of deposition ring 44; In other words, has a space between gate 52 and the groove 46.
Please continue to consult Fig. 4.According to the chip bearing apparatus 40 of sputtering machine table provided by the utility model, because the setting of gate 52, when carrying out sputtering process, the metallic substance of sputter only may be deposited in the groove 46 in gate 52 outsides actual.And deposition ring 44 is near cover ring 50 parts, promptly Fig. 4 in locating of being indicated of circle 60, then because of the stopping of gate 52, and the metallic substance that does not have a sputter is deposited on.That is to say that by the setting of gate 52, the situation system that sputter material is deposited on circle 60 sign places can effectively avoid, so the discharge situation of 50 of deposition ring 44 and cover ring also can be checked effectively.
As previously mentioned, electric discharge phenomena can be adhered to because of attracting metal ion easily, and influence the thickness of jet-plating metallization, and cause the pollution of part.In addition, when electric discharge phenomena betide the bias voltage sputtering process, can be because of the discharge of 50 of deposition ring 44 and cover ring, and the negative bias of reduction wafer 70, not only influence the thickness of barrier layer; Simultaneously also can reduce aforementioned ion bombardment efficient, influence again the sputter uniformity coefficient of sputter result and sputter rete.Yet because the setting of gate 52, deposition ring 44 can be avoided by the situation of sputter, simultaneously above-mentioned electric discharge phenomena and all can avoid by chip bearing apparatus 40 provided by the utility model the influence of sputter uniformity coefficient because of electric discharge phenomena cause.Therefore, need the barrier layer of high evenness in the sputter copper enchasing technology, during as retes such as metal tantalum (Ta) film or tantalum nitride (TaN) films, the chip bearing apparatus 40 of sputtering machine table provided by the utility model more can promote the required sputter result of technology.
The above only is a preferred embodiment of the present utility model, and all equalizations of being done according to the utility model claim change and modify, and all should belong to covering scope of the present utility model.
Claims (13)
1. the chip bearing apparatus of a sputtering machine table is characterized in that including:
One pedestal is arranged at the wafer for the treatment of sputter in the sputter in order to mounting one;
One deposition ring be arranged at the peripheral part of this pedestal, and this deposition ring has a groove; And
One cover ring is arranged on this pedestal and this deposition ring, and has a gate corresponding to this groove of this deposition ring.
2. chip bearing apparatus as claimed in claim 1 is characterized in that this pedestal includes an electrostatic chuck, in order to adsorb this wafer.
3. chip bearing apparatus as claimed in claim 2 is characterized in that this electrostatic chuck includes ceramic material.
4. chip bearing apparatus as claimed in claim 1 is characterized in that this deposition ring is arranged at the peripheral part of this pedestal removably.
5. chip bearing apparatus as claimed in claim 1 is characterized in that this deposition ring includes ceramic material.
6. chip bearing apparatus as claimed in claim 5 is characterized in that the upper surface portion of this deposition ring is coated with a metallic membrane.
7. chip bearing apparatus as claimed in claim 6 is characterized in that this metallic membrane does not cover this groove.
8. chip bearing apparatus as claimed in claim 6 is characterized in that this metallic membrane includes aluminium or aluminum oxide.
9. chip bearing apparatus as claimed in claim 1 is characterized in that this cover ring is arranged on this pedestal and this deposition ring removably.
10. chip bearing apparatus as claimed in claim 1 is characterized in that this cover ring includes a metal material.
11. chip bearing apparatus as claimed in claim 10 is characterized in that this cover ring and this gate are one of the forming.
12. the described chip bearing apparatus of claim 1 is characterized in that the height of this gate of this cover ring is about the 3-5 millimeter.
13. the described chip bearing apparatus of claim 1 is characterized in that this gate of this cover ring and this groove of this deposition ring do not contact with each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201526626U CN201089791Y (en) | 2007-07-10 | 2007-07-10 | Wafer bearing device of splash plating platform |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201526626U CN201089791Y (en) | 2007-07-10 | 2007-07-10 | Wafer bearing device of splash plating platform |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201089791Y true CN201089791Y (en) | 2008-07-23 |
Family
ID=39861550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007201526626U Expired - Lifetime CN201089791Y (en) | 2007-07-10 | 2007-07-10 | Wafer bearing device of splash plating platform |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201089791Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105506570A (en) * | 2014-10-16 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Compression ring component and physical vapor deposition equipment |
| CN107227448A (en) * | 2017-06-30 | 2017-10-03 | 北京北方华创微电子装备有限公司 | Pedestal and physical vapor deposition device |
| CN109402593A (en) * | 2018-11-02 | 2019-03-01 | 上海华力微电子有限公司 | A kind of method and deposition ring preventing deposition ring arc discharge |
-
2007
- 2007-07-10 CN CNU2007201526626U patent/CN201089791Y/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105506570A (en) * | 2014-10-16 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Compression ring component and physical vapor deposition equipment |
| CN105506570B (en) * | 2014-10-16 | 2018-11-06 | 北京北方华创微电子装备有限公司 | A kind of pressure ring assembly and Pvd equipment |
| CN107227448A (en) * | 2017-06-30 | 2017-10-03 | 北京北方华创微电子装备有限公司 | Pedestal and physical vapor deposition device |
| WO2019001298A1 (en) * | 2017-06-30 | 2019-01-03 | 北京北方华创微电子装备有限公司 | Carrying device and physical vapor deposition apparatus |
| US11315768B2 (en) | 2017-06-30 | 2022-04-26 | Beijing Naura Microelectronics Equipment Co., Ltd. | Loading apparatus and physical vapor deposition apparatus |
| CN107227448B (en) * | 2017-06-30 | 2023-10-13 | 北京北方华创微电子装备有限公司 | Susceptor and physical vapor deposition apparatus |
| CN109402593A (en) * | 2018-11-02 | 2019-03-01 | 上海华力微电子有限公司 | A kind of method and deposition ring preventing deposition ring arc discharge |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zheng Yibiao Inventor after: Liang Liqun Inventor after: Huang Yuren Inventor after: Chen Ben Inventor after: Ding Shengyi Inventor before: Zheng Yibiao Inventor before: Liang Liqun Inventor before: Huang Yuren Inventor before: Chen Ben |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: ZHENG BIAO; LIANG LIQUN; HUANG YUREN; CHEN BEN TO: ZHENG BIAO; LIANG LIQUN; HUANG YUREN; CHEN BEN; DING SHENGYI |
|
| CX01 | Expiry of patent term |
Granted publication date: 20080723 |
|
| CX01 | Expiry of patent term |