CN201083962Y - Grating for wafer edge exposure - Google Patents
Grating for wafer edge exposure Download PDFInfo
- Publication number
- CN201083962Y CN201083962Y CNU200720070546XU CN200720070546U CN201083962Y CN 201083962 Y CN201083962 Y CN 201083962Y CN U200720070546X U CNU200720070546X U CN U200720070546XU CN 200720070546 U CN200720070546 U CN 200720070546U CN 201083962 Y CN201083962 Y CN 201083962Y
- Authority
- CN
- China
- Prior art keywords
- wafer
- crystal round
- round fringes
- grating
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The utility model provides a light barrier used for exposing the wafer edge, which resolves the problems of long exposure time and low product quality when the current light barrier structure exposes the wafer edge. The utility model is provided with a non-light tight light barrier figure which is fan-shaped ring. The side edge of the ring is formed by two concentric arcs. During the process of exposing the wafer edge, the projection of the arc of the light barrier figure with bigger curvature radius on the wafer is on the edge of the wafer and the projection of the other arc is inside the edge. The length of the light barrier figure is 3 to 8 mm. The utility model has the advantages of shortening the exposure time and improving the product quality on the premise of keeping other parameters and ensuring that the manufacturing process of the wafer edge reaches the requirements of energy and width.
Description
Technical field
The utility model relates to a kind of optical grating construction, relates in particular to a kind of grating that is used for the crystal round fringes exposure.
Background technology
At present, the semiconductor lithography technological process of standard comprises: be coated with photoresistance, exposure and development.Comprise crystal round fringes exposure (Wafer Edge Exposing) step in the exposure manufacture process again.The crystal round fringes exposure is the annular region that adopts special light source uniform irradiation crystal round fringes preset width, to remove the photoresistance of crystal round fringes in follow-up developing process, exposes metal level, for probe contact conduction.
In the crystal round fringes exposure process, with light source with to have transparent figure (normally circular, grating as shown in Figure 1) is fixed on the crystal round fringes top, make the projection of raster graphic on wafer drop on the fringe region of wafer just, by at the uniform velocity rotating wafer, make the annular region of crystal round fringes evenly be subjected to light, reach predetermined exposure gross energy, thereby finish the crystal round fringes exposure manufacture process.
Finish the crystal round fringes exposure and the used time be directly proportional, and be inversely proportional to the pore size of raster graphic, the power of light source with the girth of wafer, predetermined exposure gross energy.For the wafer of 8 inches of a slices, its week is about 628 millimeters, and it is burnt to suppose that the exposure gross energy need reach 200 millis, and the power of light source is 1500 milliwatts, and the aperture size of the raster graphic of employing is 1.2 millimeters, and the then whole time shutter is about 100 seconds.Because the crystal round fringes step of exposure will repeat on board in a large number, therefore, be necessary to manage to shorten the time shutter to improve output.
The utility model content
The purpose of this utility model is to provide a kind of new optical grating construction, by adopting this grating, can effectively shorten the used time of crystal round fringes exposure process, thereby improves the output of wafer.
To achieve the above object, the utility model provides a kind of grating that is used for the crystal round fringes exposure, and it has the raster graphic of a printing opacity, and described raster graphic is a fan ring, and its side is made of two isocentric circular arc.
Further, in the crystal round fringes exposure process, the circular arc that described raster graphic radius-of-curvature is bigger drops in the projection on the wafer on the edge of wafer, and the projection of another circular arc drops on the inboard of crystal round fringes.
Further, the width of described raster graphic equals the crystal round fringes exposure manufacture process and requires the photoresistance width removed.
Further, the length of described raster graphic is 3～8 millimeters.
The utility model has the size that the grating of fanning the ring figure increases transparent aperture by employing, when not changing other parameters and guaranteeing that the crystal round fringes exposure manufacture process reaches energy and width requirement, can effectively shorten the time shutter, thereby improves output.
Description of drawings
The grating that is used for the crystal round fringes exposure of the present utility model is provided by following embodiment and accompanying drawing.
Fig. 1 is existing optical grating construction synoptic diagram;
Fig. 2 is an optical grating construction synoptic diagram of the present utility model.
Embodiment
Below with reference to accompanying drawing grating of the present utility model is described in further detail.
As shown in Figure 2, grating 1 of the present utility model is used for the crystal round fringes exposure manufacture process, has the raster graphic 10 of a printing opacity on it, and this figure 10 is fan rings, and its side is made of two isocentric circular arc.In the crystal round fringes exposure process, light source and grating 1 are fixed on the crystal round fringes top, make the projection of raster graphic 10 on wafer just in time drop on the edge of wafer, along with the uniform rotation of wafer, form the exposure area of annular at crystal round fringes.
The circular arc that raster graphic 10 radius-of-curvature are bigger (circular arc on right side among the figure) drops on the edge of wafer in the projection on the wafer, the projection of another circular arc (among the figure left side circular arc) drops on the inboard of crystal round fringes, and the width w of raster graphic 10 equals the crystal round fringes exposure manufacture process and requires the photoresistance width removed.In addition, the length d of raster graphic 10 (the pairing chord length of circular arc that radius-of-curvature is less) can be designed to 3～8 millimeters.
In embodiment of the present utility model, the length d of raster graphic 10 is made as 4 millimeters, is that 1.2 millimeters circular hole figure is compared with existing diameter, and aperture size (area of raster graphic) has improved about 3 times.According to the inverse relation of time shutter and pore size as can be known, adopt this grating, the time shutter can be shortened to originally 1/4, correspondingly, output can be improved 4 times.
Claims (4)
1. one kind is used for the grating that crystal round fringes exposes, and the raster graphic that it has a printing opacity is characterized in that: described raster graphic is a fan ring, and its side is made of two isocentric circular arc.
2. the grating that is used for the crystal round fringes exposure as claimed in claim 1, it is characterized in that: in the crystal round fringes exposure process, the circular arc that described raster graphic radius-of-curvature is bigger drops in the projection on the wafer on the edge of wafer, and the projection of another circular arc drops on the inboard of crystal round fringes.
3. the grating that is used for crystal round fringes exposure as claimed in claim 1 is characterized in that: the width of described raster graphic equals the crystal round fringes exposure manufacture process and requires the photoresistance width removed.
4. the grating that is used for the crystal round fringes exposure as claimed in claim 1, it is characterized in that: the length of described raster graphic is 3～8 millimeters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200720070546XU CN201083962Y (en) | 2007-06-01 | 2007-06-01 | Grating for wafer edge exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200720070546XU CN201083962Y (en) | 2007-06-01 | 2007-06-01 | Grating for wafer edge exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201083962Y true CN201083962Y (en) | 2008-07-09 |
Family
ID=39626433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200720070546XU Expired - Lifetime CN201083962Y (en) | 2007-06-01 | 2007-06-01 | Grating for wafer edge exposure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201083962Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187250A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Multiple-time epitaxial growth method |
-
2007
- 2007-06-01 CN CNU200720070546XU patent/CN201083962Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187250A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Multiple-time epitaxial growth method |
| CN103187250B (en) * | 2011-12-31 | 2016-02-03 | 中芯国际集成电路制造(上海)有限公司 | Repeatedly epitaxial growth method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4398507B2 (en) | OPTICAL ELEMENT, OPTICAL ELEMENT MANUFACTURING MANUFACTURING METHOD, AND PHOTOELECTRIC CONVERSION DEVICE | |
| JP2008123951A (en) | Solar simulator | |
| CN103034049A (en) | Method for manufacturing metal wire and array substrate | |
| US10067417B2 (en) | Mask plate, mask exposure device and mask exposure method | |
| US3948660A (en) | Method for the manufacture of fresnel lenses using light-sensitive materials | |
| CN201083962Y (en) | Grating for wafer edge exposure | |
| CN209656921U (en) | A kind of light decay device for solar simulator optical energy attenuation | |
| JP2015228350A (en) | Solar simulator and measurement method of electric characteristics of solar cell | |
| CN104698769A (en) | Splicing and exposure method of sapphire substrate | |
| CN102497738A (en) | Method for manufacturing inner core plate by using outer semi-automatic exposure machine | |
| CN103293677B (en) | Light uniforming device and preparation method thereof | |
| US20100209857A1 (en) | Lithography Process for the Continuous Direct Writing of an Image | |
| KR101405251B1 (en) | Lithography and apparatus for processing substrate using the same | |
| TWI240852B (en) | Photolithograph system with variable shutter and method of using the same | |
| CN204440009U (en) | A kind of for checking the exposure machine of laser direct imaging dry film quality | |
| CN102929107B (en) | Pupil shaping device for photoetching illumination | |
| CN107807493B (en) | Mask plate and exposure equipment | |
| CN211015012U (en) | Adjusting device and wafer exposure equipment | |
| CN220691203U (en) | Soft side diaphragm | |
| CN205507356U (en) | Ultraviolet laser light scribing device | |
| CN104903073B (en) | Nanostructure and preparation method thereof | |
| CN112799286A (en) | Three-dimensional micro-nano structure photoetching system and method thereof | |
| CN217932412U (en) | Laboratory photoresist regional exposure device | |
| CN212134984U (en) | Lens transfer roller and lens transfer layer | |
| CN208138904U (en) | A kind of market LED light |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130326 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130326 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20080709 |