CN201055609Y - Semiconductor multifunctional far-infrared treatment belt - Google Patents

Semiconductor multifunctional far-infrared treatment belt Download PDF

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Publication number
CN201055609Y
CN201055609Y CNU2007200723699U CN200720072369U CN201055609Y CN 201055609 Y CN201055609 Y CN 201055609Y CN U2007200723699 U CNU2007200723699 U CN U2007200723699U CN 200720072369 U CN200720072369 U CN 200720072369U CN 201055609 Y CN201055609 Y CN 201055609Y
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CN
China
Prior art keywords
infrared
utility
model
treatment belt
intermediate layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNU2007200723699U
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Chinese (zh)
Inventor
潘跃进
贾海泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHANGHAI JIERUN SILK TEXTILES INDUSTRY Co Ltd
Shanghai Zhongda Science & Technology Development Co Ltd
Original Assignee
SHANGHAI JIERUN SILK TEXTILES INDUSTRY Co Ltd
Shanghai Zhongda Science & Technology Development Co Ltd
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Application filed by SHANGHAI JIERUN SILK TEXTILES INDUSTRY Co Ltd, Shanghai Zhongda Science & Technology Development Co Ltd filed Critical SHANGHAI JIERUN SILK TEXTILES INDUSTRY Co Ltd
Priority to CNU2007200723699U priority Critical patent/CN201055609Y/en
Application granted granted Critical
Publication of CN201055609Y publication Critical patent/CN201055609Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to a semiconductor multi-purpose far-infrared treatment belt and comprises a coating made of fabric and an intermediate layer. The utility model is characterized in that the intermediate layer is provided with a plurality of infrared light-emitting diodes and is electrically connected with a power supply and a temperature control device. The treatment belts of various powers can be made according to different areas and shapes, such as the waistband, the leggings, and the arm band and so on. The utility model can be used for treating various diseases; the rechargeable batteries can be used; the utility model can be used for treatment and health care at any time and in any place.

Description

Multichip semiconductor function far-infrared therapy band
Technical field
This utility model relates to a kind of normal life health keeping products, especially relates to a kind of multichip semiconductor function far-infrared therapy band.
Background technology
Human body is combined by many cells, and cell is formed by littler elements collection, and molecule is made up of more tiny atom, and human body is made of countless unit atoms.These atoms of human body have certain wavelengths, and therefore, human body itself is exactly an infrared radiation source, if infrared profile imbalance or local the disappearance, body will not feel well or be sick; On the contrary, if receive the energy (for example far infrared) of identical wavelength from the outside, produce the resonance effect with the atom of body interior, will make that the activity of atom comes to life in the human body, and produce kinergety, the kinergety of atom changes after the maturation, the composition cell of the timely activating human body of meeting, promote metabolism, accelerate blood circulation and also can therefore become smooth and easy, thereby reach the purpose of building body.
Based on above-mentioned theory, infrared technique has also obtained good application at medical field, but because the equipment and the technology of existing product, also there is considerable restraint in the use in the armarium according to this infrared technique makes.For example, in textile industry a lot of new products are just arranged at present, wherein a kind of is the anion far infrared textile that is formed by ANION FIR finishing agent JLSUN 888 processed.Unit testings such as Japan fibre quality technique center prove: 3500/cubic centimetre of this anion far-infrared fabric negative ion concentrations, far infrared transmissivity is more than 86%.This textile not only has good warming intensification, health-care effect, and has good hand feeling, fastness and comfortable ventilating.It can absorb extraneous energy and store, and again to the human body feedback, thereby makes human body that warmth sensation be arranged, and generally can make people's 2-5 ℃ of sendible temperature rising.Far infrared radiation also has activating cell, increases immunologic function, effects such as microcirculation improvement.But this product is through after repeatedly washing, and the concentration of anion just has only 2300/cubic centimetre, and far infrared transmissivity also reduces to 85%.Therefore, the present textile that exists is along with access times increases, and function can very fast disappearance.
China Patent No. ZL90107117.X has also announced a kind of quasiconductor infrared light treatment instrument, this therapeutic instrument adopts light shower and the laser accunputure of heterojunction semiconductor luminous tube as light source, comprises combination frequency pulse generator, luminous tube temperature and critical pieces such as power controller, timer and light power meter simultaneously.This utility model provides a kind of volume little, quasiconductor infrared therapeutic apparatus easy to carry, but circuit and structure that this therapeutic instrument itself is adopted, when the decision user uses, still need to be in relative static conditions, and therefore its light-emitting area and lighting angle relative fixed, still have bigger limitation on the scope of application.
The utility model content
The purpose of this utility model is to overcome the defective of prior art, and a kind of multichip semiconductor function far-infrared therapy band that can extensive use is provided.
The purpose of this utility model realizes by following technical method: a kind of multichip semiconductor function far-infrared therapy band, comprise overcoat and intermediate layer that fabric is made, it is characterized in that being equipped with plurality of infrared, and electrically connect with power supply, temperature controller in the intermediate layer.Utilize the technical parameter of infrarede emitting diode, can adopt different battery capacities, connect different diodes, form different power, obtain different wavelength according to no purposes.
Infrarede emitting diode adopts infrared patch light-emitting diode, and its quantity can be carried out additions and deletions as required, and the light wavelength of sending is 800 nanometer to 1400 nanometers.Infrared patch light-emitting diode connects in the mode of serial or parallel connection.Power supply can utilize rechargeable battery.
Multichip semiconductor function far-infrared therapy band disclosed in the utility model, its advantage shows: can form the treatment belt of different capacity according to different area, shape, as belt, gaiter, arm band etc.Various various disease are treated, utilize rechargeable battery, more can carry out treatment and health whenever and wherever possible.
Description of drawings
Fig. 1 is the circuit theory sketch map of this utility model quasiconductor infrared therapeutic band.
Fig. 2 is a sketch map of the present utility model.
The specific embodiment
See also Fig. 1, this figure is the circuit theory sketch map of this utility model multichip semiconductor function far-infrared therapy band.This utility model multichip semiconductor function far-infrared therapy band comprises that this power supply is a dc source, can use dc source, accumulator, rechargeable battery etc. in order to support the power supply of circuit operation; The temperature controller that turns on and off in order to control circuit; And, in order to the infrarede emitting diode of far infrared to be provided.
With reference to Fig. 2, this utility model comprises overcoat 1 and the intermediate layer 2 that fabric is made, and this intermediate layer can be the cotton-wool of warming usefulness, or non-woven fabrics.It is characterized in that in the intermediate layer 2 are provided with plurality of infrared 3, and and power supply 4, temperature controller 5 electrically connect.
Described infrarede emitting diode adopts flexible infrarede emitting diode paster bar group.And be connected into infraluminescence screen by plurality of infrared.Or plurality of infrared is connected into after the infrarede emitting diode group and is unified into infraluminescence screen.
In preferred embodiment of the present utility model, described power supply adopts the 12V dc source, and described infrarede emitting diode adopts infrared patch light-emitting diode.Open power supply, Closing Switch can start light emitting diode.Because human body infrared wavelength major part is in the scope of 800 nanometer to 1400 nanometers, therefore, the wavelength that the light emitting diode that this utility model adopted sends is also in the scope of 800nm to 1400nm.

Claims (6)

1. a multichip semiconductor function far-infrared therapy band comprises overcoat and intermediate layer that fabric is made, it is characterized in that being provided with plurality of infrared in the intermediate layer, and electrically connects with power supply, temperature controller.
2. Semiconductor Far Infrared treatment belt according to claim 1 is characterized in that: described infrarede emitting diode adopts flexible infrarede emitting diode paster bar group.
3. Semiconductor Far Infrared treatment belt according to claim 2 is characterized in that: plurality of infrared is that plurality of infrared is connected into infraluminescence screen.
4. Semiconductor Far Infrared treatment belt according to claim 2 is characterized in that: plurality of infrared be the infrarede emitting diode group that is in series again and be unified into infraluminescence screen.
5. Semiconductor Far Infrared treatment belt according to claim 2 is characterized in that: power supply is dc source or accumulator or rechargeable battery.
6. Semiconductor Far Infrared treatment belt according to claim 1 is characterized in that: described intermediate layer is provided with cotton-wool or non-woven fabrics.
CNU2007200723699U 2007-12-12 2007-12-12 Semiconductor multifunctional far-infrared treatment belt Expired - Fee Related CN201055609Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2007200723699U CN201055609Y (en) 2007-12-12 2007-12-12 Semiconductor multifunctional far-infrared treatment belt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2007200723699U CN201055609Y (en) 2007-12-12 2007-12-12 Semiconductor multifunctional far-infrared treatment belt

Publications (1)

Publication Number Publication Date
CN201055609Y true CN201055609Y (en) 2008-05-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2007200723699U Expired - Fee Related CN201055609Y (en) 2007-12-12 2007-12-12 Semiconductor multifunctional far-infrared treatment belt

Country Status (1)

Country Link
CN (1) CN201055609Y (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103637410A (en) * 2013-12-05 2014-03-19 吴江市社翊纺织有限公司 Multifunctional healthcare garment
CN106166333A (en) * 2016-08-19 2016-11-30 顾瑛 Flexible wearable formula Phototherapeutic instrument for anti-lumbar vertebra lumbar muscular injury

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103637410A (en) * 2013-12-05 2014-03-19 吴江市社翊纺织有限公司 Multifunctional healthcare garment
CN106166333A (en) * 2016-08-19 2016-11-30 顾瑛 Flexible wearable formula Phototherapeutic instrument for anti-lumbar vertebra lumbar muscular injury

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GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee