CN200976023Y - CMOS battery voltage detecting circuit - Google Patents

CMOS battery voltage detecting circuit Download PDF

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Publication number
CN200976023Y
CN200976023Y CN 200620061084 CN200620061084U CN200976023Y CN 200976023 Y CN200976023 Y CN 200976023Y CN 200620061084 CN200620061084 CN 200620061084 CN 200620061084 U CN200620061084 U CN 200620061084U CN 200976023 Y CN200976023 Y CN 200976023Y
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CN
China
Prior art keywords
resistance
voltage
cmos
voltage comparator
battery voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200620061084
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Chinese (zh)
Inventor
廖林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitac Computer Shunde Ltd
Shunda Computer Factory Co Ltd
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Mitac Computer Shunde Ltd
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Publication date
Application filed by Mitac Computer Shunde Ltd filed Critical Mitac Computer Shunde Ltd
Priority to CN 200620061084 priority Critical patent/CN200976023Y/en
Application granted granted Critical
Publication of CN200976023Y publication Critical patent/CN200976023Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses a CMOS battery voltage test circuit, which is positioned in the main-board testing devices of computers, comprising a voltage comparator, an MOS field effect transistor, a second resistance and a third resistance, wherein, the non inverting input ends of the voltage comparator are connected electrically with the testing device, testing the positive testing point of the CMOS battery voltage; the grid of the MOS field effect transistor is connected with the output end of the voltage comparator, the source of the MOS field effect transistor is connected electrically with the earth, and the drain of the MOS field effect transistor is connected with the signal location of the power switch on the testing device; an end of the second resistance is connected with the main-board voltage testing point of the testing device, and the other end is connected with the inverting input end of the voltage comparator; an end of the third resistance is connected electrically with the earth, and the other end is also connected with the inverting input end of the voltage comparator. The utility model provides a CMOS battery voltage test circuit, efficiently preventing the CMOS batteries from installing and the low voltage main-boards of computers from flowing into the clients because of the staff mistakes.

Description

The CMOS battery voltage detection circuit
Technical field
The utility model relates to a kind of CMOS battery voltage detection circuit.
Background technology
In the electronics manufacturing, the functional test of the electronic product important step that is absolutely necessary.For example, after finishing the dress subsides of each electronic component on the computer motherboard, plugging or assemble, need utilize testing apparatus that this computer motherboard of finishing assembling is carried out every functional test.Yet, measurement to the CMOS cell voltage on the computer motherboard is to adopt digital voltmeter at present, the tester shows that by order numerical value that this digital voltmeter shows judges whether on the low side whether the and decision of the voltage of this CMOS battery change this CMOS battery, and testing apparatus can't point out the tester whether to change this CMOS battery according to the test value of this CMOS cell voltage.Thus, adopt the test circuit of above-mentioned conventionally test equipment certainly will increase tester's test job intensity, and exist because tester's careless omission causes CMOS cell voltage the computer motherboard on the low side or neglected loading of CMOS battery to flow into the risk of client.
Summary of the invention
In view of the above problems, the purpose of this utility model is to provide a kind of CMOS battery voltage detection circuit, its can according to the magnitude of voltage of the CMOS battery on computer motherboard prompting tester whether needs change CMOS battery on this computer motherboard.
For reaching above-mentioned purpose, the utility model has adopted following technical scheme, it is a kind of CMOS battery voltage detection circuit, it is arranged in the testing apparatus of computer motherboard, it comprises a voltage comparator, a metal-oxide-semiconductor field effect transistor and first, second, third and fourth resistance, and this first resistance is connected in parallel on positive and negative electrode two test points of test CMOS cell voltage on this testing apparatus; This second resistance, one end connects the mainboard voltage test point on this testing apparatus, the inverting input that the other end connects this voltage comparator; The electrical ground connection of the 3rd resistance one end, the other end then connect the inverting input of this voltage comparator; The in-phase input end of this voltage comparator electrically connects on the anodal test point of test CMOS cell voltage on this testing apparatus, and the output terminal of this voltage comparator electrically connects the grid of this metal-oxide-semiconductor field effect transistor by the 4th resistance; In addition, the electrical ground connection of the source electrode of this metal-oxide-semiconductor field effect transistor, drain electrode connect the power switch signal point on this testing apparatus, and when this power switch signal point was low level, this testing apparatus is powered-down voluntarily.
Thus, when carrying out the computer motherboard test, the in-phase input end of this voltage comparator will obtain this CMOS battery voltage value, this is second years old, three resistance carry out the voltage dividing potential drop and the 3rd ohmically magnitude of voltage are imported the inverting input of this voltage comparator, this voltage comparator relatively this in-phase input end is also exported the grid that a high level or low level signal are given this metal-oxide-semiconductor field effect transistor thus with the magnitude of voltage that this inverting input inserts, this voltage comparator is if be output as low level signal then with this metal-oxide-semiconductor field effect transistor of conducting, this power switch signal is named a person for a particular job and is dragged down into low level by this metal-oxide-semiconductor field effect transistor, thereby, this testing apparatus voluntarily powered-down with the prompting tester.
Select the resistance of second and third suitable resistance and the magnitude of voltage of this second resistance access just can obtain a suitable comparative voltage, this comparative voltage can be set according to the testing standard of reality, and the CMOS cell voltage on this computer motherboard is lower than this comparative voltage, and promptly to be considered to voltage on the low side.Adopt technique scheme, the CMOS battery voltage detection circuit that the utility model provides is simple in structure, realize that easily the CMOS cell voltage the computer motherboard on the low side or neglected loading of CMOS battery that can effectively avoid tester's careless omission to cause flows into the situation of client.
Description of drawings
Fig. 1 is an embodiment circuit diagram of the CMOS battery voltage detection circuit of the utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is described in further detail.
Consult shown in Figure 1, it is an embodiment circuit diagram of the CMOS battery voltage detection circuit of the utility model, and this CMOS battery voltage detection circuit comprises a voltage comparator 110, a metal-oxide-semiconductor field effect transistor 120 and first, second, third and fourth resistance 130,140,150,160.In present embodiment, this voltage comparator 110 adopts an integrated circuit LM358, and the resistance of this first, second, third and fourth resistance is followed successively by 100K, 1K, 10K, 1K.This first resistance 130 is connected in parallel on positive and negative electrode two test points of test CMOS cell voltage on this testing apparatus; These second resistance, 140 1 ends connect the mainboard voltage test point Vcc_3.3 on this testing apparatus, the inverting input that the other end connects this voltage comparator 110; The electrical ground connection of the 3rd resistance 150 1 ends, the other end also connect the inverting input of this voltage comparator 110; The in-phase input end of this voltage comparator 110 electrically connects on the anodal test point of test CMOS cell voltage on this testing apparatus, and the output terminal of this voltage comparator 110 electrically connects the grid of this metal-oxide-semiconductor field effect transistor 120 by the 4th resistance 160; In addition, the electrical ground connection of the source electrode of this metal-oxide-semiconductor field effect transistor 120, drain electrode then connect power switch signal point PWRBT on this testing apparatus, when this power switch signal point PWRBT is low level, this testing apparatus with powered-down to point out the tester.
In present embodiment, because it is the resistance of 1K, 10K that this second and third resistance 140,150 adopts resistance successively, and this second resistance 140 connects this mainboard voltage test point Vcc_3.3, and its magnitude of voltage is 3.3V, so the comparative voltage that the inverting input of this voltage comparator 110 obtains is 3V.Thus, when carrying out the computer motherboard test, the in-phase input end of this voltage comparator 110 will obtain this CMOS cell voltage, this voltage comparator 110 will compare two magnitudes of voltage on its in-phase input end and the inverting input, if this CMOS battery voltage value is greater than or equal to 3V, then this voltage comparator 110 will be exported the grid that a high level signal is given this metal-oxide-semiconductor field effect transistor 120, these metal-oxide-semiconductor field effect transistor 120 not conductings; If this CMOS cell voltage is lower than 3V, then this voltage comparator 110 will be exported the grid that a low level signal is given this metal-oxide-semiconductor field effect transistor 120, these metal-oxide-semiconductor field effect transistor 120 conductings, the power switch signal point PWRBT that the drain electrode of this metal-oxide-semiconductor field effect transistor 120 connects then will be dragged down into low level, thereby, this testing apparatus with powered-down with the prompting tester.
In present embodiment, this comparative voltage is set at 3V.Certainly, according to the testing standard of reality, can adjust magnitude of voltage that the resistance of this second and third resistance 140,150 and this second resistance 140 inserts to set different comparative voltages.

Claims (4)

1. CMOS battery voltage detection circuit, it is arranged in the testing apparatus of computer motherboard, it is characterized in that comprising:
One voltage comparator, the in-phase input end of this voltage comparator electrically connects on this testing apparatus
On the anodal test point of test CMOS cell voltage;
It is electrical that one metal-oxide-semiconductor field effect transistor, its grid connect output terminal, its source electrode of this voltage comparator
Ground connection, its drain electrode connect the power switch signal point on this testing apparatus;
One second resistance, this second resistance, one end connect the mainboard voltage test on this testing apparatus
Point, the other end connect the inverting input of this voltage comparator; And
One the 3rd resistance, the electrical ground connection of the 3rd resistance one end, the other end also connect this voltage ratio
The inverting input of device.
2. CMOS battery voltage detection circuit according to claim 1, it is characterized in that: described CMOS battery voltage detection circuit also comprises one first resistance, and this first resistance is connected in parallel on positive and negative electrode two test points of test CMOS cell voltage on this testing apparatus.
3. CMOS battery voltage detection circuit according to claim 1 is characterized in that: described CMOS battery voltage detection circuit also comprises one the 4th resistance, and the grid of above-mentioned metal-oxide-semiconductor field effect transistor connects the output terminal of above-mentioned voltage comparator by the 4th resistance.
4. CMOS battery voltage detection circuit according to claim 1 is characterized in that: described voltage comparator is an integrated circuit LM358.
CN 200620061084 2006-06-30 2006-06-30 CMOS battery voltage detecting circuit Expired - Fee Related CN200976023Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200620061084 CN200976023Y (en) 2006-06-30 2006-06-30 CMOS battery voltage detecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200620061084 CN200976023Y (en) 2006-06-30 2006-06-30 CMOS battery voltage detecting circuit

Publications (1)

Publication Number Publication Date
CN200976023Y true CN200976023Y (en) 2007-11-14

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CN 200620061084 Expired - Fee Related CN200976023Y (en) 2006-06-30 2006-06-30 CMOS battery voltage detecting circuit

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CN (1) CN200976023Y (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101769954B (en) * 2010-01-27 2012-08-22 中山市嘉科电子有限公司 Voltage detecting circuit for multiple serial batteries
CN102841241A (en) * 2011-06-23 2012-12-26 神讯电脑(昆山)有限公司 Voltage detection circuit
CN103323777A (en) * 2012-03-21 2013-09-25 海洋王(东莞)照明科技有限公司 Battery capacity detection circuit
CN105891728A (en) * 2016-06-23 2016-08-24 浪潮电子信息产业股份有限公司 Method for batch testing of voltage of CMOS batteries of mainboard
CN111123363A (en) * 2018-10-31 2020-05-08 佛山市顺德区美的电热电器制造有限公司 Neglected loading detection circuit and cooking utensil
TWI726332B (en) * 2019-06-10 2021-05-01 神雲科技股份有限公司 Motherboard battery detection device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101769954B (en) * 2010-01-27 2012-08-22 中山市嘉科电子有限公司 Voltage detecting circuit for multiple serial batteries
CN102841241A (en) * 2011-06-23 2012-12-26 神讯电脑(昆山)有限公司 Voltage detection circuit
CN103323777A (en) * 2012-03-21 2013-09-25 海洋王(东莞)照明科技有限公司 Battery capacity detection circuit
CN105891728A (en) * 2016-06-23 2016-08-24 浪潮电子信息产业股份有限公司 Method for batch testing of voltage of CMOS batteries of mainboard
CN111123363A (en) * 2018-10-31 2020-05-08 佛山市顺德区美的电热电器制造有限公司 Neglected loading detection circuit and cooking utensil
TWI726332B (en) * 2019-06-10 2021-05-01 神雲科技股份有限公司 Motherboard battery detection device

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20071114

Termination date: 20120630