CN1997917A - Building up diffractive optics by structured glass coating - Google Patents
Building up diffractive optics by structured glass coating Download PDFInfo
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- CN1997917A CN1997917A CNA2005800188414A CN200580018841A CN1997917A CN 1997917 A CN1997917 A CN 1997917A CN A2005800188414 A CNA2005800188414 A CN A2005800188414A CN 200580018841 A CN200580018841 A CN 200580018841A CN 1997917 A CN1997917 A CN 1997917A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1876—Diffractive Fresnel lenses; Zone plates; Kinoforms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1876—Diffractive Fresnel lenses; Zone plates; Kinoforms
- G02B5/188—Plurality of such optical elements formed in or on a supporting substrate
- G02B5/1885—Arranged as a periodic array
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Abstract
The invention relates to optical parts, and in particular to a process for applying an optically active structuring (7) to a substrate (1), and also to a component produce using a process of this type. The process for applying an optically active structuring to a substrate comprises in particular photolithographic techniques and the deposition of material via physical vapor deposition processes.
Description
Technical field
The present invention relates generally to optical element, relate in particular to and a kind ofly be used to apply the photolytic activity structuring to on-chip method that comprise the photoactive element of photolytic activity structure, this photolytic activity structure is focusing structure preferably, and the assembly that utilizes this type method to make.
Background technology
As an example in JP 62066204, we disclose a kind of Fresnel lens and manufacture method thereof.One after the other be laminated to these lens of making on the substrate by a plurality of films, thereby obtain the Fresnel type lens.Require in every layer accurately lamination owing to make optical texture, and can not disturb the optical property of making lens arrangement, this is a time-consuming and expensive process.
DE 43 38 969 C2 disclose a kind of method that is used to make inorganic diffraction element, especially make by means of etching glass.The coating of substrate is to utilize to cover the mask that does not need etching area, described mask can anti-etching medium and corresponding to the embossment structure of making, and by means of etching process, required embossment can be formed on the substrate region that does not have masked covering, if desired, can remove this mask subsequently.Particularly for glass, only can realize low etch-rate, this also is a time-consuming and expensive process.
So, the purpose of this invention is to provide a kind of method, especially diffraction optical element that is used to improve the optical element making, and improved photoactive element be provided.
Summary of the invention
By means of the method according to independent claims, photoactive element and assembly, and hybrid lens utilize simple especially method to achieve this end.Useful improvement constitutes the theme of each dependent claims.
Apply the photolytic activity structuring according to the present invention and comprise the structuring that utilizes mask, the steps include: to on-chip method
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
The described coating method of photoactive layer or deposition process provide the method for the described photoactive layer of a kind of quick formation, because can realize being to the maximum the high gas deposition speed of 4 μ m/min, this speed is higher than several times of existing sputter rates, and utilizes this method to realize above-mentioned purpose.Be used to apply the possible material of photoactive layer, especially possible glass material is to provide in following description of drawings part.
In addition, along forming accurate structure on the horizontal direction of described substrate surface and the vertical direction.The suitable gas deposition parameter of choosing glass preferably is used to optics and the thermomechanical property set, can apply structurized glassy layer thickness and be about 0.1 μ m and be to the maximum between the 1mm.
Except high rate of sedimentation, another advantage of gas deposition be substrate than low thermal stress, it can utilize photoresist to form first coating.The step of coated substrates is by means of spin coated, spray, electro-deposition and/or by means of depositing at least a photosensitive film against corrosion realizes.The step of removing resist layer realizes according to this sample loading mode, also removes the one deck at least that has been applied on the resist layer.In addition, the step of photolithographic structuresization comprises: mask exposure and development subsequently.
In one embodiment, applying step comprises: by means of electron beam PIAD process, utilize photoactive layer to apply pre-structurized substrate.In this type procedure, the ion beam that guiding adds is to the substrate of needs coating.Described ion beam brings out the release of loosel bound particle on the substrate surface, and it finally causes, and the intensive and defective of photoactive layer reduces layer on the substrate.
By changing the orientation of substrate, can apply the several side of this substrate, thereby allow to make accurate photoactive element or assembly with respect to paint-on source.Especially, apply described photolytic activity structuring at least one side of the top of the bottom of described substrate and/or described substrate and/or described substrate.Possible substrate material is to describe in following description of drawings part.
The assembly or the photoactive element that depend on formation, in one embodiment, said process can only relate to single and repeat following step:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
The required optical property that depends on photoactive element, for example, its refractive index can apply photoactive layer according to this sample loading mode, and this active layer comprises along perpendicular to the direction of substrate surface and/or along the constant composition of layer of the direction that is parallel to substrate surface and/or the composition of layer of variation.Partly provide the more details relevant in the description of the drawings with the change layer composition.
In a specific embodiment, the feature of said process is repeatedly to repeat following step:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
The thickness of photolytic activity ground floor is being about 0.1 μ m and is being to the maximum between the 1mm.The structure that depends on the photolytic activity ground floor, that is, the photolytic activity ground floor is to be formed by at least one structure, each structure width of photolytic activity ground floor, is more preferably approximately less than 10 μ m preferably approximately less than 20 μ m approximately less than 50 μ m.The outward appearance that depends on the photolytic activity ground floor for example, is used to form Fresnel lens or Fresnel type lens, and it is essential that the structurized combination of different in width is arranged.This is for a more detailed description in following description of drawings part.
As mentioned above, depend on the optical property that photoactive element is required, for example, its refractive index is utilized photoactive layer to apply pre-structurized substrate and comprise identical materials or different materials in every layer.In addition, can apply photoactive layer in such a manner, this active layer comprises the composition of layer of the direction variation that is parallel to substrate surface along direction and/or edge perpendicular to substrate surface.
In one embodiment, utilize the glass coating material of making in the PVD process, make photoactive layer, especially,, apply described photoactive layer wherein by means of the electron beam evaporation in the PVD process.In addition, by means of the electron beam evaporation in the PIAD process, also can apply described photoactive layer.
Except above-mentioned process, the invention still further relates to a kind of photoactive element, it comprises substrate and at described on-chip at least one photolytic activity ground floor, wherein ground floor is to be made by at least a material that is selected from glass or metal, and photolytic activity structure, preferably focusing structure arranged.
Described photolytic activity ground floor is applied to the bottom of described substrate and/or the top of described substrate.In one embodiment, the photolytic activity ground floor comprises the material composition of the direction variation that is parallel to substrate surface along direction and/or edge perpendicular to substrate surface.
For exquisite photoactive element is provided, for example, Fresnel lens or Fresnel type lens, or on-chip photo structure, described photoactive element is the array that several photoactive layers are arranged, and wherein the array of several photoactive layers comprises identical materials or different materials in every photoactive layer.
The feature of photolytic activity structure is its manufacture method in the photoactive element, utilizes the process that comprises photoetching mask structureization, the steps include:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
The coating of substrate is by means of spin coated, sprays electro-deposition and/or realize by means of at least one photosensitive film against corrosion of deposition.Remove resist layer in such a manner, also remove the one deck at least that is applied on the resist layer.
On photoactive element,, utilize photoactive layer to apply pre-structurized substrate by means of electron beam PIAD process.Photolithographic structuresization comprises: mask exposure and development subsequently.
Depend on required character, repeat following step by single and make photoactive element:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
Or in another embodiment, make photoactive element by repeatedly repeating following step:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
By means of the PVD process, the coating material that utilizes glass to make is made photoactive layer, especially, wherein by means of the electron beam evaporation in the PVD process, makes photoactive layer.In another embodiment, by means of the electron beam evaporation in the PIAD process, make photoactive layer.
Preferably, photoactive element is or comprises Fresnel lens or Fresnel type lens.
In addition, the present invention includes a kind of assembly that the photolytic activity structure is arranged, preferably, wherein make this structure by means of the method that the said process feature is arranged by glass and/or metal focusing structure.In addition, can utilize synthetic material, especially transparent synthetic material.
In addition, the present invention includes a kind of assembly that the photolytic activity structure is arranged, preferably, wherein make this structure by means of the method that the said process feature is arranged by glass and/or metal focusing structure.Preferably, this assembly is or comprises Fresnel lens or Fresnel type lens.
In addition, the present invention also comprises a kind of hybrid lens that substrate and photolytic activity structure are arranged, focusing structure preferably, and this structure utilizes said process to make.
On the basis of preferred embodiment and with reference to accompanying drawing, we have explained the present invention in more detail.The feature of different embodiment can make up mutually.Identical reference number is represented identical or similar parts in the accompanying drawing.
Description of drawings
The process steps that Figure 1A to 1E utilizes the sectional view explanation to relate in structurized coated substrates,
Fig. 2 A and 2B represent the modification with reference to the illustrated process steps of Fig. 1 C to 1E,
The preferred embodiment process steps that Fig. 3 A to 3C utilizes the sectional view explanation to relate in structurized coated substrates,
Fig. 4 represents the assembly planimetric map according to the preferred embodiment of the present invention,
Fig. 5 represents to apply the substrate embodiment of multilayer,
Fig. 6 represents to be coated with the substrate embodiment of differing heights multilayer,
Fig. 7 represents to apply the substrate embodiment of multilayer, and it comprises different materials, the material that replaces in each layer especially,
Fig. 8 represents to apply the substrate embodiment of multilayer, and it comprises the material that replaces in just structurized different materials, the especially structure,
The planimetric map of Fig. 9 presentation graphs 8,
Figure 10 and 11 is illustrated in the top of substrate and other substrates embodiment of bottom coating multilayer,
Figure 12 to 15 expression is according to the assembly planimetric map of other preferred embodiments of the present invention.
Embodiment
Following content is at first discussed Figure 1A to 1E, the process steps that these are desired to make money or profit and relate in making the structuring substrate according to first embodiment of the invention with the sectional view explanation.In order to make the structuring coating, at first, apply on the surface 2 that first coating 3 needs to apply in the substrate 1, shown in Figure 1A.Preferably, substrate 1 is connected in the wafer combination other substrate.Preferably, first coating 3 is to be formed by photosensitive resist layer.This substrate comprises at least and is selected from following a kind of material: glass, pottery, semiconductor material, especially silicon, semiconducting compound, metal, metal alloy, plastics, or the combination of above-mentioned material.
Figure 1B is illustrated in the substrate sectional view after another process steps.In this step, structuring has been introduced in first coating 3.These structurings produce negative structuring 5, and it in planimetric map is and final structuring coating complementation.This structuring forms in such a manner, and the zone 6 on the surface 2 of the substrate 1 that need apply is unlapped.
Preferably, form this structuring by means of photoetching process, for this purpose, for example, first coating 3 comprises a kind of photoresist, by means of exposure and development, introduces negative structuring 5 in photoresist.
By means of spin coated, to spray, electro-deposition and/or by means of the photosensitive film against corrosion of deposition applies first coating 3 of substrate 1, and the coating of photosensitive resist layer is especially arranged, for example, photosensitive varnish.The another kind of possibility that forms negative structuring 5 is the coating by means of the structuring printing process, for example, and photomechanical production (serigraphy) printing or ink jet printing.
Fig. 1 C is illustrated in substrate, the especially photoactive layer after the step of deposition glass structure layer 7 on the surface 2 of substrate 1, existing first coating 3 on substrate 1.By means of electron beam evaporation to comprising negative structuring 5 and applying the substrate 1 of first coating 3, can realize this deposition, preferably, layer 7 comprises metal or gas deposition glass, wherein deposition be by means of the electron beam evaporation coating to the substrate 1 of coating first coating 3, first coating 3 comprises negative structuring 5.Layer 7 covers unlapped regional 6 and first coating 3.
According to a kind of improvement of the present invention, by means of plasma ion assisted deposition, also can realize layer 7 deposition, in order that make intensive especially and do not have the layer of defective.According to the present invention, by means of PVD, PIVCD, or, also can advantageously make metal level by means of electroplating process.
People prove that it is particularly advantageous that the gas deposition glass of following percentage by weight composition is arranged:
The composition percentage by weight
SiO
2 75-85％
B
2O
3 10-15％
Na
2O 1-5％
Li
2O 0.1-1％
K
2O 0.1-1％
Al
2O
3 1-5％
Such preferred gas deposition glass is the glass 8329 that Schott makes, and it has following composition:
The composition percentage by weight
SiO
2 84.1％
B
2O
3 11.0％
Na
2O ≈2.0％
K
2O ≈ 0.3%} ( 3.3% in this layer)
Li
2O ≈0.3％」
Al
2O
32.6% (in this layer＜0.5%)
Resistance is about 10
10Ω/cm (under 100 ℃).In addition, under its pure form, the refractive index of this glass is about 1.470.
DIELECTRIC CONSTANT is about 4.7 (at 25 ℃, under the 1MHz), and tan δ is about 45 * 10
-4(at 25 ℃, under the 1MHz).The vapor deposition process of this system component and different volatility produce different slightly stoichiometries between target material and sedimentary deposit.In the parenthetic deviation of pointing out in the sedimentary deposit.
The composition that the suitable gas deposition glass of another combination has following percentage by weight to represent:
The composition percentage by weight
SiO
2 65-75％
B
2O
3 20-30％
Na
2O 0.1-1％
Li
2O 0.1-1％
K
2O 0.5-5％
Al
2O
3 0.5-5％
Preferred gas deposition glass is the glass G018-189 that Schott makes in this group, and it has following composition:
The composition percentage by weight
SiO
2 71％
B
2O
3 26％
Na
2O 0.5％
Li
2O 0.5％
K
2O 1.0％
Al
2O
3 1.0％
The preferred glass that uses has the character of listing in the tabulation down:
| Character | 8329 | G018-189 |
| α 20-300[10 -6K -1] | 2.75 | 3.2 |
| Density (g/cm 3) | 2.201 | 2.12 |
| Transition temperature [℃] | 562 | 742 |
| Refractive index n d | 1.469 | 1.465 |
| Hydrolysis rank according to ISO 719 | 1 | 2 |
| Acid resistance rank according to DIN 12 | 1 | 2 |
| 116 | ||
| Alkali resistance rank according to DIN 52322 | 2 | 3 |
| DIELECTRIC CONSTANT (25 ℃) | 4.7(1MHz) | 3.9(40GHz) |
| Tanδ(25℃) | 45*10 -4(1MHz) | 26*10 -4(40GHz) |
Choosing of above-mentioned glass is just as an example, is not limited to above-mentioned glass.
Advantageously, layer 7 formation is only from the material in a source.Therefore, can realize the high duplication of layer 7.In addition, can avoid utilizing several sources to cause the stoichiometric unexpected variation of layer.
According to another kind of improvement the of the present invention, utilize two sources also can realize the deposition of layer 7 at least.The operation of deposition is to cover each source by adaptability, is used to control each derived components and sedimentary deposit 7 components in proportions.
At least utilize two sources can advantageously make such layer, this layer edge is perpendicular to the direction of substrate surface and/or along the vicissitudinous composition of layer of direction that is parallel to substrate surface.
By means of the running parameter that changes a source or by means of the different deposition process of combination, also can realize the variation of this composition of layer.For example, these processes comprise physical vapor deposition, especially electron beam evaporation or sputter, the chemical vapor deposition that chemical vapor deposition or plasma bring out.
In this manner, material character, for example, and temperature coefficient, or optical property, for example, refractive index or Abbe coefficient can be adapted to its intended purposes.
Fig. 1 D is illustrated in and removes first coating, 3 steps substrate afterwards.In this process modification, remove coating and be that complanation by coated surfaces realizes.For this purpose, the surface of plane lapping coating, until first coating of removing on the layer 7, therefore, first coating 3 below it becomes unlapped once more, thereby can directly contact this layer.
Fig. 1 E is illustrated in and removes first coating 3 process steps afterwards.Because in the negative structuring of gas deposition layer 7 to first coating 3, and remove first coating 3 after removing it, positive structured layer 7 finally is retained on the substrate.The structure 9 of positive structured layer 7 covers the initial zone 6 that does not cover or do not covered by first coating 3.
For example, by the dissolving in suitable solvent or by means of wet-chemical or dry chemical etch, can remove negative structurized first coating 3.Decoating also can advantageously utilize burning or the oxidation in oxygen plasma.
Positive structured layer 7 comprises a kind of structure 9 or several structure 9.According to the present invention, described structure 9 can comprise different materials, along the different composition of direction that direction and/or edge perpendicular to substrate surface are parallel to substrate surface, different optical properties, different sizes, that is, different diameters, width or height, or thickness, or different physical dimensions, that is, and different shapes.
Can be applicable to make the optical element of various heterogeneitys and/or different size according to method of the present invention.
The structure 9 of described structure 9 or positive structured layer 7 have an appointment height or the thickness of 0.1 μ m to 1mm, and the order of magnitude is less than 500 μ m, 200 μ m, 100 μ m, 50 μ m, diameter or the width of 20 μ m and/or 10 μ m.
In another embodiment, can deposit two kinds of different materials at least as the structure 9 of layer 7 to form positive structured layer 7.That is, every kind of structure 9 of positive structured layer 7 can comprise another kind of material according to the character of expection, especially its optical property.
Comprise the aberration that the combination of at least two kinds of glass of different optical character can correcting optical system.According to the present invention, in one deck, make up these at least two kinds of materials or in different interlayers, make up these at least two kinds of materials, can realize described combination.
Following description relates to Fig. 2 A and 2B, is used to explain the advantageous variant with reference to process steps shown in Fig. 1 D and the 1E.In this process modification, at first be to utilize structurized first coating 3 with preparation substrate 1, as illustrated when reference Figure 1A and the 1B.First coating 3 has negative structuring 5 once more, and it can utilize common lift-off technology to make, thereby stays the zone 6 of unlapped first surface 2.Similarly, layer 7 deposits to according to the method on the substrate surface of preparation, and for example, the deposition by means of the gas deposition or the metal level of gas deposition glass can realize this deposition.Yet in this case, the layer thickness of layer 7 is not chosen enough greatly and is made its embracing layer 7 fully.This is to realize that by the layer thickness of choosing layer 7 this thickness is less than the layer thickness of first coating 3.Fig. 2 A represents this state in this process.
Then, by means of the complanation shown in reference Fig. 1 C, without any need for removal operation, can directly remove first coating 3 because layer 7 is not completed into continuous cladding system, thereby keep in touch first coating 3.When removing first coating 3, can remove those zones that are positioned at first coating, 3 upper stratas 7, thereby remove those zones.Keep the result shown in Fig. 2 B once more, it is the structuring coating 7 that positive structure 9 is arranged.
According to the present invention, at least one side of substrate 1, can finish the making of positive structured layer 7, especially at the top 2 of substrate 1 and/or the bottom 4 of substrate 1.
Especially, for making exquisite optical element or photoactive element, for example, the Fresnel lens can also advantageously be carried out repeatedly above-mentioned process steps, therefore, can make multilayer structured.
Forming described each multilayer structured layer comprises and above-mentioned layer 7 identical character.Especially, every layer can include different materials of different nature, especially different optical properties.
Fig. 3 A represents that a special preferred embodiment is similar to the interstage of process shown in Figure 1B.This figure explanation is used to be manufactured with the negative structuring 5 of the non-overlay area 6 and the Fresnel lens in zone 51, the wherein coated photoresist of substrate.
The negative structuring 5 that is used to make the Fresnel lens comprises the uncovered area of central circular, and this zone is surrounded (see figure 4) by the uncovered area of annular concentric region shape.The uncovered area of described annular region shape is that less radius is that r1 and bigger radius are r2 by the area limiting of the concentric circles restriction of two different radiis, and the width of formation is w=r2-r1.Radius along with increasing increases r1 and r2 respectively, reducing apart from d between the width w of annular region and two the adjacent annular zones.
Can be applied to be manufactured with the Fresnel lens or the Fresnel type lens of various different sizes according to process of the present invention.The height of described negative structuring 5 is about 0.1 μ m to 10mm.The diameter order of magnitude of the uncovered area of described central circular is less than 500 μ m, 200 μ m, 100 μ m, 50 μ m, 20 μ m or 10 μ m.Have such numerical value apart from d between the width w of described annular region and the annular region, approximately less than 500 μ m, 200 μ m, 100 μ m, 50 μ m, 20 μ m and/or 10 μ m.
Fig. 3 B and 3C representation class are similar to the process steps of Fig. 2 A and 2B description, are used to form optical element embodiment or photoactive element, and wherein photoactive layer 71 is applied to whole surface.By means of removing process, resist layer zone 51 and photoactive layer 71 zones thereon, position are one after the other removed, and what stay is to form just structurized photoactive region 71.
The size of just structurized width or photoactive layer 71 is corresponding to the width of uncovered area.The height of photoactive layer 71 is to be subjected to the height of negative structuring 5 or the restriction of width, and its numerical value is about 0.1 μ m to 1mm.
Fig. 4 is illustrated in Fresnel lens arrangementization shown in lip-deep Fig. 3 C.
Especially,, also can advantageously repeatedly carry out above-mentioned process steps, therefore, can make multilayer structured in order to make the Fresnel lens.This draws in Fig. 5, and Fig. 5 represents the sectional view by multilayer Fresnel lens.In this typical embodiment, we apply the layer of three different designs, that is, and and ground floor 71, the second layer 72 and the 3rd layer 73.As shown in Figure 5, by progressively reducing the width of ground floor 71 structures to top level structure, top level structure is the 3rd layer of 73 structure, can produce the sawtooth pattern form, that is, and and sawtooth pattern structure and/or convex structure.Especially,, can make good sawtooth pattern form by reducing every layer the thickness and the number of increase layer, that is, and good sawtooth pattern structure and/or good convex structure.
In order to make the structuring coating, at first, apply first coating 3 to the surface 2 of substrate 1, surface 2 also is to need coating, shown in Figure 1A.Preferably, first coating 3 is to be made by photosensitive resist layer.
The positive structure that the first structuring coating 3 produces ground floor 71 to the end comprises photosensitive resist layer, and it preferably forms by means of spin coated.The positive structure that the second structuring coating produces the second layer 72 to the end also comprises photosensitive resist layer, and it preferably forms by means of injection.Another coating preferably forms by means of injection to another positive structured layer of generation.Especially, described ground floor 71, the described second layer 72, and/or described the 3rd layer 73 comprise photoactive layer.
Other optical elements of Fig. 6 to 11 expression embodiment, they are respectively the photoactive element embodiment of Fresnel lens or Fresnel type lens.In the Fresnel lens of Fig. 5, it is repeatedly multilayer structured to make that above-mentioned process steps is particularly conducive to execution.In Fig. 6 to 11, describe multilayer structured in each layer comprise photoactive layer.
Illustrated exemplary embodiments represents to comprise ground floor 71 among Fig. 6 to 8, a three-tier system of the second layer 72 and the 3rd layer 73, these three layers top 2 that is formed on substrate 1.
Fig. 6 illustrates a three- tier system 71,72,73, every layer positive structure 91,92,93,94 wherein, and 95,96 have different height.In detail, in ground floor 71, the height of positive structure 94 is lower than the height of positive structure 91; In the second layer 72, the height of positive structure 95 is lower than the height of positive structure 92; With in the 3rd layer 73, the height of positive structure 96 is lower than the height of positive structure 93.Especially, just structurized height is an alternate with respect to the height of adjacent positive structure in every layer.
Fig. 7 represents a kind of like this system, and its middle level 71,72,73 comprises different materials.In detail, ground floor 71 comprises first kind of material, and the second layer 72 comprises second kind of material, and the 3rd layer 73 comprises the third material.
Fig. 8 explains the example of a three- tier system 71,72,73, and its middle level 71,72,73 and positive structure 91,92,93,98,99,100 comprise different materials, especially, positive structure 91,92,93,98,99,100 material replaces.In detail, positive structure 91,92,93 is at every layer 71,72, comprises first kind of identical material in 73, and positive structure 98,99,100 is at every layer 71,72, comprises second kind of identical material in 73.
Fig. 9 illustrates Fresnel lens shown in Figure 8 or the structuring from the teeth outwards of Fresnel type lens.
In addition, the embodiment shown in Figure 10 and 11 represents a typical multilayer system, and three-tier system especially comprises: top ground floor 271, and the 3rd layer 273 at the top second layer 272 and top, they are formed on the top 2 of substrate 1; With bottom ground floor 471, the 3rd layer 473 of the bottom second layer 472 and bottom, they are formed on the bottom 4 of substrate 1.
Figure 10 illustrates such system, and wherein the layer system on the top 2 of substrate 1 is to form according to the layer system that Fig. 8 describes, and comprises first kind of material and second kind of material.Especially, positive structure 291,292,293,298,299,300 material replaces.In detail, positive structure 291,292,293 is at every layer 271,272, comprises first kind of identical material in 273, and positive structure 298,299,300 is at every layer 271,272, comprises second kind of identical material in 273.Three-tier system on the bottom 4 of substrate 1 comprises the positive structure 491,492,493,498,499,500 of different materials, especially, positive structure 491,492,493,498,499,500 material replaces.In detail, positive structure 491,492,493 is at every layer 471,472, comprises the third identical material in 473, and positive structure 498,499,500 is at every layer 471,472, comprises the 4th kind of identical material in 473.
A Figure 11 explanation three-tier system 271,272,273 on the top of substrate 1, every layer positive structure 291,292,293,301 wherein, 302,303 have different height and material.
Positive structure 291,292,293 comprises first kind of material, and positive structure 301,302,303 comprises second kind of material.In more detail, in ground floor 271, the height of positive structure 291 is greater than positive structure 301; In the second layer 272, the height of positive structure 292 is greater than positive structure 302; With in the 3rd layer 273, the height of positive structure 293 is greater than positive structure 303.Especially, the height of positive structure replaces for adjacent positive structure in every layer.Layer system on the bottom of substrate 4 is that the layer system on the bottom of describing in according to Figure 10 4 forms.
Figure 12 to 15 expression is according to the planimetric map of other preferred embodiment Fresnel lens of the inventive method making, and it can utilize said method to realize high degree of accuracy.
On substrate, can form a photoactive element at least, for example, Fresnel lens or Fresnel type lens.This is explanation in Figure 12 and 13, and wherein several Fresnel lens are formed on the substrate simultaneously, or are produced on the described substrate, for example, are produced on the wafer.
So the present invention describes a kind of method that is used to make diffraction optical element.
Method of the present invention is described in semiconductor, glass, and the structuring that forms glass and metal level on pottery and the plastic substrate is used.
By means of the resist layer photoetching method, can realize the structuring of each layer.
Preferably, utilize the heat or the electron beam evaporation of suitable glasses system, can realize the glassy layer that insulate.
An advantage of said method is the glassy layer that applies insulation in room temperature under the highest 150 ℃, in above temperature range, unlikely substrate or the metal construction that applied is in the past caused any damage.
The suitable gas deposition parameter of choosing glass preferably is used to optics and the thermo-mechanical property set, in this manner, can apply the structuring glassy layer that thickness is about 0.1 μ m and is 1mm to the maximum.
For many years, be well-known by means of the vapor deposition process of electron beam, but it is mainly used in the machinery and the optical surface of plastic/glass glasses and handle.
The glass that Schott Glas is provided for this purposes has 30 years approximately.
According to the tables of data of known gas deposition glass 8329 (degassing Duran), we know that high gas deposition speed is 4 μ m/min to the maximum, and are confirmed by the technology consultation of sputter equipment user/manufacturer.
This speed is higher than several times of known sputter rates, and can utilize this method to realize above-mentioned purpose.
Used the sputtering layer made by the unit piece system (SiO preferably in the past
2), its sputter rate is the several nanometers of per minute.
Except high rate of sedimentation, another advantage of gas deposition is that substrate bears lower thermal stress, and it can utilize photoresist to form first coating.
For form structurized glassy layer on substrate, following parameter is preferred:
The surfaceness of substrate:＜50 μ m
BIAS temperature when evaporation: 100 ℃ of ≈
Pressure when evaporation: 10
-5Mbar
The CTE of gas deposition glass and substrate is consistent.
Glass should have corresponding optical signature data.
For substrate such as silicon wafer or glass, for example, Borofloat 33, according to existing knowledge, utilize known SCHOTT gas deposition glass (8329, G018-189) (consult tables of data), can satisfy all these requirements, wherein above-mentioned substrate is adopted suitable method, for example, electron beam evaporation.
Utilize other suitable gas deposition glass, can be applied to this method other substrate and organic and inorganic semiconductor.
The professional obviously knows, under the condition that does not depart from content of the present invention disclosed herein, can do various changes and variation to above-mentioned method and apparatus.
Claims (38)
1. one kind is used to apply the photolytic activity structuring to on-chip method, comprises the structuring that utilizes mask, and its step is,
Utilize photosensitive resist layer coated substrates,
The structuring of photoetching applied layer,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
2. according to the process of claim 1 wherein that the step of coated substrates is by means of spin coated, spray, electro-deposition and/or by means of depositing at least a photosensitive film against corrosion realizes.
3. according to the method for claim 1 or 2, wherein the photolytic activity structuring is applied to the bottom of described substrate and/or the top of described substrate.
4. according to any one method in the above claim, the step of wherein removing resist layer realizes according to this sample loading mode, also removes the one deck at least that has been applied on the resist layer.
5. according to any one method in the above claim, wherein applying step comprises: by means of electron beam PIAD process, utilize photoactive layer to apply pre-structurized substrate.
6. according to any one method in the above claim, wherein the photolithographic structures step comprises: mask exposure and development subsequently.
7. according to any one method in the above claim, this method relates to single and repeats following step:
Utilize photosensitive resist layer coated substrates,
The structuring of photoetching applied layer,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
8. according to any one method in the above claim, wherein photoactive layer applies according to this sample loading mode, and this active layer comprises the composition of layer of the direction variation that is parallel to substrate surface along direction and/or edge perpendicular to substrate surface.
9. according to any one method in the claim 1 to 6, it is characterized in that repeatedly repeating following step:
Utilize photosensitive resist layer coated substrates,
The structuring of photoetching applied layer,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
10. according to the method for claim 9, wherein utilize photoactive layer to apply pre-structurized substrate, this active layer comprises identical materials or different materials in every layer.
11. according to the method for claim 9 or 10, wherein photoactive layer applies according to this sample loading mode, this active layer comprises the composition of layer of the direction variation that is parallel to substrate surface along direction and/or edge perpendicular to substrate surface.
12. according to any one method in the above claim, wherein utilize coating material to make photoactive layer, this material is to make by the glass of PVD process.
13., wherein, apply photoactive layer by means of the electron beam evaporation in the PVD process according to any one method in the above claim.
14., wherein, apply photoactive layer by means of the electron beam evaporation in the PIAD process according to any one method in the above claim.
15. a photoactive element comprises substrate and at described on-chip at least one photolytic activity ground floor, wherein this ground floor is to make and photolytic activity structuring, preferably focusing structureization arranged by being selected from glass or the metal at least a material.
16. according to the photoactive element of claim 15, wherein the photolytic activity ground floor is applied to the bottom of described substrate and/or the top of described substrate.
17. according to any one photoactive element in the above claim, wherein the thickness of photolytic activity ground floor is about 0.1 μ m and is 1mm to the maximum.
18. according to any one photoactive element in the above claim, wherein the width of photolytic activity ground floor is approximately less than 50 μ m.Be preferably less than 20 μ m, be more preferably less than 10 μ m.
19. according to any one photoactive element in the above claim, wherein the photolytic activity ground floor comprises the material composition of the direction variation that is parallel to substrate surface along direction and/or edge perpendicular to substrate surface.
20. according to any one photoactive element in the above claim, wherein utilize the method that comprises photoetching mask structureization to make the photolytic activity structuring, the steps include:
Utilize photosensitive resist layer coated substrates,
The structuring of photoetching applied layer,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
21. according to any one photoactive element in the above claim, wherein coated substrates is by means of spin coated, spray, electro-deposition and/or by means of depositing at least a photosensitive film against corrosion realizes.
22. according to the photoactive element of claim 20 or 21, wherein remove resist layer in such a manner, also remove the one deck at least that has been applied on the resist layer.
23.,, utilize photoactive layer to apply pre-structurized substrate wherein by means of electron beam PIAD process according to any one photoactive element in the claim 20 to 22.
24. according to any one photoactive element in the claim 20 to 23, wherein photolithographic structuresization comprises: mask exposure and development subsequently.
25. according to any one photoactive element in the above claim is that the following step of single repetition is made:
Utilize photosensitive resist layer coated substrates,
The structuring of photoetching applied layer,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
26. according to any one photoactive element in the claim 15 to 24 is repeatedly to repeat following step to make:
Utilize photosensitive resist layer coated substrates,
The structuring of photoetching applied layer
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply pre-structurized substrate, this active layer comprise at least be selected from material that glass and metal constitute and
Remove resist layer.
27. according to any one photoactive element in claim 15 to 24 or 26, wherein photoactive element is the array that several photoactive layers are arranged.
28. according to any one photoactive element in the above claim, wherein the array of several photoactive layers comprises identical materials or different materials in each photoactive layer.
29. according to any one photoactive element in the above claim, wherein utilize the glass coating material of making in the PVD process, make photoactive layer.
30., wherein, apply photoactive layer by means of the electron beam evaporation in the PVD process according to any one photoactive element in the above claim.
31., wherein, apply photoactive layer by means of the electron beam evaporation in the PIAD process according to any one photoactive element in the above claim.
32. according to any one photoactive element in the above claim is the Fresnel lens.
33. one kind has the structurized assembly of photolytic activity, the focusing structureization of making by glass preferably, and wherein this structuring is to utilize the method for feature in the requirement 1 of having the right to make.
34. one kind has the structurized assembly of photolytic activity, the focusing structureization that is made of metal preferably, and wherein this structuring is to utilize the method for feature in the requirement 1 of having the right to make.
35. one kind has the structurized assembly of photolytic activity, preferably by glass and metal focusing structureization, wherein this structuring is to utilize the method for feature in the requirement 1 of having the right to make.
36. one kind has the structurized assembly of photolytic activity, preferably by glass and/or metal focusing structureization, wherein this structuring is to utilize the method for feature in the requirement 1 of having the right to make.
37. according to any one assembly in the above claim is the Fresnel lens.
38. one kind has substrate and the structurized hybrid lens of photolytic activity, focusing structureization preferably, and this structuring is to utilize to make according to the method for claim 1.
Applications Claiming Priority (3)
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|---|---|---|---|
| US57837704P | 2004-06-09 | 2004-06-09 | |
| US60/578,377 | 2004-06-09 | ||
| DE102004059252.7 | 2004-12-08 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101713100A Division CN102707351A (en) | 2004-06-09 | 2005-06-08 | The producing of diffraction optical element with structured glass coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1997917A true CN1997917A (en) | 2007-07-11 |
Family
ID=38178361
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800188414A Pending CN1997917A (en) | 2004-06-09 | 2005-06-08 | Building up diffractive optics by structured glass coating |
| CN2012101713100A Pending CN102707351A (en) | 2004-06-09 | 2005-06-08 | The producing of diffraction optical element with structured glass coating |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101713100A Pending CN102707351A (en) | 2004-06-09 | 2005-06-08 | The producing of diffraction optical element with structured glass coating |
Country Status (3)
| Country | Link |
|---|---|
| CN (2) | CN1997917A (en) |
| DE (2) | DE202004019052U1 (en) |
| TW (1) | TW200604576A (en) |
Cited By (2)
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| CN104330840A (en) * | 2014-07-07 | 2015-02-04 | 中国空空导弹研究院 | Multi-step micro-lens production method and optical element step production method |
| CN109642966A (en) * | 2016-08-12 | 2019-04-16 | 马克斯-普朗克科学促进学会 | The full material Fresnel zone chip arrays of high-resolution and its manufacturing process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005045197B4 (en) * | 2005-09-21 | 2010-12-09 | Schott Ag | Process for producing a hybrid optical lens |
| JP2017508177A (en) * | 2014-01-24 | 2017-03-23 | スリーディー グラス ソリューションズ，インク３Ｄ Ｇｌａｓｓ Ｓｏｌｕｔｉｏｎｓ，Ｉｎｃ | Method for fabricating photoactive substrates for microlenses and arrays |
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| KR20180134868A (en) | 2016-02-25 | 2018-12-19 | 3디 글래스 솔루션즈 인코포레이티드 | A photoactive substrate for fabricating 3D capacitors and capacitor arrays |
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| DE102016116749A1 (en) | 2016-09-07 | 2018-03-08 | Osram Opto Semiconductors Gmbh | DIFFACTIVE OPTICAL ELEMENT AND METHOD FOR PRODUCING A DIFFERENT OPTICAL ELEMENT |
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| KR20220164800A (en) | 2020-04-17 | 2022-12-13 | 3디 글래스 솔루션즈 인코포레이티드 | broadband inductor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6593687B1 (en) * | 1999-07-20 | 2003-07-15 | Sri International | Cavity-emission electroluminescent device and method for forming the device |
| US6946238B2 (en) * | 2001-06-29 | 2005-09-20 | 3M Innovative Properties Company | Process for fabrication of optical waveguides |
-
2004
- 2004-12-08 DE DE200420019052 patent/DE202004019052U1/en not_active Expired - Lifetime
- 2004-12-08 DE DE200410059252 patent/DE102004059252A1/en not_active Ceased
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2005
- 2005-06-08 CN CNA2005800188414A patent/CN1997917A/en active Pending
- 2005-06-08 CN CN2012101713100A patent/CN102707351A/en active Pending
- 2005-06-09 TW TW094119028A patent/TW200604576A/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104330840A (en) * | 2014-07-07 | 2015-02-04 | 中国空空导弹研究院 | Multi-step micro-lens production method and optical element step production method |
| CN104330840B (en) * | 2014-07-07 | 2016-05-04 | 中国空空导弹研究院 | A kind of many steps lenticule preparation method and optical element step preparation method |
| CN109642966A (en) * | 2016-08-12 | 2019-04-16 | 马克斯-普朗克科学促进学会 | The full material Fresnel zone chip arrays of high-resolution and its manufacturing process |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200604576A (en) | 2006-02-01 |
| DE202004019052U1 (en) | 2005-10-27 |
| DE102004059252A1 (en) | 2006-01-19 |
| CN102707351A (en) | 2012-10-03 |
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