CN102707351A - The producing of diffraction optical element with structured glass coating - Google Patents
The producing of diffraction optical element with structured glass coating Download PDFInfo
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- CN102707351A CN102707351A CN2012101713100A CN201210171310A CN102707351A CN 102707351 A CN102707351 A CN 102707351A CN 2012101713100 A CN2012101713100 A CN 2012101713100A CN 201210171310 A CN201210171310 A CN 201210171310A CN 102707351 A CN102707351 A CN 102707351A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1876—Diffractive Fresnel lenses; Zone plates; Kinoforms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1876—Diffractive Fresnel lenses; Zone plates; Kinoforms
- G02B5/188—Plurality of such optical elements formed in or on a supporting substrate
- G02B5/1885—Arranged as a periodic array
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Abstract
The invention relates to an optical element, especially relates to a method of applying a photoactive structure on a substrate, and an assembly produced with the method. The method comprises photolithography and material deposition by means of physical vapor deposition process.
Description
The application is to be June 8, application number in 2005 the dividing an application for the application for a patent for invention of " utilizing structurized glass coating to make diffraction optical element " that be 200580018841.4 (international application no is PCT/EP2005/006140), denomination of invention the applying date.
Technical field
The present invention relates generally to optical element, relate in particular to, a kind ofly be used to apply the photolytic activity structuring to on-chip method, comprise the photoactive element of photolytic activity structure, this photolytic activity structure is focusing structure preferably, and the assembly that utilizes this type method to make.
Background technology
An example as in JP 62066204 discloses a kind of Fresnel lens and manufacturing approach thereof.One after the other be laminated to these lens of making on the substrate through a plurality of films, thereby obtain the Fresnel type lens.Require in every layer accurately lamination owing to make optical texture, and interfere is not processed the optical property of lens arrangement, this is a time-consuming and expensive process.
DE 4338969C2 discloses a kind of method that is used to make inorganic diffraction element, specifically is to process by means of etching glass.The coating of substrate is to utilize to cover the mask that does not need etching area; Said mask can anti-etching medium and corresponding to the embossment structure of making, and by means of etching process, required embossment can be formed on the substrate region that does not have masked covering; If desired, can remove this mask subsequently.Particularly for glass, only can realize low etch-rate, this also is a time-consuming and expensive process.
So, the purpose of this invention is to provide a kind of method, especially diffraction optical element that is used to improve the optical element making, and improved photoactive element be provided.
Summary of the invention
By means of the method according to independent claims, photoactive element and assembly, and hybrid lens utilize simple especially method to achieve this end.Useful improvement constitutes the theme of each dependent claims.
Apply the photolytic activity structuring according to the present invention and comprise the structuring that utilizes mask, the steps include: to on-chip method
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply preparatory structurized substrate, this photoactive layer comprise the material that is selected from least in the group that constitutes by glass and metal and
Remove resist layer.
The said coating method of photoactive layer or deposition process provide the method for the said photoactive layer of a kind of quick formation; Because can realize being to the maximum the high gas deposition speed of 4 μ m/min; This speed is higher than several times of existing sputter rates, and utilizes this method to realize above-mentioned purpose.Be used to apply the possible material of photoactive layer, especially possible glass material is in following description of drawings part, to provide.
In addition, along forming accurate structure on the horizontal direction of said substrate surface and the vertical direction.The suitable gas deposition parameter of choosing glass preferably is used to optics and the thermomechanical property set, can apply structurized glassy layer thickness and be about 0.1 μ m and be to the maximum between the 1mm.
Except high rate of sedimentation, another advantage of gas deposition be substrate than low thermal stress, it can utilize photoresist to form first coating.The step of coated substrates is by means of spin coated, spray, electro-deposition and/or by means of depositing at least a photosensitive film against corrosion realizes.The step of removing resist layer realizes according to this sample loading mode, also removes at least one layer that has been applied on the resist layer.In addition, the step of photolithographic structuresization comprises: mask exposure and development subsequently.
In one embodiment, applying step comprises: by means of electron beam PIAD process, utilize photoactive layer to apply preparatory structurized substrate.In this type procedure, the ion beam that guiding adds is to the substrate of needs coating.Said ion beam brings out the release of loosel bound particle on the substrate surface, and it finally causes, and the intensive and defective of photoactive layer reduces layer on the substrate.
Through changing the orientation of substrate, can apply the several side of this substrate, thereby allow to make accurate photoactive element or assembly with respect to paint-on source.Especially, apply said photolytic activity structuring at least one side of the top of the bottom of said substrate and/or said substrate and/or said substrate.Possible substrate material is in following description of drawings part, to describe.
The assembly or the photoactive element that depend on formation, in one embodiment, said process can only relate to single and repeat following step:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply preparatory structurized substrate, this photoactive layer comprise the material that is selected from least in the group that constitutes by glass and metal and
Remove resist layer.
The required optical property that depends on photoactive element; For example; Its refractive index can apply photoactive layer according to this sample loading mode, and this active layer comprises along perpendicular to the direction of substrate surface and/or along the constant composition of layer of the direction that is parallel to substrate surface and/or the composition of layer of variation.Declaratives at accompanying drawing provide the more details relevant with the change layer composition.
In a concrete embodiment, the characteristic of said process is repeatedly to repeat following step:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply preparatory structurized substrate, this photoactive layer comprise the material that is selected from least in the group that constitutes by glass and metal and
Remove resist layer.
The thickness of photolytic activity ground floor is being about 0.1 μ m and is being to the maximum between the 1mm.The structure that depends on the photolytic activity ground floor, that is, the photolytic activity ground floor is to be formed by at least one structure, each structure width of photolytic activity ground floor, is more preferably approximately less than 10 μ m preferably approximately less than 20 μ m approximately less than 50 μ m.The outward appearance that depends on the photolytic activity ground floor for example, is used to form Fresnel lens or Fresnel type lens, and it is essential that the structurized combination of different in width is arranged.This makes more detailed description in following description of drawings part.
As stated, depend on the optical property that photoactive element is required, for example, its refractive index is utilized photoactive layer to apply preparatory structurized substrate and in every layer, is comprised identical materials or material different.In addition, can apply photoactive layer in such a manner, this active layer comprises the composition of layer of the direction variation that is parallel to substrate surface along direction and/or edge perpendicular to substrate surface.
In one embodiment, utilize the glass coating material of processing in the PVD process, make photoactive layer, especially,, apply said photoactive layer wherein by means of the electron beam evaporation in the PVD process.In addition, by means of the electron beam evaporation in the PIAD process, also can apply said photoactive layer.
Except above-mentioned process; The invention still further relates to a kind of photoactive element, it comprises substrate and at said on-chip at least one photolytic activity ground floor, wherein ground floor is to be processed by at least a material that is selected from glass or metal; And the photolytic activity structure is arranged, focusing structure is preferably arranged.
Said photolytic activity ground floor is applied to the bottom of said substrate and/or the top of said substrate.In one embodiment, the photolytic activity ground floor comprises the material composition of the direction variation that is parallel to substrate surface along direction and/or edge perpendicular to substrate surface.
For exquisite photoactive element is provided; For example, Fresnel lens or Fresnel type lens, or on-chip photo structure; Said photoactive element is the array that several photoactive layers are arranged, and wherein the array of several photoactive layers comprises identical materials or material different in every photoactive layer.
The characteristic of photolytic activity structure is its manufacturing approach in the photoactive element, utilizes the process that comprises photoetching mask structureization, the steps include:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply preparatory structurized substrate, this photoactive layer comprise the material that is selected from least in the group that constitutes by glass and metal and
Remove resist layer.
The coating of substrate is by means of spin coated, sprays electro-deposition and/or realize by means of at least one photosensitive film against corrosion of deposition.Remove resist layer in such a manner, also remove at least one layer that is applied on the resist layer.
On photoactive element,, utilize photoactive layer to apply preparatory structurized substrate by means of electron beam PIAD process.Photolithographic structuresization comprises: mask exposure and development subsequently.
Depend on required character, the step below repeating through single is made photoactive element:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply preparatory structurized substrate, this photoactive layer comprise the material that is selected from least in the group that constitutes by glass and metal and
Remove resist layer.
Or in another embodiment, make photoactive element through repeatedly repeating following step:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of electron beam PVD (electro beam physics gas deposition), utilize photoactive layer to apply preparatory structurized substrate, this photoactive layer comprise the material that is selected from least in the group that constitutes by glass and metal and
Remove resist layer.
By means of the PVD process, the coating material that utilizes glass to process is made photoactive layer, especially, wherein by means of the electron beam evaporation in the PVD process, makes photoactive layer.In another embodiment, by means of the electron beam evaporation in the PIAD process, make photoactive layer.
Preferably, photoactive element is or comprises Fresnel lens or Fresnel type lens.
In addition, the present invention includes a kind of assembly that the photolytic activity structure is arranged, preferably have, wherein make this structure by means of the method that the said process characteristic is arranged by glass and/or metal focusing structure.In addition, can utilize synthetic material, especially transparent synthetic material.
In addition, the present invention includes a kind of assembly that the photolytic activity structure is arranged, preferably have, wherein make this structure by means of the method that the said process characteristic is arranged by glass and/or metal focusing structure.Preferably, this assembly is or comprises Fresnel lens or Fresnel type lens.
In addition, the present invention also comprises a kind of hybrid lens that substrate and photolytic activity structure are arranged, and focusing structureization is preferably arranged, and this structure utilizes said process to process.
On the basis of preferred embodiment and with reference to accompanying drawing, we have explained the present invention in more detail.The characteristic of different embodiment can mutual combination.Identical reference number is represented identical or similar parts in the accompanying drawing.
Description of drawings
The process steps that Figure 1A to 1E utilizes the sectional view explanation in structurized coated substrates, to relate to,
Fig. 2 A and 2B represent the modification with reference to the illustrated process steps of Fig. 1 C to 1E,
The preferred embodiment process steps that Fig. 3 A to 3C utilizes the sectional view explanation in structurized coated substrates, to relate to,
Fig. 4 representes the assembly planimetric map according to the preferred embodiment of the present invention,
Fig. 5 representes to apply the substrate embodiment of multilayer,
Fig. 6 representes to be coated with the substrate embodiment of differing heights multilayer,
Fig. 7 representes to apply the substrate embodiment of multilayer, and it comprises material different, the material that especially replaces in each layer,
Fig. 8 representes to apply the substrate embodiment of multilayer, and it comprises the material that replaces in just structurized different materials, the especially structure,
The planimetric map of Fig. 9 presentation graphs 8,
Figure 10 and 11 is illustrated in the top of substrate and other substrates embodiment that the bottom applies multilayer,
Figure 12 to 15 expression is according to the assembly planimetric map of other preferred embodiments of the present invention.
Embodiment
Following content is at first discussed Figure 1A to 1E, the process steps that these are desired to make money or profit and in making structurized substrate, relate to according to first embodiment of the invention with the sectional view explanation.In order to make structurized coating, at first, applying first coating 3 needs on the surface 2 of coating, shown in Figure 1A in substrate 1.Preferably, substrate 1 is connected in the wafer combination other substrate.Preferably, first coating 3 is to be formed by photosensitive resist layer.This substrate comprises at least a material in the group that is selected from following material formation: glass, pottery, semiconductor material, especially silicon, semiconducting compound, metal, metal alloy, plastics, or the combination of above-mentioned material.
Figure 1B is illustrated in the substrate sectional view after another process steps.In this step, structuring has been introduced in first coating 3.These structures produce negative structuring 5, and it is complementary with final structurized coating in planimetric map.This structuring forms in such a manner, and the zone 6 on the surface 2 of the substrate 1 that need apply is unlapped.
Preferably, form this structuring by means of photoetching process, for this purpose, for example, first coating 3 comprises a kind of photoresist, by means of exposure and development, introduces negative structuring 5 in photoresist.
By means of spin coated, to spray, electro-deposition and/or by means of the photosensitive film against corrosion of deposition applies first coating 3 of substrate 1, and the coating of photosensitive resist layer is especially arranged, for example, photosensitive varnish.The another kind of possibility that forms negative structuring 5 is the coating by means of structurized printing process, for example, and photomechanical production (serigraphy) printing or ink jet printing.
Fig. 1 C is illustrated in substrate, the especially photoactive layer after the step of deposition glass structure layer 7 on the surface 2 of substrate 1, existing first coating 3 on substrate 1.By means of electron beam evaporation to comprising negative structuring 5 and applying the substrate 1 of first coating 3; Can realize this deposition; Preferably; Layer 7 comprises metal or gas deposition glass, wherein deposition be by means of the electron beam evaporation coating to the substrate 1 that applies first coating 3, first coating 3 comprises negative structuring 5.Layer 7 covers unlapped regional 6 and first coating 3.
According to a kind of improvement of the present invention, by means of plasma ion assisted deposition, also can realize layer 7 deposition, in order that process intensive especially and do not have the layer of defective.According to the present invention, by means of PVD, PICVD, or, also can advantageously process metal level by means of electroplating process.
People prove that it is particularly advantageous that the gas deposition glass of following percentage by weight composition is arranged:
Such preferred gas deposition glass is the glass 8329 that Schott makes, and it has following composition:
Resistance is about 10
10Ω/cm (under 100 ° of C).In addition, under its pure form, the refractive index of this glass is about 1.470.
DIELECTRIC CONSTANTS is about 4.7 (at 25 ° of C, under the 1MHz), and tan δ is about 45 * 10
-4(at 25 ° of C, under the 1MHz).The vapor deposition process of this system component and different volatility produce different slightly stoichiometries between target material and sedimentary deposit.In the parenthetic deviation of pointing out in the sedimentary deposit.
The composition that the gas deposition glass of another appropriate has following percentage by weight to represent:
Preferred gas deposition glass is the glass G018-189 that Schott makes in this group, and it has following composition:
The preferred glass that uses especially has the character of listing in the tabulation down:
| Character | 8329 | G018-189 |
| α 20-300[10 -6K -1] | 2.75 | 3.2 |
| Density (g/cm 3） | 2.201 | 2.12 |
| Transition temperature [° C] | 562 | 742 |
| Refractive index n d | 1.469 | 1.465 |
| Hydrolysis rank according to ISO 719 | 1 | 2 |
| Acid resistance rank according to DIN 12 | 1 | 2 |
| 116 | ||
| Alkali resistance rank according to DIN 52322 | 2 | 3 |
| DIELECTRIC CONSTANTS (25 ° of C) | 4.7(1MHz) | 3.9(40GHz) |
| Tanδ（25°C） | 45*10 -4(1MHz) | 26*10 -4(40GHz) |
Choosing of above-mentioned glass is just as an example, is not limited to above-mentioned glass.
Advantageously, layer 7 formation is only from the material in a source.Therefore, can realize the high duplication of layer 7.In addition, can avoid utilizing several sources to cause the stoichiometric non-expection of layer to change.
According to another kind of improvement the of the present invention, utilize two sources also can realize the deposition of layer 7 at least.The operation of deposition is to cover each source through adaptability, is used to control each derived components and sedimentary deposit 7 components in proportions.
At least utilize two sources can advantageously make such layer, this layer edge is perpendicular to the direction of substrate surface and/or along the vicissitudinous composition of layer of direction that is parallel to substrate surface.
By means of the running parameter that changes a source or by means of the different deposition process of combination, also can realize the variation of this composition of layer.For example, these processes comprise PVD, especially electron beam evaporation or sputter, the chemical vapor deposition that chemical vapor deposition or plasma bring out.
In this manner, material character, for example, and temperature coefficient, or optical property, for example, refractive index or Abbe coefficient can be adapted to its intended purposes.
Fig. 1 D is illustrated in and removes first coating, 3 steps substrate afterwards.In this process modification, remove coating and be that complanation through coated surfaces realizes.For this purpose, the surface that plane lapping applies, until first coating of removing on the layer 7, therefore, first coating 3 below it becomes unlapped once more, thereby can directly contact this layer.
Fig. 1 E is illustrated in and removes first coating 3 process steps afterwards.Because in the negative structuring of gas deposition layer 7 to first coating 3, and after removing it, remove first coating 3, just structurized layer 7 finally is retained on the substrate.The structuring 9 of positive structured layer 7 covers and does not cover at first or not by first coating, 3 region covered 6.
For example, through the dissolving in suitable solvent or by means of wet-chemical or dry chemical etch, can remove negative structurized first coating 3.Decoating also can advantageously be utilized in burning or the oxidation in the oxygen plasma.
Just structurized layer 7 comprises a kind of structure 9 or several kinds of structures 9.According to the present invention, said structure 9 can comprise material different, the different composition of direction that is parallel to substrate surface along direction and/or edge perpendicular to substrate surface; Different optical properties, different sizes, promptly; Different diameters, width or height, or thickness; Or the different geometric size, that is, and different shapes.
Can be applicable to make the optical element of various heterogeneitys and/or different size according to method of the present invention.
The structure 9 of said structure 9 or just structurized layer 7 have an appointment height or the thickness of 0.1 μ m to 1mm, and the order of magnitude is less than 500 μ m, 200 μ m, 100 μ m, 50 μ m, diameter or the width of 20 μ m and/or 10 μ m.
In another embodiment, can deposit two kinds of material different at least as the structure 9 of layer 7 with the just structurized layer 7 of formation.That is, every kind of structure 9 of just structurized layer 7 can comprise another kind of material according to the character of expection, especially its optical property.
Comprise the aberration that the combination of at least two kinds of glass of different optical character can correcting optical system.According to the present invention, in one deck, make up these at least two kinds of materials or in different interlayers, make up these at least two kinds of materials, can realize described combination.
Following description relates to Fig. 2 A and 2B, is used to explain the advantageous variant with reference to process steps shown in Fig. 1 D and the 1E.In this process modification, at first be to utilize structurized first coating 3 with preparation substrate 1, as illustrated with reference to Figure 1A and 1B the time.First coating 3 has negative structuring 5 once more, and it can utilize common lift-off technology to process, thereby stays the zone 6 of unlapped first surface 2.Likewise, layer 7 deposits to according to the method on the substrate surface of preparation, and for example, the deposition by means of the gas deposition or the metal level of gas deposition glass can realize this deposition.Yet in this case, the layer thickness of layer 7 is not chosen enough greatly and is made its embracing layer 7 fully.This is to realize that through the layer thickness of choosing layer 7 this thickness is less than the layer thickness of first coating 3.Fig. 2 A representes this state in this process.
Then, by means of with reference to the complanation shown in Fig. 1 C, without any need for the removal operation, can directly remove first coating 3 because layer 7 is not completed into continuous cladding system, thereby keep in touch first coating 3.When removing first coating 3, can remove those zones that are positioned at first coating, 3 upper stratas 7, thereby remove those zones.Keep the result shown in Fig. 2 B once more, it is the structurized coating 7 that positive structure 9 is arranged.
According to the present invention, at least one side of substrate 1, can accomplish the making of just structurized layer 7, especially at the top 2 of substrate 1 and/or the bottom 4 of substrate 1.
Especially for making exquisite optical element or photoactive element, for example, the Fresnel lens can also advantageously be carried out repeatedly above-mentioned process steps, therefore, can make multilayer structured.
Forming said each multilayer structured layer comprises and above-mentioned layer 7 identical character.Especially, every layer can include different materials of different nature, especially different optical properties.
Fig. 3 A representes that a special preferred embodiment is similar to the interstage of process shown in Figure 1B.This figure explanation is used to be manufactured with the negative structuring 5 of the non-overlay area 6 and the Fresnel lens in zone 51, the wherein coated photoresist of substrate.
The negative structuring 5 that is used to make the Fresnel lens comprises the uncovered area of central circular, and this zone is surrounded (see figure 4) by the uncovered area of annular concentric region shape.The uncovered area of said annular region shape is that less radius is that r1 and bigger radius are r2 by the area limiting of the concentric circles restriction of two different radiis, and the width of formation is w=r2-r1.Radius along with increasing increases r1 and r2 respectively, reducing apart from d between the width w of annular region and two the adjacent annular zones.
Can be applied to be manufactured with the Fresnel lens or the Fresnel type lens of various different sizes according to process of the present invention.The height of said negative structuring 5 is about 0.1 μ m to 10mm.The diameter order of magnitude of the uncovered area of said central circular is less than 500 μ m, 200 μ m, 100 μ m, 50 μ m, 20 μ m or 10 μ m.Have such numerical value apart from d between the width w of said annular region and the annular region, approximately less than 500 μ m, 200 μ m, 100 μ m, 50 μ m, 20 μ m and/or 10 μ m.
Fig. 3 B and 3C representation class are similar to the process steps of Fig. 2 A and 2B description, are used to form optical element embodiment or photoactive element, and wherein photoactive layer 71 is applied to whole surface.By means of removing process, resist layer zone 51 and position photoactive layer 71 zones are on it one after the other removed, and what stay is to form just structurized photoactive region 71.
The size of just structurized width or photoactive layer 71 is corresponding to the width of uncovered area.The height of photoactive layer 71 is to receive the height of negative structuring 5 or the restriction of width, and its numerical value is about 0.1 μ m to 1mm.
Fig. 4 is illustrated in Fresnel lens arrangementization shown in lip-deep Fig. 3 C.
Especially,, also can advantageously repeatedly carry out above-mentioned process steps, therefore, can make multilayer structured in order to make the Fresnel lens.This draws in Fig. 5, and Fig. 5 representes the sectional view through multilayer Fresnel lens.In this typical embodiment, we apply the layer of three different designs, that is, and and ground floor 71, the second layer 72 and the 3rd layer 73.As shown in Figure 5, through progressively reducing the width of ground floor 71 structures to top level structure, top level structure is the 3rd layer of 73 structure, can produce the sawtooth pattern form, that is, and and sawtooth pattern structure and/or convex structure.Especially,, can process good sawtooth pattern form through reducing every layer the thickness and the number of increase layer, that is, and good sawtooth pattern structure and/or good convex structure.
In order to make structurized coating, at first, apply first coating 3 to the surface 2 of substrate 1, surface 2 also is to need to apply, shown in Figure 1A.Preferably, first coating 3 is to be processed by photosensitive resist layer.
The positive structure that the first structurized coating 3 produces ground floor 71 to the end comprises photosensitive resist layer, and it preferably forms by means of spin coated.The positive structure that the second structurized coating produces the second layer 72 to the end also comprises photosensitive resist layer, and it preferably forms by means of injection.Another coating preferably forms by means of injection to another just structurized layer of generation.Especially, said ground floor 71, the said second layer 72, and/or said the 3rd layer 73 comprise photoactive layer.
Other optical elements of Fig. 6 to 11 expression embodiment, they are respectively the photoactive element embodiment of Fresnel lens or Fresnel type lens.In the Fresnel lens of Fig. 5, it is repeatedly multilayer structured to make that above-mentioned process steps is particularly conducive to execution.In Fig. 6 to 11, describe multilayer structured in each layer comprise photoactive layer.
Illustrated exemplary embodiments representes to comprise ground floor 71 among Fig. 6 to 8, a three-tier system of the second layer 72 and the 3rd layer 73, these three layers top 2 that is formed on substrate 1.
Fig. 6 explains a three- tier system 71,72,73, every layer positive structure 91,92,93,94 wherein, and 95,96 have different height.Say that at length in ground floor 71, the height of positive structure 94 is lower than the height of positive structure 91; In the second layer 72, the height of positive structure 95 is lower than the height of positive structure 92; With in the 3rd layer 73, the height of positive structure 96 is lower than the height of positive structure 93.Especially, just structurized height is an alternate with respect to the height of adjacent positive structure in every layer.
Fig. 7 representes a kind of like this system, its middle level 71,72, and 73 comprise material different.Say that at length ground floor 71 comprises first kind of material, the second layer 72 comprises second kind of material, and the 3rd layer 73 comprises the third material.
Fig. 8 explains the example of a three- tier system 71,72,73, its middle level 71,72,73 and positive structure 91,92,93,98, and 99,100 comprise material different, especially, and positive structure 91,92,93,98,99,100 material replaces.Say that at length positive structure 91,92,93 is at every layer 71,72, comprise first kind of identical material in 73, and positive structure 98,99,100 is at every layer 71,72, comprise second kind of identical material in 73.
Fig. 9 explains Fresnel lens shown in Figure 8 or the structuring from the teeth outwards of Fresnel type lens.
In addition, the embodiment shown in Figure 10 and 11 representes a typical multilayer system, and three-tier system especially comprises: top ground floor 271, and the 3rd layer 273 at the top second layer 272 and top, they are formed on the top 2 of substrate 1; With bottom ground floor 471, the 3rd layer 473 of the bottom second layer 472 and bottom, they are formed on the bottom 4 of substrate 1.
Figure 10 explains such system, and wherein the layer system on the top 2 of substrate 1 is to form according to the layer system that Fig. 8 describes, and comprises first kind of material and second kind of material.Especially, positive structure 291,292,293,298,299,300 material replaces.Say that at length positive structure 291,292,293 is at every layer 271,272, comprise first kind of identical material in 273, and positive structure 298,299,300 is at every layer 271,272, comprise second kind of identical material in 273.Three-tier system on the bottom 4 of substrate 1 comprises the positive structure 491,492,493,498,499,500 of different materials, especially, positive structure 491,492,493,498,499,500 material replaces.Say that at length positive structure 491,492,493 is at every layer 471,472, comprise the third identical material in 473, and positive structure 498,499,500 is at every layer 471,472, comprise the 4th kind of identical material in 473.
A Figure 11 explanation three-tier system 271,272,273 on the top of substrate 1, every layer positive structure 291,292,293,301 wherein, 302,303 have different height and material.
Positive structure 291,292,293 comprises first kind of material, and positive structure 301,302,303 comprises second kind of material.In more detail, in ground floor 271, the height of positive structure 291 is greater than positive structure 301; In the second layer 272, the height of positive structure 292 is greater than positive structure 302; With in the 3rd layer 273, the height of positive structure 293 is greater than positive structure 303.Especially, the height of positive structure replaces for adjacent positive structure in every layer.Layer system on the bottom of substrate 4 is that the layer system on the bottom of describing in according to Figure 10 4 forms.
Figure 12 to 15 expression is according to the planimetric map of other preferred embodiment Fresnel lens of the inventive method making, and it can utilize said method to realize high degree of accuracy.
On substrate, can form a photoactive element at least, for example, Fresnel lens or Fresnel type lens.This is explanation in Figure 12 and 13, and wherein several Fresnel lens are formed on the substrate simultaneously, or are produced on the said substrate, for example, are produced on the wafer.
So the present invention describes a kind of method that is used to make diffraction optical element.
Method of the present invention is described in semiconductor, and glass forms the structurized application of glass and metal level on pottery and the plastic substrate.
By means of the resist layer photoetching method, can realize the structuring of each layer.
Preferably, utilize the heat or the electron beam evaporation of suitable glasses system, can realize the glassy layer that insulate.
An advantage of said method is the glassy layer that applies insulation in room temperature to the highest 150 ° of C, in above temperature range, unlikely substrate or the metal construction that applied is in the past caused any damage.
The suitable gas deposition parameter of choosing glass preferably is used to optics and the thermo-mechanical property set, in this manner, can apply thickness and be about 0.1 μ m and be the structurized glassy layer between the 1mm to the maximum.
For many years, be well-known by means of the vapor deposition process of electron beam, but it is mainly used in the machinery and the optical surface of plastic/glass glasses and handle.
The glass that Schott Glas is provided for this purposes has 30 years approximately.
According to the tables of data of known gas deposition glass 8329 (degassing Duran), we know that high gas deposition speed is 4 μ m/min to the maximum, and are confirmed by the technology consultation of sputter equipment user/manufacturer.
This speed is higher than quite a few times of known sputter rates, and this method capable of using realizes above-mentioned purpose.
Used the sputtering layer processed by the unit piece system (SiO preferably in the past
2), its sputter rate is the several nanometers of per minute.
Except high rate of sedimentation, another advantage of gas deposition is that substrate bears lower thermal stress, and it can utilize photoresist to form first coating.
For on substrate, forming structurized glassy layer, following parameter is preferred:
The surfaceness of substrate: < 50 μ m
100 ° of C of BIAS temperature during evaporating: ≈
Pressure during evaporating: 10
-5Mbar
The CTE of gas deposition glass and substrate is consistent.
Glass should have corresponding optical signature data.
For substrate such as silicon wafer or glass; For example;
according to existing knowledge, utilize known SCHOTT gas deposition glass (8329, G018-189) (consult tables of data); Can satisfy all these requirements; Wherein above-mentioned substrate is adopted suitable method, for example, electron beam evaporation.
Utilize other suitable gas deposition glass, can be applied to this method other substrate and organic and inorganic semiconductor.
The professional obviously knows, under the condition that does not depart from content of the present invention disclosed herein, can do various changes and variation to above-mentioned method and apparatus.
Claims (38)
1. one kind is used to apply the photolytic activity structuring to on-chip method, comprises the structuring that utilizes mask, it is characterized in that repeatedly repeating following steps:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of PVD, utilize photoactive layer to apply preparatory structurized substrate, this photoactive layer comprise at least a material that is selected from the group that constitutes by glass and metal and
Remove resist layer.
2. according to the process of claim 1 wherein that the step of coated substrates realizes by means of spin coated, injection, electro-deposition and/or by means of depositing a photosensitive film against corrosion at least.
3. according to the method for claim 1 or 2, wherein the photolytic activity structuring is applied to the bottom of said substrate and/or the top of said substrate.
4. according to the method for claim 1 or 2, the step of wherein removing resist layer realizes according to this sample loading mode, promptly also removes at least one layer that has been applied on the resist layer.
5. according to the method for claim 1 or 2, wherein applying step comprises the hydatogenesis through heat or electron beam evaporation, utilizes photoactive layer to apply preparatory structurized substrate.
6. according to the method for claim 1 or 2, wherein applying step comprises: by means of electron beam PIAD process, utilize photoactive layer to apply preparatory structurized substrate.
7. according to the method for claim 1 or 2, wherein the photolithographic structures step comprises: mask exposure and development subsequently.
8. according to the method for claim 1 or 2, wherein photoactive layer applies according to this sample loading mode, and promptly this photoactive layer comprises the composition of layer of the direction variation that is parallel to substrate surface along direction and/or edge perpendicular to substrate surface.
9. according to the method for claim 1 or 2, wherein utilize photoactive layer to apply preparatory structurized substrate and in every layer, comprise identical materials or material different.
10. according to the method for claim 1 or 2, wherein photoactive layer applies according to this sample loading mode, and promptly this photoactive layer comprises the composition of layer of the direction variation that is parallel to substrate surface along direction and/or edge perpendicular to substrate surface.
11. according to the method for claim 1 or 2, wherein utilize coating material to make photoactive layer through the PVD process, this material is to be processed by glass.
12., wherein, apply photoactive layer by means of the electron beam evaporation in the PVD process according to the method for claim 1 or 2.
13., wherein, apply photoactive layer by means of the electron beam evaporation in the PIAD process according to the method for claim 1 or 2.
14. photoactive element; Comprise substrate and at said on-chip at least one photolytic activity ground floor; Wherein this ground floor is to process and the photolytic activity structure arranged by being selected from least a material in glass or the metal; Wherein utilize the structurized process of mask to make the photolytic activity structure, it is characterized in that repeatedly repeating following steps through comprising:
Utilize photosensitive resist layer coated substrates,
The layer that photolithographic structuresization applies,
By means of PVD, utilize photoactive layer to apply preparatory structurized substrate, this photoactive layer comprise at least a material that is selected from the group that constitutes by glass and metal and
Remove resist layer.
15. according to the photoactive element of claim 14, wherein the photolytic activity ground floor is applied to the bottom of said substrate and/or the top of said substrate.
16. according to the photoactive element of claim 14 or 15, wherein the thickness of photolytic activity ground floor is at 0.1 μ m be to the maximum between the 1mm.
17. according to the photoactive element of claim 14 or 15, wherein the width of each structure of photolytic activity ground floor is less than 50 μ m.
18. according to the photoactive element of claim 14 or 15, wherein the photolytic activity ground floor comprises the material composition of the direction variation that is parallel to substrate surface along direction and/or edge perpendicular to substrate surface.
19. according to the photoactive element of claim 14 or 15, wherein coated substrates realizes by means of spin coated, injection, electro-deposition and/or by means of depositing a photosensitive film against corrosion at least.
20. according to the photoactive element of claim 14 or 15, wherein remove resist layer in such a manner, promptly also remove at least one layer that has been applied on the resist layer.
21. like the photoactive element of claim 14 or 15, wherein utilizing photoactive layer to apply preparatory structurized substrate is that hydatogenesis through heat or electron beam evaporation realizes.
22.,, utilize photoactive layer to apply preparatory structurized substrate wherein by means of electron beam PIAD process according to the photoactive element of claim 14 to 15.
23. according to the photoactive element of claim 14 to 15, wherein photolithographic structuresization comprises: mask exposure and development subsequently.
24. according to the photoactive element of claim 14 or 15, wherein photoactive element has the array of several photoactive layers.
25. according to the photoactive element of claim 24, wherein the array of several photoactive layers comprises identical materials or material different in each photoactive layer.
26. according to the photoactive element of claim 14 or 15, wherein utilize the PVD process to apply the material of processing by glass, make photoactive layer.
27., wherein, apply photoactive layer by means of the electron beam evaporation in the PVD process according to the photoactive element of claim 14 or 15.
28., wherein, apply photoactive layer by means of the electron beam evaporation in the PIAD process according to the photoactive element of claim 14 or 15.
29. like the photoactive element of claim 14 or 15, wherein the photolytic activity structure is a focusing structure.
30. the photoactive element according to claim 14 or 15 is the Fresnel lens.
31. an assembly has the photolytic activity structure of being processed by glass, wherein this structure is to utilize the method for characteristic in the requirement 1 of having the right to process.
32. an assembly has the photolytic activity structure that is made of metal, wherein this structure is to utilize the method for characteristic in the requirement 1 of having the right to process.
33. an assembly has by glass and metal photolytic activity structure, wherein this structure is to utilize the method for characteristic in the requirement 1 of having the right to process.
34. an assembly has by glass and/or metal photolytic activity structure, wherein this structure is to utilize the method for characteristic in the requirement 1 of having the right to process.
35. like each assembly in the claim 31 to 34, wherein the photolytic activity structure is a focusing structure.
36. according to any one assembly in the claim 31 to 34 is the Fresnel lens.
37. a hybrid lens has substrate and photolytic activity structure, this structure is to utilize to process according to the method for claim 1.
38. like the hybrid lens of claim 37, wherein the photolytic activity structure is a focusing structure.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US57837704P | 2004-06-09 | 2004-06-09 | |
| US60/578,377 | 2004-06-09 | ||
| DE102004059252.7 | 2004-12-08 | ||
| DE200410059252 DE102004059252A1 (en) | 2004-06-09 | 2004-12-08 | Optically active structure application method for Fresnel lens manufacture, involves photographic structuring photosensitive resist layer, coating substrate with optically active layer and lifting-off resist layer |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800188414A Division CN1997917A (en) | 2004-06-09 | 2005-06-08 | Building up diffractive optics by structured glass coating |
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|---|---|
| CN102707351A true CN102707351A (en) | 2012-10-03 |
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| CN2012101713100A Pending CN102707351A (en) | 2004-06-09 | 2005-06-08 | The producing of diffraction optical element with structured glass coating |
| CNA2005800188414A Pending CN1997917A (en) | 2004-06-09 | 2005-06-08 | Building up diffractive optics by structured glass coating |
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| CNA2005800188414A Pending CN1997917A (en) | 2004-06-09 | 2005-06-08 | Building up diffractive optics by structured glass coating |
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| CN (2) | CN102707351A (en) |
| DE (2) | DE102004059252A1 (en) |
| TW (1) | TW200604576A (en) |
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| TWI837062B (en) * | 2023-09-08 | 2024-03-21 | 薩摩亞商大煜國際有限公司 | How to form a two-color coating |
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| DE102005045197B4 (en) * | 2005-09-21 | 2010-12-09 | Schott Ag | Process for producing a hybrid optical lens |
| KR20160140598A (en) * | 2014-01-24 | 2016-12-07 | 3디 글래스 솔루션즈 인코포레이티드 | Methods of fabricating photoactive substrates for micro-lenses and arrays |
| EP3140838B1 (en) | 2014-05-05 | 2021-08-25 | 3D Glass Solutions, Inc. | Inductive device in a photo-definable glass structure |
| CN104330840B (en) * | 2014-07-07 | 2016-05-04 | 中国空空导弹研究院 | A kind of many steps lenticule preparation method and optical element step preparation method |
| US10070533B2 (en) | 2015-09-30 | 2018-09-04 | 3D Glass Solutions, Inc. | Photo-definable glass with integrated electronics and ground plane |
| AU2017223993B2 (en) | 2016-02-25 | 2019-07-04 | 3D Glass Solutions, Inc. | 3D capacitor and capacitor array fabricating photoactive substrates |
| US11161773B2 (en) | 2016-04-08 | 2021-11-02 | 3D Glass Solutions, Inc. | Methods of fabricating photosensitive substrates suitable for optical coupler |
| EP3282294B1 (en) * | 2016-08-12 | 2020-04-15 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | High resolution full material fresnel zone plate array and process for its fabrication |
| US10996482B2 (en) | 2016-09-07 | 2021-05-04 | Osram Oled Gmbh | Optically effective element, method of producing an optically effective element, and optoelectronic component |
| DE102016116749A1 (en) | 2016-09-07 | 2018-03-08 | Osram Opto Semiconductors Gmbh | DIFFACTIVE OPTICAL ELEMENT AND METHOD FOR PRODUCING A DIFFERENT OPTICAL ELEMENT |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW200604576A (en) | 2006-02-01 |
| CN1997917A (en) | 2007-07-11 |
| DE102004059252A1 (en) | 2006-01-19 |
| DE202004019052U1 (en) | 2005-10-27 |
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