CN1997254A - Base plate plasma static-removing technology - Google Patents
Base plate plasma static-removing technology Download PDFInfo
- Publication number
- CN1997254A CN1997254A CNA2005101122721A CN200510112272A CN1997254A CN 1997254 A CN1997254 A CN 1997254A CN A2005101122721 A CNA2005101122721 A CN A2005101122721A CN 200510112272 A CN200510112272 A CN 200510112272A CN 1997254 A CN1997254 A CN 1997254A
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- CN
- China
- Prior art keywords
- electrostatic breakdown
- substrate
- supporting pin
- base plate
- height
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
This invention discloses one baseboard plasma ion static electricity removing process, wherein, the supportive bolt is hanged from top of base board for removing electricity to the height to 40mm. This invention improves the supportive bolt lift height to solve the static damage problems.
Description
Technical field
The invention belongs to process for manufacturing liquid crystal display, relate in particular to a kind of base plate plasma static-removing technology.
Background technology
In process for manufacturing liquid crystal display, because substrate can produce friction inevitably in manufacture process, and/or carries out etching and cleaning in having the solution of electric charge, acquire a certain degree, just have a large amount of electrostatic charges on the substrate.And these substrates are owing to have a large amount of electrostatic charges, thus influence back one step process, so the electric charge on the substrate must be removed.
Dried quarter of the prior art, equipment used the static on the plasma static-removing technology treatment substrate usually.Plasma static-removing technology is: at O
2Throughput 800 standard milliliters divide down, under 500 watts of RF (radio frequency) power, under pressure 6.67 handkerchiefs, the supporting pin height is under the 20mm, [this substrate is earlier through three stratification vapour depositions (CVD) to three layers of CVD/Cr/PR/D-WE substrate with the ceramic electrode of positively charged, advanced Cr again and handled, and then carried out photoresistance (PR) and handle, after the substrate that etching (D-WE) is handled] handled for 5 seconds.Since supporting pin be from around remove substrate jack-up is unsettled, substrate center is because no supporting pin can not complete unsettled disengaging lower electrode surface (selling lifting height 20mm all around), thereby there is the electrostatic breakdown phenomenon to take place, influences a back operation, finally influence product percent of pass.
Summary of the invention
The present invention is directed to and destatic insufficient in the prior art and cause the electrostatic breakdown problem, a kind of base plate plasma static-removing technology is provided, in this technology, supporting pin with the unsettled electricity that removes of substrate jack-up, is characterized in that the height of this supporting pin is adjusted to 40mm from all around.
The present invention comes effectively fully institute's static electrification in the substrate to be removed by the height that changes supporting pin, destatics insufficient and causes the electrostatic breakdown problem with solution.
Positive progressive effect of the present invention is: remove supporting pin height in electrician's preface by improving plasma, cause electrostatic breakdown to avoid substrate not carry out fully removing electricity, improve the qualification rate of product.
Embodiment
Embodiment 1
At O
2Throughput is that 800 standard milliliters divide down, under 500 watts of the RF power, under pressure 6.67 handkerchiefs, the supporting pin height is respectively under 20mm and the 40mm, with three layers of 5 second of CVD/Cr/PR/D-WE processing substrate, each substrate electrostatic breakdown incidence is as shown in table 1 with the ceramic electrode of positively charged.
The substrate piece number and the electrostatic breakdown incidence of electrostatic breakdown takes place in table 1
| The supporting pin height | Treatment substrate piece number | The substrate piece number of electrostatic breakdown takes place | The electrostatic breakdown incidence |
| 20mm | 200 | 12 | 0.37％ |
| 40mm | 200 | 2 | 0.06％ |
The result shows: under the supporting pin height 20mm condition, the electrostatic breakdown phenomenon is more serious; Under supporting pin height 40mm condition, can significantly improve the electrostatic breakdown phenomenon, can improve product percent of pass.
Embodiment 2
At O
2Throughput is that 800 standard milliliters divide down, under 500 watts of the RF power, under pressure 6.67 handkerchiefs, the supporting pin height is respectively under 20mm and the 40mm, ceramic electrode with positively charged respectively handled for 5 seconds with some pieces of three layers of CVD/Cr/PR/D-WE substrate, and each substrate electrostatic breakdown incidence is shown in table 2 and table 3.
Table 2 is substrate piece number and the electrostatic breakdown incidence that electrostatic breakdown takes place under the 20mm at the supporting pin height
| Treatment substrate piece number | 240 | 320 | 140 | 320 | 340 | 180 | 240 |
| Electrostatic breakdown substrate piece number takes place | 19 | 86 | 12 | 25 | 60 | 66 | 7 |
| Electrostatic breakdown incidence (%) | 0.49 | 1.68 | 0.54 | 0.49 | 1.10 | 2.29 | 0.18 |
| The electrostatic breakdown average originating rate | 0.97％ | ||||||
Table 3 is substrate piece number and the electrostatic breakdown incidence that electrostatic breakdown takes place under the 40mm at the supporting pin height
| Treatment substrate piece number | 180 | 340 | 160 | 380 | 360 | 320 | 460 |
| Electrostatic breakdown substrate piece number takes place | 0 | 0 | 0 | 1 | 0 | 2 | 5 |
| Electrostatic breakdown incidence (%) | 0.00 | 0.00 | 0.00 | 0.02 | 0.00 | 0.04 | 0.07 |
| The electrostatic breakdown average originating rate | 0.02％ | ||||||
The result shows: under the supporting pin height 20mm condition, the electrostatic breakdown phenomenon is more serious; Under supporting pin height 40mm condition, can significantly improve the electrostatic breakdown phenomenon, can improve product percent of pass.
Conclusion: use above-mentioned test data and actual average electrostatic breakdown incidence, can draw, effectively suppressed generation by the insufficient electrostatic breakdown problem that causes of plasma static-removing by improving the height of supporting pin.
Claims (1)
1, a kind of base plate plasma static-removing technology, in this technology, supporting pin with the unsettled electricity that removes of substrate jack-up, is characterized in that the height of this supporting pin is adjusted to 40mm from all around.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005101122721A CN1997254A (en) | 2005-12-28 | 2005-12-28 | Base plate plasma static-removing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005101122721A CN1997254A (en) | 2005-12-28 | 2005-12-28 | Base plate plasma static-removing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1997254A true CN1997254A (en) | 2007-07-11 |
Family
ID=38252142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005101122721A Pending CN1997254A (en) | 2005-12-28 | 2005-12-28 | Base plate plasma static-removing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1997254A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102211068A (en) * | 2010-04-06 | 2011-10-12 | 大日本网屏制造株式会社 | Coating device |
| CN101556439B (en) * | 2008-04-10 | 2012-07-18 | 北京京东方光电科技有限公司 | Method for removing polyimide (PI) film from simulation substrate |
-
2005
- 2005-12-28 CN CNA2005101122721A patent/CN1997254A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101556439B (en) * | 2008-04-10 | 2012-07-18 | 北京京东方光电科技有限公司 | Method for removing polyimide (PI) film from simulation substrate |
| CN102211068A (en) * | 2010-04-06 | 2011-10-12 | 大日本网屏制造株式会社 | Coating device |
| CN102211068B (en) * | 2010-04-06 | 2013-08-07 | 大日本网屏制造株式会社 | Coating device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20070711 |