CN1996486A - Digital sensing and detection circuit - Google Patents
Digital sensing and detection circuit Download PDFInfo
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Abstract
A digital sensing circuit used for sensing the potential information stored in the storage unit, with the digital sensing circuit only comprising simple current to voltage converter, reset block circuit and sensing block circuit. Current to voltage converter transforms the conductive current to voltage signal, and the sensing block circuit bumping output potential information based on above voltage signal. With simple allocation and design, it can improve manufacturing pass rate, to get large volume of practical storage component.
Description
Technical field
The present invention relates to the sensing circuit in a kind of storer, and be particularly related to the digital sensing and detection circuit in a kind of multistable memory element.
Background technology
In recent years, a kind of bistable state (bistable) material is applied to making memory element and switch switch etc., this kind bistable material comprises inorganic material and organic material (organicmaterial), and this kind bistable material is along with the difference of the voltage that is applied thereto, and changes between high impedance status and low impedance state.It should be noted that and this organic material is arranged between two electrodes and the multistable memory element that produces has the potentiality of the non-volatile memory device that becomes a new generation.
With respect to silica-based plinth element (silicon-based device), the advantage that has preferable ductility and flexible etc. with the organic element of organic material manufacturing, and because organic material almost can be coated on any surface, therefore, make that forming organic memory array in the substrate of rubber-like plastic cement becomes possibility, in addition, organic material can just be made after silicon technology is finished and handle, and has further simplified whole technology.So because above-mentioned advantage and characteristic, must there be in the future more and more many typographies (printing manufacturing process) to be developed in a large amount of productions that are applied to organic element, and make the cost of organic element significantly reduce, and use more extensive.
Fig. 1 is the idealized characteristic curve map of organic memory cell in a kind of organic memory, and this organic memory cell uses organic material to make, and please refer to Fig. 1.This organic memory cell has bistable characteristic at least, that is, can be in high impedance status or low impedance state at least.When organic storage unit was in high impedance status, the relation between its bias voltage and the conduction current was in high impedance status so work as organic storage unit shown in path 110, apply bias voltage V then
RIn this organic memory cell, the conduction current of this organic memory cell of then flowing through is I
0When the bias voltage that applies surpasses V
T1After, then this organic memory cell transfers to and is in low impedance state from being in high impedance status, and then, the relation between its bias voltage and the conduction current is shown in path 120, so be in low impedance state when organic storage unit, and the bias voltage that is applied is V
R, the conduction current of the organic memory cell of then flowing through is I
1, I wherein
1＞＞I
0Then, forced down V when the bias plasma that applies
T0After, then this organic memory cell transfers to and is in high impedance status from being in low impedance state again.Please note, the family curve of Fig. 1 has been idealized significantly, along with the difference of the employed organic material of organic memory cell, and its family curve or some difference, but the characteristic that organic memory utilized does not basically exceed the category of the idealized characteristic curve of above-mentioned key drawing 1.
From the above, the organic memory that use has the organic material manufacturing of bistable characteristic at least will have the crooked ability that contains, and can be used in the flexible flexible system with soft electronic component, the more important thing is that cost is not high, so will become one of a kind of most important electronic storage element in the hyundai electronics application.Therefore, develop a kind of practical and complete organic memory very urgent, and wherein, develop that a kind of design simple and qualification rate is high and the important especially key of the digital sensing and detection circuit of easy production with layout.
Summary of the invention
Purpose of the present invention just provides a kind of digital sensing and detection circuit, it is used for the stored position information of bit location in the sensing organic memory, this digital sensing and detection circuit is very simple, so the difficulty of layout and design is extremely low, can improve the manufacturing qualification rate, and be highly suitable for LTPS technology, and then obtain a kind of can production in a large number and the memory component of practical.
Another object of the present invention just provides a kind of digital sensing and detection circuit, it can be used for the stored position information of bit location in sensing phase transition storage and the magnetic storage one, this digital sensing and detection circuit simplicity of design and qualification rate height can and then obtain a kind of can production in a large number and the memory component of practical.
From a kind of viewpoint, the present invention proposes a kind of digital sensing and detection circuit, and in order to the stored position information of the bit location in the sensing organic memory, this digital sensing and detection circuit comprises that at least electric current is to electric pressure converter and sensing block circuit.Wherein electric current to electric pressure converter has current terminal, and this electric current to the voltage signal of converting to the conduction current of electric pressure converter according to this current terminal of flowing through.And sensing block circuit is connected to above-mentioned electric current to electric pressure converter, and this sensing block circuit receives and according to above-mentioned voltage signal, cushions the stored position information of bit location in the output organic memory.
Described according to embodiments of the invention, above-mentioned digital sensing and detection circuit also can include and be connected to the replacement block circuit of above-mentioned electric current to electric pressure converter, and this replacement block circuit is according to the first switching signal above-mentioned voltage signal of resetting.
Described according to embodiments of the invention, the electric current in the above-mentioned digital sensing and detection circuit to electric pressure converter comprises the first transistor and electric capacity, and wherein, electric capacity has first end and second end.First source/drain electrode of the first transistor is connected to the current terminal of electric current to electric pressure converter, the grid of the first transistor is connected to the second switch signal, first end of electric capacity is connected to second source/drain electrode of the first transistor, second end of electric capacity is connected to first current potential, and voltage signal is by first end acquisition of electric capacity.In addition, above-mentioned replacement block circuit comprises transistor seconds.First source/drain electrode of this transistor seconds is connected to first end of electric capacity, and second source/drain electrode of transistor seconds is connected to second current potential, and the grid of transistor seconds is connected to first switching signal.Wherein, not conducting of transistor seconds when the first transistor conducting, and transistor seconds conducting during not conducting of the first transistor.For example, if the first transistor is different with the type of transistor seconds, then first switching signal is identical with the second switch signal; If the first transistor is identical with the type of transistor seconds, then the second switch signal is the anti-phase of first switching signal.More specifically come for example, this first switching signal and second switch signal can be clock pulse signal, and then above-mentioned digital sensing and detection circuit utilizes the responsibility cycle of this time clock signal, adjust the first transistor and transistor seconds other ON time.Among the embodiment, above-mentioned first current potential and second current potential all for example are earth potential.
Described according to embodiments of the invention, the sensing block circuit in the above-mentioned digital sensing and detection circuit comprises the 3rd transistor and the 4th transistor at least.The 3rd transistorized first source/drain electrode is connected to the 3rd current potential, the 3rd transistorized grid is connected to the 3rd switching signal, and the 4th transistorized first source/drain electrode is connected to the 3rd transistorized second source/drain electrode, the 4th transistorized second source/drain electrode is connected to first current potential, and the 4th transistorized grid is connected to above-mentioned voltage signal.Wherein, when the 3rd not conducting of transistor, the stored position information of bit location in the 4th transistorized first source/drain electrode output organic memory.Among the embodiment, the sensing block circuit in the above-mentioned digital sensing and detection circuit also comprises the 5th transistor and the 6th transistor.The 5th transistorized first source/drain electrode is connected to the 3rd current potential, the 5th transistorized grid is connected to the 4th transistorized first source/drain electrode, the 6th transistorized first source/drain electrode is connected to the 5th transistorized second source/drain electrode, the 6th transistorized second source/drain electrode is connected to first current potential, and the 6th transistorized grid is connected to the 5th transistorized grid.Wherein, the 5th transistor AND gate the 6th transistorized type difference, and the stored position information of the bit location in the organic memory is exported by the 6th transistorized first source/drain electrode.For example, the 5th transistor is the P transistor npn npn, and then the 6th transistor is the N transistor npn npn.And among the embodiment, first current potential for example is an earth potential, and the 3rd current potential for example is a power supply potential.
Described according to embodiments of the invention, above-mentioned digital sensing and detection circuit also is connected to sampling and holding circuit, and this sampling and holding circuit integer are exported the stored position information of bit location in the above-mentioned organic memory.
The attention of value be that the organic memory of using digital sensing and detection circuit of the present invention can be used as nonvolatile memory and uses.
From another kind of viewpoint, a kind of digital sensing and detection circuit proposed by the invention is not limited to only be used in organic memory, other as phase transition storage (be called for short PCRAM) or magnetic storage (being called for short MRAM) all should utilize above-mentioned in identical digital sensing and detection circuit come the stored position information in detecting position unit.
In sum, digital sensing and detection circuit proposed by the invention only comprises that very simple electric current is to electric pressure converter, replacement block circuit and sensing block circuit.So the difficulty of layout and design is extremely low, can improves the manufacturing qualification rate, and be highly suitable for LTPS technology, so can and then obtain a kind of can production in a large number and the memory component of practical.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the idealized characteristic curve map of organic memory cell in a kind of organic memory.
Fig. 2 is the circuit block diagram of a kind of organic memory of application digital sensing and detection circuit of the present invention.
Fig. 3 is the circuit block diagram of a kind of digital sensing and detection circuit of one embodiment of the invention.
Fig. 4 A is the circuit block diagram of a kind of digital sensing and detection circuit of another embodiment of the present invention.
Fig. 4 B is the circuit diagram of a kind of embodiment of the digital sensing and detection circuit of Fig. 4 A.
Fig. 5 is each signal timing diagram of the digital sensing and detection circuit of Fig. 4 B.
The main element description of symbols
210: bit cell array
220_1,220_2,220_j, 220_m, 400: digital sensing and detection circuit
310: organic memory cell
322,412,416,422,424,426,428: transistor
330,410: electric current is to electric pressure converter
332,418: electric current is to the current terminal of electric pressure converter
340,420: sensing block circuit
430: sampling and holding circuit
413: first end of electric capacity
414: electric capacity
415: second end of electric capacity
440: replacement block circuit
434,436: phase inverter
432: switch
BL_1, BL_2, BL_j, BL_m: data line
M (1,1), M (2,1), M (j, 1), M (1, i), M (2, i), M (j, i): bit location
M (n, m): bit location
WL_1, WL_i, WL_n: selection wire
Embodiment
Fig. 2 please refer to Fig. 2 for the circuit block diagram of a kind of organic memory of application digital sensing and detection circuit of the present invention.This organic memory comprises: i selection wire WL_1 ..., WL_i, j data line BL_1, BL_2 ..., BL_j, bit cell array 210 and j digital sensing and detection circuit 220_1,220_2 ..., 220_j.And comprise a plurality of bit location M (1,1), M (2,1) in the bit cell array 210, ..., M (j, 1) ..., M (1, i), M (2, i), ..., M (j, i), by among the figure as can be known, at least be connected with in these bit locations between each data line and each selection wire, and each digital sensing and detection circuit 220_1,220_2 ..., 220_j is connected to corresponding these data lines BL_1 respectively, BL_2 ..., BL_j.Wherein, in order clearly to express easily, so the definition capable B of bit location (n) is for being connected to all bit location M (1 of n selection wire, n), and M (2, n), ..., M (j, n), and definition bit location M (m, n) for being connected to the bit location of m data line and n selection wire, above-mentioned i, j, m, n are all the positive integer (natural number) greater than zero, and n＜=i, m＜=j.
Fig. 3 is the circuit block diagram of a kind of digital sensing and detection circuit of one embodiment of the invention, please refer to Fig. 3.Digital sensing and detection circuit 220_m proposed by the invention is used for bit location M in the sensing organic memory (this digital sensing and detection circuit 220_m comprises that at least electric current is to electric pressure converter 330 and sensing block circuit 340 for m, n) stored position information.Electric current to electric pressure converter 330 has current terminal 332, and electric current to electric pressure converter 330 is exactly the conduction current I according to this current terminal 332 of flowing through, and to the voltage signal V of converting.Sensing block circuit 340 is connected to above-mentioned electric current to electric pressure converter 330, these sensing block circuit 340 receptions and the voltage signal V that is exported to electric pressure converter 330 according to electric current, cushion the bit location M of output in the organic memory (m, n) stored position information.
Bit location M (m, n) comprise organic memory cell 310 and transistor 322 at least, wherein, organic memory cell 310 for example is that organic material is arranged between two electrodes and the multistable memory element that produces, so organic memory cell can be used to bit of storage information, natch, an organic memory cell does not limit the information that can only store a position.Signal on selection wire WL_n activates, and when making transistor 322 conductings, organic memory cell 310 can be connected with data line BL_m.And because organic memory cell 310 is when being in low impedance state or being in high impedance status, the conduction current difference in size of organic memory cell 310 of flowing through is very big, so digital sensing and detection circuit 220_m can be according to the conduction current I of the current terminal 332 of flowing through, come bit location M (m, n) stored position information in the sensing organic memory.
Please be simultaneously with reference to Fig. 2 and Fig. 3, when n selection wire activates, transistor in the capable B of bit location (n) can be connected to the organic memory cell in the capable B of bit location (n) on separately the data line, and these digital sensing and detection circuits 220_1,220_2, ..., 220_j is via the data line BL_1 that connects separately, BL_2 ..., BL_j comes sensing and reads the interior stored position information of organic memory cell of the capable B of bit location (n).
Fig. 4 A is the circuit block diagram of a kind of digital sensing and detection circuit of another embodiment of the present invention, please refer to Fig. 4 A.The digital sensing and detection circuit 400 of this embodiment is except comprising that electric current is to electric pressure converter 410 and sensing block circuit 420, also comprised and be connected to the replacement block circuit 440 of electric current to electric pressure converter 410, electric current is identical with the described person of Fig. 3 to the function of electric pressure converter 410 and sensing block circuit 420, and newly-increased replacement block circuit 440 comes the voltage signal V of reset current to the electric pressure converter 410 according to the first switching signal (not shown).Among this embodiment, digital sensing and detection circuit 400 also is connected to sampling and holding circuit 430, export after this sampling and holding circuit 430 the output integer, that is sampling and holding circuit 430 integers are exported the stored position information of bit location in the above-mentioned organic memory sensing block circuit 420.
Fig. 4 B is the circuit diagram of a kind of embodiment of the digital sensing and detection circuit of Fig. 4 A, please refer to Fig. 4 B.Electric current in the digital sensing and detection circuit to electric pressure converter 410 comprises the first transistor 412 and electric capacity 414, and wherein, electric capacity 414 has first end 413 and second end 415.First source/drain electrode of the first transistor 412 is connected to the current terminal 418 of electric current to electric pressure converter 410, the grid of the first transistor 412 is connected to second switch signal SW2, first end 413 of electric capacity 414 is connected to second source/drain electrode of the first transistor 412, second end 415 of electric capacity 414 is connected to first current potential, they for example be earth potential, and voltage signal V is by first end, 413 acquisitions of electric capacity 414.In this embodiment, replacement block circuit 440 only comprises transistor seconds 416.First source/drain electrode of this transistor seconds 416 is connected to first end 413 of electric capacity 414, and second source/drain electrode of transistor seconds 416 is connected to second current potential, for example is earth potential, and the grid of transistor seconds 416 is connected to the first switching signal SW1.
Foregoing circuit wants the rule of normal operation to be: when the first transistor 412 conductings, the electric capacity 414 of electric current to the electric pressure converter 410 is according to the size of the conducting electric current I of the current terminal 418 of flowing through, change voltage signal V fast or slowly, so the time transistor seconds 416 must not conducting; And when transistor seconds 416 conductings in the replacement block circuit 440, first end 413 of electric capacity 414 is compelled to reset to second current potential, is earth potential in this example, so the time the first transistor 412 must not conducting.Therefore, if the first transistor 412 is different with the type of transistor seconds 416, then the first switching signal SW1 is identical with second switch signal SW2; Otherwise if the first transistor 412 is identical with the type of transistor seconds 416, then second switch signal SW2 is the anti-phase of the first switching signal SW1.In the present embodiment, because the first transistor 412 is different with the type of transistor seconds 416, so also specifically make this first switching signal SW1 and second switch signal SW2 be all clock pulse signal CK, then the digital sensing and detection circuit of present embodiment is adjusted the responsibility cycle of this time clock signal CK, just can adjust the first transistor 412 and 416 other ON time of transistor seconds.If use the organic memory of manufacturing of the present invention, produce opering characteristic of electric apparatus drift because of the factor when making, for example the size of conducting electric current changes, and just can adjust the responsibility cycle of clock pulse signal CK, keeps the output of digital sensing and detection circuit to have the same characteristic.
Please continue the B with reference to Fig. 4, the sensing block circuit 420 in the digital sensing and detection circuit comprises the 3rd transistor 422 and the 4th transistor 426 at least.First source/drain electrode of the 3rd transistor 422 is connected to the 3rd current potential, for example be power supply potential VDD, the grid of the 3rd transistor 422 is connected to the 3rd switching signal SW3, and first source/drain electrode of the 4th transistor 426 is connected to second source/drain electrode of the 3rd transistor 426, second source/drain electrode of the 4th transistor 426 is connected to first current potential, for example be earth potential, and the grid of the 4th transistor 426 is connected to the voltage signal V that electric current is exported to electric pressure converter 410.By among the figure as can be known, foregoing circuit wants the rule of normal operation to be: when the 422 not conductings of the 3rd transistor, the 4th transistor 426 is along with voltage signal V, the stored position information of bit location in its first source/drain electrode output organic memory, so the time the first transistor 412 necessary conductings; Opposite, when 422 conductings of the 3rd transistor, first source/drain electrode of the 4th transistor 426 is pulled to the 3rd current potential, is power supply potential VDD in this example, so the time can't be used for sensing position information.Therefore, in the present embodiment, because the 3rd transistor 422 is identical with the type of the first transistor 412, so the 3rd switching signal SW3 is necessary for the anti-phase of the first switching signal SW1, so that the 3rd transistor 422 not conductings when the first transistor 412 conductings.So in the present embodiment, also specifically making the 3rd switching signal SW3 is the inversion signal/CK of clock pulse signal.
In the present embodiment, the sensing block circuit 420 in the digital sensing and detection circuit also includes the push-pull circuit of being made up of the 5th transistor 424 and the 6th transistor 428.First source/drain electrode of the 5th transistor 424 is connected to the 3rd current potential, for example be power supply potential VDD, the grid of the 5th transistor 424 is connected to first source/drain electrode of the 4th transistor 426, first source/drain electrode of the 6th transistor 428 is connected to second source/drain electrode of the 5th transistor 424, second source/drain electrode of the 6th transistor 428 is connected to first current potential, for example be earth potential, the grid of the 6th transistor 428 is connected to the grid of the 5th transistor 424.Wherein, the 5th transistor 424 is different with the type of the 6th transistor 428, and the stored position information of the bit location in the organic memory is exported by the first source/drain electrode of the 6th transistor 428.In the present embodiment, the 5th transistor for example is the P transistor npn npn, and then the 6th transistor for example is the N transistor npn npn.
In the present embodiment, sampling and holding circuit 430 comprise: switch 432 and fastened the lock device by what phase inverter 434 and phase inverter 436 formed.This switch 432 is according to sampled signal S, in 412 conduction periods of the first transistor, the Dsc_Out signal is connected to by what phase inverter 434 and phase inverter 436 were formed fastens the lock device, with the stored position information of integer output organic memory cell.
Fig. 5 is each signal timing diagram of the digital sensing and detection circuit of Fig. 4 B, please be simultaneously with reference to Fig. 4 B and Fig. 5.By among the figure as can be known, the first transistor 412 for example is the P transistor npn npn, and transistor seconds 416 for example is the N transistor npn npn, so when time clock signal CK is in the semiperiod of noble potential, make the first transistor 412 not conductings and transistor seconds 416 conductings, this moment, electric capacity 414 was reset to earth potential, so that voltage signal V remains on is low () current potential.Then when time clock signal CK is in the semiperiod of electronegative potential, make the first transistor 412 conductings and transistor seconds 416 not conductings, the conduction current I that this moment, current terminal 418 flowed into is to electric capacity 414 chargings.Because the conduct electricity flow of charging is relevant with the state (the position information of being stored) of organic memory cell, the conduction current of conduction current when organic storage unit is in low impedance state when organic memory cell is in high impedance status, therefore when organic storage unit is in low impedance state, electric capacity 414 rapid charges, voltage signal V raises rapidly and surpasses the critical potential of turn-on transistor 426, make 426 conductings of the 4th transistor, and then make the Dsc_Out signal become noble potential.Relatively, when organic storage unit was in high impedance status, electric capacity 414 chargings were slow, and voltage signal can remain on electronegative potential hardly with changing, make the 4th transistor 426 keep not conducting, and the Dsc_Out signal is kept electronegative potential.Therefore, the position information that this moment, on behalf of organic memory cell, the Dsc_Out signal just can store.Sampling and holding circuit 430 be according to sampled signal S, with Dsc_Out signal integer Cheng Buhui along with the semiperiod changes, and the output signal Out of the stored position information of the simple expression of output organic memory cell.
Because organic material can't disappear along with bias voltage, and changes its residing state,, uses the organic memory of application digital sensing and detection circuit of the present invention so can be used as nonvolatile memory.
From another kind of viewpoint, a kind of digital sensing and detection circuit proposed by the invention is not limited to only be used in organic memory, and other all should utilize digital sensing and detection circuit identical in the foregoing description to detect the stored position information of this type of storer bit cell as phase transition storage or magnetic storage.
In sum, digital sensing and detection circuit proposed by the invention only comprises that very simple electric current is to electric pressure converter, replacement block circuit and sensing block circuit.So the difficulty of layout and design is extremely low, can improves the manufacturing qualification rate, and be highly suitable for LTPS technology, so can and then obtain a kind of can production in a large number and the memory component of practical.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing a little change and improvement, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (25)
1. digital sensing and detection circuit in order to the stored position information of the bit location in the sensing organic memory, is characterized in that this digital sensing and detection circuit comprises:
Electric current has current terminal to electric pressure converter, and the conduction current in order to according to this current terminal of flowing through converts voltage signal to; And
Sensing block circuit is connected to this electric current to electric pressure converter, in order to receive and according to this voltage signal, to cushion the stored position information of this bit location of output.
2. digital sensing and detection circuit according to claim 1 is characterized in that also comprising replacement block circuit, is connected to this electric current to electric pressure converter, in order to according to first switching signal, and this voltage signal of resetting.
3. digital sensing and detection circuit according to claim 2 is characterized in that this electric current to electric pressure converter comprises:
The first transistor, first source/drain electrode of this first transistor is connected to this electric current this current terminal to electric pressure converter, and the grid of this first transistor is connected to the second switch signal; And
Electric capacity has first end and second end, and this first end is connected to second source/drain electrode of this first transistor, and this second end is connected to first current potential, and this voltage signal is obtained by this first end.
4. digital sensing and detection circuit according to claim 3 is characterized in that this replacement block circuit comprises:
Transistor seconds, first source/drain electrode of this transistor seconds is connected to this first end of this electric capacity, and second source/drain electrode of this transistor seconds is connected to second current potential, and the grid of this transistor seconds is connected to this first switching signal,
Wherein this not conducting of transistor seconds when this first transistor conducting, this transistor seconds conducting during this not conducting of the first transistor.
5. digital sensing and detection circuit according to claim 4, it is different with the type of this transistor seconds to it is characterized in that working as this first transistor, then this first switching signal is identical with this second switch signal, when this first transistor is identical with the type of this transistor seconds, then this second switch signal is the anti-phase of this first switching signal.
6. digital sensing and detection circuit according to claim 5, it is characterized in that this first switching signal and this second switch signal are clock pulse signal, this digital sensing and detection circuit utilizes the responsibility cycle of this clock pulse signal, adjusts this first transistor and this transistor seconds other ON time.
7. digital sensing and detection circuit according to claim 4 is characterized in that this first current potential and this second current potential are all earth potential.
8. digital sensing and detection circuit according to claim 1 is characterized in that this sensing block circuit comprises:
The 3rd transistor, the 3rd transistorized first source/drain electrode is connected to the 3rd current potential, and the 3rd transistorized grid is connected to the 3rd switching signal; And
The 4th transistor, the 4th transistorized first source/drain electrode is connected to the 3rd transistorized second source/drain electrode, and the 4th transistorized second source/drain electrode is connected to first current potential, and the 4th transistorized grid is connected to this voltage signal,
Wherein when the 3rd not conducting of transistor, the stored position information of this bit location in this organic memory is exported in the 4th transistorized first source/drain electrode.
9. digital sensing and detection circuit according to claim 8 is characterized in that this sensing block circuit also comprises:
The 5th transistor, the 5th transistorized first source/drain electrode is connected to the 3rd current potential, and the 5th transistorized grid is connected to the 4th transistorized first source/drain electrode; And
The 6th transistor, the 6th transistorized first source/drain electrode is connected to the 5th transistorized second source/drain electrode, the 6th transistorized second source/drain electrode is connected to this first current potential, the 6th transistorized grid is connected to the 5th transistorized grid, and the 5th transistor AND gate the 6th transistorized type difference, the stored position information of this bit location in the 6th transistorized first source/this organic memory of drain electrode output.
10. digital sensing and detection circuit according to claim 9 is characterized in that the 5th transistor is the P transistor npn npn, and the 6th transistor is the N transistor npn npn.
11. digital sensing and detection circuit according to claim 10 is characterized in that this first current potential is an earth potential, the 3rd current potential is a power supply potential.
12. digital sensing and detection circuit according to claim 1 is characterized in that this sensing block circuit also is connected to sampling and holding circuit, exports the stored position information of this bit location in this organic memory in order to integer.
13. digital sensing and detection circuit according to claim 1 is characterized in that this organic memory is a nonvolatile memory.
14. a digital sensing and detection circuit, the stored position information of bit location in order in one in sensing phase transition storage and the magnetic storage is characterized in that this digital sensing and detection circuit comprises:
Electric current has current terminal to electric pressure converter, and the conduction current in order to according to this current terminal of flowing through converts voltage signal to; And
Sensing block circuit is connected to this electric current to electric pressure converter, in order to receive and according to this voltage signal, to cushion the stored position information of this bit location of output.
15. digital sensing and detection circuit according to claim 14 is characterized in that also comprising replacement block circuit, is connected to this electric current to electric pressure converter, in order to according to first switching signal, and this voltage signal of resetting.
16. digital sensing and detection circuit according to claim 15 is characterized in that this electric current to electric pressure converter comprises:
The first transistor, first source/drain electrode of this first transistor is connected to this electric current this current terminal to electric pressure converter, and the grid of this first transistor is connected to the second switch signal; And
Electric capacity has first end and second end, and this first end is connected to second source/drain electrode of this first transistor, and this second end is connected to first current potential, and this voltage signal is obtained by this first end.
17. digital sensing and detection circuit according to claim 16 is characterized in that this replacement block circuit comprises:
Transistor seconds, first source/drain electrode of this transistor seconds is connected to this first end of this electric capacity, and second source/drain electrode of this transistor seconds is connected to second current potential, and the grid of this transistor seconds is connected to this first switching signal,
Wherein this not conducting of transistor seconds when this first transistor conducting, this transistor seconds conducting during this not conducting of the first transistor.
18. digital sensing and detection circuit according to claim 17, it is different with the type of this transistor seconds to it is characterized in that working as this first transistor, then this first switching signal is identical with this second switch signal, when this first transistor is identical with the type of this transistor seconds, then this second switch signal is the anti-phase of this first switching signal.
19. digital sensing and detection circuit according to claim 18, it is characterized in that this first switching signal and this second switch signal are clock pulse signal, this digital sensing and detection circuit utilizes the responsibility cycle of this clock pulse signal, adjusts this first transistor and this transistor seconds other ON time.
20. digital sensing and detection circuit according to claim 17 is characterized in that this first current potential and this second current potential are all earth potential.
21. digital sensing and detection circuit according to claim 14 is characterized in that this sensing block circuit comprises:
The 3rd transistor, the 3rd transistorized first source/drain electrode is connected to the 3rd current potential, and the 3rd transistorized grid is connected to the 3rd switching signal; And
The 4th transistor, the 4th transistorized first source/drain electrode is connected to the 3rd transistorized second source/drain electrode, and the 4th transistorized second source/drain electrode is connected to first current potential, and the 4th transistorized grid is connected to this voltage signal,
Wherein when the 3rd not conducting of transistor, the stored position information of this bit location is exported in the 4th transistorized first source/drain electrode.
22. digital sensing and detection circuit according to claim 21 is characterized in that this sensing block circuit also comprises:
The 5th transistor, the 5th transistorized first source/drain electrode is connected to the 3rd current potential, and the 5th transistorized grid is connected to the 4th transistorized first source/drain electrode; And
The 6th transistor, the 6th transistorized first source/drain electrode is connected to the 5th transistorized second source/drain electrode, the 6th transistorized second source/drain electrode is connected to this first current potential, the 6th transistorized grid is connected to the 5th transistorized grid, and the 5th transistor AND gate the 6th transistorized type difference, the 6th transistorized first source/stored position information of drain electrode this bit location of output.
23. digital sensing and detection circuit according to claim 22 is characterized in that the 5th transistor is the P transistor npn npn, the 6th transistor is the N transistor npn npn.
24. digital sensing and detection circuit according to claim 23 is characterized in that this first current potential is an earth potential, the 3rd current potential is a power supply potential.
25. digital sensing and detection circuit according to claim 14 is characterized in that this sensing block circuit also is connected to sampling and holding circuit, exports the stored position information of this bit location in order to integer.
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| CN200510135696XA CN1996486B (en) | 2005-12-31 | 2005-12-31 | Digital sensing and detection circuit |
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| CN200510135696XA CN1996486B (en) | 2005-12-31 | 2005-12-31 | Digital sensing and detection circuit |
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| CN1996486A true CN1996486A (en) | 2007-07-11 |
| CN1996486B CN1996486B (en) | 2010-11-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101960529A (en) * | 2007-07-25 | 2011-01-26 | 技佳科技有限公司 | Agiga tech inc |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6108241A (en) * | 1999-07-01 | 2000-08-22 | Micron Technology, Inc. | Leakage detection in flash memory cell |
| WO2001073845A1 (en) * | 2000-03-28 | 2001-10-04 | Koninklijke Philips Electronics N.V. | Integrated circuit with programmable memory element |
| NO20004236L (en) * | 2000-08-24 | 2002-02-25 | Thin Film Electronics Asa | Non-volatile passive matrix device and method for reading the same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101960529A (en) * | 2007-07-25 | 2011-01-26 | 技佳科技有限公司 | Agiga tech inc |
| CN101960529B (en) * | 2007-07-25 | 2015-03-04 | 技佳科技有限公司 | Capacitor save energy verification |
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| CN1996486B (en) | 2010-11-03 |
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