CN100524519C - Organic memory - Google Patents
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- CN100524519C CN100524519C CNB2005101356974A CN200510135697A CN100524519C CN 100524519 C CN100524519 C CN 100524519C CN B2005101356974 A CNB2005101356974 A CN B2005101356974A CN 200510135697 A CN200510135697 A CN 200510135697A CN 100524519 C CN100524519 C CN 100524519C
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- 230000003139 buffering effect Effects 0.000 claims description 6
- 238000003860 storage Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 14
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
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Abstract
An organic storage comprises at least several optional lines, several data lines, potential matrix, and several digital sensing circuit. The potential matrix comprises several units, with each unit comprising organic storage unit and switch unit. Each digital sensing circuit comprises current to voltage converter and sensing block circuit. Above formed complete organic storage integrated circuit digital sensing mechanism can be a practical and feasible storage unit with mass production.
Description
Technical field
The present invention relates to a kind of storage arrangement, and particularly relate to a kind of organic memory that utilizes the organic material manufacturing.
Background technology
In recent years, a kind of bistable state (bistable) material is applied to making memory element and switch switch ... etc., this kind bistable material comprises inorganic material and organic material (organicmaterial), and this kind bistable material is along with the difference of the voltage that is applied thereto, and changes between high impedance status and low impedance state.It should be noted that and this organic material is arranged between two electrodes and the multistable memory element that produces has the potentiality of the non-volatile memory device that becomes a new generation.
With respect to silica-based element (
Device), the advantage that has preferable ductility and flexible etc. with the organic element of organic material manufacturing, and because organic material almost can be coated on any surface, therefore, make that forming organic memory array on the rubber-like plastic-substrates becomes possibility, in addition, organic material can just be made after silicon technology is finished and handle, and has further simplified whole technology.So because above-mentioned advantage and characteristic, must there be in the future more and more many typographies (printing manufacturing process) to be developed in the batch process that is applied to organic element, and make the cost of organic element significantly reduce, and use more extensive.
Fig. 1 is the idealized characteristic curve map of organic memory cell in a kind of organic memory, and this organic memory cell uses organic material to make, and please refer to Fig. 1.This organic memory cell has bistable characteristic at least, that is, can be in high impedance status or low impedance state at least.When organic storage unit was in high impedance status, the relation between its bias voltage and the conduction current was in high impedance status so work as organic storage unit shown in path 110, apply bias voltage V then
RIn this organic memory cell, the conduction current that then flows through this organic memory cell is I
0When the bias voltage that applies surpasses V
T1After, then this organic memory cell transfers to and is in low impedance state from being in high impedance status, and then, the relation between its bias voltage and the conduction current is shown in path 120, so be in low impedance state when organic storage unit, and the bias voltage that is applied is V
R, the conduction current that then flows through organic memory cell is I
1, I wherein
1I
0Then, be lower than V when the bias voltage that applies
T0After, then this organic memory cell transfers to and is in high impedance status from being in low impedance state again.Please note, by idealized, along with the difference of the employed organic material of organic memory cell, its family curve is some difference perhaps significantly for the family curve of Fig. 1, but the characteristic that organic memory utilized does not basically exceed the category of the idealized characteristic curve of above-mentioned key drawing 1.
From the above, the organic memory that use has the organic material manufacturing of bistable characteristic at least will have the crooked ability that contains, and can be used in the flexible flexible system with soft electronic component, the more important thing is that cost is not high, so will become one of a kind of most important electronic storage element in the hyundai electronics application.Therefore, develop a kind of practical and complete organic memory very urgent.
Summary of the invention
Purpose of the present invention just provides a kind of organic memory, and it uses organic memory cell and digital sensing and detection circuit etc., and forms the digital sensing mechanism in the complete memory integrated circuit, therefore, can be the memory component of a kind of batch process and practical.
From a kind of viewpoint, the present invention proposes a kind of organic memory, and this organic memory comprises: i bar selection wire, j bar data line, bit cell array and j digital sensing and detection circuit.This bit cell array comprises a plurality of bit locations, and each bit location comprises organic memory cell and on-off element, and organic memory cell stores at least one information.At least be connected with in these bit locations between each bar data line and each bar selection wire, and each digital sensing and detection circuit is connected to one in these data lines.Wherein, definition bit location row B (n) are for being connected to all bit locations of n bar selection wire, when n bar selection wire activates, on-off element in the bit location row B (n) can be connected to the organic memory cell in the bit location row B (n) on separately the data line, and these digital sensing and detection circuits are by these data line sensings and read the stored position information of organic memory cell in the bit location row B (n).Wherein i, j, n are all natural number and n＜=i, wherein, each digital sensing and detection circuit is to come this stored information of this organic memory cell of sensing according to the conduction current that flows through this organic memory cell, each digital sensing and detection circuit comprises: electric current is to electric pressure converter, in order to according to flowing through this electric current this conduction current, convert voltage signal to electric pressure converter; And sensing block circuit, be connected to this electric current to electric pressure converter, in order to reception and according to this voltage signal, this stored information of buffering this organic memory cell of output, wherein, this electric current to electric pressure converter comprises: the first transistor, and first source/drain electrode of this first transistor is connected in above-mentioned these data lines, and the grid of this first transistor is connected to first switching signal; Electric capacity has first end and second end, and this first end is connected to second source/drain electrode of this first transistor, and this second end is connected to first current potential, and this voltage signal is obtained by this first end; And transistor seconds, first source/drain electrode of this transistor seconds is connected to this first end of this electric capacity, second source/drain electrode of this transistor seconds is connected to second current potential, the grid of this transistor seconds is connected to the second switch signal, wherein this not conducting of transistor seconds when this first transistor conducting, this transistor seconds conducting during this not conducting of the first transistor.
From another kind of viewpoint, the present invention proposes a kind of organic memory in addition, and this organic memory comprises: i bar selection wire, j bar data line, bit cell array, multiplexer and digital sensing and detection circuit.This bit cell array comprises a plurality of bit locations, at least be connected with in these bit locations between each bar data line and each bar selection wire, and each bit location comprises organic memory cell and on-off element, and organic memory cell stores at least one information.Above-mentioned multiplexer has an output terminal, a selecting side and a plurality of input end, and these input ends are connected to one in above-mentioned these data lines separately, output terminal is connected to digital sensing and detection circuit, this multiplexer can be according to the selecting side, be connected to output terminal with one in these input ends, that is, be connected to digital sensing and detection circuit with one in these data lines.Wherein, definition bit location row B (n) are for being connected to all bit locations of n bar selection wire, definition bit location M (m, n) for being connected to the bit location of m bar data line and n bar selection wire, when n bar selection wire activates, and when multiplexer makes digital sensing and detection circuit be connected to m bar data line, on-off element in the bit location row B (n) can be connected to the organic memory cell in the bit location row B (n) on separately these data lines, and digital sensing and detection circuit sensing and read bit location M (m, n) the stored position information of Nei organic memory cell, above-mentioned i, j, m, n is all natural number and n＜=i, m＜=j, wherein, this digital sensing and detection circuit is to come this stored information of this organic memory cell of sensing according to the conduction current that flows through this organic memory cell, this digital sensing and detection circuit comprises: electric current in order to according to flowing through this electric current this conduction current to electric pressure converter, converts voltage signal to electric pressure converter to; And sensing block circuit, be connected to this electric current to electric pressure converter, in order to reception and according to this voltage signal, this stored information of buffering this organic memory cell of output, wherein, this electric current to electric pressure converter comprises: the first transistor, and first source/drain electrode of this first transistor is connected to this output terminal of this multiplexer, and the grid of this first transistor is connected to first switching signal; Electric capacity has first end and second end, and this first end is connected to second source/drain electrode of this first transistor, and this second end is connected to first current potential, and this voltage signal is obtained by this first end; And transistor seconds, first source/drain electrode of this transistor seconds is connected to this first end of this electric capacity, second source/drain electrode of this transistor seconds is connected to second current potential, the grid of this transistor seconds is connected to the second switch signal, wherein this not conducting of transistor seconds when this first transistor conducting, this transistor seconds conducting during this not conducting of the first transistor.
Described according to embodiments of the invention, digital sensing and detection circuit in the organic memory of above-mentioned two kinds of viewpoints all is to come the stored position information of this organic memory cell of sensing according to the conduction current that flows through organic memory cell, wherein, digital sensing and detection circuit comprises that electric current is to electric pressure converter and sensing block circuit.Electric current to electric pressure converter basis flows through the conduction current of this electric current to electric pressure converter, converts thereof into voltage signal.And sensing block circuit is connected to electric current to electric pressure converter, and its reception and according to above-mentioned voltage signal is with the stored position information of buffering output organic memory cell.
Above-mentioned electric current to electric pressure converter comprises: the first transistor, electric capacity and transistor seconds.First source/drain electrode of this first transistor connects so far electric current to the electric current of electric pressure converter and exports end (can be or the output terminal of multiplexer that is connected in the j bar data line), and the grid of the first transistor is connected to first switching signal.This electric capacity has first end and second end, and first end is connected to second source/drain electrode of the first transistor, and second end is connected to first current potential, and voltage signal first end acquisition thus.First source/drain electrode of this transistor seconds is connected to first end of electric capacity, and second source/drain electrode of transistor seconds is connected to second current potential, and the grid of transistor seconds is connected to the second switch signal.Wherein, not conducting of transistor seconds when the first transistor conducting, and transistor seconds conducting during not conducting of the first transistor.For example, if the first transistor is identical with the type of transistor seconds, then the second switch signal is the anti-phase of first switching signal; If the first transistor is different with the type of transistor seconds, then first switching signal is identical with the second switch signal.Among the embodiment, above-mentioned first current potential is an earth potential for example, and above-mentioned second current potential for example is a power supply potential.
Above-mentioned sensing block circuit comprises the 3rd transistor and the 4th transistor.This 3rd transistorized first source/drain electrode is connected to second current potential, and the 3rd transistorized grid is connected to voltage signal.This 4th transistorized first source/drain electrode is connected to the 3rd transistorized second source/drain electrode, and the 4th transistorized second source/drain electrode is connected to first current potential, and the 4th transistorized grid is connected to first switching signal.Wherein, when the 4th not conducting of transistor, the 3rd transistorized second source/stored position information of drain electrode output organic memory cell.In the application of embodiment, also have sampling and holding circuit to connect the output of sensing area piece circuit so far, with the stored position information of integer output organic memory cell.
The attention of value be that organic memory provided by the present invention can be used as nonvolatile memory and uses.
In sum, organic memory proposed by the invention includes many selection wires, many data lines, bit cell array and digital sensing and detection circuits etc. at least, thereby form the digital sensing mechanism of complete memory integrated circuit, so can be a kind of batch process the in batches and the memory component of practical.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the idealized characteristic curve map of organic memory cell in a kind of organic memory.
Fig. 2 is the circuit block diagram of a kind of organic memory of one embodiment of the invention.
Fig. 3 is the circuit diagram of a kind of embodiment of Fig. 2 bit cell.
Fig. 4 is the circuit diagram of a kind of embodiment of digital sensing and detection circuit among Fig. 2.
Fig. 5 is each signal timing diagram of the digital sensing and detection circuit of Fig. 4.
Fig. 6 is the circuit block diagram of a kind of organic memory of another embodiment of the present invention.
Fig. 7 is the circuit block diagram of a kind of organic memory of further embodiment of this invention.
Fig. 8 is the circuit diagram of a kind of embodiment of Fig. 7 bit cell.
The main element description of symbols
210: bit cell array
220_1,220_2 ..., 220_j, 620: digital sensing and detection circuit
310,810: organic memory cell
320,820,830: on-off element
322,412,416,422,426,822,832: transistor
410: electric current is to electric pressure converter
413: first end of electric capacity
414: electric capacity
415: second end of electric capacity
418,434,436: phase inverter
420: sensing block circuit
430: sampling and holding circuit
432: switch
610: multiplexer
824,826,828,834,836,838: end points
BL_1, BL_2, BL_j, BL_m: data line
M (1,1), M (2,1), M (j, 1), M (1, i), M (2, i), M (j, i): bit location
WL_1, WL_i, WL_n: selection wire
RWL_1, RWL_i, RWL_n: read selection wire
WWL_1, WWL_i, WWL_n: write selection wire
Embodiment
Fig. 2 is the circuit block diagram of a kind of organic memory of one embodiment of the invention, please refer to Fig. 2.A kind of organic memory proposed by the invention comprises: i bar selection wire WL_1 ..., WL_i, j bar data line BL_1, BL_2 ..., BL_j, bit cell array 210 and j digital sensing and detection circuit 220_1,220_2 ..., 220_j.And comprise a plurality of bit location M (1,1), M (2,1) in the bit cell array 210, ..., M (j, 1) ..., M (1, i), M (2, i), ..., M (j, i), by among the figure as can be known, at least be connected with in these bit locations between each bar data line and each bar selection wire, and each digital sensing and detection circuit 220_1,220_2 ..., 220_j is connected to corresponding these data lines BL_1 respectively, BL_2 ..., BL_j.Wherein, in order clearly to express easily, so definition bit location row B (n) are for being connected to all bit location M (1 of n bar selection wire, n), and M (2, n), ..., M (j, n), and definition bit location M (m, n) for being connected to the bit location of m bar data line and n bar selection wire, above-mentioned i, j, m, n are all the positive integer (natural number) greater than zero, and n＜=i, m＜=j.
Fig. 3 is the circuit diagram of a kind of embodiment of Fig. 2 bit cell, please refer to Fig. 3.Each bit location comprises organic memory cell 310 and on-off element 320 in the bit cell array, when the on-off element conducting, the external world of organic memory cell and bit location can be connected.Organic memory cell 310 for example is that organic material is arranged between two electrodes and the multistable memory element that produces, so organic memory cell can be used to bit of storage information, natch, an organic memory cell does not limit and can only store one information.And on-off element 320 is transistor 322 in this embodiment, first source/drain electrode of transistor 322 is connected in the above-mentioned data line, and the grid of transistor 322 is connected to one in the above-mentioned selection wire, and second source/drain electrode of transistor 322 is connected to organic memory cell 310.Transistor 322 among this embodiment is to use the N transistor npn npn, natch, also can use other as the P transistor npn npn.
Please be simultaneously with reference to Fig. 2 and Fig. 3, when n bar selection wire activates, on-off element in the bit location row B (n) can be connected to the organic memory cell in the bit location row B (n) on separately the data line, and these digital sensing and detection circuits 220_1,220_2 ..., the data line BL_1 of 220_j by connecting separately, BL_2 ..., BL_j comes sensing and reads the interior stored position information of organic memory cell of bit location row B (n).
Digital sensing and detection circuit mainly is to come the stored position information of this organic memory cell of sensing according to the conduction current that flows through organic memory cell.Fig. 4 is the circuit diagram of a kind of embodiment of digital sensing and detection circuit among Fig. 2, please refer to Fig. 4.Digital sensing and detection circuit comprises electric current to electric pressure converter 410 and sensing block circuit 420, and details are as follows respectively.
Electric current to electric pressure converter 410 bases flow through the conduction current I_out of itself, convert thereof into the voltage signal on the node A.This electric current to electric pressure converter 410 mainly comprises: the first transistor 412, electric capacity 414 and transistor seconds 416.First source/drain electrode of the first transistor 412 connects so far electric current to the electric current of electric pressure converter 410 and exports into end, conduction current I_out promptly flows through this electric current and exports into end, and the grid of the first transistor 412 is connected to the first switching signal SW, and second source/drain electrode of the first transistor 412 is connected to node A.Electric capacity 414 has second source/drain electrode (node A) that first end 413 and second end, 415, the first ends 413 are connected to the first transistor 412, and second end 415 is connected to first current potential, for example is earth potential.The voltage signal of node A is as the output signal of this electric current to electric pressure converter 410, and being actually thus, first end 413 of electric capacity 414 obtains.First source/drain electrode of transistor seconds 416 is connected to first end 413 of electric capacity 414, and second source/drain electrode of transistor seconds 416 is connected to second current potential, for example be power supply potential VDD, and the grid of transistor seconds 416 is connected to second switch signal/SW.
Electric current of the present invention to electric pressure converter 410 for the designing requirement of the first transistor 412 and transistor seconds 416 is: transistor seconds 416 not conductings when the first transistor 412 conductings, and transistor seconds 416 conductings during the first transistor 412 not conductings.For example, if the first transistor 412 is identical with the type of transistor seconds 416, then second switch signal/SW is the anti-phase of the first switching signal SW; If the first transistor 412 is different with the type of transistor seconds 416, then the first switching signal SW is identical with second switch signal/SW.In this embodiment, the first transistor 412 all is exemplified as the P transistor npn npn with transistor seconds 416, so be provided with phase inverter 418 between the second switch signal/SW and the first switching signal SW, so that second switch signal/SW is the anti-phase of the first switching signal SW, but the present invention is also non-limiting like this, as long as can meet the designing requirement of the first transistor 412 with transistor seconds 416.
Note that above-mentioned first current potential for example is earth potential, and above-mentioned second current potential for example is a power supply potential, but the present invention and non-limiting like this.
In the application of the embodiment of Fig. 4, also have sampling and holding circuit 430 to connect the Dsc_Out signal that sensing area piece circuit 420 is so far exported, with the stored position information of integer output organic memory cell.Sampling and holding circuit 430 comprise: switch 432 and the bolt lock device of being made up of phase inverter 434 and phase inverter 436.This switch 432 is according to sampled signal S, in 412 conduction periods of the first transistor, the Dsc_Out signal is connected to the bolt lock device of being made up of phase inverter 434 and phase inverter 436, with the stored position information of integer output organic memory cell.
Fig. 5 is each signal timing diagram of the digital sensing and detection circuit of Fig. 4, please be simultaneously with reference to Fig. 4 and Fig. 5.By among the figure as can be known, the first transistor 412 all is exemplified as the P transistor npn npn with transistor seconds 416, and second switch signal/SW is the anti-phase of the first switching signal SW, so when the first switching signal SW is that noble potential and second switch signal/SW are when being the semiperiod of electronegative potential, make the first transistor 412 not conductings and transistor seconds 416 conductings, be precharged to electric capacity 414 this moment, and the voltage signal of node A remains on noble potential.Then when the first switching signal SW be electronegative potential and second switch signal/SW when being the semiperiod of noble potential, make the first transistor 412 conductings and transistor seconds 416 not conductings, the externally discharge and conduction current flows out of electric capacity 414 this moment.Because the conduct electricity flow that flows out is relevant with the state (the position information of being stored) of organic memory cell, the conduction current of conduction current when organic storage unit is in low impedance state when organic memory cell is in high impedance status, therefore when organic storage unit is in low impedance state, electric capacity 414 rapid discharges, the voltage of node A is reduced to electronegative potential rapidly, make 422 conductings of the 3rd transistor, and the Dsc_Out signal becomes noble potential.Relatively, when organic storage unit was in high impedance status, electric capacity 414 discharges were slow, and the voltage of node A can change hardly, make the 3rd transistor 422 keep not conducting, and the Dsc_Out signal is kept electronegative potential.Therefore, the position information that this moment, on behalf of organic memory cell, the Dsc_Out signal just can store.Sampling and holding circuit 430 be according to sampled signal S, with Dsc_Out signal integer Cheng Buhui along with the semiperiod changes, and the output signal Out of the stored position information of the simple expression of output organic memory cell.
Fig. 6 is the circuit block diagram of a kind of organic memory of another embodiment of the present invention, please refer to Fig. 6.A kind of organic memory that this embodiment proposed comprises: i bar selection wire WL_1 ..., WL_i, j bar data line BL_1, BL_2 ..., BL_j, bit cell array 210, multiplexer 610 and digital sensing and detection circuit 620.Except multiplexer 610 and digital sensing and detection circuit 620, remaining circuit is identical with the embodiment of Fig. 2, repeats no more among the figure.Multiplexer 610 has an output terminal, a selecting side and a plurality of input end, and these input ends are connected to these data lines BL_1 separately, BL_2, ..., among the BL_j one, and output terminal is connected to digital sensing and detection circuit 620, therefore, multiplexer can be according to the selection signal Sel of selecting side, is connected to output terminal with one in these input ends, that is, with these data lines BL_1, BL_2 ..., one among the BL_j is connected to digital sensing and detection circuit 620.When n bar selection wire activates, and when multiplexer 610 makes digital sensing and detection circuit be connected to m bar data line, on-off element in the bit location row B (n) can be connected to the organic memory cell in the bit location row B (n) on separately these data lines, and digital sensing and detection circuit 620 sensings and read bit location M (m, n) the stored position information of Nei organic memory cell.Different ground, it is the output terminal that is connected to multiplexer that digital sensing and detection circuit 620 interior electric current to the electric currents of electric pressure converter are exported into end, rather than as any one digital sensing and detection circuit of Fig. 2, it is one that is connected directly in the j bar data line that its electric current to the electric current of electric pressure converter is exported end.
Fig. 7 is the circuit block diagram of a kind of organic memory of further embodiment of this invention, please refer to Fig. 7.A kind of organic memory that this embodiment proposed comprises: the i bar writes selection wire WWL_1, ..., WWL_i, i bar are read selection wire RWL_1 ..., RWL_i, j bar data line BL_1, BL_2, ..., BL_j, bit cell array 210 and j digital sensing and detection circuit 220_1,220_2, ..., 220_j.Most circuit is identical with the embodiment of Fig. 2 among the figure, so repeat no more.But, each the bit location M (1,1) in the bit cell array 210, M (2,1) ..., M (j, 1), ..., (1, i), M (2 for M, i) ..., (j is not only to be operated by single selection wire i) to M, write selection wire WWL_1 but activate ..., any one among the WWL_i is carried out write operation, or activate and to read selection wire RWL_1 ..., any one among the RWL_i is carried out read operation.
Fig. 8 is the circuit diagram of a kind of embodiment of Fig. 7 bit cell, please refer to Fig. 8.Express the bit location M (m of organic memory among the figure, n), this bit location M (m, n) be connected to data line BL_m, write selection wire WWL_n and read selection wire RWL_n, (m n) comprising this bit location M: organic memory cell 810, first on-off element 820 and second switch element 830.Identical among organic memory cell 810 and Fig. 3 is so repeat no more.
Please continue with reference to Fig. 8,820 in first switch unit has first end 824, second end 826 and control end 828, first end 824 of first on-off element 820 is connected to data line BL_m, the control end 828 of first on-off element 820 is connected to and writes selection wire WWL_n, and second end 826 of first on-off element 820 is connected to organic memory cell 810, in addition, second switch element 830 also has first end 834, second end 836 and control end 838, first end 834 of second switch element 830 is connected to data line BL_m, the control end 838 of second switch element 830 is connected to reads selection wire RWL_n, and second end 836 of second switch element 830 is connected to organic memory cell 810.When the signal on writing selection wire WWL_n activated, first on-off element 820 was connected to data line BL_m with organic memory cell 810, to write an information to organic memory cell 810; When signal on reading selection wire RWL_n activated, second switch element 830 was connected to data line BL_m with organic memory cell 810, with the stored position information of sensing organic memory cell 810.
First on-off element 820 is respectively the first transistor 822 and transistor seconds 832 in this embodiment with second switch element 830, then: first source/drain electrode of the first transistor 822 is connected to data line BL_m, and the grid of the first transistor 822 is connected to and writes selection wire WWL_n, and second source/drain electrode of the first transistor 822 is connected to organic memory cell 810; First source/drain electrode of transistor seconds 832 also is connected to data line BL_m, and the grid of transistor seconds 832 is connected to and reads selection wire RWL_n, and second source/drain electrode of transistor seconds 832 also is connected to organic memory cell 810.First and second transistor 822 among this embodiment, 832 all are to use the N transistor npn npn, but and non-limiting the present invention, also can use various metal-oxide semiconductor (MOS)s (MOS) transistor etc., natch, also can use other as the P transistor npn npn, or one is used P transistor npn npn, a use N transistor npn npn.
Preferably, the size of the first transistor 822 in the bit location of the organic memory of present embodiment is greater than the size of transistor seconds 832.When the signal on writing selection wire WWL_n activates, the first transistor 822 is connected to data line BL_m with organic memory cell, to write an information to organic memory cell 810, because the size of the first transistor 822 is bigger, so write and fashionablely can pass through bigger electric current, to reduce the required time of state that changes organic memory cell 810; When the signal on reading selection wire RWL_n activates, transistor seconds 832 is connected to data line with organic memory cell 810, with the position information of coming sensing organic memory cell 810 according to the conduction current that flows through organic memory cell 810, again because the size of transistor seconds 832 is less, so the stray capacitance of transistor seconds 832 is less equally, and reduced the grid load, speed the time of reading processing.
Because organic material can't be along with the disappearance of bias voltage, and changes its residing state, uses so organic memory provided by the present invention can be used as nonvolatile memory.
In sum, a kind of organic memory proposed by the invention includes many selection wires, many data lines, bit cell array and a plurality of digital sensing and detection circuits etc. at least, and another kind of organic memory proposed by the invention has also increased the use that multiplexer reduces digital sensing and detection circuit, and two kinds of organic memories all have complete storage array and digital sensing mechanism.In addition, the present invention has used the simplest sensing circuit, so the challenge of layout and design is extremely low, can improve the qualification rate of production, and is highly suitable for LTPS technology, therefore, is the memory component of a kind of batch process and practical.
Though the present invention discloses as above with embodiment; right its is not in order to qualification the present invention, any person of ordinary skill in the field, without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection domain is as the criterion when looking the claim person of defining.
Claims (16)
1. organic memory is characterized in that comprising:
I bar selection wire;
J bar data line;
Bit cell array, comprise a plurality of bit locations, be connected with in above-mentioned these bit locations between each bar data line and each bar selection wire, each bit location comprises organic memory cell and on-off element, and this organic memory cell is in order to store at least one information; And
J digital sensing and detection circuit, each digital sensing and detection circuit are connected in above-mentioned these data lines,
Wherein, definition bit location row B (n) are for being connected to all bit locations of n bar selection wire, when n bar selection wire activates, this on-off element in the bit location row B (n) can be connected to this organic memory cell in the bit location row B (n) on separately above-mentioned these data lines, above-mentioned these digital sensing and detection circuits are by above-mentioned these data line sensings and read interior this stored information of this organic memory cell of bit location row B (n), i, j, n are all natural number and n＜=i
Wherein, each digital sensing and detection circuit is to come this stored information of this organic memory cell of sensing according to the conduction current that flows through this organic memory cell, each digital sensing and detection circuit comprises: electric current is to electric pressure converter, in order to according to flowing through this electric current this conduction current, convert voltage signal to electric pressure converter; And sensing block circuit, be connected to this electric current to electric pressure converter, in order to reception and according to this voltage signal, this stored information of buffering this organic memory cell of output,
Wherein, this electric current to electric pressure converter comprises: the first transistor, and first source/drain electrode of this first transistor is connected in above-mentioned these data lines, and the grid of this first transistor is connected to first switching signal; Electric capacity has first end and second end, and this first end is connected to second source/drain electrode of this first transistor, and this second end is connected to first current potential, and this voltage signal is obtained by this first end; And transistor seconds, first source/drain electrode of this transistor seconds is connected to this first end of this electric capacity, second source/drain electrode of this transistor seconds is connected to second current potential, the grid of this transistor seconds is connected to the second switch signal, wherein this not conducting of transistor seconds when this first transistor conducting, this transistor seconds conducting during this not conducting of the first transistor.
2. organic memory according to claim 1 it is characterized in that this first transistor is identical with the type of this transistor seconds, and this second switch signal is the anti-phase of this first switching signal.
3. organic memory according to claim 1 is characterized in that this first transistor is different with the type of this transistor seconds, and this first switching signal is identical with this second switch signal.
4. organic memory according to claim 1 is characterized in that this first current potential is an earth potential, and this second current potential is a power supply potential.
5. organic memory according to claim 1 is characterized in that this sensing block circuit comprises:
The 3rd transistor, the 3rd transistorized first source/drain electrode is connected to second current potential, and the 3rd transistorized grid is connected to this voltage signal; And
The 4th transistor, the 4th transistorized first source/drain electrode is connected to the 3rd transistorized second source/drain electrode, and the 4th transistorized second source/drain electrode is connected to first current potential, and the 4th transistorized grid is connected to first switching signal,
Wherein when the 4th not conducting of transistor, this stored information of this organic memory cell is exported in the 3rd transistorized second source/drain electrode.
6. organic memory according to claim 1 is characterized in that this sensing block circuit also is connected to sampling and holding circuit, exports this stored information of this organic memory cell in order to integer.
7. organic memory according to claim 1, it is characterized in that this on-off element comprises transistor, this transistorized first source/drain electrode is connected in above-mentioned these data lines, this transistorized grid is connected in above-mentioned these selection wires, and this transistorized second source/drain electrode is connected to this organic memory cell.
8. organic memory according to claim 1 is characterized in that this organic memory is a nonvolatile memory.
9. organic memory is characterized in that comprising:
I bar selection wire;
J bar data line;
Bit cell array, comprise a plurality of bit locations, be connected with in above-mentioned these bit locations between each bar data line and each bar selection wire, each bit location comprises organic memory cell and on-off element, and this organic memory cell is in order to store at least one information;
Multiplexer, have a plurality of input ends, a selecting side and an output terminal, above-mentioned these input ends are connected in above-mentioned these data lines separately, and this multiplexer is according to this selecting side, are connected to this output terminal with one of in above-mentioned these input ends; And
Digital sensing and detection circuit is connected to this output terminal of this multiplexer,
Wherein, definition bit location row B (n) are for being connected to all bit locations of n bar selection wire, definition bit location M (m, n) for being connected to the bit location of m bar data line and n bar selection wire, when n bar selection wire activates, and when this multiplexer makes this digital sensing and detection circuit be connected to m bar data line, this on-off element in the bit location row B (n) can be connected to this organic memory cell in the bit location row B (n) on separately above-mentioned these data lines, this digital sensing and detection circuit sensing is also read bit location M (m, n) this stored information of Nei this organic memory cell, above-mentioned i, j, m, n is all natural number and n＜=i, m＜=j
Wherein, this digital sensing and detection circuit is to come this stored information of this organic memory cell of sensing according to the conduction current that flows through this organic memory cell, this digital sensing and detection circuit comprises: electric current is to electric pressure converter, in order to according to flowing through this electric current this conduction current, convert voltage signal to electric pressure converter; And sensing block circuit, be connected to this electric current to electric pressure converter, in order to reception and according to this voltage signal, this stored information of buffering this organic memory cell of output,
Wherein, this electric current to electric pressure converter comprises: the first transistor, and first source/drain electrode of this first transistor is connected to this output terminal of this multiplexer, and the grid of this first transistor is connected to first switching signal; Electric capacity has first end and second end, and this first end is connected to second source/drain electrode of this first transistor, and this second end is connected to first current potential, and this voltage signal is obtained by this first end; And transistor seconds, first source/drain electrode of this transistor seconds is connected to this first end of this electric capacity, second source/drain electrode of this transistor seconds is connected to second current potential, the grid of this transistor seconds is connected to the second switch signal, wherein this not conducting of transistor seconds when this first transistor conducting, this transistor seconds conducting during this not conducting of the first transistor.
10. organic memory according to claim 9 it is characterized in that this first transistor is identical with the type of this transistor seconds, and this second switch signal is the anti-phase of this first switching signal.
11. organic memory according to claim 9 is characterized in that this first transistor is different with the type of this transistor seconds, and this first switching signal is identical with this second switch signal.
12. organic memory according to claim 9 is characterized in that this first current potential is an earth potential, this second current potential is a power supply potential.
13. organic memory according to claim 9 is characterized in that this sensing block circuit comprises:
The 3rd transistor, the 3rd transistorized first source/drain electrode is connected to second current potential, and the 3rd transistorized grid is connected to this voltage signal; And
The 4th transistor, the 4th transistorized first source/drain electrode is connected to the 3rd transistorized second source/drain electrode, and the 4th transistorized second source/drain electrode is connected to first current potential, and the 4th transistorized grid is connected to first switching signal,
Wherein when the 4th not conducting of transistor, this stored information of this organic memory cell is exported in the 3rd transistorized second source/drain electrode.
14. organic memory according to claim 9 is characterized in that this sensing block circuit also is connected to sampling and holding circuit, exports this stored information of this organic memory cell in order to integer.
15. organic memory according to claim 9, it is characterized in that this on-off element comprises transistor, this transistorized first source/drain electrode is connected in above-mentioned these data lines, this transistorized grid is connected in above-mentioned these selection wires, and this transistorized second source/drain electrode is connected to this organic memory cell.
16. organic memory according to claim 9 is characterized in that this organic memory is a nonvolatile memory.
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