CN1992277A - Metal-insulator-metal type capacitance structure and producing method thereof - Google Patents
Metal-insulator-metal type capacitance structure and producing method thereof Download PDFInfo
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- CN1992277A CN1992277A CN 200510137452 CN200510137452A CN1992277A CN 1992277 A CN1992277 A CN 1992277A CN 200510137452 CN200510137452 CN 200510137452 CN 200510137452 A CN200510137452 A CN 200510137452A CN 1992277 A CN1992277 A CN 1992277A
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- insulator
- sandwich construction
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Abstract
A metal-insulator-metal capacitor structure comprises at least the top electrode, the bottom electrode and the insulating layer, in which the insulating layer is located between the top electrode and the bottom electrode. The characteristic of the metal-insulator-metal capacitor structure is that the bottom electrode includes a conductor layer and a metal nitride multilayer structure. The metal nitride multilayer structure is located between the conductor layer and the insulation layer, and its nitrogen content is gradually increased to the insulation layer direction, and being the amorphous form. As the metal nitride multilayer structure relationship, it avoids the insulation layer to form crystallization, in order to reduce the leakage current losses.
Description
Technical field
The present invention relates to a kind of metal-insulator-metal type (Metal-Insulator-Metal, be abbreviated as MIM) capacitance structure and manufacture method thereof, and be particularly related to a kind of metal-insulator-metal type capacitance structure and manufacture method thereof of avoiding bottom electrode to bring out the insulating barrier crystallization.
Background technology
The electric capacity of metal-insulator-metal type (MIM) structure will be the following principal mode of DRAM electric capacity from generation to generation, and use high-k (high-k) material as insulating barrier, just can obtain enough capacitances under the capacity area of dwindling.And the resistance value of the electrode material of crystal habit is lower, has preferable conductive effect, therefore this material of the many employings of the electrode of present metal-insulator-metal type (MIM) capacitance structure.But in the electric capacity manufacture process, the insulating material that the electrode material of crystal habit can bring out its top forms crystallization, for high dielectric constant material, will produce bigger leakage current.This is because the existence of crystal boundary in the crystalline material is the factor that causes the loss of charge maximum, and the thermal stability variation in follow-up transistor high-temperature heat treatment process, causes capacitance to descend.
Summary of the invention
Purpose of the present invention just provides a kind of metal-insulator-metal type (MIM) capacitance structure, has the advantage of low electric leakage.
A further object of the present invention provides a kind of manufacture method of metal-insulator-metal type capacitance structure, with the quality of effective raising electric capacity, and then significantly increases the application feasibility of high dielectric constant film material at the DRAM capacity cell.
The present invention proposes a kind of metal-insulator-metal type (MIM) capacitance structure, comprises top electrode (upperelectrode), bottom electrode (lower electrode) and insulating barrier, and wherein insulating barrier is between top electrode and bottom electrode.And this metal-insulator-metal type capacitance structure is characterised in that bottom electrode comprises one deck conductor layer and metal nitride sandwich construction (metal nitride multilayer structure).The metal nitride sandwich construction is between conductor layer and insulating barrier, and wherein the nitrogen content of metal nitride sandwich construction increases to the direction of insulating barrier gradually, and the metal nitride sandwich construction is noncrystalline (amorphous) form.
According to the described structure of preferred embodiment of the present invention, above-mentioned conductor layer can be identical with the material of metal nitride sandwich construction.
According to the described structure of preferred embodiment of the present invention, the material of above-mentioned metal nitride sandwich construction comprises TiN or TaN.
According to the described structure of preferred embodiment of the present invention, above-mentioned metal nitride sandwich construction which floor ultrathin membrane (ultrathin film) is made of, and wherein the thickness of each layer ultrathin membrane of metal nitride sandwich construction is between a few dust to tens dusts.In addition, the number of plies of aforementioned ultrathin membrane for example is more than three layers.
According to the described structure of preferred embodiment of the present invention, the material of above-mentioned conductor layer comprises electric conducting materials such as TiN, TaN, Ru, Pt or polysilicon.
According to the described structure of preferred embodiment of the present invention, the material of insulating barrier comprises high-k (high-k) material, as Ta
2O
5, Al
2O
3, HfO
2Or TiO
2
The present invention proposes a kind of manufacture method of metal-insulator-metal type capacitance structure, and comprising provides conductor layer earlier, forms the metal nitride sandwich construction again on conductor layer, so that itself and conductor layer composition bottom electrode.Wherein, the metal nitride sandwich construction is non-crystal habit and its nitrogen content increases gradually with the number of plies of bottom electrode.Then, on this metal nitride sandwich construction of bottom electrode, form insulating barrier, on insulating barrier, form top electrode again.
According to the described method of preferred embodiment of the present invention, on to be set forth on the conductor layer method that forms the metal nitride sandwich construction be to utilize chemical vapour deposition (CVD) (Chemical Vapor Deposition, CVD), physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) or ald (AtomicLayer Deposition, ALD) equal vacuum thin film deposition system.
According to the described method of preferred embodiment of the present invention, above-mentioned conductor layer can be identical with the material of metal nitride sandwich construction.
According to the described method of preferred embodiment of the present invention, the material of above-mentioned metal nitride sandwich construction comprises TiN or TaN.
According to the described method of preferred embodiment of the present invention, above-mentioned metal nitride sandwich construction is made of which floor ultrathin membrane.
According to the described method of preferred embodiment of the present invention, the material of above-mentioned conductor layer comprises TiN, TaN, Ru, Pt or polysilicon.
According to the described method of preferred embodiment of the present invention, the material of above-mentioned insulating barrier comprises high dielectric constant material, as Ta
2O
5, Al
2O
3, Hf
xAl
yO, HfO
2Or TiO
2
The present invention is because adopt the metal nitride sandwich construction of noncrystalline form near the part of insulating barrier at bottom electrode, and wherein the nitrogen content of metal nitride sandwich construction increases to the direction of insulating barrier gradually, so can reduce the crystallinity of insulating barrier, and then effectively improve the quality of electric capacity.
For above and other objects of the present invention, feature and advantage can be become apparent, the present invention's cited below particularly preferred embodiment, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the profile according to the metal-insulator-metal type of one of the present invention preferred embodiment (MIM) capacitance structure.
Fig. 2 is the manufacturing process block diagram according to metal-insulator-metal type (MIM) capacitance structure of another preferred embodiment of the present invention.
The main element description of symbols
100: top electrode
110: bottom electrode
112: conductor layer
114: the metal nitride sandwich construction
120: insulating barrier
200～230: step
Embodiment
Fig. 1 is the profile according to the metal-insulator-metal type of one of the present invention preferred embodiment (MIM) capacitance structure.
Please refer to Fig. 1, the metal-insulator-metal type of present embodiment (MIM) capacitance structure comprises top electrode 100, bottom electrode 110 and insulating barrier 120, and wherein insulating barrier 120 is between top electrode 100 and bottom electrode 110.And, bottom electrode 110 is by one deck conductor layer 112 and 114 formations of metal nitride sandwich construction (multilayer structure metal nitride layer), this layer metal nitride sandwich construction 114 is between conductor layer 112 and insulating barrier 120, wherein the nitrogen content of metal nitride sandwich construction 114 increases to the direction of insulating barrier 120 gradually, and metal nitride sandwich construction 114 is non-crystal habits.
Referring again to Fig. 1, above-mentioned metal nitride sandwich construction 114 which floor ultrathin membrane (ultrathinfilm) is made of, and the thickness of each layer ultrathin membrane for example be about several dusts () between tens dusts, be preferably 5～10 Izod right sides.In addition, the number of plies of aforementioned ultrathin membrane for example is more than three layers.And the material of above-mentioned metal nitride sandwich construction 114 for example is TiN or TaN.The material of conductor layer 112 for example is TiN, TaN, Ru, Pt or polysilicon any suitable electric conducting materials such as (poly Si).Therefore, can to select with the material of metal nitride sandwich construction 114 be identical or different for conductor layer 112.When the material of metal nitride sandwich construction 114 and conductor layer 112 are identical, can increase the tack between conductor layer 112 and the insulating barrier 120, so this metal nitride sandwich construction 114 can be considered the resilient coating (buffer layer) between conductor layer 112 and the insulating barrier 120, can effectively reduce the technology cost in addition.And the material of insulating barrier 120 is preferably high-k (high-k) material, as Ta
2O
5, Al
2O
3, Hf
xAl
yO, HfO
2Or TiO
2
Because this embodiment adopts the metal nitride sandwich construction of noncrystalline form, make insulating barrier be difficult for forming crystal habit, can bear the hot environment of subsequent technique, improve the interfacial characteristics of bottom electrode and insulating barrier simultaneously, and then effectively improve the quality of metal-insulator-metal type capacitance structure.
Fig. 2 is the manufacturing process block diagram according to the metal-insulator-metal type capacitance structure of another preferred embodiment of the present invention.
Please refer to Fig. 2, in step 200, provide conductor layer, the material of conductor layer for example is any suitable electric conducting materials such as TiN, TaN, Ru, Pt or polysilicon.
Afterwards, in step 210, on conductor layer, form the metal nitride sandwich construction, so that form bottom electrode with conductor layer.Wherein, the metal nitride sandwich construction is non-crystal habit and its nitrogen content increases gradually with the number of plies of bottom electrode.Can utilize the vacuum film deposition system to carry out this step, for example be chemical vapor deposition (CVD) or ald (ALD) system.
In addition, when the material of conductor layer and metal nitride sandwich construction is identical, can not increase under the process complexity situation, after finishing conductor layer and plating, then utilize the modulation of technological parameter, form the metal nitride sandwich construction continuously.For instance, when using plasma to assist atomic layer deposition system, its step is to feed TiCl earlier
4Predecessor (precursor), the body of ventilating is again taken away unreacted predecessor, and this step is called " purge ".Then, feeding contains nitrogen and hydrogen (N
2/ H
2) the plasma (plasma) of reacting gas (reactant gas) react, this program is a circulation (cycle), for example is the TiN film of tens dusts to form thickness, to finish the conductor layer of bottom electrode.Afterwards, turn off the predecessor of TiN, re-use the parameter of plating the TiN film in the technology, be similarly the ultrathin membrane of TiN at its surface deposition, and along with the number of plies of ultrathin membrane increases and increases its nitrogen content, to finish the metal nitride sandwich construction of bottom electrode.The thickness of aforementioned ultrathin membrane (is about several dusts～tens dusts) as thin as a wafer.Because the nitrogen (N) in the metal nitride sandwich construction is high more with respect to metal (as Ti or Ta) components in proportions, its crystallinity is poor more, and the thickness of each layer is thinner, and its crystallization is also poorer, so this metal nitride sandwich construction will occur with noncrystalline form.In addition, because subsequent technique might meet with the environment of high-temperature heat treatment, counterdiffusion mutually easily between the conductor layer that can make bottom electrode and the insulating barrier is so above-mentioned metal nitride sandwich construction also can be played the part of the role of diffused barrier layer (diffusion barrier).
Then, in step 220, form insulating barrier on the metal nitride sandwich construction of bottom electrode, wherein the material of insulating barrier is preferably high-k (high-k) material, for example Ta
2O
5, Al
2O
3, Hf
xAl
yO, HfO
2Or TiO
2Because insulating barrier is formed on the metal nitride sandwich construction of above-mentioned noncrystalline form, thus can not influence as the known electrode material that is subjected to lower floor's crystallization, and then can form noncrystalline form, with the loss of reduction leakage current, and obtain higher capacitance.
At last, in step 230, on insulating barrier, form top electrode.
In sum, the present invention's characteristics are before forming insulating barrier, form the metal nitride sandwich construction of noncrystalline form earlier, avoiding the insulating barrier crystallization, and then prevent the loss of leakage current.In addition, except helping forming the high-k insulating layer of noncrystalline form, reduce outside the leakage current of electric capacity, the metal nitride sandwich construction also can improve the crystallization temperature of electric capacity in follow-up hot environment, and improve the interfacial characteristics of bottom electrode and insulating barrier, can effectively improve the stability and the reliability of element.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing a little change and improvement, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (18)
1. a metal-insulator-metal type capacitance structure comprises top electrode, bottom electrode and insulating barrier, and this insulating barrier is characterized in that between this top electrode and this bottom electrode:
This bottom electrode comprises:
Conductor layer; And
The metal nitride sandwich construction, between this conductor layer and this insulating barrier, wherein the nitrogen content of this metal nitride sandwich construction increases to the direction of this insulating barrier gradually, and this metal nitride sandwich construction is non-crystal habit.
2. the metal-insulator-metal type capacitance structure according to claim 1 is characterized in that this conductor layer is identical with the material of this metal nitride sandwich construction.
3. the metal-insulator-metal type capacitance structure according to claim 1 is characterized in that the material of this metal nitride sandwich construction comprises TiN or TaN.
4. the metal-insulator-metal type capacitance structure according to claim 1 is characterized in that this metal nitride sandwich construction is made of multi-layer ultrathin membrane.
5. the metal-insulator-metal type capacitance structure according to claim 4, the thickness of each layer ultrathin membrane that it is characterized in that this metal nitride sandwich construction is between a few dust to tens dusts.
6. the metal-insulator-metal type capacitance structure according to claim 4, the number of plies of above-mentioned these ultrathin membranes that it is characterized in that this metal nitride sandwich construction is more than three layers.
7. the metal-insulator-metal type capacitance structure according to claim 1 is characterized in that the material of this conductor layer comprises TiN, TaN, Ru, Pt or polysilicon.
8. the metal-insulator-metal type capacitance structure according to claim 1 is characterized in that the material of this insulating barrier comprises high dielectric constant material.
9. described according to Claim 8 metal-insulator-metal type capacitance structure is characterized in that the material of this insulating barrier comprises Ta
2O
5, Al
2O
3, Hf
xAl
yO, HfO
2Or TiO
2
10. the manufacture method of a metal-insulator-metal type capacitance structure is characterized in that comprising:
Conductor layer is provided;
Form the metal nitride sandwich construction on this conductor layer, so that form bottom electrode with this conductor layer, wherein this metal nitride sandwich construction is non-crystal habit and its nitrogen content increases gradually with the number of plies of this bottom electrode;
On this metal nitride sandwich construction of this bottom electrode, form insulating barrier; And
On this insulating barrier, form top electrode.
11., it is characterized in that the method that forms this metal nitride sandwich construction on this conductor layer comprises the vacuum film deposition system that utilizes according to the manufacture method of the described metal-insulator-metal type capacitance structure of claim 10.
12., it is characterized in that this vacuum film deposition system comprises chemical vapour deposition (CVD), physical vapour deposition (PVD) or atomic layer deposition system according to the manufacture method of the described metal-insulator-metal type capacitance structure of claim 11.
13., it is characterized in that this conductor layer is identical with the material of this metal nitride sandwich construction according to the manufacture method of the described metal-insulator-metal type capacitance structure of claim 10.
14., it is characterized in that the material of this metal nitride sandwich construction comprises TiN or TaN according to the manufacture method of the described metal-insulator-metal type capacitance structure of claim 10.
15., it is characterized in that this metal nitride sandwich construction is made of multi-layer ultrathin membrane according to the manufacture method of the described metal-insulator-metal type capacitance structure of claim 10.
16., it is characterized in that the material of this conductor layer comprises TiN, TaN, Ru, Pt or polysilicon according to the manufacture method of the described metal-insulator-metal type capacitance structure of claim 10.
17., it is characterized in that the material of this insulating barrier comprises high dielectric constant material according to the manufacture method of the described metal-insulator-metal type capacitance structure of claim 10.
18., it is characterized in that the material of this insulating barrier comprises Ta according to the manufacture method of the described metal-insulator-metal type capacitance structure of claim 17
2O
5, Al
2O
3, Hf
xAl
yO, HfO
2Or TiO
2
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101374525A CN100565881C (en) | 2005-12-30 | 2005-12-30 | Metal-insulator-metal type capacitance structure and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101374525A CN100565881C (en) | 2005-12-30 | 2005-12-30 | Metal-insulator-metal type capacitance structure and manufacture method thereof |
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|---|---|
| CN1992277A true CN1992277A (en) | 2007-07-04 |
| CN100565881C CN100565881C (en) | 2009-12-02 |
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102760775A (en) * | 2011-04-25 | 2012-10-31 | 南亚科技股份有限公司 | Capacitor and manufacturing method thereof |
| CN103377875A (en) * | 2012-04-23 | 2013-10-30 | 南亚科技股份有限公司 | Method for manufacturing capacitor |
| CN113206197A (en) * | 2021-04-29 | 2021-08-03 | 福建省晋华集成电路有限公司 | Capacitor structure, semiconductor device and capacitor structure preparation method |
-
2005
- 2005-12-30 CN CNB2005101374525A patent/CN100565881C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102760775A (en) * | 2011-04-25 | 2012-10-31 | 南亚科技股份有限公司 | Capacitor and manufacturing method thereof |
| CN103377875A (en) * | 2012-04-23 | 2013-10-30 | 南亚科技股份有限公司 | Method for manufacturing capacitor |
| CN113206197A (en) * | 2021-04-29 | 2021-08-03 | 福建省晋华集成电路有限公司 | Capacitor structure, semiconductor device and capacitor structure preparation method |
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| Publication number | Publication date |
|---|---|
| CN100565881C (en) | 2009-12-02 |
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