CN1992264A - Organic electro-luminescence display device and method of manfacturing the same - Google Patents
Organic electro-luminescence display device and method of manfacturing the same Download PDFInfo
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- CN1992264A CN1992264A CNA2006101622483A CN200610162248A CN1992264A CN 1992264 A CN1992264 A CN 1992264A CN A2006101622483 A CNA2006101622483 A CN A2006101622483A CN 200610162248 A CN200610162248 A CN 200610162248A CN 1992264 A CN1992264 A CN 1992264A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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Abstract
Provided is an organic electro-luminescence display device. Because TFTs and organic light-emitting diode devices are formed on two different substrates, respectively, and the two substrates are attached to each other, so that productivity improves and manufacturing costs can be reduced. Also, because a pad portion exposed to the outside is formed using a conductive layer having corrosion resistance, corrosion of the pad portion is prevented, and thus an organic electro-luminescence display device having improved reliability can be provided.
Description
Technical field
The present invention relates to a kind of organic elctroluminescent device, relate in particular to a kind of double panel type organic electroluminescent display device and manufacture method thereof that can realize reliability.
Background technology
Organic elctroluminescent device uses the following phenomenon in semiconductor inside to produce light, and promptly charge carrier as electronics and hole, produces electron-hole pair or charge carrier and is excited to the ground state that upper state drops to stable state then.
Because organic elctroluminescent device is a self-luminous display spare, thereby it does not need as the back light unit in liquid crystal display (LCD) device, so it can be fabricated to light weight and thin profile.In addition, organic elctroluminescent device has the advantage of low voltage drive, high-luminous-efficiency, wide visual angle and fast response time, and it is favourable realizing that high-quality moves aspect the image.
Especially, unlike LCD device or plasma display (PDP), deposition and sealed in unit have occupied the major part of organic elctroluminescent device manufacturing process, and manufacturing process is very simple.
In addition, drive in the situation of organic elctroluminescent device at the active matrix that uses thin-film transistor (TFT) wherein as switching device, even when applying lower electric current, also can obtain identical brightness, thereby can realize low power consumption, high definition and large scale.
Fig. 1 is the schematic cross section according to the organic elctroluminescent device of prior art.With reference to Fig. 1, on substrate 10, be formed with TFT Tr.TFT comprises grid 15, active layer 25 and source/drain 27a and 27b.
Substrate 10 comprises the passivation layer 20 with the contact hole that exposes part drain electrode 27b.
Be formed with first electrode 30 on passivation layer 20, it is electrically connected with drain electrode 27b by contact hole.
Passivation layer 20 is provided with the insulating barrier 40 that wherein limits pixel region.Part first electrode 30 corresponding to pixel region is provided with machine luminescent layer 50.On organic luminous layer 50, be provided as second electrode 60 of public electrode.
Here, first and second electrodes 30 and 60 apply forward current on organic luminous layer 50, thereby make organic luminous layer 50 luminous.
Afterwards; in order to protect the organic light emitting diode device E that is formed on the substrate 10 to avoid outside moisture and oxygen; after applying sealant 70 on the external margin of substrate 10, adhesive surface is to the base plate for packaging 80 of organic light emitting diode device E, thereby prepared organic elctroluminescent device.According to the transmit direction of image, organic elctroluminescent device is divided into bottom emissive type organic elctroluminescent device and top emission structure organic elctroluminescent device.
The bottom emissive type organic elctroluminescent device has following shortcoming, promptly owing to the restriction of aperture ratio, is difficult to this display device is used for high-resolution product.
On the other hand, because design TFT ratio is easier to and has improved the aperture ratio, so the top emission structure organic elctroluminescent device has advantage aspect life of product.
Yet, because in the top emission structure organic elctroluminescent device according to prior art, negative electrode generally is positioned on the organic luminous layer, so be difficult to select electrode material.Therefore, limited transmissivity and reduced optical efficiency.
In addition, in top emission structure organic elctroluminescent device, be used for being exposed to the outside from the welding disk of outside received signal according to prior art.Welding disk is formed by metal and is easy to by external oxygen and moisture attack.
The erosion of welding disk has increased the contact resistance between the contacting metal of the metal of welding disk and external circuit unit, thereby has produced dark pixel.In addition, the erosion of welding disk has reduced the reliability of organic elctroluminescent device.
Summary of the invention
Therefore, the present invention relates to a kind of organic elctroluminescent device and manufacture method thereof, it can overcome the restriction of useful prior art and shortcoming and one or more problems of causing substantially.
An object of the present invention is to provide a kind of organic elctroluminescent device, by formation TFT like this and organic light emitting diode device, the formation that is them can not influence other elements, and it can improve product and error rate treatment effeciency and improve optical efficiency and reliability.
Another object of the present invention provides a kind of method of making organic elctroluminescent device.
Other feature and advantage of the present invention will be listed in the following description, and wherein a part becomes apparent from following examination, perhaps is appreciated that by practice of the present invention.Can realize and obtain purpose of the present invention and other advantage by the structure that in writing specification and claim and accompanying drawing, particularly points out.
In order to realize these purposes and other advantage and,, to provide a kind of organic elctroluminescent device here, comprising: first substrate that is limited with first area and second area as specializing with broadly described according to purpose of the present invention; Be formed on corresponding a part of first substrate in first area on grid line and extend and be formed on grid pad on the second area from grid line; Extend to the data pads in first and second zones of first substrate; Be formed on the gate insulation layer on grid line, grid pad and the data pads; Be arranged on the gate insulation layer with the grid line data line crossing and be positioned at the data pads connecting portion of data wire end; Be formed at least one thin-film transistor on grid line and the data wire crosspoint; Passivation layer, it comprises the contact hole that exposes a part of thin-film transistor, data pads, grid pad and data pads connecting portion; Be used for line that data pads is electrically connected with the data pads connecting portion on the passivation layer with being arranged on.
In another aspect of this invention, provide a kind of method of making organic elctroluminescent device, this method comprises: first substrate is set; Continuous stacked first conductive layer and second conductive layer on first substrate, and with the first and second conductive layer compositions, thereby grid, grid line, grid pad and data pads formed; On grid, grid line, grid pad and data pads, form gate insulation layer; On a part of gate insulation layer, form active layer, source/drain, data wire and data pads connecting portion corresponding to grid; On the gate insulation layer that comprises active layer, source/drain, data wire and data pads connecting portion, form passivation layer; On passivation layer, form the contact hole that exposes part drain electrode, grid pad connecting portion, grid pad and data pads; With the line that is formed for data pads is connected with the data pads connecting portion.
In another aspect of this invention, provide a kind of organic elctroluminescent device, having comprised: first substrate; Be positioned at the grid line on first substrate and be formed on the grid pad connecting portion of grid line end; Be formed on the gate insulation layer on first substrate that comprises grid line and grid pad connecting portion; The data wire that on gate insulation layer, forms, the data pads that is positioned at the data wire end and the grid pad of separating with data wire by stacked at least first conductive pattern and second conductive pattern; Be formed on data wire, data pads and the grid pad and comprise the passivation layer of the contact hole that exposes a part of grid pad connecting portion, data pads and grid pad; Be used for line that grid pad connecting portion is electrically connected with the grid pad on the passivation layer with being positioned at, wherein first conductive pattern is formed by the electric conducting material with corrosion resistance.
In another aspect of this invention, provide a kind of method of making organic elctroluminescent device, this method comprises: first substrate is set; On first substrate, form after the conductive layer,, thereby form grid, grid line and grid pad connecting portion the conductive layer composition; On grid, grid line and grid pad connecting portion, form gate insulation layer; On a part of gate insulation layer, form active layer corresponding to grid; On comprising the gate insulation layer of active layer, form after first conductive layer and second conductive layer continuously, with the first and second conductive layer compositions, be arranged in the source/drain of active layer respective regions and be positioned at data wire, grid pad and data pads on the gate insulation layer thereby form simultaneously; On active layer, source/drain, data wire, grid pad and data pads, form passivation layer; In passivation layer, form the contact hole that exposes part drain electrode, grid pad connecting portion, grid pad and data pads; On passivation layer, be formed for line that the grid pad is connected with grid pad connecting portion.
The generality that should be appreciated that front of the present invention describe and following detailed all be typicalness with indicative, be intended to provide the present invention described in claim further to explain.
Description of drawings
Illustrate embodiments of the present invention and be used from explanation principle of the present invention to the accompanying drawing that the invention provides a further understanding and a composition specification part with specification one.In the accompanying drawings:
Fig. 1 is the schematic cross section according to the organic elctroluminescent device of prior art;
Fig. 2 is the schematic plan view according to the organic elctroluminescent device of first embodiment of the invention;
Fig. 3 is the cross-sectional view of an organic elctroluminescent device part among diagram Fig. 2;
Fig. 4 A is to explain the cross-sectional view of making the method for organic elctroluminescent device according to second embodiment of the invention to 4F;
Fig. 5 A is to explain the cross-sectional view of making the method for organic elctroluminescent device according to third embodiment of the invention to 5D;
Fig. 6 is the cross-sectional view of organic elctroluminescent device another part among diagram Fig. 2;
Fig. 7 A is to explain the cross-sectional view of making the method for organic elctroluminescent device according to four embodiment of the invention to 7G;
Fig. 8 A is to explain the cross-sectional view of making the method for organic elctroluminescent device according to fifth embodiment of the invention to 8D.
Embodiment
Describe in detail now with reference to preferred implementation of the present invention, illustrate embodiment in the accompanying drawing.Provide execution mode as embodiment below, fully to transmit spirit of the present invention to those skilled in the art.Therefore, the execution mode that the present invention is not limited to list here, but can realize with other forms and modification.In the accompanying drawings, size of devices and thickness have for the sake of clarity been amplified.No matter when, reference marker identical in whole accompanying drawing all refers to same or analogous parts.
First execution mode
Fig. 2 is the schematic plan view according to the organic elctroluminescent device of first embodiment of the invention.
With reference to Fig. 2, use seal pattern 300 bonding first substrate 100 and second substrates 200.
The outer peripheral areas 100b that first substrate 100 is limited with active region 100a and is provided with along active region 100a edge.Active region 100a comprises many grid lines 112 intersected with each other and data wire 122.In addition, active region 100a further comprises the power line 132 that is parallel to grid line 112 settings.
In the part of surrounding, be formed with pixel region P by grid line 112 and data wire 122.In pixel region P, be provided with thin-film transistor (TFT).For example, in pixel region P, be provided with switching TFT S-Tr, drive TFT D-Tr and capacitor Cp.Switching TFT S-Tr is electrically connected with grid line 112 and data wire 122.Drive TFT D-Tr is electrically connected with switching TFT S-Tr and capacitor Cp.In addition, the source electrode of drive TFT D-Tr is electrically connected with power line 132.
In addition, in active region 100a, be provided with data pads connecting portion 123 and line 124.Data pads connecting portion 123 is formed on the end of data wire 122, and line 124 is connected with data pads connecting portion 123.
In addition, data pads 120 extends to active region 100a and outer peripheral areas 100b and is electrically connected with line 124.
In outer peripheral areas 100b, be provided with grid pad 110 and ground pad 130.Grid pad 110 is formed on the end of grid line 112, and ground pad 130 is formed on the end of power line 132.
In addition, in outer peripheral areas 100b, be provided with common electric voltage pad 140.Common electric voltage pad 140 receives common electric voltage from the external circuit parts.Common electric voltage pad 140 is electrically connected with organic light emitting diode device E on being formed on second substrate 200.
Welding disk and external circuit parts corresponding to outer peripheral areas 100b is provided with are connected with flexible print circuit (FPC) as carrier band encapsulation (TCP), thereby receive external signal.
Simultaneously, on second substrate, 200 inboards, form organic light emitting diode device E, and it is connected with TFT on being formed on first substrate 100.
The driving of the organic elctroluminescent device with said structure is described below.
The external circuit parts apply for grid pad 110 and data pads 120 respectively and select signal and data-signal.When the grid of selecting signal by the grid line actuating switch TFT S-Tr that is connected with grid pad 110, data-signal just passes through switching TFT S-Tr via the data wire 122 that is connected with data pads 120, and imposes on drive TFT D-Tr and capacitor Cp.
The grid of data-signal conducting drive TFT D-Tr, thus organic light emitting diode device E supplying electric current given by drive TFT D-Tr.When electric current flows through organic light emitting diode device E, supply with hole and electronics from anode and negative electrode to organic luminous layer respectively.Afterwards, electronics in the organic luminous layer and hole-recombination, thereby produce power and display image.
In this, can come the overdrive electric current of TFT D-Tr of control flows by conduction and cut-off state in response to data-signal controlling and driving TFT D-Tr, thus display gray scale.
In addition, when not applying the selection signal, the data-signal that fills in capacitor Cp imposes on drive TFT D-Tr, thereby it is luminous that organic light emitting diode device E is continued, until apply the signal of next image.
Fig. 3 is the cross-sectional view of an organic elctroluminescent device part among diagram Fig. 2.Fig. 3 only illustrates a drive TFT, but organic elctroluminescent device further comprises capacitor and switching TFT.In addition, the welding disk that Fig. 3 illustrates to the organic elctroluminescent device setting only comprises data pads and grid pad, but welding disk further comprises common electric voltage pad and ground pad, has omitted them for convenience.
With reference to Fig. 3, organic elctroluminescent device comprises first substrate 100 and second substrate 200.First and second substrates 100 and 200 use seal pattern 300 bonded to one another.Here, first substrate 100 is divided into active region 100a and outer peripheral areas 100b.Seal pattern is along the layout setting between active region 100a and the outer peripheral areas 100b.Therefore, use first and second substrates 100 and 200 and seal pattern 300 with the sealing of active region 100a and external environment condition.Outer peripheral areas 100b is exposed to external environment condition.
In this, in the active region 100a of first substrate 100, many grid lines and data wire are arranged with cells arranged in matrix.In the pixel region that limits by grid line and data wire, be formed with TFT.In addition, in the outer peripheral areas 100b of first substrate 100, be formed with the external circuit portion that is used to apply signal, as be used for the welding disk that is connected with FPC with TCP.Here, welding disk comprise grid pad 110, data pads 120, pad (not shown) and common electric voltage pad (not shown).
The data pads 120 that is used for receiving data-signal is formed on active region 100a and outer peripheral areas 100b.The a part of data pads 120 that is arranged in active region 100a is electrically connected with the data pads connecting portion 123 that is formed on the data wire end.On the other hand, a part of data pads 120 that is arranged in outer peripheral areas 100b is connected with the external circuit parts.
Simultaneously, second substrate 200 comprises organic light emitting diode device E, and it has first electrode 210, organic luminous layer 220 and second electrode 230.The organic light emitting diode device E that is formed on second substrate 200 faces first substrate 100.
To first substrate 100 that be formed with TFT Tr and welding disk be described in more detail.
The outer peripheral areas 100b that first substrate 100 is limited with active region 100a and is provided with along active region 100a edge.In the active region 100a of first substrate 100, be provided with the grid line (not shown), from the grid 111 of grid line part branch be parallel to the power line (not shown) of grid line.
Be provided with a part of data pads 120 in the neutralize both sides of first substrate, 100 outer peripheral areas of active region 100a.
Grid pad 110 is arranged among the outer peripheral areas 100b of first substrate 100.Grid pad 110 extends and is arranged on the end of grid line from grid line.
Grid pad 110 and data pads 120 comprise the first conductive pattern 150a and the second conductive pattern 150b.Because the first conductive pattern 150a comprises the electric conducting material with corrosion resistance, so the first conductive pattern 150a has stoped grid pad 110 and data pads 120 to be corroded by outside moisture and oxygen.In this, the first conductive pattern 150a comprises tin indium oxide (ITO) pattern or indium zinc oxide (IZO) pattern.
The second conductive pattern 150b comprises the electric conducting material with resistance lower than the first conductive pattern 150a.The second conductive pattern 150b has reduced the resistance of the first conductive pattern 150a.In this, the second conductive pattern 150b is formed by Cr or Mo.
In addition, grid line and grid 111 also comprise the first conductive pattern 150a and the second conductive pattern 150b.
On the whole surface of first substrate 100, be formed with gate insulation layer 101, thus cover gate 111, grid pad 110 and data pads 120.
On corresponding to a part of gate insulation layer 101 of active region 100a, form active patterns 113.Active patterns 113 comprises channel pattern 153a that is formed by amorphous silicon pattern 153a and the ohmic contact layer 153b that is formed by the amorphous silicon pattern with doping impurity.On active patterns 113, form source/drain 121a and 121b.Be electrically connected with source electrode 121a with grid line data line crossing (not shown).In addition, the data pads connecting portion 123 that is formed on the data wire end is arranged on a part of gate insulation layer 101 corresponding to active region 100a.
Data pads connecting portion 123 is by forming with source/drain 121a and 121b identical materials.Channel pattern 153a and ohmic contact layer 153b are arranged on data pads connecting portion 123 belows.
On first substrate 100, be formed with passivation layer 102, thereby cover TFT and data pads connecting portion 123.
Passivation layer 102 comprises the contact hole that exposes drain electrode 121b, data pads connecting portion 123, grid pad 110 and data pads 120 respectively.
In this, contact hole comprises the first contact hole P1 and the second contact hole P2 that expose corresponding to a part of data pads 120 of outer peripheral areas 100b of exposure corresponding to a part of data pads 120 of active region 100a.
Line 124 is formed on the passivation layer 102, thereby will be connected to data pads connecting portion 123 by a part of data pads 120 that the first contact hole P1 exposes.The example that is used to form line 124 comprises Pt, Au, Ir, Cr, Mg, Ag, Ni, Al and AlNd.In addition, a part of data pads that is exposed by the second contact hole P2 contacts with the external circuit parts, thereby receives data-signal from the external circuit parts.
In addition, passivation layer 102 is provided with connection electrode 125.Connection electrode 125 is connected to the drain electrode 121b by contact holes exposing.Connection electrode 125 prevents to damage drain electrode 121b in the operation process that forms contact hole.Connection electrode 125 comprises the electric conducting material identical with line 124.
Different with accompanying drawing, grid pad 110 and data pads 120 can comprise the second conductive pattern 150b and the first conductive pattern 150a.In this, the first conductive pattern 150a comprises the opening that is formed by the first and second contact hole P1 and the P2 exposed portions second conductive pattern 150b by etching.
Use this structure, the first conductive pattern 150a that forms grid pad 110 or data pads 120 that is formed by the electric conducting material with corrosion resistance is exposed to the outside, thereby can stop the grid pad 110 that moisture and oxygen by the outside causes or the erosion of data pads 120.
In this, unshowned ground pad is also formed by the electric conducting material identical with the grid pad with the common electric voltage pad in the accompanying drawings.
Therefore, can stop the defect pixel of the organic elctroluminescent device that causes owing to the erosion that is exposed to outside welding disk and the reduction of reliability.
Below detailed description is provided with second substrate 200 of organic light emitting diode device E.
In the face of second substrate, 200 surfaces of first substrate 100 are provided with first electrode 210 as public electrode.In addition, between second substrate 200 and first electrode 210, also be provided with auxiliary electrode 205.Auxiliary electrode 205 has further reduced the resistance of first electrode 210.In this, because auxiliary electrode 205 is by having that low-resistance metal forms and almost be opaque, so auxiliary electrode 205 can be formed on the part of display image not.
Below first electrode 210, be provided with the resilient coating 215 that limits pixel region.Below resilient coating 215, be provided with spacer 225 and with the wadding 235 of spacer 225 spaced apart preset distances.
The organic luminous layer 220 and second electrode 230 are set below first electrode 210 continuously.
Organic luminous layer 220 comprises that hole injection layer, hole transmission layer, hole suppress layer, electron transfer layer and electron injecting layer.Hole injection layer, hole transmission layer, hole suppress layer, electron transfer layer and electron injecting layer and inject electronics and hole more apace, thereby have further improved luminous efficiency.
In addition, for each pixel region, second electrode 230 separates by spacer 225.In order to separate second electrode 230 for each pixel region, spacer 225 has the shape of back taper partition wall.Different therewith, the spacer that separates second electrode 230 for each pixel region can promptly form organic layer and this resilient coating 215 of etching, thereby form undercutting (undercut) in resilient coating 215 by following formation on resilient coating 215.
In addition, because second electrode 230 has covered the upper surface of wadding 235, so a part of second electrode 230 uses wadding 235 to be electrically connected with the TFT of first substrate 100.
In addition, below second electrode 230, the moisture absorption layer is set further.The moisture absorption layer is designed to stop organic luminous layer 220 to be damaged by moisture and/or oxygen.
Operation above using forms TFT, and form organic light emitting diode device on the inboard of second substrate 200 on the inboard of first substrate 100.In this, TFT and organic light emitting diode device E are electrically connected to each other by second electrode 230 that is formed on the wadding 235.Therefore, when drive TFT, organic light emitting diode device E launches light.Light is delivered to second substrate 200, thereby provides image for the user.
Second execution mode
Fig. 4 A is to explain the cross-sectional view of making the method for organic elctroluminescent device according to second embodiment of the invention to 4F;
With reference to Fig. 4 A, on first substrate 400 of glass substrate or plastic base, form first conductive layer and second conductive layer continuously.With the first and second conductive layer compositions, thus form simultaneously comprise grid line (not shown) with the first linear conductive pattern 450a and second conductive pattern 450b, from the grid 405 of grid line branch be positioned at the grid pad 410 of grid line end.In addition, the data pads 420 of formation simultaneously and grid line predetermined distance apart on first substrate 100.
Here, the first conductive pattern 450a is formed by the electric conducting material with corrosion resistance, and it can comprise ITO or IZO.In addition, chemical reaction does not take place with the first conductive pattern 450a in the second conductive pattern 450b, and it is formed by the low resistance conductive material with resistance littler than the first conductive pattern 450a by deposition Cr or Mo.
Afterwards, on the whole surface of first substrate 400 that comprises grid 405, grid pad 410 and data pads 420, form gate insulation layer 401.Gate insulation layer 401 can be for using the lamination of silicon oxide layer, silicon nitride layer or these layers that chemical vapor deposition (CVD) forms.
With reference to Fig. 4 B, to be positioned on the gate insulation layer 401 amorphous si-layer and with the amorphous si-layer and the conductive layer composition of p-type or n-type doping impurity, thereby form active patterns 413 corresponding to gate electrode 405, wherein in active patterns 413, be laminated with channel pattern 453a and ohmic contact layer 453b.Simultaneously, form and grid line data line crossing (not shown), the data pads connecting portion 423 that is positioned at the data wire end and source/ drain 421a and 421b.
Here, because active patterns 413 uses a mask to form simultaneously with the source/drain 421a and the 421b that are arranged on the active patterns 413, so channel pattern 453a and ohmic contact layer 453b can further be set below data wire and pad connecting portion 423.
Operation above using has formed the TFT that comprises grid 405, active patterns 413 and source/ drain 421a and 421b on first substrate 400; Comprise the first conductive pattern 450a and be used to reduce the grid pad 410 of the second conductive pattern 450b of the first conductive pattern 450a resistance with corrosion resistance; With data pads 420.
With reference to Fig. 4 C, on the gate insulation layer 401 that comprises TFT, grid pad 410 and data pads 420, form passivation layer 402.Passivation layer 402 is organic layer or inorganic layer.For example, organic layer is to be selected from a kind of in the group that is made of following material: acrylic resin, benzocyclobutene (BCB), polyimides (PI) and novolaks resinoid.In addition, inorganic layer is the lamination of silicon oxide layer, silicon nitride layer or these layers.
In passivation layer 402, form the contact hole that exposes drain electrode 421b, data pads connecting portion 423, grid pad 410 and data pads 420 respectively.
In this, contact hole comprises the first contact hole P1 and the second contact hole P2 that exposes data pads 420 two ends respectively.
With reference to Fig. 4 D,, thereby be formed for data pads connecting portion 423 is electrically connected to the line 424 of data pads 420 with the conductive layer composition that is deposited on the passivation layer that comprises contact hole.Therefore, the data-signal that applies via data pads 420 is delivered to data pads connecting portion 423 and imposes on TFT by data wire by line 424.
Operation above using can form the grid pad 410 and the data pads 420 that comprise the first conductive pattern 450a and be exposed to the outside simultaneously.
Can further form the connection electrode 425 that is electrically connected to exposed drain 421b by contact hole simultaneously.Connection electrode 425 is designed for and stops drain electrode 421b to be damaged in the operation process that forms contact hole.
Simultaneously, with reference to Fig. 4 E, provide second substrate 500 that is formed with organic light emitting diode device E on it.
To be described in detail in the operation that forms organic light emitting diode device E on second substrate 500 below.
On second substrate 500, form first electrode 510 as public electrode.
First electrode is formed as ITO and IZO by the electric conducting material with the transparency and high work content.
On first electrode 510, form the resilient coating 515 that limits each pixel region.Resilient coating 515 is insulating barriers.On resilient coating 515, form spacer 525.Here, form spacer 525 with back taper partition wall shape.In this, spacer 525 is formed by organic insulator.In addition, the wadding 535 of formation and spacer 525 spaced apart preset distances on resilient coating 515.
Comprising the continuous organic luminous layer 520 and second electrode 530 of forming on first electrode, the 510 whole surfaces of wadding 535.In this, second electrode 530 optionally is formed in the pixel region 525 by spacer 525.In addition, because second electrode 530 has covered the top of wadding 535, so outstanding to first substrate 100 corresponding to a part second electrode 530 of wadding 535.
In this, before forming organic luminous layer 520, further form hole injection layer and/or hole transmission layer.In addition, can form further after forming organic luminous layer 520 that the hole suppresses layer, in electron transfer layer and the electron injecting layer at least one.
Here, on second electrode 530, further form moisture absorption layer (not shown).The moisture absorption layer comprises BaO or CaO.Therefore, because moisture absorption layer protection organic light emitting diode device E avoids penetrating into the moisture and the oxygen of device, so can stop reducing of whole device lifetime.
With reference to Fig. 4 F, at first substrate that comprises TFT or comprise form seal pattern 600 on second substrate 500 of organic light emitting diode device E after, carry out two packaging process that substrate is bonded to one another, thus the preparation organic elctroluminescent device.Seal pattern 600 forms leap and exposes the first contact hole P1 at data pads 420 two ends and the part between the second contact hole P2 respectively.In addition, so form seal pattern 600, promptly data pads connecting portion 424 is positioned at seal pattern 600.Therefore, data pads connecting portion 424 is not exposed to the outside.
In this, the drain electrode 421b of first substrate 400 contacts with a part second electrode of giving prominence to by the wadding 535 of second substrate 500 530.
In addition, in order to remove moisture and oxygen, filling inert gas, as nitrogen by first and second substrates 400 and 500 inside that form.By doing like this, can stop the life-span that is formed on the organic luminous layer 520 on second substrate 500 to reduce or stop because the stain that moisture and oxygen produce.
The 3rd execution mode
Fig. 5 A is to explain the cross-sectional view of making the method for organic elctroluminescent device according to third embodiment of the invention to 5D.Here, because except forming the data pads by the sedimentary sequence that changes first conductive pattern and second conductive pattern, identical according to the method for the manufacturing organic elctroluminescent device of third embodiment of the invention with method according to the manufacturing organic elctroluminescent device of second embodiment of the invention, so will omit the description of same section.Identical reference marker is represented components identical.
With reference to Fig. 5 A, continuous stacked second conductive layer and first conductive layer on first substrate 400.With the first and second stacked conductive layer compositions, thus form comprise grid line (not shown) with the first linear conductive pattern 450a and second conductive pattern 450b, from the grid 405 of grid line branch be positioned at the grid pad 410 of grid line end.In addition, on first substrate 100, form data pads 420 simultaneously.
Here, the first conductive pattern 450a is formed by the electric conducting material with corrosion resistance, and it can comprise ITO layer or IZO layer.In addition, chemical reaction does not take place with the first conductive pattern 450a in the second conductive pattern 450b, and it is formed by the low resistance conductive material with resistance littler than the first conductive pattern 450a by deposition Cr or Mo.
Afterwards, on the whole surface of first substrate 400 that comprises gate electrode 405, grid pad 410 and data pads 420, form gate insulation layer 401.
After formation on the gate insulation layer 401 wherein is laminated with active patterns 413, source/ drain 421a and 421b, the data wire (not shown) of channel pattern 453a and ohmic contact layer 453b and is positioned at the data pads connecting portion 423 of data wire end, form passivation layer 402.
With reference to Fig. 5 B, in passivation layer 402, form the contact hole that exposes drain electrode 421b, data pads connecting portion 423, gate pads 410 and data pads 420 respectively.Contact hole comprises the first contact hole P1 and the second contact hole P2 that exposes data pads 420 two ends respectively.
Etching is exposed portions grid pad 410 and data pads 420 and as the part second conductive pattern 450b on data pads connecting portion 423 upper stratas by being formed on contact hole in the passivation layer 402, thereby forms the opening that exposes the first conductive pattern 450a.That is to say that the first conductive pattern 450a with corrosion resistance is exposed to the outside, thereby contacts with external circuit.
With reference to Fig. 5 C, deposits conductive material on the passivation layer 402 that comprises contact hole.With the electric conducting material composition of deposition, thereby be formed for data pads connecting portion 423 is electrically connected to the line 424 of data pads 420.In addition, because drain electrode 421b loses in the operation process that forms contact hole, so can further be formed for compensating the connection electrode 425 of this loss.
With reference to Fig. 5 D, at first substrate 400 that comprises TFT or comprise form seal pattern 600 on second substrate 500 of organic light emitting diode device E after, carry out two packaging process that substrate is bonded to one another, thereby prepared organic elctroluminescent device.
The 4th execution mode
Fig. 6 is the cross-sectional view of organic elctroluminescent device another part among diagram Fig. 2.Fig. 3 only illustrates a drive TFT, but can further form capacitor and switching TFT.In addition, be illustrated as to the pad of organic elctroluminescent device setting and be limited to data pads and grid pad, but can further form common electric voltage pad and ground pad.Common electric voltage pad and ground pad have been omitted for convenience.
With reference to Fig. 6, first substrate 1100 of organic elctroluminescent device and second substrate 1200 use seal pattern 1300 bonded to one another.Here, first substrate 1100 includes source region 1100a and is arranged on active region 1100a outer peripheral areas 1100b on every side.Seal pattern 1300 is arranged at the interface between active region 1100a and the outer peripheral areas 1100b.Therefore, active region 1100a and external environment condition sealing, outer peripheral areas 1100b is exposed to external environment condition.
In this, many grid lines and data wire intersect in first substrate, 1100 active region 1100a.In the pixel region of determining by grid line and data wire, be formed with TFT.In addition, in the outer peripheral areas 1100b of first substrate 100, be formed with the external circuit portion that is used to apply signal, as be used for the welding disk that is connected with FPC with TCP.Here, welding disk comprise grid pad 1110, data pads 1120, pad (not shown) and common electric voltage pad (not shown).
Be used to receive and select the grid pad 1110 of signal above active region 1100a and outer peripheral areas 1100b, to extend.The a part of grid pad 1100 that is arranged in active region 1100a is connected with the grid pad connecting portion 1153 that is formed on the grid line end.The a part of grid pad 1100 that is arranged in outer peripheral areas 1100b is connected with the external circuit parts.
Simultaneously, form organic light emitting diode device E below second substrate 1200, it has first electrode 1210, organic luminous layer 1220 and second electrode 1230.
To first substrate 1100 that be formed with TFT and welding disk be described in more detail.
In addition, in active region 1100a, further be formed with the spaced apart preset distance of grid line and with the power line (not shown) of the parallel formation of grid line.
Be formed with gate insulation layer 1101 comprising on first substrate, the 1100 whole surfaces of grid 1102, grid line and gate pads connecting portion 1153.
A part of gate insulation layer 1101 corresponding to grid 1102 is provided with active patterns 1113.Active patterns 1113 forms by the stacked channel pattern 1112a that is formed by amorphous si-layer continuously with by the ohmic contact layer 1112b that the amorphous si-layer of usefulness doping impurity forms.
On active patterns 1112, be formed with source/drain 1121a and 1121b.On source electrode 1121a, be provided with and grid line data line crossing (not shown).Grid pad 1110 extends on corresponding to a part of gate insulation layer 1101 of active region 1100a and outer peripheral areas 1100b.In addition, the data pads connecting portion 1120 that is formed on the data wire end is arranged on a part of gate insulation layer corresponding to outer peripheral areas 1100a.
Here, grid pad 1110 and data pads 1120 have double-decker, wherein are laminated with the first conductive pattern L1 and the second conductive pattern L2 continuously.
The first conductive pattern L1 is formed by the electric conducting material with corrosion resistance.Therefore, even when grid pad 1110 and data pads 1120 are exposed to the outside, the also erosion that can stop generation to be caused by outside moisture and oxygen is because the first conductive pattern L1 is formed by the electric conducting material with corrosion resistance.In this, the first conductive pattern L1 is formed by ITO or IZO.
The second conductive pattern L2 is formed by the low resistance conductive material with resistance littler than the first conductive pattern L1.The second conductive pattern L2 has reduced the resistance of the first conductive pattern L1.In this, consider and the reaction of the first conductive pattern L1 that the second conductive pattern L2 is formed by Cr or Mo.
In addition, can be by the stacked first conductive pattern L1 and the second conductive pattern L2 form data wire and source/ drain 1121a and 1121b continuously.
Be formed with passivation layer 1102 comprising on first substrate, the 1100 whole surfaces of TFT, grid pad connecting portion 1153, grid pad 1110 and data pads 1120.
On passivation layer 1102, be provided with line 1124, thereby a part of grid pad 1110 that the first contact hole P1 is exposed is connected to grid pad connecting portion 1153.Line 1124 can be by being selected from a kind of in the group that following material forms: Pt, Au, Ir, Cr, Mg, Ag, Ni, Al and AlNd.In addition, a part of grid pad 1110 that exposes by the second contact hole P2 contacts with the external circuit parts.
In addition, be formed with connection electrode 1125 on passivation layer 1102, it is connected to the part drain electrode 1121b of contact holes exposing.Connection electrode 1125 is formed for compensating the loss of drain electrode 1121b in forming contact hole operation process.
Here, for operation is easy, connection electrode 1125 is formed by the electric conducting material identical with line 1124.
With different in the accompanying drawing, grid pad 1110 and data pads 1120 can double-deckly form, and wherein are laminated with the second conductive pattern L2 and the first conductive pattern L1 continuously.In this, by forming opening at a part second conductive pattern L2 that is arranged in by the first and second contact hole P1 and P2 exposed portions, the first conductive pattern L1 is exposed to the outside.In other words, the second conductive pattern L2 of grid pad 1110 and data pads 1120 is formed in etching, to expose the first conductive pattern L1.
Therefore, because the first conductive pattern L1 that is formed by the electric conducting material with corrosion resistance is exposed to the outside, be not easy to be corroded by outside moisture and oxygen so be exposed to a part of grid pad 1110 or the data pads 1120 of outside.
In other words, because first conductive pattern is exposed to the outside in being exposed to outside welding disk, so can stop because the defect pixel of the organic elctroluminescent device that the erosion of welding disk causes and the reduction of reliability.
Simultaneously, below detailed description is provided with second substrate 1200 of organic light emitting diode device E.
Below second substrate 1200, be provided with first electrode 1210 as public electrode.Here, between second substrate 1200 and first electrode 1210, also be provided with auxiliary electrode 1205.Auxiliary electrode 1205 has further reduced the resistance of first electrode 1210.In this, because auxiliary electrode 1205 is by having that low-resistance metal forms and almost be opaque, so auxiliary electrode 1205 can be formed on the part of display image not.
Below first electrode 1210, be provided with the resilient coating 1215 that limits pixel region.Below resilient coating 1215, be provided with spacer 1225 and with the wadding 1235 of spacer 1225 spaced apart preset distances.
The organic luminous layer 1220 and second electrode 1230 are set below first electrode 1210 continuously.
Organic luminous layer 1220 on organic luminous layer 1220 or below comprise that hole injection layer, hole transmission layer, hole suppress layer, electron transfer layer and electron injecting layer.Because can suitably adjust energy level,, thereby further improve luminous efficiency so electronics and hole can be injected into organic luminous layer 1220 more apace at the intersection of first electrode 1210, organic luminous layer 1220 and second electrode 1230.
In addition, for each pixel region, second electrode 1230 separates by spacer 1225.In order to separate second electrode 1230 for each pixel region, spacer 1225 has back taper dividing wall shape.Different therewith, the spacer 1225 that separates second electrode 1230 for each pixel region can promptly form organic layer and etch buffer layers 1215, thereby form undercutting in resilient coating 1215 by following formation on resilient coating 1215.
In addition, although do not illustrate in the accompanying drawings, below second electrode 1230, also further form the moisture absorption layer.The moisture absorption layer is intended to stop damage organic luminous layer 1220.
Operation above using forms TFT, and form organic light emitting diode device on second substrate, 1200 inboard on first substrate, 1100 inboards.In this, TFT and organic light emitting diode device E are electrically connected to each other by second electrode 1230 that is formed on the wadding 1235.Therefore, when drive TFT, organic light emitting diode device E launches light.Light is delivered to second substrate 1200, thereby provides image for the user.
Fig. 7 A is to explain the cross-sectional view of making the method for organic elctroluminescent device according to four embodiment of the invention to 7G.
With reference to Fig. 7 A, provide first substrate 1400.First substrate 1400 is glass substrate or plastic base.
On first substrate 1400, form conductive layer.With the conductive layer composition, thereby form grid line (not shown), from the grid 1402 of grid line branch be positioned at the grid pad connecting portion 1413 of grid line end with a direction.
In addition, although do not illustrate in the accompanying drawing, also further form power line that be arranged in parallel with the spaced apart constant distance of grid line and with grid line and the ground pad connecting portion that is positioned at the power line end.
Afterwards, comprising formation gate insulation layer 1401 on first substrate, the 1400 whole surfaces of gate electrode 1402 and grid pad connecting portion 1413.Gate insulation layer 1401 is the lamination of silicon oxide layer, silicon nitride layer or these layers of the formation of use chemical vapor deposition (CVD).
With reference to Fig. 7 B, successive sedimentation and composition are positioned at the amorphous si-layer and the conductive layer of amorphous si-layer, usefulness p-type or n-type doping impurity on the gate insulation layer 1401, thereby form active patterns 1412 corresponding to grid 1402, wherein in active patterns 1412, be laminated with channel pattern 1412a and ohmic contact layer 1412b.
With reference to Fig. 7 C, on the gate insulation layer 1401 that comprises active layer 1412, form the first conductive pattern L1 and the second conductive pattern L2 continuously, and with its composition, thereby form and grid line data line crossing (not shown), the data pads 1420 that is positioned at the data wire end, source/drain 1421a and 1421b.Simultaneously, form the grid pad 1410 that separates with data wire.
In addition, although do not illustrate in the accompanying drawings, can further form the ground pad and the common electric voltage pad of island shape.
Here, first conductive pattern is formed by the electric conducting material with corrosion resistance by deposition ITO or IZO.In addition, chemical reaction does not take place with the first conductive pattern L1 in the second conductive pattern L2, and it forms by Cr or Mo, and these materials are the low resistance conductive materials with resistance littler than the first conductive pattern L1.
Operation above using forms the TFT that comprises grid 1402, active patterns 1412 and source/ drain 1422a and 1422b on first substrate 1400; Comprise the first conductive pattern L1 and be used to reduce grid pad 1410 and the data pads 1420 of the second conductive pattern L2 of the first conductive pattern L1 resistance with corrosion resistance.
With reference to Fig. 7 D, on the gate insulation layer 1401 that comprises TFT, grid pad 1410 and data pads 1420, form passivation layer 1402.Passivation layer 1402 can be organic layer or inorganic layer.For example, organic layer is be selected from the group that is made of following material a kind of: acrylic resin, benzocyclobutene (BCB), polyimides (PI) and novolaks resinoid.In addition, inorganic layer is the lamination of silicon oxide layer, silicon nitride layer or these layers.
In passivation layer 1402, form the contact hole that exposes drain electrode 1422b, data pads connecting portion 1413, grid pad 1410 and data pads 1420 respectively.
In this, contact hole comprises the first contact hole P1 and the second contact hole P2 that exposes grid pad 1410 two ends respectively.
With reference to Fig. 7 E, deposits conductive material on the passivation layer 1402 that comprises contact hole, and with its composition, thereby form the line 1415 that grid pad connecting portion 1413 is electrically connected to grid pad 1410.Therefore, the selection signal that applies by grid pad 1410 is delivered to grid line by line 1415 and grid pad connecting portion 1413, and finally imposes on TFT, thus turn-on grid electrode 1402.
Operation above using can form the grid pad 1410 and the data pads 1420 that comprise the first conductive pattern L1 and be exposed to the outside simultaneously.
Can further form the connection electrode 1425 that is electrically connected to exposed drain 1422b by contact hole simultaneously.Connection electrode 1425 is designed for compensating the loss of drain electrode 1422b in forming contact hole operation process.
Simultaneously, with reference to Fig. 7 F, provide second substrate 1500 that is formed with organic light emitting diode device E on it.
To be described in detail in the operation that forms organic light emitting diode device E on second substrate 1500 below.In the first step, provide second substrate 1500.On second substrate 1500, form first electrode 1510 as public electrode.
On first electrode 1510, form the resilient coating 1515 that limits each pixel region.Resilient coating 1515 is insulating barriers.On resilient coating 1515, form spacer 1525.Here, form spacer 1525 with back taper dividing wall shape.In this, spacer 1525 is formed by organic insulator.In addition, the wadding 1535 of formation and spacer 1525 spaced apart preset distances on resilient coating 1515.
Comprising the continuous organic luminous layer 1520 and second electrode 1530 of forming on first electrode, the 1510 whole surfaces of wadding 1535.In this, second electrode 1530 is separated into sub-pixel automatically by spacer 1525.In addition, because second electrode 1530 has covered the top of wadding 1535, so project upwards corresponding to a part second electrode 1530 of wadding 1535.
In this, before forming organic luminous layer 1520, further form hole injection layer and/or hole transmission layer.In addition, can form further after forming organic luminous layer 1520 that the hole suppresses layer, in electron transfer layer and the electron injecting layer at least one.
Here, on second electrode 1530, further form moisture absorption layer (not shown).The moisture absorption layer comprises BaO or CaO.Therefore, because moisture absorption layer protection organic light emitting diode device E avoids penetrating into the moisture and the oxygen of device, so can stop reducing of whole device lifetime.
With reference to Fig. 7 G, at first substrate 1400 that comprises TFT or comprise form seal pattern 1600 on second substrate 1500 of organic light emitting diode device E after, carry out two packaging process that substrate is bonded to one another, thereby prepared organic elctroluminescent device.Seal pattern 1600 forms leap and exposes the first contact hole P1 at grid pad 1410 two ends and the part between the second contact hole P2 respectively.In addition, so form seal pattern 1600, promptly grid pad connecting portion 1413 is positioned at seal pattern 1600.Therefore, grid pad connecting portion 1413 is not exposed to the outside.
In this, the drain electrode 1422b of first substrate 1400 contacts with a part second electrode of giving prominence to by the wadding 1535 of second substrate 1,500 1530.
In addition, in order to remove moisture and oxygen, fill inert gas at first and second substrates 1400 and 1500 inside that form.By doing like this, can stop the life-span that is formed on the organic luminous layer 1420 on second substrate 1500 to reduce or stop because the stain that moisture and oxygen produce.
Fig. 8 A is to explain the cross-sectional view of making the method for organic elctroluminescent device according to fifth embodiment of the invention to 8D.Here, because except forming the grid pad by the sedimentary sequence that changes first conductive pattern and second conductive pattern, identical according to the method for the manufacturing organic elctroluminescent device of fifth embodiment of the invention with method according to the manufacturing organic elctroluminescent device of second embodiment of the invention, so will omit the description of same section.Identical reference marker is represented components identical.
With reference to Fig. 8 A, on first substrate 1400, form conductive layer.With the conductive layer composition, thereby form grid line (not shown), from the grid 1402 of grid line branch be positioned at the gate pads connecting portion 1413 of grid line end with a direction.
Comprising formation gate insulation layer 1401 on first substrate, the 1400 whole surfaces of grid 1402 and grid pad connecting portion 1413.
On gate insulation layer 1401, form the active layer 1412 that wherein is laminated with channel layer 1412a and ohmic contact layer 1412b.
Afterwards, the continuous stacked second conductive pattern L2 and the first conductive pattern L1 on the gate insulation layer 1401 that comprises active layer 1412, and with its composition, thereby form source/ drain 1422a and 1422b, data wire (not shown), be positioned at the data pads 1420 of data wire end and the grid pad 1410 of island shape.
Here, the first conductive pattern L1 is formed by the electric conducting material with corrosion resistance by deposition ITO or IZO.In addition, chemical reaction does not take place with the first conductive pattern L1 in the second conductive pattern L2, and it forms by Cr or Mo, and these materials are the low resistance conductive material formation with resistance littler than the first conductive pattern L1.
With reference to Fig. 8 B, on the gate insulation layer 401 that comprises source/ drain 1422a and 1422b, grid pad 1410 and data pads 1420, form passivation layer 1402.
In passivation layer 1402, form the contact hole that exposes drain electrode 1422b, pad connecting portion 1413, grid pad 1410 and data pads 1420 respectively.Contact hole comprises the first contact hole P1 and the second contact hole P2 that exposes grid pad 1410 two ends respectively.
Etching is exposed portions grid pad 1410 and data pads 1420 and as the part second conductive pattern L2 on grid pad connecting portion 1413 upper stratas by being formed on contact hole in the passivation layer 1402, thereby forms the opening that exposes the first conductive pattern L1.In other words, the first conductive pattern L1 with corrosion resistance is exposed to the outside, thereby contacts with external circuit.
With reference to Fig. 8 C, deposits conductive material on the passivation layer 1402 that comprises contact hole.With the electric conducting material composition of deposition, thereby be formed for grid pad connecting portion 1413 is electrically connected to the line 1415 of grid pad 1410.In addition, because drain electrode 1422b loses in the operation process that forms contact hole, so can further be formed for compensating the connection electrode 1425 of this loss.
With reference to Fig. 8 D, at first substrate 1400 that comprises TFT or comprise form seal pattern 1600 on second substrate 1500 of organic light emitting diode device E after, carry out two packaging process that substrate is bonded to one another, thereby prepared organic elctroluminescent device.
As mentioned above, by on two different substrates, forming TFT and organic light emitting diode device respectively, and two substrates is bonded to one another and prepared electro-luminescence display device, thereby be expected to reduce ratio of defects and boost productivity.
In addition, the welding disk that is exposed to the outside is formed by the electric conducting material with strong corrosion resistance, thereby has stoped the erosion of welding disk.
In addition, because stoped the erosion of welding disk, thus can solve the defect problem that causes by the erosion of welding disk, and improved reliability.
In addition, because form welding disk simultaneously, so do not need independent operation with corrosion resistance.
The present invention can do various modifications and variations, and this it will be apparent to those skilled in the art that.Thereby, the invention is intended to cover the modifications and variations of the present invention that fall in appended claims and the equivalent scope thereof.
Claims (53)
1. organic elctroluminescent device comprises:
Be limited with first substrate of first area and second area;
Be formed on corresponding a part of first substrate in first area on grid line and extend and be formed on grid pad on the second area from grid line;
Extend to the first area of first substrate and the data pads of second area;
Be formed on the gate insulation layer on grid line, grid pad and the data pads;
Be arranged on the gate insulation layer and grid line data line crossing and the data pads connecting portion that is positioned at the data wire end;
Be formed at least one thin-film transistor on the crosspoint of grid line and data wire;
Passivation layer, it comprises the contact hole that exposes a part of thin-film transistor, data pads, grid pad and data pads connecting portion; With
Be arranged on and be used for line that data pads is electrically connected with the data pads connecting portion on the passivation layer.
2. organic elctroluminescent device according to claim 1, wherein data pads forms by stacked first conductive pattern and second conductive pattern, and first conductive pattern is formed by the electric conducting material with corrosion resistance.
3. organic elctroluminescent device according to claim 2, wherein first conductive pattern is by a kind of formation the in tin indium oxide and the indium zinc oxide.
4. organic elctroluminescent device according to claim 2, wherein first conductive pattern has first resistance, and second conductive pattern has second resistance littler than first resistance of first conductive pattern.
5. organic elctroluminescent device according to claim 2, wherein second conductive pattern is by a kind of formation the among Mo and the Cr.
6. organic elctroluminescent device according to claim 2, wherein data pads comprises first conductive pattern that is formed on second conductive pattern.
7. organic elctroluminescent device according to claim 2, wherein data pads comprises first conductive pattern that is formed on second conductive pattern, this second conductive pattern comprises the opening that exposes a part of first conductive pattern.
8. organic elctroluminescent device according to claim 1, wherein the grid pad is formed by the electric conducting material identical with data pads.
9. organic elctroluminescent device according to claim 1 further comprises:
Be formed on the seal pattern on the interface between first area and the second area; With
With the spaced apart preset distance of first substrate and use seal pattern to be bonded to second substrate of first substrate.
10. organic elctroluminescent device according to claim 9 further comprises the organic light emitting diode device that is formed on the second substrate inner surface.
11. organic elctroluminescent device according to claim 1 further comprises the connection electrode that is formed by the electric conducting material identical with line, it is connected to a part of thin-film transistor by contact holes exposing.
12. an organic elctroluminescent device comprises:
First substrate;
The data pads that forms by stacked at least first conductive pattern and second conductive pattern on first substrate;
Be formed on the gate insulation layer on the data pads;
Be formed on the data pads connecting portion on the gate insulation layer;
Be formed on the data pads connecting portion and have the passivation layer of the contact hole that exposes a part of data pads connecting portion; With
Be positioned at and be used for line that the data pads connecting portion is electrically connected with data pads on the passivation layer,
Wherein first conductive pattern is formed by the electric conducting material with corrosion resistance.
13. organic elctroluminescent device according to claim 12, wherein first conductive pattern is by a kind of formation the in tin indium oxide and the indium zinc oxide.
14. organic elctroluminescent device according to claim 12, wherein first conductive pattern has first resistance, and second conductive pattern has second resistance littler than first resistance of first conductive pattern.
15. organic elctroluminescent device according to claim 12, wherein second conductive pattern is by a kind of formation the among Mo and the Cr.
16. organic elctroluminescent device according to claim 12 further comprises:
The grid line that forms by the electric conducting material identical with data pads on the gate insulation layer; With
Grid pad from the grid line extension.
17. organic elctroluminescent device according to claim 12, wherein data pads comprises first conductive pattern that is formed on second conductive pattern.
18. organic elctroluminescent device according to claim 12, wherein data pads comprises first conductive pattern that is formed on second conductive pattern, and this second conductive pattern comprises the opening that exposes a part of first conductive pattern.
19. organic elctroluminescent device according to claim 12 further comprises with the spaced apart preset distance of first substrate and uses seal pattern to be bonded to second substrate of first substrate.
20. organic elctroluminescent device according to claim 19 further comprises the organic light emitting diode device that is formed on the second substrate inner surface.
21. organic elctroluminescent device according to claim 19, wherein line is formed on corresponding with second substrate and is formed with the intra-zone of seal pattern.
22. organic elctroluminescent device according to claim 12 further comprises the connection electrode that is formed by the electric conducting material identical with line, it is connected to a part of thin-film transistor by contact holes exposing.
23. a method of making organic elctroluminescent device, this method comprises:
First substrate is set;
Continuous stacked first conductive layer and second conductive layer on first substrate, and with the first and second conductive layer compositions, thereby grid, grid line, grid pad and data pads formed;
On grid, grid line, grid pad and data pads, form gate insulation layer;
On a part of gate insulation layer, form active layer, source/drain, data wire and data pads connecting portion corresponding to grid;
On the gate insulation layer that comprises active layer, source/drain, data wire and data pads connecting portion, form passivation layer;
On passivation layer, form the contact hole that exposes part drain electrode, grid pad connecting portion, grid pad and data pads; With
Be formed for line that data pads is connected with the data pads connecting portion.
24. method according to claim 23, wherein first conductive layer is by a kind of formation the in tin indium oxide and the indium zinc oxide, and second conductive layer is by a kind of formation the among Mo and the Cr.
25. method according to claim 24 comprises that etching second conductive layer exposes first conductive layer thereby wherein form contact hole.
26. method according to claim 23, wherein first conductive layer is by a kind of formation the among Mo and the Cr, and second conductive layer is by a kind of formation the in tin indium oxide and the indium zinc oxide.
27. method according to claim 23 wherein forms line and is included in the last connection electrode that forms of the part drain electrode that exposes by contact hole.
28. method according to claim 23, the contact hole that wherein exposes data pads comprise first contact hole and second contact hole that exposes the data pads two ends respectively.
29. method according to claim 28 further comprises:
Setting is formed with second substrate of organic light emitting diode device;
Form seal pattern on one in the periphery of the periphery of first substrate and second substrate; With
Two substrates are bonded to one another.
30. method according to claim 29, wherein seal pattern is formed on the outside of line.
31. method according to claim 29, wherein seal pattern strides across the part between first and second contact holes and forms.
32. an organic elctroluminescent device comprises:
First substrate;
Be positioned at grid line and the grid pad connecting portion that is formed on the grid line end on first substrate;
Be formed on the gate insulation layer on first substrate that comprises grid line and grid pad connecting portion;
The data wire that on gate insulation layer, forms, the data pads that is positioned at the data wire end and the grid pad of separating with data wire by stacked at least first conductive pattern and second conductive pattern; With
Be formed on data wire, data pads and the grid pad and comprise the passivation layer of the contact hole that exposes a part of grid pad connecting portion, data pads and grid pad; With
Be positioned at and be used for line that grid pad connecting portion is electrically connected with the grid pad on the passivation layer,
Wherein first conductive pattern is formed by the electric conducting material with corrosion resistance.
33. organic elctroluminescent device according to claim 32, wherein first conductive pattern is by a kind of formation the in tin indium oxide and the indium zinc oxide.
34. organic elctroluminescent device according to claim 32, wherein second conductive pattern forms by having the low resistance conductive material littler than the resistance of first conductive pattern.
35. organic elctroluminescent device according to claim 32, wherein second conductive pattern is by a kind of formation the among Mo and the Cr.
36. organic elctroluminescent device according to claim 32, wherein data pads comprises first conductive pattern that is formed on second conductive pattern.
37. organic elctroluminescent device according to claim 32, wherein data pads comprises first conductive pattern that is formed on second conductive pattern, and this second conductive pattern comprises the opening that exposes a part of first conductive pattern.
38. organic elctroluminescent device according to claim 32, wherein grid line and data wire form intersected with each otherly, and the thin-film transistor that is formed on grid line and the data wire zone intersected with each other further are set.
39., further comprise the connection electrode that forms and be electrically connected by the electric conducting material identical with the drain electrode of thin-film transistor with line according to the described organic elctroluminescent device of claim 38.
40. organic elctroluminescent device according to claim 32 further comprises with the spaced apart preset distance of first substrate and uses seal pattern to be bonded to second substrate of first substrate.
41., further comprise the organic light emitting diode device that is formed on the second substrate inner surface according to the described organic elctroluminescent device of claim 40.
42. according to the described organic elctroluminescent device of claim 40, wherein line is formed on corresponding with second substrate and is formed with the intra-zone of seal pattern.
43. organic elctroluminescent device according to claim 32 further comprises:
Be positioned on first substrate and be parallel to the power line that grid line forms; With
Be positioned at the ground pad connecting portion of power line end.
44., further comprise being positioned on the gate insulation layer and the ground pad that is electrically connected with ground pad connecting portion according to the described organic elctroluminescent device of claim 43.
45. a method of making organic elctroluminescent device, this method comprises:
First substrate is set;
On first substrate, form after the conductive layer,, thereby form grid, grid line and gate pads connecting portion the conductive layer composition;
On grid, grid line and gate pads connecting portion, form gate insulation layer;
On a part of gate insulation layer, form active layer corresponding to grid;
On comprising the gate insulation layer of active layer, form after first conductive layer and second conductive layer continuously, with the first and second conductive layer compositions, be arranged in the source/drain of active layer respective regions and be positioned at data wire, grid pad and data pads on the gate insulation layer thereby form simultaneously;
On active layer, source/drain, data wire, grid pad and data pads, form passivation layer;
In passivation layer, form the contact hole that exposes part drain electrode, grid pad connecting portion, grid pad and data pads;
On passivation layer, be formed for line that the grid pad is connected with grid pad connecting portion.
46. according to the described method of claim 45, wherein first conductive layer is by a kind of formation the in tin indium oxide and the indium zinc oxide, second conductive layer is by a kind of formation the among Mo and the Cr.
47., wherein form contact hole and comprise that etching second conductive layer is to expose first conductive layer according to the described method of claim 46.
48. according to the described method of claim 45, wherein first conductive layer is by a kind of formation the among Mo and the Cr, second conductive layer is by a kind of formation the in tin indium oxide and the indium zinc oxide.
49., wherein form line and be included in the last connection electrode that forms of the part drain electrode that exposes by contact hole according to the described method of claim 45.
50. according to the described method of claim 45, the contact hole that wherein exposes data pads comprises first contact hole and second contact hole that exposes the data pads two ends respectively.
51., further comprise according to the described method of claim 45:
Setting is formed with second substrate of organic light emitting diode device;
Form seal pattern on one in the periphery of the periphery of first substrate and second substrate; With
Two substrates are bonded to one another.
52. according to the described method of claim 51, wherein seal pattern is formed on the outside of line.
53. according to the described method of claim 51, wherein seal pattern strides across the part between first and second contact holes and forms.
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| KR1020050133194A KR101232549B1 (en) | 2005-12-29 | 2005-12-29 | Organic electro-luminescence display device and method for fabricating of the same |
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| CN102420207A (en) * | 2010-09-24 | 2012-04-18 | 三星移动显示器株式会社 | Organic light emitting display device and method of manufacturing the same |
| CN101814522B (en) * | 2009-02-24 | 2013-04-03 | 乐金显示有限公司 | Top emission inverted organic light emitting diode display device and manufacturing method thereof |
| CN101763776B (en) * | 2008-12-22 | 2013-04-03 | 乐金显示有限公司 | Organic electroluminescent display device and method of manufacturing the same |
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2005
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Also Published As
| Publication number | Publication date |
|---|---|
| CN100578786C (en) | 2010-01-06 |
| KR101232549B1 (en) | 2013-02-12 |
| KR20070070547A (en) | 2007-07-04 |
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