CN1992167A - Method for forming polycrystalline silicon film - Google Patents
Method for forming polycrystalline silicon film Download PDFInfo
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- CN1992167A CN1992167A CN 200510135272 CN200510135272A CN1992167A CN 1992167 A CN1992167 A CN 1992167A CN 200510135272 CN200510135272 CN 200510135272 CN 200510135272 A CN200510135272 A CN 200510135272A CN 1992167 A CN1992167 A CN 1992167A
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Abstract
This invention relates to a forming polysilicon film method, including: providing a forming polysilicon film system; providing a substrate locating on the running path of the laser beam in the rear of mask, and the substrate forming an amorphous silicon film; using the laser beam through the mask to process the first laser rays on the amorphous silicon film, to make the melt of multiple first strip regions of the amorphous silicon film of the multiple first light transmission region corresponding to the mask; removing the laser beam, so that the melted amorphous silicon films of the multiple first strip regions form an polysilicon film; removing the substrate with some distance; using the laser beam through the mask to process the second laser rays on this polysilicon film; and then removing the laser beam. Through the use of two laser irradiations for consecutive lateral solidification, and the mask design to be light graphic, the invention increases the crystal grain size and production yield.
Description
Technical field
The present invention relates to a kind of method that forms low-temperature polysilicon film, particularly relate to the method for the formation low-temperature polysilicon film that the continuously lateral of twice laser radiation of a kind of use solidifies.
Background technology
In semiconductor is made, because amorphous silicon (amorphous silicon) film can be formed on the glass substrate under the environment of low temperature, therefore (thin-film transistor TFT) is used in field of liquid crystal amorphous silicon film transistor at present in large quantities.Yet the electronics mobility of amorphous silicon membrane is slower than polysilicon membrane, makes that the reaction time of amorphous silicon film transistor LCD is slower, has also limited its application on large size panel.Therefore industry and academia all are devoted to the low temperature amorphous silicon thin film is transformed in the laser annealing mode research and development of polysilicon membrane.
At present, polysilicon membrane now is applied in the fields such as solar cell, LCD, organic light emitting display gradually.Yet the quality of polysilicon membrane depends on the size of crystallite dimension; Therefore, under the prerequisite of taking into account high yield (throughput), producing the polysilicon membrane with large scale crystal grain promptly becomes the ultimate challenge that industry and academia are faced.
Figure 1A solidifies the system schematic that (SLS) forms polysilicon membrane for the existing continuously lateral that adopts, and this system mainly comprises: laser generator 11, to produce a laser beam 12; And a mask 13, being arranged on the travel path of this laser beam 12, there are a plurality of transmission region 13a and a plurality of light tight regional 13b in this mask top.Wherein each transmission region 13a is that a width is the stripe region of W.Laser beam 12 by these a plurality of transmission region 13a is radiated at the amorphous silicon membrane 15 on the substrate 14 of mask 13 belows, makes that a plurality of width that shone by laser beam 12 on the amorphous silicon membrane 15 are that the stripe region 15a of W produces fusing.After removing laser beam 12, each these a plurality of stripe region 15a begins from both sides to solidify, and the main crystal boundary (primary grain boundary) 16 that produces the long limit of parallel this stripe region 15a is in this stripe region 15a centre, and form crystal grain length is the polysilicon membrane of 1/2W, shown in Figure 1B.
In order to promote output, United States Patent (USP) the 6th, 908 discloses the method for the formation polysilicon membrane that the continuously lateral of twice laser radiation of a kind of employing solidifies for No. 835.At United States Patent (USP) the 6th, 908, in No. 835, the design by mask with laser light graphically with the control crystallite dimension, shown in Fig. 2 A to Fig. 2 C.
In Fig. 2 A, mask 20 has a plurality of first rectangular transmission region 21 and a plurality of second rectangular transmission region 22, make amorphous silicon membrane (not shown) on the substrate (not shown) of mask 20 belows by moving along X-axis, carry out twice laser radiation with respect to this mask 20.In Fig. 2 B, given each first transmission region 21 is W with the width of each second transmission region 22, the interval S of per two first transmission regions 21 and per two second transmission regions 22, first transparent area 21 and second transparent area 22 exist a side-play amount OS (OS 〉=1/2W), then the amorphous silicon membrane (not shown) on the substrate (not shown) below the mask 20 solidifies gained through the continuously lateral of laser radiation for the first time the first main crystal boundary (Central Line 211 of corresponding first transmission region 21) with through the distance lambda between the second main crystal boundary (Central Line 221 of corresponding second transmission region 22) of the continuously lateral curing gained of the laser radiation second time=(W+S)/2.Yet in actual applications, the continuously lateral shown in Figure 1A solidifies (SLS) formation polysilicon membrane system can be provided with a projection lens system (not shown) between mask 13 and substrate 14.The enlargement ratio of supposing this projection lens system is N, and then the crystallite dimension of the polysilicon that is obtained on substrate 14 is λ/N.For instance, if W=27.5 μ is m, S=7.5 μ m, N=5, then the crystallite dimension of the polysilicon that is obtained is λ/N=[(W+S)/2]/5=3.5 μ m, as shown in Fig. 2 C.
In order to obtain bigger crystallite dimension, United States Patent (USP) the 6th, 726 discloses the repeatedly method of the formation polysilicon membrane that solidifies of the continuously lateral of laser radiation of a kind of employing for No. 768.At United States Patent (USP) the 6th, 726, in No. 768, by mask design with laser light graphically with the control crystallite dimension, as shown in Figure 3.In Fig. 3, mask 30 has a plurality of first transmission regions 31, a plurality of second transmission region 32, a plurality of the 3rd transmission region 33, a plurality of the 4th transmission region 34 and a plurality of the 5th transmission regions 35, make amorphous silicon membrane (not shown) on the substrate (not shown) of mask 30 belows by moving along X-axis, carry out repeatedly laser radiation with respect to this mask 20.Though United States Patent (USP) the 6th, 726, No. 768 method can be used for forming bigger crystallite dimension, need the long time, and cause output to reduce.
Therefore, need a kind of method of making polysilicon membrane badly, use the continuously lateral of twice laser radiation to solidify, and by mask design with laser light graphically increasing crystallite dimension, and carry the production energy.
Summary of the invention
Technical problem underlying to be solved by this invention is to provide a kind of method that forms polysilicon membrane, uses the continuously lateral of twice laser radiation to solidify, and by mask design with laser light graphically to increase crystallite dimension.
Less important technical problem to be solved by this invention is to provide a kind of method that forms polysilicon membrane, uses the continuously lateral of twice laser radiation to solidify, and by mask design with laser light graphically to improve output.
For achieving the above object, the invention provides a kind of method that forms polysilicon membrane, may further comprise the steps:
(a) provide one to form the polysilicon membrane system, mainly comprise
One laser generator produces a laser beam; And
One mask, be arranged on the travel path of this laser beam, this mask comprise each other at a distance of one at interval S a plurality of first transmission regions and each other at a distance of a plurality of second transmission regions of S at interval, wherein, these a plurality of first transmission regions are adjacent with these a plurality of second transmission regions and have a width W and a length L, the direction of parallel this length L of one center line of these each a plurality of first transmission regions, and extend in one of these a plurality of second transmission regions, make to have a side-play amount OS between this first transparent area and this second transparent area;
(b) provide on this travel path of this laser beam of a substrate in this mask rear, be formed with an amorphous silicon membrane on this substrate;
(c) see through this mask with this laser beam this amorphous silicon membrane is carried out laser radiation first time, make a plurality of first stripe region on this amorphous silicon membrane of these a plurality of first transmission regions on should mask are melted;
(d) remove this laser beam, make the amorphous silicon membrane on these a plurality of first stripe region of this fusing form a polysilicon membrane with one first crystallite dimension;
(e) move this substrate one distance along this length L, this distance is not more than this length L, makes these a plurality of first stripe region to these a plurality of second transmission regions on should mask;
(f) see through this mask with this laser beam this polysilicon membrane is carried out the laser radiation second time, make a plurality of first stripe region on this polysilicon membrane of these a plurality of second transmission regions on should mask are melted again; And
(g) remove this laser beam, make the polysilicon membrane on these these a plurality of first stripe region that melt again form a polysilicon membrane with one second crystallite dimension.
The present invention also provides a kind of mask that forms polysilicon membrane, comprising:
Each other at a distance of one at interval S a plurality of first transmission regions and each other at a distance of a plurality of second transmission regions of S at interval;
Wherein, these a plurality of first transmission regions are adjacent with these a plurality of second transmission regions and have a width W and a length L, the direction of parallel this length L of one center line of these each a plurality of first transmission regions, and extend in one of these a plurality of second transmission regions, make to have a side-play amount between this first transparent area and this second transparent area.
The present invention is solidified by the continuously lateral that uses twice laser radiation, and by mask design with laser light graphically to increase crystallite dimension and to have improved output.
Description of drawings
Figure 1A is the existing formation polysilicon membrane system schematic that adopts continuously lateral to solidify (SLS);
Figure 1B is the formed polysilicon membrane top view of formation polysilicon membrane system of Figure 1A;
Fig. 2 A is a United States Patent (USP) the 6th, 908, the mask top view that is adopted for No. 835;
Fig. 2 B is the mask transmission region detailed dimensions figure of Fig. 2 A;
Fig. 2 C is according to United States Patent (USP) the 6th, 908, and the continuously lateral of twice laser radiation of No. 835 solidifies formed polysilicon structure figure;
Fig. 3 is a United States Patent (USP) the 6th, 726, the mask top view that is adopted for No. 768;
Fig. 4 A is for forming the mask top view that the polysilicon membrane method is adopted;
Fig. 4 B is the mask transmission region detailed dimensions figure of Fig. 4 A;
Fig. 4 C is that the continuously lateral of twice laser radiation solidifies formed polysilicon structure figure; And
Fig. 5 is the flow chart of formation polysilicon membrane method of the present invention.
Wherein, Reference numeral:
11 laser generators, 12 laser beams
13 mask 13a transmission regions
Light tight regional 14 substrates of 13b
15 amorphous silicon membrane 15a stripe region
16 main crystal boundary 20 masks
The Central Line of 21 first transmission regions, 211 first transmission regions
22 second transmission region W width
The S of Central Line of 221 second transmission regions at interval
OS side-play amount λ/N crystal grain length
30 masks, 31 first transmission regions
32 second transmission regions 33 the 3rd transmission region
34 the 4th transmission regions 35 the 5th transmission region
40 masks, 41 first transmission regions
Central Line's 42 second transmission regions of 411 first transmission regions
The Central Line of 421 second transmission regions
51 provide one to form the polysilicon membrane system
52 provide a substrate in this mask below
53 carry out the laser radiation first time
54 remove laser beam
55 move this substrate
56 carry out the laser radiation second time
57 remove laser beam
Embodiment
For making your auditor understanding be arranged further and understand to feature of the present invention, purpose and function, existing conjunction with figs. describe in detail as after.
In the present invention, use the continuously lateral of twice laser radiation to solidify, and by mask design with laser light graphically to increase crystallite dimension.Fig. 4 A and Fig. 4 B be the mask top view that adopted of formation polysilicon membrane method of the present invention with and detailed dimensions figure; Fig. 4 C is that the continuously lateral of twice laser radiation of the present invention solidifies formed polysilicon structure figure.
In Fig. 4 A and Fig. 4 B, mask 40 comprise each other at a distance of one at interval S a plurality of first transmission regions 41 and each other at a distance of a plurality of second transmission regions 42 of S at interval, wherein should a plurality of first transmission regions 41 adjacent with these a plurality of second transmission regions 42 and have a width W and a length L.The direction of parallel this length L of one center line of these each a plurality of first transmission regions, and extend in one of these a plurality of second transmission regions, make to have a side-play amount OS between this first transparent area 41 and this second transparent area 42.
By the mask 40 among Fig. 4 A and Fig. 4 B, the invention discloses a kind of method that forms polysilicon membrane, its detailed step is as shown in Figure 5.This method may further comprise the steps:
At first, as described in step 51, provide one to form the polysilicon membrane system, this system comprises that mainly one produces the laser generator and a mask of a laser beam.The main framework of formation polysilicon membrane used in the present invention system is similar in appearance to existing structure shown in Figure 1, so do not repeat them here.Mask used in the present invention is then shown in Fig. 4 A and Fig. 4 B.
Then, as described in step 52, provide a substrate (shown in Fig. 4 C) on the travel path of the laser beam at mask 40 rears as shown in Fig. 4 A and Fig. 4 B, be formed with an amorphous silicon membrane (not shown) on this substrate.
In step 53, see through 40 pairs of these amorphous silicon membranes of this mask with laser beam and carry out laser radiation first time, make a plurality of first stripe region on the amorphous silicon membrane of a plurality of first transmission regions 41 on should mask 40 are melted.
Then, as described in step 54, remove this laser beam, make amorphous silicon membrane on a plurality of first stripe region of this fusing solidify (SLS) and form a polysilicon membrane with one first crystallite dimension by continuously lateral.Wherein, one first main crystal boundary (Central Line 411 of corresponding first transmission region 41) is arranged on a plurality of first stripe region.At this moment, this first crystallite dimension equals 1/2W.
In step 55, along length L (being X-direction) moving substrate one distance, this distance is not more than this length L, makes these a plurality of first stripe region to these a plurality of second transmission regions 42 on should mask 40.
Then, in step 56, see through 40 pairs of these polysilicon membranes of this mask with this laser beam and carry out the laser radiation second time, a plurality of first stripe region on this polysilicon membranes of a plurality of second transmission regions 42 on the corresponding mask 40 are melted again.
At last, in step 57, remove this laser beam, make the polysilicon membrane on these these a plurality of first stripe region that melt again form a polysilicon membrane with one second crystallite dimension.At this moment, one second main crystal boundary (Central Line 421 of corresponding second transmission region 42) is arranged on a plurality of first stripe region.At this moment, this second crystallite dimension is λ, is W+S.
Yet in actual applications, the continuously lateral that is provided in the step 51 solidifies (SLS) formation polysilicon membrane system can be provided with a projection lens system (not shown) between mask and substrate.The enlargement ratio of supposing this projection lens system is N, and then the crystallite dimension of the polysilicon that is obtained on substrate is λ/N, as shown in Fig. 4 C.
In above-mentioned discussion, this method is characterised in that the first main crystal boundary fusing that is produced by solidifying after the feasible laser radiation for the first time of the laser radiation second time as can be known, and then forms the second main crystal boundary that solidifies after the laser radiation for the second time.At this moment, when not using projection lens system, width that the crystallite dimension of formed polysilicon is transmission region and summation at interval, i.e. the interval λ of 421 of two Central Lines of a plurality of second transmission regions 42 on the mask; When using projection lens system, the crystallite dimension of formed polysilicon is λ/N.
Specifically, in specific embodiments of the invention, when not using projection lens system, if given each first transmission region 41 is W=5.5 μ m with the width of each second transmission region 42, the interval S=0.75 μ m of per two first transmission regions 41 and per two second transmission regions 42, and the side-play amount OS of first transmission region and second transmission region is 1.75 μ m, and then the amorphous silicon membrane on the substrate solidifies the distance lambda=W+S=6.25 μ m of 421 of the second main crystal boundaries of gained through the continuously lateral of twice laser radiation.Yet, when considering to use the enlargement ratio N=5 of projection lens system and this projection lens system, if W=27.5 μ m, S=3.75 μ m, OS=10 μ m, the distance of solidifying 421 of the second main crystal boundaries of gained through the continuously lateral of twice laser radiation of the amorphous silicon membrane on the substrate then, promptly the crystallite dimension of formed polysilicon is λ/N=(W+S)/5=6.25 μ m.
In sum, the invention provides a kind of method that forms polysilicon membrane, use the continuously lateral of twice laser radiation to solidify when knowing, and by mask design with laser light graphically increasing crystallite dimension, and improve output.So the present invention has novelty, creativeness, practicality, should meet the patent application important document undoubtedly.
Above-mentioned is preferred embodiment of the present invention only, is not to be used for limiting scope of the invention process, and all equivalences of doing according to the described shape of claim of the present invention, structure, feature, spirit and method change and revise, and all should be included in the scope of the present invention.
Claims (7)
1, a kind of method that forms polysilicon membrane is characterized in that, may further comprise the steps:
Provide one to form the polysilicon membrane system, mainly comprise
One laser generator produces a laser beam; And
One mask, be arranged on the travel path of this laser beam, this mask comprise each other at a distance of one at interval S a plurality of first transmission regions and each other at a distance of a plurality of second transmission regions of S at interval, wherein, these a plurality of first transmission regions are adjacent with these a plurality of second transmission regions and have a width W and a length L, the direction of parallel this length L of one center line of these each a plurality of first transmission regions, and extend in one of these a plurality of second transmission regions, make to have a side-play amount OS between this first transparent area and this second transparent area;
Provide on this travel path of this laser beam of a substrate in this mask rear, be formed with an amorphous silicon membrane on this substrate;
See through this mask with this laser beam this amorphous silicon membrane is carried out laser radiation first time, make a plurality of first stripe region on this amorphous silicon membrane of these a plurality of first transmission regions on should mask are melted;
Remove this laser beam, make the amorphous silicon membrane on these a plurality of first stripe region of this fusing form a polysilicon membrane with one first crystallite dimension;
Move this substrate one distance along this length L, this distance is not more than this length L, makes these a plurality of first stripe region to these a plurality of second transmission regions on should mask;
See through this mask with this laser beam this polysilicon membrane is carried out the laser radiation second time, make a plurality of first stripe region on this polysilicon membrane of these a plurality of second transmission regions on should mask are melted again; And
Remove this laser beam, make the polysilicon membrane on these these a plurality of first stripe region that melt again form a polysilicon membrane with one second crystallite dimension.
2, the method for formation polysilicon membrane as claimed in claim 1 is characterized in that, OS is less than 1/2W for this side-play amount.
3, the method for formation polysilicon membrane as claimed in claim 1 is characterized in that, this second crystallite dimension is W+S.
4, the method for formation polysilicon membrane as claimed in claim 1, it is characterized in that, this formation polysilicon membrane system also comprises a projection lens system, the enlargement ratio of this projection lens system be N and also be arranged at this mask and this substrate between this travel path of this laser beam on.
5, the method for formation polysilicon membrane as claimed in claim 4 is characterized in that, this second crystallite dimension is (W+S)/N.
6, a kind of mask that forms polysilicon membrane is characterized in that, comprising:
Each other at a distance of one at interval S a plurality of first transmission regions and each other at a distance of a plurality of second transmission regions of S at interval;
Wherein, these a plurality of first transmission regions are adjacent with these a plurality of second transmission regions and have a width W and a length L, the direction of parallel this length L of one center line of these each a plurality of first transmission regions, and extend in one of these a plurality of second transmission regions, make to have a side-play amount OS between this first transparent area and this second transparent area.
7, the mask of formation polysilicon membrane as claimed in claim 6 is characterized in that, OS is less than 1/2W for this side-play amount.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101352723A CN100431100C (en) | 2005-12-29 | 2005-12-29 | Method for forming polycrystalline silicon film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101352723A CN100431100C (en) | 2005-12-29 | 2005-12-29 | Method for forming polycrystalline silicon film |
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| CN1992167A true CN1992167A (en) | 2007-07-04 |
| CN100431100C CN100431100C (en) | 2008-11-05 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101221902B (en) * | 2008-02-03 | 2010-11-24 | 友达光电股份有限公司 | Mask used for continuous side direction crystal growing technology and laser crystallization method |
| CN102315106A (en) * | 2010-07-08 | 2012-01-11 | 中芯国际集成电路制造(上海)有限公司 | Laser thermal annealing method |
| CN104576438A (en) * | 2013-10-29 | 2015-04-29 | 昆山国显光电有限公司 | Device and method for preparing polycrystalline silicon thin film |
| US10396237B2 (en) | 2016-04-19 | 2019-08-27 | Boe Technology Group Co., Ltd. | Light-emitting diode substrate and manufacturing method thereof, and display device |
| CN110253134A (en) * | 2019-06-21 | 2019-09-20 | 武汉轻工大学 | Micro-nano processing method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1354341A1 (en) * | 2001-04-19 | 2003-10-22 | The Trustees Of Columbia University In The City Of New York | Method for single-scan, continuous motion sequential lateral solidification |
| KR100405080B1 (en) * | 2001-05-11 | 2003-11-10 | 엘지.필립스 엘시디 주식회사 | A method of crystallizing Si |
-
2005
- 2005-12-29 CN CNB2005101352723A patent/CN100431100C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101221902B (en) * | 2008-02-03 | 2010-11-24 | 友达光电股份有限公司 | Mask used for continuous side direction crystal growing technology and laser crystallization method |
| CN102315106A (en) * | 2010-07-08 | 2012-01-11 | 中芯国际集成电路制造(上海)有限公司 | Laser thermal annealing method |
| CN102315106B (en) * | 2010-07-08 | 2013-09-04 | 中芯国际集成电路制造(上海)有限公司 | Laser thermal annealing method |
| CN104576438A (en) * | 2013-10-29 | 2015-04-29 | 昆山国显光电有限公司 | Device and method for preparing polycrystalline silicon thin film |
| CN104576438B (en) * | 2013-10-29 | 2018-02-13 | 昆山国显光电有限公司 | A kind of apparatus and method for preparing polysilicon membrane |
| US10396237B2 (en) | 2016-04-19 | 2019-08-27 | Boe Technology Group Co., Ltd. | Light-emitting diode substrate and manufacturing method thereof, and display device |
| US11088296B2 (en) | 2016-04-19 | 2021-08-10 | Boe Technology Group Co., Ltd. | Light-emitting diode substrate and manufacturing method thereof, and display device |
| CN110253134A (en) * | 2019-06-21 | 2019-09-20 | 武汉轻工大学 | Micro-nano processing method |
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| CN100431100C (en) | 2008-11-05 |
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