CN1991588A - Method for fabricating printing plate with fine pattern using electric field - Google Patents
Method for fabricating printing plate with fine pattern using electric field Download PDFInfo
- Publication number
- CN1991588A CN1991588A CNA2006100801838A CN200610080183A CN1991588A CN 1991588 A CN1991588 A CN 1991588A CN A2006100801838 A CNA2006100801838 A CN A2006100801838A CN 200610080183 A CN200610080183 A CN 200610080183A CN 1991588 A CN1991588 A CN 1991588A
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- Prior art keywords
- printed board
- pattern
- conductive layer
- manufacture method
- photoresist
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/02—Engraving; Heads therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
- G03F7/0957—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer with sensitive layers on both sides of the substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/02—Engraving; Heads therefor
- B41C1/025—Engraving; Heads therefor characterised by means for the liquid etching of substrates for the manufacturing of relief or intaglio printing forms, already provided with resist pattern
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- ing And Chemical Polishing (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
- Printing Plates And Materials Therefor (AREA)
- Electroluminescent Light Sources (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
A fabricating method of a printing plate includes forming a first conductive layer on an upper surface of a printing plate, forming a second conductive layer on a lower surface of the printing plate, forming an etch-resist pattern by etching a portion of the first conductive layer, submerging the printing plate, the second conductive layer and the etch-resist pattern into an electrolytic solution, and applying an electrical field between the etch-resist pattern and the second conductive layer so that the electrolytic solution is dissociated to form an anisotropically etched fine pattern in the printing plate.
Description
Technical field
The present invention relates to a kind of manufacture method of plate, more specifically, relate to a kind of manufacture method of using the electric field manufacturing to have the printed panel of fine pattern.
Background technology
Usually, liquid crystal display device by use the electric field controls liquid crystal molecule towards the light transmission of controlling liquid crystal molecule, thereby Show Picture.For this reason, liquid crystal display device comprises LCD panel and is used to drive the driving circuit of LCD panel, on LCD panel, with matrix arrangement liquid crystal cells arranged.Fig. 1 is the exploded perspective planimetric map of the LCD panel of expression prior art.As shown in Figure 1, this LCD panel comprises thin film transistor base plate 70 and filter substrate 80, and they link together mutually with facing, are provided with liquid crystal molecule 90 therebetween.
Thin film transistor base plate 70 comprises: cross one another select lines 71 and data line 72; Be formed on the thin film transistor (TFT) 73 of select lines 71 and data line 72 mutual infalls; The pixel electrode 74 that links to each other with described thin film transistor (TFT) 73; And the following alignment film (not shown) that is used for orientation liquid crystal molecule 90 on the pixel electrode 74.
Thin film transistor (TFT) 73 comprises: the semiconductor layer (not shown) that forms raceway groove; The source electrode (not shown) that links to each other with described data line 72; And towards described source electrode, and has the drain electrode (not shown) of described raceway groove between the source electrode.Herein, semiconductor layer comprises: the active layer (not shown), and it has formed the raceway groove between described source electrode and the described drain electrode; And ohmic contact layer (not shown), it is positioned on the described active layer, provide Ohmic contact between described source electrode and the described active layer in order to a end, and provide Ohmic contact between described active layer and the described drain electrode at the other end of described active layer at active layer.
Filter substrate 80 comprises: black matrix 81 is used to prevent light leak; Color filter 82 is used to realize color; Public electrode 83 is used for forming vertical electric field with pixel electrode 74; And the last alignment film 84 on the described public electrode 83, be used for the described liquid crystal molecule 90 of orientation.Described alignment film 84 is used for the direction of initial appointment the liquid crystal molecule 90 that is arranged between thin film transistor base plate 70 and the filter substrate 80 being carried out orientation.Form orientation groove (not shown) by friction process in alignment film 84, liquid crystal molecule is along the arrangement of embarking on journey of described orientation groove, wherein, uses organic membrane such as polyimide as alignment film.
A plurality of composition technologies of use that can be by relating to mask form select lines, data line and active layer on thin film transistor base plate.In addition, can utilize a plurality of composition technologies of the use that relates to mask on filter substrate, to form black matrix and color filter.This composition technology comprises a plurality of technologies, for example thin-film deposition, cleaning, photoetching, etching, photoresist removal etc.Therefore use the composition technology of mask to have the high problem of manufacturing cost owing to it is complicated.In order to address this problem, developed the lithography (off-setprinting method) of pattern transfer on thin film transistor base plate or the filter substrate, in the method, utilize printed board to come printed patterns.By also solidifying photoresist partly subsequently and in printed board, form pattern at distribution photoresist in the printed board with cylinder.
Fig. 2 A shows manufacturing process stage of printed board to Fig. 2 H, forms the fine pattern of the isotropic etching of prior art in this printed board.After this, to 2H, describe the lithography that utilizes prior art forms fine pattern on substrate method with reference to Fig. 2 A in detail.At first, shown in Fig. 2 A,, in printed board 11, form conductive layer 12 by deposition technology (as sputter) etc.The conductive layer 12 that forms in the printed board 11 is formed by the combination (for example chromium Cr, molybdenum MO, copper Cu and ITO) of conducting metal or conducting metal.
Subsequently, shown in Fig. 2 B, by on conductive metal layer 12, scattering photoresist 20 and use mask to utilize ultraviolet light polymerization photoresist 20 to expose and developing process, thereby on conductive metal layer 12, form meticulous photoresist pattern.
After as mentioned above photoresist 20 having been carried out exposure and developing process, shown in Fig. 2 C, in printed board 11, form the photoresist pattern 20A that exposes conductive metal layer 12 by removing being exposed part of photoresist 20.
Shown in Fig. 2 D, on the conductive metal layer 12 that is exposed by photoresist pattern 20A, carry out etch process.
After etch process, remove the whole photoresist pattern 20A that on etched conductive metal layer 12, form.Therefore, shown in Fig. 2 E, formed the metal pattern 12A that is used as resist layer when in printed board 11, forming fine pattern.
In printed board 11, form after the metal pattern 12A, use the metal pattern that is formed in the printed board 11, etch process is carried out in the zone of exposing of printed board 11, shown in Fig. 2 F as resist layer.
Owing on zone, carry out etch process by the printed board 11 of exposing as the metal pattern 12A of resist layer, thus shown in Fig. 2 G, printed board 11 in level and vertical direction while etching the zone of printed board 11.
In etching after the printed board 11, remove in printed board 11 metal pattern 12A by another etch process as resist layer.Shown in Fig. 2 H, the pattern 11A that printed board is advanced in etching is D in the vertical direction degree of depth, and this depth D equals the pattern width W of horizontal direction.
Form in printed board 11 under the situation of pattern in the method by above-mentioned prior art, shown in Fig. 2 G, owing to carry out etch process by the metal pattern 12A as resist layer, printed board 11 is in level and the isotropically etching of vertical both direction quilt.Thereby, be difficult to form the fine pattern 11A of pattern width less than depth of pattern.
Summary of the invention
Thereby the present invention is intended to a kind of method of using the printed board of the fine pattern that the electric field manufacturing has anisotropic etching, and it has eliminated one or more problem that produces owing to the limitation of prior art and shortcoming substantially.
Thereby, the purpose of this invention is to provide a kind of method of making printed board, in order to accurately to form meticulous pattern.
Additional features of the present invention and advantage will be illustrated in the explanation of back, and be partly apparent in explanation, or can acquistion in to practice of the present invention.By the structure of in the instructions of being write and claims and accompanying drawing, specifically noting, can realize and obtain purpose of the present invention and other advantages.
In order to realize these and other purposes of the present invention, a kind of manufacture method of printed board comprises: the upper surface in printed board forms first conductive layer; On the lower surface of described printed board, form second conductive layer; Part by described first conductive layer of etching forms corrosion-resisting pattern; Described printed board, second conductive layer and corrosion-resisting pattern are immersed in the electrolytic solution; And apply electric field between the described corrosion-resisting pattern and second conductive layer, thereby described electrolytic solution dissociates and form pattern in described printed board.
On the other hand, a kind of manufacture method of printed board comprises: the upper surface in printed board forms the first metal layer; Lower surface in described printed board forms second metal level; Part by the described the first metal layer of etching forms metal pattern, to expose the zone of described printed board; Described printed board, second metal level and metal pattern are immersed in the electrolytic solution; And come the zone of exposing of the described printed board of etching, thereby in described printed board, form pattern with the electric field between the described metal pattern and second metal level.
Aspect another, a kind of manufacture method of printed board comprises: form first conductive layer on the upper surface of printed board; Lower surface in described printed board forms second conductive layer; Part by described first conductive layer of etching forms corrosion-resisting pattern, to expose the zone of printed board; Described printed board, second conductive layer and corrosion-resisting pattern are immersed in the electrolytic solution; And between the described corrosion-resisting pattern and second conductive layer, apply electric field, thus in described printed board, forming pattern, the degree of depth of described pattern is greater than the width of described pattern.
Should be appreciated that the detailed description of the bright in general and back of front all is exemplary and indicative, being intended to provides further explanation to the present invention for required protection.
Description of drawings
Included accompanying drawing is used for further understanding the present invention, and it is merged in and has constituted the part of this instructions, shows embodiments of the invention, and is used from instructions one and explains principle of the present invention.In the accompanying drawings:
Fig. 1 is the exploded perspective planimetric map of the LCD panel of expression prior art;
Fig. 2 A shows manufacturing process stage of printed board to Fig. 2 H, forms the fine pattern of the isotropic etching of prior art in this printed board;
Fig. 3 wherein uses electric field to form the sectional view of printed board of the fine pattern of anisotropic etching according to the embodiment of the invention; And
Fig. 4 A shows according to the embodiment of the invention to Fig. 4 H and uses electric field to form the manufacturing process stage of the printed board of the pattern that has anisotropic etching.
Embodiment
Describe the preferred embodiments of the present invention now in detail, its example is shown in the drawings.
Fig. 3 wherein uses electric field to form the sectional view of printed board of the fine pattern of anisotropic etching according to the embodiment of the invention.With reference to Fig. 3, the fine pattern 110A in the printed board 110 is more more etched than horizontal direction in vertical direction.Thereby the pattern width W ' of fine pattern 110A is less than the depth D of fine pattern 110A '.Fig. 4 A shows according to the embodiment of the invention to 4H and uses electric field to form the manufacturing process stage of the printed board of the pattern that has anisotropic etching.After this, to the manufacturing process that Fig. 4 H illustrates printed board, wherein use anisotropically etching fine pattern of electric field with reference to Fig. 4 A.
At first, shown in Fig. 4 A, by sedimentation (such as sputter or plasma-reinforced chemical vapor deposition (PECVD)) deposit conductive layer 120 and 130 on the upper surface of printed board 110 and lower surface.Printed board 110 can be a glass.Being deposited on the upper surface of printed board 110 and the conductive layer on the lower surface 120 and 130 is formed by metal or metallic combination (for example chromium Cr, molybdenum MO, copper Cu and ITO) that can electrolysis in hydrofluoric acid solution.
On the upper surface of printed board 110 and lower surface, formed in hydrofluoric acid solution not can the conductive layer 120 and 130 of electrolysis after, on whole conductive layer 120 and 130, scatter photoresist 210 and 220 respectively.
After on the upper surface of printed board 110 and the conductive layer on the lower surface 120 and 130, having scattered photoresist 210 and 220, shown in Fig. 4 C, use mask on photoresist 210, to expose and developing process, thereby form the photoresist pattern 210A in the zone of exposing the conductive layer 120 on the upper surface that is formed at printed board 110.
Shown in Fig. 4 D, on conductive layer 120, form after the photoresist 210A, on the zone of being exposed of conductive layer 120, to carry out etch process, thereby form metal pattern 120A by photoresist pattern 210A, it is as the resist layer of printed board 110.Be formed on metal pattern 120A on the upper surface of printed board 110 not only as resist layer, and can be used as electrode, the conductive layer 130 that is used as another electrode on the lower surface that is formed on printed board 110 receives the electric power from external source.In addition, at the photoresist 210A on the metal pattern 120A on the upper surface that is formed on printed board 110 be formed on photoresist 220 on the conductive layer 130 on the lower surface of printed board 110 and can be used for concentrating on the vertical direction by metal pattern 120A and be formed on the electric field of the printed board 110 between the conductive layer 130 on the lower surface of printed board 110.
After forming metal pattern 120A, at the photoresist on the lower surface that is formed on printed board 110 220 be formed on the photoresist 210A on the upper surface of printed board 110 and carry out masking process, thereby form contact hole zone A, shown in Fig. 4 E.Contact hole zone A is used for applying the electric power that provides from the outside in the printed board 110 between metal pattern 120A and the conductive layer 130.
After having formed the contact hole zone A that is used to receive external power, shown in Fig. 4 F, when printed board 110 is dipped in the electrolytic solution, electric power is offered the conductive layer 130 and the metal pattern 120A of opening by being formed on contact hole zone A among photoresist 220 and the photoresist 210A.At this moment, external power is provided as: (-) electromotive force offers the metal pattern 120A on the upper surface of printed board 110, and (+) electromotive force offers the conductive layer 130 on the lower surface of printed board 110.The solution that printed board 110 is immersed can be such as HF, NH
4The solution of F or KF, it can form fluorine (F) ion that can melt glass ingredient.
When applying electric power under the situation about immersing in the solution in printed board 110, the H that dissociates in the solution
+Ion and the metal pattern 120A reaction that is formed on the upper surface of printed board 110 generate hydrogen H
2, and the F that dissociates in the solution
-Ion moves to the conductive metal layer 130 on the lower surface that is formed on printed board 110, is used in the vertical direction etching printed board 110 that matches with electric field.The chemical formula of expression said process illustrates as follows:
Chemical formula
4F
-+4H
++SiO
2→SiF
4+2H
2O
This moment, the metal pattern 120A that is formed on the upper surface of printed board 110 releases or resists the F that dissociates in the solution owing to (-) electromotive force
-Ion, and on the contrary is formed on conductive layer 130 on the lower surface of printed board 110 and attracts the F that dissociates in the solution owing to (+) electromotive force
-Ion.Thereby the F that dissociates in the solution
-The vertical direction of the printed board 110 of ion between metal pattern 120A and conductive layer 130 rather than the horizontal direction of printed board 110 are carried out more etching.Thereby, shown in Fig. 4 G, in printed board 110, formed vertical direction than anisotropic etching in the horizontal direction the fine pattern 110A of Duoing.
At anisotropic etching after the fine pattern 110A, remove photoresist 220 and the photoresist pattern 210A that is formed on metal pattern 120A and the conductive layer 130 by stripping technology.Subsequently, shown in Fig. 4 H, etching metal pattern 120A and conductive layer 130 to be to finish printed board 110, and wherein fine pattern 110A gets more at vertical direction W ' than D ' anisotropic etching in the horizontal direction.
As implied above, use in the printed board of electric field in being dipped into electrolytic solution according to the manufacture method of the printed board of the embodiment of the invention and to carry out etch process, thus anisotropically this printed board of etching, to form depth D ' than the big fine pattern of width W '.
For a person skilled in the art, apparently, can carry out various modifications and variations and can not break away from the spirit and scope of the present invention.Thereby the present invention is intended to cover these modifications of the present invention and modification, as long as they fall in the scope of appended claim and their equivalent.
The application requires the right of priority of the korean patent application P2005-0133600 of submission on Dec 29th, 2005, incorporates the full content of this application by reference into.
Claims (20)
1, a kind of manufacture method of printed board comprises:
On the upper surface of printed board, form first conductive layer;
On the lower surface of described printed board, form second conductive layer;
Part by described first conductive layer of etching forms corrosion-resisting pattern;
Described printed board, second conductive layer and corrosion-resisting pattern are immersed in the electrolytic solution; And
Between the described corrosion-resisting pattern and second conductive layer, apply electric field, thereby described electrolytic solution dissociates and form pattern in described printed board.
2, manufacture method according to claim 1 also comprises:
On described first conductive layer, form first photoresist layer;
On described second conductive layer, form second photoresist layer;
By the part of described first photoresist layer of etching,, form the photoresist pattern in described first photoresist layer, to form opening.
3, manufacture method according to claim 2, wherein, described photoresist pattern and described second photoresist make by the electric field on the vertical direction of the printed board between described corrosion-resisting pattern and described second conductive layer and concentrate.
4, manufacture method according to claim 2 also comprises:
In described photoresist pattern He in described second photoresist, form contact hole, between described corrosion-resisting pattern and described second conductive layer, to apply electric field.
5, manufacture method according to claim 1, wherein, the pattern in the described printed board is formed the fine pattern with anisotropic etching.
6, manufacture method according to claim 1 wherein, applies electric field and comprises between described corrosion-resisting pattern and described second conductive layer:
Apply negative potential to described corrosion-resisting pattern; And
Apply positive potential to described second conductive layer.
7, manufacture method according to claim 1, wherein, described first and second conductive layers comprise one of Cr, Mo, Cu and ITO.
8, manufacture method according to claim 1, wherein, described electrolytic solution comprise can etching glass fluorine (F) ion.
9, manufacture method according to claim 1, wherein, described electrolytic solution comprises HF, NH
4A kind of among F and the KF.
10, manufacture method according to claim 1, wherein, described printed board is a glass.
11, a kind of manufacture method of printed board comprises:
On the upper surface of printed board, form the first metal layer;
On the lower surface of described printed board, form second metal level;
Part by the described the first metal layer of etching forms metal pattern, to expose the zone of described printed board;
Described printed board, second metal level and metal pattern are immersed in the electrolytic solution; And
Come the zone of exposing of the described printed board of etching with the electric field between the described metal pattern and second metal level, thereby in described printed board, form pattern.
12, manufacture method according to claim 11 also comprises:
On described the first metal layer, form first photoresist layer;
On described second metal level, form second photoresist layer; And
By the part of described first photoresist layer of etching,, form the photoresist pattern in described first photoresist layer, to form opening.
13, manufacture method according to claim 12, wherein, described photoresist pattern and described second photoresist make by the electric field on the vertical direction of the printed board between described metal pattern and described second metal level and concentrate.
14, manufacture method according to claim 12 also comprises:
In described photoresist pattern and in described second photoresist layer, form contact hole, between described metal pattern and described second metal level, to apply electric field.
15, manufacture method according to claim 11, wherein, the pattern in the described printed board is formed the fine pattern with anisotropic etching.
16, manufacture method according to claim 11, wherein, the zone of exposing of the described printed board of etching comprises:
Apply negative potential to described metal pattern; And
Apply positive potential to described second metal level.
17, manufacture method according to claim 11, wherein, described first and second metal levels comprise one of Cr, Mo, Cu and ITO.
18, manufacture method according to claim 11, wherein, described electrolytic solution comprise can etching glass fluorine (F) ion.
19, manufacture method according to claim 11, wherein, described electrolytic solution comprises HF, NH
4A kind of among F and the KF.
20, a kind of manufacture method of printed board comprises:
On the upper surface of printed board, form first conductive layer;
On the lower surface of described printed board, form second conductive layer;
Part by described first conductive layer of etching forms corrosion-resisting pattern, to expose the zone of described printed board;
Described printed board, second conductive layer and corrosion-resisting pattern are immersed in the electrolytic solution; And
Apply electric field between the described corrosion-resisting pattern and second conductive layer, thereby form pattern in described printed board, the degree of depth of described pattern is greater than the width of described pattern.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2005-0133600 | 2005-12-29 | ||
| KR1020050133600 | 2005-12-29 | ||
| KR1020050133600A KR101211293B1 (en) | 2005-12-29 | 2005-12-29 | Method for fabricating machine plate with a fine pattern using electrical field |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1991588A true CN1991588A (en) | 2007-07-04 |
| CN1991588B CN1991588B (en) | 2010-05-12 |
Family
ID=38213921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100801838A Expired - Fee Related CN1991588B (en) | 2005-12-29 | 2006-05-10 | Method for fabricating printing plate with fine pattern using electric field |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7687226B2 (en) |
| KR (1) | KR101211293B1 (en) |
| CN (1) | CN1991588B (en) |
| FR (1) | FR2895698B1 (en) |
| TW (1) | TWI324900B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101750903B (en) * | 2008-12-15 | 2013-01-02 | 中芯国际集成电路制造(上海)有限公司 | Photolithography |
| CN103422153A (en) * | 2013-08-22 | 2013-12-04 | 大连七色光太阳能科技开发有限公司 | Method for etching FTO (fluorine-doped tin oxide) conductive thin film |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100126367A1 (en) * | 2007-09-21 | 2010-05-27 | Ji-Su Kim | Method for etching glass or metal substrates using negative photoresist and method for fabricating cliche using the same |
| TW200941322A (en) * | 2008-03-28 | 2009-10-01 | Tpk Touch Solutions Inc | Manufacturing method for conducting films on two surfaces of transparent substrate of touch-control circuit |
| KR101684578B1 (en) * | 2013-07-11 | 2016-12-08 | 서울대학교산학협력단 | Method for forming a pattern, and catalyst and electronic device using the method |
| CN106739427A (en) * | 2016-12-02 | 2017-05-31 | 成都印钞有限公司 | A kind of technique for etching silver-colored version for the etchant solution of silverware and using the etchant solution |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3293156A (en) * | 1963-06-25 | 1966-12-20 | Beck Engraving Company Inc | Method and apparatus for plating etched half-tone printing plates |
| EP0250154A3 (en) * | 1986-06-18 | 1989-07-12 | Minnesota Mining And Manufacturing Company | Photographic element on a polymeric substrate with novel subbing layer |
| US5558977A (en) * | 1995-12-22 | 1996-09-24 | Eastman Kodak Company | Imaging element comprising a transparent magnetic layer and a transparent electrically-conductive layer |
| JP3620223B2 (en) * | 1997-07-07 | 2005-02-16 | 富士ゼロックス株式会社 | Image recording method and image recording apparatus |
| JP4048133B2 (en) * | 2003-02-21 | 2008-02-13 | 富士フイルム株式会社 | Photosensitive composition and planographic printing plate precursor using the same |
| US7169313B2 (en) * | 2005-05-13 | 2007-01-30 | Endicott Interconnect Technologies, Inc. | Plating method for circuitized substrates |
-
2005
- 2005-12-29 KR KR1020050133600A patent/KR101211293B1/en active IP Right Grant
-
2006
- 2006-05-02 US US11/415,280 patent/US7687226B2/en not_active Expired - Fee Related
- 2006-05-10 CN CN2006100801838A patent/CN1991588B/en not_active Expired - Fee Related
- 2006-05-11 TW TW095116725A patent/TWI324900B/en not_active IP Right Cessation
- 2006-06-02 FR FR0604950A patent/FR2895698B1/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101750903B (en) * | 2008-12-15 | 2013-01-02 | 中芯国际集成电路制造(上海)有限公司 | Photolithography |
| CN103422153A (en) * | 2013-08-22 | 2013-12-04 | 大连七色光太阳能科技开发有限公司 | Method for etching FTO (fluorine-doped tin oxide) conductive thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| US20070154842A1 (en) | 2007-07-05 |
| FR2895698B1 (en) | 2013-11-15 |
| TW200726357A (en) | 2007-07-01 |
| KR101211293B1 (en) | 2012-12-11 |
| FR2895698A1 (en) | 2007-07-06 |
| CN1991588B (en) | 2010-05-12 |
| TWI324900B (en) | 2010-05-11 |
| US7687226B2 (en) | 2010-03-30 |
| KR20070070753A (en) | 2007-07-04 |
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