CN1988187B - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN1988187B CN1988187B CN2005101212446A CN200510121244A CN1988187B CN 1988187 B CN1988187 B CN 1988187B CN 2005101212446 A CN2005101212446 A CN 2005101212446A CN 200510121244 A CN200510121244 A CN 200510121244A CN 1988187 B CN1988187 B CN 1988187B
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- germanium
- nanopoint
- silicon carbide
- nano dot
- light
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Abstract
An LED includes a transparent base board, an anode, an insulation layer, a light emission layer and a cathode, in which, said anode is formed on said transparent base board, said insulation layer is formed on said anode, said light emission layer is formed on said insulation layer, said cathode is formed on said insulation layer and said light emission layer includes multiple silicon carbide nano points or multiple silicon carbide alloy nano points or multiple germanium carbide nano points or multiple germanium carbide alloy nano points or multiple germanium silicide nano points or multiple germanium silicide alloy nano points or multiple silicon germanium carbide alloy nano points.
Description
[technical field]
The invention relates to a kind of light-emitting diode.
[background technology]
Opto-electronics is flourishing in recent years, light-emitting diode (Light Emitting Diode, LED) because have that volume is little, energy consumption is low, high brightness, the life-span is long and luminous advantage such as stable, be widely used in display unit and the light read-write equipment.
In the making of light-emitting diode, because compound semiconductor is direct gap semiconductor (Direct Semiconductor), have preferable luminous efficiency, therefore main at present is main with compound semiconductor still.But obviously (Ge) cost is high for C, Si, so how industry all utilizes IV family semiconductor fabrication light-emitting diode in research than IV family semiconductor for compound semiconductor.IV family semiconductor is a non-direct gap semiconductor (IndirectSemiconductor); On luminescence theory owing to be difficult for to observe the law of conservation of momentum; Therefore luminous efficiency is not high; With silicon (Si) or germanium (Ge), the light that its electron-hole recombinations (Electron-holeRecombination) is produced is that infrared ray and efficient are not good.On IV family semiconductor visible light light-emitting diode was made, (SiliconCarbon, SiC) thin-film led, it has higher energy gap, and (Energy Bandgap, Eg), its energy gap was approximately 3eV to the successful at present carborundum that blue light-emitting is arranged.
Seeing also Fig. 1, is a kind of light-emitting diode structure sketch map of prior art.This light-emitting diode 1 comprises that p type carborundum (p-SiC) substrate 11, is formed on n type silicon carbide layer 12, on this p type silicon carbide substrates 11 and is formed on the p type Ohmic electrode 15, that n type aln layer (n-AlN) 13, on this n type silicon carbide layer 12 is formed on these p type silicon carbide substrates 11 bottoms and is formed on the n type Ohmic electrode 16 on this n type aln layer 13.
Seeing also Fig. 2, is that light-emitting diode shown in Figure 1 can be with sketch map when not applying bias voltage.There are a plurality of holes 111 in the valence band 131 of this p type silicon carbide substrates 11; There are a plurality of electronics 122 in the conduction band 132 of this n type silicon carbide layer 12 and this n type aln layer 13; Because the existence at the interface of this p type silicon carbide substrates 11 and this n type silicon carbide layer 12 can be with difference (Bandgap Offset); A plurality of holes 111 can't be to valence band 131 migrations of this n type silicon carbide layer 12 in the valence band 131 of this p type silicon carbide substrates 11; Simultaneously, a plurality of electronics 122 also can't be to 132 migrations of the conduction band of this p type silicon carbide substrates 11 in the conduction band 132 of this n type silicon carbide layer 12, this a plurality of empty 111 with these a plurality of electronics 122 can compound (Recombination).
Seeing also Fig. 3, is that light-emitting diode shown in Figure 1 can be with sketch map when applying forward bias.When applying forward bias, the difference of being with that exists at the interface of this p type silicon carbide substrates 11 and this n type silicon carbide layer 12 reduces.A plurality of holes 111 are to valence band 131 migrations of this n type silicon carbide layer 12 in the valence band 131 of this p type silicon carbide substrates 11, and simultaneously, a plurality of electronics 122 are to conduction band 132 migrations of this p type silicon carbide substrates 11 in the conduction band 132 of this n type silicon carbide layer 12.Electronics 122 in the conduction band 132 of this n type silicon carbide layer 12 is compound with the sky 111 in the valence band 131 that gets into this n type silicon carbide layer 12, launches photon simultaneously, and the wavelength of the corresponding light wave of light emitted son is determined by following formula:
λ＝1240/Eg(nm)
λ is an optical wavelength in the formula, and Eg is the energy gap of semi-conducting material.The energy gap of this n type silicon carbide layer 12 is approximately 3.0eV, and the light emitted wave-wave of this light-emitting diode is long to be 470nm, i.e. blue light.
But carborundum is non-direct gap semiconductor (Indirect Semiconductor), so this lumination of light emitting diode efficient is not high.Simultaneously, aluminium nitride is the III-V compounds of group, and cost is higher.
[summary of the invention]
In order to overcome the not high and cost problem of higher of lumination of light emitting diode efficient in the prior art, the present invention provides a kind of high-luminous-efficiency and low-cost light-emitting diode.
A kind of light-emitting diode, it comprises: a transparency carrier, an anode electrode, an insulating barrier, a luminescent layer, a cathode electrode.This anode electrode is formed on this transparency carrier, and this insulating barrier is formed on this anode electrode, and this luminescent layer is formed in this insulating barrier, and this cathode electrode is formed on this insulating barrier.This luminescent layer comprises a plurality of nanometer silicon carbide points or a plurality of silicon carbide alloys nano dot or a plurality of carbonization germanium nanopoint or a plurality of carbonization germanium alloy nano dot or a plurality of germanium silicide nano dot or a plurality of germanium silicide alloy nano point or a plurality of carborundum germanium alloy nano dot; Wherein, this silicon carbide alloys nano dot is mixed by silicon nano dots and carbon nano dot, or is mixed by nanometer silicon carbide point and silicon nano dots; This carbonization germanium alloy nano dot is mixed by germanium nanopoint and carbon nano dot, or is mixed by carbonization germanium nanopoint and germanium nanopoint; This germanium silicide alloy nano point is mixed by germanium silicide nano dot and silicon nano dots, or is mixed by germanium silicide nano dot and germanium nanopoint, or is mixed by silicon nano dots and germanium nanopoint; This carborundum germanium alloy nano dot is mixed by silicon nano dots and carbonization germanium nanopoint; Or mix by silicon nano dots and carbonization germanium silicon nano dots; Or mix by germanium silicide nano dot and nanometer silicon carbide point, or mix by germanium silicide nano dot and carbonization germanium nanopoint, or mix by germanium silicide nano dot and carborundum germanium nanopoint; Or mix by nanometer silicon carbide point and carbonization germanium nanopoint; Or mix by nanometer silicon carbide point and carborundum germanium nanopoint, or mix by germanium nanopoint and nanometer silicon carbide point, or mix by germanium nanopoint and carborundum germanium nanopoint; Or mix, or mix by carbon nano dot, germanium nanopoint and silicon nano dots by carbonization germanium nanopoint and carborundum germanium nanopoint.
Compare with prior art, the luminescent layer of light-emitting diode of the present invention comprises a plurality of IV family semiconductor nano point, and its quantum effect is obvious, and luminous efficiency is high.Simultaneously, this luminescent layer material cost is lower.
[description of drawings]
Fig. 1 is a kind of light-emitting diode structure sketch map of prior art.
Fig. 2 is that light-emitting diode shown in Figure 1 can be with sketch map when not applying bias voltage.
Fig. 3 is that light-emitting diode shown in Figure 1 can be with sketch map when applying forward bias.
Fig. 4 is the structural representation of first execution mode of light-emitting diode of the present invention.
Fig. 5 be light-emitting diode shown in Figure 4 can be with sketch map.
Fig. 6 is the structural representation of second execution mode of light-emitting diode of the present invention.
Fig. 7 is the structural representation of the 3rd execution mode of light-emitting diode of the present invention.
Fig. 8 is the structural representation of the 4th execution mode of light-emitting diode of the present invention.
Fig. 9 is the structural representation of the 5th execution mode of light-emitting diode of the present invention.
[embodiment]
Seeing also Fig. 4, is the structural representation of first execution mode of light-emitting diode of the present invention.This light-emitting diode 2 comprises that a transparency carrier 21, is formed on anode electrode 22, on this transparency carrier 21 and is formed on the luminescent layer 24, that the insulating barrier 23, on this anode electrode 22 is formed in this insulating barrier 23 and is formed on the cathode electrode 25 on this insulating barrier 23.Wherein, this insulating barrier 23 is divided into one first insulating barrier 23a and one second insulating barrier 23b, and this luminescent layer position at this first insulating barrier 23a and this second insulating barrier 23b at the interface.This transparency carrier 21 is glass or resin.This anode electrode 22 has the corresponding anode electrode pattern according to luminous situation; This anode electrode 22 has higher work function (Work Function); For example tin indium oxide (Indium Tin Oxide, ITO) or indium zinc oxide (Indium ZincOxide, IZO) etc.The energy gap of this insulating barrier 23 is greater than the energy gap of this luminescent layer and less than 6eV, and its material is silicon nitride (Si3N4), fire sand (SiCN), silicon oxynitride (SiON), nitrogen siloxicon (SiCON) etc., and the thickness of this insulating barrier 23 is 60nm to 150nm.This luminescent layer 24 comprises a plurality of carborundum (Si
xC
1-x, 0＜x＜1) and nano dot, this nanometer silicon carbide spot diameter is 5nm to 50nm.This cathode electrode 25 has corresponding cathode electrode pattern according to luminous situation, and this cathode electrode 25 has higher work function (Work Function), for example alloy of the alloy of lithium fluoride and aluminium, barium, calcium and aluminium etc.
See also Fig. 5, be light-emitting diode shown in Figure 4 can be with sketch map.There are a plurality of electronics 260 in the conduction band 26 of this nanometer silicon carbide point 24, have a plurality of holes 270 in its valence band 27.When this light-emitting diode 2 does not apply bias voltage; Because carborundum belongs to non-direct gap semiconductor; Electronics in its conduction band and the hole in the valence band are difficult for observing the law of conservation of momentum; Therefore should a plurality of electronics 260 be difficult for compoundly with this a plurality of holes 270, the quantity in these a plurality of electronics 260 and these a plurality of holes 270 be very little again, so both are very difficult compound.When applying forward bias; Under extraneous effect of electric field; The hole 270 of this anode electrode 22 is moved in the valence band 27 of this first insulating barrier 23a and is got in the valence band 27 of this nanometer silicon carbide point 24; Simultaneously, the electronics 260 of this cathode electrode 25 moves in the conduction band 26 of this second insulating barrier 23b and gets in the conduction band 26 of this nanometer silicon carbide point 24.This first, second insulating barrier 23a, 23b and this nanometer silicon carbide point 24 can be with difference (Bandgap Offset) bigger, get into the valence band 27 of this nanometer silicon carbide point 24 and can be limited in this nanometer silicon carbide point 24 with a plurality of electronics 260 with a plurality of holes 270 in the conduction band 26.When the material yardstick became one dimension (1D) quantum wire (QuantumWire) or zero dimension (0D) quantum dot (Quantum Dot) by two dimension (2D) quantum well (Quantum Well) micro, quantum effect just can display.Can know that by quantum confinement effect these a plurality of holes 270 all are restricted with the motion of a plurality of electronics 260 on three-dimensional.Can know by uncertainty principle; When the amount of variability of these a plurality of holes 270 and a plurality of electronics 260 yardsticks more hour; The not accuracy of its momentum will be big more; Its probability of observing the law of conservation of momentum also can be big more, and these a plurality of holes 270 also can be big more with a plurality of electronics 260 compound probability, and therefore luminous efficiency is improved.The wavelength of the corresponding light wave of light emitted son is still by following formula decision:
λ＝1240/Eg(nm)
Can know by following formula, when energy gap changes, the also corresponding change of the wavelength of light emitted ripple.Carbon, siliceous amount percentage can change the energy gap size of this nanometer silicon carbide point 24 in this nanometer silicon carbide point 24 of modulation, thereby make this light-emitting diode 2 launch the light wave of different wave length.
This luminescent layer 24 also can be made up of a plurality of silicon carbide alloys nano dots.This silicon carbide alloys nano dot is mixed by silicon nano dots and carbon nano dot, or is mixed by nanometer silicon carbide point and silicon nano dots.
When the mass percent of carbon in this nanometer silicon carbide point or this silicon carbide alloys nano dot greater than 70% the time, the light wave of these light-emitting diode 2 emissions be ultraviolet; When the mass percent of carbon in this nanometer silicon carbide point or this silicon carbide alloys nano dot greater than 15% and less than 70% the time, the light wave of these light-emitting diode 2 emissions is a visible light; When the mass percent of carbon in this nanometer silicon carbide point or this silicon carbide alloys nano dot less than 15% the time, the light wave of these light-emitting diode 2 emissions is an infrared ray.
Seeing also Fig. 6, is the structural representation of second execution mode of light-emitting diode of the present invention.The structure of this light-emitting diode 3 and light-emitting diode 2 shown in Figure 4 is roughly the same, and its difference is: the luminescent layer 34 of this light-emitting diode 3 is sandwich construction.
Seeing also Fig. 7, is the structural representation of the 3rd execution mode of light-emitting diode of the present invention.The structure of this light-emitting diode 4 and light-emitting diode 2 shown in Figure 4 is roughly the same, and its difference is: this luminescent layer 44 comprises a plurality of carbonization germanium (Ge
xC
1-x, 0＜x＜1) and nano dot or carbonization germanium alloy nano dot.This carbonization germanium alloy nano dot is mixed by germanium nanopoint and carbon nano dot, or is mixed by carbonization germanium nanopoint and germanium nanopoint.
When the mass percent of carbon in this carbonization germanium nanopoint or this carbonization germanium alloy nano dot greater than 72% the time, the light wave of these light-emitting diode 4 emissions be ultraviolet.When the mass percent of carbon in this carbonization germanium nanopoint or this carbonization germanium alloy nano dot greater than 23% and less than 72% the time, the light wave of these light-emitting diode 4 emissions is a visible light.When the mass percent of carbon in this carbonization germanium nanopoint or this carbonization germanium alloy nano dot less than 23% the time, the light wave of these light-emitting diode 4 emissions is an infrared ray.
Seeing also Fig. 8, is the structural representation of the 4th execution mode of light-emitting diode of the present invention.The structure of this light-emitting diode 5 and light-emitting diode 2 shown in Figure 4 is roughly the same, and its difference is: this luminescent layer 54 comprises a plurality of germanium silicide (Si
xGe
1-x, 0＜x＜1) and nano dot or germanium silicide alloy nano point.This germanium silicide alloy nano point is mixed by germanium silicide nano dot and silicon nano dots, or is mixed by germanium silicide nano dot and germanium nanopoint, or is mixed by silicon nano dots and germanium nanopoint.The light wave of these light-emitting diode 5 emissions is an infrared ray.During this germanium silicide nano dot or germanium silicide alloy nano point small-sized; Its quantum effect is obvious, and its energy gap can become greatly, and the probability of these light-emitting diode 5 visible emitting also can increase; When the size micro arrived to a certain degree, the light wave of these light-emitting diode 5 emissions was a visible light.
Seeing also Fig. 9, is the structural representation of the 5th execution mode of light-emitting diode of the present invention.The structure of this light-emitting diode 6 and light-emitting diode 2 shown in Figure 4 is roughly the same, and its difference is: this luminescent layer 64 comprises a plurality of carbonization SiGe (Si
xGe
yC
1-x-y, 0＜x＜1,0＜y＜1) and the alloy nano point.This carborundum germanium alloy nano dot is mixed by silicon nano dots and carbonization germanium nanopoint; Or mix by silicon nano dots and carborundum germanium nanopoint; Or mix by germanium silicide nano dot and nanometer silicon carbide point, or mix by germanium silicide nano dot and carbonization germanium nanopoint, or mix by germanium silicide nano dot and carborundum germanium nanopoint; Or mix by nanometer silicon carbide point and carbonization germanium nanopoint; Or mix by nanometer silicon carbide point and carborundum germanium nanopoint, or mix by germanium nanopoint and nanometer silicon carbide point, or mix by germanium nanopoint and carborundum germanium nanopoint; Or mix, or mix by carbon nano dot, germanium nanopoint and silicon nano dots by carbonization germanium nanopoint and carborundum germanium nanopoint.
When the composition of carbon in the carborundum germanium alloy nano dot greater than 75% the time; This light-emitting diode 6 is launched light wave and is ultraviolet ray; When the mass percent of carbon in the carborundum germanium alloy nano dot greater than 32% and less than 75% the time; It is visible light that this light-emitting diode 6 is launched light wave, when the mass percent of carbon in the carborundum germanium alloy nano dot less than 32% the time, it is infrared ray that this light-emitting diode 6 is launched light wave.
The luminescent layer of light-emitting diode 2 of the present invention comprises a plurality of IV family semiconductor nano point, and its quantum effect is obvious, and luminous efficiency is high.Simultaneously, this luminescent layer material cost is lower.
Claims (7)
1. light-emitting diode; It comprises: a transparency carrier, an anode electrode, an insulating barrier, a luminescent layer, a cathode electrode; This anode electrode is formed on this transparency carrier; This insulating barrier is formed on this anode electrode, and this luminescent layer is formed in this insulating barrier, and this cathode electrode is formed on this insulating barrier; It is characterized in that: this luminescent layer is a sandwich construction, and this luminescent layer comprises a plurality of nanometer silicon carbide points or a plurality of silicon carbide alloys nano dot or a plurality of carbonization germanium nanopoint or a plurality of carbonization germanium alloy nano dot or a plurality of germanium silicide nano dot or a plurality of germanium silicide alloy nano point or a plurality of carborundum germanium alloy nano dot; Wherein, this silicon carbide alloys nano dot is mixed by silicon nano dots and carbon nano dot, or is mixed by nanometer silicon carbide point and silicon nano dots; This carbonization germanium alloy nano dot is mixed by germanium nanopoint and carbon nano dot, or is mixed by carbonization germanium nanopoint and germanium nanopoint; This germanium silicide alloy nano point is mixed by germanium silicide nano dot and silicon nano dots, or is mixed by germanium silicide nano dot and germanium nanopoint, or is mixed by silicon nano dots and germanium nanopoint; This carborundum germanium alloy nano dot is mixed by silicon nano dots and carbonization germanium nanopoint; Or mix by silicon nano dots and carbonization germanium silicon nano dots; Or mix by germanium silicide nano dot and nanometer silicon carbide point, or mix by germanium silicide nano dot and carbonization germanium nanopoint, or mix by germanium silicide nano dot and carborundum germanium nanopoint; Or mix by nanometer silicon carbide point and carbonization germanium nanopoint; Or mix by nanometer silicon carbide point and carborundum germanium nanopoint, or mix by germanium nanopoint and nanometer silicon carbide point, or mix by germanium nanopoint and carborundum germanium nanopoint; Or mix, or mix by carbon nano dot, germanium nanopoint and silicon nano dots by carbonization germanium nanopoint and carborundum germanium nanopoint.
2. light-emitting diode as claimed in claim 1 is characterized in that: the mass percent of carbon is greater than 70% in this nanometer silicon carbide point or this silicon carbide alloys nano dot; The mass percent of carbon is greater than 72% in this carbonization germanium nanopoint or this carbonization germanium alloy nano dot; The mass percent of carbon is greater than 75% in this carborundum germanium alloy nano dot.
3. light-emitting diode as claimed in claim 1 is characterized in that: the mass percent of carbon is greater than 15% and less than 70% in this nanometer silicon carbide point or this silicon carbide alloys nano dot; The mass percent of carbon is greater than 23% and less than 72% in this carbonization germanium nanopoint or this carbonization germanium alloy nano dot; The mass percent of carbon is greater than 32% and less than 75% in this carborundum germanium alloy nano dot.
4. light-emitting diode as claimed in claim 1 is characterized in that: the mass percent of carbon is less than 15% in this nanometer silicon carbide point or this silicon carbide alloys nano dot; The mass percent of carbon is less than 23% in this carbonization germanium nanopoint or this carbonization germanium alloy nano dot; The mass percent of carbon is less than 32% in this carborundum germanium alloy nano dot.
5. light-emitting diode as claimed in claim 1 is characterized in that: the diameter of this nanometer silicon carbide point is 5nm to 50nm.
6. light-emitting diode as claimed in claim 1 is characterized in that: the energy gap of this insulating barrier is greater than the energy gap of this luminescent layer and less than 6eV.
7. light-emitting diode as claimed in claim 1 is characterized in that: this anode electrode is tin indium oxide or indium zinc oxide; This cathode electrode is the alloy of barium or lithium fluoride and aluminium or the alloy of calcium and aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005101212446A CN1988187B (en) | 2005-12-23 | 2005-12-23 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005101212446A CN1988187B (en) | 2005-12-23 | 2005-12-23 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1988187A CN1988187A (en) | 2007-06-27 |
| CN1988187B true CN1988187B (en) | 2012-07-18 |
Family
ID=38184889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005101212446A Expired - Fee Related CN1988187B (en) | 2005-12-23 | 2005-12-23 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1988187B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102760804B (en) * | 2011-04-29 | 2015-01-21 | 清华大学 | Light-emitting diode |
-
2005
- 2005-12-23 CN CN2005101212446A patent/CN1988187B/en not_active Expired - Fee Related
Non-Patent Citations (5)
| Title |
|---|
| Liang-Yih Chen, et al..Visible electroluminescence from silicon nanocrystalsembedded in armorphous silicon nitride matrix,.《Appl. Phys. Lett.》.2005,第86卷193506-1/-3. * |
| Liang-YihChen et al..Visible electroluminescence from silicon nanocrystalsembedded in armorphous silicon nitride matrix |
| 刘技文等.SiC纳米晶薄膜的制备及发光性质研究.《光电子激光》.2005,第16卷(第3期),274-278. * |
| 秦捷,蒋最敏、王迅.自组织生长锗硅量子点及其特性.《物理》.1998,第27卷(第6期),365-370. * |
| 赵雷等.SiGeC三元合金的研究进展.《微纳电子技术》.2004,(第7期),1-10. * |
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| Publication number | Publication date |
|---|---|
| CN1988187A (en) | 2007-06-27 |
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