CN1987654A - Method for semi-penetration semi-reflection liquid crystal display - Google Patents
Method for semi-penetration semi-reflection liquid crystal display Download PDFInfo
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- CN1987654A CN1987654A CNA2005101212573A CN200510121257A CN1987654A CN 1987654 A CN1987654 A CN 1987654A CN A2005101212573 A CNA2005101212573 A CN A2005101212573A CN 200510121257 A CN200510121257 A CN 200510121257A CN 1987654 A CN1987654 A CN 1987654A
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Abstract
The LCD includes a base plate of containing a reflection area and a penetration area. The method includes steps: (1) forming a transparence electrode, a buffer layer, a reflection metal layer, and a photoresistive layer (PL) on surface of base plate in sequence; (2) the provided optical mask includes a first area (penetration area), and a second area (reflection area); and light transmittance in first area is larger than light transmittance of second area; (3) using the optical mask to expose and develop PL; making thickness of PL in reflection area larger than thickness of PL in penetration area; (4) incinerating PL in order to remove photoresistive in penetration area, and remove partial photoresistive in reflection area; (5) etching through buffer layer and reflection metal layer in the penetration area to expose the penetration electrode; removing remanent photoresistive to expose reflection metal layer, which is reflection electrode.
Description
[technical field]
The present invention relates to a kind of LCD manufacture method, refer to a kind of semi-penetration semi-reflection liquid crystal display (trans-reflective liquid crystal display, TR-LCD) manufacture method especially.
[background technology]
That LCD has is frivolous, power consumption is low and advantage such as digitizing, more and more is subjected to widespread use at present on market.LCD utilizes mode can be divided into penetration, reflective and Transflective according to light source.Semi-penetration semi-reflection liquid crystal display combines the characteristic of penetration and reflective liquid-crystal display, and it can be read down by sunlight out of doors, also can utilize backlight in the dark to use.Semi-penetration semi-reflection liquid crystal display is applied on the portable electronic product usually, and the environment of its use is unrestricted, thereby extensively is subjected to consume at present popular favorable comment.
For semi-penetration semi-reflection liquid crystal display, its brightness and visual angle all must be taken into account.In order to promote the brightness of echo area, industry utilization reflection projection (bump) is revised the reflection of incident light angle, with the efficient of increase reflected light utilization, thereby improves brightness.The reflection projection is generally turriform or has curved surfaces.
A kind of reflection bump manufacturing method with curved surfaces comprises the steps: to prepare a substrate; In this substrate, form a photoresist layer (photo-resist layer); Utilize a light shield that this photoresist layer is carried out multiexposure, multiple exposure (multi-step exposure) with single pattern; Develop (develop) to remove the photoresist layer of sensitization, make the photoresist layer of not sensitization be the staircase structure the end of to from high; At last, heating is flowed (reflow) photoresistance of staircase structure again, and forms the arcuation projection.In addition, possess reflectivity, also need form a reflection horizon thereon, thereby form reflection projection with curved surfaces for making this projection.
Only, this manufacture method needs the multiexposure, multiple exposure development step to make reflection projection and reflecting electrode, and manufacturing cost is higher.In addition, the characteristic of making the used organic polymer (organicpolymer) of reflection projection is complicated, has increased difficulty also for whole method for semi-penetration semi-reflection liquid crystal display.
[summary of the invention]
In order to solve prior art method for semi-penetration semi-reflection liquid crystal display cost problem of higher, be necessary to provide a kind of lower-cost method for semi-penetration semi-reflection liquid crystal display.
A kind of method for semi-penetration semi-reflection liquid crystal display, this semi-penetration semi-reflection liquid crystal display comprises a substrate, this substrate comprises an echo area and a penetrating region, and this manufacture method may further comprise the steps: form a transparent electrode layer, a cushion and a reflective metal layer successively at this substrate surface; At this reflective metal layer surface deposition one photoresist layer; One light shield is provided, and this light shield comprises a first area and a second area, and the transmittance of first area is greater than the transmittance of second area, and this first area is to should penetrating region, and this second area is to should the echo area; Utilize this light shield to this photoresist layer exposure, and the photoresist layer after the exposure is developed, make the thickness of this photoresist layer in this echo area greater than the thickness of this photoresist layer in this penetrating region; This photoresist layer of ashing, to remove the photoresistance of penetrating region, the echo area then remains partly photoresistance; The cushion of this penetrating region of etching and reflective metal layer expose the transparent electrode layer of penetrating region, are through electrode; Remove the residue photoresistance of echo area, expose the reflective metal layer of echo area, be reflecting electrode.
The light shield that above-mentioned method for semi-penetration semi-reflection liquid crystal display uses comprises two zones that transmittance is different, utilize this light shield the step of making reflecting electrode can be attached to the manufacture process of through electrode, just form through electrode and reflecting electrode in same process.This manufacture method only need be revised one light shield, increases a photoresistance ashing and etching step in addition again, just can produce through electrode and reflecting electrode, and production cost is lower.In addition, this manufacture method also need not the difficult organic polymer of grasping of operating characteristic, thereby simplifies technological process.
[description of drawings]
Fig. 1 to Fig. 9 is the synoptic diagram of method for semi-penetration semi-reflection liquid crystal display one each step of better embodiment of the present invention.
[embodiment]
Seeing also Fig. 1 to Fig. 9, is the step synoptic diagram of method for semi-penetration semi-reflection liquid crystal display one better embodiment of the present invention, and details are as follows for this manufacture method.
Step 1 as shown in Figure 1, provides a substrate 200, and this substrate 200 has been finished preceding four road lithography steps, forms grid, semiconductor active layer (active layer), source electrode and drain electrode.These substrate 200 definition at least one penetrating region 201, an echo area 202 and line areas 203.
Step 2 as shown in Figure 2, deposits a transparent electrode layer 210, a cushion 220 and a reflective metal layer 230 successively on this substrate 200.This transparent electrode layer 210 is tin indium oxide (indium tin oxide, ITO) or indium zinc oxide (indium zinc oxide, IZO), this reflective metal layer 230 be aluminium (aluminum, Al), silver (argentums, Ag) or the aluminium neodymium alloy, this cushion 220 be molybdenum (molybdenum, Mo) or titanium (titanium, Ti), it is used for this transparent electrode layer 210 and this reflective metal layer 230 at interval, prevents both face that connects generation electrochemical reactions.The deposition mode can adopt chemical vapor deposition (chemical vapordeposition, CVD) or physical vapour deposition (PVD) (physical vapor deposition, PVD).
Step 3 as shown in Figure 3, applies one deck photoresist layer 240 on this reflective metal layer 230.The mode that applies can adopt spin-coating method (spin coating) or spraying process (spaycoating).
Step 4 provides a light shield 300, and is placed on this photoresist layer 240.This light shield 300 comprises a light tight district 330, a photic zone 340 and a semi-opaque region 320, and this semi-opaque region 320 comprises the identical slit of a plurality of width 322.320 pairs of the semi-opaque region of this light shield 300 should substrate 200 penetrating region 201, the line areas 203 that 340 pairs of this photic zones should substrate 200, the echo area 202 that 330 pairs in this light tight district should substrate 200.Utilize ultraviolet light to see through this light shield 300 these photoresist layers 240 of irradiation, make this photoresist layer 240 that photoresponse take place.Photoresist layer 240 whole sensitization of this line areas 203; Because the transmittance of this semi-opaque region 320 is less than the transmittance of this photic zone 340, thereby the only partly sensitization of the photoresist layer 240 of this penetrating region 201, and the sensitization degree of depth is less than photoresist layer 240 thickness of line areas 203; Photoresponse does not then take place in the photoresist layer 240 of this echo area 202.Utilize developer solution that this photoresist layer 240 is developed, with removal the photoresistance part of photoresponse takes place, thereby form structure as shown in Figure 5, promptly, the photoresist layer 240 of line areas 203 is removed fully, and the residue photoresistance thickness of penetrating region 201 is less than the photoresistance thickness of echo area 202.
Step 5, transparent electrode layer 210, cushion 220 and the reflective metal layer 230 of this line areas 203 of etching (etch) expose line areas 203, and as shown in Figure 6, the pattern of through electrode forms.Etching mode can be wet etching (wet etching), and the mixed solution that utilizes HF and NH4F is as etching solution (etchant).Etching mode also can be dry ecthing (dryetching), as plasma etching (plasma etching).
Step 6, use oxygen or its plasma with photoresist layer 240 ashing (ashing) and removal ashing part, expose the reflective metal layer 230 of penetrating region 201, as shown in Figure 7, the photoresist layer 240 of echo area 202 is basic identical by photoresist layer 240 thickness of the thickness of ashing and penetrating region 201, and echo area 202 is the remainder photoresistance still.
Step 7 sees also Fig. 8, and reflective metal layer of etching penetrating region 201 correspondences 230 and cushion 220 expose the transparent electrode layer 210 of penetrating region 201, promptly form through electrode 204.
Step 8, see also Fig. 9, utilize acetone (acetone) or methyl ethyl ketone (methyl ethylketone) to remove the residue photoresistance, it is the photoresist layer 240 of echo area 202 correspondences, can expose the reflective metal layer 230 of echo area 202, this remaining reflective metal layer 230 is reflecting electrode 205.
The light shield 300 that above-mentioned method for semi-penetration semi-reflection liquid crystal display uses is slit light shields, it has the characteristics of may command transmittance, utilize this light shield 300 step of making reflecting electrode 205 can be attached to the manufacture process of through electrode 204, just form through electrode 204 and reflecting electrode 205 in same manufacture process.This manufacture method only need be revised one light shield, increases a photoresistance ashing and etching step in addition again, just can produce through electrode 204 and reflecting electrode 205, and production cost is lower.In addition, this manufacture method also need not the difficult organic polymer of grasping of operating characteristic, thereby has simplified technological process
Method for semi-penetration semi-reflection liquid crystal display of the present invention is other numerous embodiments also, for example: this light shield also can comprise three semi-opaque region, the transmittance maximum of the semi-opaque region of line areas correspondence wherein, the transmittance of the semi-opaque region of penetrating region correspondence takes second place, the transmittance minimum of the semi-opaque region of echo area correspondence; The width of a plurality of slits of this light shield also can be different.
Claims (10)
1. method for semi-penetration semi-reflection liquid crystal display, this display comprises a substrate, this substrate comprises an echo area and a penetrating region, and this manufacture method may further comprise the steps: form a transparent electrode layer, a cushion and a reflective metal layer successively at this substrate surface; At this reflective metal layer surface deposition one photoresist layer; One light shield is provided, and this light shield comprises a first area and a second area, and the transmittance of first area is greater than the transmittance of second area, and this first area is to should penetrating region, and this second area is to should the echo area; Utilize this light shield to this photoresist layer exposure, and the photoresist layer after the exposure is developed, make the thickness of this photoresist layer in this echo area greater than the thickness of this photoresist layer in this penetrating region; This photoresist layer of ashing, to remove the photoresistance of penetrating region, the echo area is the remainder photoresistance then; The cushion of this penetrating region of etching and reflective metal layer expose the transparent electrode layer of penetrating region, are through electrode; Remove the residue photoresistance of echo area, expose the reflective metal layer of echo area, be reflecting electrode.
2. method for semi-penetration semi-reflection liquid crystal display as claimed in claim 1 is characterized in that: this transparent electrode layer, cushion and reflective metal layer are to utilize chemical vapour deposition technique or physical vaporous deposition to form.
3. method for semi-penetration semi-reflection liquid crystal display as claimed in claim 1 is characterized in that: the material of this transparent electrode layer is tin indium oxide or indium zinc oxide.
4. method for semi-penetration semi-reflection liquid crystal display as claimed in claim 1 is characterized in that: the material of this reflective metal layer is aluminium, silver or aluminium neodymium alloy.
5. method for semi-penetration semi-reflection liquid crystal display as claimed in claim 1 is characterized in that: the material of this cushion is molybdenum or titanium.
6. method for semi-penetration semi-reflection liquid crystal display as claimed in claim 1 is characterized in that: this first light shield comprises the slit that a plurality of width are identical.
7. method for semi-penetration semi-reflection liquid crystal display as claimed in claim 1 is characterized in that: the cineration step of this photoresist layer is to adopt oxygen or oxygen plasma to remove photoresist layer.
8. method for semi-penetration semi-reflection liquid crystal display as claimed in claim 1 is characterized in that: the residue photoresistance of removing the echo area is that employing acetone or methyl ethyl ketone are stripper.
9. method for semi-penetration semi-reflection liquid crystal display as claimed in claim 1, it is characterized in that: this substrate further comprises a line areas, this penetrating region is between this line areas and this echo area, this light shield further comprises one the 3rd zone, and the transmittance in the 3rd zone is greater than the transmittance of this first area.
10. method for semi-penetration semi-reflection liquid crystal display as claimed in claim 9, it is characterized in that: this method for semi-penetration semi-reflection liquid crystal display further is included in transparent electrode layer, cushion and the reflective metal layer of preceding this line areas of etching of cineration step, exposes this line areas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005101212573A CN1987654A (en) | 2005-12-23 | 2005-12-23 | Method for semi-penetration semi-reflection liquid crystal display |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005101212573A CN1987654A (en) | 2005-12-23 | 2005-12-23 | Method for semi-penetration semi-reflection liquid crystal display |
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| CN1987654A true CN1987654A (en) | 2007-06-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2005101212573A Pending CN1987654A (en) | 2005-12-23 | 2005-12-23 | Method for semi-penetration semi-reflection liquid crystal display |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102548227A (en) * | 2012-01-06 | 2012-07-04 | 牧东光电（苏州）有限公司 | Single film-wetting circuit-manufacturing method |
| CN106681099A (en) * | 2016-12-20 | 2017-05-17 | 厦门天马微电子有限公司 | Mask plate and array substrate |
| CN107908054A (en) * | 2017-12-15 | 2018-04-13 | 深圳市华星光电技术有限公司 | Display device, semi-transparent semi-reflecting array base palte and its manufacture method |
-
2005
- 2005-12-23 CN CNA2005101212573A patent/CN1987654A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102548227A (en) * | 2012-01-06 | 2012-07-04 | 牧东光电（苏州）有限公司 | Single film-wetting circuit-manufacturing method |
| CN106681099A (en) * | 2016-12-20 | 2017-05-17 | 厦门天马微电子有限公司 | Mask plate and array substrate |
| CN106681099B (en) * | 2016-12-20 | 2020-05-01 | 厦门天马微电子有限公司 | Mask plate and array substrate |
| CN107908054A (en) * | 2017-12-15 | 2018-04-13 | 深圳市华星光电技术有限公司 | Display device, semi-transparent semi-reflecting array base palte and its manufacture method |
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