CN1983306A - Method for operating non-volatile memory and its related circuit - Google Patents

Method for operating non-volatile memory and its related circuit Download PDF

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Publication number
CN1983306A
CN1983306A CN 200510131666 CN200510131666A CN1983306A CN 1983306 A CN1983306 A CN 1983306A CN 200510131666 CN200510131666 CN 200510131666 CN 200510131666 A CN200510131666 A CN 200510131666A CN 1983306 A CN1983306 A CN 1983306A
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China
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voltile memory
write
data
operating
program
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CN 200510131666
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Chinese (zh)
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宁中和
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MStar Semiconductor Inc Taiwan
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MStar Semiconductor Inc Taiwan
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Priority to CN 200510131666 priority Critical patent/CN1983306A/en
Publication of CN1983306A publication Critical patent/CN1983306A/en
Pending legal-status Critical Current

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Abstract

A method for operating non-volatile internal memory executed verification program on non-volatile internal memory only after writing-in program is executed at least continuously twice on said non-volatile internal memory.

Description

The method of operating of non-voltile memory and interlock circuit thereof
Technical field
The present invention is relevant for a kind of non-volatility memorizer method of operating, and particularly writes (program) method relevant for a kind of non-voltile memory of wireless radio frequency identification label.
Background technology
Bar code (bar code) is the mode that is commonly used to manage kinds of goods at present, but bar code has lacked initiative, always to there be individual scanning device and the liftoff scanning bar code of low coverage just can pick out the Identification Data of kinds of goods, for example the name of product of kinds of goods, the source of goods or the data of stocking up day or the like.If a label with antenna can be arranged on the kinds of goods, it is just more convenient to follow the trail of goods so.Radio RF identification label (Radio Frequency Identification tag hereinafter is called for short the RFID label) system utilizes radiowave to transmit recognition data, allows the supvr can manage kinds of goods wirelessly.The wireless radio frequency identification label system is made up of a plurality of radio RF identification labels and reader.Each RFID label is the label with antenna, and it has a non-voltile memory to store Identification Data.Each RFID label carries out the transmission of data wirelessly by above-mentioned antenna with reader, further according to received data non-voltile memory is carried out the sequencing action.
So, existing RFID label in the flow process that writes Identification Data is: after writing the Identification Data (0/1) of a position, just then carry out proving program.That is, the control circuit of RFID label promotes operating voltage earlier so that write Identification Data to non-voltile memory; Then, control circuit reduces operating voltage so that read the Identification Data that just writes in the non-voltile memory and then the Identification Data that reads is sent to reader (reader) for checking via antenna.When like this way, correspondence write 128 Identification Data to non-voltile memory, just need repetition descending operation voltage 128 times.So it is not only time-consuming and waste electric energy again that this kind writes the flow process of Identification Data, may also can cause the situation of undercurrent when writing data when serious.
Summary of the invention
In view of this, purpose of the present invention is exactly that a kind of method of operating of non-voltile memory is being provided, and writes the efficient of Identification Data in order to lifting.
According to purpose of the present invention, a kind of method of operating of non-voltile memory is proposed.The method of operating of this non-voltile memory is used for radio RF identification label.This radio RF identification label comprises above-mentioned non-voltile memory.The method of operating of this non-voltile memory is described below.Non-voltile memory is carried out write-in program at least continuously twice.This write-in program is according to desiring to write the one or more positions of data write-once to this non-voltile memory.And, non-voltile memory is carried out proving program.This proving program in order to the stored storage data of checking non-voltile memory whether with desire to write data and conform to.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Description of drawings
Fig. 1 is the calcspar of radio frequency identification system.
Fig. 2 is the process flow diagram of a kind of non-volatility memorizer method of operating of a preferred embodiment of the present invention.
Fig. 3 shows the flow process that writes according to preferred embodiment of the present invention.
Fig. 4 shows RFID label circuit according to a particular embodiment of the invention.
Embodiment
The present invention is used for the non-voltile memory of wireless radio frequency identification label, after this non-voltile memory being carried out at least continuously twice write-in program, just non-voltile memory is carried out proving program.This write-in program is that the data of one or more of write-onces are to non-voltile memory.The number of times that so can reduce descending operation voltage writes the time of data to non-voltile memory with minimizing, and then reaches the efficient that lifting writes data.
Please refer to Fig. 1, it is a functional block diagram of radio frequency identification system.Radio frequency identification system 100 for example comprises radio RF identification label 102, reader 104 and control reader 104 or system's (not being illustrated among Fig. 1) that the data of reader 104 are processed.This RFID label 102 comprises chip 106 and antenna 108.Chip 106 comprises control circuit 110 and non-voltile memory 112, control circuit 110 comprises mimic channel and digital circuit (not shown), mimic channel bridges between antenna 108 and digital circuit and is sent to digital circuit in order to the wireless signal that antenna 108 is received, to allow digital circuit that non-voltile memory 112 is carried out relevant access action.What wherein need pay special attention to is that for the type of most non-voltile memory 112, required voltage potential is greater than reading the required voltage potential of non-voltile memory data usually when writing Identification Data to non-voltile memory 112.(flash memory) is example with the quickflashing non-voltile memory, need provide when generally writing data+12 volts operating voltage is to non-voltile memory 112, and need provide during reading of data+3.3 volts operating voltage is to non-voltile memory 112.
Please refer to Fig. 2, it is the process flow diagram of a kind of non-volatility memorizer method of operating of a preferred embodiment of the present invention.The non-volatility memorizer method of operating is used for above-mentioned non-voltile memory 112, and it is described below: at first, in step 200, non-voltile memory 112 is carried out write-in program at least continuously twice.The Identification Data that the Identification Data write-once that this write-in program system foundation is desired to write is one or more is to non-voltile memory 112.Then, in step 202, after executing write-in program continuously, non-voltile memory 112 is carried out proving program.Whether this proving program conforms to the identification data of desiring to write in order to checking non-voltile memory 112 stored Identification Data.
Furthermore, for example non-voltile memory 112 has 128 storage volume.And write-in program is corresponding to the design of control circuit 110, but position of write-once or a plurality of s' Identification Data, for example Identification Data of 1,4 or 8 positions of write-once.With the Identification Data of 8 positions of write-in program write-once, and Identification Data is that 128 data are done explanation; In step 200, control circuit 110 is promoted to corresponding operating voltage so that non-voltile memory 112 is carried out write activity and carried out write-in program at least continuously twice corresponding to the type of non-voltile memory 112, promptly carries out twice write-in program continuously and writes to non-voltile memory 112 with the Identification Data with 16 positions.Perhaps, carrying out M write-in program continuously writes with the Identification Data with 8 * M position.And preferably, carry out continuously repeatedly write-in program with 128 Identification Data write-once to non-voltile memory 112.Then, in step 202, non-voltile memory 112 is carried out proving program.Wherein, step 202 after carrying out twice write-in program continuously, just can be carried out at least.And preferably in 128 Identification Data write-once to non-voltile memory 112, just non-voltile memory 112 is carried out proving programs.For example after executing twice write-in program, control circuit 110 reduces operating voltages and reads action so that non-voltile memory 112 is carried out proving programs so that 16 positions of non-voltile memory 112 are carried out.Whether this proving program conforms to the identification data of desiring to write in order to the identification data that checking non-voltile memory 112 is write when the step 200.
In this embodiment, after non-volatility memorizer method of operating system carries out write-in program continuously, just carry out proving program.Be preferably Identification Data all write non-voltile memory 112 after, carry out proving program again.So, can reduce the number of times of control circuit 110 few descending operation voltages and shorten the time that writes Identification Data, and then reach the power consumption write the efficient of Identification Data and more can reduce RFID label 102, the situation of undercurrent when promptly avoiding writing data of promoting.
In addition, in carrying out the write-in program process (being step 200), when the stored raw bits data (1/0) of a certain bit data (0/1) in the Identification Data of desiring to write and these non-voltile memory 112 corresponding address are inequality, write-in program is to write this bit data in non-voltile memory 112 corresponding address, otherwise does not write this bit data again in non-voltile memory 112 corresponding address.Furthermore, non-voltile memory 112 preferably is formulated for same state, promptly " 0 with all positions all in advance when initialization " or " 1 ", sequencing in advance (pre-program) be called.Afterwards when write-in program, do not carry out write activity when writing identical bits when running into.For example, desire to write data for " 1 ", and non-voltile memory is formulated for earlier in corresponding address " 1 " time, then do not carry out writing " 1 " action, so can further save time and the electric energy that writes Identification Data.
Fig. 3 has shown the flow process that writes according to a particular embodiment of the invention, and in step 310, RFID label 102 enters Planning Model (program mode); In step 320, RFID label 102 boosts; Then, in step 330, RFID label 102 writes one or more positions of Identification Data, for example writes the Identification Data of 1,4 or 8 position; In step 340, judge whether to write and finish, write the step 350 of then advancing if finish, do not write if finish, then get back to step 330, continue to write the identification data.Therefore step 320 makes RFID label 102 continuous several times write one or more positions of Identification Data to 350, and writes the Identification Data of 1,4 or 8 position each time.In this embodiment, treat to write fully after the identification data,, enter read mode (readmode) in step 342; Then, carry out step-down in step 344; In step 350, whether the Identification Data in the checking RFID label 102 is correct, if the failure of checking Identification Data is got back to step 310 and reentered Planning Model to write Identification Data again; If the success of checking Identification Data, the step 360 of advancing is made as 1 with locking bit, to finish this embodiment flow process.In this embodiment, Identification Data in finish write planning after, then be subjected to locking bit protection, can not change arbitrarily.This embodiment verifies after data to be identified all write again, can significantly reduce the buck number of times of Identification Data ablation process.
Fig. 4 has shown that RFID label circuit 400 according to a particular embodiment of the invention (can specifically be implemented on chip or naked crystalline substance, die), comprise control circuit 410, locking bit 420 and non-voltile memory 430.Control circuit 410 is coupled to locking bit 420 and non-voltile memory 430, and the Identification Data that writes 112 with the 900MHZ agreement is an example, utilizes the previous process operation that discloses to cooperate explanation.When initialization, non-voltile memory 430 all is formulated for 1; write the phase in system afterwards; only run into and write 0 and just can carry out real write activity; write 1 if run into; then label circuit 400 can make an immediate response to have finished and write; there is no actual write activity takes place; therefore can save the number of times of write time and buck; by the time after total system writes 112 data and finishes; through after being proved to be successful, control circuit 410 just is set at 1 with locking bit 420, represents that these 112 have been finished planning; should accept protection, can not change arbitrarily.
The non-voltile memory person that the above embodiment of the present invention disclosed can effectively promote the efficient that writes Identification Data, and can write flow process and deposit and do not have a compatible problem with existing.
In sum, the present invention discloses a kind of method of operating that is used for the non-voltile memory of wireless radio frequency identification label, desires to write data according to one and writes many bit data continuously to non-voltile memory; And whether correct according to desiring to write those stored bit data of data verification non-voltile memory, up to till desiring to write data and fully writing and verify in the non-voltile memory.Each data can be 1,4 or 8 bit data, and the step of checking can wait that desiring to write data fully writes unified again checking the in the non-voltile memory, perhaps can verify several times, all can reach the purpose of the number of times that reduces buck.
The present invention also discloses a kind of wireless radio frequency identification label circuit, comprise control circuit, locking bit and non-voltile memory, control circuit is coupled to locking bit and non-volatile memory, and wherein, control circuit writes one continuously and desires to write many bit data of data to non-voltile memory.For example, desire to write data and be 128 data, each data can be 1,4 or 8 bit data.Whether control circuit is in will desiring to write after data fully write in the non-voltile memory, correct according to the content of desiring to write the data verification non-voltile memory via reader.Preferably, control circuit is in fully writing in the non-voltile memory desiring to write data, and the content empirical tests of non-voltile memory correct after, control circuit is set locking bit, is written to prevent the data in the non-voltile memory.
In sum; though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly be familiar with present technique field person; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.

Claims (20)

1. the method for operating of a non-voltile memory is used for a radio RF identification label, and this radio RF identification label has this non-voltile memory, and this method comprises:
This non-voltile memory is carried out write-in program at least continuously twice, and the one or more bit data of data write-once are desired to write to this non-voltile memory according to one by this write-in program system; And
This non-voltile memory is carried out a proving program, and this proving program is in order to verify whether the stored storage data of this non-voltile memory is desired to write data with this and conformed to.
2. the method for operating of non-voltile memory as claimed in claim 1 is characterized in that, the step of carrying out this write-in program more comprises:
This non-voltile memory is carried out repeatedly write-in program continuously all to write in this non-voltile memory this is desired to write data.
3. the method for operating of non-voltile memory as claimed in claim 2 is characterized in that, this proving program is to carry out after carrying out those times write-in program continuously.
4. the method for operating of non-voltile memory as claimed in claim 1 is characterized in that, this proving program is to carry out after carrying out twice this write-in program continuously.
5. the method for operating of non-voltile memory as claimed in claim 1, it is characterized in that, carry out in the process of this write-in program, when this one digit number of desiring to write data according to the stored raw bits data of this non-voltile memory corresponding address when inequality, then this write-in program is write this bit data in this non-voltile memory corresponding address, otherwise do not write this bit data again in this non-voltile memory corresponding address.
6. the method for operating of non-voltile memory as claimed in claim 1 is characterized in that, this frequency identification volume label also comprises a control circuit, and this control circuit is in order to carry out this write-in program.
7. the method for operating of non-voltile memory as claimed in claim 1, it is characterized in that, this frequency identification volume label also comprises a control circuit, in the step of carrying out this proving program, this control circuit reads the stored storage data of this non-voltile memory and is sent to a reader for checking by the antenna of this frequency identification volume label, and this reader is desired to write data by frequency electromagnetic waves with this and is sent to this RF identification label.
8. method of operating that is used for the non-voltile memory of a radio RF identification label, this method comprises:
A. desire to write data according to one and write many bit data continuously to this non-voltile memory; And
Whether b. desire to write those stored bit data of this non-voltile memory of data verification according to this correct.
9. the method for operating of non-voltile memory as claimed in claim 8 is characterized in that each data is 1,4 or 8 bit data.
10. the method for operating of non-voltile memory as claimed in claim 8 is characterized in that, also comprises step: repeating step a and step b, and till this being desired to write data and fully writing and verify in this non-voltile memory.
11. the method for operating of non-voltile memory as claimed in claim 10, it is characterized in that, in step b, when verifying that those stored bit data of this non-voltile memory are correct, then further set a locking bit of this wireless radio frequency identification label, be written to prevent the data in this non-voltile memory.
12. a method of operating that is used for the non-voltile memory of a radio RF identification label, this method comprises:
A. desire to write data according to one and write many bit data continuously to this non-voltile memory, fully write this non-voltile memory up to this being desired to write data; And
Whether b. desire to write those stored bit data of this non-voltile memory of data verification according to this correct.
13. the method for operating of non-voltile memory as claimed in claim 12 is characterized in that, each data is 1,4 or 8 bit data.
14. the method for operating of non-voltile memory as claimed in claim 12 is characterized in that, in step b, when verifying that stored those bit data of this non-voltile memory are incorrect, re-executes step a and step b.
15. the method for operating of non-voltile memory as claimed in claim 12, it is characterized in that, in step b, when those stored bit data of this non-voltile memory of checking are correct, then further set a locking bit of this wireless radio frequency identification label, be written to prevent the data in this non-voltile memory.
16. a wireless radio frequency identification label circuit comprises:
One control circuit;
One locking bit is coupled to this control circuit; And
One non-voltile memory is coupled to this control circuit,
Wherein, this control circuit writes one continuously and desires to write many bit data of data to this non-voltile memory.
17. wireless radio frequency identification label circuit as claimed in claim 16 is characterized in that, each data is 1,4 or 8 bit data.
18. wireless radio frequency identification label circuit as claimed in claim 16 is characterized in that, this desires to write data is 128 data.
19. wireless radio frequency identification label circuit as claimed in claim 16, it is characterized in that, this control circuit fully writes in this non-voltile memory this being desired to write data, and this non-voltile memory the appearance empirical tests correct after, this control circuit is set this locking bit, is written to prevent the data in this non-voltile memory.
20. wireless radio frequency identification label circuit as claimed in claim 16, it is characterized in that, whether this control circuit is this to be desired to write after data fully write in this non-voltile memory, correct according to this content of desiring to write this non-voltile memory of data verification via a reader.
CN 200510131666 2005-12-14 2005-12-14 Method for operating non-volatile memory and its related circuit Pending CN1983306A (en)

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Application Number Priority Date Filing Date Title
CN 200510131666 CN1983306A (en) 2005-12-14 2005-12-14 Method for operating non-volatile memory and its related circuit

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Application Number Priority Date Filing Date Title
CN 200510131666 CN1983306A (en) 2005-12-14 2005-12-14 Method for operating non-volatile memory and its related circuit

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CN1983306A true CN1983306A (en) 2007-06-20

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102446280A (en) * 2010-09-30 2012-05-09 西门子公司 Data verifying method, device and system
CN107945832A (en) * 2016-10-12 2018-04-20 力旺电子股份有限公司 The control voltage method for searching of nonvolatile memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102446280A (en) * 2010-09-30 2012-05-09 西门子公司 Data verifying method, device and system
CN102446280B (en) * 2010-09-30 2016-03-23 西门子公司 A kind of method of verification msg, Apparatus and system
US9659196B2 (en) 2010-09-30 2017-05-23 Siemens Aktiengesellschaft Method, apparatus and system for verifying data
CN107945832A (en) * 2016-10-12 2018-04-20 力旺电子股份有限公司 The control voltage method for searching of nonvolatile memory
CN107945832B (en) * 2016-10-12 2020-06-02 力旺电子股份有限公司 Control voltage searching method of nonvolatile memory

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Application publication date: 20070620