CN1982502A - Sputtering target - Google Patents
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- CN1982502A CN1982502A CN200610166715.XA CN200610166715A CN1982502A CN 1982502 A CN1982502 A CN 1982502A CN 200610166715 A CN200610166715 A CN 200610166715A CN 1982502 A CN1982502 A CN 1982502A
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Abstract
An ITO (indium-tin oxide) sputtering target having a length four or more times the width thereof and free from cracking during vacuum evacuation or at the initiation of sputtering is provided. The long-size, multi-divided ITO sputtering target can be constituted by using, as an ITO sintered compact constituting the long-size multi-divided ITO target, an ITO sintered compact having 700 to 800 Vickers hardness and 200 to 250 MPa three-point bending strength measured by the application of load in a direction parallel to the grinding direction of grinding treatment applied to the surface to be a sputtering surface and also regulating the thickness of a solder layer used for bonding the ITO sintered compact and a backing plate together to 0.5 to 1 mm. Moreover, in the long-size, multi-divided ITO sputtering target having a length four or more times the width thereof, the two sintered compacts have spacing width between 0.4 mm and 0.8 mm for the predetermined spacing of the adjacent sections.
Description
The application be that October 11, application number in 2002 are 02143594.4 the applying date, denomination of invention divides an application for the Chinese invention patent application of " sputtering target ".
Technical field
The present invention relates on the monolithic liner plate, engage the ITO sputtering target used when making transparent conductive film and the multistage target of especially a plurality of targets, particularly, the present invention relates to 0.7 times-1.0 times monolithic type sputtering target and target length that the target minor axis is a major axis is the elongated multi-stage type sputtering target of width more than 4 times.
Background technology
ITO (indium tin oxide) film has the feature that electroconductibility is strong, penetrance is strong, carries out retrofit owing to easier, so it is used in the flat-panel monitor of liquid-crystal display (LCD), PDP (plasma display) etc. with in the show electrode.The manufacture method of ito thin film can be divided into chemical membrane method and physical film deposition methods such as electron beam evaporation plating method, sputtering method such as spraying thermal decomposition method, CVD method.Wherein, the sputtering method that adopts the ITO target changes little because of lasting of the resistance of big areaization easily, the film that obtained and penetrance and filming condition is controlled and is used in many production lines easily.
As the sputter equipment that is used for ito thin film, they are divided into two kinds of one chip (static opposition type) and tandems (substrate is through-type).Wherein, the one chip device is cuted a striking figure because of few foreign occurring.
Along with the maximization of in recent years flat-panel monitor, the size of used glass substrate also increases when making display pannel.Thereby the size of used target also increases gradually according to substrate size ground when making film.Concerning static opposition type sputter equipment, because target size must be bigger than substrate size again, so the size on each limit of target may be above 800 millimeters.In addition, under the situation of the target that is used for the through-type sputter equipment of substrate, the aspect ratio of target increases, and how many substrates increases, target will longitudinal extension how long.
Under the occasion of making such ITO target, shaping and the required production unit of sintering more maximized than the past, thereby needed new facility investment, and owing to powder forming worsens along with size maximizes, so yield rate is very low, the result, target manufacturing cost and productivity worsen.Therefore, as the elongated shape target, employing be the multi-stage type target that on liner plate, engages a plurality of targets.
The engaging process that engages the ITO sintered compact on liner plate is such carrying out, and promptly after being heated to sintered compact and liner plate more than the solder flux fusing point, engages with solder flux, cools off subsequently.In process of cooling, the coefficient of thermal expansion of sintered compact and liner plate is different, therefore, has occurred crooked and cracking.
In addition, after being installed in the target of making on the sputter equipment, bending that has occurred when vacuumizing, taking place and the rimose problem that causes by the thermal stresses that in sputter procedure, takes place.Because target ftractures and can not be used to sputter, so exist the serious problems that cause production line downtime.
Such target cracking problem is remarkable all the more along with the target size increase.In order to solve such target cracking problem, once proposed the grinding direction on regulation target surface and the surfaceness after the grinding and further be defined as scheme (spy opens the 2001-26863 communique) below 5 microns.This motion is effective with elongated target less than the tandem arrangement of 4 times of width to its length that hits.
But, when resembling at present like this that size more maximizes and length reaches width more than 4 times the time, in above-mentioned motion, such problem has appearred continually again, and promptly after being installed on the target assembly, vacuumizing the back or the target cracking in sputter procedure, occurring.And, be similar in the foursquare one chip sputter equipment at target shape, on the little any direction of the difference of major axis and minor axis, bending has also taken place, therefore, above-mentioned motion is not necessarily effective.Thereby people wish to work out a kind of one chip sputter equipment that can weave large-scale effectively and reach the elongated multi-stage type target rimose countermeasure of width more than 4 times with target and target length.
Summary of the invention
Problem of the present invention provides such ITO sputtering target, and it can be suppressed at the target minor axis effectively is 0.7 times-1.0 times one chip ITO sputtering target of major axis or the ITO sputtering target more than 4 times that length reaches width when being installed on the device, when vacuumizing and/or the target cracking that takes place when carrying out sputter.
The inventor is to preventing that minor axis from being that 0.7 times-1.0 times the one chip ITO sputtering target of major axis and the target cracking of elongated multistage shape ITO sputtering target are studied.Found that, improve ITO sintered compact temperature (2) by (1) and form the target structure that can absorb the stress that produces by target, can suppress the cracking relevant and take place with the problems referred to above.Exactly, in view of the thickness of welding flux layer that can be by suitably getting jointing sintered surely body and liner plate when using DPH, 3 bending strengths to have the sintered compact of the value in pre-determined range solves the problems referred to above, finish the present invention thus.
In addition, the present invention reaches the elongated target of width more than 4 times to the target total length and has carried out lucubrate, found that such cracking mechanism, (1) even if when sintered compact engages with liner plate, do not bend, in operation subsequently (operation of taking out from carry cover and installing in the device is medium), the also violent warpage of elongated target, (2) warpage in this operation is positioned at (the recessed curved and target surface protuberantia of target surface) on the both direction, (3) described warpage is under the recessed curved occasion of target surface, locate at cutting part (two sintered compacies are with the part of predetermined gap adjacency), sintered compact is in contact with one another with cross-sectional shape shown in Figure 1, (4) if these sintered compacies contact strongly, impact the be full of cracks that produces slightly by it on this part, (5) are when loading onto the target that described be full of cracks takes place, when vacuumizing, target is pressurized under atmospheric pressure, thereby the target surface is crooked on the protuberantia direction, at this moment, produces cracking by the be full of cracks part.Past is because target length is less than 4 times of width, so crooked little during operation, even be in contact with one another between the adjacent sintered compact, can not produce cracking yet, and when length become width more than 4 times the time, the crooked increase is in contact with one another between the sintered compact, and the result produces cracking.
Given this, study, found that overcoming the cracking countermeasure, (1) improves sintered compact intensity, (2) form and to be difficult to the target structure of collision mutually between the sintered compact, (3) form can absorb the stress that causes by target target structure, can suppress the cracking relevant thus and take place with the problems referred to above.Therefore, further the result of research is, found so to address the above problem and to have finished thus the present invention, the DPH that is sintered compact is more than 700-below 800, applying load and 3 bending strengths measuring are more than 200 MPas below-250 MPas abreast with the grinding direction of the ground finish of carrying out on the face that becomes the sintered compact sputter face, two sintered compacies are more than 0.4 millimeter below-0.8 millimeter with the width in the gap of the cutting part of predetermined gap adjacency, simultaneously, the thickness that engages the welding flux layer of described sintered compact and liner plate is more than 0.5 millimeter below-1 millimeter.
Promptly, the present invention relates to such sputtering target, it is actually and engages the polylith sintered compact that is made of indium, tin and oxygen and the multistage target that forms on the monolithic liner plate, it is characterized in that, the DPH of described sintered compact is more than 700-below 800, with the grinding direction of the ground finish of on the face that becomes the sintered compact sputter face, carrying out abreast applying load and 3 bending strengths measuring be more than 200 MPas below-250 MPas, and the thickness that engages the welding flux layer of described sintered compact and liner plate is more than 0.5 millimeter below-1 millimeter.
Especially, the present invention relates to the target minor axis is 0.7 times-1.0 times one chip sputtering target of major axis, it is actually and engages on the monolithic liner plate by indium, the polylith sintered compact that tin and oxygen constitute and the multistage target that forms, it is characterized in that, the DPH of described sintered compact is more than 700-below 800, with the grinding direction of the ground finish of on the face that becomes the sintered compact sputter face, carrying out abreast applying load and 3 bending strengths measuring be more than 200 MPas below-250 MPas, and the thickness that engages the welding flux layer of described sintered compact and liner plate is more than 0.5 millimeter below-1 millimeter.In addition, the present invention relates to the target total length is the elongated multistage shape sputtering target more than 4 times of width, and wherein two sintered compacies are more than 0.4 millimeter below-0.8 millimeter with the width in the described gap of the cutting part of predetermined gap adjacency.
In addition, the point of a knife travel direction when the grinding direction of ground finish is grinding, specifically, for example it is the trend of the muscle shape grinding vestige that forms on the sintered compact surface.In addition, in 3 anti-reflecting bending strength determinings, with the grinding direction abreast applying load measure and mean that the force that makes 3 crooked experiments is parallel with described grinding direction, the straight line in 3 forces that promptly connects 3 crooked experiments is parallel with described grinding direction.
Become one chip target and the elongated general rectangularity of multistage shape target or the approximate rectangular shape of research object of the present invention.Approximate rectangular shape comprises the situation of each angle of rectangle through the R chamfer machining.As such one chip sputtering target, can enumerate 810 millimeters * 910 millimeters example, for example 270 millimeters * 455 millimeters sintered compact as shown in Figure 2 be divided into per 3 and become 2 row forms.Like this, in sputtering target of the present invention, the length that also can prevent the target major axis effectively is at the large-scale one chip sputtering target cracking more than 800 millimeters.In addition, as elongated multistage target, it has the thick and structure shown in the side-view of Fig. 3 of sintered compact on its length direction two ends usually.Size for example can be 300 millimeters * 1780 millimeters.Like this, in sputtering target of the present invention, can prevent effectively that also total length from being the elongated multistage shape target cracking more than 4 times of width, can obtain total length like a cork and reach elongated multistage shape target more than 1200 millimeters.
According to the present invention, therefore the cracking that can be suppressed at when vacuumizing effectively or take place during sputter, can easily obtain vacuumizing or sputter indehiscent ITO sputtering target when beginning and in the sputter procedure.Especially, can easily obtain when vacuumizing or during the beginning sputter and 0.7 times-1.0 times one chip ITO sputtering target or length indehiscent in sputter procedure, that the target minor axis is major axis reach the elongated multistage shape ITO sputtering target of width more than 4 times, can on large substrate, form the ITO film at a high speed.
Description of drawings
Fig. 1 is the sectional view that the target surface of expression multi-stage type target in the past becomes recessed multistage portion periphery when curved.
Fig. 2 represents an example of one chip multistage targeted forms.
Fig. 3 represents an example of the shape of elongated shape multistage ITO target of the present invention, and wherein (a) is side-view, (b) is orthographic plan.
Fig. 4 is the sectional view of end that expression is intersected sintered compact sputter face and the sintered compact side that the constitutes cutting part cutting part periphery when carrying out chamfering.
The sectional view of the cutting part periphery when Fig. 5 is the increase of expression cutting part gap length.
Nomenclature
The 1-sintered compact; The 2-liner plate; The width in 3-cutting part space; 4-grinding direction; 5-carries out the sintered compact end of chamfer machining;
Embodiment
Below describe the present invention in detail.
ITO sintered compact that the present invention is used and manufacture method thereof are that DPH is the sintered compact below-800 and obtain the manufacture method of such sintered compact more than 700, and they for example, can be made in order to the below method not specific to certain sintered compact and method.
At first, in the mixed powder of forming by indium oxide powder and stannic oxide powder, add tackiness agent etc., form by manufacturing process such as pressing or teeming practices, thereby make the ITO molding.As manufacturing process, can use pressing or teeming practice, but the preferred casting that obtains fine and close molding easily.At this moment, the median size of used powder is preferably below 1.5 microns and is 0.1 micron-1.5 microns better.Stannic oxide content in the mixed powder preferably reduces by 5 weight %-15 weight % of resistivity when making film with sputtering method.
Then, if desired, the molding that is obtained is carried out the isobaric crucial point reason of CIP.At this moment, for obtaining enough good consolidation effect, CIP pressure is preferably more than 2 tons/square centimeter and is preferably 2 tons/square centimeter-3 tons/square centimeter.If initial shaping is undertaken by teeming practice, then, can remove adhesive treatment here, in order to remove organism such as moisture in the molding that residues in behind the CIP and tackiness agent.And under the occasion that initial moulding is undertaken by pressing, when being shaped, use under the situation of tackiness agent, also wish to carry out the same adhesive treatment of removing.
Drop into the molding that obtains like this in the sintering oven and carry out sintering.As sintering method, just can use so long as can obtain the method for desired physical properties, but consider production unit cost etc., preferred atmosphere sintering processing.Though can suitably select sintering condition, in order to obtain the evaporation of dense sintering body and inhibited oxidation tin, preferred sintering temperature is 1450 ℃-1650 ℃.As for atmosphere, the moment that reaches 800 ℃ when heating up at least play finish to keep the sintering temperature time during in sintering oven, there is pure oxygen atmosphere in fact, and when the ratio (finished weight/oxygen flow) in the oxygen flow of input during oxygen (rise/minute) and molding finished weight (kilogram) be 1.0 when following, make the target densification that further becomes.In addition, improve effect in order to obtain sufficient hardness, sintering time is preferably 5 hours and was preferably 5 hours-30 hours.By setting such condition, can obtain fine and close ITO sintered compact.So the DPH of the ITO sintered compact that obtains be more than 700-below 800.
Then, the ITO sintered compact that is obtained is processed into predetermined shape and produces each target that constitutes multistage ITO target.The size and dimension that does not have each target of particular determination.
Then, in order to regulate the thickness of each target, carry out plane grinding processing.When carrying out plane grinding, be such by the grinding direction of each target material surface of being separated, promptly its differ with the long limit or the minor face that are assembled into the multistage target of target ± 10 degree in, but preferably in ± 5 degree, be best ± 1 spend in.Here, grinding direction is meant the grinding trace direction that forms the grinding vestige by the plane grinding wheel on the sintered compact surface.So, improved rupture strength.And the surface roughness Ra of sputter face is adjusted to below 0.1 micron.Add man-hour when plane grinding is carried out on the sintered compact surface, 3 bending strengths of sintered compact depend on the surfaceness after the grinding.By make Cheng Shi hardness reach more than 700 the processing of sintered compact after surface roughness Ra reach below 0.1 micron, can make with the grinding direction abreast 3 bending strengths measuring of applying load ground reach more than 2 00 MPas below-250 MPas.
In addition, the sputter face that forms the sintered compact of elongated multi-stage type target is handed over into R1-R2 or C1-C2 with the short portion that intersect the sintered compact side that constitutes cutting part.Thus one, even if sputter face be same as in figure 1ly spill and the target aggressive bend because chamfer machining (part of tape symbol 5 among Fig. 4) is carried out in the end that is easy at first contact, so the contact of sintered compact end becomes difficult and can prevent the target cracking thus.In addition, cutting part is that these are arranged at the part that the sintered compact on the liner plate adjoins each other, and is by the side of the sintered compact of adjacency and the part that space therebetween constitutes.
Making under the occasion of 0.7 times-1.0 times one chip sputtering target that the target minor axis is a major axis, a plurality of targets that obtain are placed on the predetermined position of a liner plate that is made of oxygen free copper etc. and engage with indium solders etc.At this moment, the thickness of welding flux layer is adjusted to more than 0.5 millimeter below-1.0 millimeters.If welding flux layer thickness is more than 0.5 millimeter, then the stress that is caused by target can be absorbed by welding flux layer, and the cracking rate reduces.If but, excessively increased the target total thickness then undesirablely more than 1.0 millimeters.Welding flux layer thickness is controlled in that the method below-1.0 millimeters for example can be the method that is inserted with the intermediate of pre-determined thickness in welding flux layer more than 0.5 millimeter.In other words, for example for the welding flux layer gauge control at 0.5 millimeter, thick be that 0.5 millimeter intermediate inserts in the welding flux layer.Metal wire for example can be used as intermediate.
Reach under the occasion of the elongated target of width more than 4 times in making target length, the a plurality of targets that obtained are placed on the predetermined position of a liner plate that is made of oxygen free copper etc. and with indium solders etc. and engage, but this moment, the width (part of representing with symbol 3 among the figure) in the space of cutting part (two sintered compacies are by the adjacent part of pre-fixed gap) is got more than 0.4 millimeter below-0.8 millimeter.By value is more than 0.4 millimeter, even if sputter face is recessed curved and target aggressive bend, also because of the sintered compact end do not contact can target cracking (figure 5 illustrates sectional view).But, if surpass 0.8 millimeter, then probably can sneak in film is the impurity such as copper of lining material.In addition, the same ground with the reason of one chip sputtering target is used to thickness at the welding flux layer of jointing sintered body on the liner plate and is adjusted to more than 0.5 millimeter below-1.0 millimeters.In addition, the same when the method below-1.0 millimeters is also with the one chip sputtering target more than the gauge control to 0.5 of welding flux layer millimeter.
The target minor axis of making like this is that 0.7 times-1.0 times one chip sputtering target of major axis and target length are that the elongated target of width more than 4 times can be suppressed at the target cracking that is installed into back on the vacuum unit, is taken place when vacuumizing and/or during sputter effectively.
In addition, the definition of the said DPH of the present invention and measuring method are described the same with JIS-R1610-1991, the definition of 3 bending strengths and measuring method are described the same with JIS-R1601-1991, and the definition of surfaceness is described the same with JIS-B0601-1994 with measuring method.
[embodiment]
Below describe embodiments of the invention, but the present invention is not limited to this.In addition, in embodiment and comparative example, from DPH, 3 bending strengths are made the molding of De Lvegao in advance, cut out print and measure.
At first, show embodiment and the comparative example relevant with one chip ITO sputtering target.
In adding the jar of nylon ball unshakable in one's determination, in median size is the stannic oxide powder of 1.3 microns the indium oxide powder of 90 weight % and the 10 weight % that median size is 0.7 micron, adds dispersion agent, tackiness agent and ion exchanged water and adjust slurries.After the abundant deaeration of the slurries that obtained, adopt the pressure die casting of resin mold to be shaped and the acquisition molding.Carry out under 3 tons/square centimeter pressure, this molding being carried out the CIP densified.Then, be placed in this molding in the sintering oven of pure oxygen atmosphere and carry out sintering under the following conditions.
(sintering condition)
Firing temperature: 1500 ℃, heat-up rate: 30 ℃/hour, sintering time: 15 hours, atmosphere: in 800 ℃ when heating up 400 ℃ times during to cooling, in the stove pure oxygen atmosphere, the input of ground, (finished weight/oxygen flow)=0.8.
The DPH of the sintered compact that is obtained is 720 after measured.The sintered compact that is obtained is processed to 455 millimeters * 270 millimeters rectangle as shown in Figure 2 and produces each target.At this moment, carrying out ground finish with the 800# grinding stone on to the sputter face of each sintered compact on the direction shown in the double-headed arrow of Fig. 2 lower end.The surface roughness Ra of the sintered compact that is obtained is 0.07 micron after measured.This moment with the grinding direction abreast 3 bending strengths of applying load ground mensuration be 210 MPas.
After each target that so obtains and liner plate are heated to 160 ℃, on junction surface separately, coat the indium soft solder flux.At this moment, diameter is set is 0.5 millimeter nickel wire on liner plate,, welding flux layer thickness is adjusted to 0.5 millimeter by jointing sintered body in sandwich nickel wire ground and liner plate.After on the predetermined position as shown in Figure 2 that like this successively six sintered compacies is placed in liner plate, with its cool to room temperature and obtain target.
Two targets that obtain like this are separately positioned in the vacuum unit, are vacuumizing the back and under the situation of input argon gas and oxygen, carrying out sputter.Under any one occasion in using these two targets, all do not find the target cracking.
Except firing temperature 1600 ℃, under the condition the same, make the ITO sintered compact with embodiment 1.The DPH of the sintered compact that is obtained is 760 after measured.The sintered compact that is obtained with the method processing the same with embodiment 1.Ra is 0.06 micron, and same 3 bending strengths measuring are 230 MPas.
Then, according to the method the same, make welding flux layer thickness and be 0.5 millimeter ITO target with embodiment 1.According to the method the same with embodiment 1, respectively two targets that obtained are carried out sputter, cracking all appears in any target.
Except welding flux layer thickness is 0.8 millimeter, make the ITO target by the mode the same with embodiment 2.By the mode the same with embodiment 1, respectively two targets that obtained are carried out sputter, any target does not all ftracture.
Comparative example 1
Make the ITO sintered compact according to the condition the same with embodiment 1.The DPH of the sintered compact that is obtained is 760 after measured.After the sintered compact that is obtained is processed into ideal form, except with the 400# grinding stone, carry out grinding by the method the same with embodiment 1.The Ra of the sintered compact that is obtained is 0.6 micron, with grinding direction applying load and 3 bending strengths measuring are 190 MPas abreast.
Then, by the method the same, make welding flux layer thickness and be 0.5 millimeter ITO target with embodiment 1.By the method the same with embodiment 1, two targets that sputter respectively obtained, sputter began back 1 hour, and cracking has all appearred in two targets.
Comparative example 2
When firing, except the oxygen amount (finished weight/oxygen flow)=1.2 of input in the stove, manufacturing ITO sintered compact under the condition the same with embodiment 1.The DPH of the sintered compact that is obtained is 690 after measured.The sintered compact that is obtained by the method processing the same with embodiment 1.Ra is 0.09 micron, and same 3 bending strengths measuring are 190 MPas.
Then, by the method the same, produce welding flux layer thickness and be 0.5 millimeter ITO target with embodiment 1.By the method the same with embodiment 1, two targets that sputter successively obtained began back 1 hour in sputter, and cracking has all appearred in two targets.
Comparative example 3
Under the condition the same, make the ITO sintered compact with embodiment 1.The DPH of the sintered compact that obtains is 760 after measured.The sintered compact that is obtained by the method processing the same with embodiment 1.Ra is 0.07 micron, and same 3 bending strengths measuring are 210 MPas.
Then, except welding flux layer thickness is 0.3 millimeter, make the ITO target by the method the same with embodiment 1.By the method the same with embodiment 1, two targets that sputter successively obtained began back 1 hour in sputter, and cracking has all appearred in two targets.
Then, illustrate and relevant embodiment and the comparative example of elongated multistage shape ITO sputtering target.
Under the condition the same, make sintered compact with embodiment 1.The DPH of the sintered compact that is obtained is 720 after measured.The sintered compact that is obtained is processed into predetermined shape as shown in Figure 3 and makes each target thus.At this moment, in Fig. 3,, use the sputter face of each sintered compact of 800# grinding stone grinding with on the 4 double-headed arrow directions of representing.The surface roughness Ra of the sintered compact that is obtained is 0.07 micron after measured.This moment and grinding direction be applying load and 3 bending strengths measuring are 210 MPas abreast.
After so each target of acquisition and liner plate are heated to 160 ℃, on junction surface separately, coat the indium soft solder flux.At this moment, on liner plate, arrange the nickel wire of 0.5 millimeter thickness,, the thickness of welding flux layer is adjusted to 0.5 millimeter by sandwich this jointing sintered body in nickel wire ground and liner plate.After on the predetermined position that like this successively sintered compact is arranged in liner plate, with its cool to room temperature and obtain target.Width between the cooled sintered compact (cutting part gap width) is 0.4 millimeter.
So two targets that obtain are placed in the vacuum unit successively, vacuumizing the back and carry out sputter under the situation of input argon gas and oxygen.Do not find the target cracking.
Embodiment 5
Except firing temperature is 1600 ℃, under the condition the same, make the ITO sintered compact with embodiment 4.The DPH of the sintered compact that is obtained is 760 after measured.The sintered compact that is obtained by the method processing the same with embodiment 4.Ra is 0.06 micron, and 3 bending strengths are 230 MPas.
Then, by the method the same with embodiment 4, producing welding flux layer thickness is that sintered compact gap width 0.5 millimeter, cooled is 0.4 millimeter an ITO target.By the method the same with embodiment 4, two targets that sputter successively obtained, and target cracking not.
Embodiment 6
Except welding flux layer thickness is that 0.8 millimeter, cooled sintered compact gap width are 0.7 millimeter, make the ITO target by the method the same with embodiment 5.By the method the same with embodiment 4, two targets that sputter successively obtained, and crackle does not appear on target.
Comparative example 4
Under the condition the same, make the ITO sintered compact with embodiment 1.The DPH of the sintered compact that is obtained is 760 after measured.After the sintered compact that is obtained is processed into ideal form, except with the 400# grinding stone, carry out ground finish by the method the same with embodiment 4.The Ra of the sintered compact that is obtained is 0.6 micron, and 3 bending strengths are 190 MPas.
Then, by the method the same with embodiment 4, welding flux layer thickness is that 0.5 millimeter and cooled sintered compact gap width are that the ITO target is made on 0.4 millimeter ground.By the method the same with embodiment 4, two targets that sputter successively obtained, and after sputter begins 1 hour, cracking appears in two targets.
Comparative example 5
Except the oxygen amount (finished weight/oxygen flow) of input in the stove when firing is 1.2, manufacturing ITO sintered compact under the condition the same with embodiment 1.The DPH of the sintered compact that is obtained is 690 after measured.By the method the same with embodiment 4, the sintered compact that processing is obtained.Ra is 0.09 micron, and 3 bending strengths are 190 MPas.
Then, by the method the same, produce welding flux layer thickness and be 0.5 millimeter and cooling back sintered compact gap width and be 0.4 millimeter ITO target with embodiment 4.Under the situation of two targets that obtained by the method sputter successively the same with embodiment 4, after the beginning sputter 1 hour, cracking appearred in two targets.
Comparative example 6
Under the condition the same, make the ITO sintered compact with embodiment 1.The DPH of the sintered compact that is obtained is 760 after measured.The sintered compact that is obtained by the method processing the same with embodiment 4.Ra is 0.07 micron, and 3 bending strengths are 210 MPas.
Then, except cooled sintered compact gap width is 0.2 millimeter, make the ITO target by the method the same with embodiment 4.
By the method the same with embodiment 4, two targets that sputter successively obtained, wherein one is ftractureed under situation about vacuumizing, and another piece also begins back 1 hour cracking in sputter.
Comparative example 7
Under the condition the same, make the ITO sintered compact with embodiment 1.The Cheng Shi hardness of the sintered compact that obtains is 760 after measured.By the method the same with embodiment 4, the sintered compact that processing is obtained.Ra is 0.07 micron, and 3 bending strengths are 210 MPas.
Then, except welding flux layer thickness is 0.3 millimeter, make the ITO target by the method the same with embodiment 4.Under the situation of two targets that obtained by the method sputter the same with embodiment 4, after the beginning sputter 1 hour, crackle all appearred in two targets.
Claims (4)
1, sputtering target, it is actually and engages on the monolithic liner plate by indium, the polylith sintered compact that tin and oxygen constitute and the multistage target that forms, it is characterized in that, the DPH of described sintered compact is to below 800 more than 700, with the grinding direction of the ground finish of on the face that becomes the sintered compact sputter face, carrying out abreast applying load and 3 bending strengths measuring be more than 200 MPas to 250 MPas, and the thickness that engages the welding flux layer of described sintered compact and liner plate be more than 0.5 millimeter to below 1 millimeter, two sintered compacies in the described polylith sintered compact are to below 0.8 millimeter more than 0.4 millimeter by the width in the described gap of the adjacent partitioning portion of predetermined gap.
2, sputtering target as claimed in claim 1 is characterized in that, described sputtering target is that the target minor axis is 0.7 times to 1.0 times an one chip sputtering target of major axis.
3, sputtering target as claimed in claim 2 is characterized in that, the length of described major axis is more than 800 millimeters.
4, sputtering target as claimed in claim 1 is characterized in that, described sputtering target is that the target total length is the elongated multistage shape sputtering target of width more than 4 times.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP315156/2001 | 2001-10-12 | ||
| JP2001315156A JP4000813B2 (en) | 2001-10-12 | 2001-10-12 | Sputtering target |
| JP354642/2001 | 2001-11-20 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021435944A Division CN1297684C (en) | 2001-10-12 | 2002-10-11 | Sputtering target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1982502A true CN1982502A (en) | 2007-06-20 |
| CN100529169C CN100529169C (en) | 2009-08-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200610166715XA Expired - Fee Related CN100529169C (en) | 2001-10-12 | 2002-10-11 | Sputtering target |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4000813B2 (en) |
| CN (1) | CN100529169C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102152060A (en) * | 2011-01-26 | 2011-08-17 | 宁波江丰电子材料有限公司 | Target processing method |
| CN106607667A (en) * | 2015-10-26 | 2017-05-03 | 宁波江丰电子材料股份有限公司 | Manufacturing method for target material assembly |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2005111261A1 (en) * | 2004-05-18 | 2008-03-27 | 三井金属鉱業株式会社 | Sputtering target and manufacturing method thereof |
| JP5198925B2 (en) * | 2008-04-10 | 2013-05-15 | 三井金属鉱業株式会社 | Sputtering target |
| JP5206983B2 (en) * | 2009-04-22 | 2013-06-12 | 住友金属鉱山株式会社 | ITO sputtering target and manufacturing method thereof |
-
2001
- 2001-10-12 JP JP2001315156A patent/JP4000813B2/en not_active Expired - Fee Related
-
2002
- 2002-10-11 CN CNB200610166715XA patent/CN100529169C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102152060A (en) * | 2011-01-26 | 2011-08-17 | 宁波江丰电子材料有限公司 | Target processing method |
| CN106607667A (en) * | 2015-10-26 | 2017-05-03 | 宁波江丰电子材料股份有限公司 | Manufacturing method for target material assembly |
| CN106607667B (en) * | 2015-10-26 | 2018-05-08 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100529169C (en) | 2009-08-19 |
| JP4000813B2 (en) | 2007-10-31 |
| JP2003119560A (en) | 2003-04-23 |
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