CN1982498A - Thick plate capable of consuming material and physical gas phase sedimentation target material - Google Patents
Thick plate capable of consuming material and physical gas phase sedimentation target material Download PDFInfo
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- CN1982498A CN1982498A CN 200610152334 CN200610152334A CN1982498A CN 1982498 A CN1982498 A CN 1982498A CN 200610152334 CN200610152334 CN 200610152334 CN 200610152334 A CN200610152334 A CN 200610152334A CN 1982498 A CN1982498 A CN 1982498A
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Abstract
A PVD target structure for use in physical vapor deposition include at least a detector for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. The expendable material deep board and material of physics gas phase sediment butt said above, which can reduce the cost of physics gas phase sediment butt, factory cost and increase accrual.
Description
Technical field
The invention relates to a kind of physical gas phase deposition technology.Particularly, be specifically related to a kind of slab (slab) and physical vapor deposition target material of expendable material relevant for a kind of target (target) of physical vapor deposition.
Background technology
Physical vapor deposition (following also be called for short " PVD ") processing procedure be a kind of known deposition material film that is used in the method for substrate, be commonly used to make semiconductor device.The PVD processing procedure is to finish in the high vacuum reaction chamber, contains substrate (for example wafer) among the above-mentioned reaction chamber (chamber) and desires to be deposited on suprabasil material solids source or slab, that is the PVD target.In the PVD processing procedure, the PVD target is converted into gas by solids rationally.The gas of target material transfers to the surface of substrate by the PVD target, condensation and become film in substrate then.
Have many in order to finish the method for PVD, for example evaporation, electron beam evaporation plating, plasma spraying deposition and sputter (sputtering).At present, sputter is a kind of the most frequently used method of PVD that is used for carrying out.In the process of sputter, reaction chamber can produce plasma and at the PVD target, and because the impact effect of high-octane plasma particle (ion), plasma can move to physical property or corrode the atom of (sputter) PVD target reaction surface or molecule and become the gas of target material.Target material can be transferred to the surface of substrate via the zone of a decompression by the gas of the atom of sputter or molecule, condensation and forms the film of target material in substrate then.
The work-ing life of PVD target is limited, if excessively use the PVD target, that is surpass work-ing life of PVD target, can cause considering of reliability and safety, for example excessively use the PVD target can cause the perforation of PVD target (perforation) and system discharge (arcing), and may cause the problem of output minimizing, PVD system or instrument damage and safety.
At present, the mode in the work-ing life of decision PVD target is that tracking is consumed institute's cumulative energy by PVD system or process apparatus, that is the amount of kilowatt hour (kw-hr).Yet, need take time and be proficient in and the experience of operation in person that the technician only is dependent in the accuracy of this method merely by the method for following the trail of the cumulative energy.Even be proficient in this method, the work-ing life of the PVD target of judgement is still less than work-ing life of reality, and nearly 20%～40% PVD target meeting (deciding according to the kenel of PVD target) slatterns.Problem as shown in Figure 1, Fig. 1 comprises the erosion profile figure of the PVD target material structure of raw material slab for tradition.As shown in the figure, the 1769kw-hrs after PVD process system operation, the amount that has about 60% original PVD target stays (target is residual).
Target utilization is low to be that this can cause PVD target consuming cost height owing to shorten PVD target work-ing life, and in fact, in semi-conductor was made, PVD target consuming cost was one of topmost cost.Therefore, if the target material that major part is wasted can be utilized, PVD target consuming cost will reduce substantially.In other words, can reduce manufacturing cost and increase profit significantly.
Low also can the causing of target utilization replaced the PVD target more continually, so the maintenance of PVD system or equipment is also more frequent.Moreover, during displacement PVD target,, need spended time to remove to readjust the PVD processing procedure in order to use new target.
The slab that therefore, the expendable material that a kind of PVD of can be used for processing procedure need be provided is arranged.
Summary of the invention
For solving the aforementioned problems in the prior, the invention provides a kind of slab of expendable material, comprising: one or more detector at least, in order to for the slab of this expendable material near or be reduced to one of this expendable material and both quantitatively sent signal.
The slab of expendable material of the present invention, this at least one detector comprises: an enclosure, at least a portion of this enclosure embed among the slab of this expendable material; And a filamentary element or an electrode member, be arranged among this enclosure.
The slab of expendable material of the present invention, this filamentary element or electrode member be by extending among this enclosure, and can be connected to a signal monitor device.
The slab of expendable material of the present invention, this enclosure are to be made of this expendable material.
The slab of expendable material of the present invention, this at least one detector comprises: an enclosure, at least a portion of this enclosure embed among the slab of this expendable material; And a gas, liquid or solid, be arranged among this enclosure.
The slab of expendable material of the present invention, this gas or liquid are to be made of inert material.
The slab of expendable material of the present invention when this gas, liquid or solid are gone out by this enclosure loss, can be obtained by detecting.
The slab of expendable material of the present invention, when detecting this gas, liquid or solid, show this expendable material slab residual quantity near or reached that this had been both quantitative.
The slab of expendable material of the present invention, this at least one detector comprises: one second material layer, its composition is different from this expendable material, and is arranged on the slab of expendable material in abutting connection with ground, can be obtained by detecting during this second material layer aerification.
The slab of expendable material of the present invention, when detecting this second material layer of aerification, show this expendable material slab residual quantity near or reached that this had been both quantitative.
The life-span that the slab of expendable material of the present invention, detector send the slab of this expendable material of signal indication has reached terminal point.
The slab of expendable material of the present invention, the slab of this expendable material comprises a target, is used in the physical vapor deposition processing procedure, and the composition of this gas, liquid or solid can not influence this physical vapor deposition processing procedure.
The slab of expendable material of the present invention, the slab of this expendable material comprises a target, is used in the physical vapor deposition processing procedure, and the composition of this second material layer can not influence this physical vapor deposition processing procedure.
The present invention provides a kind of physical vapor deposition target material in addition, comprising: the slab of an expendable material; And at least one detector, in order to for the slab of this expendable material near or be reduced to one of this expendable material and both quantitatively sent signal.
Physical vapor deposition target material of the present invention, this at least one detector comprise a filament, electrode of opposite, a detecting layer, a gas, a liquid or a solid, and it can send signal.
The slab of expendable material of the present invention and physical vapor deposition target material can reduce the consuming cost of physical vapor deposition target material, and manufacturing cost and increasing is made a profit.
Description of drawings
Fig. 1 comprises the erosion profile figure of the PVD target material structure of raw material slab for tradition;
Fig. 2 A is the vertical view of the PVD target material structure of specific embodiment;
Fig. 2 B is the sectional view of the 2B-2B line of Fig. 2 A;
Fig. 3 is the sectional view of the PVD target material structure of another specific embodiment;
Fig. 4 is the sectional view of the PVD target material structure of another specific embodiment;
Fig. 5 show a specific embodiment the PVD target material structure work-ing life terminal point detecting system;
Fig. 6 show another specific embodiment the PVD target material structure work-ing life terminal point detecting system;
Fig. 7 A and Fig. 7 B are the vertical view with PVD target of a plurality of tubulose detectors;
Fig. 8 A and Fig. 8 B are the target sectional view, and above-mentioned target has and can be embedded in wherein two concrete positions for pipe;
Fig. 8 C is in order to embed pipe in the concrete grammar of the position shown in Fig. 8 A;
Fig. 8 D is the front view of the tinsel shown in Fig. 8 C;
Fig. 9 A to Fig. 9 F is the pipe stereographic map of the tubulose detector of various specific embodiments;
When Figure 10 makes pipe for being presented at, remove the stereographic map of the mold component of plug analogue from pipe;
Figure 11 A and Figure 11 B show the stereographic map in order to the concrete grammar of the pipe of making the tubulose detector in block;
Figure 12 A, Figure 12 B, Figure 13 A and Figure 13 B demonstration utilize the stereographic map of a kind of concrete thin plate formation method with the pipe of manufacturing tubulose detector;
Figure 14 is the stereographic map of the PVD target material structure of another specific embodiment;
Figure 15 is the stereographic map of the PVD target material structure of another specific embodiment;
Figure 16 shows a form, and it enumerates some materials that are applicable to the concrete detector layer of target material;
Figure 17 A is the flow chart of steps of the method for making pipe of demonstration first specific embodiment;
Figure 17 B is the flow chart of steps of the method for making pipe of demonstration second specific embodiment;
Figure 18 A is the stereographic map that shows the mould/overflow mould equipment of a specific embodiment that can be used for the pipe manufacturing;
Figure 18 B is the stereographic map that shows the mould/overflow mould equipment of another specific embodiment that can be used for the pipe manufacturing;
Figure 19 is the flow chart of steps of the method for making pipe of demonstration the 3rd specific embodiment;
Figure 20 is the flow chart of steps of the method for making pipe of demonstration the 4th specific embodiment.
Embodiment
The physical vapor deposition of one embodiment of the invention (the following abbreviation " PVD ") target material structure contains the detector of terminal point in work-ing life.Symbol among the vertical view of Fig. 2 A " 100 " expression PVD target material structure, and Fig. 2 B is the sectional view of the 2B-2B line of Fig. 2 A.PVD target material structure 100 comprises consumed slab (the PVD target) 110 and the filament detector 120 of preferred materials, and it embeds the lower surface 114 of PVD target 110.
PVD target 110 comprise reaction surface 112, with respect to the lower surface 114 of reaction surface 112 and extend reaction surface 112 and lower surface 114 between sidewall surfaces 116.PVD target 110 can be a different shape, and suitable formation for example is circle, square, rectangle, ellipse, trilateral, irregular shape etc.PVD target 110 can use the generation type of known PVD target to form.For example can be with reference to U.S. Patent number 6,858,102, denomination of invention is " method of copper bearing sputtered target material and formation cupric sputtered target material ".
In one embodiment, the diameter of Yuan Xing PVD target 110 is that 18 inches, thickness are 0.250 inch.In other embodiments, PVD target 110 can be other sizes that are fit to.PVD target 110 can be made of the raw material that is fit to, for example nickel (Ni), nickel-platinum (Ni-Pt) alloy, Ni-Ti (Ni-Ti) alloy, cobalt (Co), aluminium (Al), copper (Cu), titanium (Ti), tantalum (Ta), tungsten (W), indium tin oxide (ITO), zinc sulphide-silicon-dioxide (ZnS-SiO
2), the gold (Au), silver (Ag) or other precious metals.
Filament detector 120 comprises the enclosure (enclosure) that is formed by pipe 122, and above-mentioned pipe 122 contains opening end 122a, the 122b that relatively is provided with, and opening end 122a, 122b seal up with insulant 126a, 126b.The inside 122c of insulant 126a, 126b sealing pipe 122, and suspention filament 124 is in the inside of pipe 122 122c.In one embodiment, the air of the inner 122c that can find time is to form vacuum environment.In another embodiment, the inside 122c of pipe 122 can insert rare gas element.
Filament 124 comprises crooked border terminal part 124a, 124b, and insulant 126a, 126b are passed through in its extension, and insulant 126a, 126b are electrically insulated border terminal part 124a, the 124b of bending and pipe 122 and PVD target 110.Curved boundaries terminal part 124a, the 124b of filament 124 end at the outside, to form filament terminal or filament lead 125a, 125b.Filament lead 125a, 125b can connect filament 124 to supervision instrument described later.
Among a specific embodiment, pipe 122 can utilize with PVD target 110 identical materials and constitute.The diameter of pipe 122 must be enough little, so that its position is enough near lower surface 114, makes PVD target 110 when using fully, and pipe 122 still can not pass PVD target 110.For example, in one embodiment, the diameter of pipe 122 can be 0.5mm.
Typically, filament 124 is to use with PVD target 110 identical materials and constitutes, and in another embodiment, filament 124 can use the material that is different from PVD target 110 to constitute, and PVD target 110 can not influence the sedimentary result of physical vapor.In one embodiment, the diameter of filament 124 is about 0.2mm.
Insulant 126a, 126b are constituting by be electrically insulated material or these materials.In one embodiment, insulant 126a, 126b are by pottery or aluminum oxide (Al
2O
3) constitute.
Filament detector 120 is as sensor or send the element of signal, when the material of PVD target 110 is used and is reduced to specified quantitative, sends indication information, with the terminal point in work-ing life of representing PVD target material structure 100.When the amount of PVD target material structure 100 is lower than this specified quantitative and still continues to use (the PVD target excessively uses), may cause the perforation (perforation) of PVD target 110 and system discharge (arcing) so that cause that output reduces, the problem of PVD system or instrument damage and safety.Among PVD target material structure 100, use filament detector 120 can make the maximization in work-ing life of PVD target 110, and can accurately and automatically detect when should replace PVD target material structure 100, and then prevent the associated problem of above-mentioned target.
The feature or the purposes of filament detector 120 are, can utilize the watching device 330 (Fig. 5) on-the-spot (in-situ) of the filament 124 that is connected in filament detector 120 to monitor.In one embodiment, the part of the filament 124 that is used for monitoring can be the resistance or the impedance of filament 124, and watching device 330 can be ohmmeter (ohmmeter).For example, when the PVD target material structure was brought into use among the PVD process reaction room, the resistance or the impedance that are monitored filament 124 by watching device 330 were an initial value.When PVD target 110 corrodes in the PVD processing procedure, breaking to make up to pipe 122 is suspended to pipe 122 filaments 124 and is exposed in the PVD processing environment, thereby makes plasma when carrying out sputter (if) contact and corrode filament 124.At this moment, the resistance of filament 124 or impedance meeting are changed by initial value, and expression PVD target material structure 100 has reached the use terminal point.At this terminal point, PVD target 110 residual amounts can be the predetermined per-cent of PVD target 110 original weights, and for example, in one embodiment, when filament 124 began to expose, PVD target 110 residual amounts were 0.5% original vol.When target further when the PVD process reaction room uses, PVD target 110 and filament 124 can continue to corrode up to filament 124 fractures.At this moment, because filament 124 becomes open circuit, so resistance value or impedance meeting change again, this expression PVD target material structure 100 has reached it and has used terminal point.Use previous example, when filament 124 fractures, PVD target 110 residual amounts are approximately 0.2% to 0.1% original vol.When receiving the information that resistance for the second time or impedance change, can utilize the technician manually to stop the operation of PVD process system or instrument, or send a signal to PVD process system or the instrument controller of this instrument (or operate) by watching device 330, make its automatic shut-down operation.
Please refer to Fig. 3, it shows the sectional view of the PVD target material structure 100 ' of another specific embodiment.PVD target material structure 100 ' comprises above-mentioned target 110 (being made of the raw material of wanting) and the electrode detector 120 ' of consuming, and it embeds the lower surface 114 of target 110.Except replace filament 124 with two separations and electrode of opposite 124a ', 124b ', electrode detector 120 ' is identical with the filament detector 120 of the foregoing description, electrode 124a ', 124b ' comprise border terminal part 124aa, 124bb, insulant 126a, 126b are passed through in its extension, border terminal part 124aa, 124bb end at the outside and form filament lead 125a ', 125b ', and filament lead 125a ', 125b ' can make electrode 124a ', 124b ' engage (as shown in Figure 5) with aforesaid watching device 330.
In operating aspect, when the pipe 122 of electrode detector 120 ' broke, electrode 124a ', the 124b ' of electrode detector 120 ' can detect the electric current that is produced by the ion in the plasma that enters pipe.In this embodiment, watching device or the instrument that is connected in electrode 124a ', 124b ' can be current measuring device or instrument.
Fig. 4 is the sectional view of the PVD target material structure 200 of another specific embodiment.PVD target material structure 200 comprises target 210 and the rare gas element detector 220 that is made of raw material suitable in the foregoing description, and it embeds the lower surface 214 of target 210.
Rare gas element detector 220 comprises the pipe 222 with opening end 222a, 222b, pipe 222 can with the identical pipe of embodiment shown in Fig. 2 A, Fig. 2 B.Opening end 222a, the 222b of pipe 222 can be by sealing material 226 airtight or sealings, above-mentioned sealing material 226 for example utilizes connector identical with pipe 222 or that other materials that are fit to form, pipe 222 can be inserted rare gas element 224, helium (He) for example, it can not influence the result of physical vapor deposition manufacture process.
When carrying out the PVD processing procedure, the loss that gas sensing device 430 (Fig. 6) can be detected rare gas element 224 goes out, with field monitor PVD target material structure 200.In the processing procedure of PVD target 210 at PVD, rare gas element 224 can be stayed among the pipe 222 interference-free, and for example the isoionic external force of sputter is broken pipe 222 in the PVD processing procedure.At this moment, the rare gas element of inserting in the pipe 222 224 can go out in loss, makes gas sensing device 430 can detect rare gas element 224.The method for detecting of gas sensing device 430 can be optical emission spectroscopy (OES), rga (RGA) or other methods that is fit to.In one embodiment, but rare gas element detector 220 can make the PVD target 210 of PVD target material structure 200 be reduced to 0.5% of its usage quantity.
Therefore, as sensor operation, be used and when being reduced to specified quantitative, be used for representing the terminal point in the work-ing life of PVD target material structure 200 at the material of PVD target 210 with rare gas element detector 220.
In another specific embodiment, can utilize other material to replace rare gas element in the pipe 222 of inserting rare gas element detector 220, above-mentioned substance can not have influence on the result of PVD.This material can be can evaporate in being exposed to the PVD processing procedure, and the solid or the liquid substance that can be detected in successive process.Above-mentioned solid matter can be the dusty material that form " coating material " field that is recited in Figure 16 is enumerated, among the form of Figure 16 at enumerating some concrete materials that can not have influence on the PVD processing procedure respectively in various " target material " field.Liquid substance can be the rare gas element (for example helium) of liquid state, and it can be injected among the pipe.When inserting liquid, the diameter of pipe for example is about 0.03mm.
Above-mentioned PVD target material structure 100,100 ', 200 comprises single tubulose filament detector 120, electrode detector 120 ', rare gas element detector 220 respectively.In another specific embodiment, the PVD target material structure can comprise a plurality of tubulose detectors, and it is distributed in the PVD target material, is preferably to be distributed in easily erosive position (Fig. 7 A) of target.Distribute a plurality of tubulose detectors in the PVD target, can increase the homogeneity of detecting and can detect the partial corrosion of target.Fig. 7 A and Fig. 7 B show the PVD target material structure 500,500 ' of two specific embodiments, comprise two or more a plurality of tubulose detector 520,520 ' (length is less than or equal to 4cm respectively), its distribution also is embedded in PVD target 510,510 ' lower surface 514,514 '.Shown in Fig. 7 A, a plurality of tubulose detectors 520 can be distributed in whole PVD target 510 radially, and separate.Shown in Fig. 7 B, a plurality of tubulose detectors 520 ' can be distributed in whole PVD target 510 ' radially, so that a plurality of tubulose detector 520 ' is engaged with each other in the center of PVD target 510 '.
Shown in Fig. 8 A and Fig. 8 B, in some specific embodiments, tubulose detector 620 can be embedded in the lower surface 614 of PVD target 610, makes pipe 622 flush with the lower surface 614 of PVD target 610 or pipe 622 slightly is depressed in the lower surface 614 (and target base plate 650 can be made of copper (Cu), for example Cu-Zn alloy or any suitable material) of PVD target 610.Shown in Fig. 8 C, in one embodiment, this can utilize and form PVD target 610 with as the raw material member 610.1 that is made of the material (for example tantalum) that is suitable for and by the interface members 610.2 of boundary material (for example titanium) formation.The surface of the vicinity of raw material member and interface members 610.1 and 610.2 can provide corresponding pipe to receive groove 611.1 and 611.2, its size and be shaped as the part that can receive pipe 622.Pipe 622 places pipe to receive in the groove 611.1 and 611.2, and utilize the hot press step to make raw material member and interface members 610.1 and 610.2, and pipe 622 is bonded together with target base plate 650, above-mentioned hot press step is to be enough to make raw material member and interface members 610.1 and 610.2, and carries out under the pressure that is bonded together to physical property each other of pipe 622 and target base plate 650 and the temperature.Particularly, pressure and temperature are to look the raw material of the material of base plate, target and engaging time and determine.For example (being example with copper soleplate and tantalum raw material for example), the temperature of use and pressure are respectively about 400 ℃ (slightly greater than 1083 ℃ of the fusing points of 1/3 bronze medal) and about 13000psi.In certain embodiments, can among the pipe reception groove 611.2 of interface members 610.2, thin metal foil sheet 610.3 be set.Shown in Fig. 8 D, tinsel 610.3 can be used as barrier layer, enters the zone and the raw material member 610.1 of the pipe reception groove 611.2 of pipe 622 in order to the atomic migration that prevents interface members 610.2.In another embodiment, tubulose detector 620 ' can partly embed the lower surface 614 ' of PVD target 610 ', makes the top of pipe 622 ' be higher than the lower surface 614 ' of PVD target 610 ' slightly, shown in Fig. 8 B.Target base plate 650 ' among the present embodiment comprises depression 660, protrudes in the part of pipe 622 ' of the lower surface 614 ' of PVD target 610 ' in order to reception, so that the lower surface 614 ' of PVD target 610 ' can be arranged on the target base plate 650 '.
The pipe of tubulose detector can be made into any shape that is fit to and is suitable for, and pipe can have outside surface and internal surface, and has identical or different section shape.Fig. 9 A to Fig. 9 F is the pipe stereographic map of the tubulose detector of various specific embodiments.Fig. 9 A shows to have the outside surface of circular section segment and the pipe 700a of internal surface 710a, 720a.Fig. 9 B shows to have the outside surface of square profile and the pipe 700b of internal surface 710b, 720b.Fig. 9 C shows the pipe 700c of the internal surface 720c of outside surface 710c with square profile and circular section segment.Fig. 9 D shows the pipe 700d of the internal surface 720d of outside surface 710d with circular section segment and triangular cross-section.Fig. 9 E shows the pipe 700e of the internal surface 720e of outside surface 710e with circular section segment and square profile.Fig. 9 F shows the pipe 700f of the internal surface 720f of outside surface 710f with square profile and triangular cross-section.The outside surface of pipe and internal surface can be other section shapes such as rectangle, ellipse for example.
Please refer to Figure 14, it shows the stereographic map of the PVD target material structure of another specific embodiment, represents the PVD target material structure with symbol " 800 ".PVD target material structure 800 comprises above-mentioned consumable PVD target 810 (being made of the raw material of wanting) and detecting layer 820, and it is located at the bottom surface 814 in abutting connection with PVD target 810.Among the embodiment of Figure 14, detecting layer 820 can be coupled to base plate 850 with PVD target material structure 800.
Figure 15 is the stereographic map of the PVD target material structure of another specific embodiment, represents the PVD target material structure with symbol " 800 ' ".Except additionally adding one deck target material layer 830 for 820 times at the detecting layer, PVD target material structure 800 ' is identical with PVD target material structure 800 shown in Figure 14.Among the embodiment of Figure 15, target material layer 830 is coupled to PVD target material structure 800 ' on the base plate 850.
Among Figure 14 and Figure 15, detecting layer 820 is to be made of material different with the PVD target and that can not have influence on the PVD process results.Figure 16 shows a form, and it is at the material of the concrete detecting layer of enumerating concrete target material.
In the PVD processing procedure, when the detecting layer 820 of plasma bombardment PVD target material structure 800 or 800 ', detecting layer 820 detects gas, and this gas also can obtain by OES, RGA or other similar approach field monitors and detecting.
PVD target material structure 800 or the decision of 800 ' endpoint detecting also can get by increasing two or more detecting layers detecting that are made of differing materials.Therefore, when plasma bombardment the first layer detecting layer, can show first residual quantity of the target material that stays, then when one deck under the plasma bombardment is detected layer, can show the follow-up residual quantity of the target material that stays, it is less than the first previous residual quantity.The additional layer that can optionally increase other materials is to provide the material residual quantity of additional layer.
The PVD target material structure can contain or not contain the target base plate.PVD process system and equipment can not use the PVD target material structure under the situation of modification and/or change hardware significantly.Moreover the PVD target material structure can be used in different magnetic PVD systems, and it for example comprises capacitive couplings plasma (CCP) and induction type coupling plasma (ICP) system etc.PVD target of the present invention also can be used for various PVD power systems, and it includes but not limited to DC power system, alternating current power system and radio frequency power system.
Another embodiment is the method for the pipe of manufacturing tubular target equipment structure.Figure 17 A is the flow chart of steps of the method for making pipe of demonstration first specific embodiment.In the step 901, provide mould/extrusion equipment 950 (Figure 18 A), it comprises outer mold member and inner mold member 951,952 that concentric(al) circles is provided with.Outer mold member and inner mold member the 951, the 952nd are made by the mechanically resistant material of the metal, metal alloy and/or the metallic substance that are applicable to extruding and/or casting.The material that is applicable to mold component can include but not limited to stupalith, polymer materials, metallic substance and combination thereof.The internal surface 951a of the outer mold member 951 of mould/extrusion equipment 950 is in order to the outside surface of formation pipe, and the outside surface 952a of the inner mold member 952 of mould/extrusion equipment 950 is in order to form the internal surface of pipe.Among the embodiment of Figure 18 A, the outer mold member 951 of mould/extrusion equipment 950 has circular cross-sectional shape, and the inner mold member 952 of mould/extrusion equipment 950 also has circular cross-sectional shape.Such mould/extrusion equipment can be used to make the pipe that shows as Fig. 9 A.The outer mold member 951 of mould/extrusion equipment 950 and inner mold member 952 can be used to make the shape of wanting through after the suitable design, for example comprise the pipe shown in Fig. 9 B to Fig. 9 F.
Refer again to Figure 17 A, the step 902 of this method comprises the material of wanting via space 953 extruding (extrude) of definition between the outer mold member 951 of mould/extrusion equipment 950 and the inner mold member 952.Extruding can be used cold or hot-extrusion method is finished.In another embodiment, the step 902 of method comprises the material of wanting via space 953 casting (cast) of definition between the outer mold member 951 of mould/extrusion equipment 950 and the inner mold member 952.The tubing that casting can be wanted by fusing is poured the material of this fusing into then or is injected among the space 953 of definition between the outer mold member 951 of mould/extruding 950 and the inner mold member 952.If tubing is to utilize the casting mode to finish in step 902, next step 903 is after the tubing cooling of fusing, and pipe is removed from mould/extrusion equipment 950.
Figure 17 B is the flow chart of steps of the method for making pipe of demonstration second specific embodiment.In the step 911, provide a die apparatus 960 (Figure 18 B), it comprises the mold component 961 of plug (mandrel) analogue.This mold component 961 is to be made by the mechanically resistant material that is fit to be formed at PVD or electrochemical plating metal, metal alloy and/or the metallic substance of mold component 961 tops.The material that is applicable to mold component can include but not limited to stupalith, polymer materials, metallic substance and combination thereof.The outside surface 961a of the mold component 961 of die apparatus 960 has circular cross-sectional shape, and such die apparatus can be used to make the pipe that shows as Fig. 9 A.The mold component 961 of die apparatus 960 can be used to make the shape of wanting through after the suitable design, for example comprises the pipe shown in Fig. 9 B to Fig. 9 F.
Refer again to Figure 17 B, the step 912 of method comprises that the tubing wanted of deposition is on the outside surface 962 of mold component 961, till the film thickness that obtains wanting (wall thickness of pipe).Sedimentary step can use the mode of electrochemical plating (ECP) for example or PVD to form.In step 913, the mold component 961 of plug analogue is separated from one another with pipe.In one embodiment, isolating mode can be removed the mold component of plug analogue with the method for physical property as shown in figure 10 by pipe, in another specific embodiment, can adopt the method for chemical with etching reagent mold component to be separated with pipe.
Figure 19 is the flow chart of steps of the method for making pipe of demonstration the 3rd specific embodiment.In the method for making pipe of the 3rd specific embodiment, pipe is to be made with block fabrication steps.In step 921, form a plurality of through holes 941 among the block of the tubing of wanting 940, shown in Figure 11 A, the internal surface of a plurality of pipes of a plurality of through hole 941 definition, in step 922, the block of tubing is cut off or be partitioned into a plurality of isolating pipes 942, shown in Figure 11 B, each pipe 942 comprises a through hole 941.Through hole 941 can utilize methods such as traditional laser, high pressure water, wet etching or dry etching to form.Can use traditional laser, high pressure water or cut mechanically method that blocky tubing 940 is cut off or be partitioned into isolating pipe.
Figure 20 is the flow chart of steps of the method for making pipe of demonstration the 4th specific embodiment.In the step 931, provide the ductility thin plate 980,980 ' of the tubing of wanting, in the step 932, form the pipe 981,981 ' of the shape of wanting by thin plate 980,980 ', shown in Figure 12 A and Figure 13 A.Thin plate 980,980 ' can pass through around corresponding plug shown in Figure 18 B, and forms the shape of the pipe of wanting.Then, in step 933, with pipe 981,981 ' be complementary (matching) and relative (opposing) edge 982,982 ' is engaged with each other together, to finish pipe 981,981 ', shown in Figure 12 B and Figure 13 B.The method that engages for example can use welding process (welding) to finish.
In another embodiment of the present invention, be used for detecting the PVD target material structure work-ing life terminal point system.The system that Fig. 5 shows represents that with symbol " 300 " system 300 comprises PVD process reaction room 310; As Fig. 2 A, Fig. 2 B and PVD target material structure 320 shown in Figure 3, it is arranged among the PVD process reaction room 310; And watching device 330, it is connected in PVD target material structure 320, in order to the filament of field monitor PVD target material structure 320 or the state of electrode detector combination 340.
Fig. 6 show another specific embodiment the PVD target material structure work-ing life terminal point detecting system, it is to represent that with symbol " 400 " system 400 comprises PVD process reaction room 410; As Fig. 4, Figure 14 and PVD target material structure 420 shown in Figure 15, it is arranged among the PVD process reaction room 410; And gas sensing device 430, in order to the detecting layer 440 of field monitor and detecting rare gas element detector or PVD target material structure 420.
Being simply described as follows of symbol in the accompanying drawing:
100,100 ', 200:PVD target material structure
110,210,510,510 ', 610,610 ': the PVD target
112: reaction surface
114: lower surface
116: sidewall surfaces
124: filament
124a ', 124b ': electrode
120: the filament detector
122,222,622,622 ': pipe
122c: the inside of pipe
224: inert gas
124a, 124b, 124aa, 124bb: border terminal part
125a, 125b, 125a ', 125b ': filament lead
126a, 126b: insulant
122a, 122b, 222a, 222b: openend
226: encapsulant
300,400: detecting system
310,410: reative cell
320,420,500,500 ': the PVD target material structure
330: monitoring arrangement
430: the gas sensing device
340: the detector combination
440: the detecting layer
514,514 ', 614,614 ': lower surface
520,520 ', 620,620 ': the tubulose detector
650,650 ': the target base plate
660: depression
610.1: the raw material member
610.2: interface members
610.3: tinsel
611.1,611.2: groove
700a, 700b, 700c, 700d, 700e, 700f: pipe
710a, 710b, 710c, 710d, 710e, 710f: outside surface
720a, 720b, 720c, 720d, 720e, 720f: internal surface
940: tubing
941: through hole
942: pipe
980,980 ': thin plate
981,981 ': pipe
982,982 ': the edge
800,800 ': the PVD target material structure
The 810:PVD target
820: the detecting layer
814: bottom surface
850: base plate
830: the target material layer
950: mould/extrusion equipment
951: the outer mold member
952: the inner mold member
953: the space
960: die apparatus
961: mold component
962: outside surface
Claims (15)
1. the slab of an expendable material is characterized in that, the slab of this expendable material comprises:
At least one detector, in order to for the slab of this expendable material near or be reduced to one of this expendable material and both quantitatively sent signal.
2. the slab of expendable material according to claim 1 is characterized in that, this at least one detector comprises:
One enclosure, at least a portion of this enclosure embed among the slab of this expendable material; And
One filamentary element or electrode member are arranged among this enclosure.
3. the slab of expendable material according to claim 2 is characterized in that, this filamentary element or electrode member be by extending among this enclosure, and can be connected to a signal monitor device.
4. the slab of expendable material according to claim 2 is characterized in that, this enclosure is to be made of this expendable material.
5. the slab of expendable material according to claim 1 is characterized in that, this at least one detector comprises:
One enclosure, at least a portion of this enclosure embed among the slab of this expendable material; And
One gas, liquid or solid are arranged among this enclosure.
6. the slab of expendable material according to claim 5 is characterized in that, this gas or liquid are to be made of inert material.
7. the slab of expendable material according to claim 5 is characterized in that, when this gas, liquid or solid are gone out by this enclosure loss, can be obtained by detecting.
8. the slab of expendable material according to claim 7 is characterized in that, when detecting this gas, liquid or solid, show this expendable material slab residual quantity near or reached that this had been both quantitative.
9. the slab of expendable material according to claim 1 is characterized in that, this at least one detector comprises:
One second material layer, its composition is different from this expendable material, and is arranged on the slab of expendable material in abutting connection with ground, can be obtained by detecting during this second material layer aerification.
10. the slab of expendable material according to claim 9 is characterized in that, when detecting this second material layer of aerification, show this expendable material slab residual quantity near or reached that this had been both quantitative.
11. the slab of expendable material according to claim 1 is characterized in that, the life-span of sending the slab of this expendable material of signal indication has reached terminal point.
12. the slab of expendable material according to claim 5 is characterized in that, the slab of this expendable material comprises a target, is used in the physical vapor deposition processing procedure, and the composition of this gas, liquid or solid can not influence this physical vapor deposition processing procedure.
13. the slab of expendable material according to claim 9 is characterized in that, the slab of this expendable material comprises a target, is used in the physical vapor deposition processing procedure, and the composition of this second material layer can not influence this physical vapor deposition processing procedure.
14. a physical vapor deposition target material is characterized in that, this physical vapor deposition target material comprises:
The slab of one expendable material; And
At least one detector, in order to for the slab of this expendable material near or be reduced to one of this expendable material and both quantitatively sent signal.
15. physical vapor deposition target material according to claim 14 is characterized in that, this at least one detector comprises a filament, electrode of opposite, a detecting layer, a gas, a liquid or a solid, and it can send signal.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US72039005P | 2005-09-26 | 2005-09-26 | |
| US60/720,390 | 2005-09-26 | ||
| US60/728,724 | 2005-10-20 | ||
| US11/427,602 | 2006-06-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1982498A true CN1982498A (en) | 2007-06-20 |
| CN100529160C CN100529160C (en) | 2009-08-19 |
Family
ID=38165332
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101523312A Active CN100560784C (en) | 2005-09-26 | 2006-09-26 | The system and method in the expendable material slab life-span that the detecting process work bench uses |
| CNB2006101523346A Active CN100529160C (en) | 2005-09-26 | 2006-09-26 | Thick plate capable of consuming material and physical gas phase sedimentation target material |
| CNB2006101523331A Active CN100476018C (en) | 2005-09-26 | 2006-09-26 | Method of forming indicator |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101523312A Active CN100560784C (en) | 2005-09-26 | 2006-09-26 | The system and method in the expendable material slab life-span that the detecting process work bench uses |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101523331A Active CN100476018C (en) | 2005-09-26 | 2006-09-26 | Method of forming indicator |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN100560784C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105734507A (en) * | 2016-04-05 | 2016-07-06 | 基迈克材料科技（苏州）有限公司 | Fine grain nickel alloy rotary target capable of achieving even film forming and hot extrusion optimizing preparation method thereof |
| CN105861999A (en) * | 2016-04-05 | 2016-08-17 | 基迈克材料科技（苏州）有限公司 | High-purity fine-grain metallic nickel hot extrusion rotating target material |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009245988A (en) * | 2008-03-28 | 2009-10-22 | Tokyo Electron Ltd | Plasma processing apparatus, chamber internal part, and method of detecting longevity of chamber internal part |
| CN103088304A (en) * | 2011-10-28 | 2013-05-08 | 光洋应用材料科技股份有限公司 | Sputtering target with warning function |
| CN103594309A (en) * | 2012-08-14 | 2014-02-19 | 无锡华润上华科技有限公司 | An oxide etching method and apparatus |
| CN102994970B (en) * | 2012-11-16 | 2014-12-10 | 京东方科技集团股份有限公司 | Target usage detection system and method |
| CN106032565A (en) * | 2015-03-11 | 2016-10-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Target material assembly and physical vapor deposition equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08176808A (en) * | 1993-04-28 | 1996-07-09 | Japan Energy Corp | Sputtering target with life alarming function |
| US6638402B2 (en) * | 2001-06-05 | 2003-10-28 | Praxair S.T. Technology, Inc. | Ring-type sputtering target |
-
2006
- 2006-09-26 CN CNB2006101523312A patent/CN100560784C/en active Active
- 2006-09-26 CN CNB2006101523346A patent/CN100529160C/en active Active
- 2006-09-26 CN CNB2006101523331A patent/CN100476018C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105734507A (en) * | 2016-04-05 | 2016-07-06 | 基迈克材料科技（苏州）有限公司 | Fine grain nickel alloy rotary target capable of achieving even film forming and hot extrusion optimizing preparation method thereof |
| CN105861999A (en) * | 2016-04-05 | 2016-08-17 | 基迈克材料科技（苏州）有限公司 | High-purity fine-grain metallic nickel hot extrusion rotating target material |
| CN105734507B (en) * | 2016-04-05 | 2018-06-19 | 基迈克材料科技（苏州）有限公司 | Form a film uniform fine grain nickel alloy rotary target material and its hot extrusion optimization preparation method |
| CN105861999B (en) * | 2016-04-05 | 2018-08-07 | 基迈克材料科技（苏州）有限公司 | High-purity fine grain metallic nickel hot extrusion rotary target material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100529160C (en) | 2009-08-19 |
| CN100560784C (en) | 2009-11-18 |
| CN100476018C (en) | 2009-04-08 |
| CN1982500A (en) | 2007-06-20 |
| CN1982497A (en) | 2007-06-20 |
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