CN1979794A - Chip bearing apparatus - Google Patents
Chip bearing apparatus Download PDFInfo
- Publication number
- CN1979794A CN1979794A CN 200510129764 CN200510129764A CN1979794A CN 1979794 A CN1979794 A CN 1979794A CN 200510129764 CN200510129764 CN 200510129764 CN 200510129764 A CN200510129764 A CN 200510129764A CN 1979794 A CN1979794 A CN 1979794A
- Authority
- CN
- China
- Prior art keywords
- bearing apparatus
- chip bearing
- dead ring
- conductor component
- insulating disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 22
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 pottery Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Being setup inside dry type etching reaction chamber, the disclosed device is in use for load bearing wafer. The device is at least composed of insulating disc, conductor component, and insulating ring. The insulating disc possesses groove, and bulge. The conductor component is placed in the groove, and the insulating ring covers at least top side of the bulge exposed.
Description
Technical field
The present invention relates to a kind of semiconductor manufacturing equipment, particularly relate to a kind of chip bearing apparatus that is used for the dry-etching reative cell.
Background technology
In semiconductor technology, in order to remove Si oxide or the metal oxide on the semiconductor wafer, with the reduction contact impedance, and the smooth degree of increase wafer surface, in manufacture process, with the argon gas source of plasma most likely, carry out dry etch process.
The existing chip bearing apparatus that is arranged in the plasma etching reative cell is made up of insulating disc and iron pan, and wherein, iron pan is to be embedded in this insulating disc, and wafer promptly is positioned on the iron pan, and covers the intersection of iron pan and insulating disc.
In plasma etch process, ion bombardment is normally with vertical direction, be incident in the surface of wafer equably, but at the edge of wafer, then can attract the bigger ion of density with non-perpendicular angle incident.Because the insulating disc in the chip bearing apparatus, its edge is the turnover (corner) of a bending, therefore, often causes the insulating disc damage easily under the bombardment of ion, and produces many unnecessary particles.The result that insulating disc is impaired, will shorten many its useful life, increase the expenditure of cost, and the generation of these particles may cause also wafer to be polluted, and reduces the rate of finished products of technology.
In addition, for fear of these particle pollution wafers, after the wafer that average every etching is 2000, just must carry out periodic maintenance (periodic maintenance), clean the dry-etching reative cell, not only reduce the utilance (up time) of machine, also can procrastinate the time of the required cost of whole technology.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of chip bearing apparatus exactly, can reduce the number of times of periodic maintenance significantly, increases the utilance of machine, and then reduces manufacturing cost, improves productive rate.
The present invention proposes a kind of chip bearing apparatus, is arranged in the dry-etching reative cell, in order to bearing wafer.This chip bearing apparatus comprises insulating disc, conductor component and dead ring at least.Insulating disc has a groove, and around the protuberance of groove.Conductor component places groove.Dead ring covers the protuberance end face that comes out at least.
According to the described chip bearing apparatus of embodiments of the invention, the surface of above-mentioned dead ring is a plane.And wafer promptly places on the dead ring, and the internal diameter of dead ring is not more than the diameter of wafer.Above-mentioned dead ring is round conductor component.
According to the described chip bearing apparatus of embodiments of the invention, the end face of above-mentioned conductor component for example is the top that is higher than insulating disc, and is not higher than the end face of dead ring.
According to the described chip bearing apparatus of embodiments of the invention, the material of above-mentioned dead ring and insulating disc for example is a pottery.
According to the described chip bearing apparatus of embodiments of the invention, the material of above-mentioned conductor component for example is a titanium.Conductor component from bottom to top can be to comprise a pad portions (pedestal) and a shielding portion (shield).Wherein, the material of pad portions for example is a titanium, and the material of shielding portion for example is a stainless steel.
The present invention is covered on the insulating disc because of the dead ring that adopts horizontal surface, make ion bombardment can not be damaged to insulating disc, not only can reduce the generation of particle, prolong the useful life of insulating disc, can also reduce the frequency of periodic maintenance significantly, increase the utilance of machine, and then save manufacturing cost, increase production efficiency.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 is the generalized section that illustrates the dry-etching reative cell, is provided with a kind of chip bearing apparatus of embodiments of the invention in this dry-etching reative cell.
Fig. 2 is generalized section and the top view that illustrates a kind of chip bearing apparatus of embodiments of the invention.
The simple symbol explanation
100: wafer
110: chip bearing apparatus
120: insulating disc
123: groove
125: protuberance
130: conductor component
133: pad portions
135: shielding portion
140: dead ring
150: the dry-etching reative cell
155: coil
160: radio-frequency power supply
170: ion
Embodiment
Fig. 1 illustrate is the generalized section of dry-etching reative cell, is provided with a kind of chip bearing apparatus of embodiments of the invention in this dry-etching reative cell.Fig. 2 is generalized section and the top view that illustrates a kind of chip bearing apparatus of embodiments of the invention.
Please refer to Fig. 1, this chip bearing apparatus 110 is arranged in the dry-etching reative cell 150, is used for bearing wafer 100.Chip bearing apparatus 110 comprises insulating disc 120, conductor component 130 and dead ring 140.Insulating disc 120 has groove 123, and around the protuberance 125 of groove 123.Conductor component 130 places among the groove 123.Dead ring 140 covers protuberance 125 end faces that come out at least.
The material of insulating disc 120 for example is an insulating material, as quartz, pottery, sapphire, boron nitride or graphite.Groove 123 in the insulating disc 120 equates with the width of conductor component 130 or groove 123 slightly is wider than conductor component 130, and conductor component 130 can be sticked in the groove 123.Conductor component 130 from bottom to top for example is made up of pad portions 133 and shielding portion 135.The material of pad portions 133 for example is a metal, and preferred material is a titanium.The material of shielding portion 135 for example is a metal, as stainless steel.
The surface of dead ring 140 is a plane, covers the protuberance 125 of insulating disc 120, makes the turning point in protuberance 125 outsides be subjected to the protection of dead ring 140.The material of dead ring 140 for example is an insulating material, and as quartz, pottery, sapphire, boron nitride or graphite, preferred material is a pottery, to obtain comparatively uniform in-plane.In one embodiment, the protuberance 125 of dead ring 140 except covering insulating disc 120, dead ring 140 can also be to protrude in protuberance 125.
Please refer to Fig. 2, the internal diameter of dead ring 140 for example is the diameter less than wafer 100, and the internal diameter of dead ring 140 for example is identical with the diameter of conductor component 130.By the top view of Fig. 2 part as can be seen, the outer margin contour of wafer 100 is greater than the outer rim of conductor component 130, and less than the outer rim of dead ring 140.The end face of conductor component 130 for example is the top a little more than insulating disc 120.Wherein, the end face of conductor component can be end face position with dead ring 140 on same horizontal plane, then wafer 100 promptly places on the end face of conductor component 130 and dead ring 140 (as shown in Figure 2).Dead ring 140 end faces also might be the end faces a little more than conductor component 130, and then wafer 100 just only can touch dead ring 140 end faces.In one embodiment, in order to cooperate the thickness of employed conductor component 130, the thin thickness that the thickness of insulating disc 120 may existing insulating disc some so that dead ring 140 can be arranged on the insulating disc 120, and engage the position of indirect securement dead ring 140 with conductor component 130.
Please refer to Fig. 1, carry out in the dry-etching actual, prior to feeding gases in the dry-etching reative cell 150, and the coil above dry-etching reative cell 150 155 applies bias voltage and makes gas be dissociated into the ion and the electronics of positively charged.Dry-etching reative cell 150 belows are electrically connected with radio-frequency power supply 160, and electronics is attracted earlier on wafer 100 to be assembled, and the surface of wafer 100 is bombarded in the nucleophobic then attraction of ion 170 downwards.This dry etch process also can be on prerinse (pre-c1ean) step that is used in wafer 100 except being used to define the required pattern of technology, to remove the oxide on the wafer 100.
What deserves to be mentioned is, because the present invention covered one deck dead ring 140 on insulating disc 120, and dead ring 140 protrudes in insulating disc 120, therefore, ion 170 bombardments are (end face of dead ring 140) in one plane, rather than bombardment is on the turning point of the bending of insulating disc 120.Compare with known technology, interparticle bonding is not easy to be interrupted on the horizontal surface, so can reduce the chance that particle produces in certain degree ground.Not only can avoid polluting wafer 100, improve process yield, can also prevent that insulating disc 120 from being damaged, reach the prolongation insulating disc effect in 120 useful lifes, reduce manufacturing cost.Thus, the number of times of periodic maintenance is also reduced significantly, and then improves the utilance of machine, reaches the target that increases productive rate.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with claim the person of being defined be as the criterion.
Claims (11)
1. a chip bearing apparatus is arranged in the dry-etching reative cell, and in order to bearing wafer, this chip bearing apparatus comprises at least:
Insulating disc, this insulating disc has groove, and around the protuberance of this groove;
Conductor component places this groove; And
Dead ring covers this protuberance end face that comes out at least.
2. chip bearing apparatus as claimed in claim 1, wherein the surface of this dead ring is a plane.
3. chip bearing apparatus as claimed in claim 1, wherein this wafer places on this dead ring, and the internal diameter of this dead ring is not more than the diameter of this wafer.
4. chip bearing apparatus as claimed in claim 1, wherein the end face of this conductor component is higher than the top of this insulating disc, and the end face of this conductor component is not higher than the end face of this dead ring.
5. chip bearing apparatus as claimed in claim 1, wherein this dead ring is around this conductor component.
6. chip bearing apparatus as claimed in claim 1, wherein the material of this dead ring comprises pottery.
7. chip bearing apparatus as claimed in claim 1, wherein the material of this conductor component comprises titanium.
8. chip bearing apparatus as claimed in claim 1, wherein this conductor component from bottom to top comprises pad portions and shielding portion.
9. chip bearing apparatus as claimed in claim 8, wherein the material of this pad portions comprises titanium.
10. chip bearing apparatus as claimed in claim 8, wherein the material of this shielding portion comprises stainless steel.
11. chip bearing apparatus as claimed in claim 1, wherein the material of this insulating disc comprises pottery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101297641A CN100481372C (en) | 2005-12-05 | 2005-12-05 | Chip bearing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101297641A CN100481372C (en) | 2005-12-05 | 2005-12-05 | Chip bearing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1979794A true CN1979794A (en) | 2007-06-13 |
| CN100481372C CN100481372C (en) | 2009-04-22 |
Family
ID=38130900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101297641A Expired - Fee Related CN100481372C (en) | 2005-12-05 | 2005-12-05 | Chip bearing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100481372C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158717A (en) * | 2015-03-31 | 2016-11-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Mechanical chuck and semiconductor processing equipment |
-
2005
- 2005-12-05 CN CNB2005101297641A patent/CN100481372C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158717A (en) * | 2015-03-31 | 2016-11-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Mechanical chuck and semiconductor processing equipment |
| CN106158717B (en) * | 2015-03-31 | 2019-08-23 | 北京北方华创微电子装备有限公司 | Mechanical chuck and semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100481372C (en) | 2009-04-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090422 Termination date: 20101205 |