CN1971890A - Preparation method of heat radiator - Google Patents
Preparation method of heat radiator Download PDFInfo
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- CN1971890A CN1971890A CN 200510101803 CN200510101803A CN1971890A CN 1971890 A CN1971890 A CN 1971890A CN 200510101803 CN200510101803 CN 200510101803 CN 200510101803 A CN200510101803 A CN 200510101803A CN 1971890 A CN1971890 A CN 1971890A
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- heat abstractor
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Abstract
This invention provides one dissipation device process method, which comprises the following steps: providing one dissipation device base with one surface; processing the device for deactivation to form one deactivation layer on one surface of device; removing the surface deactivation layer in environment without oxidation; forming one catalyze layer on the surface; adopting chemical gas phase deposition method to grow carbon nanometer to get one dissipation device. This invention process the deactivation to remove one deactivation layer on dissipation surface and to form catalyses to grow carbon nanometer tube.
Description
[technical field]
The present invention relates to a kind of preparation method of heat abstractor, relate in particular to a kind of preparation method who adopts the heat abstractor of carbon nano-tube.
[background technology]
Along with information industry develops rapidly, the data-handling capacity of the inner set heater element of electronic installation (as CPU etc.) is more and more stronger.Yet, follow the lifting of heater element arithmetic speed, the heat of its generation also increases considerably.For the heat that will be produced is discharged rapidly, heater element can be moved under normal working temperature, to guarantee the quality of data processing, storage and transmission, usually on the surface of this heater element one heat abstractor is set, more the matrix of this heat abstractor adopts copper material or aluminium material to make (the copper conductive coefficient is 402W/mK, and the aluminium conductive coefficient is 237W/mK) and forms.But because the contact-making surface and the out-of-flatness of heat abstractor and heater element generally are in contact with one another area less than 2%, it fundamentally influences heater element transmits effect from heat to heat abstractor.So, can be in order to increasing its exposure level between heat abstractor and heater element by increasing the higher thermal interfacial material of a conductive coefficient, thus the heat transfer effect between heater element and heat abstractor improved.
Carbon nano-tube is one of thermal interfacial material of at present tool potentiality.Carbon nano-tube is to find by Japanese scientist's Sumio Iijima professor that it was a kind of hollow tubular thing that is rolled into by graphite linings in 1991, has excellent axial thermal conductivity, and conductive coefficient can reach 20000W/mK.With carbon nano-tube as thermal interface material applications between heater element and heat abstractor, can improve the heat transferred effect between heater element and heat abstractor greatly, thereby improve the heat dispersion of this heat abstractor.
In the prior art,, generally be direct growth one carbon nano pipe array on copper base or aluminium base heat abstractor matrix for obtaining heat abstractor than high cooling efficiency.The formation method of this kind heat abstractor comprises step: a surface that iron, cobalt or Raney nickel is deposited on the heat abstractor matrix; On this catalyst, grow carbon nano pipe array to obtain a heat abstractor by chemical vapour deposition technique again.Yet, because the easy oxidation of heat abstractor matrix, before carbon nano-tube, this heat abstractor matrix can be exposed in the air unavoidably, can form the relatively poor oxide skin(coating) of one deck thermal conductivity at the carbon nano tube growth face like this, the contact heat resistance of this oxide skin(coating) is bigger, and the thermo-contact of feasible carbon nano-tube that grows and heat abstractor matrix is relatively poor, it is unfavorable for the transmission of heat, and then makes that the radiating efficiency of this kind heat abstractor is lower.
In view of this, be necessary to provide a kind of preparation method of heat abstractor, it can provide radiating efficiency preferable heat abstractor.
[summary of the invention]
Below a kind of preparation method of heat abstractor will be described with embodiment, it can provide radiating efficiency preferable heat abstractor.
A kind of preparation method of heat abstractor, it comprises step: a heat abstractor matrix is provided, and it has a surface; This heat abstractor matrix is carried out Passivation Treatment, so that on this surface, form a passivation layer; In oxygen-free environment, remove this lip-deep passivation layer; In oxygen-free environment, on this surface, form a catalyst layer; Adopt chemical vapour deposition technique carbon nano-tube on this catalyst layer, and then obtain a heat abstractor.
Compared with prior art, the preparation method of described heat abstractor, by the heat abstractor matrix is carried out Passivation Treatment, and in oxygen-free environment, remove this heat abstractor one lip-deep passivation layer and on this surface, form catalyst layer with carbon nano-tube, it can effectively prevent the relatively poor oxide skin(coating) of oxidized formation one thermal conductivity in this surface, thereby make carbon nano-tube and heat abstractor matrix have preferable thermo-contact, contact heat resistance is less, and then makes prepared heat abstractor have preferable radiating efficiency.
[description of drawings]
Fig. 1 is the schematic diagram of the heat abstractor matrix that provides of the embodiment of the invention.
Fig. 2 is the embodiment of the invention is formed with a passivation layer at the heat abstractor matrix surface a schematic diagram.
Fig. 3 is the schematic diagram that the embodiment of the invention is removed the heat abstractor matrix of this heat abstractor matrix one lip-deep passivation layer.
Fig. 4 is the embodiment of the invention is formed with a catalyst layer on this heat abstractor matrix one surface a schematic diagram.
Fig. 5 is grow on the catalyst layer schematic diagram of heat abstractor that a carbon nano pipe array is arranged of the embodiment of the invention.
[embodiment]
Below in conjunction with accompanying drawing the embodiment of the invention is described in further detail.
See also Fig. 1 to Fig. 5, the preparation method of heat abstractor that present embodiment provides may further comprise the steps:
See also Fig. 1, a heat abstractor matrix 10 is provided, it has a surface 16.This heat abstractor matrix 10 can select for use copper base material matter and aluminium base material to make.This heat abstractor matrix 10 can comprise a pedestal 12, and some also outward extending radiating fins 14 that forms on these pedestal 12 1 surfaces, and a surface of this pedestal 12 can be positioned at a side or the opposite face on surface 16, and in the present embodiment, this surface is relative with surface 16.In the present embodiment, these some radiating fins 14 are one-body molded with this pedestal 12.Certainly, these some radiating fins 14 can be formed on the pedestal 12 by punching press or welding manner.In addition, the also radiating block of a no radiating fin of this heat abstractor matrix 10.
See also Fig. 2, heat abstractor matrix 10 is carried out Passivation Treatment, so that on surface thereof 16, form a passivation layer 20.Concrete steps can be: heat abstractor matrix 10 is immersed fully in the mixed solution of 0.2 grams per liter chromic acid and 0.2 grams per liter phosphoric acid, 60～90 degrees centigrade (℃) soaked 10～30 seconds under the temperature conditions, make heat abstractor matrix 10 surfaces form passivation layers 20.Certainly, also can tightly carry out Passivation Treatment so that form a passivation layer 20 thereon to this surface 16.The Passivation Treatment of this step can prevent effectively that heat abstractor matrix 10 is oxidized in air.
See also Fig. 3, in oxygen-free environment, remove the passivation layer 20 on this surface 16.Concrete steps can be: this heat abstractor matrix 10 is placed a vacuum cavity, and under inert gas environment, the passivation layer 20 on this surface 16 is removed in etching.Described etching method can be selected methods such as reactive ion etching, electric paste etching or wet etching for use.Described inert gas can be helium, neon or argon gas etc.This step is carried out in the vacuum cavity oxygen-free environment, can prevent that this surface 16 is oxidized.
See also Fig. 4, in oxygen-free environment, on this surface 16, form a catalyst layer 30.Wherein, this catalyst layer 30 can adopt vapour deposition method or sputtering method to form, and adopts sputtering method in the present embodiment.The material of described catalyst layer 30 can be selected nickel, iron, cobalt and alloy thereof for use, selects iron in the present embodiment for use.The temperature that this catalyst layer 30 forms is preferably 30 ℃ and following, and the time is 2～4 minutes.The thickness of the catalyst layer that forms 30 is 20～50 nanometers.
See also Fig. 5, adopt chemical vapour deposition technique carbon nano-tube on this catalyst layer 30.Concrete steps can be: at first, the heat abstractor matrix 10 that will have catalyst layer 30 places reative cell, feeds protective gas and be heated to a carbon nano tube growth temperature in reative cell.Wherein, this protective gas can be inert gas or nitrogen such as argon gas, helium, selects argon gas in the present embodiment for use.This carbon nano tube growth temperature is generally 500～700 ℃.Then, in reative cell, feed carbon source gas and carry out the chemical vapor deposition growth carbon nano-tube, grow carbon nano pipe array 40 from catalyst layer 30; And then can obtain a heat abstractor 60.Wherein, carbon source gas is hydrocarbon, comprises acetylene, ethene etc., selects acetylene in the present embodiment for use.Preferably, institute's carbon nanometer tube array growing is basically perpendicular to this surface 16.
Certainly, the preparation method of heat abstractor that present embodiment provides 60 can further comprise: insert the heat conduction powder between the carbon nano-tube of institute's carbon nanometer tube array growing 40.This heat conduction powder is optional with silver, zinc oxide, boron nitride, aluminium oxide and composition thereof.This heat conduction powder has good thermal conduction characteristic, and it can help the lifting of heat-diffusing efficiency of heat abstractor.
In addition, be appreciated that also and can on the surface of other surface of matrix 10 or radiating fin 14, adopt the said method carbon nano-tube, to increase the radiating effect of this heat abstractor 60.
Present embodiment carries out Passivation Treatment by the matrix 10 with heat abstractor 60, and in oxygen-free environment, remove passivation layer on the surface 16 of this matrix, and on this surface 16, form catalyst layer 30 with carbon nano-tube, it can prevent effectively that this surface 16 is oxidized and form the relatively poor oxide skin(coating) of a thermal conductivity, thereby make carbon nanometer tube array growing 40 and heat abstractor matrix 10 have preferable thermo-contact, contact heat resistance is less, and then makes prepared heat abstractor 60 have better cooling efficiency.And, further between the carbon nano-tube of carbon nano pipe array 40, fill the heat conduction powder, it more helps improving the radiating efficiency of heat abstractor.
Claims (11)
1. the preparation method of a heat abstractor may further comprise the steps:
One heat abstractor matrix is provided, and it has a surface;
This heat abstractor matrix is carried out Passivation Treatment, so that on this surface, form a passivation layer;
In oxygen-free environment, remove this lip-deep passivation layer;
In oxygen-free environment, on this surface, form a catalyst layer;
Adopt chemical vapour deposition technique carbon nano-tube on this catalyst layer, and then obtain a heat abstractor.
2. the preparation method of heat abstractor according to claim 1 is characterized in that the material of this heat abstractor matrix is selected from copper base and aluminium base material.
3. the preparation method of heat abstractor according to claim 1 is characterized in that this heat abstractor matrix comprises a pedestal, and somely forms and outward extending radiating fins on a surface of this pedestal.
4. the preparation method of heat abstractor according to claim 1 is characterized in that this heat abstractor matrix is a radiating block.
5. the preparation method of heat abstractor according to claim 1 is characterized in that described Passivation Treatment comprises
Step: the heat abstractor matrix is placed the mixed solution of chromic acid and phosphoric acid, under 60～90 degree celsius temperature conditions, soaked 10～30 seconds.
6. the preparation method of heat abstractor according to claim 1 is characterized in that the removal method of described passivation layer is selected from reactive ion etching, electric paste etching and wet process.
7. the preparation method of heat abstractor according to claim 1 is characterized in that the formation method of described catalyst layer is selected from vapour deposition method and sputtering method.
8. the preparation method of heat abstractor according to claim 1 is characterized in that material chosen from Fe, cobalt, nickel and the alloy thereof of described catalyst layer.
9. the preparation method of heat abstractor according to claim 1 is characterized in that, the thickness range of described catalyst layer is 20～50 rice how.
10. the preparation method of heat abstractor according to claim 1 is characterized in that, further comprises step: insert the heat conduction powder between carbon nano-tube.
11. the preparation method as heat abstractor as described in the claim 11 is characterized in that described heat conduction powder is selected from silver, zinc oxide, boron nitride, aluminium oxide and composition thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101018037A CN100517661C (en) | 2005-11-26 | 2005-11-26 | Preparation method of heat radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101018037A CN100517661C (en) | 2005-11-26 | 2005-11-26 | Preparation method of heat radiator |
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| Publication Number | Publication Date |
|---|---|
| CN1971890A true CN1971890A (en) | 2007-05-30 |
| CN100517661C CN100517661C (en) | 2009-07-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005101018037A Expired - Fee Related CN100517661C (en) | 2005-11-26 | 2005-11-26 | Preparation method of heat radiator |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103378020A (en) * | 2012-04-23 | 2013-10-30 | 新加坡商格罗方德半导体私人有限公司 | Method for forming heat sink with through silicon vias |
| CN103857918A (en) * | 2011-10-31 | 2014-06-11 | 埃地沃兹日本有限公司 | Stationary member and vacuum pump |
| CN109989901A (en) * | 2017-12-29 | 2019-07-09 | 胡芳丽 | A kind of heat-insulating type electric-motor pump |
| CN112566459A (en) * | 2020-11-30 | 2021-03-26 | 瑞声科技（南京）有限公司 | Manufacturing method of heat dissipation device and heat dissipation device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6965513B2 (en) * | 2001-12-20 | 2005-11-15 | Intel Corporation | Carbon nanotube thermal interface structures |
| US6891724B2 (en) * | 2002-06-12 | 2005-05-10 | Intel Corporation | Increasing thermal conductivity of thermal interface using carbon nanotubes and CVD |
| US7109581B2 (en) * | 2003-08-25 | 2006-09-19 | Nanoconduction, Inc. | System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler |
-
2005
- 2005-11-26 CN CNB2005101018037A patent/CN100517661C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103857918A (en) * | 2011-10-31 | 2014-06-11 | 埃地沃兹日本有限公司 | Stationary member and vacuum pump |
| CN103857918B (en) * | 2011-10-31 | 2016-08-24 | 埃地沃兹日本有限公司 | Fixed component and vavuum pump |
| US9759233B2 (en) | 2011-10-31 | 2017-09-12 | Edwards Japan Limited | Stator member and vacuum pump |
| CN103378020A (en) * | 2012-04-23 | 2013-10-30 | 新加坡商格罗方德半导体私人有限公司 | Method for forming heat sink with through silicon vias |
| CN109989901A (en) * | 2017-12-29 | 2019-07-09 | 胡芳丽 | A kind of heat-insulating type electric-motor pump |
| CN112566459A (en) * | 2020-11-30 | 2021-03-26 | 瑞声科技（南京）有限公司 | Manufacturing method of heat dissipation device and heat dissipation device |
| CN112566459B (en) * | 2020-11-30 | 2022-01-11 | 瑞声科技（南京）有限公司 | Manufacturing method of heat dissipation device and heat dissipation device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100517661C (en) | 2009-07-22 |
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