CN1971312A - Square crystal lattice 2D photon crystal - Google Patents
Square crystal lattice 2D photon crystal Download PDFInfo
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- CN1971312A CN1971312A CN 200510086975 CN200510086975A CN1971312A CN 1971312 A CN1971312 A CN 1971312A CN 200510086975 CN200510086975 CN 200510086975 CN 200510086975 A CN200510086975 A CN 200510086975A CN 1971312 A CN1971312 A CN 1971312A
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- 239000013078 crystal Substances 0.000 title claims abstract description 39
- 239000003989 dielectric material Substances 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 230000001939 inductive effect Effects 0.000 claims description 6
- 101100433727 Caenorhabditis elegans got-1.2 gene Proteins 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 9
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 abstract description 3
- 239000004038 photonic crystal Substances 0.000 description 17
- 230000007547 defect Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000000003 hoof Anatomy 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
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Abstract
The invention relates to the technique fields of 2-D photons crystals, specially the tetragonal 2-D photons crystals which possess big absolute forbidden band relative value in low frequency range. Differing from the general artificial photons crystals original cells, the original cells are divided into 10*10 square picture element structures which contains dielectric materials with high index of refraction and low index of refraction, the dielectric materials with high and low index of refraction index is distributed in the picture elements of the original cells with definite rules that 1 represents dielectric materials with high index of refraction, 0 represents dielectric materials with low index of refraction. The structures of original cells in the invention fulfill the inversion symmetry. When the lattice constant a is 1 mum, the absolute forbidden band relative value in low frequency range obtained in material background of silicon/air is 13.25 %.
Description
Technical field
The present invention relates to the 2 D photon crystal technical field, particularly in low-frequency range, have the square crystal lattice 2 D photon crystal of very big absolute forbidden band relative value.
Background technology
The frequency forbidden band that photonic crystal exists because of its periodic structure is called forbidden photon band, and (PhotonicBand Gap, PBG), forbidden photon band is the major reason of photonic crystal extensive application.The set-point defective forms microcavity in photonic crystal, can obtain the semiconductor laser of high Q value; Line defect is set forms waveguide, can obtain lossless wide-angle curved waveguide; Photonic crystal also can be used for preparing super prism, negative refractive rate lens etc.The forbidden band of photonic crystal is big more, and can controlled light frequency scope also just wide more, therefore the search for big forbidden band be the research focus in this field always.
Photonic crystal the earliest is that nature evolution in millions of years obtains, as the wing of butterfly, marine se mouse.The photonic crystal of traditional design is geometry symmetric figure that limited several people are known crystalline network and the primitive unit cell (as the circular air column of triangular crystal lattice) as photonic crystal, calculate the band structure of all possible photonic crystal and more various photonic crystals respectively, sum up certain law then empirically to instruct the design effort of photon crystal structure.Cause the degeneracy of energy level as the symmetry of crystal structure, can make being with increase, energy level to move back degeneracy even producing new being with of photonic crystal by the symmetry that reduces crystalline network, material.At present, the bandwidth in the absolute forbidden band of most of two-dimension square lattice photonic crystal is very little, as Physical Review B, proposes in 1992 to obtain 5.7% absolute forbidden band, and the high dielectric material refractive index will reach 4 at least; Obtain a lot of structures by the geometric parameter that changes scatterer in recent years and had considerable absolute forbidden band, but these structures are difficult for preparation because of the scatterer shape is distorted mostly, as Journal of Applied Physics, square scatterer in the tetragonal that proposes in 2001 requires rotation 30 degree, and this requirement aspect preparation is very high.
The pixelated 2 D photon crystal has with respect to traditional photonic crystal that to change yardstick big, is more prone to find the advantage of the new construction with big forbidden band.When N gets enough when big, we can simulate the photonic crystal of arbitrary structures and calculate the forbidden band in principle, but the difficulty of preparation also is index and rises simultaneously.The research work of a lot of this respects is arranged at present, as Applied Physics Letters, 2005, but the work of this article is different with the desired value setting of the present invention's research, and they seek the photon crystal structure that has big forbidden band at the TE polarized wave.The European Physical Journal B has also introduced the work of pixelated 2 D photon crystal in 2004, but their project organization must be at anisotropic material, and the choice of this material is little, is very limited.Physical Review B, 2003 have also reported the work of this respect, and have obtained 20.1% good result, but because of its primitive unit cell cut apart too thin, 1000 * 1000=1,000,000, preparation difficulty is difficult to obtain actual application.Acta Physica Sinica 2002 had reported once that the anisotropic material hoof of high index of refraction and 10 * 10 pixelated 2 D photon crystals that air constitutes had 11.782% absolute forbidden band at low frequency region, and the same year, PhysicalReview B reported that 10 * 10 pixelated 2 D photon crystals of gallium arsenide GaAs material and air preparation at the bandwidth absolute value that low frequency region has absolute forbidden band are
Centre frequency is
So the bandwidth relative value is 13.09%, the primitive cell structure symmetry of above-mentioned two kinds of structures: relative x, y axle reflective symmetry around z axle 90 degree symmetries, also promptly only need be determined 1/8 primitive cell structure.And primitive cell structure of the present invention satisfies is the inverting symmetry, needs to determine 1/2 primitive unit cell, and comparatively speaking the search volume increases greatly.
Summary of the invention
The objective of the invention is when reducing the preparation difficulty, to increase the absolute bandwidth of photonic crystal.
In order to achieve the above object, the invention provides a kind of square crystal lattice 2 D photon crystal, a kind of square crystal lattice 2 D photon crystal, it is characterized in that, the primitive unit cell of described 2 D photon crystal is split into 10 * 10 square pixels structures that comprise high index of refraction dielectric material and low-refraction dielectric material, it satisfies the inverting symmetry, and wherein high index of refraction dielectric material and low-refraction dielectric material are arranged according to certain rules, are specially:
Wherein 1 represent the high index of refraction dielectric material, 0 represents the low-refraction dielectric material.
Further, the high index of refraction dielectric material is preferably silicon among the present invention, and its specific inductive capacity is 11.56, the low-refraction dielectric material is preferably air, its specific inductive capacity is 1, and when grating constant a got 1 μ m, the relative value in the maximum absolute forbidden band of low frequency region was 13.25%.
Effect of the present invention is the square crystal lattice 2 D photon crystal that high index of refraction dielectric material and two kinds of materials of low-refraction dielectric material (particularly silicon and air) constitute, and has big absolute forbidden band relative value at low frequency region; Owing to selected the pixelated 2 D photon crystal of coarsegrain for use, as shown in Figure 2, the minimum dimension of 100nm is an acceptable at present little level of processing simultaneously, and the forbidden photon band that the present invention had under identical preparation difficulty is bigger in a word.Have big forbidden band and also just mean can controlled light frequency scope also just widely more, can form the defective mould in wideer frequency range, obtain the semiconductor laser of high Q value by point defect, line defect obtains lossless wide-angle curved waveguide; The super prism of preparation, negative refractive rate lens etc. in the wideer frequency range.
Description of drawings
Fig. 1 is the primitive unit cell of 2 D photon crystal.
Fig. 2 is the structural representation of 2 D photon crystal 4 * 4 primitive unit cells.
Fig. 3 is the energy band diagram of two-dimensional photon crystal structure.
Embodiment
Below in conjunction with accompanying drawing preferred implementation of the present invention is provided detailed description.
As shown in Figure 1, the primitive unit cell of 2 D photon crystal, 2 D photon crystal primitive unit cell of the present invention is made up of 10 * 10 square pixels.Black part 11 is represented high-index material, and white portion 12 is represented low-index material.The high index of refraction part is made of silicon, and specific inductive capacity is 11.56; The low-refraction part is made of air, and specific inductive capacity is 1.Grating constant a is taken as 1 μ m, and pixel is that the length of side of square pillar then is 100nm, and the size of square pillar is 100nm * 100nm.
As shown in Figure 2, the structural representation of 2 D photon crystal 4 * 4 primitive unit cells, be not difficult to find by observation, the square dielectric distribution of the actual distortion that obtains for the conversion that distributes by the high refractive index medium post of two-dimensional photon crystal structure of the present invention, as everyone knows, have maximum absolute forbidden band with square scatterer in the tetragonal, and by reducing the structural symmetry of square scatterer, we have obtained the two-dimension square lattice photonic crystal in big absolute forbidden band.
As shown in Figure 3, the energy band diagram of two-dimensional photon crystal structure, the corresponding TE ripple of solid line, the corresponding TM ripple of dotted line.The centre frequency in the maximum forbidden band of this structure is
Energy gap is
The relative value in maximum forbidden band is 13.25%.Forbidden photon band corresponding wavelength scope of the present invention: 1.411 μ m--1.612 μ m.Under the equal preparation difficulty, this is the structure of the relative broad of present photonic crystal controllable frequency scope.
Claims (2)
1, a kind of square crystal lattice 2 D photon crystal, it is characterized in that, the primitive unit cell of described 2 D photon crystal is split into 10 * 10 square pixels structures that comprise high index of refraction dielectric material and low-refraction dielectric material, it satisfies the inverting symmetry, wherein high index of refraction dielectric material and low-refraction dielectric material are arranged according to certain rules, are specially:
Wherein 1 represent the high index of refraction dielectric material, 0 represents the low-refraction dielectric material.
2. square crystal lattice 2 D photon crystal as claimed in claim 1 is characterized in that, described high index of refraction dielectric material is a silicon, and its specific inductive capacity is 11.56; The low-refraction dielectric material is an air, and its specific inductive capacity is 1; When the grating constant a of described structure got 1 μ m, the relative value in the maximum absolute forbidden band of low frequency region was 13.25%.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100869751A CN100419463C (en) | 2005-11-24 | 2005-11-24 | Square crystal lattice 2D photon crystal |
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| CNB2005100869751A CN100419463C (en) | 2005-11-24 | 2005-11-24 | Square crystal lattice 2D photon crystal |
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| CN1971312A true CN1971312A (en) | 2007-05-30 |
| CN100419463C CN100419463C (en) | 2008-09-17 |
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| CNB2005100869751A Expired - Fee Related CN100419463C (en) | 2005-11-24 | 2005-11-24 | Square crystal lattice 2D photon crystal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104101949A (en) * | 2014-07-28 | 2014-10-15 | 欧阳征标 | Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal |
| WO2016015632A1 (en) * | 2014-07-28 | 2016-02-04 | 深圳大学 | Square crystal lattice photonic crystal based on high refractive index hollow column with round inner surface and square outer surface |
-
2005
- 2005-11-24 CN CNB2005100869751A patent/CN100419463C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104101949A (en) * | 2014-07-28 | 2014-10-15 | 欧阳征标 | Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal |
| WO2016015632A1 (en) * | 2014-07-28 | 2016-02-04 | 深圳大学 | Square crystal lattice photonic crystal based on high refractive index hollow column with round inner surface and square outer surface |
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| Publication number | Publication date |
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| CN100419463C (en) | 2008-09-17 |
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Address after: Northwest Hebi Qibin zone of Henan province 458030 Li Yang Road and Hengshan Road intersection angle (private science and Technology Industrial Park Lane middle) Patentee after: HENAN SHIJIA PHOTONS TECHNOLOGY CO., LTD. Address before: Northwest Hebi Qibin zone of Henan province 458030 Li Yang Road and Hengshan Road intersection angle (private science and Technology Industrial Park Lane middle) Patentee before: Henan Shijia Photons Technology Co., Ltd. |
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