CN1970715A - Cleaning liquid of medicinal liquor supply device for semiconductor manufacture - Google Patents
Cleaning liquid of medicinal liquor supply device for semiconductor manufacture Download PDFInfo
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- CN1970715A CN1970715A CNA2006101467223A CN200610146722A CN1970715A CN 1970715 A CN1970715 A CN 1970715A CN A2006101467223 A CNA2006101467223 A CN A2006101467223A CN 200610146722 A CN200610146722 A CN 200610146722A CN 1970715 A CN1970715 A CN 1970715A
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- China
- Prior art keywords
- photo
- scavenging solution
- protective membrane
- fluorine
- upper strata
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention relates to a clean agent for cleaning liquor feeder apparatus in semiconductor producing process, characterizing in: the clean agent at least containing hydrofluoroether. According to this invention, a clean agent can clean liquor feeder apparatus especially for selcting from photoresistic film forming material processed by immersion exposure process, forming material of photoresist upper protecting film and at least one liquor feeder apparatus used in semiconductor producing process of fluorin organic solvent is provided. The clean agent has good cleaning performance, and could not reduce transparence of forming material of photoresist upper protecting film.
Description
Technical field
The present invention relates to be used for cleaning the scavenging solution of the chemicals feeder that uses in semi-conductor manufacturing process.Be particularly related to be used for cleaning and supply with the soup that is used for immersion exposure and handles, particularly supply with and be selected from photoresist film and form with material, photo-resist upper strata protective membrane and form with material, and the scavenging solution of the device of at least a kind of soup of fluorine class organic solvent.
Background technology
Photolithography is adopted in the manufacturing of the microstructure in the various electronicss such as semiconductor devices, liquid crystal apparatus more.In recent years, highly integrated, the microminiaturization of semiconductor devices make progress rapidly, and the photo-resist pattern in the photo-mask process forms and also begins the further miniaturization of requirement.
Now, utilize photolithography, for example, can in zone foremost, form the fine photo-resist pattern about live width 90nm, and research and develop the more fine pattern that forms live width 65nm.
In order to form above-mentioned finer pattern, consider the counte-rplan of improvement exposure apparatus or photo anti-corrosion agent material usually.As the counte-rplan of utilizing exposure apparatus, can enumerate and shorten F
2The opening number schemes such as (NA) of the wavelength of light sources such as excimer laser, EUV (far ultraviolet rays yue), electron rays, X ray, soft X-ray or increase lens.
But, shorten the novel exposure apparatus that optical source wavelength needs great number.For high NAization,, improve exploring degree, the problem that the depth of focus amplitude also reduces even therefore exist because exploring degree and depth of focus amplitude have the relation of balance (trade-off).
Recently, as the photoetching technique that can address the above problem, reported immersion exposure (Liquid Immersion Lithography) method (for example referring to non-patent literature 1～3).This method is when exposure, make the lens of exposure apparatus and be positioned in the exposure light path between the exposure object thing (photoresist film on the substrate) on the wafer station, there is the immersion liquid medium of specific thicknesses in the film top of above-mentioned at least photo-resist, with the photoresist film exposure, form the photo-resist pattern.The advantage of this immersion exposure method is for changing specific refractory power big and than the specific refractory power of the photoresist film little immersion liquid medium (for example pure water, fluorine class inert liq etc.) of specific refractory power (n) than above-mentioned space (gas) into by the exposure light path space with rare gas elementes such as existing air or nitrogen, even use the light source of identical exposure wavelength, similarly realize high definition in the time of also can or using high NA lens, the depth of focus amplitude does not take place simultaneously yet reduce with the exposure light that uses short wavelength more.
As long as adopt above-mentioned immersion exposure to handle, can use the lens that assemble in the existing exposure apparatus to form the photo-resist pattern that sharpness is higher and depth of focus is also good at low cost, thereby receive much attention.
But, because it is to exist under the state of immersion liquid medium to expose between exposure is with lens and photoresist film that immersion exposure is handled, the stripping composition therefore worrying from the photoresist film stripping to the immersion liquid medium to exposure apparatus cause damage (for example exposure with the atomizing of the brilliant material of lens, and loss of transmission, the appearance that cause thus expose unequal) etc.
As counte-rplan, the improvement photo anti-corrosion agent material is arranged, prevent the scheme of the stripping composition of photo-resist, or layer protecting film (photo-resist upper strata protective membrane) is set on the photo-resist layer, prevent scheme that the stripping composition of photo-resist oozes out etc.Wherein, the method that protective membrane is set has the advantage that can directly use existing photo-resist.As the example that forms this protective membrane, the protective membrane that has for example proposed to contain the perfluoroalkyl polyethers forms the technical scheme (for example referring to patent documentation 1) that is formed on the photo-resist upper strata with material.
But; because the intermiscibility of protective membrane and photoresist film is low; when therefore the device of above-mentioned soup was supplied with in cleaning, when using photoresist film formation with material (=organic materials) as supply of chemical and use upper strata protective membrane was difficult to use same scavenging solution to be handled when forming with material (fluorine class material).Begin one's study and be used for photoresist film respectively and form with cleaning of materials liquid and be used for upper strata protective membrane formation cleaning of materials liquid.But; even when using above-mentioned 2 kinds of scavenging solutions; the cleaning performance deficiency also can appear, because of feedway pollutes that risk, the consequent coating cause foreign matter to produce are bad, the transparency reduction of photo-resist upper strata protective membrane after the coating etc., the risk that variety of issue takes place increases.
[non-patent literature 1] " vacuum science and technical journal, B are collected (Journal of VacuumScience ﹠amp; Technology B) ", (U.S.), 1999, the 17th the volume, No. 6,3306-3309 page or leaf
[non-patent literature 2] " vacuum science and technical journal, B are collected (Journal of VacuumScience ﹠amp; Technology B) ", (U.S.), calendar year 2001, the 19th volume, No. 6,2353-2356 page or leaf
[non-patent literature 3] " SPIE's procceedings (Proceeding ofSPIE) ", (U.S.), 2002, the 4691st volume, 459-465 page or leaf
[patent documentation 1] spy opens the 2005-250511 communique
Summary of the invention
The present invention In view of the foregoing finishes, and particularly can be used in clean to supply with to be selected to be used for photoresist film that immersion exposure handles and to form with material, photo-resist upper strata protective membrane and form with material, and at least a kind the medicinal liquor supply device for semiconductor manufacture of fluorine class organic solvent and the scavenging solution of the transparency reduction that cleaning performance is good and photo-resist upper strata protective membrane is formed uses material.
The inventor etc. further investigate the scavenging solution of medicinal liquor supply device for semiconductor manufacture in order to address the above problem; found that the scavenging solution that contains hydrogen fluorine ether at least is widely used in cleaning being selected from is used for photoresist film that immersion exposure handles and forms and form the photo-resist upper strata protective membrane that with material, particularly contains the perfluoroalkyl polyethers with material, photo-resist upper strata protective membrane and form at least a kind the feedway of using material, reaching fluorine class organic solvent; cleaning performance is good, thereby has finished the present invention.
That is, the invention provides a kind of scavenging solution, this scavenging solution is used for cleaning the chemicals feeder that semi-conductor manufacturing process uses, and it is characterized by this scavenging solution and contains hydrogen fluorine ether at least.
The invention provides a kind of can clean particularly to supply with to be selected from a kind of scavenging solution be used for photoresist film that immersion exposure handles and form with material, photo-resist upper strata protective membrane and form with material, and at least a kind medicinal liquor supply device for semiconductor manufacture of fluorine class organic solvent and cleaning performance is good and do not reduce the scavenging solution that the transparency of material is used in the protective membrane formation of photo-resist upper strata.
Embodiment
Describe the present invention below in detail.
Being characterized as of scavenging solution of the present invention contains hydrogen fluorine ether (HFE) at least.Herein, hydrogen fluorine ether is meant the hydrogen fluorohydrocarbon with ehter bond.Among the present invention, consider from the aspects such as easiness that cleaning, industry are made, as hydrogen fluorine ether, the preferred hydrogen fluorine ether of carbonatoms in 4～12 scopes, its structure can be in straight chain shape, a chain, the ring-type any.
In the above-mentioned hydrogen fluorine ether, preferred especially C
4F
9OCH
3And C
4F
9OC
2H
5The constitutional isomer that also can contain above-claimed cpd, i.e. C
2F
5CF (CF
3) OCH
3, (CF
3)
2CFCF
2OCH
3, (CF
3)
3COCH
3, C
2F
5CF (CF
3) OC
2H
5, (CF
3)
2CFCF
2OC
2H
5, (CF
3)
3COC
2H
5Deng.
The use level of hydrogen fluorine ether in scavenging solution of the present invention is preferably more than the 70 quality %.
In the scavenging solution of the present invention, except cooperating above-mentioned hydrogen fluorine ether, can also cooperate any water-miscible organic solvent that has intermiscibility with this hydrogen fluorine ether.As above-mentioned water-miscible organic solvent, preferred carbonatoms is 1～5 alcoholic solvent, particularly, and preferred alcohol, Virahol etc.
The use level of above-mentioned water-miscible organic solvent is not particularly limited, and with respect to whole scavenging solutions, is that the upper limit cooperates with 30 quality % preferably.
Can also further cooperate the arbitrary surfaces promoting agent etc. that has intermiscibility with above-mentioned hydrogen fluorine ether in the scavenging solution of the present invention.As above-mentioned tensio-active agent, so long as the tensio-active agent of cleaning performance deterioration is got final product, can be the ionic species tensio-active agent, also can be not particularly limited for nonionic class tensio-active agent.
The scavenging solution that is used for cleaning chemicals feeder of the present invention is specially adapted to clean to be selected from and is used for photo-resist that immersion exposure handles and forms to form with material, at least a kind of soup reaching fluorine class organic solvent with material, photo-resist upper strata protective membrane and supply to substrate or be formed on device on the coating on the substrate.
Above-mentioned photo-resist forms with diversified various photo anti-corrosion agent materials such as the suitable i of use of material wire gauge lattice, KrF specification, ArF specifications.Wherein can be used to comprise minus and positive light anti-etching agent, the photo-resist that can be developed by alkali aqueous solution effectively.As above-mentioned photo-resist, can enumerate the positive light anti-etching agent that (i) contains the alkali-soluble novolac resin and contain the compound of naphthoquinones diazido, (ii) contain through the acidic compound that exposes, decomposed the back to the compound of the solvability increase of alkali aqueous solution and the positive light anti-etching agent of alkali soluble resin by acid, (iii) contain through the acidic compound that exposes, have by acid and decompose the positive light anti-etching agent of back the alkali soluble resin of the group of the solvability increase of alkali aqueous solution, reach and (iv) contain the compound that under the effect of light, produces acid or free radical, the negative type photoresist of linking agent and alkali soluble resin etc., but be not limited to above-mentioned substance.Need to prove that photo anti-corrosion agent material is dissolved in above-mentioned photo-resist in the organic solvent usually and uses.As organic solvent, preferably use polyalcohols and derivative thereof, lactone, reach organic acid lower alkyl esters etc.But be not limited to above-mentioned substance.
As polyalcohols and derivative thereof, can enumerate the monomethyl ether of ethylene glycol, propylene glycol, glycol ether, ethylene glycol acetate, propylene glycol monoacetate, diglycol monotertiary acetic ester or above-claimed cpd, single ethyl ether, single propyl ether, single-butyl ether or single phenyl ether etc.
As lactone, can enumerate gamma-butyrolactone.
As the organic acid lower alkyl esters, can enumerate ester classes such as ethyl lactate, Pyruvic Acid Methyl ester, Pyruvic Acid Ethyl ester, methoxypropionic acid methyl esters, ethoxyl ethyl propionate.
Except that above-mentioned solvent, can also use ketones such as acetone, methyl ethyl ketone, pimelinketone, methyl isoamyl ketone, 2-heptanone or dioxane and so on cyclic ethers class etc.
Formation is used material, the fluoro-alkyl polyethers that preferably uses hydrogen atom partly or entirely to be replaced by fluorine atom as above-mentioned photo-resist upper strata protective membrane.Replace the fluoro-alkyl polyethers as this fluorine, ring type, chain type can be used.
Wherein, preferably has the perfluoroalkyl polyethers that ring type structure, hydrogen atom are all replaced by fluorine atom.The commercially available product of ring type perfluoroalkyl polyethers has " Cytop " series (Asahi Glass (strain) system), " Teflon (Teflon)-AF1600 ", " Teflon-AF2400 " (above is E.I.Du Pont Company's system) etc., can preferably use the said products.Ring type perfluoroalkyl polyethers is preferred to be used separately, also can together use with other fluorine-type resins, for example chain type perfluoroalkyl polyethers etc.
As above-mentioned chain type perfluoroalkyl polyethers, can use polychlorotrifluoroethylene, tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl ethylene oxy multipolymer, tetrafluoraoethylene-hexafluoropropylene copolymer etc.The commercially available product of chain type fluoro-alkyl polyethers has " Demnum S-20 ", " DemnumS-65 ", " Demnum S-100 ", " Demnum S-200 " (above is Daikin Industries (strain) system) etc., can preferably use above-mentioned substance.
This photo-resist upper strata protective membrane formation preferably is dissolved in above-mentioned fluorine substituted polymer in the fluorine class organic solvent with material to be used.Concentration is preferably about 0.1～30 quality %.
As above-mentioned fluorine class organic solvent, get final product so long as can dissolve the solvent of fluorine substituted polymer, be not particularly limited, for example can enumerate perfluoro-cyclicether, perfluor tributylamine, perfluor four pentyl amine, perfluor four hexyl amines etc. such as the perfluoroolefine of the residual pair of key of a part in perfluoroalkane hydrocarbon such as perflexane, PF 5070 or perfluorinated cycloalkanes, the above-claimed cpd and perfluor-tetrahydrofuran, perfluor (2-butyl) tetrahydrofuran (THF).But be not limited to above-mentioned example.Need to prove that this fluorine class organic solvent is also as removing the remove liquid of photo-resist upper strata protective membrane formation with material.
Scavenging solution of the present invention can be supplied with above-mentioned photo-resist with a kind of liquid cleaning and form with material and so on organic composition, do not have inside, pipe arrangement and the sewer pipe etc. of the fluorine-containing photo-resist upper strata protective membrane formation of intermiscibility with the medicinal liquor supply device for semiconductor manufacture of fluorine constituents such as material or supply fluorine class organic solvent with this organic composition, and cleaning performance is good.
Below row are given one example and are specified the operational version of using scavenging solution of the present invention.
At first, on substrate, adopt known method painting photoresist such as spin-coating method to form via chemicals feeder and use material, make its drying, the formation photoresist film.
Then, the formation of photo-resist upper layer film is coated on the above-mentioned photoresist film by chemicals feeder with material, makes its dry photo-resist upper layer film that forms.
Need to prove, form with not having intermiscibility between the material (fluorine class material) because photoresist film forms with material and photo-resist upper layer film, therefore can shared 1 chemicals feeder.Also can use different chemicals feeders.
Then, make scavenging solution of the present invention peripheral machine such as contact in pipe arrangement, nozzle, the cup of above-mentioned chemicals feeder, clean and remove attachment removal and be cemented in residue in the device.As concrete example, the piping cleaning method of chemicals feeder for example has emptying soup in the pipe arrangement of chemicals feeder, scavenging solution of the present invention is flowed into wherein be full of in the pipe arrangement, keeps this state to place the specified time.After specified time; when scavenging solution is discharged from pipe arrangement or after discharge; make in the soup inflow pipe arrangement, behind the logical on a small quantity liquid, begin to form with material or to supplying with protective membrane formation material in upper strata on the photoresist film supplying with photoresist film on the substrate.Scavenging solution of the present invention can be applicable to simultaneously that photoresist film forms with material (organic materials), protective membrane formation material (fluorine class material); intermiscibility is good; and anergy; therefore, have do not generate heat, do not produce gas, do not see in pipe arrangement that liquid proterties such as gonorrhoea takes place to separate are unusual yet, good effect such as no foreign matter increase in the liquid.Even particularly under the situation of the residue that in pipe arrangement, adheres to soup because of life-time service, also can dissolve above-mentioned residue, thoroughly remove the factor that causes particulate to produce with scavenging solution of the present invention.When beginning soup supply operation once more, when discharging scavenging solution or after discharge, particularly only need carry out a spot of empty stream, can begin soup supply operation.And, do not influence protective membrane and form the transparency of using material.
Next, the substrate that has formed above-mentioned photo-resist layer-protective membrane is exposed, develops by the immersion exposure method, form the photo-resist pattern.
Particularly, between said protection film and exposure apparatus (lens), immersion exposure liquid is set.Under this state, photoresist film is carried out the selectivity exposure via mask pattern.
Therefore, exposure light arrives photoresist film by immersion exposure with liquid and protective membrane.
At this moment; photoresist film is isolated with liquid by protective membrane and immersion exposure, prevents to be subjected to immersion exposure that the swelling iso-metamorphism takes place with the invasion and attack of liquid or the composition stripping is gone bad with the optical characteristics such as specific refractory power that cause immersion exposure with liquid itself in the liquid to immersion exposure.Scavenging solution of the present invention has the effect of the transparency reduction that does not cause protective membrane; therefore it is good be coated with the upper strata protective membrane transparency that forms via the chemicals feeder that uses scavenging solution of the present invention to clean on photoresist film, thereby to utilizing exposure light formation pattern to have no adverse effects.
Exposure light is not particularly limited, and can use ArF excimer laser, KrF excimer laser, F
2Excimer laser, EB, EUV, VUV (vacuum ultraviolet ray) isoradial expose.The selection of above-mentioned exposure light depends primarily on the characteristic of photoresist film.
Above-mentioned immersion exposure, is not particularly limited so long as specific refractory power gets final product greater than the specific refractory power of air and less than the liquid of the specific refractory power of the photoresist film that uses with liquid.As above-mentioned immersion exposure liquid, can enumerate water (pure water, deionized water), fluorine class inert liq etc., also can use the immersion exposure liquid with high refractive index characteristic that may develop in the near future.As the concrete example of fluorine class inert liq, can enumerate with C
3HCl
2F
5, C
4F
9OCH
3, C
4F
9OC
2H
5, C
5H
3F
7Deng fluoride compound is the liquid of principal constituent.As immersion exposure liquid, consider from cost, security, environmental problem and wide usage aspect, preferably make water (pure water, deionized water), use wavelength to be the exposure light of 157nm (F for example
2Excimer laser etc.) under the situation, consider, preferably use the fluorine kind solvent from the few aspect of absorption of exposure light.
After the exposure process that carries out under the above-mentioned immersion liquid state finishes, remove immersion exposure liquid, remove liquid from substrate.
Then, remain on the state that is laminated with protective membrane on the photoresist film after the exposure, photoresist film is carried out PEB (exposure post-heating) handle, next, the substrate contacts that fluorine class organic solvent etc. is removed after liquid and the exposure is removed protective membrane.The method of contact can be in the pool (puddle) method, pickling process, the spraying process etc. any.
After removing protective membrane, use the alkaline-based developer that constitutes by alkaline aqueous solution to carry out development treatment.Alkaline-based developer can use habitual developing solution arbitrarily.Need to prove, also can after then carrying out after the development treatment, cure (post bake).Next, use pure water etc. to wash.This water for example washes limit rotary plate limit and drips or spray water at substrate surface, flushing remove on the substrate developing solution and by the photo-corrosion-resisting agent composition of this developing solution dissolution.Carry out drying then, photoresist film forms the pattern corresponding to the shape of mask pattern, obtains the photo-resist pattern.
Form the photo-resist pattern as described above, can make the photo-resist pattern of fine live width, particularly closely spaced line and interval (line andspace) pattern with excellent resolution.
As mentioned above; on medicinal liquor supply device for semiconductor manufacture, be attached with as the cleaning object of scavenging solution of the present invention be selected from photoresist film form with material, photo-resist upper strata protective membrane form with material, and fluorine class organic solvent in the state of at least a kind of residue under; photo-resist is formed with material and so on organic composition and do not have the residue that the fluorine-containing photo-resist upper strata protective membrane formation of intermiscibility is mixed in fluorine constituents such as material or fluorine class organic solvents with this organic composition and clean, can remove the residue that is mixed in effectively.
Embodiment
Illustrate in greater detail the present invention below by embodiment, but the present invention is not limited to following example.
(embodiment 1)
Input 30mL positive light anti-etching agent material in the container of 100mL (" TArF-P6111 " (chemical industry (strain) system is answered in Tokyo)), 30mL photo-resist upper strata protective membrane form with material (it is the solution of 1 quality % that " Cytop CTX-809SP2 " (Asahi Glass (strain) system) is dissolved in the concentration that forms in the perfluor tributylamine), reach the C of 30mL as the clean-out system composition
4F
9OCH
3, mix, placed 30 minutes.The mixed solution of this moment in the container that detect by an unaided eye, the result is water white transparency for mixed solution, does not observe layer and separates, fully dissolving.
(comparative example 1)
In the foregoing description 1, mismatch C
4F
9OCH
3, in addition, mix 2 kinds with embodiment 1 identically and form material, place after 30 minutes, the mixed solution in the container that detects by an unaided eye, the result is separated into 2 layers for mixed solution.
(embodiment 2)
Equivalent mixing positive light anti-etching agent material (" TArF-P6111 " (chemical industry (strain) system is answered in Tokyo)), photo-resist upper strata protective membrane form with material (it is the solution of 1 quality % that " Cytop CTX-809SP2 " (Asahi Glass (strain) system) is dissolved in the concentration that forms in the perfluor tributylamine), obtain mixing solutions.
Use propylene glycol monomethyl ether to clean the inflammatory blepharoedema that is coated with that is attached with this mixing solutions, use by C then
4F
9OCH
3The scavenging solution of forming cleans, and re-uses perfluor (2-butyl) tetrahydrofuran solution and carries out clean.In the cleaned cup of visual inspection, the result is removed fully for solution.
(embodiment 3)
In embodiment 2,, use C as scavenging solution
4F
9OC
2H
5Replaced C
4F
9OCH
3, in addition, adopt with embodiment 2 identical methods and carry out clean.In the cleaned cup of visual inspection, the result is removed fully for solid matter.
(comparative example 2)
In embodiment 2, do not utilize C
4F
9OCH
3Clean, in addition, adopt with embodiment 2 identical methods and carry out clean being coated with inflammatory blepharoedema.In the cleaned cup of visual inspection, the result is the residual residue that has.
Industrial utilizability
Cleaning fluid of the present invention can be used for cleaning to be supplied with the liquid that is used for immersion exposure and processes, particularly supplies with and be selected from photoresist film and form with material, photoresist upper strata diaphragm and form with material, and the device of at least a kind of liquid of fluorine class organic solvent, and has good cleaning performance.
Claims (5)
1, a kind of scavenging solution is the scavenging solution that is used for cleaning the chemicals feeder that semi-conductor manufacturing process uses, and it is characterized by, and described scavenging solution contains hydrogen fluorine ether at least.
2, scavenging solution as claimed in claim 1; it is characterized by, described chemicals feeder be be selected from the photoresist film that uses in the photo-mask process form with material, photo-resist upper strata protective membrane form with material, reach at least a kind of soup in the fluorine class organic solvent supply on the substrate or the coating that forms on the substrate on device.
3, scavenging solution as claimed in claim 2 is characterized by, and described photo-mask process adopts immersion exposure to handle.
4, scavenging solution as claimed in claim 2 is characterized by, and described photo-resist upper strata protective membrane forms and contains the fluoro-alkyl polyethers that hydrogen atom is partly or entirely replaced by fluorine atom at least with material.
5, scavenging solution as claimed in claim 1 is characterized by, and described hydrogen fluorine ether is to be selected from C
4F
9OCH
3, C
4F
9OC
2H
5And in the isomer at least a kind.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP332193/2005 | 2005-11-16 | ||
| JP2005332193 | 2005-11-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1970715A true CN1970715A (en) | 2007-05-30 |
Family
ID=38111741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101467223A Pending CN1970715A (en) | 2005-11-16 | 2006-11-16 | Cleaning liquid of medicinal liquor supply device for semiconductor manufacture |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20070052205A (en) |
| CN (1) | CN1970715A (en) |
| TW (1) | TW200732294A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442024A (en) * | 2007-11-22 | 2009-05-27 | 株式会社瑞萨科技 | Method of manufacturing semiconductor device |
| CN104412370A (en) * | 2012-07-19 | 2015-03-11 | 日产化学工业株式会社 | Cleaning fluid for semiconductor, and cleaning method using same |
| CN109415798A (en) * | 2017-06-26 | 2019-03-01 | Ａｇｃ株式会社 | The cleaning method and flushing composition of the mask of vacuum evaporation |
-
2006
- 2006-11-15 KR KR1020060112539A patent/KR20070052205A/en not_active Application Discontinuation
- 2006-11-16 TW TW095142437A patent/TW200732294A/en unknown
- 2006-11-16 CN CNA2006101467223A patent/CN1970715A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442024A (en) * | 2007-11-22 | 2009-05-27 | 株式会社瑞萨科技 | Method of manufacturing semiconductor device |
| CN104412370A (en) * | 2012-07-19 | 2015-03-11 | 日产化学工业株式会社 | Cleaning fluid for semiconductor, and cleaning method using same |
| CN104412370B (en) * | 2012-07-19 | 2018-05-11 | 日产化学工业株式会社 | Semiconductor cleaning solution and the washing methods using the cleaning solution |
| CN109415798A (en) * | 2017-06-26 | 2019-03-01 | Ａｇｃ株式会社 | The cleaning method and flushing composition of the mask of vacuum evaporation |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070052205A (en) | 2007-05-21 |
| TW200732294A (en) | 2007-09-01 |
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