CN1970645A - Grinding powder material for precision multiline cutting and abrasion - Google Patents

Grinding powder material for precision multiline cutting and abrasion Download PDF

Info

Publication number
CN1970645A
CN1970645A CN 200510086961 CN200510086961A CN1970645A CN 1970645 A CN1970645 A CN 1970645A CN 200510086961 CN200510086961 CN 200510086961 CN 200510086961 A CN200510086961 A CN 200510086961A CN 1970645 A CN1970645 A CN 1970645A
Authority
CN
China
Prior art keywords
powder
cutting
column
microns
abrasive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 200510086961
Other languages
Chinese (zh)
Inventor
朱蓉辉
惠峰
卜俊鹏
郑红军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Semiconductors of CAS
Original Assignee
Institute of Semiconductors of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Semiconductors of CAS filed Critical Institute of Semiconductors of CAS
Priority to CN 200510086961 priority Critical patent/CN1970645A/en
Publication of CN1970645A publication Critical patent/CN1970645A/en
Pending legal-status Critical Current

Links

Abstract

The invention discloses a powder cutting and grinding material of precise many-line cutting and grinding manufacturing course, which is composed of two different geometrical shaped powders with one as normal particle powder and the other as column-shaped powder, wherein the grain size is between 3 and 30 um; the rate of length and diameter of column-shaped powder is between 1.5:1 and 10:1; the content of particle-shaped powder is between 5% and 95% and the content of column-shaped powder is between 95% and 5%.

Description

Accurate multi-thread cutting and grinding are with cutting abrasive dust body material
Technical field
The present invention relates to powder and cut the abrasive material technical field, the employed powder that plays the cutting and grinding effect is cut abrasive material in accurate multi-thread cutting of particularly a kind of material and the attrition process.
Technical background
The present invention relates to a kind of accurate multi-thread cutting that is applicable to electronic material and make an addition to the powder abrasive material that plays the cutting and grinding effect that uses in the cutting liquid when grinding.General cutting liquid or the high rigidity powders (hereinafter to be referred as powder) such as lapping liquid mixed aluminium oxides or silicon carbide of using cut and grind (below be collectively referred to as cut grinding process) in carrying out multi-thread cutting and process of lapping, usually the powder body material that uses in cutting grinding process is single nominal particle size and single grit shape, in use often can not obtain the best effects of several crucial quality point such as material removal rate, surface quality situation and chip sub-surface damage layer simultaneously.If thisly cut the complete processing that adopts single powder in the mill processing in precision the high mill speed of cutting generally arranged, then surface performance is coarse, and the sub-surface damage layer depth is unfavorable for the finishing requirements of material, especially in the semiconductor wafer industry, each road technology is all very high to surperficial specification of quality; If employing reduces the grit granularity and goes to obtain surface quality preferably simultaneously, to cut mill speed and generally all can't reach the ideal level, efficient is very low, and sub-surface damage layer is owing to the increase of tonnage also not necessarily can reduce simultaneously.
Summary of the invention
The abrasive dust body material of cutting of cutting the use single type that replacement was continued to use in the past always in the grinding process that the present invention has adopted a kind of powder body material of mixing formula to be applied to wafer is cut mill processing, between a plurality of crucial quality that requires, obtain the improvement of balance and quality preferably, can under the prerequisite that does not reduce or seldom reduce materials processing speed, obtain suitable suface processing quality and thin sub-surface damage layer.It is not too responsive to adopt this powder body material to process for the processing environment that changes, processing mode simultaneously, can process various types of materials with stable quality comparatively, that is to say that the powder body material of this work material has better flexibility of operation.The ordinary granular powder cutting force that adopts in this invention is strong, has process velocity preferably, but because corner angle sharply make wafer surface produce a lot of microcracks under the ordering about of pressure, surface irregularity, and cause the deep sub-surface damage layer of the following appearance of wafer surface.A little less than the powder cutting power of column, it is very slow to remove the material ability, but can be good at evenly discharging dispense pressure, and processed wafer surface comparatively fine and smooth good uniformity, especially affected layer are low shallow.Select two kinds of suitable material diameter for use, and adopt suitable proportioning mix can two kinds of materials of good comprehensive characteristics of personality, carry out disposable processing and reach comprehensive high-quality machined surface.
A kind of be applicable to the multi-thread cutting of material and make an addition to the powder that plays the cutting and grinding effect that uses in the cutting liquid when grinding cut abrasive material, this powder is made up of two kinds of different powders of geometrical shape type.
Described powder is cut abrasive material, and the shape of two kinds of contained different powder body materials is a kind of to be conventional granular powder, and another kind is the column powder.
Described powder is cut abrasive material, and the size of contained granular powder is between 3 microns to 30 microns, and the particle size range of column powder is between 3 microns to 30 microns.
Described powder is cut abrasive material, and contained its length of column powder and the ratio of diameter are between 1.5: 1 to 10: 1.
Described powder is cut abrasive material, and the content of contained granular powder is between 5% to 95%, and the content of column powder is between 95% to 5%.
Embodiment
Adopt the alumina powder jointed mixed according to 2: 1 of the column of 10 microns of about 12 microns granular powder of silicon carbide of specific diameter and diameters, carry out the two-sided precise finiss of gaas compound semiconductor wafer material, under the situation that does not change other processing conditions, granular carborundum powder with respect to 12 microns of independent use specific diameters grinds approaching material removal speed and better surface quality, has obtained more shallow sub-surface damage layer simultaneously.

Claims (5)

1, a kind of be applicable to the multi-thread cutting of material and make an addition to the powder that plays the cutting and grinding effect that uses in the cutting liquid when grinding cut abrasive material, it is characterized in that this powder is made up of two kinds of different powders of geometrical shape type.
2, powder according to claim 1 is cut abrasive material, it is characterized in that, the shape of two kinds of contained different powder body materials is a kind of to be conventional granular powder, and another kind is the column powder.
3, powder according to claim 1 is cut abrasive material, it is characterized in that, the size of contained granular powder is between 3 microns to 30 microns, and the particle size range of column powder is between 3 microns to 30 microns.
4, powder according to claim 1 is cut abrasive material, it is characterized in that, contained its length of column powder and the ratio of diameter are between 1.5: 1 to 10: 1.
5, powder according to claim 1 is cut abrasive material, it is characterized in that, the content of contained granular powder is between 5% to 95%, and the content of column powder is between 95% to 5%.
CN 200510086961 2005-11-23 2005-11-23 Grinding powder material for precision multiline cutting and abrasion Pending CN1970645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200510086961 CN1970645A (en) 2005-11-23 2005-11-23 Grinding powder material for precision multiline cutting and abrasion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200510086961 CN1970645A (en) 2005-11-23 2005-11-23 Grinding powder material for precision multiline cutting and abrasion

Publications (1)

Publication Number Publication Date
CN1970645A true CN1970645A (en) 2007-05-30

Family

ID=38111680

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200510086961 Pending CN1970645A (en) 2005-11-23 2005-11-23 Grinding powder material for precision multiline cutting and abrasion

Country Status (1)

Country Link
CN (1) CN1970645A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102234500A (en) * 2010-04-28 2011-11-09 云南中科鑫圆晶体材料有限公司 Sawing and grinding powder material for precise multi-wire sawing and grinding
CN102327749A (en) * 2011-08-12 2012-01-25 无锡尚品太阳能电力科技有限公司 Preparation method of mortar for cutting monocrystalline silicon wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102234500A (en) * 2010-04-28 2011-11-09 云南中科鑫圆晶体材料有限公司 Sawing and grinding powder material for precise multi-wire sawing and grinding
CN102327749A (en) * 2011-08-12 2012-01-25 无锡尚品太阳能电力科技有限公司 Preparation method of mortar for cutting monocrystalline silicon wafer

Similar Documents

Publication Publication Date Title
CN1666844A (en) Dresser for polishing cloth and method for producing the same
WO2005122225A1 (en) Silicon wafer manufacturing method
JPH0734063A (en) Grinding by using composition containing boron suboxide
JP2008272835A (en) Resinoid grinding wheel and its manufacturing method
JP2017170554A (en) Vitrified grindstone for low pressure lapping for lapping machine and polishing method using the same
JPH11207632A (en) Polisher, manufacture of the same and polishing tool
CN1970645A (en) Grinding powder material for precision multiline cutting and abrasion
JP2002355763A (en) Synthetic grinding wheel
KR102608901B1 (en) Wafer Grinding Wheel
JP3050379B2 (en) Diamond wrap surface plate
JP5603591B2 (en) Abrasive grain for processing, processing tool, processing liquid, and processing method using them
JP2889124B2 (en) Polishing surface plate of lapping polishing device
JP2005088153A (en) Surface grinding method of hard and fragile material using diamond lapping machine
TWM500653U (en) Polishing system and polishing pad set
JP2007090444A (en) Wheel for mirror finishing
CN102234500A (en) Sawing and grinding powder material for precise multi-wire sawing and grinding
JP2006218577A (en) Dresser for polishing cloth
JPH0957614A (en) Double faces grinding wheel lapping apparatus
JPH1058331A (en) Super abrasive grain wheel for lapping
JP4601317B2 (en) Polishing tool and manufacturing method thereof
EP3131998B1 (en) Abrasive grain on the basis of electrofused aluminum oxide with a surface coating comprising titanium oxide and/or carbon
JP2000190228A (en) Fixed abrasive grain work tool
JP2003225866A (en) Metal bond diamond lapping surface plate for processing thin sheet
JP5554052B2 (en) Polishing composition and polishing method
JP3232323B2 (en) Alumina whetstone

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication