CN1967338A - Display substrate, method of manufacturing the same and display device having the same - Google Patents

Display substrate, method of manufacturing the same and display device having the same Download PDF

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Publication number
CN1967338A
CN1967338A CNA2006101718823A CN200610171882A CN1967338A CN 1967338 A CN1967338 A CN 1967338A CN A2006101718823 A CNA2006101718823 A CN A2006101718823A CN 200610171882 A CN200610171882 A CN 200610171882A CN 1967338 A CN1967338 A CN 1967338A
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CN
China
Prior art keywords
layer
overlayer
color
substrate
pixel electrode
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Pending
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CNA2006101718823A
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Chinese (zh)
Inventor
金彰洙
金时烈
蔡钟哲
沈怡燮
崔志源
赵国来
周振豪
金炳住
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1967338A publication Critical patent/CN1967338A/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

A display substrate includes a thin film transistor layer, a color filter layer, a plurality of pixel electrodes, a first cover layer and an alignment layer. The thin film transistor layer includes a plurality of pixel regions. The color filter layer is formed on the thin film transistor layer. The pixel electrodes are formed on the color filter layer with at least one gap defined between adjacent pixel electrodes. The first cover layer is provided in the gap between adjacent pixel electrodes and covers a portion of the color filter layer exposed by the gap between the pixel electrodes. The alignment layer is formed on the pixel electrodes and the first cover layer. Therefore, the color filter layer is spaced apart from the alignment layer to decrease an afterimage, thereby improving an image display quality.

Description

Show substrate and preparation method thereof and display device with it
Technical field
The present invention relates to a kind of display device that shows substrate, makes the method for this demonstration substrate and have this demonstration substrate.Particularly, the present invention relates to reduce afterimage and improve the demonstration substrate of image displaying quality, the display device of making the method for this demonstration substrate and having this demonstration substrate.
Background technology
The display device that comprises display image such as electronic equipments such as notebook computer, monitor, television reception apparatuses.This display device can be panel display apparatus, such as liquid crystal display (LCD) device, organic light emitting display (OLED) device etc.
The LCD device comprise down substrate, in the face of the last substrate of this time substrate and be inserted in this time substrate and last substrate between liquid crystal layer, this time substrate comprises thin film transistor (TFT) (TFT), substrate comprises color filter on this.
Following substrate comprises dielectric base, signal wire, TFT, pixel electrode etc., to drive a plurality of pixels independently.Signal wire, TFT and pixel electrode are formed on the dielectric base.Last substrate comprises color-filter layer and public electrode.Color-filter layer comprises red color filter, green color filter and blue color filter.Public electrode is in the face of pixel electrode.
Aligning under the image displaying quality basis of LCD device between substrate and the last substrate changes.That is to say that substrate instantly is during with respect to last substrate misalignment, the image displaying quality deterioration of LCD device.
For fear of the image displaying quality deterioration of LCD device, designed LCD device with color filter on the array (COA) structure.In having the LCD device of COA structure, the color-filter layer with red, green and blue look color filter is formed on down in the substrate usually.
Color-filter layer with LCD device of COA structure contacts with oriented layer by the opening between the adjacent pixel electrodes.Ion particles in the color-filter layer may be moved in this liquid crystal layer by this oriented layer, makes the electricity and the optical characteristics deterioration of the liquid crystal in the liquid crystal layer thus.This may cause unwanted afterimage phenomenon.
Summary of the invention
A kind of demonstration substrate that has improved image displaying quality and reduced the afterimage problem is provided.
A kind of method of making above-mentioned demonstration substrate is provided.
A kind of display device with above-mentioned demonstration substrate is provided.
Demonstration substrate based on one aspect of the invention comprises tft layer, color-filter layer, a plurality of pixel electrode, is provided at first overlayer in the gap between the adjacent pixel electrodes, and oriented layer.Tft layer comprises a plurality of pixel regions.Color-filter layer is formed on the tft layer.Pixel electrode is formed on the color-filter layer.Between adjacent pixel electrodes, limit at least one gap.First overlayer covers the part of this color-filter layer that exposes by the gap between this adjacent pixel electrodes.Oriented layer is formed on this pixel electrode and this first overlayer.
Show that based on the present invention's manufacturing on the other hand the method for substrate provides as follows.The tft layer that comprises a plurality of pixel regions is formed on the dielectric base.Color-filter layer is formed on the tft layer.A plurality of pixel electrodes are formed on this color-filter layer.First overlayer that covers the part of this color-filter layer is formed between the pixel electrode.Oriented layer is formed on this pixel electrode and this first overlayer.
Comprise based on the display device of another aspect of the invention and to show substrate, substrate and be inserted in liquid crystal layer between the relative substrate of this demonstration substrate relatively with this.This demonstration substrate comprises tft layer, color-filter layer, a plurality of pixel electrode, at least one gap between adjacent pixel electrodes, overlayer and first oriented layer.Tft layer comprises a plurality of pixel regions of arranging by matrix shape.Color-filter layer is formed on the tft layer.Pixel electrode is formed on the color-filter layer.Overlayer is provided in the gap between the adjacent pixel electrodes, and covers the part of this color-filter layer that exposes by this gap between this adjacent pixel electrodes.First oriented layer is formed on this pixel electrode and this overlayer.This relative substrate combines with this demonstration substrate, and shows substrate in the face of this.Liquid crystal layer is inserted between the relative substrate with this of this demonstration substrate.
This relative substrate can comprise the public electrode that is formed in the face of on the dielectric base of this demonstration substrate, and is formed on second oriented layer on this public electrode.
Based on demonstration substrate of the present invention, the display device making the method for this demonstration substrate and have this demonstration substrate, this color-filter layer and this oriented layer are separated to reduce afterimage, improve image displaying quality thus.
Description of drawings
By being described in detail with reference to the attached drawings embodiment, it is clearer that the present invention will become, wherein:
Fig. 1 is the planimetric map of describing based on the demonstration substrate of one embodiment of the invention;
Fig. 2 is the sectional view along the line I-I ' intercepting of Fig. 1;
Fig. 3 is based on the planimetric map of the demonstration substrate of another embodiment of the present invention;
Fig. 4 to 7 is sectional views of describing to make the method for demonstration substrate as illustrated in fig. 1 and 2;
Fig. 8 is the sectional view of describing based on the demonstration substrate II-II ' along the line intercepting of another embodiment of the present invention;
Fig. 9 to 13 is sectional views of describing to make the method for the demonstration substrate that is shown among Fig. 8;
Figure 14 is the planimetric map of describing based on the demonstration substrate of another embodiment of the present invention;
Figure 15 is the sectional view along the line III-III ' intercepting of Figure 14; And
Figure 16 is the sectional view of describing based on the display device of another embodiment of the present invention.
Embodiment
Below with reference to accompanying drawing the present invention is described more fully, wherein shows embodiments of the invention.Yet the present invention can be embodied as different forms, and should not be interpreted as being confined to described embodiment.Opposite, provide these embodiment so that present disclosure is comprehensive and complete, and scope of the present invention is conveyed to those skilled in the art all sidedly.In the drawings, for the sake of clarity, size and the relative size in layer and zone have been exaggerated.
Be to be understood that, when mention an element or layer be positioned at another element or layer " on ", " connections " or " coupling " arrive another element or layer time, its may be located immediately at this another element or layer on, directly connect or be coupled to this another element or the layer, perhaps may exist insertion element or the layer.On the contrary, an element " is located immediately at " another element or layer is gone up when mentioning, when " being directly connected to " or " being directly coupled to " another element or layer are gone up, then do not have the element or the layer of insertion.Similar numeral similar elements in full.As used herein, term " and/or " comprise any of one or more listed relational language and whole combination.
Although should be appreciated that the term first, second, third, etc. can be used to describe different elements, assembly, layer and/or part herein, these elements, assembly, zone, layer and/or part are not limited to these terms.These terms only are used to make an element, assembly, zone, layer or part to distinguish mutually with other zones, layer or part.Thus, do not breaking away under the situation of the present invention instruction, below first element, assembly, zone, the layer discussed or partly may be called as second element, assembly, zone, layer or part.
The element herein describing in the drawings for convenience of description or the relation of feature and other elements or feature, the relative terms of possible usage space, such as " ... under ", " ... following ", D score, " ... on ", " on " etc.Should be appreciated that except the orientation of being described in the drawings the relative terms in these spaces tends to also comprise the different orientation of device in using or operating.For example, if this device overturns in the drawings, be described as be in so another element or feature " under " or the element of " following " may be oriented in subsequently this another element or feature " on ".Thus, exemplary term " ... following " may comprise upper and lower both direction.This device possibility is by in addition directed (revolve and turn 90 degrees or other directions), and therefore use explanation is herein described in this space relatively.
Term as used herein only is in order to describe certain embodiments, not plan to limit to the present invention.As used herein, singulative " " and " being somebody's turn to do " also plan to comprise plural form, unless the opposite clear expression of Wen Zhongyou.It should also be understood that, when using term " to comprise " in this manual, specify the existence of feature, integral body, step, operation, element and/or the assembly claimed, also do not exist or additional one or more other features, integral body, step, operation, element, assembly and/or its combination but do not get rid of.
With reference now to the cross section legend, describe embodiments of the invention, these legends are schematic illustration of the Utopian embodiment of the present invention (and intermediate structure).Similarly, for example,, can suspect from the change of the shape of these legends as the result of manufacturing technology and/or error.Thus, embodiments of the invention should be interpreted as being confined to the given shape in zone described herein, but comprise, for example, by the deviation of making the shape of being brought.For example, the injection zone that is depicted as rectangle typically has the gradient of circle or curvilinear characteristic and/or implantation concentration at its edge, rather than changes to non-injection zone scale-of-two ground from injection zone.Similarly, may cause in this buried region by the buried region that inject to form and passing injection in the zone between its this surface of injecting.Thus, these zones of being described in the drawings are actually schematically, and not plan its shape profiling be the true form in the zone of device, and also do not plan to limit scope of the present invention.
Unless otherwise defined, all terms (comprising technology and scientific terminology) used herein have the implication identical with those skilled in the art's common sense.It should also be understood that, should be interpreted as having and the corresponding to implication of implication in the context of correlation technique such as these terms that usually limit with dictionary, and can not be interpreted as Utopian or excessive formal meaning, here unless carried out clear and definite like this qualification.
Below, be described in detail with reference to the attached drawings the present invention.
Fig. 1 is the planimetric map of describing based on the demonstration substrate of one embodiment of the invention.Fig. 2 is the sectional view along the line I-I ' intercepting of Fig. 1.
With reference to Fig. 1 and 2, show that substrate 100 comprises thin film transistor (TFT) (TFT) layer 280, color-filter layer 120, pixel electrode layer 130, first overlayer 141 and first oriented layer 150.TFT layer 280 comprises dielectric base 110 and pixel layer 200.
Dielectric base 110 comprises transparent material, and can by, for example, substrate of glass forms.
Pixel layer 200 is formed on the dielectric base 110.Pixel layer 200 is included in a plurality of pixel region P1 and the P2 that arranges by matrix shape on the dielectric base 110.
Pixel layer 200 comprises many grid lines 220, gate insulation layer 230, many data lines 240, TFT 250 and passivation layers 260.Replacedly, pixel layer can also comprise a plurality of TFT.
Grid line 220 on the dielectric base 110 makes the first pixel region P1 and the 3rd adjacent pixel region (not shown) below the first pixel region P1 be separated (referring to angle shown in Figure 1).
Gate insulation layer 230 is formed on the insulation course 110, and covers grid line 220.Gate insulation layer 230 comprises insulating material, such as silicon nitride (SiN x), monox (SiO x) etc.The thickness of gate insulation layer 230 for example, can be about 4500 .
Data line 240 on the gate insulation layer 230 makes the first and second adjacent pixel region P1 separate with P2.
One of TFT 250 is formed in the first pixel region P1, and is electrically connected to grid line and data line 220 and 240.TFT 250 is applied to first pixel electrode PE1 by data line 240 with picture signal according to the sweep signal that is applied to TFT 250 by grid line 220.Another TFT (not shown) in the second pixel region P2 is applied to second pixel electrode PE2 by another data line (not shown) with picture signal according to the sweep signal that is applied to this TFT (not shown) by grid line 220.
TFT 250 comprises grid 251, active layer 252, source electrode 253 and drains 254.
Grid 251 is electrically connected to every grid line 220, and plays the gate terminal of TFT 250.
Active layer 252 be formed on grid 251 corresponding gate insulation layers 230 on.Active layer 252 comprises semiconductor layer 252a and ohmic contact layer 252b.Semiconductor layer 252a can comprise amorphous silicon (a-Si).Ohmic contact layer 252b can be made by the n+ amorphous silicon that mixes n+ impurity with high concentration.
Source electrode 253 is electrically connected to every data line 240, and extends to the top of active layer 252.Source electrode 253 plays the source terminal of TFT 250.
Drain electrode 254 is formed on the active layer 252, and is separated with source electrode 253.Drain electrode 254 plays the drain terminal of TFT250.Drain electrode 254 is electrically connected to the first pixel electrode PE1 by contact hole 122, and this contact hole 122 passes passivation layer 260 and color-filter layer 120 forms.
Source electrode 253 and drain electrode 254 are formed on the active layer 252, and source electrode 253 and the zone between 254 of draining define the raceway groove of TFT in semiconductor layer 252a.
Passivation layer 260 is formed on the gate insulation layer 230 and cover data line 240 and TFT 250.Passivation layer 260 comprises insulating material, such as silicon nitride (SiN x), monox (SiO x) etc.The thickness of passivation layer 260 can be about 2000 .
Pixel layer 200 can also comprise storage line 270 and storage electrode 272.Storage line 270 is formed between the grid line 220, and is arranged essentially parallel to grid line 220 extensions.Storage electrode 272 is electrically connected to storage line 270.Storage electrode 272 is formed in each first pixel region P1.Storage line 270 and storage electrode 272 can be formed by the layer identical with grid line 220.Storage electrode 272 is with respect to gate insulation layer 230 and drain electrode 254 relative formation, to form holding capacitor Cst.Holding capacitor Cst keeps being applied to by TFT 250 picture signal of the first pixel electrode PE1 an image duration.
Color-filter layer 120 is formed on the pixel layer 200.Color-filter layer 120 comprises red (R) look color filter, green (G) look color filter and indigo plant (B) look color filter.Particularly, the first color filter 120a is formed in the first pixel region P1, and the second color filter 120b is formed in the second pixel region P2.The color-filter layer 120 that is arranged on the pixel layer 200 has predetermined pattern, so that arrange R, G and B color filter equably.Replacedly, color-filter layer 120 can also comprise the transparent color filters that is used to show white light.
Pixel electrode layer 130 comprises first and second pixel electrode PE1 and the PE2 that are respectively formed in the first and second pixel region P1 and the P2.Particularly, the first pixel electrode PE1 is formed on the first interior color filter 120a of the first pixel region P1.The first pixel electrode PE1 is electrically connected to the drain electrode 254 of TFT 250 by contact hole 122, and this contact hole 122 passes passivation layer 260 and the first color filter 120a forms.
Pixel electrode layer 130 comprises transparent conductive material, such as indium-zinc oxide (IZO), indium tin oxide (ITO) etc.
Boundary in pixel electrode layer 130 between adjacent pixel electrodes PE1 and the PE2 forms the gap.That is to say that pixel electrode PE1 in the pixel electrode layer 130 and PE2 neither are being electrically connected also not physical connection with grid line and data line 220 and 240 corresponding part places.Therefore, the color-filter layer between pixel electrode PE1 and the PE2 120 is by exposing with this grid line and data line 220 and 240 corresponding spaces.
First overlayer 141 covers that part of that color-filter layer 120 exposes between pixel electrode PE1 and PE2.That is to say, first overlayer 141 be formed on grid line and data line 220 and 240 corresponding parts on color-filter layer 120 on.First overlayer 141 is avoided direct contact between color-filter layer 120 and the oriented layer 150 by the gap between pixel electrode PE1 and the PE2.
First overlayer 141 covers the whole zone of exposing between pixel electrode PE1 and the PE2 basically.The thickness of first overlayer 141 can for about 0.4 μ m to about 0.6 μ m, and the width of first overlayer 141 can for about 5 μ m to about 8 μ m.
First overlayer 141 can comprise light curable resin or thermoset resin.When first overlayer 141 comprised the light curable resin, first overlayer 141 can utilize lithography step to form.In this case, the light curable resin can comprise negative type photoresist, positive light anti-etching agent.In addition, when first overlayer 141 comprised thermoset resin, first overlayer 141 can utilize inkjet deposited technology or planographic technology to form.In inkjet deposited technology, thermoset resin is deposited on the color-filter layer 120 between pixel electrode PE1 and the PE2.In planographic technology, thermoset resin is printed onto on the color-filter layer 120 between pixel electrode PE1 and the PE2.
Oriented layer 150 is formed on the pixel electrode layer 130 and first overlayer 141.Oriented layer 150 makes the liquid crystal molecular orientation that is arranged on oriented layer 150 upper surfaces.
Show that substrate 100 can also comprise column spacer 142, to keep showing the cell gap between substrate 100 and the relative substrate (not shown).Column spacer 142 is outstanding from showing substrate 100 in the zone that grid line 220 and data line 240 intersect, and has the height that is higher than first overlayer 141.Column spacer 142 can be formed on the TFT 250.For example, column spacer 142 can have the height of about 1.0 μ m to about 1.5 μ m, and about 10 μ m are to the width of about 15 μ m.
Column spacer 142 can be formed by the layer identical with first overlayer 141 basically, and can comprise basically and first overlayer, 141 identical materials, such as negative type photoresist, positive light anti-etching agent etc.In other embodiments, can use dissimilar structures, such as spherical structure, to keep showing the gap between substrate 100 and the relative substrate.
Fig. 3 is the planimetric map of describing based on the demonstration substrate of another embodiment of the present invention.The demonstration substrate of Fig. 3 identical with Fig. 1 and 2 basically except pixel electrode.Therefore, use identical reference number to represent and identical or similar parts described in Fig. 1 and 2, and further describe relevant with said elements of omission.
Comprise the opening 132 that the first pixel region P1 is divided into a plurality of districts with reference to figure 2 and 3, the first pixel electrode PE1.Replacedly, the first pixel electrode PE1 can also comprise a plurality of openings 132, and it is divided into several region with the first pixel region P1.Opening 132 by the first pixel electrode PE1 makes the liquid crystal in each district arrange along different directions from each other, increases the visual angle of display device thus.
Show that substrate 100 can also comprise the color-filter layer 120 (being shown in Fig. 2) and second overlayer 144.Second overlayer 144 covers the part that color-filter layer 120 exposes by the opening 132 in the first pixel electrode PE1.Second overlayer 144 is avoided direct contact the between color-filter layer 120 and the oriented layer 150 by the opening 132 in the first pixel electrode PE1.
Second overlayer 144 can be formed by identical with first overlayer 141 and column spacer 142 basically layer, and can comprise basically and first overlayer 141 and column spacer 142 identical materials.
Fig. 4 to 7 is sectional views of describing to make the method for the demonstration substrate that is shown among Fig. 1 and 2.
With reference to figure 1 and 4, the pixel layer 200 with Fig. 2 of a plurality of pixel region P1 that arrange by matrix shape and P2 is formed on the dielectric base 110.
More specifically, the first metal layer is deposited on the dielectric base 110.By this first metal layer of lithography step local etching to form grid line 220 and grid 251.Many grid lines 220 and a plurality of grid 251 can be formed by this first metal layer.
Grid line 220 defines the first pixel region P1 and the border (referring to angle shown in Figure 1) between the 3rd pixel region (not shown) below the first pixel region P1.Grid 251 is electrically connected to grid line 220, to play the gate terminal of TFT 250.Storage line 270 and storage electrode 272 by basically with dielectric base 110 on grid line 220 and grid 251 identical materials form.Replacedly, in order to improve the aperture opening ratio of each pixel region P1 and P2, can form storage line and the storage electrode that comprises transparent conductive material by additional technology.
Gate insulation layer 230 can be formed on the dielectric base 110, so that cover grid line 220 and the grid 251 that is formed on the dielectric base 110.Gate insulation layer 230 can comprise, for example, and silicon nitride (SiN x) and monox (SiO x), and can have the thickness of about 4500 .
With reference to figure 1 and 5, semiconductor layer 252a and ohmic contact layer 252b are formed on the gate insulation layer 230 successively.Semiconductor layer 252a comprises amorphous silicon (a-Si), and ohmic contact layer comprises n+ amorphous silicon (n+a-Si).Semiconductor layer 252a and ohmic contact layer 252b by photoetching process by etching partly to form and grid 251 corresponding active layers 252.
Second layer metal deposition is on gate insulation layer 230 and active layer 252.Second metal level by lithography step by etching partly to form data line 240, source electrode 253 and drain electrode 254.Replacedly, also can form many data lines 240, a plurality of source electrode 253 and a plurality of drain electrode 254 by second metal level.
Data line 240 defines the border between the first pixel region P1 and the second pixel region P2 adjacent with the lateral parts of the first pixel region P1.Source electrode 253 is separated with data line 240, and plays the source terminal of TFT 250.Drain electrode 254 is separated with source electrode 253, and plays the drain terminal of TFT 250.Drain electrode 254, storage electrode 272 and gate insulation layer 230 form holding capacitor Cst.
Source electrode and the ohmic contact layer 252b that drains between 253 and 254 are etched, so that semiconductor layer 252a is in source electrode and that part of the exposing between 253 and 254 of draining.
With reference to figure 1 and 6, passivation layer 260 is formed on gate insulation layer 230, data line 240, source electrode line 253 and drains on 254.Passivation layer 260 comprises insulating material, such as silicon nitride (SiN x), monox (SiO x) etc.The thickness of passivation layer 260 can be about 2000 .
Color-filter layer 120 is formed on the passivation layer 260.Color-filter layer 120 comprises red (R) look color filter, green (G) look color filter and indigo plant (B) look color filter.Each R, G and B color filter are corresponding to each pixel region P1 and P2.
Passing color-filter layer 120 and passivation layer 260 forms by it and makes drain electrode 254 contact holes 122 that partly expose.Replacedly, pass color-filter layer 120 and passivation layer 260 can form a plurality of contact holes.
With reference to figure 1 and 7, transparency conducting layer is formed on the color-filter layer 120.Transparency conducting layer by etching partly to form respectively and pixel region P1 and corresponding first and second pixel electrode PE1 and the PE2 of P2.Thus, form pixel electrode layer 130.
Pixel electrode layer 130 comprises transparent conductive material, such as indium-zinc oxide (IZO), indium tin oxide (ITO) etc.
The first pixel electrode PE1 is electrically connected to drain electrode 254 by the contact hole 122 that passes color-filter layer 120 and passivation layer 260 formation.
First overlayer 141 can be formed in the zone between pixel electrode PE1 and the PE2, and column spacer 142 can be formed on TFT 250 corresponding zones in.First overlayer 140 covers the exposed portions serve of the color-filter layer 120 between pixel electrode PE1 and the PE2.
First overlayer 141 be formed on and adjacent pixel electrodes PE1 and PE2 between grid line and the color-filter layer 120 on data line 220 and the 240 corresponding parts on.First overlayer 141 covers the whole exposed portions serve of the color-filter layer 120 between pixel electrode PE1 and the PE2 basically.For example, first overlayer 141 can have the thickness of about 0.4 μ m to about 0.6 μ m, and about 5 μ m are to the width of about 8 μ m.
Column spacer 142 from showing that substrate 100 gives prominence to, and has the height that is higher than first overlayer 141 in the zone that grid line 220 and data line 240 intersects.Column spacer 142 can be formed on the TFT 250.For example, column spacer 142 can have the breadth extreme of about 1.0 μ m to the height of about 1.5 μ m and about 10 μ m to about 15 μ m.
The light curable resin bed that will have minus photoresist or positive light anti-etching characteristic is coated in to have on the formation pixel electrode PE1 and the color-filter layer 120 of PE2 thereon, and the light curable resin bed is partly removed by optical technology, to form first overlayer 141 and column spacer 142.Replacedly, can form first overlayer 141 that comprises thermoset resin by inkjet deposited technology or planographic technology.Can form first overlayer that comprises various materials by the whole bag of tricks, pass oriented layer 150 migrations with the impurity of avoiding color-filter layer 120.
With reference to Fig. 1 and 2, oriented layer 150 is formed on first overlayer 141 and column spacer 142 pixel electrode layer 130 formed thereon.The pixel electrode layer 130 and first overlayer 141 are inserted between oriented layer 150 and the color-filter layer 120 to avoid oriented layer 150 directly to contact with color-filter layer 120.
Refer again to Fig. 3, opening 132 is formed in the pixel electrode layer 130, and it is divided into a plurality of districts with each pixel electrode area, increases the visual angle thus.Replacedly, can in each pixel electrode PE1 and PE2, form a plurality of openings 132.
In the time of in opening 132 is formed on the first pixel electrode PE1, second overlayer 144 is formed on the opening 132 to cover the part that color-filter layer 120 exposes by this opening 132.Second overlayer 144 avoids color-filter layer 120 directly to contact with the opening 132 of oriented layer 150 by the first pixel electrode PE1.Second overlayer 144 can be formed by identical with first overlayer 141 and column spacer 142 basically layer, and can comprise basically and first overlayer 141 and column spacer 142 identical materials.Second overlayer 144 can form simultaneously with first overlayer 141 and column spacer 142.
Fig. 8 is the sectional view of describing based on the demonstration substrate of another embodiment of the present invention.Particularly, Fig. 8 is a sectional view of describing to be shown in the line II-II ' of Fig. 3.Therefore, use identical reference number to represent described identical or similar parts with Fig. 3, and further specify relevant with said elements of omission.
With reference to figure 3 and 8, show that substrate comprises tft layer 280, color-filter layer 120, pixel electrode layer 130, the first and second overlay pattern 141a and 141b, second overlayer 144 and oriented layer 150.
Tft layer 280 comprises dielectric base 110 and the pixel layer 200 that is formed on the dielectric base 110.Pixel layer 200 comprises many grid lines 220, gate insulation layer 230, many data lines 240, thin film transistor (TFT) 250 and passivation layers 260.The tft layer 280 of Fig. 8 is identical with Fig. 2 basically.Therefore, omit further describe relevant with said elements.
Color-filter layer 120 is formed on the pixel layer 200.Color-filter layer 120 comprises a plurality of color filter 120a and 120b.In Fig. 3 and 8, the second color filter 120b in being formed on the first interior color filter 120a of the first pixel region P1 and being formed on the second pixel region P2 is different, and this second pixel region P2 is adjacent with the first pixel region P1 on a relative side of data line 240.
Be formed in the first pixel region P1 the first color filter 120a basically with the 3rd color filter 120a ' same color that is formed in the 3rd pixel region P3, the 3rd pixel region P3 is adjacent with the first pixel region P1 on the opposite side of grid line 220.That is to say that the first and the 3rd color filter 120a and 120a ' are respectively formed in the first and the 3rd pixel region P1 and the P3, and the second color filter 120b is formed in the second pixel region P2.
And the part of the corresponding color-filter layer 120 in the border between pixel region P1, P2 and the P3 is removed to form groove.Particularly, and the part of the corresponding first color filter 120a of the first borderline region B1 between the first and the 3rd pixel region P1 and the P3 is removed to form the first groove H1, and the color-filter layer 120 equitant parts in the second borderline region B2 between the first and second pixel region P1 and P2 and between the first and second color filter 120a and the 120b are removed, to form the second groove H2.In addition, be removed on the 3rd borderline region B3, to form three-flute H3 with a part that each pixel region P1, P2 and P3 is divided into the opening 132 corresponding first color filter 120a in a plurality of districts.
When the first and second overlay pattern 141a and 141b and second overlayer 144 were not formed on the color-filter layer 120, impurity may pass first, second and the 3rd borderline region B1, B2 and B3 and overflow from color-filter layer 120.Yet, in Fig. 8, to remove with first, second part with the 3rd borderline region B1, B2 and the corresponding color-filter layer 120 of B3, and the first and second overlay pattern 141a and 141b and second overlayer 144 cover this zone, so that can reduce the afterimage phenomenon that is caused by this impurity.
Replacedly, can only in the first and second borderline region B1 and B2, form first and second groove H1 and the H2.Also can only in the second borderline region B2, form the second groove H2.Replacedly, the degree of depth of each groove H1, H2 and H3 can be identical with color-filter layer 120 basically.The degree of depth of each groove H1, H2 and H3 also can be less than the thickness of color-filter layer 120.
Make pixel electrode layer 130 patternings, to form and pixel region P1, P2 and the corresponding pixel electrode PE1 of P3, PE2 and PE3.Particularly, the first pixel electrode PE1 is in the first pixel region P1, and the second pixel electrode PE2 is in the second pixel region P2.The 3rd pixel electrode PE3 is in the 3rd pixel region P3.Opening 132 is formed in each pixel electrode PE1, PE2 and the PE3, to form this district in each pixel region P1, P2 and P3.The drain electrode 254 of thin film transistor (TFT) 250 is electrically connected to each pixel electrode PE1, PE2 and PE3 by contact hole 122.
First overlayer comprises the first overlay pattern 141a and the second overlay pattern 141b.The first overlay pattern 141a is formed in the first borderline region B1 filling this first groove H1, and covers the first and the 3rd pixel electrode PE1 adjacent one another are and the end of PE3.The second overlay pattern 141b is formed in the second borderline region B2 filling the second groove H2, and covers first and second pixel electrode PE1 adjacent one another are and the end of PE2.The first and second overlay pattern 141a and 141b avoid color-filter layer 120 to expose.
Each first and second overlay pattern 141a above pixel electrode layer 130 and the height of 141b can for about 0.4 μ m to about 0.6 μ m, and the width of each first and second overlay pattern 141a and 141b can for about 5 μ m to about 8 μ m.Each first and second overlay pattern 141a and 141b can have smooth basically upper surface.In Fig. 8, the first and second overlay pattern 141a and 141b do not influence the operation of liquid crystal.That is to say that the first and second overlay pattern 141a and 141b are in liquid crystal is uncontrollable zone.Each first and second overlay pattern 141a and 141b can have smooth basically surface.Replacedly, each first and second overlay pattern can have different shape.
Column spacer 142 can be formed by identical with 141b with the first and second overlay pattern 141a basically layer, and can comprise and the first and second overlay pattern 141a and the substantially the same material of 141b.The height of column spacer 142 can for about 1.0 μ m to about 1.5 μ m, and the breadth extreme of column spacer 142 can for about 10 μ m to about 15 μ m.
Second overlayer 144 is formed in the 3rd borderline region B3 filling three-flute H3, and the part of the adjacent first pixel electrode PE1 of covering and opening 132.Second overlayer 144 avoids color-filter layer 120 to expose.
In Fig. 8, second overlayer 144 is formed in each pixel region P1, P2 and the P3, liquid crystal operate in Be Controlled in pixel region P1, P2 and the P3.Second overlayer 144 can have pinnacle shape basically, and the upper surface that this pinnacle shape has with respect to color-filter layer 120 forms the side surface (as angle be depicted in Fig. 8 in shown in) of about 12 degree to 15 degree angles.These two sides contact at the place, pinnacle of the centre of second overlayer 144.The height of second overlayer 144 and width depend on the degree of depth, width and the pitch angle of opening 132.For example, the height of second overlayer 144 of pixel electrode layer 130 tops can for about 0.4 μ m to about 0.6 μ m, and the width of second overlayer 144 can for about 5 μ m to about 10 μ m.
Oriented layer 150 is formed on pixel electrode layer 130, column spacer 142, the first and second overlay pattern 141a and the 141b and second overlayer 144.Oriented layer 150 makes liquid crystal aligning to form predetermined direction.The first and second overlay pattern 141a and 141b and second overlayer 144 are avoided arriving oriented layer 150 from the impurity of color-filter layer 120.
Fig. 9 to 13 is sectional views of describing to make the method for demonstration substrate shown in Figure 8.
With reference to figure 3 and 9, the pixel layer 200 that comprises a plurality of pixel regions of arranging by matrix shape is formed on the dielectric base 110.The technology of the formation pixel layer 200 of Fig. 9 is identical with Fig. 7 basically.Therefore, use identical reference number to represent and identical or similar parts described in Fig. 7, and further describe relevant with said elements of omission.
Color-filter layer 120 is formed on the dielectric base 110 with passivation layer 260.Particularly, a plurality of color filters are formed on the dielectric base 110 to form color-filter layer 120.
Particularly, the red color filter layer is formed on the dielectric base 110, and patterning is to form red color filter in a pixel region.The green color filter layer is formed on the dielectric base 110, and patterning is to form green color filter in the one other pixel zone.The blue color filter layer is formed on the dielectric base 110, and patterning is to form blue color filter in another pixel region.
In Fig. 9, will have single color filter 120a that plants color and be formed in first boundary B 1 on the grid line 220, and will have the color filter 120a of different colors from one another and 120b and be formed in the second borderline region B2 on the data line 240.
With reference to figure 3 and 10, form contact hole 122 so that the electrode 254 of thin film transistor (TFT) exposes.In addition, the color filter 120a on first, second and the 3rd borderline region B1, B2 and the B3 and 120b are partly removed to form first, second and three-flute H1, H2 and H3.First, second can form with contact hole 122 with three-flute H1, H2 and H3.
For example, color filter 120a and 120b are partly removed so that with three-flute H1, H2 and H3 passivation layer 260 is exposed by first, second.Pixel electrode layer 130 is deposited on contact hole 122 and first, second and three-flute H1, H2 and the H3 dielectric base 110 formed thereon.Pixel electrode layer 130 is electrically connected to drain electrode 254 by contact hole 122.
In Figure 10, first, second forms during the processing step identical with the formation of contact hole with H3 with three-flute H1, H2.Replacedly, first can form at the processing step identical with the formation of color filter 120a and 120b with H3 therebetween with three-flute H1, and only the second groove H2 forms in the processing step identical with this contact hole.
With reference to figure 3 and 11, make pixel electrode layer 130 patternings to form the first pixel electrode PE1, the second pixel electrode PE2 and the 3rd pixel electrode PE3.This first, second and the 3rd pixel electrode PE1, PE2 and PE3 be respectively formed in the first pixel region P1, the second pixel region P2 and the 3rd pixel electrode P3.That is to say, will partly remove to form first, second and the 3rd pixel electrode PE1, PE2 and PE3 with first, second and the 3rd borderline region B1, B2 and the corresponding pixel electrode layer 130 of B3.For example, have convexing to form in the opening 132 of pixel electrode layer 130 of prism shape basically, and the width of opening 132 can for about 1 μ m to about 5 μ m, improved the aperture opening ratio of pixel region P1, P2 and P3 thus.
With reference to figure 3 and 12, light curable resin bed 140 is formed on the dielectric base 110 of the pixel electrode layer 130 with patterning.The light curable resin that is formed on the dielectric base 110 can comprise negative type photoresist or positive light anti-etching agent.Light curable resin bed 140 is filled first, second and three-flute H1, H2 and H3, and covers color-filter layer 120.
Utilize mask 400 to make light curable resin bed 140 patternings, to form the first and second overlay pattern 141a and 141b, column spacer 142 and second overlayer 144.The first and second overlay pattern 141a and 141b are formed in the first and second borderline region B1 and B2 between pixel electrode PE1, PE2 and the PE3.Column spacer 142 is formed on the thin film transistor (TFT) 250.Second overlayer 144 be formed on opening 132 corresponding the 3rd borderline region B3 in.
Particularly, mask 400 comprises slit part 421, the first transmission part 422 and the second transmission part 424.Slit part 421 is corresponding to first and second borderline region B1 and the B2.The first transmission part 422 is corresponding to column spacer 142.The second transmission part 424 is corresponding to second overlayer 144, and less than the first transmission part 422.
Be formed in the first and second borderline region B1 and the B2 by slit part 421 with reference to figure 3,12 and 13, the first overlay pattern 141a and the second overlay pattern 141b.The first and second overlay pattern 141a and 141b cover first and second groove H1 and the H2.Each first and second overlay pattern 141a and 141b are outstanding from the upper surface of color-filter layer 120, and have smooth basically upper surface.In Figure 13, the first and second overlay pattern 141a and 141b do not influence the operation of liquid crystal.That is to say that the first and second overlay pattern 141a and 141b are in liquid crystal is uncontrollable zone.Each first and second overlay pattern 141a and 141b have smooth basically surface between the first and the 3rd pixel electrode PE1 and the PE3 and between the first and second pixel electrode PE1 and the PE2.For example, each first and second overlay pattern 141a above pixel electrode layer 130 and the height of 141b can for about 0.4 μ m to about 0.6 μ m, and the breadth extreme of each first and second overlay pattern 141a and 141b can for about 5 μ m to about 10 μ m.
Column spacer 142 forms by the first transmission part 422, and second overlayer 144 is formed in the 3rd borderline region B3 by the second transmission part 424.For example, column spacer 142 can have the height of about 1.0 μ m to about 1.5 μ m, and about 10 μ m are to the breadth extreme of about 15 μ m.
Second overlayer 144 is filled three-flute H3, and outstanding from color-filter layer 120.Second overlayer 144 can have prismatic basically shape.Second overlayer 144 is formed in the first pixel region P1 to control the operation of liquid crystal.For example, second overlayer 144 has prismatic basically shape, and this prism shape comprises the inclined surface of the angle θ that form extremely about 15 degree of about 12 degree.
Second overlayer 144 covers the opening 132 with preset width L, with the raising response speed of liquid crystal, and the aperture opening ratio of increase pixel region P1, P2 and P3.The height h of second overlayer 144 and width L ' depend on the width L of opening 132 and the angle θ of prism shape.For example, the height h of second overlayer 144 of pixel electrode layer 130 tops can for about 0.4 μ m to about 0.6 μ m, and the breadth extreme L ' of second overlayer 144 can for about 5 μ m to about 10 μ m.
In Figure 13, the first and second overlay pattern 141a and 141b, second overlayer 144 and column spacer 142 can comprise substantially the same material, can be formed on the substantially the same layer, and can utilize substantially the same optical technology to form.Replacedly, the first and second overlay pattern 141a and 141b can utilize thermoset resin to pass through ink-jetting process or form by planographic technology.
Oriented layer 150 (being shown among Fig. 8) is formed on the whole basically surface of dielectric base 110.
Figure 14 is the planimetric map of describing based on the demonstration substrate of one exemplary embodiment of the present invention.Figure 15 is the sectional view along the line III-III ' intercepting of Figure 14.
Refer to figs. 14 and 15, show that substrate comprises tft layer 280, color-filter layer 120, pixel electrode 130, the first overlay pattern 341a and 341b, second overlayer 344 and oriented layer 150.
Figure 14 and 15 tft layer be identical with Fig. 1 and 2 basically.Therefore, use identical reference number to represent and identical or similar parts described in Fig. 1 and 2, and further describe relevant with said elements of omission.Tft layer 280 comprises dielectric base 110 and the pixel layer on dielectric base 110 200.Pixel layer 200 comprises grid line 220, gate insulation layer 230, data line 240, thin film transistor (TFT) 250 and passivation layer 260.Replacedly, pixel layer 200 can also comprise many grid lines 220, many data lines 240 and a plurality of thin film transistor (TFT) 250.A plurality of pixel region P1, P2 and P3 limit by grid line and data line 220 and 240.
Particularly, data line 240 defines the border between the first pixel region P1 and the adjacent second pixel region P2, and grid line 220 defines the border between the first pixel region P1 and adjacent the 3rd pixel region P3.The thin film transistor (TFT) 250 and the storage capacitor electrode 272 that are electrically connected to storage line 270 are formed in the first pixel region P1.Thin film transistor (TFT) 250 comprises grid 251, active layer 252, source electrode 253 and drains 254.
Color-filter layer 120 comprises a plurality of color filter 120a and the 120b that is respectively formed in a plurality of pixel regions.The first color filter 120a of color-filter layer 120 is bent into when from having zigzag fashion when the angle that Figure 14 described is seen, and on the part of the part of the first pixel region P1 and the second pixel region P2.The second color filter 120b of color-filter layer 120 is bent into when forming zigzag fashion when the angle that Figure 14 described is seen, and on the part of the second pixel region P2.That is to say that the first and second color filter 120a and 120b are formed at least a portion of the second pixel region P2.In other words, it is possible having several color filters in pixel region.
In the 3rd pixel region P3 on the opposite side that is formed on the grid line 220 adjacent from the 3rd color filter 120a ' that when the angle that Figure 14 described is seen, has zigzag fashion with the first pixel region P1.The 3rd color filter 120 ' have substantially the same shape with the first color filter 120a.
Color-filter layer 120 has the first groove H1 and the second groove H2.Part with the grid line 220 corresponding first color-filter layer 120a in the first borderline region B1 is removed to form the first groove H1.First and second color filter 120a in the first and second color filter 120a and the partly overlapping second borderline region B2 of 120b and the part of 120b are removed to form the second groove H2.In addition, with opening 133 corresponding the 3rd borderline region B3 of the second pixel electrode PE2 in the part of the second color filter 120b be removed to form three-flute H3.The second pixel electrode PE2 is formed on the second color filter 120b.In another embodiment, can form still less groove.For example, can only form first and second groove H1 and the H2.In Figure 15, removed fully with part of first, second and three-flute H1, H2 and the corresponding color-filter layer 120 of H3 so as each first, second and three-flute H1, H2 and H3 pass color-filter layer 120 and extend enough far, thereby contact with the structure of color-filter layer 120 belows.Replacedly, can partly be removed with part of first, second and three-flute H1, H2 and the corresponding color-filter layer 120 of H3, make each this first, second and the degree of depth of three-flute H1, H2 and H3 less than the thickness of color-filter layer 120.
Pixel electrode layer 130 comprises respectively and color filter 120a and corresponding a plurality of pixel electrode PE1 of 120b and PE2.The first pixel electrode PE1 comprises the opening 133 that the first pixel region P1 is divided into a plurality of districts.
Particularly, the first pixel electrode PE1 forms and has zigzag fashion with corresponding with the zigzag fashion of the first color filter 120a.The first pixel electrode PE1 can have identical with the first color filter 120a basically shape (shown in the angle as shown in figure 14).That is to say that the first pixel electrode PE1 is formed in the first and second pixel region P1 and the P2.The second pixel electrode PE2 is formed in the second pixel region P2.The 3rd pixel electrode PE3 is adjacent with the first pixel electrode PE1 on the opposite side of grid line 220.
Each pixel electrode PE1 and PE2 are electrically connected to the drain electrode 254 of thin film transistor (TFT) 250 by contact hole 122.
First overlayer comprises the first overlay pattern 341a and the second overlay pattern 341b.The first overlay pattern 341a is formed in the first borderline region B1 with first interior between the end that is filled in the first and the 3rd adjacent pixel electrode PE1 and the PE3 groove H1.For example, the height of the first overlay pattern 341a above pixel electrode layer 130 can for about 0.4 μ m to about 0.6 μ m, and the breadth extreme of the first overlay pattern 341a can for about 5 μ m to about 8 μ m.The upper surface of the first overlay pattern 341a is smooth basically.The first overlay pattern 341a is formed in the zone of the driving that does not influence liquid crystal, and the first overlay pattern 341a can have smooth basically upper surface thus.
The second overlay pattern 341b is formed in the second borderline region B2 with second interior between the end that is filled in adjacent first and second pixel electrode PE1 and the PE2 groove H2.The second overlay pattern 341b is formed in the controlled second pixel region P2 of liquid crystal, and has prism shape basically, and this prism shape comprises the inclined surface of the angles that form extremely about 15 degree of about 12 degree.For example, the height of the second overlay pattern 341b above pixel electrode layer 130 can for about 0.4 μ m to about 0.6 μ m, and the breadth extreme of the second overlay pattern 341b can for about 5 μ m to about 10 μ m.
Column spacer 342 can be formed by identical with 341b with the first overlayer 341a basically layer, and can comprise substantially the same material.For example, the height of column spacer 342 can for about 1.0 μ m to about 1.5 μ m, and the breadth extreme of column spacer 342 can for about 10 μ m to about 15 μ m.
Second overlayer 344 is formed in the 3rd borderline region B3 filling three-flute H3, and the part of the adjacent first pixel electrode PE1 of covering and opening 133.
Second overlayer 344 is formed in the controlled second pixel region P2 of liquid crystal, and has prism shape basically.For example, second overlayer 344 has the inclined surface that forms the angles of extremely about 15 degree of about 12 degree with respect to the upper surface of color-filter layer 120.The height of second overlayer 344 and width depend on the angle of the inclined surface of the width of opening 133 and opening 133.For example, the height of second overlayer 344 above pixel electrode layer 130 can for about 0.4 μ m to about 0.6 μ m, and the breadth extreme of second overlayer 344 can for about 5 μ m to about 10 μ m.
Oriented layer 150 is formed on pixel electrode layer 130, column spacer 342, the first overlayer 341a and the 341b and second overlayer 344.Oriented layer 150 makes the liquid crystal that is positioned on the oriented layer 150 be orientated by predetermined direction.By the first and second overlayer 341a, 341b and 344 and pixel electrode layer 130 oriented layer 150 and color-filter layer 120 are separated.Thus, because overlayer 341a, 341b and 344 are inserted between color-filter layer 120 and the oriented layer 150,, these impurity do not move in the liquid crystal layer so not passing oriented layer 150.
The method of making Figure 14 and 15 demonstration substrate is identical with Fig. 9 to 13 basically, except about the second overlay pattern 341b.Thus, use identical reference number to represent and identical or similar parts described in Fig. 9 to 13, and further describe relevant with said elements of omission.
The second overlay pattern 141b of Figure 13 has smooth basically surface.Yet the second overlay pattern 341b of Figure 15 has prism shape basically.In Figure 14 and 15, the second overlay pattern 341b is formed between the pixel electrode PE1 and PE2 with zigzag fashion, so that the second overlay pattern 341b is formed in the second pixel region P2.That is to say, the second overlay pattern 341b is formed in the second pixel region P2 that liquid crystal is controlled, to have prism shape basically, the upper surface that this prism shape comprises with respect to color-filter layer 120 forms the inclined surface of about 12 degree to about 15 degree angles.
The Figure 14 and 15 the second overlay pattern 341b carry out patterning by the technology substantially the same with second overlayer, 144 patternings that make Figure 13.Thus, omit further describing about said elements.
Figure 16 is the sectional view of describing based on the display device of another embodiment of the present invention.
With reference to Figure 16, display device 300 comprises and shows substrate 100, relative substrate 500 and liquid crystal layer 600.Substrate 500 is relative with demonstration substrate 100 relatively, and is coupled with demonstration substrate 100.Liquid crystal layer 600 is inserted in and shows between substrate 100 and the relative substrate 500.
The demonstration substrate 100 of Figure 16 can be identical with the above-mentioned demonstration substrate 100 that relates to Fig. 1 and 2.Therefore, use identical reference number to represent and identical or similar parts described in Fig. 1 and 2, and further describe relevant with said elements of omission.
Substrate 500 comprises dielectric base 510, public electrode 520 and oriented layer 530 relatively.Public electrode 520 is formed on the dielectric base 510.Oriented layer 530 is formed on the public electrode 520.
Public electrode 520 is formed on and shows on the surface of substrate 100 corresponding dielectric base 510.Public electrode 520 comprises transparent conductive material, so that light can see through relative substrate 500.Transparency electrode 520 can comprise basically and pixel electrode layer 130 identical materials.The example that can be used in the transparent conductive material of public electrode 520 comprises indium-zinc oxide (IZO), indium tin oxide (ITO) etc.
Liquid crystal layer 600 comprises a plurality of liquid crystal, and it can be arranged along predetermined direction.The liquid crystal of liquid crystal layer 600 has such as the anisotropic optical characteristics of refractive index with such as the electrology characteristic of dielectric constant anisotropy.The arrangement of liquid crystal changes in response to being applied to the electric field between pixel electrode 130 and the public electrode 520.As a result, can control the light transmission of liquid crystal layer 600.
Based on this demonstration substrate, the display device making the method for this demonstration substrate and have this demonstration substrate, by the gap between the adjacent pixel electrodes, be formed on this and show that suprabasil color-filter layer does not directly contact with oriented layer, avoid the liquid crystal deterioration that causes owing to pollutant thus from color-filter layer.Therefore, reduce the afterimage that the deterioration owing to liquid crystal produces, improved image displaying quality thus.
In addition, the overlayer that is formed in the uncontrollable zone of liquid crystal has smooth basically shape, and to be formed on liquid crystal layer be that overlayer in the controlled zone has prism shape basically.In addition, overlayer can also be controlled the arrangement of liquid crystal to improve response speed of liquid crystal.
The present invention has been described with reference to one exemplary embodiment.But obviously, according to the description of front, many interchangeable improvement and variation are conspicuous for the people with art technology.Therefore, the present invention comprises all interchangeable improvement and the variations in the spirit and scope that fall into claims.

Claims (26)

1. one kind shows substrate, and it comprises:
The tft layer that comprises a plurality of pixel regions;
Be formed on the color-filter layer on this tft layer;
Be formed on a plurality of pixel electrodes on this color-filter layer, this pixel electrode defines at least one gap between the adjacent pixel electrodes;
First overlayer that provides in this gap between adjacent pixel electrodes, described first overlayer covers the part of this color-filter layer that exposes by this gap between this adjacent pixel electrodes; And
Be formed on this pixel electrode and this first supratectal oriented layer.
2. according to the demonstration substrate of claim 1, also be included in this color-filter layer and this adjacent pixel electrodes between corresponding first groove in this gap.
3. according to the demonstration substrate of claim 2, wherein this first overlayer is formed in this first groove.
4. according to the demonstration substrate of claim 1, wherein each pixel region in this tft layer comprises:
Grid line on dielectric base;
With the crossing data line of this grid line; And
Be electrically connected to the thin film transistor (TFT) of this grid line and this data line.
5. according to the demonstration substrate of claim 4, wherein this first overlayer comprises:
With this grid line and the corresponding uncontrollable zone of this data line in first overlayer that forms; And
Second overlayer that forms in the pixel region between this grid line and this data line.
6. according to the demonstration substrate of claim 5, wherein this first overlayer has smooth basically surface.
7. according to the demonstration substrate of claim 5, wherein this second overlayer has prism shape basically.
8. according to the demonstration substrate of claim 1, wherein the first tectal height of this above this pixel electrode is 0.4 μ m to 0.6 μ m.
9. according to the demonstration substrate of claim 1, wherein this first tectal width is 5 μ m to 8 μ m.
10. according to the demonstration substrate of claim 9, wherein this color-filter layer has zigzag fashion.
11. according to the demonstration substrate of claim 10, wherein this pixel electrode has the shape identical with this color-filter layer.
12. according to the demonstration substrate of claim 1, wherein each this pixel electrode comprises a plurality of districts that separated by at least one opening.
13., also comprise second overlayer of the exposed portions serve of this color-filter layer that covering exposes by this opening according to the demonstration substrate of claim 12.
14. according to the demonstration substrate of claim 13, wherein this second overlayer and this first overlayer comprise substantially the same material.
15. according to the demonstration substrate of claim 13, wherein this second overlayer has prism shape basically.
16. according to the demonstration substrate of claim 13, wherein this color-filter layer has and corresponding second groove of this opening.
17. according to the demonstration substrate of claim 16, wherein this second overlayer is formed on this second groove to cover the exposed portions serve of this color-filter layer that exposes by this opening.
18. the demonstration substrate according to claim 1 also comprises the column spacer that has greater than this first tectal height.
19. according to the demonstration substrate of claim 18, wherein this first overlayer comprises basically and this column spacer identical materials.
20. according to the demonstration substrate of claim 1, wherein each pixel electrode comprises at least one opening that this pixel electrode is divided into a plurality of districts, and this demonstration substrate also has second corresponding with this opening in this color-filter layer groove.
21. according to the demonstration substrate of claim 1, wherein each pixel electrode comprises at least one opening that this pixel electrode is divided into a plurality of districts, and a plurality of pixel regions extensions are crossed at least one district.
22. according to the demonstration substrate of claim 1, wherein each pixel electrode comprises at least one opening that this pixel electrode is divided into a plurality of districts, and each district has zigzag fashion.
23. demonstration substrate according to claim 1, wherein each pixel electrode comprises at least one opening that this pixel electrode is divided into a plurality of districts, and this demonstration substrate also comprises second overlayer of the exposed portions serve of this color-filter layer that covering exposes by this at least one opening.
24. make the method that shows substrate for one kind, it comprises:
On dielectric base, form the tft layer that comprises a plurality of pixel regions;
On this tft layer, form color-filter layer;
On this color-filter layer, form a plurality of pixel electrodes;
Between pixel electrode, form first overlayer of a part that covers this color filter; And
On this pixel electrode and this first overlayer, form oriented layer.
25. a display device, it comprises:
Show substrate, this demonstration substrate comprises:
The tft layer that comprises a plurality of pixel regions;
Be formed on the color-filter layer on this tft layer;
Be formed on a plurality of pixel electrodes on this color-filter layer, this pixel electrode defines at least one gap between the adjacent pixel electrodes;
The overlayer that provides in this gap between adjacent pixel electrodes, described overlayer covers the part of this color-filter layer that exposes by this gap between this adjacent pixel electrodes; And
Be formed on this pixel electrode and this supratectal first oriented layer;
With the relative substrate that this demonstration substrate combines, this relative basal surface shows substrate to this; And
Be inserted in the liquid crystal layer between the relative substrate of this demonstration substrate with this.
26. according to the display device of claim 25, wherein this relative substrate comprises:
Be formed in the face of the public electrode on the dielectric base of this demonstration substrate; And
Be formed on second oriented layer on this public electrode.
CNA2006101718823A 2005-11-15 2006-11-15 Display substrate, method of manufacturing the same and display device having the same Pending CN1967338A (en)

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