CN1966635A - Aqueous alkaline photoresist cleaning composition and method of use - Google Patents
Aqueous alkaline photoresist cleaning composition and method of use Download PDFInfo
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- CN1966635A CN1966635A CN 200510115307 CN200510115307A CN1966635A CN 1966635 A CN1966635 A CN 1966635A CN 200510115307 CN200510115307 CN 200510115307 CN 200510115307 A CN200510115307 A CN 200510115307A CN 1966635 A CN1966635 A CN 1966635A
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Abstract
The invention relates to a kind of aqueous phase alkaline light resistance cleaning compound which includes 1-50wt% of at least one kind alkaline substances; 0.1-20wt% of at least one kind di-amines substances and 30-98.9wt% water; the Ph value of the compound is larger than 12. The temperature of the cleaning compound in the invention can be raised or it can be diluted before being used according to the practical needs; besides, the product in the invention contains no organic solvent so it can be used safely under common operating conditions.
Description
Technical field
The present invention relates to a kind of aqueous alkaline photoresistance cleaning combination, its can be used for removing photoresistance in the gold-tinted processing procedure of semiconductor integrated circuit or liquid-crystal display or be used to clean the photoresistance coating equipment and the developing solution pipeline between residual photoresistance.Aqueous alkaline photoresistance cleaning combination of the present invention is particularly suitable for chromatic photoresist used in the color filter producing process of treatment solution crystal display.
Background technology
In semi-conductor and opto-electronics, the gold-tinted processing procedure is one of most crucial steps, the size of line width, the pattern that stacks and the resolving power that defines out via the gold-tinted processing procedure, decision differentiation from generation to generation.With opto-electronics, in the gold-tinted processing procedure, usually can earlier chromatic photoresist agent utilization rotation be applied or the mode of non-rotating coating covers on the glass substrate, and then carry out steps such as soft roasting, exposure, development.
The photoresistance scavenging solution at the gold-tinted processing procedure of routine in the past industry, mainly have following two purposes: (one) photoresistance is after overexposure and developing, this photoresistance has carried out crosslinked or acidification reaction, need clean removal, just can show wire pattern, this purposes is referred to as photoresistance more and divests effect (photoresist stripping); And (two) photoresistance is behind the process plasma etching, causing the photoresistance ashing to remain on the substrate need clean, and this is referred to as the cleaning (post-ashing cleaning) after (removing of etching residues) or the ashing that removes of etch residues more with the way.
Except can use light resistance washing agent in the gold-tinted processing procedure, the purposes of light resistance washing agent also comprises the residual photoresistance that cleans between photoresistance coating equipment and the developing solution pipeline.With opto-electronics, along with the increase of glass substrate size, the required amount that expends of developing solution is also followed to be increased, and the interior employed developing solution of industry can re-use after development in recovery at present, to reduce cost of developer solution.Yet in the process that chromatic photoresist applies, part photoresistance can spill glass substrate, apply in the board and remain in, under continual production, can make the thick photoresistance residue of accumulation one deck on the board wall, and these photoresistance residues also can see through the recovery system of developing solution, enter in the developing solution pipeline, in the bucket groove, cause on the coating equipment and the developing solution pipeline between all have the photoresistance killed to adhere to everywhere phenomenon, after the photoresistance residue peels off, can enter and influence the filtering element (cartridge) service efficiency in the developing solution pipeline, if have the photoresistance residue to peel off at the filtering element (cartridge) back segment, more can make the exit end nozzle blockage of developing solution, and influence developing manufacture process, cause processing procedure unusual phenomenon to occur.
Employed photoresistance cleaning combination in the past industry, mostly number average contains the organic solvent that can work the mischief to operator and environment, for example: propylene glycol monomethyl ether ester (PGMEA), pimelinketone (cyclohexanone), ethyl lactate (ethyl lactate), mibk (MIBK), N-Methyl pyrrolidone (NMP), gamma-butyrolactone (gama-butyrolactone) and combination thereof.
For example, United States Patent (USP) the 6th, 440, disclose a kind of photoresistance that comprises tetramethylammonium hydroxide, water-soluble amine, alkyl pyrrolidone (alkylpyrrolidone) and carbohydrate or sugar alcohol No. 326 and remove composition, wherein employed alkyl pyrrolidone is N-Methyl pyrrolidone (NMP), and its content is 10-90 weight %.
United States Patent (USP) the 6th, 638, disclose a kind of clean-out system of photoresistance residue No. 694, it comprises the amine of hydramine, 0.01-100 weight %, the water-miscible organic solvent of 5-80 weight %, the water (among the embodiment, water-content is all less than 30%) of 5-60 weight % and the corrosion inhibitor of 1-35 weight %.
Be devoted to research and develop the light resistance washing agent of avoiding the organic solvent that the use meeting works the mischief to operator and environment in the industry.
United States Patent (USP) the 6th, 635, disclose a kind of water scavenging solution that removes polymer residues such as photoresistance, polyimide, polyamic acid No. 118, it comprises alkali metal hydroxide or tetraalkylammonium hydroxide, hydramine, non-ionic type or amphoterics, polybase organic acid (polybasic organic acid) or polybase organic acid salt (salt of polybasic organic acid).
United States Patent (USP) the 6th, 245, disclose a kind of purging method of photoresistance resistates No. 155, it uses the acid photoresistance cleaning combination of a kind of pH value between 2-6, it comprises water, amine or tetraalkylammonium hydroxide and acid hydroxy group amine, and described photoresistance cleaning combination need be used with the ozone water board.
United States Patent (USP) the 5th, 599, No. 444 and the 5th, 531, No. 889 a kind of printed circuit board (PCB) (printed wire boards that are used for of announcement of United States Patent (USP); PWB) go up purging method and equipment to remove the photoresistance particle, employed photoresistance cleaning combination mainly comprises and has (R
kN)
nC
qR
mThe organic amine of general formula (organoamine), has general formula [N
yR '
w]
+[A]
-Ion nitriding compound (ion nitrogen) and basic metal or alkaline earth metal hydroxides.According to the content that its specification sheets disclosed, described organic amine is preferably alcamine compound.
Still need a kind of water photoresistance cleaning combination in the industry, form simple, do not contain the organic solvent that can work the mischief to operator and environment, and in semiconductor integrated circuit or the liquid-crystal display gold-tinted processing procedure the photoresistance residue between the photoresistance that uses or photoresistance coating equipment and the developing solution pipeline good dissolving ability is arranged.
Summary of the invention
Main purpose of the present invention is to provide a kind of aqueous alkaline photoresistance cleaning combination, and it comprises, in composition total weight, and at least a basic cpd of 1 to 50 weight %; 0.1 at least a diamine compounds of 20 weight % and the water of 30 to 98.9 weight %, and the pH value of composition is greater than 12.
Another purpose of the present invention is to provide a kind of manufacturing to be used for the method for the colored filter of liquid-crystal display, it comprises by the chromatic photoresist film on the glass substrate is contacted with aqueous alkaline photoresistance cleaning combination of the present invention, to remove the step of described chromatic photoresist film.
Another purpose of the present invention is to provide a kind of method of cleaning the chromatic photoresist residue on the chromatic photoresist coating equipment and between the developing solution pipeline, it comprises makes described chromatic photoresist coating equipment contact with aqueous alkaline photoresistance cleaning combination of the present invention with the developing solution pipeline, with from described chromatic photoresist coating equipment and remove the step of described chromatic photoresist residue between the developing solution pipeline.
Embodiment
Aqueous alkaline photoresistance cleaning combination of the present invention in composition total weight, comprises at least a basic cpd of 1 to 50 weight %; 0.1 at least a diamine compounds of 20 weight % and the water of 30 to 98.9 weight %, wherein the pH value of composition is preferably greater than 13 greater than 12.
Basic cpd used in the present invention is mineral alkali or organic bases, and wherein mineral alkali is preferably the alkali hydroxide that is selected from sodium hydroxide or potassium hydroxide or its mixture, and described organic bases be preferably have as shown in the formula hydroxide level Four ammonium compounds
Wherein, R
1, R
2, R
3And R
4Can be identical or different, independent respectively for having the alkyl or the hydroxyalkyl of 1 to 6 carbon.Described organic bases is tetramethyl ammonium hydroxide more preferably.
The content of basic cpd used in the present invention with the total restatement of composition, is 1 to 50 weight %, is preferably 10 to 50 weight %, more preferably 20 to 50 weight %.
Diamine compounds used in the present invention, be preferably selected from the group that quadrol, propylene diamine, butanediamine, pentamethylene diamine, hexanediamine, phenylenediamine, two quadrols, Triethylene Diamine and Tetrahydroxyethyl ethylenediamine and composition thereof are formed, more preferably quadrol or two quadrols or its mixture.The content of diamine compounds used in the present invention with the total restatement of composition, is 0.1 to 20 weight %, is preferably 1 to 10 weight %, more preferably 1 to 5 weight %.
Water used in the present invention is preferably deionized water, and its content with the total restatement of composition, is 30 to 98.9 weight %, is preferably 40 to 89 weight %, more preferably 45 to 79 weight %.
Can optionally further comprise in composition total weight in the cleaning combination of the present invention, at least a tensio-active agent of 0.01 to 3 weight % makes the cleaning combination surface tension less than 40mN/m.By adding tensio-active agent, can increase the wettability of cleaning combination and reduce surface tension, divest effect to improve photoresistance.Be applicable to that tensio-active agent of the present invention there is no particular restriction, can be anionic, cationic or nonionic surface active agent.
Alkaline water photoresistance cleaning combination of the present invention, for in semiconductor integrated circuit or the liquid-crystal display gold-tinted processing procedure the photoresistance residue between the photoresistance that uses or photoresistance coating equipment and the developing solution pipeline good dissolving ability is arranged, can be used in the gold-tinted processing procedure with remove photoresistance or be used to clean the photoresistance coating equipment and the developing solution pipeline between the photoresistance residue.
According to of the present invention one preferred enforcement aspect, aqueous alkaline photoresistance cleaning combination of the present invention is particularly suitable for handling the chromatic photoresist of the colored filter that is used for liquid-crystal display.
In view of the above, the method that the present invention provides a kind of manufacturing to be used for the colored filter of liquid-crystal display in addition, it comprises by the chromatic photoresist film on the glass substrate is contacted with aqueous alkaline photoresistance cleaning combination of the present invention, to remove the step of described chromatic photoresist film.
The present invention also provides a kind of method that reaches the chromatic photoresist residue between the developing solution pipeline on the chromatic photoresist coating equipment of cleaning, it comprises makes described chromatic photoresist coating equipment and developing solution pipeline contact with aqueous alkaline photoresistance cleaning combination of the present invention, with from described chromatic photoresist coating equipment and remove the step of described chromatic photoresist residue between the developing solution pipeline.
Aqueous alkaline photoresistance cleaning combination of the present invention can directly use down in normal temperature, re-uses after maybe can need diluting with ultrapure water according to actual processing procedure.On the other hand, because alkaline water photoresistance cleaning combination of the present invention does not contain the organic solvent that can work the mischief to operator and environment, therefore can be under the general operation environment use of safety, accelerate solute effect even need improve temperature, also needn't worry the harm that heats up and produced according to process requirement.Moreover, for the waste water that is produced in the processing procedure, in only needing and the pH value, can use existing sewage disposal mode to handle, need not to carry out extra wastewater treatment for organic solvent.
[embodiment]
Following examples will the present invention is further illustrated, but not in order to limit the scope of the invention, correction that any personnel that have common knowledge in this field can reach easily and change all are covered by in the scope of the present invention.
Embodiment 1
Operating method
To have the cleaning liquid composition 50ml and the photoresistance amount of polymers 0.06g that as shown in the form of back, form, and under room temperature, stir, and observation photoresistance polymer dissolution is to 1mm
2Below the required time.
Observed result
(1) result of table 1 shows, only adds basic cpd, and can't effectively in the short period of time chromatic photoresist polymer dissolution be arrived 1mm
2Below.
Table 1
| Cleaning liquid composition 50ml | The photoresistance dissolution time | ||||
| Per-cent | Red photoresistance | Green photoresistance | Blue photoresistance | ||
| Composition 1 | Potassium hydroxide | 20％ | 314 minutes | 300 minutes are not molten entirely | 132 minutes |
| Composition 2 | Potassium hydroxide | 20％ | 120 minutes are not molten entirely | 109 minutes | 40 minutes |
| Sodium hydroxide | 3％ | ||||
(2) result of table 2 shows, except that basic cpd, adds tensio-active agent (German Bi Ke again; BYK-380N) though can further shorten the chromatic photoresist polymer dissolution time, but photoresistance dissolving required time is still long.This is because add the purpose of tensio-active agent, mainly is to reduce surface tension, increase the effect that wettability is peeled off in tube wall with the increase photoresistance, but not promotes solute effect.The data of comparison sheet 2 and table 3 are added diamine compounds as can be known again in composition, could reduce the chromatic photoresist dissolution time significantly.
Table 2
| Cleaning liquid composition 50ml | The photoresistance dissolution time | ||||
| Per-cent | Red photoresistance | Green photoresistance | Blue photoresistance | ||
| Composition 3 | Potassium hydroxide | 20％ | 120 minutes | 180 minutes | 45 minutes |
| Sodium hydroxide | 2％ | ||||
| BYK-380N | 2％ | ||||
Table 3
| Cleaning liquid composition 50ml | The photoresistance dissolution time | ||||
| Per-cent | Red photoresistance | Green photoresistance | Blue photoresistance | ||
| Composition 4 | Potassium hydroxide | 20％ | 55 minutes | 15 minutes | 23 minutes |
| Sodium hydroxide | 4％ | ||||
| Quadrol | 5％ | ||||
| BYK-380N | 2％ | ||||
| Composition 5 | Potassium hydroxide | 30％ | 60 minutes | 19 minutes | 29 minutes |
| Sodium hydroxide | 4％ | ||||
| Two quadrols | 2％ | ||||
| BYK-380N | 2％ | ||||
| Composition 6 | Potassium hydroxide | 40％ | 31 minutes | 21 minutes | 24 minutes |
| Sodium hydroxide | 4％ | ||||
| Quadrol | 2％ | ||||
| BYK-380N | 0.4％ | ||||
Embodiment 2
Operating method
Using the different multiples deionized water will have the cleaning liquid composition of forming as shown in the form of back dilutes.With the cleaning liquid composition 50ml of different Dilution ratios, respectively with photoresistance amount of polymers 0.06g, stir down, and observation photoresistance polymer dissolution is to 1mm in 35 ℃
2Below the required time.
Observed result
(1) result of table 4 shows, cleaning combination according to the present invention at red photoresistance polymkeric substance, still has good solute effect after dilution.
Table 4
| Red photoresistance | The photoresistance dissolution time | ||||
| 35 ℃ are stirred down | Different Dilution ratio cleaning liquid composition 50ml | ||||
| Per-cent | Pure liquid | 1 times of dilution | 4 times of dilutions | ||
| Composition 7 | Potassium hydroxide | 40％ | 27 minutes | 60 minutes | 210 minutes |
| Sodium hydroxide | 4％ | ||||
| Quadrol | 2％ | ||||
| BYK-380N | 0.4％ | ||||
(2) result of table 5 shows, cleaning combination according to the present invention is back at green photoresistance polymkeric substance dilution, still has good solute effect.
Table 5
| Green photoresistance | The photoresistance dissolution time | ||||
| 35 ℃ are stirred down | Different Dilution ratio cleaning liquid composition 50ml | ||||
| Per-cent | Pure liquid | 1 times of dilution | 4 times of dilutions | ||
| Composition 8 | Potassium hydroxide | 40％ | 13 minutes | 31 minutes | 85 minutes |
| Sodium hydroxide | 4％ | ||||
| Quadrol | 2％ | ||||
| BYK-380N | 0.4％ | ||||
(3) result of table 6 shows, cleaning combination according to the present invention is back at blue photoresistance polymkeric substance dilution, still has good solute effect.
Table 6
| Blue photoresistance | The photoresistance dissolution time | ||||
| 35 ℃ are stirred down | Different Dilution ratio cleaning liquid composition 50ml | ||||
| Per-cent | Pure liquid | 1 times of dilution | 4 times of dilutions | ||
| Composition 9 | Potassium hydroxide | 40％ | 13 minutes | 31 minutes | 85 minutes |
| Sodium hydroxide | 4％ | ||||
| Quadrol | 2％ | ||||
| BYK-380N | 0.4％ | ||||
Embodiment 3
Operating method
Use deionized water will have the cleaning liquid composition of as shown in the form of back, forming and dilute 1.3 times.To dilute back cleaning liquid composition 50ml, and, stir, and observation photoresistance polymer dissolution is to 1mm respectively under the differing temps with photoresistance amount of polymers 0.06g
2Below the required time.
Observed result
The result of table 7 shows, along with the lifting of service temperature, can significantly promote the dissolving power of cleaning combination of the present invention for photoresistance.
Table 7
| Red photoresistance | The photoresistance dissolution time | ||||||
| 1.3 doubly dilute cleaning liquid composition | The different operating temperature | ||||||
| Per-cent | Room temperature | 35℃ | 45℃ | 55℃ | 65℃ | ||
| Composition 10 | Potassium hydroxide | 40％ | 220 minutes | 80 minutes | 40 minutes | 25 minutes | 15 minutes |
| Sodium hydroxide | 4％ | ||||||
| Quadrol | 2％ | ||||||
| BYK-380N | 0.4％ | ||||||
| Green photoresistance | The photoresistance dissolution time | ||||||
| 1.3 doubly dilute cleaning liquid composition | The different operating temperature | ||||||
| Per-cent | Room temperature | 35℃ | 45℃ | 55℃ | 65℃ | ||
| Composition 11 | Potassium hydroxide | 40％ | 180 minutes | 35 minutes | 25 minutes | 15 minutes | 10 minutes |
| Sodium hydroxide | 4％ | ||||||
| Quadrol | 2％ | ||||||
| BYK-380N | 0.4％ | ||||||
Embodiment 4
Operating method
To have the cleaning liquid composition 50ml and the photoresistance amount of polymers 0.06g that as shown in the form of back, form, and under room temperature, stir, and observation photoresistance polymer dissolution is to 1mm
2Below the required time.
Observed result
The result of table 8 shows, uses diamine compounds (two quadrols) to replace the alcamine compound (thanomin or diethanolamine) that is disclosed in the prior art, can significantly promote the dissolving power of cleaning combination for photoresistance.
Table 8
| Cleaning liquid composition 50ml | The photoresistance dissolution time | |||
| Per-cent | Red photoresistance | Green photoresistance | ||
| Composition 12 | Potassium hydroxide | 20％ | 89 minutes | 40 minutes |
| Sodium hydroxide | 4％ | |||
| Two quadrols | 2％ | |||
| Composition 13 | Potassium hydroxide | 20％ | 106 minutes | 53 minutes |
| Sodium hydroxide | 4％ | |||
| Thanomin | 2％ | |||
| Composition 14 | Potassium hydroxide | 20％ | 100 minutes | 44 minutes |
| Sodium hydroxide | 4％ | |||
| Diethanolamine | 2％ | |||
Claims (13)
1. aqueous alkaline photoresistance cleaning combination, it comprises, in composition total weight:
(a) at least a basic cpd of 1 to 50 weight %;
(b) at least a diamine compounds of 0.1 to 20 weight %; With
(c) water of 30 to 98.9 weight %,
The pH value of wherein said composition is greater than 12.
2. composition according to claim 1, wherein said basic cpd are mineral alkali or organic bases.
3. composition according to claim 2, wherein said mineral alkali is an alkali hydroxide, and described organic bases be have as shown in the formula hydroxide level Four ammonium compounds
R wherein
1, R
2, R
3And R
4Can be identical or different, independent respectively for having the alkyl or the hydroxyalkyl of 1 to 6 carbon.
4. composition according to claim 3, wherein said alkali hydroxide is sodium hydroxide or potassium hydroxide, and described hydroxide level Four ammonium compounds is a tetramethyl ammonium hydroxide.
5. composition according to claim 1, wherein said diamine compounds are to be selected from the group that is made up of quadrol, propylene diamine, butanediamine, pentamethylene diamine, hexanediamine, phenylenediamine, two quadrols, Triethylene Diamine and Tetrahydroxyethyl ethylenediamine.
6. composition according to claim 1, the consumption of wherein said basic cpd are 10 to 50 weight %; The consumption of described diamine compounds is 1 to 10 weight %; And the consumption of water is 40 to 89 weight %.
7. composition according to claim 6, the consumption of wherein said basic cpd are 20 to 50 weight %; The consumption of described diamine compounds is 1 to 5 weight %; And the consumption of water is 45 to 79 weight %.
8. composition according to claim 1, it further comprises in composition total weight, and the made cleaning combination surface tension of 0.01 to 3 weight % is less than at least a tensio-active agent of 40mN/m.
9. composition according to claim 8, wherein said tensio-active agent are anionic, cationic or nonionic surface active agent.
10. composition according to claim 1, the pH value of wherein said composition is greater than 13.
11. composition according to claim 1, wherein said photoresistance are the chromatic photoresist that is used on the colored filter of liquid-crystal display.
12. a manufacturing is used for the method for the colored filter of liquid-crystal display, its comprise by with the chromatic photoresist film on the glass substrate with contact according to the described aqueous alkaline photoresistance of arbitrary claim cleaning combination in the claim 1 to 11, to remove the step of described chromatic photoresist film.
13. one kind is cleaned the method that reaches the chromatic photoresist residue between the developing solution pipeline on the chromatic photoresist coating equipment, it comprises makes described chromatic photoresist coating equipment and developing solution pipeline and contacts according to the described aqueous alkaline photoresistance of arbitrary claim cleaning combination in the claim 1 to 11, with from removing the step of described chromatic photoresist residue between described chromatic photoresist coating equipment and the developing solution pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101153077A CN100475942C (en) | 2005-11-14 | 2005-11-14 | Aqueous alkaline photoresist cleaning composition and method of use |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101153077A CN100475942C (en) | 2005-11-14 | 2005-11-14 | Aqueous alkaline photoresist cleaning composition and method of use |
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| Publication Number | Publication Date |
|---|---|
| CN1966635A true CN1966635A (en) | 2007-05-23 |
| CN100475942C CN100475942C (en) | 2009-04-08 |
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ID=38075620
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101153077A Expired - Fee Related CN100475942C (en) | 2005-11-14 | 2005-11-14 | Aqueous alkaline photoresist cleaning composition and method of use |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163011A (en) * | 2011-04-29 | 2011-08-24 | 西安东旺精细化学有限公司 | Stripping liquid composition of photoresist |
| CN103676502A (en) * | 2012-08-31 | 2014-03-26 | 易安爱富科技有限公司 | Constituents of thick film negative photoresist stripping agent |
| CN115018068A (en) * | 2022-05-30 | 2022-09-06 | 福建天甫电子材料有限公司 | Automatic batching system and batching method for production of photoresist cleaning solution |
-
2005
- 2005-11-14 CN CNB2005101153077A patent/CN100475942C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163011A (en) * | 2011-04-29 | 2011-08-24 | 西安东旺精细化学有限公司 | Stripping liquid composition of photoresist |
| CN103676502A (en) * | 2012-08-31 | 2014-03-26 | 易安爱富科技有限公司 | Constituents of thick film negative photoresist stripping agent |
| CN115018068A (en) * | 2022-05-30 | 2022-09-06 | 福建天甫电子材料有限公司 | Automatic batching system and batching method for production of photoresist cleaning solution |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100475942C (en) | 2009-04-08 |
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