CN1966146A - Process for preparing Nd-doped lanthanum borate - Google Patents
Process for preparing Nd-doped lanthanum borate Download PDFInfo
- Publication number
- CN1966146A CN1966146A CN 200510119540 CN200510119540A CN1966146A CN 1966146 A CN1966146 A CN 1966146A CN 200510119540 CN200510119540 CN 200510119540 CN 200510119540 A CN200510119540 A CN 200510119540A CN 1966146 A CN1966146 A CN 1966146A
- Authority
- CN
- China
- Prior art keywords
- crystal
- neodymium
- labo
- doped lanthanum
- lanthanum borate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention relates to a method for preparing boracic acid lanthanum laser crystal doping with neodymium, wherein it uses molten salt growth method to grow Nd3+:LaBO3 crystal. And it uses Li3BO3 as fluxing agent; under 1300-1400Deg. C, at 15-40r/min crystal rotation speed, and at 0.5-2.0mm/h crystal drawing speed, to grow boracic acid lanthanum laser crystal doping with neodymium at high quality and large size. The inventive crystal has high quality and large size.
Description
Technical Field
The invention relates to the technical field of optoelectronic materials.
Background
The molten salt method is a commonly used growth method in the growth of artificial crystals. It usually adopts the method that the composition material of the crystal to be grown is dissolved in a proper fluxing agent, and the required crystal is obtained by slow cooling. The method is characterized by wide usability, and can find a proper fluxing agent for most crystals.
Czochralski (Czochrashi) is also a commonly used crystal growth method, which involves melting a compound and pulling it upward from the melt to obtain the desired crystal, and is characterized by a fast growth rate.
The molten salt pulling method is an improved pulling method, the growth process is similar to that of the pulling method, and a fluxing agent is adopted to reduce the melting point of the crystal and cross the phase change point of the crystal to grow the large-size and high-quality crystal. The method combines the advantages of the flux method and the Czochralski method.
Lanthanum borate (LaBO)3) As a laser host crystal material with simple structure, the crystal material is discovered by scientists as early as the sixties of the twentieth century. Two scientists, Kotru and Wanklyn, have adopted La2O3-PbO-B2O3The system grows small-sized lanthanum borate crystals, but because the fluxing agent contains PbO which is a highly toxic substance and the crystals have phase change and cannot be grown by a pulling method, the crystals develop slowly and are not practically applied to the present day. Until now, fused salt pulling method is adopted to grow neodymium-doped lanthanum borate (Nd)3+:LaBO3) Laser crystal and LaBO3There is no report on the laser working substance.
Disclosure of Invention
The invention aims to develop a novel neodymium-doped lanthanum borate (Nd)3+:LaBO3) The preparation method of the laser crystal can grow the crystal with large size and high optical quality.
The specific chemical reaction formula is as follows:
Nd2O3the amount of the silicon nitride is added according to the requirement, and the doping concentration is between 0.05 and 10at percent. The purity of the raw materials used was as follows: nd (neodymium)2O3(purity 99.999%, institute of applied chemistry of Catharanthus of the Chinese academy of sciences), Li2CO3(purity 99.99%, Shantou Guanghua chemical plant), H3BO3(purity 99.99%, Shanghai reagent Co., Ltd.), La2O3(purity 99.99%, institute of applied chemistry of Catharanthus of the department of Chinese academy of sciences).
A fused salt pulling method is adopted to grow neodymium-doped lanthanum borate laser crystal, and the main method is as follows: the fluxing agent used is Li3BO3,Li3BO3And LaBO3The molar ratio of (A) to (B) is 1: 1-1: 2. Li is weighed according to the stoichiometric ratio2CO3、H3BO3、La2O3And Nd2O3Grinding, mixing, tabletting, placing in a muffle furnace at 500 deg.C for 7 days, taking out, mashing, mixing, tabletting, and placing in a muffle furnace at 700 deg.C for 30 days. The synthesized raw materials are put into a platinum crucible to carry out fused salt pulling method growth, and (110) oriented seed crystals are adopted, the pulling speed is 0.5-2.0 mm/h, the rotating speed is 15-40 r/min, and the growth temperature is 1300 plus 1400 ℃.
Growing 3 at% Nd3+:LaBO3The crystal is subjected to analysis tests of absorption spectrum, fluorescence lifetime and the like, and the result shows that: 3 at% Nd3+:LaBO3The full width at half maximum (FWHM) of the crystal at 807nm is 11nm, and the absorption transition cross section is 2.16 × 10-20cm2The large half-peak width at 807nm is very suitable for pumping by AsGaAl semiconductor laser, which is beneficial to the absorption of the laser crystal to the pump light and improves the pumping efficiency. Its emission transition cross-section at 1057nm is 6.78X 10-19cm2The full width at half maximum (FWHM) is 6nm, the fluorescence lifetime is 82 mu s, and the large absorption and emission transition cross section is beneficial to improving the output power and the output energy of the device. Thus, Nd3+:LaBO3The crystal can obtain larger output, and is a laser crystal with high conversion efficiency, low cost, high optical quality and practical application prospect and use value.
The neodymium-doped lanthanum borate crystal has the hardness of Vickers 802.6, is moderate in hardness and is convenient to process; the crystal has excellent optical characteristics, can easily obtain linearly polarized laser output by flash lamp pumping or LD pumping, has the laser output wavelength of 1057nm, and can be used as a better laser crystal.
Detailed Description
The preferred mode of carrying out the experiments of the invention is as follows:
nd with doping concentration of 3 at% grown by fused salt pulling method3+:LaBO3Laser crystal:
accurately weighing Li according to the proportion2CO3、H3BO3、La2O3、Nd2O3(wherein: Nd)2O3Has a doping concentration of 3 at%, Li3BO3And LaBO3The molar ratio of (A) to (B) is 1: 1. ) Mixing, grinding, tabletting, and adding 80 mm phi and 100mm phi3The corundum crucible of (1) was subjected to a solid-phase reaction in a muffle furnace at 500 ℃ for 7 days. After cooling to room temperature, the raw materials synthesized for the first time are ground uniformly again, pressed into sheets and sintered again in a muffle furnace at 700 ℃ for 30 days. Putting the synthesized polycrystalline raw material into a container with the diameter of 60 mm multiplied by 50mm3In a platinum crucible, a molten salt pulling method is adopted, the growth temperature is 1350 ℃, the crystal rotating speed is 25 r/min, and the pulling speed is 1.0 mm/h, so that the size of 20 multiplied by 10mm is grown3High quality 3 at% Nd3+:LaBO3The crystal of (4).
Claims (4)
1. A preparation method of neodymium-doped lanthanum borate laser crystal is characterized by comprising the following steps: a fused salt pulling method is adopted.
2. The process according to claim 1, characterized in that: the fluxing agent used in the method is Li3BO3In an amount of Li3BO3And LaBO3The molar ratio of (1: 1) - (1: 2).
3. The process according to claim 1 or 2, characterized in that: the growth temperature of the method is 1300-1400 ℃, the pulling speed is 0.5-2.0 mm/h, and the crystal rotation speed is 15-40 r/min.
4. The process according to claim 3, characterizedin that: nd (neodymium)3+The ion doping concentration is between 0.05 and 10 at%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200510119540 CN1966146A (en) | 2005-11-14 | 2005-11-14 | Process for preparing Nd-doped lanthanum borate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200510119540 CN1966146A (en) | 2005-11-14 | 2005-11-14 | Process for preparing Nd-doped lanthanum borate |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1966146A true CN1966146A (en) | 2007-05-23 |
Family
ID=38075228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200510119540 Pending CN1966146A (en) | 2005-11-14 | 2005-11-14 | Process for preparing Nd-doped lanthanum borate |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1966146A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101498044B (en) * | 2008-01-31 | 2013-02-13 | 中国科学院福建物质结构研究所 | Neodymium boron lanthanum molybdate doped laser crystal and preparation thereof |
CN108893778A (en) * | 2018-07-16 | 2018-11-27 | 苏州四海常晶光电材料有限公司 | A kind of ABO3Mixed crystal and growing method |
-
2005
- 2005-11-14 CN CN 200510119540 patent/CN1966146A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101498044B (en) * | 2008-01-31 | 2013-02-13 | 中国科学院福建物质结构研究所 | Neodymium boron lanthanum molybdate doped laser crystal and preparation thereof |
CN108893778A (en) * | 2018-07-16 | 2018-11-27 | 苏州四海常晶光电材料有限公司 | A kind of ABO3Mixed crystal and growing method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1837418A (en) | Ytterbium doped Ca3La2(BO3)4 laser crystal, its preparation method and use | |
CN1916244A (en) | Laser crystal of lithium lanthanum molybdate with neodymium being doped, preparation method and usage | |
CN101089242A (en) | Doped neodymium lithium lanthanum barium tungstate laser crystal and its preparation method and usage | |
CN1837421A (en) | Neodymium doped LiGd(MoO4)2 laser crystal, its preparation method and use | |
CN101037796A (en) | Neodymium boracic acid oxygen calcium gadolinium lanthanum doped laser crystal and preparation method and usage thereof | |
CN1837422A (en) | Self-activating laser crystal of LiNd(WO4)2, its preparation method and use | |
CN101212122A (en) | Ytterbium doped gadolinium lanthanum calcium oxoborate laser crystal, producing method, and purpose | |
CN1966146A (en) | Process for preparing Nd-doped lanthanum borate | |
CN101037804A (en) | Yttrium erbium ion gadolinium sodium molybdate double-doped laser crystal and preparation method and usage thereof | |
CN101078133A (en) | Neodymium-doping lanthanum calcium vanadate laser crystal and its preparation method and use | |
CN101037802A (en) | Yttrium neodymium gadolinium barium molybdate doped laser crystal and preparation method and usage thereof | |
CN1837419A (en) | Ytterbium doped Y0.8LaCa4O(BO3)3 laser crystal, its preparation method and use | |
CN1958881A (en) | Boratory laser crystal Li6R(1-x)REx(B03)3 and preparation method, and application | |
CN1966780A (en) | Neodymium-doped sodium-yttrium molybdenate laser crystal and its preparation method and use | |
CN1556261A (en) | Thulium adulterated yttrium aluminate laser crystal with oulput 2 micron wave band and its preparation technology | |
CN100368603C (en) | Neodymium doped lithium lanthanum tungstate lacer crystla and its prepn | |
CN1259462C (en) | Nd doped yttrium-barium borate laser crystal and its preparing method and use | |
CN1566415A (en) | Neodymium-doped strontium-lanthanum borate ( Sr3La(BO3)3 ) laser crystal and its preparation method | |
CN101498044B (en) | Neodymium boron lanthanum molybdate doped laser crystal and preparation thereof | |
CN1259463C (en) | Nd doped withe scandium-strontium-yttrium borate laser crystal and its preparing method and use | |
CN1664177A (en) | Metaborate laser crystal and its preparation method and use | |
CN100415949C (en) | Blended ytterbium boric acid Gd yttrium oxygen calcium self-frequency doubling laser crystal | |
CN1664178A (en) | Tungstate laser crystal and its preparation method and use | |
CN1966781A (en) | Neodymium-doped sodium-yttrium molybdenate laser crystal and its preparation method and use | |
CN1782144A (en) | Fs laser crystal of ytterbium doped strontium yttrium borate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20070523 |