CN101498044B - Neodymium boron lanthanum molybdate doped laser crystal and preparation thereof - Google Patents
Neodymium boron lanthanum molybdate doped laser crystal and preparation thereof Download PDFInfo
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- CN101498044B CN101498044B CN 200810070570 CN200810070570A CN101498044B CN 101498044 B CN101498044 B CN 101498044B CN 200810070570 CN200810070570 CN 200810070570 CN 200810070570 A CN200810070570 A CN 200810070570A CN 101498044 B CN101498044 B CN 101498044B
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- lanthanum molybdate
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Abstract
The invention relates to a laser crystal doped by nd-b lanthanum molybdate and a preparation method thereof, which belong to the field of artificial lenses. The laser crystal belongs to a monoclinic system, has a molecular formula of Nd<3>: LaBMoO6, and the doping density of Nd<3> is between 0.5 at. percent and 15 at. percent. The laser crystal grows by a pulling method and has a growth temperature of 1090 DEG C, a crystal rotating speed of 10-30 round/min and a pull speed of 0.5-1 mm/h. The crystal is a novel laser crystal and can output laser with a wavelength approximately from 1060nm to 900nm. The invention has the advantages of simple technology, high production speed and low cost, and the grown crystal has the advantages of great hardness, uniform components, large size and good optical quality.
Description
Technical field
The invention belongs to the artificial lens field.
Background technology
Laser crystals is the operation material of solid statelaser, and it refers to take crystal as matrix, by discrete luminescence center absorptive pumping luminous energy and be translated into the luminescent material of Laser output.Solid laser working substance is comprised of substrate material and active ions, and its various physics and chemistry character are mainly by the substrate material decision, and its spectral response curve and fluorescence lifetime etc. are then determined by the level structure of active ions.From nineteen sixty, succeeded in developing since the synthetic ruby pulsed laser, up to now, found hundreds of laser crystalss, but because of a variety of causes, the laser crystals that can really obtain practical application only has ten to plant.
At present, most widely used laser crystals is yttrium aluminum garnet (YAG) crystal of Nd ion doped, and it has preferably various physics and chemistry performances, and is easy to grow high optical quality, large-sized gem-quality crystal.But it is narrow that it exists spectral line of absorption, is unwell to the shortcoming of carrying out pumping with LD, and the LD pumping will be the developing direction of laser pumping source from now on.
At present both at home and abroad all actively to seek various physics, chemical property and mechanical property excellent, and be easy to the high-quality laser crystal material that grows high optical quality, large size and be suitable for the LD pumping.Neodymium ion is used as active ions widely owing to having preferably spectrum property.Molybdate and borate become excellent substrate material owing to having good various physicochemical property.
Summary of the invention
Purpose of the present invention just is to develop a kind of new laser crystals, can directly use photoflash lamp and LD pumping, has the crystalline material that higher conversion efficiency can be launched 1060nm and 900nm wave band of laser.The chemical constitution of the laser crystals that the present invention prepares is Nd
3+: LaBMoO
6, Nd
3+Doping content is between 0.5at.-15at.%.
The present invention includes following technical scheme:
1. neodymium boron lanthanum molybdate doped laser crystal, the chemical constitution of this crystal is Nd
3+: LaBMoO
6, Nd
3+Concentration range at 0.5at.-15at.%, belong to oblique system, spacer is P2
1/ c, unit cell parameters is a=10.2982
, b=4.1629
, c=23.906
, β=115.697 °, V=923.5
3, Dc=4.915g/cm
3
2. the preparation method of the laser crystals of an item 1, this preparation method is crystal pulling method, comprises the steps: the first step, with La
2O
3, H
3BO
3, MoO
3And Nd
2O
3Raw material is weighed by required proportioning, mixes, and grinds, and 850-950 ℃ of sintering namely obtains neodymium-doped boron lanthanum molybdate polycrystal raw material; Second step, in Platinum crucible, pulling growth goes out crystal under the oxygen-enriched atmosphere, and the parameter of crystal growth is 1090 ℃ of growth temperatures, and pulling speed is 0.5～1.0 millimeter/hour, and the crystal rotating speed is 10～30 rev/mins, namely obtains neodymium-doped boron lanthanum molybdate crystal.
3. the purposes of the laser crystals of an item 1, this crystal are used for solid statelaser as working-laser material, produce the Laser output of 1060nm and 900nm wavelength.
Laser crystals preparation technology of the present invention is simple, fast growth, with low cost; Institute's growing crystal has advantages of that hardness is large, component is even, size is large and optical quality is good.
Embodiment
Embodiment 1: with Czochralski grown doping 1.61at.%Nd
3+The Nd of ion
3+: LaBMoO
6Laser crystals.
The first step is with initial feed La
2O
3, H
3BO
3, MoO
3And Nd
2O
3Weigh by required proportioning, mix, grind, at 850-950 ℃ of sintering.After the taking-up, grind again, mix, 850-950 ℃ of sintering once namely obtains neodymium-doped boron lanthanum molybdate polycrystal raw material; Second step, in Platinum crucible, the lower Czochralski grown that adopts of oxygen-enriched atmosphere (such as air), the parameter of crystal growth is 1090 ℃ of growth temperatures, pulling speed is 0.5～1.0 millimeter/hour, and the crystal rotating speed is 10～30 rev/mins, namely obtains the neodymium-doped boron lanthanum molybdate crystal of the present invention's development.Analytical test by to this absorption of crystal spectrum, fluorescence spectrum and fluorescence lifetime etc. obtains the main absorption peak of this crystal at 802nm, and peak width at half height (FWHM) is 8.37nm, and absorption crosssection is 2.37 * 10
-20Cm
2, the peak width at half height of 1060nm place emission peak is 19.97nm, emission transition cross section 3.17 * 10
-20Cm
2, fluorescence lifetime is 104.9 μ s.
Claims (3)
1. neodymium boron lanthanum molybdate doped laser crystal, it is characterized in that: the molecular formula of this crystal is Nd
3+: LaBMoO
6, Nd
3+Doping content belongs to oblique system between 0.5at.-15at.%, spacer is P2
1/ c, unit cell parameters is
β=115.697 °,
Dc＝4.915g/cm
3。
2. the preparation method of the neodymium boron lanthanum molybdate doped laser crystal of a claim 1, this preparation method is crystal pulling method, comprises the steps: the first step, with La
2O
3, H
3BO
3, MoO
3And Nd
2O
3Raw material is weighed by required proportioning, mixes, and grinds, and 850-950 ℃ of sintering namely obtains neodymium-doped boron lanthanum molybdate polycrystal raw material; Second step, in Platinum crucible, pulling growth goes out crystal under the oxygen-enriched atmosphere, and the parameter of crystal growth is 1090 ℃ of growth temperatures, and pulling speed is 0.5～1.0 millimeter/hour, and the crystal rotating speed is 10～30 rev/mins.
3. the purposes of the neodymium boron lanthanum molybdate doped laser crystal of a claim 1 is characterized in that: this crystal is used for solid statelaser as working-laser material, produces the Laser output of 1060nm and 900nm wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810070570 CN101498044B (en) | 2008-01-31 | 2008-01-31 | Neodymium boron lanthanum molybdate doped laser crystal and preparation thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810070570 CN101498044B (en) | 2008-01-31 | 2008-01-31 | Neodymium boron lanthanum molybdate doped laser crystal and preparation thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101498044A CN101498044A (en) | 2009-08-05 |
| CN101498044B true CN101498044B (en) | 2013-02-13 |
Family
ID=40945310
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810070570 Expired - Fee Related CN101498044B (en) | 2008-01-31 | 2008-01-31 | Neodymium boron lanthanum molybdate doped laser crystal and preparation thereof |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208735B (en) * | 2010-03-31 | 2014-10-29 | 中国科学院福建物质结构研究所 | Rare earth activated boron molybdate crystal-based Terahertz laser |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5734960A (en) * | 1994-08-29 | 1998-03-31 | Osram Sylvania Inc. | Process for producing KS molybdenum |
| CN1250115A (en) * | 1998-10-05 | 2000-04-12 | 中国科学院福建物质结构研究所 | Self-frequency doubling laser crystal of Nd-doped low temperature phase lanthanum-scandium borate |
| CN1505224A (en) * | 2002-12-02 | 2004-06-16 | 中国科学院福建物质结构研究所 | Nd-doped lanthanum calcium oxygen borate laser crystal, method for making same and use thereof |
| CN1916244A (en) * | 2005-08-15 | 2007-02-21 | 中国科学院福建物质结构研究所 | Laser crystal of lithium lanthanum molybdate with neodymium being doped, preparation method and usage |
| CN1966146A (en) * | 2005-11-14 | 2007-05-23 | 中国科学院福建物质结构研究所 | Process for preparing Nd-doped lanthanum borate |
-
2008
- 2008-01-31 CN CN 200810070570 patent/CN101498044B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5734960A (en) * | 1994-08-29 | 1998-03-31 | Osram Sylvania Inc. | Process for producing KS molybdenum |
| CN1250115A (en) * | 1998-10-05 | 2000-04-12 | 中国科学院福建物质结构研究所 | Self-frequency doubling laser crystal of Nd-doped low temperature phase lanthanum-scandium borate |
| CN1505224A (en) * | 2002-12-02 | 2004-06-16 | 中国科学院福建物质结构研究所 | Nd-doped lanthanum calcium oxygen borate laser crystal, method for making same and use thereof |
| CN1916244A (en) * | 2005-08-15 | 2007-02-21 | 中国科学院福建物质结构研究所 | Laser crystal of lithium lanthanum molybdate with neodymium being doped, preparation method and usage |
| CN1966146A (en) * | 2005-11-14 | 2007-05-23 | 中国科学院福建物质结构研究所 | Process for preparing Nd-doped lanthanum borate |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平8-225400A 1996.09.03 |
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| CN101498044A (en) | 2009-08-05 |
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