CN1962544A - Resistivity-controllable conductive silicon carbide foam ceramic material and its preparing process - Google Patents
Resistivity-controllable conductive silicon carbide foam ceramic material and its preparing process Download PDFInfo
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Abstract
The invention discloses a preparing method of conductive carbofrax foaming ceramic with controllable resistance rate, which adopts polygon patterned sealed ring as basic unit with each basic unit connecting to form three-dimensional communicating network, wherein the corresponding density of ceramic bar of polygon patterned sealed ring is not less than 99%; the component contains 80-96% carbofrax, 10-2% metal phase and 10-2% silicon phase; the changing scale of resistance rate is 5-0.01 omega .cm.
Description
Technical field
The present invention relates to conductive silicon carbide foam ceramic material, conductive silicon carbide foam ceramic material that specifically a kind of resistivity is controlled and preparation method thereof.
Background technology
Foamed ceramics has good transparent performance, adsorptive power and big specific surface area, reactant gases is by the foamed ceramics duct of coated catalysts, to improve transformation efficiency and speed of response greatly, catalyzer porous support commonly used at present mainly is aluminum oxide, silicon oxide and trichroite etc.Because these oxide ceramics are isolators, being difficult to directly energising and realizing initiatively heating, can only realize katalysis after adding the temperature of reaction of pining for reaching catalyzer passive.Thereby they are restricted in the field application that needs reach optimal reaction temperature fast.
The foam silicon carbon pottery have high-specific surface area, with the good exchange efficiency characteristics of gas, and have excellent mechanical behavior under high temperature, chemical stability, characteristic of semiconductor, extremely strong resistance to oxidation, wash away, characteristic such as acid-alkali-corrosive-resisting and electrical property are adjustable, particularly can realize initiatively heating, reach the purpose of the catalytic efficiency of giving full play to catalyzer by the resistivity of regulating it.Be applied to the gas catalysis field of purification as support of the catalyst.
Silicon carbide has characteristic of semiconductor, and pure silicon carbide resistivity is very big, generally 10
14More than the m Ω; Can make its resistivity decreased to 10 by mixing up
-1Below the m Ω, the variation range of resistivity is relevant with adulterated kind and quantity.Silicon carbide has the characteristics of negative temperature coefficient, and promptly temperature raises, resistivity decreased.By changing metal doping amount such as foam silicon carbon pottery titanium, can improve its conductivity, realize that specific conductivity is controlled, for the active heating that realizes the foam silicon carbon pottery, the catalytic efficiency that improves the catalyzer that supports lay the foundation.
Present foam silicon carbide ceramics has following four kinds of methods preparation: powder sintering, solid state reaction sintering process, contain silicone resin pyrolysis method and vapour deposition process.
Powder sintering is divided into two kinds of different processes again.After the first will contain the slip of the carborundum powder of a certain amount of sintering aid and linking agent (as ethyl silicate hydrolyzed solution, silicon sol etc.) furnishing suitable concn, soak and hang on the polyurethane foam, after solidifying drying, after deviating from linking agent and polyurethane foam, sintering just obtains foamed silicon carbide ceramics; Another kind method is with after containing the carborundum powder and strain shape whipping agent uniform mixing of sintering aid, with mold pressing or pouring procedure moulding.Deviate from whipping agent by fusing or gasification, carry out high temperature sintering then to obtain the spumescence silicon carbide ceramics.
The solid state reaction sintering process is with strain shape whipping agent and silica flour and the moulding of carbon dust uniform mixing.Deviate from whipping agent by fusing or gasification, through promptly obtaining the spumescence silicon carbide ceramics behind the pyroreaction sintering.
Containing the silicone resin pyrolysis method is that the organosilicon presoma is made high-molecular gel, obtains the foamed silicone resin that contains after deviating from the organic solvent in the gel, carries out pyrolysis and promptly obtain the spumescence silicon carbide ceramics after fully giving oxidation.
To be the method for utilizing chemical vapour deposition with silicon carbide deposit on the netlike carbon fiber knitted body vapour deposition process and obtain the spumescence silicon carbide ceramics.
Above-mentioned four kinds of methods all have deficiency separately.First three methods is not owing to there is hot pressing, and initial density is not high, and the spumescence silicon carbide ceramics of preparation is not fine and close, thereby intensity is low, and solid state reaction sintering process and contain silicone resin pyrolysis method volume of voids and size is difficult to control; And vapour deposition process faces the cost of manufacture height, and speed waits problem slowly.
Summary of the invention
The object of the present invention is to provide controlled conductive silicon carbide foam ceramic material of a kind of resistivity and preparation method thereof, with the characteristics that the conductive silicon carbide foam ceramic of this method preparation has that resistivity is controlled, intensity is high, volume of voids and size are easy to control, cost of manufacture is lower.
For achieving the above object, the technical solution used in the present invention is:
The conductive silicon carbide foam ceramic material that a kind of resistivity is controlled, percentage ratio meter by weight, its composition is made up of the silicon of 80%～96% silicon carbide, 10%～2% metallographic phase and 10%～2%.
Described foam silicon carbide ceramics is an elementary cell with polygonal Closed loop, and each elementary cell is interconnected to form three-dimensional networks; Constitute relative density 〉=99% of the unitary ceramic muscle of Polygons Closed loop, average grain size is at 1.5 μ m-15 μ m.The variation range of resistivity is: 5 Ω .cm-0.01 Ω .cm. Described metallographic phase is titanium, nickel, iron, tungsten, molybdenum, vanadium, aluminium, copper or zinc.
The preparation of the conductive silicon carbide foam ceramic that described resistivity is controlled is: the polymer that carborundum powder, metal powder and high carbon output rate is high is mixed and made into slip.Select the polyurethane foam plastic in suitable aperture, and be cut into needed shape and size, then it is immersed in slip, after the taking-up, remove unnecessary slip, semicure with extruding, wind, mode such as centrifugal.High temperature, high pressure solidify in high pressure vessel, to improve the initial density that the foamed ceramics skeleton gives the system body.Foams after solidifying are carried out Polyurethane remove and the resin pyrolysis in vacuum or inert atmosphere furnace, obtain and the equiform spumescence carbon skeleton of forming by silicon carbide, metal powder and RESEARCH OF PYROCARBON of original foam polyurethane.
Carbon in the carbon skeleton and gas phase or liquid-phase silicone reaction generate silicon carbide, and combine with original silicon-carbide particle in the foam framework, simultaneously, metal powder enters in the silicon carbide crystal boundary gap by the mode of diffusion, increases the concentration of electronic carrier and ionic carrier; Gu molten metal powder and carbon, pasc reaction generate conductive phase.Thereby obtain conductive silicon carbide foam ceramic.
The negative temperature coefficient feature that adulterated foam silicon carbon pottery presents, this is that itself characteristic of semiconductor by the foam silicon carbon pottery is determined that excessive conductive phase doping will make the foam silicon carbon pottery show the positive temperature coefficient feature; The add-on of metal powder obviously influences the variation of foam silicon carbide ceramics resistivity.
Specific operation process is as follows: with carborundum powder, macromolecular material and metal powder is basic raw material, is template with the porous plastics,
(1) slip preparation
With solute carborundum powder, macromolecular material, metal powder and solidifying agent and etoh solvent 4～5: 5～6 mixed by weight, ball milling after mechanical stirring filters, slip, the solute total amount is 5～60% of a total amount in the slurry solution; The carborundum powder mean particle size is 1.5-15 μ m; Weight percent is 70～20wt%: 20～50wt%: 1～10wt%: 1～20wt% between carborundum powder, macromolecular material, metal powder and the solidifying agent;
(2) soak extension
Polyamine fat vacuole foam is cut into desired shape and size, immerse in the slip equably, take out afterwards to squeeze and go unnecessary slip, employing air-blowing or centrifugal mode to remove unnecessary slip, the heating semicure repeats repeatedly, reach needed volume parts, obtain the foam silicon carbide ceramics presoma; Semicure under 40～100 ℃ of temperature, time 1-2 minute;
(3) hot-pressing densification
Foam silicon carbide ceramics skeleton presoma is put into high pressure vessel, charge into nitrogen or argon gas high temperature, high pressure curing, obtain fine and close foam silicon carbide ceramics carbon skeleton; Pressure be 5-22MPa, temperature at 100-300 ℃, heat-up rate 1-5 ℃, be incubated 10 minutes-2 hours;
(4) pyrolysis
The foam silicon carbide ceramics carbon skeleton of densification is carried out pyrolysis under argon gas or protection of nitrogen gas atmosphere or vacuum condition, generate the foamed ceramics carbon skeleton; Wherein the temperature rise rate per minute is 1～10 ℃, is warming up to 800～1400 ℃, is incubated 0.5～2 hour;
(5) siliconising
The sic foam carbon skeleton of the densification after the pyrolysis is carried out reaction sintering, add carbon skeleton weight 2-5 silica flour doubly, be placed on the carbon skeleton surface, utilize liquid phase or gas-phase reaction, the carbon reaction that silicon that the silicon source provides and pyrolysis produce generates β-SiC.β-SiC is distributed between α-SiC crystal boundary in the protocorm; combine with α-SiC; make the densification of foam silicon carbide ceramics skeleton muscle; reaction sintering carries out under protective atmosphere or vacuum condition; temperature rise rate is 5～15 ℃ of per minutes; temperature is 1500～2200 ℃, is incubated 0.5～5 hour, gets conductive silicon carbide foam ceramic material.
Described macromolecular material can be selected from one or more of Resins, epoxy, resol and furfuryl resin; Can also sneak into equal granularity in described macromolecular material is the silicon carbide of 1.5 μ m-15 μ m, and the 40-60% volume is good; Adulterated metal powder is selected from metal powders such as titanium, nickel, iron, tungsten, molybdenum, vanadium, aluminium, copper or zinc; Mean particle size is 2 μ m-20 μ m, and add-on is 2-10%.
Described ethanol volumetric concentration is 〉=95%, and silica flour purity is 〉=95%.
Described solidifying agent is that product, oxalic acid or citric acid etc. are taken off in tosic acid, five Lip rivers; Content is preferably the 1-40% of amount of resin, is good with 2-8%; Temperature rise rate during described pyrolysis is preferably 2-4 ℃/min.
The present invention has following beneficial effect:
1, the resistivity of foam silicon carbide ceramics is controlled
The present invention adopts the mode of doping metals powder in the original slip of preparation foam silicon carbide ceramics to control the resistivity of foam silicon carbide ceramics.In the reaction sintering process, metal powder enters in the silicon carbide crystal boundary gap by the mode of diffusion, increases the concentration of electronic carrier and ionic carrier; Gu molten metal powder and carbon, pasc reaction generate conductive phase, this dual mode all can change the resistivity of foam silicon carbide ceramics.The variation range of resistivity is: 5 Ω .cm-0.01 Ω .cm.
2, fine and close, intensity is high.
The present invention adopts the method for hot-press solidifying foamed ceramics skeleton presoma, to improve its initial density; And adopt the siliconising reaction to form foam silicon carbide ceramics.Prepared foam silicon carbide ceramics muscle has relative density and the even fine and closely woven microstructure (seeing accompanying drawing 1,2,3) near 100%.This is that other method institute is inaccessiable except that the gas phase deposition method, but cost is far below CVD (Chemical Vapor Deposition) method, the both easier control of volume fraction of thickness of muscle simultaneously.Thereby this method can obtain conductive silicon carbide foam ceramic material with low preparation cost.
3, do not need mould can realize nearly end form moulding, reduce the preparation tooling cost.This point is mainly by two aspect reason decisions: the first, and as the primary template of foamed ceramics, polyurethane foam plastic very easily is processed into arbitrary shape; The second, forming silicon carbide reaction-sintered by the reaction of siliconising in carbon skeleton almost is the process of a no deformation rate.
4, foamed ceramics aperture, voidage are easy to control.Polyurethane foam plastic is as the primary template that obtains final foamed ceramics, at first utilize the pyrolytic reaction of the resin of high carbon output rate to make the foamy carbon skeleton that contains certain proportion silicon carbide, then obtain the geometry foam silicon carbide ceramics similar by carrying out liquid state or gaseous state siliconising reaction thereon to original foamed resin.
The present invention proposes a kind of foam silicon carbide ceramics method of new, cheap, densification that preparation resistivity is controlled in a word.In the method, metal powder doping, hot-press solidifying, polymer pyrolysis and reaction sintering are combined, and make that the foam silicon carbide ceramics of preparing has that resistivity is adjustable, pore dimension and characteristics such as void density is easily controlled, ceramic muscle density height (can reach 100%), muscle condition of surface can arbitrarily design, foams intensity height.These characteristics are more widely used conductive silicon carbide foam ceramic.Below by embodiment in detail the present invention is described in detail.
Description of drawings
Fig. 1 is the macro morphology figure that mixes up the conductive silicon carbide foam ceramic of titanium valve;
Fig. 2 is transformed into TiSi for titanium after mixing up titanium valve
2The XRD figure spectrum of the foam silicon carbon ceramic skeleton of conductive phase;
Fig. 3 is inner microstructure (pattern) figure of foam silicon carbon pottery muscle (fracture) that mixes up titanium valve.
Embodiment
Weight ratio was respectively 55%: 35%: 5%: 5% mean particle size 2 μ m carborundum powders, ammonia resol, mean particle size 5 μ m titanium valves, tosic acid are dissolved in the dehydrated alcohol altogether, make slip (solutes content is 30%), the polyamine fat vacuole foam of aperture 1mm cut into require to immerse equably in the described slip after the size, soaked 1 minute, squeeze after taking out and remove unnecessary slip, air-dry back 50 ℃ of semicures 10 minutes, put into high pressure vessel, charging into nitrogen makes air pressure reach 12MPa, be warming up to 250 ℃, be incubated curing in 1 hour.Pyrolysis under argon shield generates carbon skeleton; Wherein the temperature rise rate per minute is 2 ℃, is warming up to 800 ℃, is incubated 0.5 hour.The titaniferous carbon skeleton is carried out the vacuum siliconising (silica flour that adds 3 times of carbon skeleton weight, be placed on the carbon skeleton surface), 1500 ℃ of temperature of reaction, temperature rise rate is 10 ℃/minute, be incubated 1 hour, get conductive silicon carbide foam ceramic material, room temperature resistivity is: 0.0312 Ω .cm, muscle density are 99%, and the carborundum grain granularity is .2～8 μ m.
Weight ratio was respectively 37%: 55%: 5%: 3% mean particle size 2 μ m carborundum powders, Resins, epoxy (trade mark is EP0141-310), mean particle size 3.5 μ m titanium valves, tosic acid are dissolved in the dehydrated alcohol altogether, make slip (solutes content is 40%), the polyamine fat vacuole foam of aperture 2mm cut into require to immerse equably in the described slip after the size, soaked 1 minute, squeeze after taking out and remove unnecessary slip, air-dry back 50 ℃ of semicures 10 minutes, put into high pressure vessel, charging into nitrogen makes air pressure reach 10MPa, be warming up to 200 ℃, be incubated curing in 1 hour.Pyrolysis under argon shield generates carbon skeleton; Wherein the temperature rise rate per minute is 2 ℃, is warming up to 900 ℃, is incubated 0.5 hour.Carbon skeleton is carried out the vacuum siliconising (silica flour that adds 2 times of carbon skeleton weight, be placed on the carbon skeleton surface), 1600 ℃ of temperature of reaction, temperature rise rate is 10 ℃/minute, be incubated 1 hour, get conductive silicon carbide foam ceramic material, room temperature resistivity is: 0.0853 Ω .cm, muscle density are 99%, and the carborundum grain granularity is 2～8 μ m.
With weight ratio respectively is that 50% heat-reactive phenolic resin and furfuryl resin are dissolved in the dehydrated alcohol altogether, make slurry solution, the mean particle size that again weight ratio is respectively 94%: 6% is that the carborundum powder of 5 μ m and the titanium valve of mean particle size 3.5 μ m evenly add in the above-mentioned solution, forms resin/carborundum powder volume than the slip (solutes content is 20%) that is 1/9.The polyamine fat vacuole foam of aperture 2mm cut into require to immerse equably in the described slip after the size, take out the back and squeeze and remove unnecessary slip, soaked 1 minute, air-dry back 50 ℃ of semicures 10 minutes are put into high pressure vessel, charge into nitrogen and make air pressure reach 11MPa, be warming up to 230 ℃, be incubated curing in 1 hour.Pyrolysis under argon shield generates carbon skeleton; Wherein the temperature rise rate per minute is 2 ℃, is warming up to 1200 ℃, is incubated 0.5 hour.After the pyrolysis, carry out the vacuum siliconising (silica flour that adds 5 times of carbon skeleton weight, be placed on the carbon skeleton surface), 1850 ℃ of temperature of reaction, temperature rise rate is 15 ℃/minute, is incubated 1 hour, gets conductive silicon carbide foam ceramic material, room temperature resistivity is: 0.0624 Ω .cm, muscle density are 99%, and the carborundum grain granularity is 5～10 μ m.
Embodiment 4
Weight ratio was respectively 58%: 35%: 2%: 5% mean particle size 1.5 μ m carborundum powders, boron bakelite resin, the titanium valve of mean particle size 3.5 μ m, five Lip rivers are taken off product and are dissolved in the dehydrated alcohol altogether, make slip (solutes content is 30%), the polyamine fat vacuole foam of aperture 2mm cut into require to immerse equably in the described slip after the size, soaked 1 minute, squeeze after taking out and remove unnecessary slip, air-dry back 50 ℃ of semicures 20 minutes, put into high pressure vessel, charging into nitrogen makes air pressure reach 18MPa, be warming up to 260 ℃, be incubated curing in 1 hour.Pyrolysis under argon shield generates carbon skeleton; Wherein the temperature rise rate per minute is 2 ℃, is warming up to 1400 ℃, is incubated 0.5 hour.After the pyrolysis, carry out the vacuum siliconising (silica flour that adds 3 times of carbon skeleton weight, be placed on the carbon skeleton surface), 2000 ℃ of temperature of reaction, temperature rise rate is 10 ℃/minute, is incubated 1 hour, gets conductive silicon carbide foam ceramic material, room temperature resistivity is: 0.0436 Ω .cm muscle density is 100%, and the carborundum grain granularity is 1.5～8 μ m.
Embodiment 5
Weight ratio is respectively 30% and 65% heat-reactive phenolic resin and furfuryl resin and 5% 5 Lip river takes off product and is dissolved in the dehydrated alcohol altogether, make slurry solution, the mean particle size that again weight ratio is respectively 92%: 8% is that the carborundum powder of 5 μ m and the titanium valve of mean particle size 5 μ m evenly add in the above-mentioned solution, forms resin/carborundum powder volume than the slip (solutes content is 50%) that is 6/4.The polyamine fat vacuole foam of aperture 2mm cut into require to immerse equably in the described slip after the size, soaked 1 minute, take out the back and squeeze and remove unnecessary slip, air-dry back 50 ℃ of semicures 30 minutes are put into high pressure vessel, charge into nitrogen and make air pressure reach 15MPa, be warming up to 240 ℃, be incubated curing in 1 hour.Pyrolysis under argon shield generates carbon skeleton; Wherein the temperature rise rate per minute is 2 ℃, is warming up to 1000 ℃, is incubated 0.5 hour.After the pyrolysis, carry out the vacuum siliconising (silica flour that adds 4 times of carbon skeleton weight, be placed on the carbon skeleton surface), 1950 ℃ of temperature of reaction, temperature rise rate is 15 ℃/minute, is incubated 1 hour, gets conductive silicon carbide foam ceramic material, room temperature resistivity is: 0.0124 Ω .cm, muscle density are 99%, and the carborundum grain granularity is 5～15 μ m.
Embodiment 6
Weight ratio is respectively 40% and 55% heat-reactive phenolic resin and furfuryl resin and 5% citric acid to be dissolved in the dehydrated alcohol altogether, make slurry solution, the mean particle size that again weight ratio is respectively 93%: 7% is that the carborundum powder of 10 μ m and titanium valve that mean particle size is 8 μ m evenly add in the above-mentioned solution, forms resin/carborundum powder volume than the slip (solutes content is 45%) that is 5/5.The polyamine fat vacuole foam of aperture 3mm cut into require to immerse equably in the described slip after the size, soaked 1 minute, take out the back and squeeze and remove unnecessary slip, air-dry back 50 ℃ of semicures 10 minutes are put into high pressure vessel, charge into nitrogen and make air pressure reach 20MPa, be warming up to 280 ℃, be incubated curing in 1 hour.Pyrolysis under argon shield generates carbon skeleton; Wherein the temperature rise rate per minute is 2 ℃, is warming up to 900 ℃, is incubated 0.5 hour.After the pyrolysis, carry out the vacuum siliconising, the silica flour that adds 5 times of carbon skeleton weight, be placed on the carbon skeleton surface, 1650 ℃ of temperature of reaction, temperature rise rate is 15 ℃/minute, be incubated 1 hour, get conductive silicon carbide foam ceramic material, room temperature resistivity is: 0.0251 Ω .cm, muscle density are 100%, and the carborundum grain granularity is 1.5～8 μ m.
Embodiment 7
Be that with the difference of embodiment 1 metal powder selects 5 μ m nickel powders for use.
Embodiment 8
Be that with the difference of embodiment 2 metal powder selects 10 μ m iron powders for use.
Embodiment 9
Be that with the difference of embodiment 3 metal powder selects 8 μ m molybdenum powders for use.
Be that with the difference of embodiment 4 metal powder selects 15 μ m aluminium powders for use.
Embodiment 11
Be that with the difference of embodiment 5 metal powder selects 3.5 μ m tungsten powders for use.
Embodiment 12
Be that with the difference of embodiment 6 metal powder selects 20 μ m vanadium powders for use.
Embodiment 13
Be that with the difference of embodiment 1 metal powder selects 5 μ m copper powders for use.
Embodiment 14
Be that with the difference of embodiment 3 metal powder selects 1.5 μ m zinc powders for use.
Claims (8)
1. conductive silicon carbide foam ceramic material that resistivity is controlled is characterized in that: percentage ratio meter by weight, its composition is made up of the silicon of 80%～96% silicon carbide, 10%～2% metallographic phase and 10%～2%.
2. according to the controlled conductive silicon carbide foam ceramic material of the described resistivity of claim 1, it is characterized in that: described foam silicon carbide ceramics is an elementary cell with polygonal Closed loop, and each elementary cell is interconnected to form three-dimensional networks; Constitute relative density 〉=99% of the unitary ceramic muscle of Polygons Closed loop, average grain size is at 1.5 μ m-15 μ m.
3. according to the described conductive silicon carbide foam ceramic material of claim 1, it is characterized in that: described metallographic phase is titanium, nickel, iron, tungsten, molybdenum, vanadium, aluminium, copper or zinc.
4. the preparation method of the controlled conductive silicon carbide foam ceramic of the described resistivity of claim 1, it is characterized in that: with carborundum powder, macromolecular material and metal powder is basic raw material, is template with the porous plastics, specific operation process is as follows:
(1) slip preparation
With solute carborundum powder, macromolecular material, metal powder and solidifying agent and etoh solvent 4～5: 5～6 mixed by weight, ball milling after mechanical stirring filters, slip, the solute total amount is 5～60% of a total amount in the slurry solution; The carborundum powder mean particle size is 1.5-15 μ m; Weight percent is 70～20wt%: 20～50wt%: 1～10wt%: 1～20wt% between carborundum powder, macromolecular material, metal powder and the solidifying agent;
(2) soak extension
Polyamine fat vacuole foam is cut into desired shape and size, immerse in the slip equably, take out afterwards to squeeze and go unnecessary slip, employing air-blowing or centrifugal mode to remove unnecessary slip, the heating semicure repeats repeatedly, reach needed volume parts, obtain the foam silicon carbide ceramics presoma; Semicure under 40～100 ℃ of temperature, time 1-2 minute;
(3) hot-pressing densification
Foam silicon carbide ceramics skeleton presoma is put into high pressure vessel, charge into nitrogen or argon gas high temperature, high pressure curing, obtain fine and close foam silicon carbide ceramics carbon skeleton; Pressure be 5-22MPa, temperature at 100-300 ℃, heat-up rate 1-5 ℃, be incubated 10 minutes-2 hours;
(4) pyrolysis
The foam silicon carbide ceramics carbon skeleton of densification is carried out pyrolysis under argon gas or protection of nitrogen gas atmosphere or vacuum condition, generate the foamed ceramics carbon skeleton; Wherein the temperature rise rate per minute is 1～10 ℃, is warming up to 800～1400 ℃, is incubated 0.5～2 hour;
(5) siliconising
Sic foam carbon skeleton reaction sintering with the densification after the pyrolysis; add carbon skeleton weight 2-5 silica flour doubly; be placed on the carbon skeleton surface; reaction sintering carries out under protective atmosphere or vacuum condition; temperature rise rate is 5～15 ℃ of per minutes; temperature is 1500～2200 ℃, is incubated 0.5～2 hour, gets conductive silicon carbide foam ceramic material.
5. according to the preparation method of the described conductive silicon carbide foam ceramic material of claim 4, it is characterized in that: described macromolecular material is selected from one or more of Resins, epoxy, resol and furfuryl resin; Adulterated metal powder is selected from titanium, nickel, iron, tungsten, molybdenum, vanadium, aluminium, copper or zinc.
6. according to the preparation method of the described conductive silicon carbide foam ceramic material of claim 4, it is characterized in that: described ethanol volumetric concentration is 〉=95%, and silica flour purity is 〉=95%.
7. according to the preparation method of the described conductive silicon carbide foam ceramic material of claim 4, it is characterized in that: described solidifying agent is that product, oxalic acid or citric acid are taken off in tosic acid, five Lip rivers.
8. according to the preparation method of the described conductive silicon carbide foam ceramic material of claim 4, it is characterized in that: the temperature rise rate during described pyrolysis is 1～4 ℃ of a per minute.
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