CN1960834A - Osmium diboride compounds and their uses - Google Patents
Osmium diboride compounds and their uses Download PDFInfo
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- CN1960834A CN1960834A CNA2005800179190A CN200580017919A CN1960834A CN 1960834 A CN1960834 A CN 1960834A CN A2005800179190 A CNA2005800179190 A CN A2005800179190A CN 200580017919 A CN200580017919 A CN 200580017919A CN 1960834 A CN1960834 A CN 1960834A
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- rhenium
- polishing
- hardness
- ruthenium
- osmium
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Links
- 229910052762 osmium Inorganic materials 0.000 title claims abstract description 56
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 150000001875 compounds Chemical class 0.000 title claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 60
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 30
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 24
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 229910052742 iron Inorganic materials 0.000 claims abstract description 16
- 239000003082 abrasive agent Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 24
- 238000005498 polishing Methods 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 5
- 230000006872 improvement Effects 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052796 boron Inorganic materials 0.000 abstract description 18
- 239000010432 diamond Substances 0.000 description 18
- 229910003460 diamond Inorganic materials 0.000 description 18
- 239000006104 solid solution Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 229910052723 transition metal Inorganic materials 0.000 description 6
- 150000003624 transition metals Chemical class 0.000 description 6
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000005230 valence electron density Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000005649 metathesis reaction Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- -1 B0=248GPa) Inorganic materials 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 229910001573 adamantine Inorganic materials 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010189 synthetic method Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000011561 Fermi liquid Substances 0.000 description 1
- 229910020073 MgB2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008485 antagonism Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004774 atomic orbital Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L magnesium chloride Substances [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
- B23B27/148—Composition of the cutting inserts
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G55/00—Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26B—HAND-HELD CUTTING TOOLS NOT OTHERWISE PROVIDED FOR
- B26B9/00—Blades for hand knives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
- B26D1/0006—Cutting members therefor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/02—Boron; Borides
- C01B35/04—Metal borides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
- B26D1/0006—Cutting members therefor
- B26D2001/002—Materials or surface treatments therefor, e.g. composite materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Forests & Forestry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Osmium, when combined with boron alone, or in combination with rhenium, ruthenium or iron, produces compounds that are ultra-hard and incompressible. These osmium diboride compounds are useful as a substitute to for other super or ultra-hard materials that are used in cutting tools and as abrasives. The osmium diboride compounds have the formula Os<SUB>X</SUB> M<SUB>1-X </SUB>B<SUB>2</SUB> where M is rhenium, ruthenium or iron and x is from 0.01 to 1, except when x is not 1 and M is rhenium, x is from 0.01 to 0.3.
Description
Background of invention
1. invention field
The incompressible material of relate generally to ultrahard of the present invention.More particularly, the present invention relates to such discovery,, produce superhard and incompressible compound when osmium combines with boron separately or makes up when combining with boron with rhenium, ruthenium or iron.These osmium diboride compounds can be as at present in cutting element and as other ultrahard of abrasive material use or the substitute of superhard material.
2. description of Related Art
Here relate to and describe background of the present invention and provide other publication and other reference to be incorporated into this by reference about its implementation detail.For simplicity, described reference be numeric reference and in accompanying bibliography, indicate.
The ultrahard material of high bulk modulus is owing to their serviceabilities in many commercial Application are paid close attention to greatly.These application comprise abrasive material, cutting element and coating, and wherein anti-wear, scratch-resistant, surface durability and chemical stability are preferential
[1,2]Therefore, the exploitation of the ultrahard material of new kind obtains great actual concern.The general viewpoint of researching and proposing in past is, fusing point can be relevant with hardness, and carbon, nitrogen or boron are joined transition metal usually can form hard material
[3]
Hardness is the measuring of the anti-plastic indentation of material under the load that applies.Distortion of materials presents by detrusion, volume compression, bond bending and dislocation
[4]High shear modulus has reflected that material is through deformation ability in any direction by compression and not.This relate to described material the antagonism volume compression ability and be reflected in the high bulk modulus
[5,6]Therefore, design object is the material that discovery has high bulk modulus
[7-9]
The compressibility of multiple material can with their Valence Electron Density, electronics/
3, directly related
[10]For example, the hardest known material diamond has 0.705 electronics/
3Valence Electron Density and extra high bulk modulus (B
0=442GPa)
[11]Therefore in seeking new high bulk modulus material, making the Valence Electron Density maximization is the design parameter of potentially useful.For simple metal, the osmium metal has one of highest price electron density (0.511 electronics/
3), and the nearest mensuration of its bulk modulus has provided the value in the 411-462GPa scope
[12,13]Though in fact a kind of mensuration propose the osmium metal is more incompressible than diamond, two experiments agree that all it is the height incompressible material.Although the bulk modulus of diamond and osmium is very approaching, because the difference of their dislocation migration rate, their firmness change is very big
[5]Diamond has 8000-10,000kg/mm
2Hardness, and the osmium metal only has 400kg/mm
2Hardness
[14,15]Described deviation can simplicity of explanation be: osmium is a metal, and diamond is complete covalency.Atomic orbital in the diamond all is sp
3Hydridization, and overlapping and greatly forming key short, directed, the height covalency in the tetrahedral network.The intensity of described key and directionality have determined the non-deformability of material
[4,8]On the contrary, the closelypacked crystal structure of the hexagon of osmium has and does not participate in locating or the fermi liquid of the valence electron of directed combination, and therefore few dislocation motion resistance is provided.
Although many transition metal are soft at their pure element state, by for example boron, carbon or nitrogen combine and they can be transformed into hard material with a spot of covalency major element with them.For example, consider the third line transition metal tungsten.Form wolfram diboride, WB by adding boron
2, the hardness of tungsten is from 900kg/mm
2Bring up to 1400kg/mm
2Alternatively, tungsten can combine with carbon and form tungsten carbide, WC, and it brings up to 3000kg/mm with hardness
2 [14]
Summary of the invention
According to the present invention, the applicant has proved that Valence Electron Density and key covalency can be used as the specific design parameter of super incompressible ultrahard material.Utilize these notions (concepst), the applicant is attached to the boron atom in the osmium metal and produces the covalent bond of location and therefore improve its hardness.Other possible compound comprises the carbide and the nitride of osmium.Yet the trial of synthetic OsC is unsuccessful, and does not only also obtain the OsN of the pure form of crystallization observing OsN with spectroscopic methodology recently
[16]Because the small size of boron and electronics are accepted character, the applicant can combine boron and form OsB with osmium
2, it has almost kept the whole high Valence Electron Density of osmium metal.This compound combines high bulk modulus with high rigidity.Although the crystal structure of osmium diboride is known, also fully do not characterize its engineering properties
[17,18]
The present invention includes polishing or cut the method for wearing material surface, this method comprises: the abrasive material that usefulness is made up of the osmium diboride compounds with following molecular formula basically contacts the surface of described material,
OS
xM
1-xB
2
Wherein M is that rhenium, ruthenium or iron and x are 0.01 to 1, except when x is not 1 and M when being rhenium, x is 0.01 to 0.3.The material that can be polished is those hard materials of osmium diboride compounds as described not.For example, (hardness is 2000kg/mm to sapphire
2) can be polished, depend on that hardness is 3000kg/mm as the hardness of the special osmium diboride compounds of abrasive material
2Or bigger material also can be polished.
The present invention also comprises with the material protection surface in order to avoid the method for wearing and tearing or cutting.Described method relates to usefulness and comprises that the protective layer of the osmium diboride compounds with following molecular formula applies described surface,
Os
xM
1-xB
2
Wherein M is that rhenium, ruthenium or iron and x are 0.01 to 1, except when x is not 1 and M when being rhenium, x is 0.01 to 0.3.Described protective layer will be to providing protection not as the hard material of above-mentioned osmium diboride compounds.
The present invention not only comprises the method for using osmium diboride compounds, and comprises instrument, abrasive material and other device and the system that uses osmium diboride compounds.Osmium diboride compounds can use as the known ultrahard material mode that for example diamond, tungsten carbide etc. are identical.Osmium diboride compounds is provided at same suitable ultrahard or the superhard character of finding in the known ultrahard material, and does not have so much shortcoming.
Detailed description according to below in conjunction with accompanying drawing the time, above-mentioned and many further features of the present invention and bonus will become better understood.
The accompanying drawing summary
Figure 1A is OsB
2The unit cell volume of fractional representation to the curve map of pressure.Symbol ■ with ▲ expression two kinds of different experimentations.These data are with the match of three Birch-Murnaghan state equations:
P=(3/2)B
o[(V/V
o)
-7/3-(V/V
o)
-5/3]{1-(3/4)(4-B
o′)[(V/V
o)
-2/3-1]}
Figure 1B is expression OsB
2Compressibility curve map relatively with adamantine independent lattice parameter.OsB
2In a (square), b (circle) and c (triangle) parameter fitting be straight line, and diamond wire (runic) is available from list of references 11.Note OsB
2In the c-axle be more incompressible than diamond.
Detailed Description Of The Invention
The applicant adopts two kinds to form OsB2Synthetic method. In first method, use MgB2As the precursor in the solid-state metathesis reactions[19] OsCl with heat-resisting nichrome wire startup3∶MgB
22: 3 mixtures the reaction automatic spread and within less than a second, finish. At flush away MgCl2After the by-product salt, X-ray diffraction shows together with Os2B
3, OsB and Os formed OsB2 Boron with 3 molar excess heats this product 3 days at 1000 ℃, produces the OsB as unique crystalline product2 In the second approach, at the Os of 1: 2 mol ratio of 1000 ℃ of heating: B produces the mixture of osmium boride. Yet, as proposing with the experiment of metathesis reaction from the applicant, utilize the Os of 1: 5 mol ratio: B, and 1000 ℃ of heating 3 days, produce the pure crystallization OsB of phase place2And amorphous boron. Then this material is used for measuring bulk modulus and hardness.
Utilize the high pressure X-ray diffraction to measure OsB2Compressibility. To the scope of 32GPa, collect diffraction pattern at 0.0001GPa (environmental pressure). The applying of high pressure produced remarkable little peak position and moved, and shows little bulk compressility, that is, and and large volume modulus (B). Utilize the described data of three Birch-Marnaghan state equations match and calculate simultaneously zero pressure bulk modulus B0And to the derivative B of pressure0' (Fig. 2 A)[11,20] The numerical value that obtains is B0=395GPa and B0'=1.4. The numerical value of 395GPa is unusual high, surpasses other ultrahard material, comprises boron carbide (B4C,B
0=200GPa), carborundum (SiC, B0=248GPa), sapphire (Al2O
3,B
0=252GPa) and cubic boron nitride (c-BN, B0=367GPa), and near diamond (B0=442GPa)
[21] Typical hard material has the B near 40′
[11] This means most of materials under high pressure become more incompressible so at P to V/V0Data in show crooked. As to OsB2That calculate and to diamond (B0'=1.9) the little B that observes0', although mean raising pressure, described state equation also keeps highly linear[11]。
As OsB2Unit cell volume the same, independent axle also improves and linear change along with pressure. Yet because described structure cell is not three-dimensional, the compression of axle has shown interesting anisotropy (Figure 1B). The b-direction of crystal is the most compressible, and the c-direction is least compressible. Significantly, OsB2Along the compressibility of c-axle (001) even less than the similar linear compressibility of diamond.
Pass through OsB2The analysis of orthorhombic body structure be appreciated that this compressible variation in described axle. On a-and b-direction, boron and osmium atom are arranged in the plane of mutual skew. During compression, boron and osmium atom directly do not promote mutually, therefore the maximized electronics repulsion of Incoercibility are not optimised. On the contrary, along the c-direction, boron and osmium atom almost are directly to arrange, and cause the electron interaction of high rejection. This result means the boride of higher symmetry, and wherein boron more is evenly distributed in whole lattices, can show larger isotropism and potential higher Incoercibility.
Carry out in two ways OsB2Hardness characterize: qualitatively scratch test and nano indentation test. The Mohs' hardness scale is with the relative hardness of the material ability rating level according to the another kind of material of its scratch, and scale is 1-10. With osmium diboride and Mohs' scale (diamond is 10) be 9 sapphire relatively. OsB2The sapphire window of easily scratch of the sample of powder polishing. Described permanent vestige both can with the naked eye also can arrive with observation by light microscope.
This measurement provides the sensation of relative hardness. Yet sapphire hardness is 2000kg/mm2And adamantine hardness is 8000-10,000kg/mm2
[15] Between these numerical value and therefore the Mohs' hardness scale 9 and 10 between have significant difference. For obtaining more accurate OsB2Hardness number, it is necessary carrying out more direct, quantitative measurement.
Thereby to OsB2Carry out nanoindentation. In order to do these experiments with applicant's powder sample, at first with OsB2Be embedded in the hard epoxy support matrix. Then utilize the diamond polisher that described surface finish is represented OsB2Smooth crystal face. The pressure head of the diamond edge point of nanosized drops on the sample with known force, and collects about applying the data of load and depth of cup during load and unloading. Then measure hardness according to the unloading degree of depth of pressure head. Unloading curve can separate sample plastic deformation and sample strain. Unfortunately, because also plastic deformation in Indentation Process of epoxy resin, so unloading curve not exclusively represents described OsB2The distortion of sample. Therefore, measure the lower limit that the hardness number that obtains represents described material true hardness from this. From this experiment, obtained Vicker-hardness Hv=3100kg/mm
2 This has proved conclusively the data that obtain from scratch test, wherein OsB2It is 2000kg/mm that scratch has Vicker-hardness2Sapphire[16]。
OsB
2Measured Incoercibility and hardness proof can be used for design parameter the synthetic of highly incompressible and ultrahard material. By little, light, major element are combined with transition metal large, electron rich, can add covalency in the high electron density keeping very. As osmium, rhenium also has high electron density, and preliminary experiment shows ReB2Also has high bulk modulus. Because known when two kinds of different phases are mixed hardness can increase, so with the solid solution of Os and Re, i.e. Os1-xRe
xB
2, can surpass OsB2Perhaps ReB2Bulk modulus and hardness. Provide and follow the possible atomic substitutions of the concept that proposes here, probably other is in conjunction with comparing OsB2Generation has the osmium diboride compounds of the engineering properties of making us admiring more.
For example, has molecular formula OsxRe
1-xB
2The solid solution of (wherein x is in 0.01 to 0.30 scope) is possible. Utilize known method to make these solid solution, wherein an amount of various compositions are mixed and are heated to the temperature less than 2500 ℃. Solid solution also can have molecular formula OsxRu
1-xB
2, wherein x is in 0.01 to 0.99 scope. Utilizing same base this method of making solid solution as known in the art to make these utilizes Ru to replace the superhard material of Re. Described synthetic method typically relates to utilizes electric arc heated.
Utilize the arc-melting device can synthesize transition metal diboride solid solution, comprise (Os, Ru) B
2, (Os, Fe) B
2, (Fe, Ru) B
2(Os, Re) B
2In the arc-melting device,, can easily in seconds obtain far to surpass the temperature (>2500 ℃) of their fusing points by under high potential (30 volts), the sample that comprises transition metal and boron precursor being applied relative big electric current (80-120 ampere).Be cooled fast to environment temperature subsequently and produce true solid solution.For example, the diboride solid solution between osmium and the ruthenium, i.e. (Os, Ru) B
2, can grind them with pestle among the Zai Yan Portland by in conjunction with stoichiometric every kind of element, utilize pelleting press to be pressed into ball in this powder then and make.After being carried in described ball in the arc-melting device, described device is vacuumized, then with inert gas for example argon gas inflate again.Apply electric current and produce electric arc via electrode.Increase electric current up to described ball fusion, this generally only needs several seconds.In case close current, described ball water-cooled copper sheet placed on it makes sample get back to environment temperature apace.FR (Os, Ru) B have been made
2Solid solution.Similarly, can be made into (Os, Fe) B
2(Fe, Ru) B
2Solid solution.For Os/Re boride system, the applicant can be attached to ReB with the Os up to 30 moles of %
2In, i.e. Os
0.3Re
0.7B
2But, applicant even the Re of 10 moles of % can not be attached to described OsB
2In the structure.This is most likely because OsB
2(quadrature) and ReB
2The crystal structure that (hexagonal) is different.Yet because Os and Ru have similar structure, they basically can be with the arbitrary proportion combination, for example 50/50 Os/Ru mixture, i.e. Os
0.5Ru
0.5B
2Experiment shows that iron can be incorporated into OsB
2And RuB
2Among the two, though pure FeB
2Be unknown.
Above-mentioned several groups of compounds, it comprises osmium or boron by oneself, perhaps with ruthenium, rhenium or iron combination, is called osmium diboride compounds here.These compounds have molecular formula:
Os
xM
1-xB
2
Wherein M is that rhenium, ruthenium or iron and x are 0.01 to 1, except when x is not 1 and M when being rhenium, x is 0.01 to 0.3.If desired, iridium, rhodium or cobalt can partly replace Os.For within the scope of the present invention, described diboride compound must have the hardness that is equal to or greater than osmium diboride.That is, described hardness should be equivalent to 3000Kg/mm
2Or it is bigger.
Embodiment is as follows: cause with the thermochrome silk and adopt OsCl
3: MgB
2The metathesis reaction of 2: 3 molar mixtures
[19]Described reaction (equation 1) is finished in less than a second.
At flush away MgCl
2Behind the accessory substance, X-ray diffraction shows together with Os
2B
3, OsB and Os formed OsB
2Boron with 3 molar excess in the enclosed vacuum quartz ampoule obtained OsB at 1000 ℃ in 3 days with this product heating
2The Os of 1: 2 in the second approach, mol ratio: B obtains the mixture of osmium boride 1000 ℃ of heating in the enclosed vacuum quartz ampoule.Yet, the OsB that utilizes the Os of 1: 5 mol ratio: B and obtained as unique crystalline phase in 3 days 1000 ℃ of heating
2, given as equation 2.
OsB
2Also can form by the high-temperature electric arc fusing
[17]
Utilize X-ray diffraction to study OsB
2Compressibility.At Advanced Light Source, utilize figure phase-plate collection angle to disperse the powder diffraction pattern on the light beam line 7.3.3 of Lawrence Berkeley National Laboratories.The X-beam wavelength of selecting 1.15 dusts is to avoid the L of osmium
3The ABSORPTION EDGE edge.Utilize ethyl cyclohexane to be used to measure described pressure as the static pressure medium and with ruby fluorescence
[22]
Utilizing Micro Photonics Inc.Nano Hardness Tester to carry out nano impress measures.With OsB
2Particle is embedded in the resin (Omegabond 200) of relative hard.Utilize the diamond polishing machine with the surface finish of this sample and expose OsB then
2Plane of crystal.With known controlled force the diamond penetrator tip of nanometer size is dropped to independent OsB
2On the crystal.Apply and discharge load during monitor depth of cup.Can distinguish the elasticity and the plastic deformation of material to the analysis of the load that obtains and unloading curve.
Osmium diboride compounds can be as the identical mode of other ultrahard material as the face coat of protective surface coating, cutting or polissoir or as abrasive material.Once preparation, described osmium diboride compounds is attached on the described tool surfaces with suitable bonding combination or alternate manner according to applying the known technology of ultrahard material to the surface.When described osmium diboride compounds was used as abrasive powders, the big I of crystal changed according to the polishing method of the employing ultrahard compound of knowing.Generally speaking, osmium diboride compounds can replace diamond, tungsten carbide or other ultrahard material, is used to relate to those applications of cutting, polishing (polishing) and protection.
So described exemplary embodiment of the present invention, those of skill in the art should be noted that described disclosure only is exemplary, can carry out various other replacement, improvement and modifications within the scope of the invention.
Bibliography
1.V.L.Solozhenko,D.Andrault,G.Fiquet,M.Mezouar,D.C.Rubie,AppliedPhysics Letters 78,1385-1387(2001).
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10.C.Li,P.Wu,Chemistry of Materials 13,4642-4648(2001).
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12.H.Cynn,J.E.Klepeis,C.-S.Yoo,D.A.Young,Physical Review Letters 88,135701/1-135701/4(2002).
13.F.A.Occelli,C.M.;Hanfland,M.;Canny,B.;Couzinet,B.;Teter,D.M.;Badro,J.;Farber,D.L.,Physical Review Letters(in press).
14.J.F.A.Shackleford,W.,CRC Handbook of Materials Science & Engineering(Boca Raton:CRC Press,2001).
15.R.Riedel,Editor,Handbook of Ceramic Hard Materials(2000).
16.R.S.Ram,J.Lievin,P.F.Bernath,Journal of Chemical Physics 111,3449-3456(1999).
17.B.Aronsson,Acta Chem.Scand 17,2036-50(1963).
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Claims (26)
1. the method on a polishing material surface, described method comprise the step that the surface with described material contacts with abrasive material, and described abrasive material is made up of the osmium diboride compounds with following molecular formula basically,
Os
xM
1-xB
2
Wherein M is that rhenium, ruthenium or iron and x are 0.01 to 1, except when x is not 1 and M when being rhenium, x is 0.01 to 0.3.
2. according to the method on the polishing material surface of claim 1, wherein x is 1.
3. according to the method on the polishing material surface of claim 1, wherein M is a ruthenium.
4. according to the method on the polishing material surface of claim 1, wherein M is a rhenium.
5. according to the method on the polishing material surface of claim 1, wherein said material has 2000Kg/mm
2Or bigger Vicker-hardness.
6. according to the method on the polishing material surface of claim 1, wherein said material has 3000Kg/mm
2Or bigger Vicker-hardness.
One kind with material protection surface in order to avoid the method for polishing or cutting, described method comprises the step that applies described surface with the protective layer that comprises the osmium diboride compounds with following molecular formula,
Os
xM
1-xB
2
Wherein M is that rhenium, ruthenium or iron and x are 0.01 to 1, except when x is not 1 and M when being rhenium, x is 0.01 to 0.3.
According to the protection of claim 7 surface in order to avoid the method for polishing or cutting, wherein x is 1.
According to the protection of claim 7 surface in order to avoid the method for polishing or cutting, wherein M is a ruthenium.
According to the protection of claim 7 surface in order to avoid the method for polishing or cutting, wherein M is a rhenium.
11. in order to avoid the method for polishing or cutting, wherein said material has 2000Kg/mm according to the protection of claim 7 surface
2Or bigger Vicker-hardness.
12. in order to avoid the method for polishing or cutting, wherein said material has 3000Kg/mm according to the protection of claim 7 surface
2Or bigger Vicker-hardness.
13. wear material or polish the instrument that uses in the described material surface cutting for one kind, described instrument comprises the tool surfaces of the osmium diboride compounds that contains following molecular formula,
Os
xM
1-xB
2
Wherein M is that rhenium, ruthenium or iron and x are 0.01 to 1, except when x is not 1 and M when being rhenium, x is 0.01 to 0.3.
14. according to the instrument of claim 13, wherein x is 1.
15. according to the instrument of claim 13, wherein M is a ruthenium.
16. according to the instrument of claim 13, wherein M is a rhenium.
17. according to the instrument of claim 13, wherein said material has 2000Kg/mm
2Or bigger Vicker-hardness.
18. according to the instrument of claim 13, wherein said material has 3000Kg/mm
2Or bigger Vicker-hardness.
19. in the cutting element with the tool surfaces that contains the ultrahard compound, described improvement comprises with the alternative described ultrahard compound of the osmium diboride compounds with following molecular formula,
Os
xM
1-xB
2
Wherein M is that rhenium, ruthenium or iron and x are 0.01 to 1, except when x is not 1 and M when being rhenium, x is 0.01 to 0.3.
20. one kind comprises with the described surface of material protection in order to avoid the surface of protective finish of polishing or cutting, described protective finish comprises the osmium diboride compounds with following molecular formula,
Os
xM
1-xB
2
Wherein M is that rhenium, ruthenium or iron and x are 0.01 to 1, except when x is not 1 and M when being rhenium, x is 0.01 to 0.3.
21. according to the surface of claim 20, wherein x is 1.
22. according to the surface of claim 20, wherein M is a ruthenium.
23. according to the surface of claim 20, wherein M is a rhenium.
24. according to the surface of claim 20, wherein said material has 2000Kg/mm
2Or bigger Vicker-hardness.
25. according to the surface of claim 20, wherein said material has 3000Kg/mm
2Or bigger Vicker-hardness.
26. comprising with material protection surface that in order to avoid in the described surface of the protective finish of polishing or cutting, described protective finish comprises the ultrahard compound wherein said improvement comprises with the osmium diboride compounds with following molecular formula and substitutes described ultrahard compound,
Os
xM
1-xB
2
Wherein M is that rhenium, ruthenium or iron and x are 0.01 to 1, except when x is not 1 and M when being rhenium, x is 0.01 to 0.3.
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PCT/US2005/016372 WO2005110924A2 (en) | 2004-05-11 | 2005-05-10 | Osmium diboride compounds and their uses |
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Cited By (5)
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CN107043260A (en) * | 2016-12-07 | 2017-08-15 | 广东工业大学 | A kind of novel tertiary osmium rhenium diboride (Os1 xRexB2) hard material and preparation method thereof |
CN107140987A (en) * | 2017-03-31 | 2017-09-08 | 广东工业大学 | A kind of Os2B3Hard material and its preparation and application |
CN108165862A (en) * | 2017-12-11 | 2018-06-15 | 昆明理工大学 | A kind of preparation method of boronation ruthenium superhard alloy |
CN109437915A (en) * | 2018-11-19 | 2019-03-08 | 广东工业大学 | A kind of transition metal boride hard ceramic material and its preparation method and application |
CN109534824A (en) * | 2018-12-27 | 2019-03-29 | 广东工业大学 | A kind of transition metal boride hard material and preparation method thereof |
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US8431102B2 (en) * | 2008-04-16 | 2013-04-30 | The Regents Of The University Of California | Rhenium boride compounds and uses thereof |
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JPH06102539B2 (en) * | 1989-12-25 | 1994-12-14 | 東洋鋼鈑株式会社 | Method for producing Mo-lower 2 FeB-lower 2 type complex boride powder |
JPH0780302A (en) * | 1993-05-13 | 1995-03-28 | Tosoh Corp | Nox removing catalyst consisting of transition metal boride |
DE69530780T2 (en) | 1994-09-30 | 2004-03-18 | Minnesota Mining And Mfg. Co., St. Paul | COATED ABRASIVE OBJECT AND METHOD FOR THE PRODUCTION THEREOF |
US5603075A (en) * | 1995-03-03 | 1997-02-11 | Kennametal Inc. | Corrosion resistant cermet wear parts |
US5708956A (en) * | 1995-10-02 | 1998-01-13 | The Dow Chemical Company | Single step synthesis and densification of ceramic-ceramic and ceramic-metal composite materials |
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Cited By (5)
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CN107043260A (en) * | 2016-12-07 | 2017-08-15 | 广东工业大学 | A kind of novel tertiary osmium rhenium diboride (Os1 xRexB2) hard material and preparation method thereof |
CN107140987A (en) * | 2017-03-31 | 2017-09-08 | 广东工业大学 | A kind of Os2B3Hard material and its preparation and application |
CN108165862A (en) * | 2017-12-11 | 2018-06-15 | 昆明理工大学 | A kind of preparation method of boronation ruthenium superhard alloy |
CN109437915A (en) * | 2018-11-19 | 2019-03-08 | 广东工业大学 | A kind of transition metal boride hard ceramic material and its preparation method and application |
CN109534824A (en) * | 2018-12-27 | 2019-03-29 | 广东工业大学 | A kind of transition metal boride hard material and preparation method thereof |
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